Method of transferring a semiconductor wafer to a grinding device and method of manufacturing a semiconductor wafer

Abstract

A method for transferring a semiconductor wafer to a single-side polishing device without forming damage on the surface of the semiconductor wafer. A temporary stage (22) has a holding portion (11), a stage (22), and a guide portion (13), the stage (22) has a plurality of annular projections (23) on its surface, a spout (23b) for spouting a liquid (L) along the inner wall (23a) of each projection (23) is provided on the inner wall (23a) of each projection (23), and the semiconductor wafer (W) is held by non-contact adsorption of the liquid spouted from the spout (23b). Then, the liquid (L) is spouted from the spout (23b) at a first flow rate, the semiconductor wafer (W) is placed on the holding portion (11), the polishing surface of the semiconductor wafer (W) is held by non-contact adsorption on the stage (22), then the stage (22) is raised to attach the semiconductor wafer (W) to the polishing head, and then the stage (22) is lowered, the time from when the semiconductor wafer (W) is held on the holding portion (11) until the stage (22) starts to be lowered is set to 5 seconds or more.

Description

Technical Field

[0001] This invention relates to a method for transferring a semiconductor wafer to a grinding apparatus and a method for manufacturing a semiconductor wafer. Background Technology

[0002] Silicon wafers have long been widely used as substrates for semiconductor devices. Silicon wafers are manufactured by sequentially processing single-crystal silicon ingots through cutting, polishing, etching, double-sided grinding, single-sided grinding, and cleaning.

[0003] In the above processes, single-sided grinding is a process to remove the unevenness or undulations on the wafer surface to improve flatness, and mirror finishing is performed on the silicon wafer by chemical mechanical polishing (CMP).

[0004] The above-mentioned single-sided polishing process is performed using a single-wafer single-sided polishing device. The single-sided polishing device includes: a rotating platform with an abrasive cloth attached; and a polishing head, which holds the silicon wafer on the rotating platform by pressing, and while supplying slurry, rotates the rotating platform and the polishing head respectively to polish the polishing surface of the silicon wafer.

[0005] However, typically, when transferring a silicon wafer that has undergone double-sided polishing to a single-sided polishing apparatus, a transport mechanism such as a transport arm is used to hold the periphery of the semiconductor wafer, temporarily placing it on a temporary support, and then the semiconductor wafer is transferred to the polishing head of the single-sided polishing apparatus.

[0006] As a temporary support, for example, in Special Case 1, the following temporary support is described: it includes a support made of polyvinyl chloride (PVC) sponge and configured to be liftable, so that the support is raised to contact the grinding surface of the semiconductor wafer, thereby transferring it to the grinding head of the single-sided grinding device.

[0007] Existing technical documents Patent documents Patent document 1: Japanese Patent Application Publication No. 2016-197690. Summary of the Invention

[0008] The technical problem that the invention aims to solve The temporary support described in Patent Document 1 may cause damage to the surface of the semiconductor wafer because the sponge contacts the surface of the semiconductor wafer (polished surface).

[0009] Therefore, the object of the present invention is to provide a method for transferring a semiconductor wafer to a single-sided polishing apparatus without causing damage to the surface of the semiconductor wafer.

[0010] Solutions for solving technical problems The present invention, which solves the above-mentioned technical problems, is as follows: [1] A method for transferring a semiconductor wafer to a polishing apparatus, wherein after placing the semiconductor wafer to be polished on a temporary support, the semiconductor wafer is transferred to the polishing head of a single-sided polishing apparatus via the temporary support, the method being characterized in that... The temporary support platform includes: A holding portion, which holds the peripheral portion of the semiconductor wafer; A support platform, configured to be height-adjustable, has multiple annular protrusions on its surface. Each protrusion has an injection port on its inner wall that sprays liquid along the inner wall. The semiconductor wafer is held in place by non-contact adsorption through liquid injection from these ports. A guide section is disposed on the outer periphery of the semiconductor wafer, and determines the position of the semiconductor wafer when the support platform is raised to raise the semiconductor wafer. The liquid is sprayed from the nozzle at a first flow rate. A semiconductor wafer is then placed on the holding portion, and the polishing surface of the semiconductor wafer is non-contactly held on the support. The support is then raised to allow the semiconductor wafer to adhere to the polishing head. The time from when the semiconductor wafer is held in the holding portion until the attachment of the semiconductor wafer to the grinding head is completed is set to 5 seconds or more.

