Light emitting display device

Abstract

According to an embodiment, a light emitting display device includes a display panel including a display area, the display area of the display panel including a transparent display area, an intermediate display area located at one side or both sides of the transparent display area along a first direction and including a transparent display area pixel circuit portion, and a general display area, the transparent display area including a first anode, and a transfer transistor transferring a light emitting current output from the transparent display area pixel circuit portion to the first anode.

Description

Technical Field

[0001] This disclosure relates to a light-emitting display device, and more specifically to a light-emitting display device in which an optical device such as a camera is disposed on the back of the display area. Background Technology

[0002] Display devices, which are devices for displaying images, include liquid crystal displays (LCDs) and organic light-emitting diodes (OLEDs). These display devices are used in various electronic devices such as mobile phones, navigation systems, digital cameras, e-readers, portable game consoles, and various other terminals.

[0003] Especially in small electronic devices such as mobile phones, optical devices such as cameras or optical sensors are formed around the periphery of the display area, i.e., the bezel area. However, a technology has been developed that allows the size of the displayed image to be increased while the size of the peripheral area of ​​the display area to be gradually reduced, while enabling the camera or optical sensor to be located on the back of the display area. Summary of the Invention

[0004] The embodiment provides a light-emitting display device that can display images in a display area in front of the optical device even when the optical device, such as a camera or optical sensor, is located behind the display area, and the resolution of the image displayed in front of the optical device is also high.

[0005] The light-emitting display device according to an embodiment includes: a display panel including a display area, the display area of ​​the display panel including: a transparent display area; an intermediate display area located on one or both sides of the transparent display area along a first direction and including a pixel circuit section for the transparent display area; and a general display area, the transparent display area including: a first anode; and a transmission transistor for transmitting light-emitting current output from the pixel circuit section for the transparent display area to the first anode.

[0006] Alternatively, the wiring connecting the transmission transistor in the pixel circuit section of the transparent display area may be a first transparent connection wiring containing a transparent conductive material.

[0007] It can be that a first transparent connection wiring connects a plurality of the pixel circuit sections of the transparent display areas and a plurality of the transmission transistors.

[0008] The first transparent connection wiring may include a first part, a second part, and a connection part connecting the first part and the second part. The first part is located in the intermediate display area and is connected to a plurality of transparent display areas by pixel circuitry. The second part is located in the transparent display area and is connected to a plurality of transmission transistors.

[0009] Alternatively, the connecting portion may extend in a first direction to connect the first portion and the second portion, and the first portion and the second portion may extend in a second direction perpendicular to the first direction.

[0010] Alternatively, the first part, the second part, and the connecting part may be integrally formed from the same transparent conductive material.

[0011] Alternatively, the intermediate display area may further include: a pixel circuit section for the intermediate display area; and an anode that receives the light-emitting current from the pixel circuit section for the intermediate display area and is located in the intermediate display area.

[0012] It is possible that the pixel circuit section for the transparent display area and the pixel circuit section for the intermediate display area have the same structure.

[0013] The pixel circuit section of the intermediate display area may include: a driving transistor; and an output control transistor, which receives and outputs the light-emitting current of the driving transistor, wherein the gate electrode of the output control transistor is connected to the light-emitting control line.

[0014] Alternatively, the gate electrode of the transmission transistor may be connected to the light-emitting control line.

[0015] The general display area may include: a pixel circuit section for a general display area; and an anode that receives the light-emitting current from the pixel circuit section for the general display area and is located in the intermediate display area.

[0016] The pixel circuit section of the general display area may include: a driving transistor; and an output control transistor, which receives and outputs the light-emitting current of the driving transistor, wherein the gate electrode of the output control transistor is connected to the light-emitting control line.

[0017] Alternatively, the gate electrode of the transmission transistor may be connected to the light-emitting control line.

[0018] Alternatively, the transparent display area may further include a second anode, which bypasses the transmission transistor and directly receives the luminous current from the pixel circuit section of the transparent display area.

[0019] Alternatively, the second anode and the transparent display area can be connected by a pixel circuit section via a second transparent connection wiring containing a transparent conductive material.

[0020] Alternatively, the first transparent connection wiring may be formed closer to the substrate than the second transparent connection wiring.

[0021] The second display area, which includes the transparent display area and the intermediate display area, may further include a replica anode electrically connected to the first anode or the second anode.

[0022] Alternatively, the first anode or the second anode may be connected to the replicated anode via a third transparent connection wiring comprising a transparent conductive material, the third transparent connection wiring being formed to be farther away from the substrate than the first transparent connection wiring and the second transparent connection wiring.

[0023] It is possible that the first transparent connection wiring is formed during the process of manufacturing transistors including the pixel circuit section in the transparent display area or before the next process after manufacturing the transistors.

[0024] Alternatively, the light-emitting display device may further include an optical element located on the back of the display panel, and the transparent display area overlaps with the optical element on a plane.

[0025] According to an embodiment, in the display area of ​​the light-emitting display device, multiple light-emitting elements and multiple transmission transistors (eighth transistors) are formed in the area on the back where optical devices such as cameras or optical sensors are disposed. The multiple transmission transistors are connected via a transparent connection wiring, thereby enabling the display of high-resolution images even in front of the optical devices. Furthermore, by connecting the multiple light-emitting elements via a transparent connection wiring using multiple transmission transistors, the PPI (Pixels Per Inch) value of the light-emitting elements located in front of the optical devices is also high. As a result, the image displayed by the light-emitting display device according to this embodiment can be displayed at high resolution in front of the optical devices, thereby improving display quality. Attached Figure Description

[0026] Figure 1 This is a plan view showing an enlarged portion of a light-emitting display device according to one embodiment.

[0027] Figure 2 This is a magnified and simplified diagram showing the first display area and the second display area in a light-emitting display device according to one embodiment.

[0028] Figure 3 This is a configuration diagram showing a portion of the constituent elements in the second display area of ​​a light-emitting display device according to an embodiment.

[0029] Figure 4 This is a diagram showing the manufacturing steps of the eighth transistor and the surrounding structure of the second-2 display area in a light-emitting display device according to an embodiment.

[0030] Figure 5 as well as Figure 6 It is a circuit diagram including a pixel in a light-emitting display device according to an embodiment.

[0031] Figure 7 This is a pixel configuration diagram according to one embodiment.

[0032] Figure 8 It is along Figure 7 A cross-sectional view of line VII-VII.

[0033] Figure 9 This is a cross-sectional view of the sixth and eighth transistors in the second display area of ​​a light-emitting display device according to an embodiment.

[0034] Figure 10 This is a diagram showing the configuration of a second display area in a light-emitting display device according to one embodiment.

[0035] Figure 11 This is a cross-sectional view showing the layered structure of the first display area and the second display area in a light-emitting display device according to an embodiment.

[0036] Figure 12 This is a diagram showing the configuration of a second display area in a light-emitting display device according to one embodiment.

[0037] Figure 13 This is a cross-sectional view showing the layered structure of the first display area and the second display area in a light-emitting display device according to an embodiment.

[0038] Figure 14 The figure illustrates the manufacturing steps of a light-emitting display device according to one embodiment and variations thereof.

[0039] Figure 15 This is a magnified and simplified diagram showing the first display area and the second display area in a light-emitting display device according to one embodiment.

[0040] Figure 16 This is an exploded perspective view of a light-emitting display device according to an embodiment.

[0041] Figure 17 This is a simplified cross-sectional view of a light-emitting display device according to one embodiment.

[0042] (Explanation of reference numerals in the attached diagram)

[0043] DA1: First display area; DA2: Second display area

[0044] DA2-1: Display area 2-1, middle display area

[0045] DA2-2: Display area 2-2, transparent display area

[0046] TCL1, TCL2, TCL3: Transparent interconnect wiring; T8: Transmission transistor

[0047] T6: Sixth transistor, output control transistor

[0048] 155: Gate electrode, light-emitting control line; ACL: Anode connection component.

[0049] Anode, Ada2-2, Arda1, Agda1, Abda1, Arda2-1, Agda2-1, Abda2-1, Arda2-2, Agda2-2, Abda2-2: Anode

[0050] Arda2-1c, Agda2-1c, Abda2-1c, Arda2-2c, Agda2-2c, Abda2-2c: Replicated Anode

[0051] Prda1, Pgda1, Pbda1, Prda2-1, Prda2-2, Pgda2-1, Pgda2-2, Pbda2-1, Pbda2-2: Pixel circuit section

[0052] 110: Substrate; 111: Buffer layer

[0053] 141, 142, 143: Gate insulating film; 161, 162: Interlayer insulating film

[0054] 163, 164, 180, 181: Organic film ACT: First semiconductor layer

[0055] ACT2: Oxide semiconductor layer; GAT1, GAT2, GAT3: Gate conductive layer

[0056] SD1, SD2: Data Conductive Layer Detailed Implementation

[0057] Hereinafter, with reference to the accompanying drawings, several embodiments of the present invention will be described in detail to enable those skilled in the art to readily implement the invention. The present invention can be implemented in various different forms and is not limited to the embodiments described herein.

[0058] To clearly illustrate the present invention, parts unrelated to the description have been omitted. Throughout the entire specification, the same reference numerals are used to mark the same or similar constituent elements.

[0059] Furthermore, for ease of explanation, the dimensions and thicknesses of the structures shown in the accompanying drawings are arbitrarily illustrated; therefore, the invention is not necessarily limited to the illustrations. In the drawings, the thicknesses are enlarged to clearly show multiple layers and regions. Moreover, in the drawings, the thicknesses of some layers and regions are exaggerated for ease of explanation.

[0060] Furthermore, when it is said that a layer, membrane, region, plate, or other part is "above" or "on" another part, it includes not only the case where it is "directly above" another part, but also the case where there is another part in between. Conversely, when it is said that a part is "directly above" another part, it means that there is no other part in between. In addition, being "above" or "on" the part that serves as a reference means being above or below the part that serves as a reference, and does not mean that it must be "above" or "on" the side opposite to the direction of gravity.

[0061] Furthermore, when it is stated throughout the specification that a certain part "includes" a certain constituent element, unless otherwise stated, it does not exclude other constituent elements, but means that other constituent elements may also be included.

[0062] Additionally, throughout the instruction manual, when it says "on a plane," it means when viewing the object from above; when it says "on a cross section," it means when viewing the object from the side as a vertical section.

[0063] First, the following, through Figure 1 The display area of ​​the light-emitting display device according to one embodiment is divided, and the position of optical devices such as cameras or optical sensors is observed.

[0064] Figure 1 This is a plan view showing an enlarged portion of a light-emitting display device according to one embodiment.

[0065] exist Figure 1 The image shows a portion of a display panel DP in a display device according to an embodiment, illustrated using a mobile phone display panel.

[0066] The display panel DP has a display area DA set on the front. The display area DA is mainly divided into a first display area DA1 and a second display area DA2.

[0067] The first display area DA1 has multiple light-emitting elements and multiple pixel circuit sections that generate light-emitting current and transmit it to each of the multiple light-emitting elements. Here, a light-emitting element and a pixel circuit section are referred to as a pixel. In the first display area DA1, a pixel circuit section and a light-emitting element are formed one-to-one. The first display area DA1 is also referred to below as the "general display area".

[0068] Despite Figure 1 The structure of the display panel DP below the cutting line is not shown, but the first display area DA1 can be set below the cutting line.

[0069] Optical devices such as cameras or optical sensors are mounted on the back of the display panel (DP). Figure 1 The optical device OS is located on the back and is shown in dashed lines.

[0070] A second display area DA2 is provided in front of and around the optical device OS. The second display area DA2 is divided into a second-1 display area DA2-1 and a second-2 display area DA2-2.

[0071] The second-2 display area DA2-2 is a display area located in front of the optical device OS. It has multiple light-emitting elements, but no pixel circuitry for generating and transmitting light-emitting current to the light-emitting elements. On the other hand, according to one embodiment, the second-2 display area DA2-2 also additionally has a transmission transistor (hereinafter also referred to as the eighth transistor) and transparent connection wiring. The area of ​​the second-2 display area DA2-2, excluding the area where the multiple light-emitting elements or the transmission transistor (eighth transistor) are located, can be formed transparently, allowing the optical device OS to operate through the transparent area, thereby enabling a camera or optical sensor to capture or sense objects located in front of the display panel DP. Figure 1 In the diagram, the second-2 display area DA2-2 is shown as a quadrilateral. However, the second-2 display area DA2-2 may also have a planar shape corresponding to the optical device OS, such as a circle, depending on the embodiment. Hereinafter, the second-2 display area DA2-2 will also be referred to as a "transparent display area".

[0072] The second-first display area DA2-1 is located on one or both sides of the second-second display area DA2-2, and is situated between the first display area DA1 and the second-second display area DA2-2. The second-first display area DA2-1 not only has one pixel circuit section and one light-emitting element formed in a one-to-one configuration, but also additionally includes a pixel circuit section for transmitting light-emitting current to the plurality of light-emitting elements formed in the second-second display area DA2-2. Hereinafter, the second-first display area DA2-1 is also referred to as the "intermediate display area".

[0073] exist Figure 1In one embodiment, a second display area DA2-1 is provided on the left and right sides of the second display area DA2-2. The left and right width of the second display area DA2-1 can be about half the left and right width of the second display area DA2-2. Furthermore, in the area adjacent to the second display area DA2-2, a first display area DA1 is provided in the area where the second display area DA2-1 is not provided. Based on the second display area DA2-2, the direction in which the second display area DA2-1 is provided can be aligned with the extension direction (first direction) of the wiring connected to the gate electrode of the transmission transistor (eighth transistor). Additionally, transparent connection wiring formed in the second display area DA2-2 can extend from the second display area DA2-1 to the second display area DA2-2.

[0074] Despite Figure 1 Although not illustrated, a peripheral area can be set outside the display area DA. Additionally, although in Figure 1 The illustration shows a display panel for a mobile phone, but this embodiment can be applied to a display panel in which optical elements (OS) can be mounted on the back of the display panel.

[0075] The following is through Figure 2 To observe the structure of the display area DA in more detail.

[0076] Figure 2 This is a magnified and simplified diagram showing the first display area and the second display area in a light-emitting display device according to one embodiment.

[0077] exist Figure 2 The illustration details the arrangement of pixel circuits and light-emitting elements constituting pixels in the first display area (general display area) DA1, the second-1st display area (intermediate display area) DA2-1, and the second-2nd display area (transparent display area) DA2-2 according to an embodiment, as well as the structure of the transmission transistor (hereinafter also referred to as the eighth transistor) and transparent connection wiring attached to the second display area DA2.

