Electronic device, integrated circuit, and semiconductor device

Abstract

Embodiments of the present application provide an electronic device, an integrated circuit and a semiconductor device, the semiconductor device comprising: a substrate; a die connected to the substrate; a heat-conductive shell, the die being located in the heat-conductive shell; and a first thermal interface material; wherein: the heat-conductive shell comprises: a first part and a second part; the second part is fixed on the substrate around the die, the first part is located in a through hole formed by a top wall of the second part; an edge of the first part is formed with a first lap joint portion, a top wall of the second part is formed with a second lap joint portion, the first lap joint portion is lapped with the second lap joint portion, and the first lap joint portion is located between the second lap joint portion and the substrate; and the first thermal interface material is located between the first part and the die, and is used to conduct heat generated by the die to the first part. Thus, the contact thermal resistance between the die and the heat-conductive shell of the semiconductor device can be reduced, and the heat dissipation effect of the semiconductor device can be improved.

Description

Technical Field

[0001] This application relates to the field of integrated circuit packaging technology, and in particular to an electronic device, integrated circuit, and semiconductor device. Background Technology

[0002] With the development of electronic technology, the size, power consumption, and package size of chips are getting larger and larger, and the heat dissipation problem of packaged chips is receiving more and more attention. For example, a 1-degree reduction in the junction temperature of a server's CPU (Central Processing Unit) chip can significantly improve the server's computing performance.

[0003] In related technologies, a packaged chip includes a substrate, a die, and a package cap. The substrate and the package cap enclose a cavity, within which the die is disposed. The lower surface of the die is electrically connected to the upper surface of the substrate, and a thermal interface material is filled between the upper surface of the die and the lower surface of the package cap. The die can dissipate heat outward through the thermal interface material and the package cap.

[0004] However, in related technologies, the contact thermal resistance between the die and the package cover can easily increase, affecting the heat dissipation of the packaged chip. Summary of the Invention

[0005] This application provides an electronic device, integrated circuit, and semiconductor device that can reduce the contact thermal resistance between the die and the heat-conducting housing of the semiconductor device, thereby improving the heat dissipation effect of the semiconductor device.

[0006] In a first aspect, embodiments of this application provide a semiconductor device, comprising: a substrate; a bare die connected to the substrate; a thermally conductive housing, the bare die being located within the thermally conductive housing; and a first thermal interface material; wherein: the thermally conductive housing comprises: a first component and a second component; the second component is fixed to the substrate around the bare die, and the first component is located in a through-hole formed in the top wall of the second component; a first overlap portion is formed on the edge of the first component near the substrate, and a second overlap portion is formed on the top wall of the second component, the first overlap portion overlaps with the second overlap portion, and the first overlap portion is located between the second overlap portion and the substrate; the first thermal interface material is located between the first component and the bare die, for conducting heat generated by the bare die to the first component.

[0007] The semiconductor device provided in this application provides a method to place a bare die between a substrate and a first component, and to place a first thermal interface material between the bare die and the first component. This allows the bare die and the first component to be tightly bonded together through the first thermal interface material, so that the heat generated by the bare die can be conducted to the first component through the first thermal interface material. This reduces the contact thermal resistance between the bare die and the first component and improves the heat dissipation effect of the semiconductor device.

[0008] By fixing the second component around the die to the substrate, the first component is located in a through-hole formed in the top wall of the second component; and by forming a first overlapping portion on the edge of the first component near the substrate, and forming a second overlapping portion on the top wall of the second component, the second overlapping portion overlaps the side of the first overlapping portion away from the substrate, thereby allowing the second component to press the first component firmly onto the die. Firstly, this avoids delamination of the first thermal interface material between the die and the first component, ensuring that the contact thermal resistance between the die and the first component does not increase, thus guaranteeing the heat dissipation effect of the semiconductor device. Secondly, during the curing process of the first thermal interface material, no additional tooling is needed to apply pressure to the first component, simplifying the semiconductor device packaging operation and improving the packaging efficiency. Thirdly, it prevents the first component from detaching.

[0009] In one possible implementation, the second overlap is formed on the edge of the top wall of the second component away from the substrate.

[0010] By forming a second overlapping portion on the edge of the top wall of the second component away from the substrate, it is not only convenient to overlap the first overlapping portion with the side of the second overlapping portion facing the substrate, but also convenient to limit the first overlapping portion in a direction parallel to the substrate.

[0011] In one possible implementation, the orthographic projection of the side of the die facing away from the substrate onto the substrate is located within the orthographic projection range of the side of the first component facing the substrate onto the substrate.

[0012] By setting the orthographic projection of the side of the die facing away from the substrate onto the substrate within the orthographic projection range of the side of the first component facing the substrate onto the substrate, the side of the first component facing the substrate completely covers the side of the die facing away from the substrate, thereby increasing the contact area between the die and the first component and improving heat dissipation.

[0013] In one possible implementation, the orthographic projection of the side of the die facing away from the substrate onto the substrate is located within the orthographic projection range of the side of the first component facing away from the substrate onto the substrate.

[0014] By setting the orthogonal projection of the side of the die away from the substrate onto the substrate within the orthogonal projection range of the side of the first component away from the substrate onto the substrate, the side of the first component away from the substrate completely covers the side of the die away from the substrate, thereby ensuring that the pressure on the side of the first component away from the substrate is evenly transmitted to the side of the die away from the substrate, thus ensuring the effect of the first component pressing the die.

[0015] In one possible implementation, the side of the first component facing away from the substrate is higher than the side of the top wall of the second component facing away from the substrate.

[0016] By setting the side of the first component away from the substrate to be higher than the side of the top wall of the second component away from the substrate, the heat sink or other components set on the side of the first component away from the substrate can further press the first component onto the die, thereby better avoiding the delamination of the first thermal interface material between the die and the first component, further ensuring that the contact thermal resistance between the die and the first component does not increase, and further ensuring the heat dissipation effect of the semiconductor device.

[0017] In one possible implementation, the side of the first overlapping portion facing the substrate is flush with the side of the first component facing the substrate; the side of the first overlapping portion away from the substrate is located between the side of the first component away from the substrate and the side of the first component facing the substrate.

[0018] By setting the side of the first overlapping portion facing the substrate to be flush with the side of the first component facing the substrate, the bonding effect between the side of the first component facing the substrate and the side of the bare die facing away from the substrate can be guaranteed. By setting the side of the first overlapping portion facing away from the substrate to be between the side of the first component facing away from the substrate and the side of the first component facing the substrate, it is not only beneficial to set the side of the first component facing away from the substrate higher than the side of the second component facing away from the substrate; but also convenient to limit the second overlapping portion in a direction parallel to the substrate when the second overlapping portion overlaps the side of the first overlapping portion facing away from the substrate.

[0019] In one possible implementation, the side of the second overlapping portion facing away from the substrate is flush with the side of the top wall of the second component facing away from the substrate; the side of the second overlapping portion facing the substrate is located between the side of the top wall of the second component facing away from the substrate and the side of the top wall of the second component facing the substrate; the side of the second overlapping portion facing the substrate overlaps with the side of the first overlapping portion facing away from the substrate.

[0020] By setting the side of the second overlapping portion facing away from the substrate to be flush with the side of the top wall of the second component facing away from the substrate, it is advantageous to set the side of the second component facing away from the substrate lower than the side of the first component facing away from the substrate, thereby avoiding interference from the side of the second overlapping portion facing away from the substrate when the heat sink or other components press the first component onto the bare die. By setting the side of the second overlapping portion facing the substrate to be located between the side of the top wall of the second component facing away from the substrate and the side of the top wall of the second component facing the substrate, it is convenient to limit the first overlapping portion in a direction parallel to the substrate when the side of the second overlapping portion facing the substrate overlaps the side of the first overlapping portion facing away from the substrate.

