一种双控制栅半浮栅晶体管及其制备方法
By using a dual-controlled gate structure and combining high-k dielectric material and metal gate, the problems of quantum tunneling effect and weak electric field control in semi-floating gate devices during floating gate charging are solved, achieving better electric field control and power consumption optimization.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHANGHAI HUALI INTEGRATED CIRCUIT CORP
- Filing Date
- 2021-01-28
- Publication Date
- 2026-07-17
AI Technical Summary
In the prior art, semi-floating gate devices suffer from a large quantum tunneling effect in the gate dielectric layer during floating gate charging and a weak electric field control during gate readout.
A dual-control gate structure is adopted, including a floating gate stack, a polysilicon control gate stack, and a metal control gate stack. High-k dielectric material and metal gate are used to reduce quantum tunneling effect, and better electric field control is achieved through the independent operation of polysilicon control gate and metal control gate.
It effectively reduces the quantum tunneling effect of the gate dielectric layer during floating gate charging, improves gate leakage current and the power consumption it causes, and realizes electric field control of the device during reading and writing, achieving the function of simultaneous reading and writing.
Smart Images
Figure CN114823901B_ABST