[0078] First, the first display area (general display area) DA1 has multiple light-emitting elements and multiple pixel circuit sections (hereinafter also referred to as pixel circuit sections for general display area) Prda1, Pgda1, and Pbda1 formed in the same quantity. Figure 2The pixel circuit sections Prda1, Pgda1, and Pbda1 are simplified as rectangular quadrilaterals, while the anodes Arda1, Agda1, and Abda1 in the light-emitting element are simplified as circles. The anodes Arda1, Agda1, and Abda1 may be positioned above the pixel circuit sections Prda1, Pgda1, and Pbda1 and overlap with them in the plan view. Furthermore, the anodes Arda1, Agda1, and Abda1 are shown as linear connecting portions protruding from the circles, clearly indicating which pixel circuit sections Prda1, Pgda1, and Pbda1 they connect to. The light-emitting element, in addition to the anode, also includes a light-emitting layer and a cathode (see reference). Figure 13 The planar pattern of the light-emitting element can be the same as the pattern of the anodes Arda1, Agda1, and Abda1 excluding the connecting portion. According to the embodiment, the anodes Arda1, Agda1, and Abda1 excluding the connecting portion can have various patterns such as rhombus, hexagon, and octagon.

[0079] exist Figure 2 In one embodiment, pixels are repeatedly arranged in units of four pixels. Each unit pixel consists of one red pixel, one blue pixel, and two green pixels. However, according to the embodiment (see reference...) Figure 10 ( ), which may include at least one red pixel, at least one green pixel and at least one blue pixel.

[0080] exist Figure 2 In one embodiment, there is a structure that allows for position switching between the red pixel circuit section Prda1 and the blue pixel circuit section Pbda1 in each row.

[0081] The PPI value of the pixel located in the second display area DA2 is set to be lower than the PPI value of the pixel located in the first display area DA1.

[0082] The 2-1 display area (center display area) DA2-1 is equipped with multiple pixel circuit sections Prda2-1, Prda2-2, Pgda2-1, Pgda2-2, Pbda2-1, Pbda2-2 and multiple light-emitting elements. Figure 2The diagram shows the anodes Arda2-1, Agda2-1, and Abda2-1 of multiple light-emitting elements. The multiple pixel circuit sections Prda2-1, Prda2-2, Pgda2-1, Pgda2-2, Pbda2-1, and Pbda2-2 of the second-1 display area (intermediate display area) DA2-1 are divided into pixel circuit sections for the second-1 display area (hereinafter also referred to as pixel circuit sections for the intermediate display area) Prda2-1, Pgda2-1, and Pbda2-1, and pixel circuit sections for the second-2 display area (hereinafter also referred to as pixel circuit sections for the transparent display area) Prda2-2, Pgda2-2, and Pbda2-2. The pixel circuit units Prda2-1, Pgda2-1, and Pbda2-1 in the second-1 display area are pixel circuit units that transmit light-emitting current to the anodes Arda2-1, Agda2-1, and Abda2-1 located in the second-1 display area (middle display area) DA2-1. The pixel circuit units Prda2-1, Pgda2-1, and Pbda2-1 in the second-1 display area can correspond one-to-one with the anodes Arda2-1, Agda2-1, and Abda2-1 located in the second-1 display area (middle display area) DA2-1.

[0083] The pixel circuits Prda2-2, Pgda2-2, and Pbda2-2 of the 2-2 display area are located in the 2-1 display area (intermediate display area) DA2-1, but generate light-emitting current to be transmitted to the light-emitting element located in the 2-2 display area (transparent display area) DA2-2.

[0084] The pixel circuit units Prda2-1, Pgda2-1, and Pbda2-1 for the 2-1 display area and the pixel circuit units Prda2-2, Pgda2-2, and Pbda2-2 for the 2-2 display area have the same planar structure and circuit structure as each other, except for the structure connected to the anode.

[0085] exist Figure 2 In the embodiment, four pixel circuit sections Prda2-1, Pgda2-1, and Pbda2-1 are continuously formed in the second-1 display area, and two second-2 display area pixel circuit sections Prda2-2, Pgda2-2, and Pbda2-2 are arranged on each side of the second-1 display area. However, according to the embodiment, various arrangements can be made, as one example (see reference). Figure 10 The pixel circuit units Prda2-1, Pgda2-1, Pbda2-1 for the 2-1 display area and the pixel circuit units Prda2-2, Pgda2-2, Pbda2-2 for the 2-2 display area can also be arranged alternately one by one.

[0086] In the 2-2 display area (transparent display area) DA2-2, no pixel circuit section is formed, but multiple light-emitting elements, a transmission transistor (eighth transistor) T8, and wiring connected to these (transparent connection wiring TCL1 and light-emitting control line 155) are formed.

[0087] exist Figure 2 In the 2-2 display area (transparent display area) DA2-2, the anodes Arda2-2, Agda2-2, Abda2-2 of the light-emitting element, the transmission transistor (eighth transistor) T8, the transparent connection wiring TCL1, and the light-emitting control line 155 are shown. One anode Arda2-2, Agda2-2, and Abda2-2 are connected to one transmission transistor (eighth transistor) T8. The gate electrode of the transmission transistor (eighth transistor) T8 is connected to the light-emitting control line 155. The light-emitting control line 155 can be a wiring that transmits a signal causing the pixel circuit section to output light-emitting current to the light-emitting element, or it can be a wiring connected to the gate electrode of an output control transistor included in the pixel circuit section. Furthermore, the input-side terminal of the transmission transistor (eighth transistor) T8 is connected to the transparent connection wiring TCL1, and the output-side terminal is connected to the anodes Arda2-2, Agda2-2, and Abda2-2. (Reference) Figure 2 The transmission transistor (eighth transistor) T8 has a structure in which it is completely overlapped with the red anode Arda2-2 and the blue anode Abda2-2 in a planar view, but only partially overlapped with the green anode Agda2-2 in a planar view. (Reference) Figure 2 The red anode Arda2-2 and the blue anode Abda2-2 receive luminous current from the transmission transistor (eighth transistor) T8, which overlaps with the green anode Agda2-2 in the plan view. The green anode Agda2-2 receives luminous current from the transmission transistor (eighth transistor) T8, which only partially overlaps with the green anode Agda2-2 in the plan view. However, according to an embodiment, the transmission transistor (eighth transistor) T8 may also be configured to receive luminous current while being configured to overlap entirely with or not overlap with the green anode Agda2-2 in the plan view.

[0088] The transparent connection wiring TCL1 is connected to the 2-2 display area located in the 2-1 display area (intermediate display area) DA2-1 by pixel circuit sections Prda2-2, Pgda2-2, and Pbda2-2, thereby receiving light-emitting current and transmitting it to the transmission transistor (eighth transistor) T8. Furthermore, the transparent connection wiring TCL1 is formed of a transparent conductive material, thereby increasing the transparency of the 2-2 display area (transparent display area) DA2-2. With this structure, the 2-2 display area (transparent display area) DA2-2 has fewer light-blocking components (pixel circuit sections and wiring, etc.) compared to the first display area DA1 and the 2-1 display area DA2-1, thus forming a sufficiently transparent area.

[0089] The transparent connection wiring TCL1 extends in a direction perpendicular to the extension direction (first direction) of the light-emitting control line 155 (second direction), and includes a first portion located in the 2-1 display area DA2-1, a second portion extending in a direction perpendicular to the extension direction (first direction) of the light-emitting control line 155 (second direction) and located in the 2-2 display area (transparent display area) DA2-2, and a connecting portion connecting the first portion and the second portion and forming in a direction parallel to the extension direction (first direction) of the light-emitting control line 155. Here, the first portion, the second portion, and the connecting portion are integrally formed from the same transparent conductive material. Multiple 2-2 display areas arranged along the column direction (second direction) are connected via the first portion of the transparent connection wiring TCL1 using pixel circuit sections Prda2-2, Pgda2-2, and Pbda2-2. Additionally, a transmission transistor (eighth transistor) T8 arranged along the column direction (second direction) is connected via the second portion of the transparent connection wiring TCL1. The light emission signals applied to the transmission transistor (eighth transistor) T8 via the light emission control line 155 through a transparent connection wiring TCL1 do not simultaneously turn on the transmission transistor (eighth transistor) T8, so that the light emission signals can be applied simultaneously without overlapping each other.

[0090] exist Figure 2In one embodiment, the second-1 display area (intermediate display area) DA2-1 is provided from the second-2 display area (transparent display area) DA2-2 along the extension direction (first direction) of the light-emitting control line 155. That is, the first display area (general display area) DA1, the second-1 display area (intermediate display area) DA2-1, and the second-2 display area (transparent display area) DA2-2 can be provided sequentially along the extension direction (first direction) of the light-emitting control line 155. The light-emitting control line 155 is continuously formed as a metal wiring throughout the first display area DA1 and the second display area DA2. However, according to an embodiment, it can be formed only in the second-2 display area (transparent display area) DA2-2 by a transparent conductive material.

[0091] According to an embodiment, the wiring (scan lines and initialization control lines, etc.) required in the 2-2 display area (transparent display area) DA2-2 can pass through the 2-1 display area (intermediate display area) DA2-1 or the first display area (general display area) DA1. The passing wiring can contain a transparent conductive material, and according to an embodiment, it can also contain an opaque metal. According to an embodiment, the passing wiring can be arranged along the periphery of the 2-2 display area (transparent display area) DA2-2.

[0092] according to Figure 2 In one embodiment, the sum of the number of pixel circuit sections Prda2-1, Pgda2-1, and Pbda2-1 in the second-1st display area (intermediate display area) DA2-1 and the number of pixel circuit sections Prda2-2, Pgda2-2, and Pbda2-2 in the second-2nd display area is half the number of pixel circuit sections Prda1, Pgda1, and Pbda1 in the first display area (general display area) DA1. The number of pixel circuit sections Prda2-1, Pgda2-1, and Pbda2-1 for the 2-1 display area (intermediate display area) DA2-1 and the number of pixel circuit sections Prda2-2, Pgda2-2, and Pbda2-2 for the 2-2 display area are the same. Therefore, the number of pixels (or light-emitting elements) in the 2-1 display area (intermediate display area) DA2-1 or the 2-2 display area (transparent display area) DA2-2 is 1 / 4 of the number of pixels (or light-emitting elements) in the first display area (general display area) DA1.

[0093] However, according to the embodiments (reference) Figure 15The sum of the number of pixel circuit sections Prda2-1, Pgda2-1, and Pbda2-1 in the second-1st display area (intermediate display area) DA2-1 and the number of pixel circuit sections Prda2-2, Pgda2-2, and Pbda2-2 in the second-2nd display area can be the same as the number of pixel circuit sections Prda1, Pgda1, and Pbda1 in the first display area (general display area) DA1. In this case, the number of pixels (or light-emitting elements) in the second-1st display area (intermediate display area) DA2-1 or the second-2nd display area (transparent display area) DA2-2 can be half the number of pixels (or light-emitting elements) in the first display area (general display area) DA1. On the other hand, according to the embodiment, the number of light-emitting elements in the second-1st display area (intermediate display area) DA2-1 or the second-2nd display area (transparent display area) DA2-2 can be different, and the ratio of the number of light-emitting elements between each display area can also be varied.

[0094] The above is based on Figure 2 The overall structure of the first display area DA1 and the second display area DA2 was observed.

[0095] The following is through Figure 3 The observation is centered on the structure in the second display area DA2 that makes the light-emitting element of the second-2 display area (transparent display area) DA2-2 emit light.

[0096] Figure 3 This is a configuration diagram showing a portion of the constituent elements in the second display area of ​​a light-emitting display device according to an embodiment.

[0097] exist Figure 3 The second-1 display area (middle display area) DA2-1 is shown, but the pixel circuits Prda2-1, Pgda2-1, and Pbda2-1 for emitting light from the light-emitting element located in the second-1 display area (middle display area) DA2-1 are not shown. Only the pixel circuit Pda2-2 for the second-2 display area is shown.

[0098] exist Figure 3 In the middle display area DA2-1, the pixel circuit units Prda2-1, Pgda2-1, and Pbda2-1 for the 2-1 display area can be set in the area where the pixel circuit unit Pda2-2 for the 2-2 display area is not set.

[0099] The second-second display area (middle display area) DA2-1 is electrically connected to the transparent connection wiring TCL1 via the pixel circuit section Pda2-2 through the opening CNT1. The transparent connection wiring TCL1 extends into the second-second display area (transparent display area) DA2-2 and is electrically connected to the input terminal of the transmission transistor (eighth transistor) T8 via the opening CNT2. Figure 3 The diagram shows the semiconductor SC8 of the transfer transistor (eighth transistor) T8, and illustrates the structure in which the transparent connection wiring TCL1 and the input side of the semiconductor SC8 are electrically connected through the opening CNT2. Furthermore, the output side of the semiconductor SC8 of the transfer transistor (eighth transistor) T8 is electrically connected to the anode Ada2-2 through the opening CNT3.

[0100] exist Figure 3 In this embodiment, the transparent connection wiring TCL1 is divided into wiring connected via the upper side and wiring connected via the lower side. A structure is shown where the first and second portions of the transparent connection wiring TCL1 are connected between wirings located close to each other at the boundary between the 2-1 display area (intermediate display area) DA2-1 and the 2-2 display area (transparent display area) DA2-2. According to this connection structure, it has the advantage that the transparent connection wiring TCL1 can be formed in a single transparent conductive layer because they do not intersect each other.

[0101] On the other hand, light-emitting control lines 155 are continuously formed in the 2-1 display area (intermediate display area) DA2-1 and the 2-2 display area (transparent display area) DA2-2, and the light-emitting control lines 155 intersect with the semiconductor SC8 of the transmission transistor (eighth transistor) T8. The portion of the light-emitting control line 155 that overlaps with the semiconductor SC8 in the plan view constitutes the gate electrode of the transmission transistor (eighth transistor) T8, and the portion of the semiconductor SC8 that overlaps with the light-emitting control line 155 in the plan view constitutes the channel of the transmission transistor (eighth transistor) T8.

[0102] Semiconductor SC8 can be formed from silicon semiconductor or oxide semiconductor, and the portions other than the channel (input side and output side) can be doped or plasma treated to have conductivity properties equivalent to a conductor.

[0103] exist Figure 3 In the diagram, the transfer transistor (eighth transistor) T8 in the second-second display area (transparent display area) DA2-2 is shown in a position that does not overlap with the anode Ada2-2 on the plan view. However, in order to widen the transparent area of ​​the second-second display area (transparent display area) DA2-2, the transfer transistor (eighth transistor) T8 may overlap with the anode Ada2-2 on the plan view.