[0011] [2] A method for transferring a semiconductor wafer to a polishing apparatus, wherein after placing the semiconductor wafer to be polished on a temporary support, the semiconductor wafer is transferred to the polishing head of a single-sided polishing apparatus via the temporary support, the method being characterized in that... The temporary support platform includes: A holding portion, which holds the peripheral portion of the semiconductor wafer; A support platform, configured to be height-adjustable, has multiple annular protrusions on its surface. Each protrusion has an injection port on its inner wall that sprays liquid along the inner wall. The semiconductor wafer is held in place by non-contact adsorption through liquid injection from these ports. A guide section is disposed on the outer periphery of the semiconductor wafer, and determines the position of the semiconductor wafer when the support platform is raised to raise the semiconductor wafer. The ratio of the area of ​​the plurality of annular protrusions to the area of ​​the semiconductor wafer is more than 15%. The liquid is sprayed from the nozzle at a first flow rate, and then the semiconductor wafer is placed on the holding part so that the grinding surface of the semiconductor wafer is non-contactly adsorbed and held on the support. Then the support is raised so that the semiconductor wafer is attached to the grinding head.

[0012] [3] The method of transferring a semiconductor wafer to a polishing apparatus according to [1] or [2], wherein the flow rate of the liquid that raises the platform until the semiconductor wafer is attached to the polishing head is set to a second flow rate that is greater than the first flow rate.

[0013] [4] The method of transferring a semiconductor wafer to a polishing apparatus according to [1] or [2], wherein after the semiconductor wafer is transferred to the polishing head, the polishing surface of the semiconductor wafer is polished by the single-sided polishing apparatus, and then the semiconductor wafer is removed from the polishing head, and liquid is sprayed again from the spray nozzle at the first flow rate, and then the polished semiconductor wafer is placed on the holding part, and the polishing surface of the semiconductor wafer is non-contactly adsorbed and held on the support, and then the support is raised so that the semiconductor wafer is attached to the polishing head.

[0014] [5] A method for manufacturing a semiconductor wafer, characterized in that, After cutting a single crystal ingot grown by a specified method, the semiconductor wafer is polished, etched and double-sided ground, and then transferred to a single-sided grinding device by any one of the methods described in [1] to [4], and the surface of the semiconductor wafer is ground by the single-sided grinding device.

[0015] [6] The semiconductor wafer manufacturing method according to [5], wherein the semiconductor wafer is a silicon wafer.

[0016] Invention Effects According to the present invention, a semiconductor wafer can be transferred to a single-sided polishing apparatus without causing damage to the surface of the semiconductor wafer. Attached Figure Description

[0017] Figure 1 It is a diagram showing the temporary support platform described in Patent Document 1.

[0018] Figure 2 This is a diagram showing an example of a temporary support that can be used in this invention.

[0019] Figure 3 This is a diagram showing an example of a support platform with multiple annular protrusions. Detailed Implementation

[0020] (Method for transferring semiconductor wafers to a polishing apparatus) Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. Figure 1 The image shows the temporary support platform described in Patent Document 1. Figure 1The temporary support 100 shown includes a holding part 11 that holds the periphery of the semiconductor wafer W; a support 12 that is formed of PVC sponge and is configured to be liftable; and a guide part 13 that is disposed on the outer periphery of the semiconductor wafer W and determines the position of the semiconductor wafer W when the support 12 is raised and the semiconductor wafer W is raised.

[0021] In this temporary support 100, a semiconductor wafer W is placed on a holding part 11. When the support 12 is raised by a lifting mechanism (not shown), the support 12 contacts the polishing surface holding the semiconductor wafer W, causing the semiconductor wafer W to rise and thus transfer the semiconductor wafer W to the polishing head of the single-sided polishing apparatus. Therefore, damage may be formed on the surface (polishing surface) of the semiconductor wafer W.

[0022] In order to transfer the semiconductor wafer W to the grinding head without damaging the surface of the semiconductor wafer W, the inventors believe that the most suitable method is to use a non-contact temporary support, rather than... Figure 1 The temporary pile cap 100 shown is a temporary pile cap with a contact method, which leads to the idea of ​​using a temporary pile cap with a Bernoulli method.

