电容结构的制备方法、电容结构及存储器
By employing a dielectric layer structure consisting of an amorphous layer and a high dielectric constant layer in the capacitor structure, the problem of large leakage current in the capacitor structure was solved, and the capacitor performance was improved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- CHANGXIN MEMORY TECH INC
- Filing Date
- 2021-01-20
- Publication Date
- 2026-07-17
AI Technical Summary
In existing capacitor structures, the dielectric layer material generates a large leakage current when it comes into contact with the metal electrode, resulting in a large leakage current in the capacitor structure.
In the method for fabricating the capacitor structure, a dielectric layer structure consisting of a first amorphous layer and a high dielectric constant layer stacked together is adopted. The first amorphous layer retains its amorphous structure after annealing, while the high dielectric constant layer is formed by crystallization after annealing the initial dielectric constant layer, thereby suppressing electron migration and increasing the dielectric constant.
This reduces the leakage current of the capacitor structure and improves its performance and dielectric constant.
Smart Images
Figure CN114864425B_ABST