Substrate processing apparatus, system, and method, and computer storage medium

Abstract

The present disclosure relates to a substrate processing apparatus, system, and method, and a computer storage medium, which suppresses occurrence of a bump and an erosion of a coating film in an EBR (Edge Coating Film Removal) process. The substrate processing apparatus includes a substrate holding section that holds a substrate on which a coating film for pattern formation is formed and rotates the substrate; a processing liquid ejecting section that ejects a processing liquid for forming a protective film toward the substrate held by the substrate holding section; a laser irradiating section that irradiates a laser toward a peripheral edge section of the substrate on which the protective film is formed; and a removal liquid ejecting section that ejects a removal liquid for removing the protective film toward the protective film.

Description

Technical Field

[0001] This disclosure relates to a substrate processing apparatus, a substrate processing system, a substrate processing method, and a computer storage medium. Background Technology

[0002] Patent Document 1 discloses a substrate processing apparatus comprising: a rotation unit for rotating a substrate about a rotation axis perpendicular to the main surface of the substrate; a light source for outputting a laser beam; a beam splitting unit for splitting the laser beam to generate a first beam and a second beam, the beam splitting unit being capable of changing the power ratio of the first beam and the second beam; a first optical path adjustment unit for changing the travel direction of the first beam so that the first beam is incident on the periphery of the substrate along a first incident direction, the first incident direction having a component of a direction from the first main surface of the substrate toward a second main surface on a side opposite to the first main surface; and a second optical path adjustment unit for changing the travel direction of the second beam so that the second beam is incident on the periphery of the substrate along a second incident direction, the second incident direction having a component of a direction from the second main surface toward the first main surface.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2016-115893 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] The technology disclosed herein suppresses coating film bulging and erosion during EBR (edge ​​coating removal) processing of substrates.

[0008] Solution for solving the problem

[0009] One aspect of this disclosure is a substrate processing apparatus comprising: a substrate holding section that holds and rotates a substrate on which a pattern-forming coating film is formed; a processing liquid ejection section that ejects a processing liquid for forming a protective film onto the substrate held in the substrate holding section; a laser irradiation section that irradiates a peripheral portion of the substrate on which the protective film is formed with a laser; and a removal liquid ejection section that ejects a removal liquid for removing the protective film onto the protective film.

[0010] The effects of the invention

[0011] According to this disclosure, it is possible to suppress the bulging and erosion of the coating film during the EBR (edge ​​coating removal) process of the substrate. Attached Figure Description

[0012] Figure 1 This is a top view schematically showing the outline of the structure of the substrate processing system according to the first embodiment.

[0013] Figure 2 It is a schematic representation Figure 1 A front view outlining the structure of the substrate processing system.

[0014] Figure 3 It is a schematic representation Figure 1 A rear view showing the outline of the substrate processing system.

[0015] Figure 4 This is a side cross-sectional view schematically showing the outline of the structure of the substrate processing apparatus according to the first embodiment.

[0016] Figure 5 This is a top view used to illustrate the laser irradiation section, the treatment liquid ejection section, and the removal liquid ejection section.

[0017] Figure 6 This is a diagram illustrating the substrate processing flow according to the first embodiment.

[0018] Figure 7 It means according to Figure 6 The diagram illustrates the operation of the laser irradiation section, the processing liquid ejection section, and the removal liquid ejection section during substrate processing.

[0019] Figure 8 This is an enlarged view of the periphery of a substrate used to illustrate a laser irradiation method.

[0020] Figure 9 This is a side cross-sectional view schematically showing the outline of the structure of the substrate processing apparatus according to the second embodiment.

[0021] Figure 10 This is a front view schematically showing the outline of the structure of the substrate processing system according to the second embodiment.

[0022] Figure 11 This is a diagram illustrating the substrate processing flow according to the second embodiment.

[0023] Figure 12 This is a diagram illustrating other substrate processing flows involved in the second embodiment.

[0024] Figure 13 This is a side cross-sectional view schematically showing the outline of the structure of the substrate processing apparatus according to the third embodiment.

[0025] Figure 14 This is a diagram illustrating the substrate processing flow according to the third embodiment.

[0026] Figure 15 is an explanatory view showing the state of the coating film on the substrate when substrate processing is performed according to Figure 14 the procedure Detailed Description of the Embodiments

[0027] In the manufacturing process of semiconductor devices and the like, there is a step of forming a resist film as a coating film for pattern formation on the surface of a substrate such as a semiconductor wafer (hereinafter sometimes referred to as "wafer"). In this step, a process of ejecting a solvent such as a diluent to the peripheral portion of the wafer on which the resist film is formed to remove the unnecessary resist film at the peripheral portion of the wafer, that is, a so-called edge bead removal process (hereinafter sometimes referred to as "EBR process") is performed.