[0023] exist Figure 2 The image shows an example of a temporary platform in the Bernoulli manner. Additionally, regarding... Figure 1 Structures that are identical as shown are labeled with the same reference numerals. For example... Figure 3 As shown, in Figure 2 In the temporary support 1 shown, the support 22 has a plurality of annular protrusions 23 on its surface. Furthermore, each protrusion 23 has an injection port 23b on its inner wall 23a, through which liquid L is injected. The injection port 23b is connected to a liquid supply pipe 24 disposed inside the support 22. If a liquid L such as pure water is injected from this injection port 23b, a swirling flow is generated inside the protrusion 23, thereby enabling non-contact adsorption and holding of the semiconductor wafer W.

[0024] In this temporary support 1, if liquid L is sprayed from the spray port 23b of the annular protrusion 23 provided on the support 22, and the semiconductor wafer W is placed on the holding part 11, the support 22 rises non-contactly by adsorbing and holding the polishing surface of the semiconductor wafer W through the lifting mechanism (not shown), thereby transferring it to the polishing head of the single-sided polishing apparatus. In this way, damage to the surface of the semiconductor wafer W can be prevented when transferring the semiconductor wafer W to the polishing head.

[0025] However, the inventors used... Figure 2During the study of the conditions for transferring semiconductor wafer W to the polishing head using the temporary support 1 shown, a single-sided polishing device was used to polish the surface of the semiconductor wafer W transferred to the polishing head under specified conditions. In the inspection process after cleaning, the quality of the surface of the semiconductor wafer W was evaluated by a surface inspection device. The results showed that the number of light point defects (LPD) was less than that of semiconductor wafer W transferred under other conditions.

[0026] Specifically, as shown in the embodiments described later, it is known that when the time (hereinafter also referred to as "holding time") of holding the semiconductor wafer W on the temporary support 1 is more than 5 seconds, or when the occupancy of the annular protrusion 23 provided on the surface of the support 22 is more than 15%, the number of LPDs measured in the inspection process is very small.

[0027] The reason for considering the relatively small number of LPDs mentioned above is that, in the Bernoulli-style temporary support 1, the polished surface of the semiconductor wafer W is cleaned using a swirling flow of liquid L ejected from the jet nozzle 23b. Thus, the inventors discovered that by using... Figure 2 The temporary support 1 in the Bernoulli manner shown not only avoids damage to the surface of the semiconductor wafer W before it is transferred to the grinding head, but also cleans the surface of the semiconductor wafer W to reduce the number of LPDs, thus completing the present invention.

[0028] In addition, the aforementioned "holding time" refers to the time from the moment the semiconductor wafer W is placed on the holding part 11 when liquid L is sprayed at a predetermined flow rate (first flow rate) from the spray port 23b of the annular protrusion 23 provided on the surface of the platform 22, to the time when the semiconductor wafer W is transferred to the grinding head and the platform is lowered or the spraying of liquid L is stopped, while the semiconductor wafer W is non-contactly adsorbed and held by the platform 22.

[0029] Furthermore, the so-called "occupancy rate of the annular protrusions" refers to the ratio (percentage) of the total area of ​​the multiple annular protrusions 23 to the area of ​​the semiconductor wafer W, and the area of ​​the annular protrusions 23 is the area of ​​the inner diameter portion of the protrusions 23.

[0030] Furthermore, the flow rate of the liquid L (the second flow rate) until the platform 22 is raised and the semiconductor wafer W is attached to the polishing head is preferably set to be greater than the first flow rate. Therefore, as shown in the embodiments described later, the cleaning effect on the surface of the semiconductor wafer W can be improved.

[0031] Furthermore, in order to improve the cleaning effect of the polished surface of the semiconductor wafer W, the semiconductor wafer W is transferred to the polishing head through the temporary support 1, the support 22 is lowered, and then the surface of the semiconductor wafer W is polished by a single-sided polishing device. After the semiconductor wafer W is removed from the polishing head, liquid L is sprayed again from the spray nozzle 23b at the first flow rate. Then the polished semiconductor wafer W is placed on the holding part 11, and the polished surface of the semiconductor wafer W is non-contactly adsorbed and held on the support 22. The support 22 is then raised so that the semiconductor wafer W is attached to the polishing head.

[0032] Thus, according to the present invention, the grinding surface of the semiconductor wafer W can be cleaned while preventing damage to the grinding surface of the semiconductor wafer W, and the semiconductor wafer W can be transferred to the grinding head.