[0021] In one possible implementation, the first overlapping portion extends horizontally away from the substrate, and the second overlapping portion extends horizontally toward the substrate.

[0022] By setting the first overlapping portion to extend horizontally away from the substrate and the second overlapping portion to extend horizontally towards the substrate, not only can the side of the first overlapping portion away from the substrate and the side of the second overlapping portion towards the substrate fit together better, allowing pressure to be transmitted evenly through the bonding surface, but it also helps to ensure that the thickness and strength of the first overlapping portion and the second overlapping portion are uniform.

[0023] In one possible implementation, the side of the second overlapping portion facing the substrate has a first protrusion, and the side of the first overlapping portion away from the substrate has a first groove, with the first protrusion accommodated in the first groove; and / or, the side of the first overlapping portion away from the substrate has a second protrusion, and the side of the second overlapping portion facing the substrate has a second groove, with the second protrusion accommodated in the second groove.

[0024] By providing a mutually cooperating protrusion and groove on the side of the first overlapping portion away from the substrate and the side of the second overlapping portion facing the substrate, when the side of the second overlapping portion facing the substrate overlaps the side of the first overlapping portion away from the substrate, the protrusion is accommodated in the groove, thereby enabling better positioning of the first component and the second component in a direction parallel to the substrate.

[0025] In one possible implementation, the second overlapping portion extends obliquely from the second component toward the first component on the side facing the substrate; the first overlapping portion extends obliquely from the second component toward the first component on the side away from the substrate; the oblique direction and oblique angle of the second overlapping portion facing the substrate correspond to the oblique direction and oblique angle of the first overlapping portion away from the substrate.

[0026] By setting the side of the second overlapping portion facing the substrate and the side of the first overlapping portion facing away from the substrate to both extend obliquely from the second component toward the first component; and by making the oblique direction and oblique angle of the side of the second overlapping portion facing the substrate correspond to the oblique direction and oblique angle of the side of the first overlapping portion facing away from the substrate, not only can the side of the first overlapping portion facing away from the substrate and the side of the second overlapping portion facing the substrate fit better, but it is also beneficial to limit the first component and the second component in a direction parallel to the substrate.

[0027] In one possible implementation, an elastic element is provided between the overlap of the second overlap and the first overlap.

[0028] By providing an elastic element between the second overlap and the first overlap, the second component can provide pre-pressure to the first component, thereby better pressing the first component onto the bare sheet and thus helping to prevent delamination of the first thermal interface material.

[0029] In one possible implementation, the first overlap portion surrounds the edge of the first component; or, the first overlap portion includes a plurality of first overlap segments arranged at circumferential intervals along the first component.

[0030] By setting a first overlapping portion to surround the edge of the first component; or by setting the first overlapping portion to include multiple first overlapping segments arranged at intervals along the circumference of the first component, the flexibility of the first overlapping portion setting can be increased to adapt to different application scenarios.

[0031] In one possible implementation, the second overlapping portion surrounds the edge of the through hole; or, the second overlapping portion includes a plurality of second overlapping segments arranged at circumferential intervals along the through hole.

[0032] By setting a second overlapping portion around the edge of the through hole; or by setting the second overlapping portion to include multiple second overlapping segments arranged at intervals along the circumference of the through hole, the flexibility of the second overlapping portion setting can be increased to adapt to different application scenarios.

[0033] In one possible implementation, the height of the side of the first component facing away from the substrate is higher than the height of the side of the second component facing away from the substrate by a range of 0.5 mm to 1 mm.

[0034] By setting the height of the side of the first component facing away from the substrate to be 0.5mm to 1mm higher than the side of the second component facing away from the substrate, it is ensured that the height of the side of the first component facing away from the substrate is within a suitable range. This not only ensures that the heat sink or other components located on the side of the first component facing away from the substrate press the first component firmly onto the bare die, but also avoids occupying too much space.

[0035] In one possible implementation, the width of the second overlapping portion extending from the second component toward the first component ranges from 2 mm to 3 mm; and / or, the width of the first overlapping portion extending from the first component toward the second component ranges from 2 mm to 3 mm.

[0036] By setting the width of the second overlap portion extending from the second component toward the first component to be 2mm to 3mm; and / or setting the width of the first overlap portion extending from the first component toward the second component to be 2mm to 3mm, the widths of the first overlap portion and the second overlap portion are ensured to be within a suitable range. This not only ensures the overlap stability and pressure transmission effect of the first overlap portion and the second overlap portion, but also avoids affecting the structural strength of the first component and the second component.

[0037] In one possible implementation, the first component and the through hole are clearance-fitted.

[0038] By setting a clearance fit between the first component and the through hole, it is ensured that the first component can move relative to the second component toward the substrate or has a tendency to move toward the substrate, thereby ensuring that the pressure applied to the first component can be transmitted to the first thermal interface material to avoid delamination of the first thermal interface material.

[0039] In one possible implementation, the semiconductor package includes at least two dies, each die being connected to the substrate; the thermally conductive housing includes at least two first components and one second component, each first component being located above the first thermal interface material of one die, and the top wall of the second component having at least two through holes, each through hole accommodating one first component.

[0040] By providing at least two through holes on the top wall of the second component and accommodating at least two first components one-to-one within the at least two through holes, when the semiconductor device includes at least two dies, at least two first components are pressed one-to-one onto the first thermal interface material of at least two dies, thereby ensuring that the first thermal interface material on the side of at least two dies facing away from the substrate does not delaminate, thus ensuring the heat dissipation effect of at least two dies.

[0041] In one possible implementation, an underfill adhesive is provided between the bare die and the substrate.

[0042] By providing an underfill adhesive between the die and the substrate, not only can the reliability of the electrical connection between the die and the substrate be guaranteed, but also the stability of the die on the substrate can be guaranteed.

[0043] In one possible implementation, the first component is made of the same material as the second component; or, the first component is made of a different material than the second component, and the thermal conductivity of the first component is better than that of the second component.

[0044] By setting the thermal conductivity of the first component to be better than that of the second component, it is beneficial to ensure the heat dissipation effect of the bare die through the first thermal interface material and the first component, thereby ensuring the heat dissipation effect of the semiconductor device.

[0045] In one possible implementation, the first thermal interface material includes at least one of silicone grease or metallic silver.

[0046] In one possible implementation, the semiconductor device includes a chip.

[0047] By incorporating a semiconductor device, including a chip, a chip packaging structure is provided, which helps improve the chip's heat dissipation.

[0048] In a second aspect, embodiments of this application provide an integrated circuit, comprising: a circuit board, a heat sink, a second thermal interface material, and at least one semiconductor device as described in any of the preceding claims; the semiconductor device is connected to the circuit board; the heat sink is used to dissipate heat from the semiconductor device; and the second thermal interface material is located between the semiconductor device and the heat sink.

[0049] The integrated circuit provided in this application connects a semiconductor device to a circuit board, places a heat sink close to the semiconductor device, and places a second thermal interface material between the semiconductor device and the heat sink. This not only allows the heat sink to better dissipate heat from the semiconductor device, improving its performance, but also allows the heat sink to apply pressure to the first component, further preventing delamination of the first thermal interface material between the first component and the die, thus ensuring the die's heat dissipation effect. Furthermore, since the integrated circuit includes the aforementioned semiconductor device, it also possesses the effects of the semiconductor device.

[0050] In one possible implementation, the second thermal interface material includes at least one of a carbon fiber thermal pad, a gel, silicone grease, or a phase change thermal conductive material.

[0051] Thirdly, embodiments of this application provide an electronic device that includes at least the integrated circuit described above.