[0028] When the EBR process is performed using a solvent such as a diluent, the solvent removes the unnecessary resist film, but on the other hand, the resist film required for pattern formation may be raised (hereinafter referred to as "bulging") or eroded, deforming the shape of the peripheral portion of the resist film for pattern formation. When such shape deformation of the resist film occurs, there is a concern that defects such as pattern abnormality may be caused in subsequent steps.

[0029] Accordingly, the technique according to the present disclosure suppresses the occurrence of bulging and erosion of the coating film during the EBR process of the substrate.

[0030] Hereinafter, a substrate processing apparatus and a substrate processing method according to embodiments will be described with reference to the accompanying drawings. In addition, in the present specification and the accompanying drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, whereby redundant description is omitted.

[0031] <First Embodiment>

[0032] When describing the substrate processing apparatus according to the present embodiment, a substrate processing system equipped with the substrate processing apparatus will be described first.

[0033] (Substrate Processing System)

[0034] Figure 1 is a plan view schematically showing the outline of the configuration of the substrate processing system according to the first embodiment. In addition, Figure 2 and Figure 3 are a front view and a rear view schematically showing the outline of the internal structure of the substrate processing system 1.

[0035] As shown in Figure 1As shown, the substrate processing system 1 includes: a cassette station 10, which houses a plurality of wafers W serving as substrates, into and out of the cassette station; and a processing station 11, which is equipped with a plurality of various processing devices for performing prescribed processing on the wafers W. Furthermore, the substrate processing system 1 has a structure that integrates the cassette station 10, the processing station 11, and the interface station 13, wherein the interface station 13 is adjacent to the processing station 11 and performs wafer W transfer with the exposure apparatus 12.

[0036] A cassette placement stage 20 is provided at the cassette station 10. The cassette placement stage 20 is provided with a plurality of cassette placement plates 21 for placing cassettes C when they are moved in from outside the substrate processing system 1 and when they are moved out of the substrate processing system 1.

[0037] At box station 10, there are [something] along [the line]. Figure 1 A wafer transport device 23 that moves freely on a transport path 22 extending in the X direction. The wafer transport device 23 moves freely in the vertical direction and also about the vertical axis (θ direction), thereby enabling the transport of wafers W between the cassette C on each cassette mount 21 and the handover device of the third block G3 of the processing station 11 described later.

[0038] Processing station 11 is equipped with multiple, for example, four blocks G1, G2, G3, and G4, each equipped with various devices. For example, on the front side of processing station 11 ( Figure 1 The first G1 is located on the negative X-direction side of the processing station 11. Figure 1 A second G2 is installed on the positive X-direction side. Additionally, on the side of processing station 11 adjacent to box station 10 ( Figure 1 A third G3 is installed on the negative Y-direction side of the processing station 11, on the side closest to the interface station 13. Figure 1 A fourth G4 is set on the positive Y-direction side.

[0039] like Figure 2 As shown, the first wafer G1 is equipped with multiple liquid processing devices, such as a developing device 30, and a resist coating device 31, which serves as a coating process. The developing device 30 is used to develop the wafer W. The resist coating device 31 is used to supply resist liquid to the wafer W to form a resist film as a coating film. The number and configuration of these devices, such as the developing device 30 and the resist coating device 31, can be arbitrarily selected.

[0040] In apparatuses such as the developing apparatus 30 and the resist coating apparatus 31, spin coating is performed on a wafer W using a specified processing solution and coating solution. In spin coating, for example, the processing solution and coating solution are sprayed onto the wafer W from a nozzle, and the wafer W is rotated to spread the processing solution and coating solution on the surface of the wafer W.

[0041] In the second G2, such Figure 3 As shown, a heat treatment apparatus 40 and a peripheral exposure apparatus 41 are arranged in a vertical and horizontal direction. The heat treatment apparatus 40 is used to perform heat treatments such as heating and cooling of the wafer W. For example, the heat treatment apparatus 40 performs a baking process on the wafer W to which a resist film is formed. The peripheral exposure apparatus 41 is used to expose the outer periphery of the wafer W. The number and arrangement of these apparatuses, such as the heat treatment apparatus 40 and the peripheral exposure apparatus 41, can be arbitrarily selected.

[0042] For example, in the third piece G3, multiple handover devices 50, 51, 52, 53, 54, 55, and 56 are arranged sequentially from bottom to top. Additionally, in the fourth piece G4, multiple handover devices 60, 61, and 62 are arranged sequentially from bottom to top.