[0033] (Semiconductor wafer manufacturing method) The semiconductor wafer manufacturing method of the present invention is characterized in that, after cutting a single-crystal silicon ingot grown by a prescribed method, performing polishing, etching and double-sided grinding on the obtained semiconductor wafer, the semiconductor wafer is transferred to a single-sided grinding device by the semiconductor wafer transfer to the grinding device method of the present invention described above, and the surface of the semiconductor wafer is ground by the single-sided grinding device.

[0034] As described above, the method for transferring a semiconductor wafer to a polishing apparatus according to the present invention can clean the polishing surface of the semiconductor wafer W while preventing damage to it, and can transfer the semiconductor wafer W to the polishing head. Therefore, it is possible to manufacture silicon wafers with a small number of LPDs.

[0035] The aforementioned semiconductor wafers are not particularly limited, but silicon wafers with a small number of LPDs can be appropriately manufactured. Example

[0036] The following describes embodiments of the present invention, but the present invention is not limited to these embodiments.

[0037] (Example 1 of the invention) A support platform (occupying 5% of the surface) with five annular protrusions having an inner diameter of 30mm is prepared and configured in... Figure 2 The silicon wafer, with a diameter of 300 mm, is placed on the temporary support 1 shown. Next, pure water is supplied from the jet 23b provided in the inner wall 23a of the annular protrusion 23 at a flow rate of 1 L / min, and the wafer is placed on the holding part 11. Then, while the surface of the silicon wafer is held non-contactly by the support 22, the support 22 is raised, and the silicon wafer is transferred to the polishing head. At this time, the holding time of the silicon wafer is set to 2 seconds. The transfer conditions of the silicon wafer are shown in Table 1. [Table 1] .

[0038] (Example 2 of the invention) Similar to Example 1, the silicon wafer is transferred to the grinding head. However, the number of annular protrusions 23 provided in the support 22 is set to 15 (occupancy rate 15%). All other conditions are exactly the same as in Example 1. The transfer conditions of the silicon wafer are shown in Table 1.

[0039] (Example 3 of the invention) Similar to Example 1, the silicon wafer is transferred to the grinding head. However, the number of annular protrusions 23 provided in the support 22 is set to 28 (occupancy rate 28%). All other conditions are exactly the same as in Example 1. The transfer conditions of the silicon wafer are shown in Table 1.

[0040] (Example 4 of the invention) Similar to Example 1, the silicon wafer is transferred to the grinding head. However, the number of annular protrusions 23 provided in the support 22 is set to 65 (65% occupancy). All other conditions are exactly the same as in Example 1. The transfer conditions of the silicon wafer are shown in Table 1.

[0041] (Example 5 of the invention) Similar to Example 1, the silicon wafer is transferred to the grinding head. However, the holding time of the silicon wafer is set to 5 seconds. All other conditions are exactly the same as in Example 1. The transfer conditions of the silicon wafer are shown in Table 1.

[0042] (Example 6 of the invention) Similar to Example 1, the silicon wafer is transferred to the grinding head. However, the holding time of the silicon wafer is set to 10 seconds. All other conditions are exactly the same as in Example 1. The transfer conditions of the silicon wafer are shown in Table 1.

[0043] (Example 7 of the invention) Similar to Example 1, the silicon wafer is transferred to the grinding head. However, the holding time of the silicon wafer is set to 60 seconds. All other conditions are exactly the same as in Example 1. The transfer conditions of the silicon wafer are shown in Table 1.

[0044] (Example 8 of the invention) Similar to Example 1, the silicon wafer is transferred to the grinding head. However, during the period from the start of raising the platform 22 to the transfer of the silicon wafer to the grinding head, the pure water flow rate is changed to 2 L / min. All other conditions are exactly the same as in Example 1. The transfer conditions of the silicon wafer are shown in Table 1.

[0045] (Example 9 of the invention) Similar to Example 1, the silicon wafer is transferred to the polishing head. However, after transferring the silicon wafer to the polishing head, the polishing surface of the silicon wafer is polished by a single-sided polishing device. Then, after removing the silicon wafer from the polishing head, pure water is sprayed again from the spray nozzle 23b at a rate of 1 L / min. The polished silicon wafer is then placed on the holding part 11, and the polishing surface of the silicon wafer is non-contactly adsorbed and held on the support platform. The support platform 22 is then raised to attach the silicon wafer to the polishing head. All other conditions are exactly the same as in Example 1. The transfer conditions of the silicon wafer are shown in Table 1.