[0104] like Figure 3 In this embodiment, multiple transmission transistors (eighth transistors) T8 are used to connect multiple anodes Ada2-2 of the second-2 display area (transparent display area) DA2-2 and multiple second-2 display areas (intermediate display area) DA2-1 using pixel circuit sections Pda2-2 through a transparent connection wiring TCL1. According to this embodiment, compared to a comparative example where a pixel circuit section Pda2-2 of the second-2 display area (intermediate display area) DA2-1 and an anode Ada2-2 of the second-2 display area (transparent display area) DA2-2 are connected by a single connection wiring, the number of connection wirings can be reduced. That is, in structures like the comparative example, when a light-emitting element (or anode Ada2-2) is formed in the second-2 display area (transparent display area) DA2-2, a single connection wiring is required. As a result, in the comparative example, the number of light-emitting elements (or anodes Ada2-2) that can be formed in the 2-2 display area (transparent display area) DA2-2 is the same as the number of connecting wires.

[0105] However, in this embodiment, by using the transmission transistor (eighth transistor) T8 to connect multiple light-emitting elements (or anodes Ada2-2), the limitations of the connection wiring can be overcome to form light-emitting elements (or anodes Ada2-2) in the 2-2 display area (transparent display area) DA2-2, thereby achieving high resolution or PPI. In this case, transparent connection wiring TCL1 is used, so the transparency characteristics of the 2-2 display area (transparent display area) DA2-2 are not reduced. Furthermore, according to the embodiment, the transmission transistor (eighth transistor) T8 can be formed to overlap with the anode Ada2-2 or the light-emitting elements, thereby ensuring that the transparency characteristics of the 2-2 display area (transparent display area) DA2-2 are not reduced.

[0106] exist Figure 2 as well as Figure 3 Only those shown in Figure 1 The image shows the left 2-1 display area (middle display area) DA2-1 of the two 2-1 display areas (middle display areas) DA2-1 shown. However, a 2-1 display area (middle display area) DA2-1 can also be set on the right side, in which case... Figure 2 as well as Figure 3 It can have a symmetrical structure.

[0107] The following uses Figure 4 The method of forming the transmission transistor (eighth transistor) T8 and the anode Ada2-2 in the 2-2 display area (transparent display area) DA2-2 is observed in turn.

[0108] Figure 4 This is a diagram showing the manufacturing steps of the eighth transistor and the surrounding structure of the second-2 display area in a light-emitting display device according to an embodiment.

[0109] Figure 4 (A) illustrates the steps of forming a semiconductor SC8 on a substrate 110 using a silicon semiconductor or an oxide semiconductor. Subsequently, after forming an insulating film covering the semiconductor SC8, as... Figure 4 (B) A light-emitting control line 155 is formed. After forming the light-emitting control line 155, the semiconductor SC8 is doped or plasma-treated using the light-emitting control line 155 as a mask to conduct the semiconductor except for the channel, thereby giving it conductor-like properties. Then, after forming an insulating film covering the light-emitting control line 155, as... Figure 4 (C) forms openings CNT2-1 and CNT3-1 in the insulating film, exposing a portion of the input and output sides of the semiconductor SC8. Then, as... Figure 4 (D) forms connecting parts MCL2-1 and MCL3-1 that cover the openings CNT2-1 and CNT3-1. Then, an insulating film is formed covering the connecting parts MCL2-1 and MCL3-1, such as... Figure 4 (E) forms an opening CNT2-2 that exposes the connecting component MCL2-1. Then, as... Figure 4 (F) forms a transparent connection wiring TCL1, which is electrically connected to the connection component MCL2-1 and the input side of the semiconductor SC8 through the opening CNT2-2. Afterwards, an insulating film is formed covering the transparent connection wiring TCL1, as... Figure 4 (G) forms an opening CNT3-2, exposing a portion of the connecting component MCL3-1. Then, as... Figure 4 (H) forms the anode connection component ACL3-1, which is electrically connected to the connection component MCL3-1 and the output side of the semiconductor SC8 through the opening CNT3-2. Then, as... Figure 4 (I) forms an anode Ada2-2 that is electrically connected to the anode connection component ACL3-1.

[0110] According to this structure, the transmission transistor (eighth transistor) T8 is turned on according to the light-emitting control signal transmitted through the light-emitting control line 155, and at this time the light-emitting current being transmitted through the transparent connection wiring TCL1 is transmitted to the anode Ada2-2.

[0111] According to embodiments, it may also include an insulating film, an opening, a connecting component, or omit some of them.

[0112] In addition, Figure 4The processes shown are those for forming the transmission transistor (eighth transistor) T8, transparent connection wiring TCL1, and anode Ada2-2 in the 2-2 display area (transparent display area) DA2-2. However, these processes can be combined with the processes for forming pixel circuit sections in the first display area (general display area) DA1 and the 2-1 display area (intermediate display area) DA2-1. That is, the transistors included in the pixel circuit section can be combined with... Figure 4 The (A) and (B) processes are used together to form a semiconductor and a gate electrode, and a portion of the semiconductor is made conductive through doping or plasma processes.

[0113] However, according to embodiments, a pixel circuit section including transistors that do not contain both types of semiconductors can be used, as described below. Figures 5 to 9 An embodiment having a pixel circuit section that includes both transistors using silicon semiconductors and transistors using oxide semiconductors was observed.

[0114] Figure 5 as well as Figure 6 This is a circuit diagram including a pixel in a light-emitting display device according to one embodiment. Figure 7 This is a pixel configuration diagram according to one embodiment. Figure 8 It is along Figure 7 Cross-sectional view of line VII-VII, Figure 9 This is a cross-sectional view of the sixth and eighth transistors in the second display area of ​​a light-emitting display device according to an embodiment.

[0115] First, through Figure 5 as well as Figure 6 Observe the circuit structure of a pixel, including the pixel circuit section and the light-emitting element.

[0116] exist Figure 5 The circuit structure shown is the circuit structure of the first display area (general display area) DA1 and the pixel circuit section and light-emitting element formed in the second-first display area (intermediate display area) DA2-1. Figure 6 The circuit structure shown is a circuit structure in which a pixel circuit section is provided in the 2-1 display area (middle display area) DA2-1, and a light-emitting element and a transmission transistor (eighth transistor) T8 are provided in the 2-2 display area (transparent display area) DA2-2.

[0117] First, through Figure 5 Observe the pixel located in the first display area (general display area) DA1, the pixel circuit section of the second-1 display area formed in the second-1 display area (intermediate display area) DA2-1, and the circuit structure of the light-emitting element located in the second-1 display area (intermediate display area) DA2-1.

[0118] According to one embodiment, a pixel includes a plurality of transistors T1, T2, T3, T4, T5, T6, T7, a holding capacitor Cst, and a boost capacitor C connected to a plurality of wirings 127, 128, 151, 152, 153, 155, 171, 172, 741. boost And a light-emitting element (LED). Here, the light-emitting element (LED) is a light-emitting diode, and the remaining transistors and capacitors constitute the pixel circuit section. According to the embodiment, the boost capacitor C can be omitted. boost .

[0119] Multiple wirings 127, 128, 151, 152, 153, 155, 171, 172, and 741 are connected within a single pixel. These wirings include a first initialization voltage line 127, a second initialization voltage line 128, a first scan line 151, a second scan line 152, an initialization control line 153, an emission control line 155, a data line 171, a drive voltage line 172, and a common voltage line 741. Figure 5 In one embodiment, the first scan line 151 connected to the seventh transistor T7 is also connected to the second transistor T2. However, according to the embodiment, the seventh transistor T7 may also be connected to a different bypass control line than the second transistor T2.

[0120] The first scan line 151 is connected to the scan drive unit (not shown) and transmits the first scan signal GW to the second transistor T2 and the seventh transistor T7. The second scan line 152 can be applied with a voltage of opposite polarity to the voltage applied to the first scan line 151 at the same timing as the signal of the first scan line 151. For example, when a negative voltage is applied to the first scan line 151, a positive voltage can be applied to the second scan line 152. The second scan line 152 transmits the second scan signal GC to the third transistor T3. The initialization control line 153 transmits the initialization control signal GI to the fourth transistor T4. The light emission control line 155 transmits the light emission control signal EM to the fifth transistor T5 and the sixth transistor T6.

[0121] Data line 171 serves as the wiring for transmitting the data voltage DATA generated from the data driving unit (not shown), thereby changing the magnitude of the luminous current transmitted to the light-emitting element LED, and thus changing the brightness of the light emitted by the light-emitting element LED. Driving voltage line 172 applies a driving voltage ELVDD. First initialization voltage line 127 transmits a first initialization voltage Vinit, and second initialization voltage line 128 transmits a second initialization voltage AVinit. Common voltage line 741 applies a common voltage ELVSS to the cathode of the light-emitting element LED. In this embodiment, the voltages applied to driving voltage line 172, first and second initialization voltage lines 127 and 128, and common voltage line 741 can all be constant voltages.

[0122] The driving transistor (or first transistor) T1 is a p-type transistor with silicon semiconductor as its semiconductor layer. It is a transistor that adjusts the magnitude of the luminous current output to the anode of the light-emitting element LED based on the voltage of the gate electrode of the driving transistor T1 (i.e., the voltage stored in the holding capacitor Cst). The brightness of the light-emitting element LED is adjusted based on the magnitude of the luminous current output to the anode electrode of the light-emitting element LED; therefore, the brightness of the light-emitting element LED can be adjusted based on the data voltage DATA applied to the pixel. For this purpose, the first electrode of the driving transistor T1 is configured to receive the applied driving voltage ELVDD, and is connected to the driving voltage line 172 via the fifth transistor T5. Furthermore, the first electrode of the driving transistor T1 is also connected to the second electrode of the second transistor T2, thereby also receiving the data voltage DATA. On the other hand, the second electrode of the driving transistor T1 outputs luminous current to the light-emitting element LED, and is connected to the anode of the light-emitting element LED via the sixth transistor (hereinafter also referred to as the output control transistor) T6. Additionally, the second electrode of the driving transistor T1 is also connected to the third transistor T3, thereby transmitting the data voltage DATA applied to the first electrode to the third transistor T3. On the other hand, the gate electrode of the driving transistor T1 is connected to one electrode of the holding capacitor Cst (hereinafter referred to as the "second holding electrode"). In this case, the voltage of the gate electrode of the driving transistor T1 changes according to the voltage stored in the holding capacitor Cst, thereby changing the light-emitting current output by the driving transistor T1. The holding capacitor Cst serves to maintain a constant voltage at the gate electrode of the driving transistor T1 during a frame. Furthermore, the gate electrode of the driving transistor T1 can also be connected to a third transistor T3, so that the data voltage DATA applied to the first electrode of the driving transistor T1 is transmitted to the gate electrode of the driving transistor T1 via the third transistor T3. Additionally, the gate electrode of the driving transistor T1 can also be connected to a fourth transistor T4, thereby receiving the first initialization voltage Vinit for initialization.

[0123] The second transistor T2 is a p-type transistor, and its semiconductor layer contains silicon semiconductor. The second transistor T2 is the transistor that receives the data voltage DATA into the pixel. The gate electrode of the second transistor T2 is connected to the first scan line 151 and the boost capacitor C. boost One electrode of the first transistor T2 (hereinafter referred to as the "lower boost electrode") is connected. The first electrode of the second transistor T2 is connected to the data line 171. The second electrode of the second transistor T2 is connected to the first electrode of the driving transistor T1. If the second transistor T2 is turned on by the negative voltage in the first scan signal GW transmitted through the first scan line 151, the data voltage DATA transmitted through the data line 171 is transmitted to the first electrode of the driving transistor T1, and finally the data voltage DATA is transmitted to the gate electrode of the driving transistor T1 and stored in the holding capacitor Cst.

[0124] The third transistor T3 is an n-type transistor with an oxide semiconductor layer. The third transistor T3 electrically connects the second electrode of the driving transistor T1 to its gate electrode. As a result, the data voltage DATA is stored at the second holding electrode of the holding capacitor Cst after being compensated for the threshold voltage of the driving transistor T1. The gate electrode of the third transistor T3 is connected to the second scan line 152, and the first electrode of the third transistor T3 is connected to the second electrode of the driving transistor T1. The second electrode of the third transistor T3 is connected to the second holding electrode of the holding capacitor Cst, the gate electrode of the driving transistor T1, and the boost capacitor C... boost The other electrode (hereinafter referred to as the "boost electrode") is connected. The third transistor T3 is turned on by the positive voltage in the second scan signal GC received through the second scan line 152, thereby connecting the gate electrode of the driving transistor T1 to the second electrode of the driving transistor T1, and transferring the voltage applied to the gate electrode of the driving transistor T1 to the second holding electrode of the holding capacitor Cst and storing it in the holding capacitor Cst. At this time, the voltage stored in the holding capacitor Cst is stored as a state that compensates for the threshold voltage Vth value of the driving transistor T1 by storing the voltage of the gate electrode of the driving transistor T1 when the driving transistor T1 is turned off.

[0125] The fourth transistor T4 is an n-type transistor with an oxide semiconductor layer. The fourth transistor T4 initializes the gate electrode of the driving transistor T1 and the second holding electrode of the holding capacitor Cst. The gate electrode of the fourth transistor T4 is connected to the initialization control line 153, and the first electrode of the fourth transistor T4 is connected to the first initialization voltage line 127. The second electrode of the fourth transistor T4 is connected to the second electrode of the third transistor T3, the second holding electrode of the holding capacitor Cst, the gate electrode of the driving transistor T1, and the boost capacitor C. boostThe fourth transistor T4 is turned on by the positive voltage in the initialization control signal GI received through the initialization control line 153. At this time, the first initialization voltage Vinit is transmitted to the gate electrode of the driving transistor T1, the second holding electrode of the holding capacitor Cst, and the boost capacitor C. boost It is initialized by the rising voltage electrode.

[0126] The fifth transistor T5 and the sixth transistor T6 are p-type transistors, and the semiconductor layer has silicon semiconductor.

[0127] The fifth transistor T5 transmits the driving voltage ELVDD to the driving transistor T1. The gate electrode of the fifth transistor T5 is connected to the light-emitting control line 155, the first electrode of the fifth transistor T5 is connected to the driving voltage line 172, and the second electrode of the fifth transistor T5 is connected to the first electrode of the driving transistor T1.

[0128] The sixth transistor T6 is responsible for transmitting the light-emitting current output from the driving transistor T1 to the light-emitting element LED. The gate electrode of the sixth transistor T6 is connected to the light-emitting control line 155, the first electrode of the sixth transistor T6 is connected to the second electrode of the driving transistor T1, and the second electrode of the sixth transistor T6 is connected to the anode of the light-emitting element LED.