[0043] like Figure 1 and Figure 3 As shown, a wafer transport region D is formed in the area surrounded by the first G1 to the fourth G4. A wafer transport device 70 is disposed in the wafer transport region D.

[0044] Each wafer transport device 70 has a transport arm 70a that can move freely in, for example, the Y direction, the X direction, the θ direction, and the vertical direction. Multiple wafer transport devices 70 are arranged vertically, and each wafer transport device 70 moves within the wafer transport area D, for example, it can transport wafers W to predetermined devices at the same height in each of the blocks G1 to G4.

[0045] In addition, a shuttle conveyor 80 is provided in the wafer transport area D to linearly transport wafers W between the third G3 and the fourth G4.

[0046] Shuttle conveyor 80, for example, along Figure 3 The shuttle conveyor 80 can move freely in the Y direction. It can move along the Y direction while supporting the wafer W to transport the wafer W between the transfer device 52 of the third G3 and the transfer device 62 of the fourth G4.

[0047] like Figure 1 As shown, a wafer transport device 90 is provided at an adjacent position on the positive X-direction side of the third block G3. The wafer transport device 90 has a transport arm 90a that can move freely along, for example, the X-direction, the θ-direction, and the vertical direction. The wafer transport device 90 can move vertically while supporting a wafer W to transport the wafer W to each transfer device in the third block G3.

[0048] Interface station 13 is provided with a wafer transport device 100 and a transfer device 101. The wafer transport device 100, for example, has a transport arm 100a that can move freely in the Y direction, the θ direction, and the up and down direction. The wafer transport device 100, for example, can support the wafer W on the transport arm 100a to transport the wafer W between the transfer device, the transfer device 101, and the exposure device 12 in the fourth G4.

[0049] The above-described substrate processing system 1 includes a control unit 200. The control unit 200 is, for example, a computer equipped with a CPU, memory, etc., and has a program storage unit (not shown). The program storage unit stores programs for controlling various processes of the substrate processing system 1. Alternatively, the program can be recorded on a computer-readable storage medium H and loaded from that storage medium H into the control unit 200. Part or all of the program can also be implemented using dedicated hardware (circuit board). The storage medium H can be a transient storage medium or a non-transient storage medium.

[0050] Next, the resist coating apparatus 31, which is a substrate processing apparatus according to this embodiment, will be described. Figure 4 This is a side cross-sectional view schematically showing the outline of the structure of the resist coating apparatus 31 according to this embodiment.

[0051] The resist coating apparatus 31 has a processing container 301 that can be sealed internally. A wafer W loading / unloading outlet (not shown) is formed on the side of the processing container 301.

[0052] A rotary chuck 302, serving as a substrate holding portion for holding the wafer W, is provided within the processing container 301. This rotary chuck 302 can be rotated at a predetermined speed by a chuck drive unit 303 equipped with an actuator such as a motor, thereby enabling the wafer W held in the rotary chuck 302 to rotate. Furthermore, the chuck drive unit 303 is provided with a lifting drive mechanism such as a cylinder, allowing the rotary chuck 302 to be raised and lowered freely.

[0053] Additionally, a cup 304 is provided inside the processing container 301, positioned outside the rotary chuck 302 and surrounding the wafer W held within the rotary chuck 302. The cup 304 includes an outer cup 305 for catching and recovering liquid spilled or falling from the wafer W, and an inner cup 306 located on the inner periphery of the outer cup 305. An opening 307 is formed on the upper surface of the outer cup 305 for the wafer W to pass through before and after transfer to the rotary chuck 302. Furthermore, a nozzle unit 308 for spraying resist liquid onto the wafer W is provided inside the processing container 301, movable freely in both vertical and horizontal directions.

[0054] In addition, the resist coating apparatus 31 in this embodiment includes a laser irradiation mechanism 310 for irradiating a laser onto the periphery of the wafer W, and a processing liquid ejection mechanism 320 for ejecting a processing liquid for forming a protective film onto the wafer W to which a resist film has been formed.

[0055] The laser irradiation mechanism 310 includes a laser source 311, an attenuator 312, a mask 313, and a laser irradiation section 314. A mirror 315 is disposed inside the laser irradiation section 314. The laser light output from the laser source 311 in a horizontal direction... Figure 4 The laser beam, indicated by the dashed arrow, is reflected by mirror 315 after passing through attenuator 312 and mask 313, and travels vertically downwards. It then irradiates the wafer W via a lens (not shown) in the laser irradiation unit 314. In this embodiment, the laser irradiation unit 314 is configured to move freely in the horizontal direction along the bidirectional arrow A via an arm (not shown) equipped with a drive mechanism.