[0052] The electronic device provided in this application embodiment is equipped with the aforementioned integrated circuit, which includes the aforementioned semiconductor device. Because the aforementioned semiconductor device has good heat dissipation, and the aforementioned integrated circuit further improves the heat dissipation effect of the semiconductor device, the performance of the bare die in the semiconductor device is relatively high and stable. This results in relatively high and stable performance of the electronic device, which not only helps optimize the user experience of the electronic device but also helps ensure the stability of signal transmission in the electronic device, ensuring its normal operation.

[0053] In one possible implementation, the electronic device includes a server.

[0054] By incorporating the aforementioned integrated circuit, which includes the aforementioned semiconductor device, into the server, the semiconductor device exhibits superior heat dissipation. Furthermore, the integrated circuit further enhances the heat dissipation effect of the semiconductor device, resulting in higher and more stable performance of the bare die within the semiconductor device. This, in turn, leads to higher and more stable server performance. Consequently, this not only optimizes the server's user experience but also ensures the stability of signal transmission within the server, guaranteeing its normal operation.

[0055] Fourthly, embodiments of this application provide a method for fabricating a semiconductor device, comprising: providing a substrate, a die, a first component, and a second component; electrically connecting a side of the die facing the substrate to the upper surface of the substrate; disposing of a first thermal interface material on the side of the die facing away from the substrate; disposing of the first component on the side of the first thermal interface material facing away from the die; surrounding the first component and the die in the circumferential direction, wherein the top wall of the second component has a through hole, and the first component is accommodated in the through hole; a first overlap portion is formed on the edge of the first component near the substrate, and a second overlap portion is formed on the top wall of the second component, the second overlap portion overlapping the side of the first overlap portion facing away from the substrate; and sealingly connecting the bottom end of the second component to the upper surface of the substrate.

[0056] The die packaging structure manufacturing method provided in this application embodiment provides a first thermal interface material on the side of the die away from the substrate, and a first component is disposed on the side of the first thermal interface material away from the die. This allows the side of the die away from the substrate and the side of the first component facing the substrate to be tightly bonded through the first thermal interface material, thereby reducing the contact thermal resistance between the side of the die away from the substrate and the side of the first component facing the substrate and improving the heat dissipation effect of the die.

[0057] By surrounding the first component and the die in the circumferential direction, the first component is housed in a through-hole in the top wall of the second component, and the second overlapping portion of the top wall of the second component overlaps with the side of the first overlapping portion of the edge of the first component facing away from the substrate. In addition, the bottom end of the second component is sealed to the upper surface of the substrate. This allows the second component to press the first component firmly onto the die. As a result, not only is it possible to eliminate the need for additional tooling to apply pressure to the first component during the curing process of the first thermal interface material, thus simplifying the semiconductor device packaging operation, improving the packaging efficiency of the semiconductor device, and preventing the first component from falling off, but it also avoids the delamination of the first thermal interface material between the die and the first component, ensuring the heat dissipation effect of the die. Attached Figure Description

[0058] Figure 1 This is a schematic diagram of the structure of a semiconductor device in related technologies;

[0059] Figure 2 This is a schematic diagram of the structure of a semiconductor device provided in an embodiment of this application;

[0060] Figure 3 A schematic diagram of the partial structure of the first and second components cooperating in a semiconductor device provided in an embodiment of this application. Figure 1 ;

[0061] Figure 4 A schematic diagram of the partial structure of the first and second components cooperating in a semiconductor device provided in an embodiment of this application. Figure 2 ;

[0062] Figure 5 A top view of a semiconductor device provided in an embodiment of this application. Figure 1 ;

[0063] Figure 6 A top view of a semiconductor device provided in an embodiment of this application. Figure 2 ;

[0064] Figure 7 A schematic diagram of the overlapping structure of the first and second overlapping portions in a semiconductor device provided in an embodiment of this application. Figure 1 ;

[0065] Figure 8 A schematic diagram of the overlapping structure of the first and second overlapping portions in a semiconductor device provided in an embodiment of this application. Figure 2 ;

[0066] Figure 9 A schematic diagram of the overlapping structure of the first and second overlapping portions in a semiconductor device provided in an embodiment of this application. Figure 3 ;

[0067] Figure 10 A schematic diagram of the overlapping structure of the first and second overlapping portions in a semiconductor device provided in an embodiment of this application. Figure 4 ;

[0068] Figure 11 A schematic diagram of the overlapping structure of the first and second overlapping portions in a semiconductor device provided in an embodiment of this application. Figure 5 ;

[0069] Figure 12 A schematic diagram of the structure of an elastic member extending circumferentially along a through hole in a semiconductor device provided in an embodiment of this application, with the side of the elastic member facing the second overlapping portion at the first overlapping portion.

[0070] Figure 13A schematic diagram of a semiconductor device provided in an embodiment of this application, showing that the elastic members are arranged at circumferential intervals along the side of the first overlapping portion facing the second overlapping portion.

[0071] Figure 14 A schematic diagram of the structure of a first overlapping portion of a first component in a semiconductor device provided in an embodiment of this application, which surrounds the edge of the first component;

[0072] Figure 15 A schematic diagram of a structure in which a plurality of first overlapping segments of a first component in a semiconductor device are arranged at intervals along the circumferential direction of the first component, according to an embodiment of this application;

[0073] Figure 16 A schematic diagram of the structure of a second overlapping portion of a second component in a semiconductor device provided in an embodiment of this application, which surrounds the edge of a through-hole;

[0074] Figure 17 A schematic diagram of a structure in which multiple second overlapping segments of a second component in a semiconductor device are arranged at circumferential intervals along a through hole, according to an embodiment of this application;

[0075] Figure 18 A schematic flowchart illustrating a method for fabricating a semiconductor device according to an embodiment of this application;

[0076] Figure 19 A schematic diagram of a semiconductor device fabrication method provided in an embodiment of this application, in which the side of the bare die facing the substrate is electrically connected to the upper surface of the substrate;

[0077] Figure 20 A schematic diagram of a semiconductor device fabrication method provided in an embodiment of this application, wherein a first thermal interface material is provided on the side of the die facing away from the substrate;

[0078] Figure 21 A schematic diagram of a semiconductor device fabrication method provided in an embodiment of this application, wherein a first component is disposed on the side of the first thermal interface material that is away from the bare die;

[0079] Figure 22 A schematic diagram of a semiconductor device fabrication method according to an embodiment of this application, in which a second component is disposed around a first component and a die in the circumferential direction;

[0080] Figure 23 This is a schematic diagram of the structure of an integrated circuit provided in an embodiment of this application;

[0081] Figure 24 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application.

[0082] Explanation of reference numerals in the attached figures:

[0083] 100, 100' - Semiconductor device; 110, 110' - Substrate; 111 - Top surface;

[0084] 120, 120' - Bare die; 130, 130' - First thermal interface material; 140' - Encapsulation housing;

[0085] 140 - First component; 141 - First overlapping part; 1411 - First overlapping section;

[0086] 142 - First groove; 143 - Second protrusion; 150 - Second component;

[0087] 151-Top wall; 1511-Through hole; 1512-Second lap joint;

[0088] 1513 - First protrusion; 1514 - Second groove; 1515 - Second overlapping section;

[0089] 152 - Sidewall; 160 - Elastic element; 170 - Bottom filler adhesive;

[0090] 200 - Integrated circuit; 210 - Circuit board; 220 - Heat sink;

[0091] 230 - Second thermal interface material; 240 - Fasteners; 300 - Electronic equipment. Detailed Implementation

[0092] The terminology used in the implementation section of this application is only for explaining specific embodiments of this application and is not intended to limit this application. The implementation of the embodiments of this application will be described in detail below with reference to the accompanying drawings.