[0129] The seventh transistor T7 is a p-type transistor, and its semiconductor layer is made of silicon semiconductor or oxide semiconductor. The seventh transistor T7 serves to initialize the anode of the light-emitting element LED. The gate electrode of the seventh transistor T7 is connected to the first scan line 151, the first electrode of the seventh transistor T7 is connected to the anode of the light-emitting element LED, and the second electrode of the seventh transistor T7 is connected to the second initialization voltage line 128. If the seventh transistor T7 is turned on by a negative voltage in the first scan line 151, the second initialization voltage AVinit is applied to the anode of the light-emitting element LED for initialization. Alternatively, the gate electrode of the seventh transistor T7 can also be connected to another bypass control line and controlled by wiring separate from the first scan line 151. Furthermore, according to an embodiment, the second initialization voltage line 128 to which the second initialization voltage AVinit is applied can be the same as the first initialization voltage line 127 to which the first initialization voltage Vinit is applied.

[0130] This explains that a pixel consists of seven transistors T1 to T7 and two capacitors (holding capacitor Cst and boost capacitor C). boost However, this is not the only possibility; according to the embodiments, the boost capacitor C can also be removed. boostFurthermore, although this is an embodiment in which the third and fourth transistors are formed as n-type transistors, it is also possible for only one of these to be formed as an n-type transistor, or for other transistors to be formed as n-type transistors.

[0131] The above has been approved. Figure 5 The pixel located in the first display area (general display area) DA1 and the pixel circuit section of the second-1 display area (intermediate display area) DA2-1 and the light-emitting element located in the second-1 display area (intermediate display area) DA2-1 were observed.

[0132] In response, the following is adopted Figure 6 The circuit structure of the pixel circuit section of the 2-2 display area formed in the 2-1 display area (intermediate display area) DA2-1 and the light-emitting element located in the 2-2 display area (transparent display area) DA2-2 is observed.

[0133] exist Figure 6 The circuit structure shown is a circuit structure in which a pixel circuit section is provided in the 2-1 display area (middle display area) DA2-1, and a light-emitting element and a transmission transistor (eighth transistor) T8 are provided in the 2-2 display area (transparent display area) DA2-2.

[0134] exist Figure 6 In the diagram, the components located in the 2-2 display area (transparent display area) DA2-2 of the circuit structure are clearly shown by the dashed lines. These components are the light-emitting element LED and the transmission transistor (eighth transistor) T8.

[0135] exist Figure 6 The structure of the pixel circuit section in the 2-2 display area formed in the 2-1 display area (middle display area) DA2-1 is similar to... Figure 5 The same. That is, a pixel circuit section includes seven transistors T1 to T7 and two capacitors (holding capacitor Cst, boost capacitor C...). boost ).

[0136] The following is based on Figure 6 Zhongyu Figure 5 The distinguishing part is the component located in display area 2-2 (transparent display area) DA2-2, which is observed as follows.

[0137] In the pixel circuit section of the 2-2 display area formed in the 2-1 display area (intermediate display area) DA2-1, the light-emitting current output from the sixth transistor T6 is transmitted to the transmission transistor (eighth transistor) T8. According to Figures 2 to 4 The connection between the sixth transistor T6 and the transmission transistor (eighth transistor) T8 can be achieved through transparent connection wiring TCL1.

[0138] The transmission transistor (eighth transistor) T8 located in the 2-2 display area (transparent display area) DA2-2 is a p-type transistor like the sixth transistor T6, and has silicon semiconductor as the semiconductor layer.

[0139] The transmission transistor (eighth transistor) T8 receives the light-emitting current output from the driving transistor T1 via the sixth transistor T6 and transmits it to the light-emitting element LED located in the 2-2 display area (transparent display area) DA2-2. The gate electrode of the transmission transistor (eighth transistor) T8 is connected to the light-emitting control line 155, the first electrode of the transmission transistor (eighth transistor) T8 is connected to the second electrode of the sixth transistor T6, and the second electrode of the transmission transistor (eighth transistor) T8 is connected to the anode of the light-emitting element LED.

[0140] The gate electrodes of the transmission transistor (eighth transistor) T8, the sixth transistor T6, and the fifth transistor T5 are all connected to the same light-emitting control line 155, so that they are controlled by the same light-emitting signal and turned on at the same timing.

[0141] According to an embodiment, when the sixth transistor T6 is an n-type transistor containing oxide semiconductor, the transfer transistor (eighth transistor) T8 can also be an n-type transistor containing oxide semiconductor. That is, the sixth transistor T6 and the transfer transistor (eighth transistor) T8 can be transistors with the same characteristics, and the channel dimensions (length and width) can also be formed in the same way.

[0142] The following is through Figure 7 as well as Figure 8 Observation located in Figure 5 The configuration and cross-sectional structure of the pixel circuit section of the first display area (general display area) DA1 and the second-first display area pixel circuit section formed in the second-first display area (intermediate display area) DA2-1.

[0143] A first semiconductor layer formed of silicon semiconductor is disposed on substrate 110. The first semiconductor layer includes a channel 1132 for driving transistor T1, a first region 1131, and a second region 1133. Furthermore, the first semiconductor layer includes not only the driving transistor T1, but also channels for second transistor T2, fifth transistor T5, sixth transistor T6, and seventh transistor T7. Regions with conductive layer properties are formed on both sides of each channel through plasma treatment or doping, thereby functioning as a first electrode and a second electrode. Substrate 110 may contain a material with rigid properties, such as glass, that does not bend, or a flexible material that can be bent, such as plastic or polyimide.

[0144] The channel 1132 of the driving transistor T1 can be configured as a curved shape on a plane. However, the shape of the channel 1132 of the driving transistor T1 is not limited to this and can be modified in various ways. For example, the channel 1132 of the driving transistor T1 can also be bent into other shapes, or it can also be configured as a rod shape. A first region 1131 and a second region 1133 of the driving transistor T1 can be disposed on both sides of the channel 1132. The first region 1131 and the second region 1133 located in the first semiconductor layer perform the functions of the first electrode and the second electrode of the driving transistor T1. The first region 1131 of the driving transistor T1 is located in... Figure 4 The second region 1133 of the driving transistor T1 extends upward in the vertical direction (second direction), with the downward-extending portion connected to the second electrode of the second transistor T2 and the upward-extending portion connected to the second electrode of the fifth transistor T5. The second region 1133 of the driving transistor T1 extends upward in the plane and is connected to the first electrode of the sixth transistor T6, and extends downward and is connected to the third transistor T3.

[0145] A first gate insulating film 141 may be disposed on a first semiconductor layer including the channel 1132, the first region 1131, and the second region 1133 of the driving transistor T1. The first gate insulating film 141 may contain silicon nitride (SiN). x ), silicon dioxide (SiO) x ), silicon oxynitride (SiO) x N y Inorganic insulating materials such as )

[0146] A first gate conductive layer, including the gate electrode 1151 of the driving transistor T1, may be disposed on the first gate insulating film 141. The first gate conductive layer includes not only the driving transistor T1, but also the gate electrodes of the second transistor T2, the fifth transistor T5, the sixth transistor T6, and the seventh transistor T7, as well as a boost capacitor C. boost The lower boost electrode 151a. The gate electrode 1151 of the driving transistor T1 may overlap with the channel 1132 of the driving transistor T1. The channel 1132 of the driving transistor T1 is covered by the gate electrode 1151 of the driving transistor T1.

[0147] The first gate conductive layer may further include a first scan line 151 and a light-emitting control line 155. The first scan line 151 and the light-emitting control line 155 may extend in a generally lateral direction (first direction). The first scan line 151 may be connected to the gate electrode of the second transistor T2. The first scan line 151 may be integrally formed with the gate electrode of the second transistor T2. The first scan line 151 is also connected to the gate electrode of the seventh transistor T7, and the gate electrodes of the fifth transistor T5 and the sixth transistor T6 are connected to the light-emitting control line 155.

[0148] After forming the first gate conductive layer including the gate electrode 1151 of the driving transistor T1, a plasma treatment or doping process can be performed to make the exposed region of the first semiconductor layer conductive. That is, the first semiconductor layer that is blocked by the first gate conductive layer may not be conductive, and the portion of the first semiconductor layer not covered by the first gate conductive layer has the same characteristics as the conductive layer. As a result, the transistor including the conductive portion has p-type transistor characteristics, so the driving transistor T1, the second transistor T2, the fifth transistor T5, the sixth transistor T6, and the seventh transistor T7 can be p-type transistors.

[0149] A second gate insulating film 142 may be disposed on the first gate conductive layer including the gate electrode 1151 of the driving transistor T1 and the first gate insulating film 141. The second gate insulating film 142 may contain silicon nitride (SiN). x ), silicon dioxide (SiO) x ), silicon oxynitride (SiO) x N y Inorganic insulating materials such as )

[0150] A second gate conductive layer, including a first holding electrode 1153 for holding capacitor Cst, a lower shielding layer 3155 for the third transistor T3, and a lower shielding layer 4155 for the fourth transistor T4, can be disposed on the second gate insulating film 142. The lower shielding layers 3155 and 4155 can be located below the channels of the third transistor T3 and the fourth transistor T4, respectively, thereby shielding against light or electromagnetic interference supplied to the channels from below.

[0151] The first holding electrode 1153 overlaps with the gate electrode 1151 of the driving transistor T1 to form a holding capacitor Cst. An opening 1152 is formed in the first holding electrode 1153 of the holding capacitor Cst. The opening 1152 of the first holding electrode 1153 of the holding capacitor Cst can overlap with the gate electrode 1151 of the driving transistor T1. The lower shielding layer 3155 of the third transistor T3 can overlap with the channel 3137 and the gate electrode 3151 of the third transistor T3. The lower shielding layer 4155 of the fourth transistor T4 can overlap with the channel 4137 and the gate electrode 4151 of the fourth transistor T4.

[0152] The second gate conductive layer may further include a lower second scan line 152a, a lower initialization control line 153a, and a first initialization voltage line 127. The lower second scan line 152a, lower initialization control line 153a, and first initialization voltage line 127 may extend in a generally lateral direction (first direction). The lower second scan line 152a may be connected to the lower shielding layer 3155 of the third transistor T3. The lower second scan line 152a may be integrally formed with the lower shielding layer 3155 of the third transistor T3. The lower initialization control line 153a may be connected to the lower shielding layer 4155 of the fourth transistor T4. The lower initialization control line 153a may be integrally formed with the lower shielding layer 4155 of the fourth transistor T4.

[0153] A first interlayer insulating film 161 may be disposed on the second gate conductive layer, which includes the first holding electrode 1153 of the holding capacitor Cst, the lower shielding layer 3155 of the third transistor T3, and the lower shielding layer 4155 of the fourth transistor T4. The first interlayer insulating film 161 may comprise silicon nitride (SiN). x ), silicon dioxide (SiO) x ), silicon oxynitride (SiO) x N y Inorganic insulating materials such as inorganic insulating materials can be formed to a thick thickness, according to embodiments. However, according to embodiments, organic materials may also be included.

[0154] An oxide semiconductor layer, including a channel 3137, a first region 3136, and a second region 3138 for a third transistor T3, and a channel 4137, a first region 4136, and a second region 4138 for a fourth transistor T4, can be formed on the first interlayer insulating film 161. Additionally, the oxide semiconductor layer may include a boost capacitor C. boost The boost electrode 3138t.

[0155] The channel 3137, first region 3136, and second region 3138 of the third transistor T3, and the channel 4137, first region 4136, and second region 4138 of the fourth transistor T4 can be interconnected and integrally formed. The first region 3136 and second region 3138 of the third transistor T3 are disposed on both sides of the channel 3137, and the first region 4136 and second region 4138 of the fourth transistor T4 are disposed on both sides of the channel 4137. The second region 3138 of the third transistor T3 is connected to the second region 4138 of the fourth transistor T4. The channel 3137 of the third transistor T3 overlaps with the lower shielding layer 3155, and the channel 4137 of the fourth transistor T4 overlaps with the lower shielding layer 4155.

[0156] Boost capacitor C boostThe boost electrode 3138t and the boost capacitor C boost The lower boost electrode 151a overlaps to form the boost capacitor C. boost .

[0157] The third transistor T3 includes channel 3137, first region 3136 and second region 3138, the fourth transistor T4 includes channel 4137, first region 4136 and second region 4138, and boost capacitor C. boost A third gate insulating film 143 may be disposed on the oxide semiconductor layer of the boost electrode 3138t.

[0158] The third gate insulating film 143 can be located on the entire surface above the oxide semiconductor layer and the first interlayer insulating film 161. Therefore, the third gate insulating film 143 can cover the channel 3137, the first region 3136 and the second region 3138 of the third transistor T3, the channel 4137, the first region 4136 and the second region 4138 of the fourth transistor T4, and the boost capacitor C. boost The third gate insulating film 143 may not be located on the top and side of the rising voltage electrode 3138t. However, this embodiment is not limited to this, and the third gate insulating film 143 may not be located on the entire surface above the oxide semiconductor layer and the first interlayer insulating film 161. For example, the third gate insulating film 143 may overlap with the channel 3137 of the third transistor T3, but not overlap with the first region 3136 and the second region 3138. In addition, the third gate insulating film 143 may overlap with the channel 4137 of the fourth transistor T4, but not overlap with the first region 4136 and the second region 4138.

[0159] A third gate conductive layer, including the gate electrode 3151 of the third transistor T3 and the gate electrode 4151 of the fourth transistor T4, can be disposed on the third gate insulating film 143.

[0160] The gate electrode 3151 of the third transistor T3 may overlap with the channel 3137 of the third transistor T3. The gate electrode 3151 of the third transistor T3 may overlap with the lower shielding layer 3155 of the third transistor T3.

[0161] The gate electrode 4151 of the fourth transistor T4 may overlap with the channel 4137 of the fourth transistor T4. The gate electrode 4151 of the fourth transistor T4 may overlap with the lower shielding layer 4155 of the fourth transistor T4.

[0162] The third gate conductive layer may also include an upper second scan line 152b and an upper initialization control line 153b.

[0163] The upper second scan line 152b and the upper initialization control line 153b can extend in a generally lateral direction (first direction). The upper second scan line 152b and the lower second scan line 152a together constitute the second scan line 152. The upper second scan line 152b can be connected to the gate electrode 3151 of the third transistor T3. The upper second scan line 152b can be integrally formed with the gate electrode 3151 of the third transistor T3. The upper initialization control line 153b and the lower initialization control line 153a together constitute the initialization control line 153. The upper initialization control line 153b can be connected to the gate electrode 4151 of the fourth transistor T4. The upper initialization control line 153b can be integrally formed with the gate electrode 4151 of the fourth transistor T4.