[0056] Furthermore, there are no particular limitations on the structure and location of the laser irradiation mechanism 310, as long as it is capable of irradiating the resist film at the periphery of the wafer with laser. For example, in this embodiment, the laser irradiation unit 314 is configured to move freely in the horizontal direction along the double-headed arrow A, but the rotating chuck 302 can also be configured to move freely in the horizontal direction along the double-headed arrow A. In addition, the change of the laser irradiation position for irradiating the wafer W can be achieved not by horizontal movement of the laser irradiation unit 314 or the rotating chuck 302, but by adjusting the angle of the mirror 315. Furthermore, there are no particular limitations on the type, oscillation mode, or wavelength of the laser beam, as long as it can remove the resist film, but it is preferable that the laser is a solid-state laser with a wavelength of 240 nm or more. It is even more preferable that the laser is a pulsed laser.

[0057] The processing liquid ejection mechanism 320 includes a processing liquid supply source 321 for supplying processing liquid for forming a protective film, a processing liquid supply pipe 322 serving as a flow path for the processing liquid, and a processing liquid nozzle 323 serving as a processing liquid ejection part. In this embodiment, the processing liquid nozzle 323 includes a nozzle body 323a and a nozzle support portion 323b supporting the nozzle body 323a. The processing liquid nozzle 323 is configured to move freely in the horizontal direction along bidirectional arrow B via an arm (not shown) equipped with a drive mechanism. Furthermore, there are no particular limitations on the structure or installation position of the processing liquid ejection mechanism 320; any structure capable of ejecting processing liquid onto the upper surface of the resist film is acceptable.

[0058] There is no particular limitation on the type of processing solution; it is sufficient that the processing solution is soluble in the protective film removal solution described later and does not adversely affect the quality of the substrate or the coating film. For example, if the coating film formed on the substrate is a photoresist film, when an organic solvent such as a diluent is used as the protective film removal solution, the photoresist film dissolves along with the protective film. Therefore, when the coating film is a photoresist film, it is preferable that the protective film is a water-soluble film. When the protective film is a water-soluble film, for example, pure water can be used as the protective film removal solution, thereby removing only the protective film without dissolving the photoresist film. As a processing solution for forming such a water-soluble protective film, a water-soluble photoresist such as PVA (polyvinyl alcohol) can be used.

[0059] Figure 5 This is a schematic diagram showing the laser irradiation unit 314 and the treatment fluid nozzle 323 as viewed from above. Figure 5 As shown, in the resist coating apparatus 31 of this embodiment, a removal liquid spraying mechanism 330 is provided, having the same structure as the treatment liquid spraying mechanism 320, for spraying removal liquid for removing the protective film. The removal liquid spraying mechanism 330 includes a removal liquid supply source 331 for supplying removal liquid, a removal liquid supply pipe 332 serving as the flow path of the removal liquid, and a removal liquid nozzle 333 serving as the removal liquid spraying part. In this embodiment, the removal liquid nozzle 333 includes a nozzle body 333a and a nozzle support portion 333b supporting the nozzle body 333a. The removal liquid nozzle 333 is configured to move freely in the horizontal direction along the bidirectional arrow C via an arm equipped with a drive mechanism (not shown). Furthermore, there are no particular limitations on the structure, installation position, etc., of the removal liquid spraying mechanism 330, as long as it is configured to spray removal liquid onto the protective film formed on the upper surface of the resist film.

[0060] There are no particular restrictions on the type of removal solution, as long as it can dissolve the protective film without adversely affecting the quality of the substrate or the coated film. For example, for water-soluble protective films formed on the upper surface of the resist film, pure water can be used as the removal solution.

[0061] The resist coating apparatus 31 in this embodiment is configured as described above. Next, the wafer W processing method using the resist coating apparatus 31 will be described. Figure 6 The process shown is used to process the wafer W involved in this embodiment.

[0062] First, a resist liquid is sprayed onto the center of the wafer W held on the rotating chuck 302, and the rotating chuck 302 is rotated to form a resist film on the wafer W.

[0063] Next, as Figure 7As shown in (a), the processing liquid nozzle 323 for forming the protective film is moved to the periphery of the wafer W on which the resist film R is formed. At this time, the processing liquid nozzle 323 is moved so that the spray position of the processing liquid is located at least radially inward of the wafer W compared to the laser irradiation area described later. Next, the processing liquid is sprayed while the rotary chuck 302 is rotated, and the sprayed processing liquid is dried by the rotation of the rotary chuck 302, thereby achieving the desired effect. Figure 7 As shown in (b), a protective film P is formed on the upper surface of the resist film R. In addition, in this embodiment, the protective film P is formed only on the periphery of the wafer W on which the resist film R is formed, but it is also possible to spray the processing liquid towards the center of the wafer W and form the protective film P on the entire wafer W by rotating the rotating chuck 302.