[0093] Printed circuit boards (PCBs) are the providers of electrical connections for passive electronic components. Chips are the most crucial part of electronic devices, playing a role in logic processing and controlling the normal operation of the entire system. In electronic devices, chips are mainly fixed on the PCB in the form of chip packages to ensure stable conduction between the chip inside the package and the external PCB. Flip chip technology is both a chip interconnection technology and an ideal chip bonding technology, and it has become a commonly used packaging form in high-end devices and high-density packaging fields.

[0094] A die is a chip that has been cut and tested but has not been packaged. A die typically only has solder joints for packaging and cannot be directly used in actual circuits. Because dies are extremely susceptible to the effects of external temperature, impurities, and physical forces, they are easily damaged. Therefore, they must be packaged in a space and have corresponding pins brought out before they can be used as a basic component.

[0095] In related technologies, such as Figure 1 As shown, a semiconductor device 100', such as a chip, generally includes a substrate 110', a die 120', and a package housing 140'. The die 120' is disposed on the upper surface of the substrate 110'. For example, the die 120' and the upper surface of the substrate 110' can be electrically connected directly by solder ball bonding. The package housing 140' covers the die 120', and the bottom end of the package housing 140' is sealed to the upper surface of the substrate 110'. A first thermal interface material 130' is disposed between the side of the top wall of the package housing 140' facing the substrate 110' and the side of the die 120' facing away from the substrate 110'.

[0096] However, in related technologies, the board-level architecture below the package housing 140' warps due to heat generation, causing uneven stress on the first thermal interface material 130'. This makes the first thermal interface material 130' between the die 120' and the top wall of the package housing 140' prone to delamination, which in turn increases the contact thermal resistance between the die 120' and the top wall of the package housing 140', affecting the heat dissipation effect of the die.

[0097] Based on this, this application provides a semiconductor device by setting a thermally conductive shell including a first component and a second component. The first component is disposed on the side of the die facing away from the substrate, and a first thermal interface material is disposed between the die and the first component. The second component is fixed to the substrate around the die, with the first component located in a through hole formed in the top wall of the second component. A first overlapping portion is formed on the edge of the first component near the substrate, and a second overlapping portion is formed on the top wall of the second component, so that the second overlapping portion overlaps the side of the first overlapping portion facing away from the substrate. This allows the second component to press the first component firmly onto the die. Firstly, this avoids delamination of the first thermal interface material between the die and the first component, ensuring that the contact thermal resistance between the die and the first component does not increase and guaranteeing the heat dissipation effect of the semiconductor device. Secondly, during the curing process of the first thermal interface material, no additional tooling is needed to apply pressure to the first component, simplifying the packaging operation of the semiconductor device and improving the packaging efficiency. Thirdly, this prevents the first component from falling off.

[0098] The following section, with reference to the accompanying drawings, provides a detailed description of the specific structure of this semiconductor device, integrated circuit, and electronic device.

[0099] Reference Figure 2 As shown in the embodiments of this application, a semiconductor device 100 is provided. Exemplarily, the semiconductor device 100 includes, but is not limited to, a chip. The semiconductor device 100 may include: a substrate 110, a die 120 connected to the substrate 110; a thermally conductive housing, with the die 120 located within the thermally conductive housing; and a first thermal interface material 130.

[0100] At least one passive component may also be disposed in the area of ​​the substrate 110 located within the heat-conducting housing, thereby enabling the semiconductor device 100 to integrate more components and functions, and thus improving the performance and electrical characteristics of the semiconductor device 100.

[0101] The heat-conducting housing includes a first component 140 and a second component 150. For example, both the first component 140 and the second component 150 can be heat-conducting components; or, the first component 140 can be a heat-conducting component, and the second component 150 can be selected according to actual needs.

[0102] In one possible implementation, the first component 140 and the second component 150 can be made of the same material. For example, both the first component 140 and the second component 150 can be made of copper substrate plated with nickel. In another possible implementation, the first component 140 and the second component 150 can be made of different materials, and the thermal conductivity of the first component 140 can be better than that of the second component 150, thereby improving the heat dissipation effect of the semiconductor device 100.

[0103] The second component 150 is fixed to the substrate 110 around the bare die 120. Exemplarily, the second component 150 may include a top wall 151 and a side wall 152, the top end of which is connected to the circumferential edge of the top wall 151. The side wall 152 and the top wall 151 may be integrally formed to form the second component 150. The bottom end of the side wall 152 (i.e., the bottom end of the second component 150) may be sealingly connected to the upper surface 111 of the substrate 110. Exemplarily, the bottom end of the side wall 152 and the upper surface 111 of the substrate 110 may be sealingly connected using a quick-drying adhesive. The side wall 152 surrounds the circumference of the bare die 120.

[0104] The top wall 151 of the second component 150 is provided with a through hole 1511, and the first component 140 is accommodated in the through hole 1511. In one possible implementation, the shape of the through hole 1511 includes, but is not limited to, a square, a circle, an ellipse, and a rhombus, and the shape of the first component 140 includes, but is not limited to, a square, a circle, an ellipse, and a rhombus, and the shape of the first component 140 matches the shape of the through hole 1511. For example, when the shape of the through hole 1511 is square, the shape of the first component 140 is also square; when the shape of the through hole 1511 is circular, the shape of the first component 140 is also circular; when the shape of the through hole 1511 is rhombus, the shape of the first component 140 is also rhombus.

[0105] The first component 140 and the through hole 1511 can be clearance-fitted. For example, there is a gap between the first component 140 and the through hole 1511 in a direction parallel to the substrate 110. The size of the gap can be set according to actual needs, and there is no specific limitation here, as long as it can ensure that the first component 140 can move relative to the second component 150 toward the substrate 110, or has a tendency to move toward the substrate 110, so as to ensure that the pressure applied to the first component 140 can be transmitted to the first thermal interface material 130 and prevent the first thermal interface material 130 from delaminating.

[0106] The first component 140 has a first overlapping portion 141 formed on its edge near the substrate 110, and the second component 150 has a second overlapping portion 1512 formed on its top wall. The first overlapping portion 141 overlaps with the second overlapping portion 1512, and the first overlapping portion 141 is located between the second overlapping portion 1512 and the substrate 110. It can be understood that the first component 140 and the first overlapping portion 141 are integral parts; the second component 150 and the second overlapping portion 1512 are integral parts.

[0107] Reference Figure 3 and Figure 4 As shown, in one possible implementation, the portion of the top wall 151 of the second component 150 near the through hole 1511 is directly formed as the second overlapping portion 1512, and the first overlapping portion 141 protrudes from the side of the top wall 151 of the second component 150 facing the substrate 110 and overlaps the side of the second overlapping portion 1512 facing the substrate 110.

[0108] For example, the side of the first overlapping portion 141 facing the substrate 110 can be flush with the side of the first component 140 facing the substrate, such as... Figure 3 As shown. Alternatively, the side of the first overlapping portion 141 facing the substrate 110 may protrude beyond the side of the first component 140 facing the substrate, as shown. Figure 4 As shown, at this time, the orthographic projections of the bare sheet 120 and the first thermal interface material 130 on the first component 140 can be located in the area surrounded by the first overlap 141.

[0109] Reference Figure 2 As shown, in another possible implementation, the edge of the top wall 151 of the second component 150 away from the substrate 110 is formed with a second overlapping portion 1512, which overlaps the side of the first overlapping portion 141 away from the substrate 110.

[0110] A first thermal interface material 130 is located between the first component 140 and the bare die 120, for conducting heat generated by the bare die 120 to the first component 140. In one possible implementation, the first thermal interface material 130 includes at least one of silicone grease or metallic silver. Exemplarily, the first thermal interface material 130 may be silicone grease, or it may be metallic silver, or it may include both silicone grease and metallic silver.