[0164] After forming a third gate conductive layer including the gate electrode 3151 of the third transistor T3 and the gate electrode 4151 of the fourth transistor T4, the portion of the oxide semiconductor layer shielded by the third gate conductive layer is formed into a channel through plasma processing or doping process, and the portion of the oxide semiconductor layer not covered by the third gate conductive layer is made conductive. The channel 3137 of the third transistor T3 may be located below the gate electrode 3151 to overlap with the gate electrode 3151. The first region 3136 and the second region 3138 of the third transistor T3 may not overlap with the gate electrode 3151. The channel 4137 of the fourth transistor T4 may be located below the gate electrode 4151 to overlap with the gate electrode 4151. The first region 4136 and the second region 4138 of the fourth transistor T4 may not overlap with the gate electrode 4151. The boost electrode 3138t may not overlap with the third gate conductive layer. The transistor including the oxide semiconductor layer may have the characteristics of an n-type transistor.

[0165] A second interlayer insulating film 162 may be disposed on the third gate conductive layer including the gate electrode 3151 of the third transistor T3 and the gate electrode 4151 of the fourth transistor T4. The second interlayer insulating film 162 may have a single-layer or multi-layer structure. The second interlayer insulating film 162 may contain silicon nitride (SiN). x ), silicon dioxide (SiO) x ), silicon oxynitride (SiO) x N y The insulating material may contain inorganic materials such as inorganic materials, and according to the embodiments, may also contain organic materials. The second interlayer insulating film 162 may include a first opening 1165, a second opening 1166, a third opening 3165, and a fourth opening 3166.

[0166] The first opening 1165 may overlap with at least a portion of the gate electrode 1151 of the driving transistor T1. The first opening 1165 may also be formed on the third gate insulating film 143, the first interlayer insulating film 161, and the second gate insulating film 142. The first opening 1165 may overlap with the opening 1152 of the first holding electrode 1153. The first opening 1165 may be located inside the opening 1152 of the first holding electrode 1153.

[0167] The second opening 1166 can be connected to the boost capacitor C. boost At least a portion overlaps. The second opening 1166 may also be formed on the third gate insulating film 143.

[0168] The third opening 3165 may overlap with at least a portion of the second region 1133 of the driving transistor T1. The third opening 3165 may also be formed on the third gate insulating film 143, the first interlayer insulating film 161, the second gate insulating film 142, and the first gate insulating film 141.

[0169] The fourth opening 3166 may overlap with at least a portion of the first region 3136 of the third transistor T3. The fourth opening 3166 may also be formed on the third gate insulating film 143.

[0170] A first data conductive layer, including a first connecting electrode 1175 and a second connecting electrode 3175, can be disposed on the second interlayer insulating film 162.

[0171] The first connection electrode 1175 may overlap with the gate electrode 1151 of the driving transistor T1. The first connection electrode 1175 may be connected to the gate electrode 1151 of the driving transistor T1 through the first opening 1165 and the opening 1152 of the first holding electrode 1153. The first connection electrode 1175 may also be connected to the boost capacitor C. boost Overlap. The first connecting electrode 1175 can be connected to the boost capacitor C through the second opening 1166. boost The boost electrode 3138t is connected. Therefore, the gate electrode 1151 of the driving transistor T1 and the boost capacitor C are connected through the first connection electrode 1175. boost The boost electrode 3138t can be connected. At this time, through the first connection electrode 1175, the gate electrode 1151 of the driving transistor T1 can also be connected to the second region 3138 of the third transistor T3 and the second region 4138 of the fourth transistor T4.

[0172] The second connection electrode 3175 can overlap with the second region 1133 of the driving transistor T1. The second connection electrode 3175 can be connected to the second region 1133 of the driving transistor T1 through the third opening 3165. The second connection electrode 3175 can overlap with the first region 3136 of the third transistor T3. The second connection electrode 3175 can be connected to the first region 3136 of the third transistor T3 through the fourth opening 3166. Therefore, the second region 1133 of the driving transistor T1 and the first region 3136 of the third transistor T3 can be connected through the second connection electrode 3175.

[0173] The first data conductive layer may also include a second initialization voltage line 128. The second initialization voltage line 128 may extend in a generally lateral direction (first direction).

[0174] A first organic film 163 may be disposed on a first data conductive layer including a first connecting electrode 1175 and a second connecting electrode 3175. The first organic film 163 may be formed of an organic material.

[0175] A second data conductive layer, including a data line 171 and a driving voltage line 172, can be disposed on the first organic film 163. The data line 171 and the driving voltage line 172 can extend in a generally longitudinal direction (second direction). The data line 171 can be connected to the second transistor T2. The driving voltage line 172 can be connected to the fifth transistor T5. Additionally, the driving voltage line 172 can be connected to the first holding electrode 1153.

[0176] refer to Figure 7 The second data conductive layer may additionally include an anode connection component ACL1. The anode connection component ACL1 is connected to a second region 1163 of the sixth transistor T6 exposed through an opening 3261 formed in and beneath the first organic film 163. The anode connection component ACL1 is electrically connected to the anode through an opening CNT1.

[0177] An additional organic film 164, a second organic film 180, and a third organic film 181 may be disposed on the second data conductive layer, which includes the data line 171, the drive voltage line 172, and the anode connection component ACL1. The additional organic film 164, the second organic film 180, and the third organic film 181 may be formed of organic materials.

[0178] exist Figure 7 as well as Figure 8 The illustration is omitted, but a transparent conductive wiring TCL1 can be set on the second organic film 180 and in the second-1st display area (middle display area) DA2-1, which is covered by the third organic film 181.

[0179] In addition, Figure 7 as well as Figure 8 The illustration is omitted, but an anode can be disposed on the third organic film 181. A pixel defining film can be formed on the anode and overlapping one end of the anode. An opening formed in the pixel defining film exposes the anode, a light-emitting element layer is formed within the opening, and a cathode is formed on the pixel defining film and the light-emitting element layer, thereby completing a light-emitting element LED including an anode, a light-emitting element layer, and a cathode. On the other hand, an encapsulation layer covering the cathode can also be included.

[0180] Based on the above, Figure 5 The structure was observed, and the actual configuration structure of the pixel circuit section located in the first display area (general display area) DA1 and the pixel circuit section of the second-first display area (intermediate display area) DA2-1 was observed.

[0181] The following is based on Figure 6 With the anode Ada2-2 and the transmission transistor (eighth transistor) T8 located in the 2-2 display area (transparent display area) DA2-2 as the center, observe the cross-sectional structure and connection relationship of the sixth transistor T6 in the pixel circuit section of the 2-1 display area (middle display area) DA2-1.

[0182] The sixth transistor T6 of display area 2-1 (middle display area) DA2-1 and the transmission transistor (eighth transistor) T8 of display area 2-2 (transparent display area) DA2-2 have the same cross-sectional structure.

[0183] That is, the channels of the sixth transistor T6 and the transfer transistor (eighth transistor) T8 are formed on the first semiconductor layer located on the substrate 110. A first region 1161 and a second region 1163 are formed on both sides of the channel 1162 of the sixth transistor T6 in the first semiconductor layer. The first region and the second region are also formed on both sides of the channel of the transfer transistor (eighth transistor) T8.

[0184] A first gate insulating film 141 is disposed on a first semiconductor layer including the channel 1162, first region 1161, and second region 1163 of the sixth transistor T6 and the channel, first region, and second region of the transfer transistor (eighth transistor) T8.

[0185] The gate electrodes 155 of the sixth transistor T6 and the transmission transistor (eighth transistor) T8 are disposed on the first gate insulating film 141. The gate electrodes 155 of the sixth transistor T6 and the transmission transistor (eighth transistor) T8 overlap with their respective channels. The gate electrodes 155 of the sixth transistor T6 and the transmission transistor (eighth transistor) T8 can be integrally formed as part of the light-emitting control line 155.

[0186] In the sixth transistor T6 and the transfer transistor (eighth transistor) T8, the gate electrode 155 can be used as a mask to perform plasma treatment or doping processes on the first semiconductor layer, making the exposed areas of the first semiconductor layer conductive. That is, through the gate electrode 155, the first semiconductor layer is not conductive and forms a channel, while the portion of the first semiconductor layer not covered by the gate electrode 155 is conductive and has the same characteristics as the conductive layer.

[0187] A second gate insulating film 142, a first interlayer insulating film 161, a third gate insulating film 143, and a second interlayer insulating film 162 may be sequentially disposed on the gate electrode 155 of the sixth transistor T6 and the transmission transistor (eighth transistor) T8.

[0188] An opening is formed in the first gate insulating film 141, the second gate insulating film 142, the first interlayer insulating film 161, the third gate insulating film 143, and the second interlayer insulating film 162, thereby exposing a portion of the first semiconductor layer.

[0189] The first region 1161 of the sixth transistor T6 is exposed through the opening 3165, and the second region 1133 of the driving transistor T1 and the first region 1161 of the sixth transistor T6 are electrically connected through the second connection electrode 3175 located on the second interlayer insulating film 162.

[0190] The first and second regions of the first semiconductor layer of the transmission transistor (eighth transistor) T8 are exposed through openings CNT2-1 and CNT3-1, respectively, and are connected to the first and second regions of the transmission transistor (eighth transistor) T8 through connecting components MCL2-1 and MCL3-1.

[0191] The second connecting electrode 3175 and connecting components MCL2-1 and MCL3-1 are formed on the first data conductive layer and covered by a first organic film 163 covering the first data conductive layer.

[0192] An opening 3261 is formed in the first organic film 163 and the insulating films 162, 143, 161, 142, and 141 below it, exposing the second region 1163 of the sixth transistor T6 in the opening 3261. An anode connection member ACL1 is formed on the first organic film 163 as a second data conductive layer, thereby connecting to the second region 1163 of the sixth transistor T6.

[0193] An additional organic film 164 covering the second data conductive layer is provided, exposing the anode connection component ACL1 and the connection component MCL2-1 through openings CNT1 and CNT2-2, respectively. The anode connection component ACL1 and the connection component MCL2-1 exposed through openings CNT1 and CNT2-2 are connected to each other through a transparent connection wiring TCL1 located on the additional organic film 164. The transparent connection wiring TCL1 is covered by a second organic film 180. An opening CNT3-2 is formed in the second organic film 180, the additional organic film 164, and the first organic film 163, exposing the connection component MCL3-1 through the opening CNT3-2. The exposed connection component MCL3-1 is connected to the anode connection component ACL3-1 located on the second organic film 180. The anode connection component ACL3-1 is covered by a third organic film 181, and the anode Ada2-2 and the anode connection component ACL3-1 are connected through an opening located in the third organic film 181.

[0194] According to such Figure 9 With that cross-sectional structure, the luminous current output from the sixth transistor T6 of the 2-1 display area (middle display area) DA2-1 can be transmitted to the anode Ada2-2 through the transmission transistor (eighth transistor) T8 of the 2-2 display area (transparent display area) DA2-2.

[0195] The following is through Figures 10 to 14 Observe the structure in which a portion of the anode in the 2-2 display area (transparent display area) DA2-2 is connected by a transmission transistor (eighth transistor) T8, while the remaining portion is directly connected to the 2-2 display area of ​​the 2-1 display area (middle display area) DA2-1 via a transparent connection wiring without a transmission transistor (eighth transistor) T8.

[0196] First, observe Figure 10 The structure of the embodiment is as follows.

[0197] Figure 10 This is a diagram showing the configuration of a second display area in a light-emitting display device according to one embodiment.

[0198] exist Figure 10 In the above, the anodes Arda2-2, Agda2-2, and Abda2-2 located in the 2-2 display area (transparent display area) DA2-2 can be divided into a first anode and a second anode. The first anode is an anode that does not have a transmission transistor (eighth transistor) T8 and receives the luminous current only through the transparent connection wiring TCL1. On the other hand, the second anode includes the transmission transistor (eighth transistor) T8 and uses a transparent connection wiring TCL2 to receive the luminous current from multiple anodes.

[0199] Figure 10 The second-first display area (middle display area) DA2-1 is equipped with multiple pixel circuit sections Prda2-1, Prda2-2, Pgda2-1, Pgda2-2, Pbda2-1, Pbda2-2 and multiple light-emitting elements. Figure 10 The diagram shows the anodes Arda2-1, Agda2-1, and Abda2-1 of multiple light-emitting elements. The pixel circuit sections Prda2-1, Prda2-2, Pgda2-1, Pgda2-2, Pbda2-1, and Pbda2-2 of the second-first display area (intermediate display area) DA2-1 are divided into pixel circuit sections Prda2-1, Pgda2-1, and Pbda2-1 for the second-first display area, and pixel circuit sections Prda2-2, Pgda2-2, and Pbda2-2 for the second-second display area. The pixel circuit sections Prda2-1, Pgda2-1, and Pbda2-1 for the second-first display area are the pixel circuit sections that transmit light-emitting current to the anodes Arda2-1, Agda2-1, and Abda2-1 located in the second-first display area (intermediate display area) DA2-1. The pixel circuits Prda2-1, Pgda2-1, and Pbda2-1 in the 2-1 display area and the anodes Arda2-1, Agda2-1, and Abda2-1 located in the 2-1 display area (middle display area) DA2-1 can be matched one-to-one.

[0200] The pixel circuits Prda2-2, Pgda2-2, and Pbda2-2 of the 2-2 display area are located in the 2-1 display area (intermediate display area) DA2-1, but generate light-emitting current to be transmitted to the light-emitting element located in the 2-2 display area (transparent display area) DA2-2.

[0201] exist Figure 10 In one embodiment, the pixel circuit sections Prda2-1, Pgda2-1, and Pbda2-1 in the 2-1 display area and the pixel circuit sections Prda2-2, Pgda2-2, and Pbda2-2 in the 2-2 display area are alternately arranged. However, according to the embodiment, they can be arranged in various ways.

[0202] In addition, Figure 10 In one embodiment, pixels are repeatedly arranged in units of three pixels. A unit pixel consists of a red pixel, a blue pixel, and a green pixel. However, according to another embodiment, it includes at least one red pixel, at least one green pixel, and at least one blue pixel.

[0203] In the second-2 display area, a portion of the pixel circuit sections Prda2-2, Pgda2-2, and Pbda2-2 is connected to a transparent connection wiring TCL1 for each pixel circuit section. One transparent connection wiring TCL1 is connected to an anode of the second-2 display area (transparent display area) DA2-2. The transparent connection wiring TCL1 extends in the first direction. At this time, refer to... Figure 11 The transparent connection wiring TCL1 can be located on the second organic film 180 and covered by the third organic film 181.