[0064] Next, as Figure 7 As shown in (c), the processing liquid nozzle 323 is retracted to the outside of the wafer W, and the laser irradiation unit 314 is moved to the periphery of the wafer W. Then, the laser is irradiated while the rotating chuck 302 is rotated.

[0065] In the case of pulsed laser, for example Figure 8 That's how laser irradiation is performed. Figure 8 This is an enlarged top view schematically showing the periphery of wafer W under laser irradiation. Additionally, Figure 8 The left side of the paper represents the center of wafer W, and the right side represents the end of wafer W. Figure 8 In the example shown, laser irradiation is performed such that each irradiation area overlaps with the others along the circumference of wafer W (in the direction of the arrows in the figure). In detail, first, a first laser irradiation is performed on region L1, followed by a second laser irradiation overlapping region L1. Then, a third laser irradiation is performed overlapping region L2, which was irradiated with the second laser. Laser irradiation is performed in this manner, with each of the regions L1 to L6 overlapping sequentially, thereby removing the resist film along the circumference of wafer W. At this time, the laser irradiation section 314 ( Figure 7 The position of (b) is fixed. Then, after the resist film around the wafer W is removed, the laser irradiation unit 314 is moved from the area where the laser irradiation has been completed to the center of the wafer W to perform laser irradiation on the unirradiated area. In addition, the irradiation interval of the pulsed laser and the rotation speed of the rotating chuck 302 are appropriately set so that the laser irradiation as described above can be performed.

[0066] The laser irradiating wafer W passes through the protective film P and reaches the resist film R. Simultaneously, heat is generated at the interface between wafer W and the resist film R. Due to the expansion of the resist film R at the heat-generating location, the resist film R at the laser irradiation site, along with the protective film P formed on its upper surface, is peeled off from wafer W. As a result, unwanted resist film R at the periphery of wafer W is removed. Furthermore, as... Figure 7 (a) and Figure 7 As shown in (b), in this embodiment, the processing liquid is sprayed and the laser irradiation is performed at different time intervals. However, as long as the device structure in which the processing liquid sprayed onto the wafer W dries before it reaches the laser irradiation position so as to function as a protective film P, the processing liquid nozzle 323 and the laser irradiation unit 314 can be moved to the periphery of the wafer W respectively, and the processing liquid spraying and laser irradiation can be performed in the same process.

[0067] Next, as Figure 7 As shown in (d), the laser irradiation unit 314 is retracted to the outside of the wafer W, and the removal liquid nozzle 333 is moved to the formation area of ​​the protective film P remaining on the wafer W after being irradiated by the laser. At this time, the removal liquid nozzle 333 is moved so that the spray position of the removal liquid is located in a region radially inward of the wafer W than the formation area of ​​the protective film P. Then, the removal liquid is sprayed while the rotating chuck 302 is rotated, thereby removing the protective film P. Moreover, by removing the protective film P, the unwanted resist film R on the surface of the wafer W is removed, and only the resist film R required for pattern formation remains on the surface of the wafer W, thereby completing the EBR process. Afterward, the wafer W is, for example, transported to the heat treatment apparatus 40 for baking.

[0068] As described above, in the wafer W processing method of this embodiment, laser is used for EBR processing, so solvents such as diluents are not used during EBR processing. This suppresses the bulging and erosion of the resist film required for pattern formation.

[0069] Furthermore, in the case of EBR processing using lasers, there is a concern that laser irradiation may cause the dried resist to fragment and scatter beyond the periphery of the wafer W. However, in the wafer W processing method of this embodiment, a protective film P is formed on the upper surface of the resist film R before laser irradiation, so the fragments generated by laser irradiation scatter onto the upper surface of the protective film P. This protective film P is removed by a removal liquid, so the fragments scattered onto the upper surface of the protective film P are also removed along with the protective film P. That is, according to the processing method of forming a protective film P before laser irradiation as in this embodiment, it is possible to suppress the bulging and erosion of the resist film R while also dealing with fragments during laser irradiation. In addition, as a fragmentation dealing method, a method of laser irradiation is also provided, in which a gas such as nitrogen is blown from the radially inner side of the wafer W toward the outer side.

[0070] <Second Implementation Method>

[0071] The resist coating apparatus 31 in the first embodiment has the function of performing EBR processing on wafer W by having a laser irradiation function, but the laser irradiation function can also be implemented by a dedicated module. Figure 9 This is a schematic side cross-sectional view showing the outline of the structure of the laser irradiation device 32 of the substrate processing apparatus according to the second embodiment.