[0111] For example, the die 120 is located between the upper surface 111 of the substrate 110 and the side of the first component 140 facing the substrate 110, and the die 120 and the upper surface 111 of the substrate 110 can be electrically connected directly by solder ball bonding. In addition, the space between the die 120 and the substrate 110 can be filled with underfill adhesive 170, thereby ensuring not only the reliability of the electrical connection between the die 120 and the substrate 110, but also the stability of the die 120 disposed on the substrate 110.

[0112] The first thermal interface material 130 is located between the side of the die 120 facing away from the substrate 110 and the side of the first component 140 facing the substrate 110. The first thermal interface material 130 can fully fill the gap between the side of the die 120 facing away from the substrate 110 and the side of the first component 140 facing the substrate 110, reduce or even eliminate voids, thereby reducing the contact thermal resistance between the side of the die 120 facing away from the substrate 110 and the side of the first component 140 facing the substrate 110, improving the heat dissipation efficiency of the die 120, and thus helping to improve the performance of the die 120.

[0113] After the bottom end of the second component 150 is sealed to the upper surface 111 of the substrate 110, the second overlapping portion 1512 of the top wall 151 of the second component 150 can apply pressure to the first component 140 via the first overlapping portion 141 of the first component 140, so that the first component 140 is pressed tightly onto the die 120. Firstly, this prevents the first thermal interface material 130 between the die 120 and the first component 140 from delaminating, thus avoiding an increase in the contact thermal resistance between the die 120 and the first component 140 and ensuring the heat dissipation effect of the die 120. Secondly, during the curing process of the first thermal interface material 130, there is no need to apply pressure to the first component 140 using additional tooling, thereby simplifying the packaging operation of the semiconductor device 100 and improving the packaging efficiency of the semiconductor device 100. Thirdly, this prevents the first component 140 from falling off, ensuring the quality of the semiconductor device 100.

[0114] Reference Figure 5 As shown, in some embodiments of this application, the semiconductor device 100 may include a die 120, a second component 150 and a first component 140. In this case, the top wall 151 of the second component 150 is provided with a through hole 1511, the first component 140 is accommodated in the through hole 1511, the die 120 is disposed on the side of the first component 140 facing the substrate, and a first thermal interface material 130 is disposed between the die 120 and the first component 140.

[0115] Reference Figure 6 As shown, in some other embodiments of this application, the semiconductor device 100 may include at least two dies 120, each die 120 being connected to the substrate 110. The thermally conductive housing includes a second component 150 and at least two first components 140. In this case, the top wall 151 of the second component 150 is provided with at least two through holes 1511, which may be spaced apart. The at least two first components 140 are respectively housed within the at least two through holes 1511. The at least two dies 120 are respectively disposed on the side of the at least two first components 140 facing the substrate. A first thermal interface material 130 is provided on the side of each die 120 facing the first component 140. Thus, when at least two dies 120 are packaged in the semiconductor device 100, it is ensured that the first thermal interface material 130 on the side of the at least two dies 120 facing away from the substrate 110 will not delaminate, thereby ensuring the heat dissipation effect of the at least two dies 120.

[0116] The side of the first component 140 facing away from the substrate 110 can be higher than the side of the top wall 151 of the second component 150 facing away from the substrate 110. This allows the heat sink 220 or other components disposed on the side of the first component 140 facing away from the substrate 110 to utilize the height difference between the side of the first component 140 facing away from the substrate 110 and the side of the top wall 151 of the second component 150 facing away from the substrate 110 to better press the first component 140 onto the die 120. This can better prevent the first thermal interface material 130 between the die 120 and the first component 140 from delaminating, further preventing an increase in the contact thermal resistance between the die 120 and the component, and further ensuring the heat dissipation effect of the die 120.

[0117] In one possible implementation, the height H of the side of the first component 140 facing away from the substrate 110 above the side of the top wall 151 of the second component 150 facing away from the substrate 110 ranges from 0.5 mm to 1 mm, ensuring that the height of the side of the first component 140 facing away from the substrate 110 above the side of the top wall 151 of the second component 150 facing away from the substrate 110 is within a suitable range. On the one hand, this avoids the side of the first component 140 facing away from the substrate 110 being too low above the side of the top wall 151 of the second component 150 facing away from the substrate 110, which would affect the effect of the heat sink 220 or other components disposed on the side of the first component 140 facing away from the substrate 110 pressing the first component 140 onto the bare die 120; on the other hand, this avoids the side of the first component 140 facing away from the substrate 110 being too high above the side of the top wall 151 of the second component 150 facing away from the substrate 110, thus avoiding occupying too much space.

[0118] For example, the height of the side of the first component 140 facing away from the substrate 110 above the side of the top wall 151 of the second component 150 facing away from the substrate 110 can be set to any value between 0.5mm, 0.6mm, 0.7mm, 0.8mm, 0.9mm, 1mm or 0.5mm to 1mm as needed.

[0119] In one possible implementation, the orthographic projection of the side of the die 120 facing away from the substrate 110 onto the substrate 110 is located within the orthographic projection range of the side of the first component 140 facing the substrate 110 onto the substrate 110, so that the side of the first component 140 facing the substrate 110 completely covers the side of the die 120 facing away from the substrate 110, thereby increasing the contact area between the die 120 and the first component 140 and improving the heat dissipation effect.

[0120] For example, the area of ​​the side of the die 120 facing away from the substrate 110 may be smaller than the area of ​​the side of the first component 140 facing the substrate 110, or the area of ​​the side of the die 120 facing away from the substrate 110 may be equal to the area of ​​the side of the first component 140 facing the substrate 110.

[0121] In one possible implementation, the orthographic projection of the side of the die 120 facing away from the substrate 110 onto the substrate 110 is located within the orthographic projection range of the side of the first component 140 facing away from the substrate 110 onto the substrate 110. This ensures that the side of the first component 140 facing away from the substrate 110 completely covers the side of the die 120 facing away from the substrate 110, thereby uniformly transmitting the pressure on the side of the first component 140 facing away from the substrate 110 to the side of the die 120 facing away from the substrate 110. This ensures the effect of the first component 140 pressing the die 120 firmly and avoids stress concentration in local areas of the die 120.

[0122] For example, the area of ​​the side of the die 120 facing away from the substrate 110 may be smaller than the area of ​​the side of the first component 140 facing away from the substrate 110, or the area of ​​the side of the die 120 facing away from the substrate 110 may be equal to the area of ​​the side of the first component 140 facing away from the substrate 110.

[0123] In one possible implementation, the side of the first overlapping portion 141 facing the substrate 110 is flush with the side of the first component 140 facing the substrate 110, so as to ensure the adhesion effect between the side of the first component 140 facing the substrate 110 and the side of the bare die 120 away from the substrate 110, thereby helping to ensure heat dissipation.

[0124] The side of the first overlapping portion 141 facing away from the substrate 110 is located between the side of the first component 140 facing away from the substrate 110 and the side of the first component 140 facing the substrate 110. On the one hand, when the second overlapping portion 1512 overlaps the side of the first overlapping portion 141 facing away from the substrate 110, it can be ensured that the side of the first component 140 facing away from the substrate 110 is higher than the side of the second component 150 facing away from the substrate 110; on the other hand, it is convenient to limit the second overlapping portion 1512 in a direction parallel to the substrate 110 when the second overlapping portion 1512 overlaps the side of the first overlapping portion 141 facing away from the substrate 110.