[0204] On the other hand, in the 2-2 display area, the remaining portion of the pixel circuit sections Prda2-2, Pgda2-2, and Pbda2-2 transmits light-emitting current using a small number of transparent connection wirings TCL2, including a transmission transistor (eighth transistor) T8. That is, in the 2-1 display area (intermediate display area) DA2-1, multiple pixel circuit sections are connected via a single transparent connection wiring TCL2, and this same transparent connection wiring TCL2 is also connected to multiple transmission transistors (eighth transistors) T8 in the 2-2 display area (transparent display area) DA2-2 to transmit light-emitting current to multiple anodes. Figure 10 The light-emitting control line 155 is not shown, but it extends in the first direction and is connected to the gate electrode of the transmission transistor (eighth transistor) T8. As a result, the light-emitting current can be transmitted to the anode of the conducting transmission transistor (eighth transistor) T8 by turning on the light-emitting control line 155 with a light-emitting signal applied to it.

[0205] exist Figure 10 In the transparent connection wiring TCL2, there is a first portion extending in a direction perpendicular to the extension direction (first direction) of the light-emitting control line 155 and located in the 2-1 display area DA2-1; a second portion extending in a direction perpendicular to the extension direction (first direction) of the light-emitting control line 155 and located in the 2-2 display area (transparent display area) DA2-2; and a connecting portion connecting the first portion and the second portion and forming a direction parallel to the extension direction (first direction) of the light-emitting control line 155. At this time, refer to... Figure 11 The transparent interconnect wiring TCL2 can be located above the second interlayer insulating film 162 and covered by the first organic film 163. That is, the two transparent interconnect wirings TCL1 and TCL2 can be located on different layers but intersect in the plan view.

[0206] The transmission transistor (eighth transistor) T8 can overlap with the anode of the second-second display area (transparent display area) DA2-2 on the plan view. The transparent connection wiring TCL2 is formed of transparent conductive material, so that the transparent area of ​​the second-second display area (transparent display area) DA2-2 can be maintained.

[0207] exist Figure 10 In the diagram, four anodes are shown connected using the transfer transistor (eighth transistor) T8, and eight anodes are shown not connected using the transfer transistor (eighth transistor) T8. However, whether or not to use the transfer transistor (eighth transistor) T8 can be considered in relation to the number of transparent wirings that can be formed within the area of ​​the 2-2 display area (transparent display area) DA2-2. When multiple connections are required through a single wiring, the connection is made using the transfer transistor (eighth transistor) T8. In this case, the number of anodes connected using the transfer transistor (eighth transistor) T8 can be less. However, according to the embodiment, it is also possible to... Figure 2 as well as Figure 3 In this case, the transfer transistor (eighth transistor) T8 is used to connect all or most of the anodes.

[0208] The following is through Figure 11 Observe again based on and Figure 8 as well as Figure 9 Cross-sectional structures of different embodiments.

[0209] Figure 11 This is a cross-sectional view showing the layered structure of the first display area and the second display area in a light-emitting display device according to an embodiment.

[0210] refer to Figure 11 ,and Figure 8 as well as Figure 9 Unlike other methods, a metal layer BML and a buffer layer 111 are disposed between the substrate 110 and the first semiconductor layer ACT. The metal layer BML can overlap with the channel of the transistor.

[0211] and Figure 8 as well as Figure 9 different, Figure 11 The cross-sectional structure includes two transparent connecting wires TCL1 and TCL2. One transparent connecting wire TCL1 is located on the second organic film 180 and is covered by the third organic film 181. The other transparent connecting wire TCL2 is located on the second interlayer insulating film 162 and is covered by the first organic film 163.

[0212] refer to Figure 11 The overall cross-sectional structure is observed with the layered structure of the silicon semiconductor transistor LTPS TFT and the oxide semiconductor transistor Oxide TFT, which serve as the transistors in the pixel circuit section, as the center.

[0213] exist Figure 11 In this process, the substrate 110 may contain a material with rigid properties, such as glass, that does not bend, or a flexible material that can be bent, such as plastic or polyimide.

[0214] A metal layer BML is disposed on the substrate 110, and the metal layer BML is located in the region overlapping the channel of the first semiconductor layer ACT. The metal layer BML, also known as the lower shielding layer, may contain metals or metal alloys such as copper (Cu), molybdenum (Mo), aluminum (Al), and titanium (Ti), and may be composed of a single layer or multiple layers.

[0215] A buffer layer 111 can be disposed on top of the metal layer BML to cover it. The buffer layer 111 serves to prevent impurity elements from penetrating into the first semiconductor layer, and may contain silicon oxide (SiO2). x ) or silicon nitride (SiN) x ), silicon oxynitride (SiON) x Inorganic insulating films such as )

[0216] A first semiconductor layer ACT is disposed on the buffer layer 111. The first semiconductor layer ACT includes a channel region and a first region and a second region located on both sides of the channel region.

[0217] The first gate insulating film 141 may be configured to cover the first semiconductor layer ACT or overlap only with the channel region of the first semiconductor layer ACT. The first gate insulating film 141 may contain silicon oxide (SiO2). x ) or silicon nitride (SiN) x ), silicon oxynitride (SiON) x Inorganic insulating films such as )

[0218] A first gate conductive layer GAT1 is disposed on the first gate insulating film 141. The first gate conductive layer GAT1 includes the gate electrode of a silicon semiconductor transistor LTPS TFT. The first gate conductive layer GAT1 may contain metals or metal alloys such as copper (Cu), molybdenum (Mo), aluminum (Al), and titanium (Ti), and may be composed of a single layer or multiple layers. The region of the first semiconductor layer ACT that overlaps with the gate electrode 124 on the plane may be a channel region.

[0219] The first gate conductive layer GAT1 is covered by the second gate insulating film 142. The second gate insulating film 142 may contain silicon oxide (SiO2). x ) or silicon nitride (SiN) x ), silicon oxynitride (SiON) x Inorganic insulating films such as )

[0220] A second gate conductive layer GAT2 is disposed on the second gate insulating film 142. The second gate conductive layer GAT2 includes a first holding electrode constituting the gate electrode and the holding capacitor, and a lower shielding layer for the oxide semiconductor transistor located below the oxide semiconductor layer ACT2. The second gate conductive layer GAT2 may contain metals or metal alloys such as copper (Cu), molybdenum (Mo), aluminum (Al), and titanium (Ti), and may be composed of a single layer or multiple layers.

[0221] The second gate conductive layer GAT2 is covered by a first interlayer insulating film 161, which may include silicon oxide (SiO2). x ) or silicon nitride (SiN) x ), silicon oxynitride (SiON) x Inorganic insulating films such as )

[0222] An oxide semiconductor layer ACT2 is disposed on the first interlayer insulating film 161. The oxide semiconductor layer ACT2 includes a channel region and a first region and a second region located on both sides of the channel region.

[0223] The oxide semiconductor layer ACT2 is covered by a third gate insulating film 143, which may include silicon oxide (SiO2). x ) or silicon nitride (SiN) x ), silicon oxynitride (SiON) x Inorganic insulating films such as )

[0224] The third gate insulating film 143 and the first interlayer insulating film 161 may have openings that overlap with a portion of the lower shielding layer for the oxide semiconductor transistor in the second gate conductive layer GAT2.

[0225] A third gate conductive layer GAT3 is disposed on the third gate insulating film 143. The third gate conductive layer GAT3 includes the gate electrode of the oxide semiconductor transistor and the connection component connected to the oxide semiconductor transistor by a lower shielding layer. The third gate conductive layer GAT3 may contain metals or metal alloys such as copper (Cu), molybdenum (Mo), aluminum (Al), and titanium (Ti), and may be composed of a single layer or multiple layers.

[0226] The third gate conductive layer GAT3 is covered by a second interlayer insulating film 162, which may include silicon oxide (SiO2). x ) or silicon nitride (SiN) x ), silicon oxynitride (SiON) x Inorganic insulating films such as those containing organic substances may include organic materials, according to embodiments.

[0227] The second interlayer insulating film 162 and the insulating film below it may include openings that overlap with the first semiconductor layer ACT and the oxide semiconductor layer ACT2.

[0228] A first data conductive layer SD1 is disposed on the second interlayer insulating film 162. The first data conductive layer SD1 may include connecting components, thereby providing voltage or current to the first semiconductor layer ACT and the oxide semiconductor layer ACT2, or transmitting voltage or current to other components. The first data conductive layer SD1 may contain metals or metal alloys such as aluminum (Al), copper (Cu), molybdenum (Mo), and titanium (Ti), and may be composed of a single layer or multiple layers.

[0229] Here, in Figure 11 In the light-emitting display device according to the embodiment, a transparent interconnect wiring TCL2 can be formed on the second interlayer insulating film 162. The transparent interconnect wiring TCL2 is formed of a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), or indium gallium zinc oxide (IGZO), and thus, although it is located on the same second interlayer insulating film 162, it can be formed using a mask separate from the first data conductive layer SD1. For example, in... Figure 10 As shown in the diagram, the transparent connection wiring TCL2 can be a wiring connecting the pixel circuit section located in the 2-1 display area (middle display area) DA2-1 and the transmission transistor (eighth transistor) T8 located in the 2-2 display area (transparent display area) DA2-2. The structure of the transmission transistor (eighth transistor) T8 can have... Figure 11 The cross-sectional structure of a silicon semiconductor transistor LTPS TFT.

[0230] The first data conductive layer SD1 and the transparent interconnect wiring TCL2 are covered by a first organic film 163. The first organic film 163 may be an organic insulating film containing organic materials, which may include one or more substances selected from the group consisting of polyimide, polyamide, acrylic resin, benzocyclobutene, and phenolic resin.

[0231] The first organic film 163 may include an opening overlapping the first data conductive layer SD1 and the transparent interconnect wiring TCL2, and a second data conductive layer SD2 is disposed on the first organic film 163. The second data conductive layer SD2 can be connected to the first data conductive layer SD1 or the transparent interconnect wiring TCL2 through the opening. The second data conductive layer SD2 may contain metals or metal alloys such as aluminum (Al), copper (Cu), molybdenum (Mo), and titanium (Ti), and may be composed of a single layer or multiple layers.

[0232] The second data conductive layer SD2 is covered by a second organic film 180. The second organic film 180 may be an organic insulating film, and may contain one or more substances selected from the group consisting of polyimide, polyamide, acrylic resin, benzocyclobutene, and phenolic resin.

[0233] A transparent interconnect wiring TCL1, formed of transparent conductive materials such as indium tin oxide (ITO), indium zinc oxide (IZO), and indium gallium zinc oxide (IGZO), is disposed on the second organic film 180. Figure 10 As in the example, the transparent connection wiring TCL1 can be a wiring that connects the pixel circuit section located in the 2-1 display area (intermediate display area) DA2-1 and the anode located in the 2-2 display area (transparent display area) DA2-2.

[0234] The transparent connection wiring TCL1 is covered by a third organic film 181. The third organic film 181 may be an organic insulating film, and may contain one or more substances selected from the group consisting of polyimide, polyamide, acrylic resin, benzocyclobutene, and phenolic resin.

[0235] An anode layer, Anode2-2, can be disposed on the third organic film 181, having a structure that connects to the second data conductive layer SD2 or the transparent connection wiring TCL1 through openings located in the third organic film 181 and / or the second organic film 180. The anode, located in the second-2 display area (transparent display area) DA2-2 and connected to the transparent connection wiring TCL2, can be electrically connected to the second data conductive layer SD2, which is electrically connected to the transparent connection wiring TCL2. The anode layer, Anode2-2, can be composed of a single layer including a transparent conductive oxide film and a metallic substance, or multiple layers including both. Transparent conductive oxide films can include indium tin oxide (ITO), poly-indium tin oxide (poly-ITO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), and indium tin zinc oxide (ITZO), etc. The metallic materials can include silver (Ag), molybdenum (Mo), copper (Cu), gold (Au), and aluminum (Al), etc.

[0236] A pixel defining layer 380 that exposes the anode and covers at least a portion of the anode may be disposed on the anode layer Anode and Ada2-2. The pixel defining layer (PDL) 380, also referred to as a bank, may be an organic insulating film containing one or more substances selected from the group consisting of polyimide, polyamide, acrylic resin, benzocyclobutene and phenolic resin. In addition, according to embodiments, the pixel defining layer 380 may be formed of black PDL (Pixel Defining Layer) having a black color.

[0237] In the foregoing, with use of Figure 10 and Figure 11 , an embodiment using two transparent connection wires TCL1 and TCL2 has been described.

[0238] Hereinafter, through Figures 12 to 14 , an embodiment including a plurality of light emitting elements to which the same light emitting current is applied (hereinafter also referred to as duplicated light emitting elements) will be described.

[0239] First, through Figure 12 , a modified embodiment of Figure 10 will be described.

[0240] Figure 12 is a configuration diagram showing a second display region in a light emitting display device according to an embodiment.

[0241] Figure 12 The embodiment of Figure 10 additionally further includes a transparent connection wire TCL3 and duplicated anodes Arda2-1c, Agda2-1c, Abda2-1c, Arda2-2c, Agda2-2c, Abda2-2c connected thereto. The duplicated anodes Arda2-1c, Agda2-1c, Abda2-1c, Arda2-2c, Agda2-2c, Abda2-2c are in Figure 12 represented by c.

[0242] The original anodes Arda2-1, Agda2-1, Abda2-1, Arda2-2, Agda2-2, and Abda2-2 are anodes to which luminous current is directly applied from the pixel circuit sections Prda2-1, Prda2-2, Pgda2-1, Pgda2-2, Pbda2-1, and Pbda2-2. The transparent connection wiring TCL3 transmits the same luminous current from the original anodes Arda2-1, Agda2-1, Abda2-1, Arda2-2, Agda2-2, and Abda2-2 or the pixel circuit sections Prda2-1, Prda2-2, Pgda2-1, Pgda2-2, Pbda2-1, and Pbda2-2 to the replica anodes Arda2-1c, Agda2-1c, Abda2-1c, Arda2-2c, Agda2-2c, and Abda2-2c.

[0243] The light-emitting elements, including the replica anodes Arda2-1c, Agda2-1c, Abda2-1c, Arda2-2c, Agda2-2c, and Abda2-2c, are replica light-emitting elements. They receive the same light-emitting current and emit light of the same brightness as the original light-emitting elements, including the original anodes Arda2-1, Agda2-1, Abda2-1, Arda2-2, Agda2-2, and Abda2-2.