[0072] Figure 9 The laser irradiation device 32 shown in this embodiment is relative to Figure 4 The resist coating apparatus 31 shown does not have a nozzle unit 308, but its other structures are substantially the same as those of the resist coating apparatus 31. Specifically, the laser irradiation apparatus 32 has a processing container 401 that can be sealed internally, and a rotating chuck 402 serving as a substrate holding portion for holding the wafer W is provided inside the processing container 401. Furthermore, the rotating chuck 402 can be rotated at a predetermined speed by a chuck drive unit 403, and a cup 404 disposed outside the rotating chuck 402 and surrounding the wafer W held in the rotating chuck 402 is provided inside the processing container 401.

[0073] Furthermore, the laser irradiation device 32 includes a laser irradiation mechanism 410 for irradiating the periphery of the wafer W with laser light. The laser irradiation mechanism 410 includes a laser source 411, an attenuator 412, a mask 413, and a laser irradiation section 414. A mirror 415 is disposed inside the laser irradiation section 414.

[0074] Additionally, the laser irradiation apparatus 32 includes a processing liquid ejection mechanism 420 for ejecting a processing liquid for forming a protective film onto a wafer W to which a resist film has been formed. The processing liquid ejection mechanism 420 includes a processing liquid supply source 421, a processing liquid supply pipe 422, and a processing liquid nozzle 423 serving as the processing liquid ejection section. In this embodiment, the processing liquid nozzle 423 includes a nozzle body 423a and a nozzle support portion 423b that supports the nozzle body 423a. Furthermore, the laser irradiation apparatus 32 includes... Figure 4 The resist coating apparatus 31 shown has the same remover spraying mechanism 330, but the diagram is omitted. Furthermore, the structure of the laser irradiation apparatus 32 is not particularly limited; it can be any structure capable of laser irradiating the periphery of the wafer W being transported to the laser irradiation apparatus 32.

[0075] like Figure 10 As shown, the aforementioned laser irradiation device 32 is, for example, disposed on the first substrate G1 of the substrate processing system 1. Therefore, in the substrate processing system 1 of this embodiment, the resist coating device 31, which serves as a coating process apparatus, and the heat treatment apparatus 40, which performs the heating treatment of the wafer W, are used... Figure 3 The laser irradiation device 32, which serves as the substrate processing apparatus for EBR processing, is configured as a separate processing device. Furthermore, in the case where the laser irradiation function is implemented using a dedicated module as in this embodiment, the structure of the resist coating apparatus can utilize a known structure. Additionally, the structure of the heat treatment apparatus 40 can also utilize a known structure.

[0076] According to such a substrate processing system 1, the wafer W is transported in the order of resist coating device 31, heat treatment device 40, and laser irradiation device 32, and by performing predetermined processes in each device, for example, it is possible to perform... Figure 11 The process shown is as described. Furthermore, it can be implemented in the same manner as the method described in the first embodiment. Figure 11 The process of resist film formation, protective film formation, laser irradiation, and protective film removal is illustrated. Alternatively, it can be implemented using known methods. Figure 11 The baking process shown.

[0077] In such Figure 11 In the case of wafer W processing as shown, where a baking process is performed after the formation of the resist film, the resist film is cured by baking. Therefore, in EBR processing using solvents such as diluents, the baked resist film cannot be removed. On the other hand, in the wafer W processing using the laser irradiation device 32 according to this embodiment, the cured resist film after baking can be removed. That is, as... Figure 11 The EBR process of that kind of process can be implemented by the substrate processing system 1 involved in this embodiment.

[0078] Furthermore, according to the substrate processing system 1 equipped with the laser irradiation device 32, it is also possible to, for example, Figure 12 The resist coating process in the resist coating apparatus 31 and the baking process in the heat treatment apparatus 40 are alternately performed two or more times as shown in the process. Figure 12 In the example, this is done three times, followed by EBR processing. As mentioned above, it is difficult to remove the resist film after baking with solvents. Therefore, when forming a multilayer resist film on wafer W, EBR processing using solvents needs to be performed between resist film formation and baking. For example, in... Figure 11 When forming a three-layer resist film, if EBR processing is performed only using a solvent, an EBR process must be performed each time each resist film is formed, resulting in a total of three EBR processes. In contrast, according to the substrate processing system 1 of this embodiment, the removal of unwanted resist films is completed by performing an EBR process only after forming three resist films, thus significantly increasing throughput. Furthermore, since unwanted resist films can be removed simultaneously after forming multiple resist films, the peripheral positions of each resist film are consistent, and the overlap accuracy of each resist film is improved.

[0079] <Third Implementation Method>

[0080] In the above embodiments, a protective film is formed from the viewpoint of dealing with debris during laser irradiation. However, from the viewpoint of suppressing the bulging and erosion of the coating film caused by contact with the solvent, the formation of a protective film is not necessary.