[0125] In one possible implementation, the side of the second overlapping portion 1512 facing away from the substrate 110 is flush with the side of the top wall 151 of the second component 150 facing away from the substrate 110. This is to prevent the side of the second overlapping portion 1512 facing away from the substrate 110 from interfering with the pressure of the heat sink 220 or other components disposed on the side of the first component 140 facing away from the substrate 110 when the second overlapping portion 1512 overlaps the side of the first overlapping portion 141 facing away from the substrate 110. This ensures that the heat sink 220 or other components disposed on the side of the first component 140 facing away from the substrate 110 can press the first component 140 firmly onto the bare die 120.

[0126] The side of the second overlapping portion 1512 facing the substrate 110 is located between the side of the top wall 151 of the second component 150 facing away from the substrate 110 and the side of the top wall 151 of the second component 150 facing the substrate 110. On the one hand, when the side of the second overlapping portion 1512 facing the substrate 110 overlaps the side of the first overlapping portion 141 facing away from the substrate 110, it can be ensured that the side of the second component 150 facing away from the substrate 110 is lower than the side of the first component 140 facing away from the substrate 110. On the other hand, it facilitates limiting the first overlapping portion 141 in a direction parallel to the substrate 110 when the side of the second overlapping portion 1512 facing the substrate 110 overlaps the side of the first overlapping portion 141 facing away from the substrate 110.

[0127] Reference Figure 7 As shown, in some embodiments of this application, the side of the first overlapping portion 141 facing away from the substrate 110 can extend horizontally, and the side of the second overlapping portion 1512 facing the substrate 110 can extend horizontally. On the one hand, this allows the side of the first overlapping portion 141 facing away from the substrate 110 and the side of the second overlapping portion 1512 facing the substrate 110 to fit together better, so that pressure is transmitted evenly through the bonding surface; on the other hand, it helps to ensure that the thickness and strength of the first overlapping portion 141 and the second overlapping portion 1512 are uniform.

[0128] Reference Figure 8 and Figure 9 As shown, in some other embodiments of this application, the side of the second overlapping portion 1512 facing the substrate 110 can extend obliquely from the second component 150 toward the first component 140; the side of the first overlapping portion 141 facing away from the substrate 110 can extend obliquely from the second component 150 toward the first component 140; the oblique direction and oblique angle of the side of the second overlapping portion 1512 facing the substrate 110 correspond to the oblique direction and oblique angle of the side of the first overlapping portion 141 facing away from the substrate 110. On the one hand, this allows for better fit and positioning of the side of the first overlapping portion 141 facing away from the substrate 110 and the side of the second overlapping portion 1512 facing the substrate 110; on the other hand, it facilitates positioning of the first component 140 and the second component 150 along a direction parallel to the substrate 110.

[0129] For example, refer to Figure 8 As shown, the first overlapping portion 141 extends obliquely on the side facing away from the substrate 110 to form a first overlapping slope. The distance between the side of the first overlapping slope near the first component 140 and the substrate 110 is smaller than the distance between the side of the first overlapping slope near the second component 150 and the substrate 110. The second overlapping portion 1512 extends obliquely on the side facing the substrate 110 to form a second overlapping slope. The distance between the side of the second overlapping slope near the first component 140 and the substrate 110 is smaller than the distance between the side of the second overlapping slope near the second component 150 and the substrate 110.

[0130] For example, refer to Figure 9 As shown, the first overlapping portion 141 extends obliquely on the side facing away from the substrate 110 to form a first overlapping slope. The distance between the side of the first overlapping slope near the first component 140 and the substrate 110 is greater than the distance between the side of the first overlapping slope near the second component 150 and the substrate 110. The second overlapping portion 1512 extends obliquely on the side facing the substrate 110 to form a second overlapping slope. The distance between the side of the second overlapping slope near the first component 140 and the substrate 110 is greater than the distance between the side of the second overlapping slope near the second component 150 and the substrate 110.

[0131] Reference Figure 10 As shown in some embodiments of this application, the second overlapping portion 1512 has a first protrusion 1513 on the side facing the substrate 110, and the first overlapping portion 141 has a first groove 142 on the side facing away from the substrate 110, with the first protrusion 1513 accommodated within the first groove 142. Exemplarily, the cross-sectional shape of the first protrusion 1513 includes, but is not limited to, triangles, squares, and semicircles; the shape of the first groove 142 can match the shape of the first protrusion 1513, and the cross-sectional shape of the first groove 142 includes, but is not limited to, triangles, squares, and semicircles.

[0132] In one possible implementation, the first protrusion 1513 may extend synchronously with the second overlapping portion 1512 along the edge of the through hole 1511. In this case, the first groove 142 and the first protrusion 1513 extend on the side of the first overlapping portion 141 away from the substrate 110.

[0133] In another possible implementation, the first protrusion 1513 can be arranged circumferentially along the through hole 1511 on the side of the second overlapping portion 1512 facing the substrate 110. In this case, the first groove 142 can be arranged at intervals on the side of the first overlapping portion 141 away from the substrate 110, corresponding to the first protrusion 1513, or can extend therefrom.

[0134] In other embodiments of this application, a second protrusion 143 is provided on the side of the first overlapping portion 141 facing away from the substrate 110, and a second groove 1514 is provided on the side of the second overlapping portion 1512 facing the substrate 110, with the second protrusion 143 accommodated within the second groove 1514. Exemplarily, the cross-sectional shape of the second protrusion 143 includes, but is not limited to, triangles, squares, and semicircles; the shape of the second groove 1514 can match the shape of the second protrusion 143, and the cross-sectional shape of the second groove 1514 includes, but is not limited to, triangles, squares, and semicircles.

[0135] In one possible implementation, the second protrusion 143 may extend synchronously with the first overlap 141 along the edge of the first component 140. In this case, the second groove 1514 and the second protrusion 143 extend correspondingly to the side of the second overlap 1512 facing the substrate 110.

[0136] In another possible implementation, the second protrusions 143 may be arranged at intervals along the circumference of the first component 140 on the side of the first overlap portion 141 facing away from the substrate 110. In this case, the second grooves 1514 may be arranged at intervals on the side of the second overlap portion 1512 facing the substrate 110 in correspondence with the second protrusions 143, or may extend therefrom.

[0137] In some embodiments of this application, the side of the first overlapping portion 141 facing away from the substrate 110 is provided with a first groove 142 and a second protrusion 143, and the side of the second overlapping portion 1512 facing the substrate 110 is provided with a first protrusion 1513 and a second groove 1514. The first protrusion 1513 is accommodated in the first groove 142, and the second protrusion 143 is accommodated in the second groove 1514. The shape and arrangement of the first protrusion 1513, the first groove 142, the second protrusion 143, and the second groove 1514 can be referred to the description above, and will not be repeated here.

[0138] In this embodiment, a mutually cooperating protrusion and groove are provided on the side of the first overlapping portion 141 facing away from the substrate 110 and the side of the second overlapping portion 1512 facing the substrate 110. When the side of the second overlapping portion 1512 facing the substrate 110 overlaps the side of the first overlapping portion 141 facing away from the substrate 110, the protrusion is accommodated in the groove, thereby allowing for better positioning of the first component 140 and the second component 150 in a direction parallel to the substrate 110.

[0139] Reference Figure 11 As shown, in one possible implementation, an elastic member 160 is provided between the overlap of the first overlapping portion 141 and the second overlapping portion 1512. That is, the elastic member 160 is provided between the side of the second overlapping portion 1512 facing the substrate 110 and the side of the first overlapping portion 141 facing away from the substrate 110. The second component 150 can provide pre-pressure to the first component 140 through the elastic member 160, so that the first component 140 is better pressed onto the bare sheet 120, thereby helping to prevent the first thermal interface material 130 from delaminating. Exemplarily, the elastic member 160 includes, but is not limited to, springs, elastic pads, and elastic adhesives.