[0244] Such a replicated light-emitting element can be formed in the 2-1 display area (intermediate display area) DA2-1 and the 2-2 display area (transparent display area) DA2-2, resulting in an effect where the number of pixels appears larger. In particular, it has the advantage that the number of pixels in the second display area, which has a reduced number of pixels compared to the first display area (general display area) DA1, appears to be greater than that in the first display area (general display area) DA1. A replicated light-emitting element may not be formed in the first display area (general display area) DA1.

[0245] The replicated anodes Arda2-1c, Agda2-1c, and Abda2-1c formed in the 2-1 display area (middle display area) DA2-1 are connected to the original anodes Arda2-1, Agda2-1, and Abda2-1 through transparent connection wiring TCL3.

[0246] On the other hand, the replica anodes Arda2-2c, Agda2-2c, and Abda2-2c located in the 2-2 display area (transparent display area) DA2-2 are connected to the original anodes Arda2-2, Agda2-2, and Abda2-2 through transparent connection wiring TCL1 and TCL2.

[0247] The replica anodes Arda2-2c, Agda2-2c, and Abda2-2c located in the 2-2 display area (transparent display area) DA2-2 are divided into two cases: one without the transmission transistor (eighth transistor) T8 and connected to the anode receiving the light-emitting current only through the transparent connection wiring TCL1; and the other using the transmission transistor (eighth transistor) T8 and the transparent connection wiring TCL2 to connect to the anode receiving the light-emitting current.

[0248] exist Figure 12 In this process, due to the replication of anodes Arda2-2c, Agda2-2c, and Abda2-2c, the vertical spacing between pixel circuit sections Prda2-1, Prda2-2, Pgda2-1, Pgda2-2, Pbda2-1, and Pbda2-2 can be compared to... Figure 10 The implementation examples are large. Although in Figure 12 The embodiments are not illustrated, but wiring can be provided in the portion that overlaps with the replicated anodes Arda2-2c, Agda2-2c, and Abda2-2c in the plan view.

[0249] The following is through Figure 13 ,observe Figure 12 The cross-sectional structure of the structure.

[0250] Figure 13 This is a cross-sectional view showing the layered structure of the first display area and the second display area in a light-emitting display device according to an embodiment.

[0251] exist Figure 13 In the cross-sectional structure, the structure from the metal layer BML to the pixel defining film 380 can be related to... Figure 10 The structures are essentially the same.

[0252] exist Figure 13 In, with Figure 10 Unlike other examples, in which substrate 110 is composed of multiple layers, this embodiment shows a substrate that can be flexible. That is, as... Figure 13 As in the embodiments described, the flexible substrate 110 can have a double-layered structure of polyimide layer and barrier layer repeated multiple times. Figure 13 It has a structure in which a polyimide layer and a barrier layer are repeatedly formed twice.

[0253] In addition, Figure 13 In the embodiments, with Figure 10 The embodiments differ from those shown, with the third gate conductive layer GAT3 having a double-layer structure.

[0254] exist Figure 13The additional replica anodes Arda2-1c, Agda2-1c, Abda2-1c, Arda2-2c, Agda2-2c, and Abda2-2c formed in the same layer as the other anodes Anode and Ada2-2 are formed from the same material.

[0255] On the other hand, Figure 13 In this process, the additional transparent connection wiring TCL3 is located on the upper layer than other transparent connection wirings TCL1 and TCL2, and also on the upper layer than the anode Anode and Ada2-2.

[0256] refer to Figure 13 Spacers 385 are disposed on the pixel defining film 380. The spacers 385 may be an organic insulating film comprising one or more substances selected from the group consisting of polyimide, polyamide, acrylic resin, benzocyclobutene, and phenolic resin. Alternatively, according to an embodiment, they may be formed together with the pixel defining film 380 from the same substance as the pixel defining film 380. Furthermore, according to an embodiment, the spacers 385 may also be formed from a black organic substance, as in the pixel defining film 380.

[0257] A transparent interconnect wiring TCL3 is disposed on the spacer 385 and the pixel defining film 380. The transparent interconnect wiring TCL3 may be formed by comprising indium tin oxide (ITO), polyindium tin oxide (poly-ITO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), and indium tin zinc oxide (ITZO), etc.

[0258] according to Figure 13 The transparent connection wiring TCL3 has a structure that is directly connected to the anode Anode and Ada2-2 exposed through the opening formed in the pixel defining film 380.

[0259] An emitting layer (EL) and a cathode (Cathod) can be sequentially formed on the anode (Anode), Ada2-2, spacer 385, pixel defining film 380, and transparent interconnect wiring TCL3. The EL and Cathod can be formed throughout the entire area; in such an embodiment, the EL can emit light of the same color (e.g., white). Alternatively, according to an embodiment, the EL can be located only above the anode (Anode) and Ada2-2 exposed only within the opening formed in the pixel defining film 380. In such an embodiment, each EL can emit light of a different color than the others.

[0260] The light-emitting layer (EL) may also include auxiliary layers such as an electron injection layer, an electron transport layer, a hole transport layer, and a hole injection layer. For example, the hole injection layer and the hole transport layer may be disposed below the light-emitting layer (EL), and the electron transport layer and the electron injection layer may be disposed above the light-emitting layer (EL).

[0261] The cathode can be formed from a transparent electrode or a reflective electrode. According to embodiments, the cathode can be a transparent or semi-transparent electrode, formed from a thin metal film with a low work function containing lithium (Li), calcium (Ca), lithium fluoride / calcium (LiF / Ca), lithium fluoride / aluminum (LiF / Al), aluminum (Al), silver (Ag), magnesium (Mg), and their compounds. Furthermore, a transparent conductive oxide (TCO) film, such as indium-tin oxide (ITO), indium-zinc oxide (IZO), zinc oxide (ZnO), or indium oxide (In₂O₃), can be disposed on the metal film. The cathode can be integrally formed across the entire display area DA, thereby being positioned above the light-emitting layer EL and the pixel defining film 380. Additionally, the cathode can have semi-transparent properties, in which case it can form a microcavity together with the anode and Ada₂-₂. Based on the microcavity structure, the spacing and characteristics between the two electrodes allow light of a specific wavelength to be emitted upwards, resulting in the display of red, green, or blue.

[0262] An encapsulation layer 400 is disposed above the cathode. The encapsulation layer 400 includes at least one inorganic film and at least one organic film, and according to an embodiment, may have a three-layer structure including a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer. The encapsulation layer 400 can be used to protect the light-emitting element LED from the influence of moisture or oxygen that may enter from the outside. According to an embodiment, the encapsulation layer 400 may include a structure in which inorganic layers and organic layers are further stacked sequentially.

[0263] Above the encapsulation layer 400, for touch sensing, a sensing insulating layer 510, multiple sensing electrodes 540 and 541, and an inorganic protective film 501 are provided. Figure 13 In one embodiment, two sensing electrodes 540 and 541 can be used to sense touch in a capacitive manner.

[0264] An inorganic protective film 501 is formed on the encapsulation layer 400, and a plurality of sensing electrodes 540, 541 are formed on the protective film. The plurality of sensing electrodes 540, 541 are insulated from the sensing insulating layer 510, and some of them can be electrically connected through openings in the sensing insulating layer 510. Here, the sensing electrodes 540, 541 can contain metals or metal alloys such as aluminum (Al), copper (Cu), silver (Ag), gold (Au), molybdenum (Mo), titanium (Ti), and tantalum (Ta), and can be composed of a single layer or multiple layers.

[0265] A light-shielding component 220 and a color filter layer 230 are disposed on the sensing electrode 541 above it.

[0266] The light-shielding component 220 can be configured to overlap with the sensing electrodes 540 and 541 on a plane, and can be configured not to overlap with the anodes Anode and Ada2-2 on a plane. This is to ensure that the anodes Anode and Ada2-2, which are capable of displaying images, are not blocked by the light-shielding component 220 and the sensing electrodes 540 and 541.

[0267] A color filter layer 230 is disposed on the sensing insulating layer 510 and the light-shielding component 220. The color filter layer 230 includes a red color filter that transmits red light, a green color filter that transmits green light, and a blue color filter that transmits blue light. Each color filter 230 can be configured to overlap with the anode and anode 2-2 of the light-emitting element in a plane. Light emitted from the light-emitting layer EL can be changed to the corresponding color while passing through the color filter and emitted simultaneously.

[0268] The light-shielding component 220 may be located between the various color filters 230. According to an embodiment, the color filter layer 230 may be replaced by a color conversion layer, or may further include a color conversion layer. The color conversion layer may contain quantum dots.

[0269] A first planarization layer 550 is provided above the color filter layer 230, covering the color filter layer 230. A low-refractive-index layer 560 and a second planarization layer 570 may be provided above the first planarization layer 550 to improve the frontal visibility and light emission efficiency of the display device. The low-refractive-index layer 560 includes an opening and is entirely covered by the second planarization layer 570. The first planarization layer 550 and the second planarization layer 570 are used to planarize the top surface of the light-emitting display device. The first planarization layer 550 and the second planarization layer 570 may be organic insulating films containing one or more substances selected from the group consisting of polyimide, polyamide, acrylic resin, benzocyclobutene, and phenolic resin. Additionally, the second planarization layer 570 may contain a substance with a high refractive index. On the other hand, the low-refractive-index layer 560 may comprise a light-transmitting organic insulating material with a low refractive index. Examples include acrylic resin, polyimide resin, polyamide resin, and at least one of tris(8-hydroxyquinolinato)aluminium (Alq3). The low-refractive-index layer 560 may have a relatively smaller refractive index than the second planarization layer 570. For example, the low-refractive-index layer 560 may have a refractive index of 1.40 to 1.59, and the second planarization layer 570 may have a refractive index of 1.60 to 1.80. With this structure of the low-refractive-index layer 560 and the second planarization layer 570, at least a portion of the light generated from the light-emitting layer EL undergoes total internal reflection at the interface between the low-refractive-index layer 560 and the second planarization layer 570, thereby enabling the light to be focused forward.

[0270] Based on the like Figure 13 If such a structure is illustrated sequentially using a mask etching process, it can be shown as follows: Figure 14 .

[0271] Figure 14 The figure illustrates the manufacturing steps of a light-emitting display device according to one embodiment and variations thereof.

[0272] exist Figure 14 In the diagram, the manufacturing process sequence in the first display area (general display area) DA1 is generally shown on the left, while the process for additionally forming transparent interconnect wirings TCL1, TCL2, and TCL3 is additionally shown on the right. On the left, the numbers recorded in each step are the numbers of the masks used when forming the first display area (general display area) DA1. When the first display area (general display area) DA1 is formed to the spacer, a total of 16 masks can be used for formation.

[0273] On the other hand, Figure 14The diagram shows that the process sequence of transparent connection wiring TCL1 and TCL3 is fixed, but the process sequence of transparent connection wiring TCL2 can be changed in various ways. However, according to an embodiment, the process sequence of transparent connection wiring TCL1 and TCL3 can also be one of the process sequences of transparent connection wiring TCL2.

[0274] according to Figure 14In the first display area (general display area) DA1, a metal layer BML is formed on the substrate 110 using a first mask. After forming a buffer layer 111 on the metal layer BML, a first semiconductor layer ACT is formed on it using a second mask. After forming a first gate insulating film 141 on the first semiconductor layer ACT, a first gate conductive layer GAT1 is formed using a third mask. A second gate insulating film 142 is formed on the first gate conductive layer GAT1, and then a second gate conductive layer GAT2 is formed using a fourth mask. After forming a first interlayer insulating film 161 on the second gate conductive layer GAT2, an oxide semiconductor layer ACT2 is formed using a fifth mask. After forming a third gate insulating film 143 on the oxide semiconductor layer ACT2, an opening GCNT is formed in the third gate insulating film 143 and the first interlayer insulating film 161 using a sixth mask. Then, a third gate conductive layer GAT3 is formed on the third gate insulating film 143 using a seventh mask. The third gate conductive layer GAT3 includes a connection component that connects to the lower shielding layer of the oxide semiconductor transistor through an opening GCNT formed in the third gate insulating film 143 and the first interlayer insulating film 161. After forming the second interlayer insulating film 162 on the third gate conductive layer GAT3, openings PCNT and OCNT are formed using an eighth mask and a ninth mask. Alternatively, the first semiconductor layer ACT may be exposed by forming an opening PCNT in the second interlayer insulating film 162, the third gate insulating film 143, the first interlayer insulating film 161, the second gate insulating film 142, and the first gate insulating film 141 through the eighth mask, and the oxide semiconductor layer ACT2 may be exposed by forming an opening OCNT in the second interlayer insulating film 162 and the third gate insulating film 143 through the ninth mask. A first data conductive layer SD1 is formed on the second interlayer insulating film 162 using a tenth mask. The first data conductive layer SD1 may also include a portion connected to the first semiconductor layer ACT through the opening PCNT and a portion connected to the oxide semiconductor layer ACT2 through the opening OCNT. A first organic film 163 is formed on the first data conductive layer SD1. Then, an opening CNT is formed in the first organic film 163 using an eleventh mask. A second data conductive layer SD2 is formed on the first organic film 163 using a twelfth mask. The second data conductive layer SD2 includes a portion connected to the first data conductive layer SD1 through the opening CNT formed in the first organic film 163. The second data conductive layer SD2 forms a second organic film 180. Then, an opening CNT is formed in the second organic film 180 using a thirteenth mask. An anode layer Anode is formed on the second organic film 180 using a fourteenth mask. The anode layer Anode is connected to the second data conductive layer SD2 in the second organic film 180 through the opening CNT. A pixel defining film 380 is formed on the second organic film 180 using a fifteenth mask.Next, a spacer (SPC) 385 is formed on the pixel defining layer (BPDL) 380 using a sixteenth mask. The light-emitting layer EL and the cathode formed thereon can be formed over the entire area without a mask.

[0275] Figure 12 as well as Figure 13 In addition to the pixel circuit section and light-emitting element structure of the first display area (general display area) DA1 as described above, the second display area DA2 also additionally forms three transparent connecting wires TCL1, TCL2, and TCL3.

[0276] exist Figure 12 as well as Figure 13 In one embodiment, the bottommost transparent interconnect wiring TCL2 can be formed on the second interlayer insulating film 162 using a separate mask. The transparent interconnect wiring TCL2 is formed of a transparent conductive material and, although located on the same layer as the first data conductive layer SD1 above the second interlayer insulating film 162, is formed using a separate mask. Figure 14 The transparent interconnect wiring TCL2 can be formed in one of the steps from the formation of the second gate conductive layer GAT2 to the formation of the first data conductive layer SD1.