[0046] (Example 10 of the invention) Similar to Example 1, the silicon wafer is transferred to the grinding head. However, the inner diameter of the annular protrusion 23 provided in the support 22 is set to 80 mm, and the number is set to 1 (occupancy rate 7.1%). Other conditions are exactly the same as in Example 1. The transfer conditions of the silicon wafer are shown in Table 1.

[0047] (Example 11 of the invention) Similar to Example 1, the silicon wafer is transferred to the grinding head. However, the inner diameter of the annular protrusion 23 provided in the support 22 is set to 80 mm, and the number is set to 2 (occupancy rate 14.2%). Other conditions are exactly the same as in Example 1. The transfer conditions of the silicon wafer are shown in Table 1.

[0048] (Example 12 of the invention) Similar to Example 1, the silicon wafer is transferred to the grinding head. However, the inner diameter of the annular protrusions 23 provided in the support 22 is set to 80 mm, and the number is set to 4 (occupancy rate 28.4%). Other conditions are exactly the same as in Example 1. The transfer conditions of the silicon wafer are shown in Table 1.

[0049] (Example 13 of the invention) Similar to Example 1, the silicon wafer is transferred to the grinding head. However, the inner diameter of the annular protrusions 23 provided in the support 22 is set to 80 mm, and the number is set to 5 (occupancy rate 35.6%). Other conditions are exactly the same as in Example 1. The transfer conditions of the silicon wafer are shown in Table 1.

[0050] (Example 14 of the invention) Similar to Example 1, the silicon wafer is transferred to the grinding head. However, the inner diameter of the annular protrusions 23 provided in the support 22 is set to 80 mm, and the number is set to 9 (64% occupancy). All other conditions are exactly the same as in Example 1. The transfer conditions of the silicon wafer are shown in Table 1.

[0051] (Example 15 of the invention) Similar to Example 1, the silicon wafer is transferred to the grinding head. However, the inner diameter of the annular protrusion 23 provided in the support 22 is set to 120 mm, and the number is set to 1 (occupancy rate 16%). Other conditions are exactly the same as in Example 1. The transfer conditions of the silicon wafer are shown in Table 1.

[0052] (Example 16 of the invention) Similar to Example 1, the silicon wafer is transferred to the grinding head. However, the inner diameter of the annular protrusions 23 provided in the support 22 is set to 120 mm, and the number is set to 2 (occupancy rate 32%). All other conditions are exactly the same as in Example 1. The transfer conditions of the silicon wafer are shown in Table 1.

[0053] (Example 17 of the invention) Similar to Example 1, the silicon wafer is transferred to the grinding head. However, the inner diameter of the annular protrusions 23 provided in the support 22 is set to 120 mm, and the number is set to 4 (64% occupancy). All other conditions are exactly the same as in Example 1. The transfer conditions of the silicon wafer are shown in Table 1.

[0054] Regarding Examples 1-17 above, the silicon wafers transferred to the polishing head were subjected to single-sided polishing using a single-sided polishing apparatus. After cleaning the silicon wafers, the number of LPDs was measured using a surface inspection device (KLA Tencor, Surfscan SP5). The measurement mode was set to DCO (Darkfield Composite Oblique) mode, and the number of LPDs above 19nm was measured. The results are shown in Table 1. Furthermore, in Table 1, when the number of LPDs is below 25, the LPD count roughly converges, and the product can be judged as good. When the number exceeds 25, it is determined that there are adhering substances, and the product can be judged as defective.

[0055] Comparing Invention Examples 1-4, it can be seen that when the number of annular protrusions 23 increases and the occupancy rate increases, the number of LPDs decreases. However, it can also be seen that when the occupancy rate is 15% or more, the number of LPDs remains approximately the same. These results are also the same for Invention Examples 10-14 and Invention Examples 15-17, where the inner diameter of the annular protrusions 23 has been changed.

[0056] Furthermore, comparing Invention Examples 1 and 5-7, it can be seen that the number of LPDs decreases as the holding time of the silicon wafer increases. However, it can also be seen that the number of LPDs remains approximately the same when the holding time is 5 seconds or more.