[0081] Another aspect of this disclosure that does not require the formation of a protective film is a substrate processing apparatus comprising: a substrate holding section that holds and rotates a substrate on which a pattern-forming coating film is formed; a laser irradiation section that irradiates a laser onto a periphery of the substrate held in the substrate holding section; a solvent ejection section for ejecting solvent; and a control section that controls the operation of the laser irradiation section and the solvent ejection section, wherein the control section is configured to irradiate the laser onto a predetermined target removal area of ​​the coating film and eject the solvent onto a region of the coating film remaining on the substrate radially outward from the irradiated area of ​​the laser.

[0082] The implementation method described above will be explained in the third embodiment. Figure 13 This is a side cross-sectional view schematically showing the outline of the structure of the resist coating apparatus 31, which is a substrate processing apparatus according to this embodiment.

[0083] The resist coating device 31 in this embodiment does not have the processing liquid spraying mechanism 320 of the resist coating device 31 in the first embodiment. Figure 4 ) and the removal liquid spraying mechanism 330 ( Figure 5 On the other hand, it is equipped with a solvent ejection mechanism 340 that ejects solvent. Figure 13 The solvent ejection mechanism 340 includes a solvent supply source 341 for supplying solvent, a solvent supply pipe 342 as a flow path for the solvent, and a solvent ejection nozzle 343 as a solvent ejection part. In this embodiment, the solvent ejection nozzle 343 includes a nozzle body 343a and a nozzle support portion 343b that supports the nozzle body 343a. The solvent ejection nozzle 343 is configured to move freely in the horizontal direction along bidirectional arrow B via an arm (not shown) equipped with a drive mechanism. Furthermore, the construction of the solvent ejection mechanism 340 is not particularly limited; it only needs to be a structure capable of ejecting solvent onto the resist film. For example, a diluent can be used as the solvent.

[0084] The resist coating apparatus 31 of this embodiment is configured as described above. Next, the wafer W processing method using the resist coating apparatus 31 will be described. The wafer W processing according to this embodiment is performed according to... Figure 14 Follow the process shown.

[0085] First, a resist liquid is sprayed onto the center of the wafer W held on the rotating chuck 302, and the rotating chuck 302 is rotated to form a resist film on the wafer W.

[0086] Next, make Figure 13 The laser irradiation unit 314 shown moves to the periphery of the wafer W and irradiates it with laser light. Typically, in EBR processing, from the viewpoint of improving the yield of wafer W, a region for removing unwanted resist film is predetermined. In the first embodiment described above, all resist film within this region is removed by laser irradiation; however, in the third embodiment, only a portion of the unwanted resist film is removed by laser irradiation.

[0087] Figure 15 This is an illustration showing the formation state of the resist film on the wafer surface. Figure 15 The left side of the paper represents the end side of wafer W, and the right side represents the center side of wafer W. For example... Figure 15 As shown in (a), in the third embodiment, a region L other than the end of the wafer W is pre-defined at the periphery of the wafer W. T and to the area L T Irradiate with laser light. In this specification, the area L... T This is referred to as the "target removal area". Specifically, in the EBR process of this embodiment, the target removal area L of the resist film... TIrradiate with a laser to remove the target area L T The resist film. Target removal area L T This is an arbitrarily defined area considering factors such as wafer yield and solvent ejection location. Furthermore, the target area removal region L is preferred. T This refers to the area where a raised region occurs due to the contact between the solvent and the coated film during the resist film removal process (EBR) at the wafer periphery, using only solvents. In other words, the target area removal region L is preferred. T This refers to areas where the resist film does not completely dissolve upon contact with the solvent, but rather where the film's hardness is lower than before contact with the solvent. Irradiating these areas with a laser to remove the resist film effectively suppresses the formation of bulges.

[0088] In the direction Figure 15 The target removal area L shown in (a) T After being irradiated with a laser, as Figure 15 As shown in (b), the solvent ejection nozzle 343 is moved to the periphery of the wafer W. At this time, the solvent ejection nozzle 343 is moved so that the solvent ejection position is near the boundary between the laser irradiation area L and the resist film R1 to be removed. Next, the solvent is ejected while the rotating chuck 302 is rotated. Thus, as... Figure 15 As shown in (c), the unwanted resist film R1 remaining on the outside of the laser irradiation area is removed, and the EBR treatment is completed.

[0089] In the EBR process of this embodiment, although solvent is used to remove the unwanted resist film as in the conventional method, during the solvent spraying process, there is a region L where no resist film is formed between the unwanted resist film R1 and the resist film R2 required for pattern formation. Therefore, when the solvent is sprayed onto the unwanted resist film R1, the sprayed solvent is less likely to come into contact with the resist film R2 required for pattern formation, thereby suppressing bulging and erosion of the resist film R2.