[0277] On the other hand, Figure 12 as well as Figure 13 In this embodiment, the transparent interconnect wiring TCL1 located in the middle is formed using a separate mask, and is formed after the opening CNT is formed using a thirteenth mask and before the anode layer is formed using a fourteenth mask. That is, the transparent interconnect wiring TCL1 is formed over the second organic film 180 through a mask, and then a third organic film 181 covering the transparent interconnect wiring TCL1 is formed, and the opening CNT is formed on the third organic film 181 using an additional mask. Afterwards, the anode layer is formed.

[0278] On the other hand, Figure 12 as well as Figure 13 In one embodiment, the topmost transparent interconnect wiring TCL3 is formed using a separate mask after the spacer (SPC) 385 is formed.

[0279] If three transparent connection traces TCL1, TCL2, and TCL3 are formed in this way, a total of four masks may be required. Furthermore, according to the embodiment, the vertical positional relationship of the three transparent connection traces TCL1, TCL2, and TCL3 can also be... Figure 14 They are located on different layers because they are different.

[0280] According to the embodiment, when the transparent connection wiring that connects the transmission transistor (eighth transistor) T8 to the pixel circuit sections Prda2-2, Pgda2-2, and Pbda2-2 in the transparent display area is called the first transparent connection wiring, and the transparent connection wiring that directly connects the anode and the pixel circuit sections Prda2-2, Pgda2-2, and Pbda2-2 in the transparent display area without the transmission transistor (eighth transistor) T8 is called the second transparent connection wiring, the second transparent connection wiring can be formed closer to the substrate 110 than the first transparent connection wiring.

[0281] Furthermore, if the transparent connection wiring connected to the replicated anodes Arda2-1c, Agda2-1c, Abda2-1c, Arda2-2c, Agda2-2c, and Abda2-2c is referred to as the third transparent connection wiring, then the third transparent connection wiring can be formed to be farther away from the substrate 110 than the first transparent connection wiring and the second transparent connection wiring.

[0282] Additionally, refer to Figure 14 The first transparent connection wiring can be set in the process of manufacturing transistors including the pixel circuits Prda2-2, Pgda2-2, and Pbda2-2 in the transparent display area, or after manufacturing the transistors and before the next process.

[0283] The following is through Figure 15 Observation can compare Figure 2 In some embodiments, more light-emitting elements are formed in the display area DA.

[0284] Figure 15 This is a magnified and simplified diagram showing the first display area and the second display area in a light-emitting display device according to one embodiment.

[0285] Figure 15 yes Figure 2 The variant example has a higher degree of variation than in Figure 2 The number of pixel circuit sections Prda2-1, Prda2-2, Pgda2-1, Pgda2-2, Pbda2-1, and Pbda2-2 located in the 2-1 display area (middle display area) DA2-1 is more than twice the number of pixel circuit sections Prda2-1, Prda2-2, Pgda2-1, Pgda2-2, Pbda2-1, and Pbda2-2. Figure 15 Compared to the embodiments Figure 2 In the embodiment, the number of pixel circuit sections Prda2-1, Pgda2-1, and Pbda2-1 for the 2-1 display area and the number of pixel circuit sections Prda2-2, Pgda2-2, and Pbda2-2 for the 2-2 display area are also doubled.

[0286] exist Figure 15 In the embodiment, the number of the transmission transistor (eighth transistor) T8 connected to a transparent connection wiring TCL1 and the anodes Arda2-2, Agda2-2, and Abda2-2 can also be compared to Figure 2 The embodiment is twice as good.

[0287] The PPI (Pixel Per Inch) value of the pixels located in the second display area DA2 is formed to be smaller than the PPI value of the pixels formed in the first display area DA1. Figure 15 The PPI value of the embodiment can also be greater than Figure 2 The PPI value of the embodiment.

[0288] To address this, we have compiled the information into a table, as shown in Table 1 below.

[0289] [Table 1]

[0290]

[0291]

[0292] Table 1 describes the following: Figure 2 as well as Figure 15 In the embodiments, the relationship between the light-emitting elements formed in the first display area DA1 and the light-emitting elements formed in the second-second display area DA2-2 is described. The first direction and the second direction represent the relationship between the number of pixels (pixel circuit sections or light-emitting elements) in the corresponding directions. The number of pixels represents the relationship between the number of pixels (pixel circuit sections or light-emitting elements) in a given area, and PPI represents the number of pixels per inch. Specifically, regarding the first direction, the second direction, and the number of pixels, when the number of light-emitting elements formed in the first display area DA1 is considered to be 1, it is described in… Figure 2 Implementation examples and Figure 15 The ratio of the number of light-emitting elements formed in the 2-2 display area DA2-2 in the embodiment.

[0293] First of all, Figure 2 In this embodiment, the number of light-emitting elements formed in the second-2 display area DA2-2 is reduced to half in both the first and second directions. Therefore, the number of light-emitting elements formed in the second-2 display area DA2-2 per unit area has a 1 / 4 value. Consequently, the PPI value is half the PPI value of the first display area DA1.

[0294] On the other hand, Figure 15In this embodiment, the number of light-emitting devices formed in the second-2 display area DA2-2 is reduced to half only in the first direction; therefore, the number of light-emitting elements formed in the second-2 display area DA2-2 per unit area has a value of 1 / 2. Consequently, the PPI value has the same value as the PPI value of the first display area DA1. Figure 2 The values ​​between the PPI values ​​in the 2-2 display area DA2-2 of the embodiment.

[0295] The light-emitting element formed in the second-second display area DA2-2 of the present invention is connected to multiple transmission transistors (eighth transistors) T8 and anodes through a transparent connection wiring TCL1, which can reduce the number of wirings connected to the anodes of the second-second display area DA2-2, thereby enabling more anodes to be formed in the second-second display area DA2-2.

[0296] On the other hand, the light emission signal applied to the transmission transistor (eighth transistor) T8 through a transparent connection wiring TCL1 via the light emission control line 155 does not simultaneously turn on the transmission transistor (eighth transistor) T8, thereby enabling the light emission signal to be applied without overlapping each other.

[0297] Additionally, in Figure 2 as well as Figure 15 In some embodiments, it is also possible to... Figure 10 That way, a replica anode or a replica light-emitting element can be added.

[0298] The following is through Figure 16 as well as Figure 17 The overall structure of the display device includes the display panel as shown above.

[0299] Figure 16 This is an exploded perspective view of a light-emitting display device according to one embodiment. Figure 17 This is a simplified cross-sectional view of a light-emitting display device according to one embodiment.

[0300] Reference Figure 16 as well as Figure 17 The display device 1000 displays an image facing a third direction DR3 on a plane defined by a first direction DR1 and a second direction DR2. The front (or top) and back (or bottom) of each component are divided by the third direction DR3. The directions indicated by the first to third directions DR1, DR2, and DR3 are relative concepts and can be changed to other directions.

[0301] The display device 1000 includes a cover window WU, a display panel DP, and a housing component HM. In this embodiment, the cover window WU, the display panel DP, and the housing component HM can be combined to form the display device 1000.

[0302] A cover window (WU) is disposed on the display panel (DP) to protect the display panel (DP). The cover window (WU) may include a transmissive area (TA) and a blocking area (BA). The transmissive area (TA) may be an optically transparent area that allows incident light to pass through. The blocking area (BA) may be an area with relatively low light transmittance compared to the transmissive area (TA). The blocking area (BA) defines the shape of the transmissive area (TA). The blocking area (BA) may surround the transmissive area (TA). The blocking area (BA) may be of a predetermined color. The blocking area (BA) may overlap with the non-display area (PA) of the display panel (DP) to prevent the non-display area (PA) from being identified from the outside.

[0303] The display panel DP can be a flat, rigid display panel, or it can be a flexible display panel, but is not limited to this. According to one embodiment of the present invention, the display panel DP can be a light-emitting display panel, and is not particularly limited thereto. For example, the display panel DP can be an organic light-emitting display panel or a quantum dot light-emitting display panel. The light-emitting layer of an organic light-emitting display panel can contain organic light-emitting materials. The light-emitting layer of a quantum dot light-emitting display panel can contain quantum dots and quantum rods, etc. Hereinafter, the display panel DP will be described as an organic light-emitting display panel.

[0304] The display panel (DP) displays the image in front of it. The front of the display panel (DP) includes a display area (DA) and a non-display area (PA). The image is displayed in the display area (DA). The non-display area (PA) may surround the display area (DA).

[0305] A display panel (DP) can include multiple pixels located in the display area (DA). Pixels can display light in response to electrical signals. The light displayed by a pixel can create an image. The number of transistors and capacitors included in a pixel, as well as their interconnections, can be varied.

[0306] According to one embodiment, the display panel DP may include a first display area DA1 and a second display area DA2. The second display area DA2, as a portion capable of performing functions other than the inherent function of displaying an image, may include a second-first display area DA2-1 and a second-second display area DA2-2. The second-second display area DA2-2 may overlap with the optical device OS and has high light transmittance. The second-first display area DA2-1 may be located on both sides of the first direction DR1 with reference to the second-second display area DA2-2. Here, light transmittance refers to the transmittance of light transmitted through the display panel DP to the third direction DR3. The light may be visible light and / or light of wavelengths other than visible light (e.g., infrared light).

[0307] Within the display area DA, the second display area DA2 can be configured in various ways. In the illustrated embodiment, the second display area DA2 is located within and surrounded by the first display area DA1. The second display area DA2 can be positioned in contact with the non-display area PA, for example, by being divided into two or more areas at the upper end, left side, right side, and / or center of the display area DA. The second display area DA2 can have various shapes such as quadrilaterals, triangles, polygons, circles, and ellipses.

[0308] The display panel DP includes a non-display area PA that extends from the display area DA and has multiple signal lines and pads. A data driver unit 50 may be disposed in the non-display area PA. According to one embodiment, the pads of the non-display area PA may be electrically connected to a printed circuit board PCB that includes a driver chip 80.

[0309] like Figure 2 As shown, an adhesive layer AD can be provided between the display panel DP and the cover window WU to bond the display panel DP and the cover window WU. On the other hand, although not shown in this specification, a touch unit located between the display panel DP and the cover window WU may also be included. The touch unit can be disposed on the display panel DP for the touch screen function of the display device 1000. The touch unit can be integrally formed on the display panel DP. The touch unit can include touch electrodes of various patterns, such as resistive film or capacitive electrodes.

[0310] Refer again Figure 1 The optical device OS includes various functional modules for enabling the display device 1000 to operate. The optical device OS can be electrically connected to the display panel DP via a connector (not shown). For example, the optical device OS can be a camera or an optical sensor.

[0311] As an example, the optical device OS can sense an external subject received through the second-second display area DA2-2 of the display panel DP and the transmission area TA of the covering window WU. The optical device OS can receive external input transmitted through the second-second display area DA2-2 and the transmission area TA, or provide output through the second-second display area DA2-2 and the transmission area TA.

[0312] For example, the optical device OS can be at least one of a light-emitting module, a light-sensing module, and a camera module. For example, the optical device OS can include at least one of a light-emitting module that outputs infrared light, a CMOS (complementary metal-oxide-semiconductor) sensor for infrared light sensing, and a camera module for capturing images of external objects.

[0313] The housing component HM is disposed on the underside of the display panel DP. The housing component HM, together with the cover window WU, constitutes the appearance of the display device 1000. The housing component HM may contain a material with relatively high rigidity. For example, the housing component HM may include multiple frames and / or plates made of glass, plastic, or metal.

[0314] The housing component HM provides a predetermined housing space. The display panel DP can be housed within this housing space and protected from external impacts.

[0315] The embodiments of the present invention have been described in detail above, but the scope of the present invention is not limited thereto. Various modifications and improvements made by those skilled in the art using the basic concepts of the present invention as defined in the claims also fall within the scope of the present invention.

Claims

1. A light-emitting display device, wherein, include: Display panel, including the display area. The display area of ​​the display panel includes: Transparent display area; A central display area, located on one or both sides along a first direction from the transparent display area, and including pixel circuitry for the transparent display area; and General display area, The transparent display area includes: First anode; and The transmission transistor transmits the light-emitting current output from the pixel circuit section of the transparent display area to the first anode. The wiring connecting the transmission transistor in the pixel circuit section of the transparent display area is a first transparent connection wiring containing a transparent conductive material. A first transparent connection wiring connects the pixel circuit sections of the plurality of transparent display areas and the plurality of transmission transistors. The first transparent connection wiring includes a first part, a second part, and a connection portion connecting the first part and the second part. The first part is located in the intermediate display area and is connected to the plurality of transparent display areas by pixel circuitry. The second part is located in the transparent display area and is connected to the plurality of the transmission transistors.

2. The light-emitting display device according to claim 1, wherein, The connecting portion extends in a first direction to connect the first portion and the second portion. The first portion and the second portion extend in a second direction perpendicular to the first direction. The first part, the second part, and the connecting part are integrally formed from the same transparent conductive material.

3. The light-emitting display device according to claim 1, wherein, The intermediate display area also includes: The central display area uses a pixel circuit section; and The anode receives the light-emitting current from the pixel circuit section of the intermediate display area and is located in the intermediate display area.

4. The light-emitting display device according to claim 3, wherein, The pixel circuit section for the transparent display area and the pixel circuit section for the intermediate display area have the same structure.

5. The light-emitting display device according to claim 3, wherein, The pixel circuit section for the intermediate display area includes: Drive transistors; and The output control transistor receives and outputs the light-emitting current of the driving transistor. The gate electrode of the output control transistor is connected to the light-emitting control line. The gate electrode of the transmission transistor is connected to the light-emitting control line.

6. The light-emitting display device according to claim 3, wherein, The general display area includes: The pixel circuit section is used in the general display area; and The anode receives the light-emitting current from the pixel circuit section of the general display area and is located in the intermediate display area.

7. The light-emitting display device according to claim 6, wherein, The pixel circuit section for the general display area includes: Drive transistors; and The output control transistor receives and outputs the light-emitting current of the driving transistor. The gate electrode of the output control transistor is connected to the light-emitting control line. The gate electrode of the transmission transistor is connected to the light-emitting control line.

8. The light-emitting display device according to claim 1, wherein, The transparent display area further includes a second anode, which bypasses the transmission transistor and directly receives the luminous current from the pixel circuit section of the transparent display area. The second anode and the transparent display area are connected by a pixel circuit section via a second transparent connection wiring containing a transparent conductive material. The first transparent connection wiring is formed closer to the substrate than the second transparent connection wiring.

9. The light-emitting display device according to claim 8, wherein, The second display area, including the transparent display area and the intermediate display area, further includes: a replica anode, electrically connected to the first anode or the second anode. The first anode or the second anode is connected to the replicated anode via a third transparent connection wiring containing a transparent conductive material. The third transparent connection wiring is formed to be farther away from the substrate than the first transparent connection wiring and the second transparent connection wiring.

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