[0057] Furthermore, comparing Invention Example 1 and Invention Example 8, it can be seen that by increasing the pure water flow rate during the period from when the platform 22 is raised to when the silicon wafer is transferred to the grinding head, the number of LPDs is reduced. Furthermore, comparing Invention Example 1 and Invention Example 9, it can be seen that by repeatedly transferring the silicon wafer to the grinding head, the number of LPDs is also reduced.

[0058] Industrial availability According to the present invention, semiconductor wafers can be transferred to a single-sided polishing apparatus without causing damage to the surface of the semiconductor wafers, which is useful for the semiconductor wafer manufacturing industry.

[0059] Explanation of reference numerals in the attached figures 1, 100 - Temporary support, 11 - Holding part, 12, 22 - Support, 13 - Guiding part, 23 - Annular protrusion, 23a - Inner wall, 23b - Injection port, 24 - Liquid supply piping, L - Liquid, W - Semiconductor wafer.

Claims

1. A method for transferring a semiconductor wafer to a polishing apparatus, wherein after placing the semiconductor wafer to be polished on a temporary support, the semiconductor wafer is transferred to the polishing head of a single-sided polishing apparatus via the temporary support, the method being characterized in that... The temporary support platform includes: A holding portion, which holds the peripheral portion of the semiconductor wafer; A support platform, configured to be height-adjustable, has multiple annular protrusions on its surface. Each protrusion has an injection port on its inner wall that sprays liquid along the inner wall. The semiconductor wafer is held in place by non-contact adsorption through liquid injection from these ports. A guide section is disposed on the outer periphery of the semiconductor wafer, and determines the position of the semiconductor wafer when the support platform is raised to raise the semiconductor wafer. The liquid is sprayed from the nozzle at a first flow rate. A semiconductor wafer is then placed on the holding portion, and the polishing surface of the semiconductor wafer is non-contactly held on the support. The support is then raised to allow the semiconductor wafer to adhere to the polishing head. The time from when the semiconductor wafer is held in the holding portion until the attachment of the semiconductor wafer to the grinding head is completed is set to 5 seconds or more.

2. A method for transferring a semiconductor wafer to a polishing apparatus, wherein after placing the semiconductor wafer to be polished on a temporary support, the semiconductor wafer is transferred to the polishing head of a single-sided polishing apparatus via the temporary support, the method being characterized in that... The temporary support platform includes: A holding portion, which holds the peripheral portion of the semiconductor wafer; A support platform, configured to be height-adjustable, has multiple annular protrusions on its surface. Each protrusion has an injection port on its inner wall that sprays liquid along the inner wall. The semiconductor wafer is held in place by non-contact adsorption through liquid injection from these ports. A guide section is disposed on the outer periphery of the semiconductor wafer, and determines the position of the semiconductor wafer when the support platform is raised to raise the semiconductor wafer. The ratio of the area of ​​the plurality of annular protrusions to the area of ​​the semiconductor wafer is more than 15%. The liquid is sprayed from the nozzle at a first flow rate, and then the semiconductor wafer is placed on the holding part so that the grinding surface of the semiconductor wafer is non-contactly adsorbed and held on the support. Then the support is raised so that the semiconductor wafer is attached to the grinding head.

3. The method for transferring a semiconductor wafer to a polishing apparatus according to claim 1 or 2, wherein, The flow rate of the liquid that raises the platform until the semiconductor wafer is attached to the grinding head is set to a second flow rate that is greater than the first flow rate.

4. The method for transferring a semiconductor wafer to a polishing apparatus according to claim 1 or 2, wherein, After the semiconductor wafer is transferred to the polishing head, the polishing surface of the semiconductor wafer is polished by the single-sided polishing device. Then, after the semiconductor wafer is removed from the polishing head, liquid is sprayed again from the spray nozzle at the first flow rate. The polished semiconductor wafer is then placed on the holding part, and the polishing surface of the semiconductor wafer is non-contactly adsorbed and held on the support. The support is then raised so that the semiconductor wafer is attached to the polishing head.

5. A method for manufacturing a semiconductor wafer, characterized in that, After cutting a single crystal ingot grown by a prescribed method, the resulting semiconductor wafer is polished, etched, and subjected to double-sided grinding. The semiconductor wafer is then transferred to a single-sided grinding apparatus by the method described in any one of claims 1 to 4, and the surface of the semiconductor wafer is ground by the single-sided grinding apparatus.

6. The method for manufacturing a semiconductor wafer according to claim 5, wherein, The semiconductor wafer is a silicon wafer.

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