[0090] Furthermore, the protective film described in the first and second embodiments is not provided in the EBR processing method of this embodiment, but a protective film may also be provided in the EBR processing of this embodiment. For example, if in Figure 15 In the stage shown in (a) before laser irradiation, a protective film is formed on the upper surface of the resist film R. Debris generated by laser irradiation then disperses onto the upper surface of this protective film. Furthermore, this debris is removed along with the protective film, so no debris remains on the upper surface of the resist film R2 required for pattern formation. That is, if the resist coating apparatus 31 according to the third embodiment includes the processing liquid ejection mechanism 320 for forming the protective film described in the first embodiment... Figure 4) and the protective film removal liquid spraying mechanism 330 ( Figure 5 This allows for the suppression of resist film bulging and erosion while also addressing fragmentation.

[0091] All points in the embodiments disclosed herein should be considered illustrative rather than restrictive. The above embodiments may be omitted, substituted, or modified in various ways without departing from the appended claims and their spirit.

[0092] Furthermore, the substrate processing apparatus for performing EBR processing disclosed herein can also be applied to processing substrates other than semiconductor wafers, such as FPD (flat panel display) substrates.

[0093] Explanation of reference numerals in the attached figures

[0094] 1: Substrate processing system; 31: Resist coating apparatus; 40: Heat treatment apparatus; 200: Control unit; 302, 402: Rotary chucks; 314: Laser irradiation unit; 323: Processing liquid nozzle; 333: Removal liquid nozzle; R: Resist film; P: Protective film; W: Wafer.

Claims

1. A substrate processing apparatus comprising: A substrate holding section holds a substrate on which a pattern forming coating film is formed and rotates it; The processing liquid ejection section ejects a processing liquid for forming a protective film onto the substrate held in the substrate holding section; A laser irradiation section irradiates a laser onto the periphery of the substrate on which the protective film is formed; The removal liquid spraying section sprays a removal liquid for removing the protective film onto the protective film; Solvent ejection section, used for ejecting solvent; and The control unit controls the operation of the laser irradiation unit and the solvent ejection unit. in, The control unit is configured to perform the following control: irradiate the laser into a pre-set target removal area of ​​the coating film, and spray the solvent into the coating film remaining on the substrate in a region radially outward from the irradiated area of ​​the laser.

2. The substrate processing apparatus according to claim 1, characterized in that, The coated film is a resist film, and the protective film is a water-soluble film.

3. The substrate processing apparatus according to claim 1, characterized in that, The laser in question is a solid-state laser with a wavelength of 240 nm or higher.

4. A substrate processing system comprising: A coating processing apparatus for performing a coating process on a substrate for forming a pattern; A heat treatment apparatus for performing heat treatment on the substrate; A substrate processing apparatus for removing the coating film at the periphery of the substrate; and The control unit controls the coating process apparatus, the heat treatment apparatus, and the substrate processing apparatus. in, The substrate processing apparatus includes: A substrate holding section that holds the substrate and rotates it; The processing liquid ejection section ejects a processing liquid for forming a protective film onto the substrate held in the substrate holding section; A laser irradiation section irradiates a laser onto the periphery of the substrate on which the protective film is formed; Solvent ejection section, used for ejecting solvent; and The removal liquid spraying section sprays a removal liquid for removing the protective film onto the protective film. The control unit is configured to perform the following control: alternately performing the coating process and the heating process two or more times to form two or more coating films on the substrate; spraying the processing liquid onto the coating film to form the protective film on the upper surface of the coating film; irradiating the laser onto a predetermined target removal area of ​​the coating film; spraying the solvent onto the coating film remaining on the substrate in a region radially outward of the irradiated area of ​​the laser; and spraying the removal liquid onto the protective film remaining on the substrate after being irradiated by the laser.

5. A substrate processing method, comprising the following steps: A processing liquid is sprayed onto a substrate on which a pattern-forming coating film is formed to form a protective film on the substrate; A laser is irradiated onto the periphery of the substrate on which the protective film is formed; A removal solution is sprayed onto the protective film remaining on the substrate after it has been irradiated with the laser to remove the protective film. In the process of irradiating the laser, the laser is irradiated onto a pre-defined target removal area of ​​the coating film. The substrate processing method further includes the following step: spraying solvent onto the coating film remaining on the substrate in a region radially outer of the laser irradiation area.

6. A readable computer storage medium, The program is stored in a computer that operates on the control unit of the substrate processing apparatus to allow the substrate processing apparatus to execute the substrate processing method according to claim 5.

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