[0140] Reference Figure 12As shown, in one possible implementation, the elastic member 160 may extend circumferentially along the through hole 1511 between the side of the second overlap 1512 facing the substrate 110 and the side of the first overlap 141 facing away from the substrate 110; exemplaryly, the elastic member 160 may be an annular elastic member formed of an elastic pad or elastic adhesive.

[0141] Reference Figure 13 As shown, in another possible implementation, the elastic element 160 may be arranged circumferentially between the side of the second overlapping portion 1512 facing the substrate 110 and the side of the first overlapping portion 141 facing away from the substrate 110; for example, the elastic element 160 may include a plurality of helical springs; or, the elastic element 160 may include a plurality of dot-shaped elastic pads or dot-shaped elastic adhesives.

[0142] In one possible implementation, the first overlapping portion 141 surrounds the edge of the first component 140, as shown in the figure. Figure 14 As shown. Alternatively, the first overlapping portion 141 includes a plurality of first overlapping segments 1411, which are arranged at intervals along the circumference of the first component 140, as shown in the figure. Figure 15 As shown. This increases the flexibility of the first overlapping part 141 in setting, so as to adapt to different application scenarios.

[0143] In one possible implementation, the second overlapping portion 1512 surrounds the edge of the through hole 1511, as shown in the figure. Figure 16 As shown. Alternatively, the second overlapping portion 1512 includes a plurality of second overlapping segments 1515, which are arranged at circumferential intervals along the through hole 1511, as shown in the figure. Figure 17 As shown. This increases the flexibility of the second overlapping part 1512 to adapt to different application scenarios.

[0144] In a specific implementation, when the first overlapping portion 141 includes a plurality of first overlapping segments 1411, and the plurality of first overlapping segments 1411 are arranged at intervals along the circumference of the first component 140, the second overlapping portion 1512 surrounds the edge of the through hole 1511; or, when the second overlapping portion 1512 includes a plurality of second overlapping segments 1515, and the plurality of second overlapping segments 1515 are arranged at intervals along the circumference of the through hole 1511, the first overlapping portion 141 surrounds the edge of the first component 140, thereby helping to reduce the gap at the joint position of the first component 140 and the second component 150.

[0145] In one possible implementation, the width W2 of the second overlapping portion 1512 extending from the second component 150 toward the first component 140 ranges from 2mm to 3mm, so as to ensure that the width of the overlap between the second overlapping portion 1512 and the first overlapping portion 141 is within a suitable range. On the one hand, it can avoid the overlap width between the second overlapping portion 1512 and the first overlapping portion 141 being too small, which would affect the overlap stability and pressure transmission effect of the second overlapping portion 1512 and the first overlapping portion 141; on the other hand, it can avoid the width of the second overlapping portion 1512 being too large, which would affect the structural strength of the second component 150.

[0146] For example, the width of the second overlap 1512 extending from the second component 150 toward the first component 140 can be set to any value between 2mm, 2.2mm, 2.4mm, 2.6mm, 2.8mm, 3mm or 2mm to 3mm as needed.

[0147] In one possible implementation, the width W1 of the first overlapping portion 141 extending from the first component 140 toward the second component 150 ranges from 2mm to 3mm, so as to ensure that the width of the overlap between the first overlapping portion 141 and the second overlapping portion 1512 is within a suitable range. On the one hand, it can avoid the overlap width between the first overlapping portion 141 and the second overlapping portion 1512 being too small, which would affect the overlap stability and pressure transmission effect of the first overlapping portion 141 and the second overlapping portion 1512; on the other hand, it can avoid the width of the first overlapping portion 141 being too large, which would affect the structural strength of the first component 140.

[0148] This application provides a specific semiconductor device 100, wherein the die 120 has a size of 35mm*35mm and a power consumption of 300W; the first component 140 has a size of 40mm*40mm; the second component 150 has an outer perimeter size of 75mm*75mm; the width of the first overlapping portion 141 and the second overlapping portion 1512 is both in the range of 2mm to 3mm; the side of the first component 140 facing away from the substrate 110 is higher than the side of the second component 150 facing away from the substrate 110, and the height difference ranges from 0.5mm to 1mm.

[0149] Reference Figures 18 to 22 As shown in the embodiments of this application, a method for fabricating a semiconductor device is also provided. The method for fabricating the semiconductor device includes:

[0150] S100: Provides a substrate 110, a die 120, a first component 140, and a second component 150.

[0151] S200: Electrically connect the side of the bare die 120 facing the substrate 110 to the upper surface 111 of the substrate 110. (Refer to...) Figure 19 As shown.

[0152] For example, the side of the die 120 facing the substrate 110 and the upper surface 111 of the substrate 110 can be soldered together to achieve electrical connection; then, the underfill adhesive 170 can be filled between the side of the die 120 facing the substrate 110 and the upper surface 111 of the substrate 110.

[0153] S300: A first thermal interface material 130 is provided on the side of the bare die 120 facing away from the substrate 110. (Refer to...) Figure 20 As shown.

[0154] The first thermal interface material 130 can be coated on the side of the bare die 120 that is away from the substrate 110.

[0155] S400: The first component 140 is positioned on the side of the first thermal interface material 130 facing away from the bare sheet 120. (Refer to...) Figure 21 As shown.

[0156] S500: The second component 150 is disposed circumferentially around the first component 140 and the bare die 120. (Refer to...) Figure 22 As shown.

[0157] The second component 150 has a through hole 1511 on its top wall 151, and the first component 140 is accommodated in the through hole 1511. The edge of the first component 140 near the substrate 110 has a first overlapping portion 141, and the top wall 151 of the second component 150 has a second overlapping portion 1512, which overlaps the side of the first overlapping portion 141 that is away from the substrate 110.

[0158] S600: The bottom end of the second component 150 is sealed to the upper surface 111 of the substrate 110.

[0159] For example, the bottom end of the second component 150 can be sealed to the upper surface 111 of the substrate 110 with a quick-drying adhesive to ensure the stability of the second component 150. At this time, the second component 150 can press the first component 140, causing the first thermal interface material 130 to gradually solidify, thereby eliminating the need for additional tooling to apply pressure to the first component 140, which simplifies the packaging operation of the die 120 and improves the packaging efficiency of the die 120.

[0160] Reference Figure 23 As shown in the figure, this application embodiment also provides an integrated circuit 200. The integrated circuit 200 includes a circuit board 210, a heat sink 220, a second thermal interface material 230, and at least one semiconductor device 100. The semiconductor device 100 is connected to the circuit board 210, the heat sink 220 is used to dissipate heat from the semiconductor device 100, and the second thermal interface material 230 is located between the semiconductor device 100 and the heat sink 220.

[0161] For example, the substrate 110 of the semiconductor device 100 is electrically connected to the circuit board 210, for example, by directly soldering solder balls.

[0162] The heat sink 220 can be disposed on the side of the first component 140 and the second component 150 of the semiconductor device 100 facing away from the substrate 110, and the heat sink 220 is fixedly connected to the circuit board 210. For example, the heat sink 220 and the circuit board 210 can be fixedly connected by fasteners 240, such as screws. The side of the heat sink 220 facing the first component 140 and the second component 150 can be a plane, and the side of the heat sink 220 facing away from the first component 140 and the second component 150 can be provided with heat dissipation fins.

[0163] The second thermal interface material 230 may be located at least between the side of the first component 140 facing away from the substrate 110 and the side of the heat sink 220 facing the substrate 110. Exemplarily, the second thermal interface material 230 includes at least one of a carbon fiber thermal pad, gel, silicone grease, or phase change thermal conductive material. The second thermal interface material 230 may be coated or directly placed on the side of the first component 140 facing away from the substrate 110. The second thermal interface material 230 may be located only between the side of the first component 140 facing away from the substrate 110 and the side of the heat sink 220 facing the substrate 110; the second thermal interface material 230 may also be located simultaneously between the side of the first component 140 facing away from the substrate 110 and the side of the heat sink 220 facing the substrate 110, and between the side of the second component 150 facing away from the substrate 110 and the side of the heat sink 220 facing the substrate 110.

[0164] The integrated circuit 200 provided in this application embodiment connects the semiconductor device 100 to the circuit board 210, places the heat sink 220 close to the semiconductor device 100, and places the second thermal interface material 230 between the semiconductor device 100 and the heat sink 220. This not only allows the heat sink 220 to better dissipate heat from the semiconductor device 100, thereby improving the performance of the semiconductor device 100, but also allows the heat sink 220 to be placed on the side of the first component 140 facing away from the substrate 110, so that the heat sink 220 can provide uniform and stable pressure to the first component 140, further preventing the first thermal interface material 130 between the first component 140 and the die 120 from delamination, and ensuring the heat dissipation effect of the die 120.

[0165] Furthermore, since the integrated circuit 200 includes the aforementioned semiconductor device 100, the integrated circuit 200 has the features and effects of the aforementioned semiconductor device 100.

[0166] Reference Figure 24 As shown in the figure, this application embodiment also provides an electronic device 300. The electronic device 300 includes at least the aforementioned integrated circuit 200.

[0167] The electronic device 300 provided in this application embodiment is provided with the aforementioned integrated circuit 200 having semiconductor device 100. Since the integrated circuit 200 has a better heat dissipation effect, the die 120 in the integrated circuit 200 has a higher and more stable performance, thereby making the electronic device 300 have a higher and more stable performance. This not only helps to optimize the user experience of the electronic device 300, but also helps to ensure the stability of signal transmission in the electronic device 300 and ensure the normal operation of the electronic device 300.

[0168] In some embodiments of this application, the electronic device 300 may be a server, or the electronic device 300 may be a mobile terminal or fixed terminal such as a mobile phone or tablet equipped with a semiconductor device 100.

[0169] By incorporating the aforementioned integrated circuit 200 with semiconductor device 100 into the server, the bare die 120 within the integrated circuit 200 exhibits superior heat dissipation, resulting in higher and more stable performance. Consequently, the server's performance is also enhanced and stabilized. This not only optimizes the server's user experience but also ensures the stability of signal transmission within the server, guaranteeing its normal operation.

[0170] In the description of the embodiments of this application, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, an indirect connection through an intermediate medium, or the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of this application according to the specific circumstances.

[0171] The terms "first," "second," "third," "fourth," etc. (if present) in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence.

[0172] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the embodiments of this application, and are not intended to limit them. Although the embodiments of this application have been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features. These modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A semiconductor device, characterized in that, include: substrate; The bare die is connected to the substrate; A heat-conducting housing, wherein the bare die is located within the heat-conducting housing; as well as First thermal interface material; wherein: The thermally conductive housing includes: a first component and a second component; the second component is fixed to the substrate around the bare sheet, and the first component is located in a through hole formed in the top wall of the second component; a first overlap portion is formed on the edge of the first component near the substrate, and a second overlap portion is formed on the top wall of the second component; the first overlap portion overlaps with the second overlap portion, the first overlap portion is located between the second overlap portion and the substrate, and the second overlap portion applies pressure to the first component through the first overlap portion to press the first component tightly onto the bare sheet; a first thermal interface material is located between the first component and the bare sheet for conducting the heat generated by the bare sheet to the first component; The side of the first component facing away from the substrate is higher than the side of the top wall of the second component facing away from the substrate; The orthographic projection of the side of the die facing away from the substrate onto the substrate is located within the orthographic projection range of the side of the first component facing away from the substrate onto the substrate. The second overlapping portion extends obliquely from the second component toward the first component on the side facing the substrate; the first overlapping portion extends obliquely from the second component toward the first component on the side away from the substrate; the oblique direction and oblique angle of the second overlapping portion facing the substrate correspond to the oblique direction and oblique angle of the first overlapping portion away from the substrate.

2. The semiconductor device according to claim 1, characterized in that, The second overlap portion is formed on the edge of the top wall of the second component away from the substrate.

3. The semiconductor device according to any one of claims 1-2, characterized in that, The orthographic projection of the side of the die facing away from the substrate onto the substrate is located within the orthographic projection range of the side of the first component facing the substrate onto the substrate.

4. The semiconductor device according to any one of claims 1-2, characterized in that, An elastic element is provided between the overlap of the first overlap and the second overlap.

5. The semiconductor device according to claim 3, characterized in that, An elastic element is provided between the overlap of the first overlap and the second overlap.

6. The semiconductor device according to any one of claims 1-2 and 5, characterized in that, An underfill adhesive is provided between the bare die and the substrate.

7. The semiconductor device according to claim 3, characterized in that, An underfill adhesive is provided between the bare die and the substrate.

8. The semiconductor device according to claim 4, characterized in that, An underfill adhesive is provided between the bare die and the substrate.

9. The semiconductor device according to any one of claims 1-2, 5, and 7-8, characterized in that, The first component is made of the same material as the second component; or, The first component is made of a different material than the second component, and the thermal conductivity of the first component is better than that of the second component.

10. The semiconductor device according to claim 3, characterized in that, The first component is made of the same material as the second component; or, The first component is made of a different material than the second component, and the thermal conductivity of the first component is better than that of the second component.

11. The semiconductor device according to claim 4, characterized in that, The first component is made of the same material as the second component; or, The first component is made of a different material than the second component, and the thermal conductivity of the first component is better than that of the second component.

12. The semiconductor device according to claim 6, characterized in that, The first component is made of the same material as the second component; or, The first component is made of a different material than the second component, and the thermal conductivity of the first component is better than that of the second component.

13. The semiconductor device according to any one of claims 1-2, 5, 7-8, and 10-12, characterized in that, The first thermal interface material includes at least one of silicone grease or metallic silver.

14. The semiconductor device according to claim 3, characterized in that, The first thermal interface material includes at least one of silicone grease or metallic silver.

15. The semiconductor device according to claim 4, characterized in that, The first thermal interface material includes at least one of silicone grease or metallic silver.

16. The semiconductor device according to claim 6, characterized in that, The first thermal interface material includes at least one of silicone grease or metallic silver.

17. The semiconductor device according to claim 9, characterized in that, The first thermal interface material includes at least one of silicone grease or metallic silver.

18. The semiconductor device according to any one of claims 1-2, 5, 7-8, 10-12, and 14-17, characterized in that, The semiconductor device includes a chip.

19. The semiconductor device according to claim 3, characterized in that, The semiconductor device includes a chip.

20. The semiconductor device according to claim 4, characterized in that, The semiconductor device includes a chip.

21. The semiconductor device according to claim 6, characterized in that, The semiconductor device includes a chip.

22. The semiconductor device according to claim 9, characterized in that, The semiconductor device includes a chip.

23. The semiconductor device according to claim 13, characterized in that, The semiconductor device includes a chip.

24. An integrated circuit, characterized in that, include: Circuit board, heat sink, second thermal interface material, and at least one semiconductor device as claimed in any one of claims 1 to 23; The semiconductor device is connected to the circuit board; The heat sink is used to dissipate heat from the semiconductor device; The second thermal interface material is located between the semiconductor device and the heat sink.

25. The integrated circuit according to claim 24, characterized in that, The second thermal interface material includes at least one of carbon fiber thermal pads, gels, silicone grease, or phase change thermal conductive materials.

26. An electronic device, characterized in that, It includes at least the integrated circuit as described in claim 24 or 25.

27. The electronic device according to claim 26, characterized in that, The electronic device includes a server.

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