Display panel and method for manufacturing the same

Abstract

The present application discloses a display panel and a preparation method thereof; the display panel comprises a substrate, a light-emitting device arranged on the substrate, and an inorganic layer arranged on the light-emitting device; wherein the inorganic layer comprises an inorganic material doped with a quantum dot compound; the present application forms an inorganic layer on the light-emitting device, and the inorganic layer comprises an inorganic material doped with a quantum dot compound, wherein the quantum dot compound can serve as a nucleation site for the inorganic layer, and can regulate the growth process of the inorganic layer from a molten state to a solid state, thereby accelerating the flow of the fluidized inorganic material doped with the quantum dot compound, thereby reducing or removing the elements or pinhole defects existing in the inorganic layer, thereby forming a highly dense inorganic layer, preventing external water and oxygen from invading the light-emitting device through the above elements or pinhole defects, and further improving the stability of the display panel.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display panel and a method for preparing the same. Background Art

[0002] Organic light-emitting display devices are self-emitting devices and not only provide wide viewing angles and excellent contrast, but also have characteristics such as fast response time, excellent brightness, excellent driving voltage, and excellent response speed. Since organic light-emitting devices are very susceptible to external environments such as oxygen and moisture, they must be encapsulated.

[0003] Existing display panels can effectively prevent corrosion from water and oxygen by preparing an inorganic film with high transmittance on the light-emitting layer. However, the existing inorganic film generally forms defects such as elements or pinholes, which are channels for the movement of water and oxygen, resulting in increasingly serious dark spots on the display panel, which in turn shortens the life of the display panel. Summary of the invention

[0004] The present application provides a display panel and a method for manufacturing the same, so as to solve the technical problem that an inorganic layer used for encapsulating light-emitting devices in an existing display panel has pinhole defects.

[0005] To solve the above-mentioned problems, the technical solutions provided by this application are as follows:

[0006] The present application provides a display panel, the display panel comprising a substrate, a light-emitting device disposed on the substrate, and an inorganic layer disposed on the light-emitting device;

[0007] Wherein, the inorganic layer includes an inorganic material doped with a quantum dot compound.

[0008] In the display panel of the present application, the quantum dot compound includes any one of cadmium selenide quantum dots, cadmium sulfide quantum dots, lead sulfide quantum dots, cadmium telluride quantum dots and nanocrystal quantum dots.

[0009] In the display panel of the present application, when the inorganic layer is in a molten state, the concentration of the quantum dot compound is between 0.01 mg / ml and 5 mg / ml.

[0010] In the display panel of the present application, the particle size of the quantum dot compound is between 3 nm and 5 nm.

[0011] In the display panel of the present application, the inorganic layer further includes quantum dot ligands, and the quantum dot ligands include any one of thioglycolic acid, mercaptopropionic acid, mercaptobutyric acid, mercaptoethylamine, oleylamine and oleic acid.

[0012] In the display panel of the present application, the inorganic layer further includes at least one of tin oxide, phosphorus oxide, boron phosphate, tin fluoride, niobium oxide, lead fluoride, silicon oxide, tungsten oxide, indium oxide, bismuth oxide, zinc oxide and boron oxide.

[0013] The present application also proposes a method for preparing a display panel, which comprises:

[0014] Preparing a plurality of light-emitting devices on a substrate;

[0015] An inorganic layer is formed on the light emitting device, the inorganic layer including an inorganic material doped with a quantum dot compound.

[0016] In the method for preparing a display panel of the present application, the step of forming an inorganic layer on the light-emitting device further comprises:

[0017] forming a preliminary inorganic film on the light-emitting device, wherein the preliminary inorganic film comprises an inorganic material doped with a quantum dot compound;

[0018] heating the prepared inorganic film to make the prepared inorganic film in a molten state;

[0019] The preliminary inorganic film in a molten state is cooled to obtain the inorganic layer.

[0020] In the method for preparing a display panel of the present application, the step of forming an inorganic layer on the light-emitting device further comprises:

[0021] A capping layer is formed on the light emitting device, wherein the capping layer is disposed between the light emitting device and the inorganic layer.

[0022] In the method for preparing the display panel of the present application, the light-emitting device includes a first electrode disposed on the substrate, a light-emitting functional layer disposed on the first electrode, and a second electrode disposed on the light-emitting functional layer.

[0023] Beneficial effects: The present application discloses a display panel and a method for preparing the same; the display panel comprises a substrate, a light-emitting device disposed on the substrate, and an inorganic layer disposed on the light-emitting device; wherein the inorganic layer comprises an inorganic material doped with a quantum dot compound; the present application forms the inorganic layer on the light-emitting device, and the inorganic layer comprises an inorganic material doped with a quantum dot compound, wherein the quantum dot compound can serve as a nucleation site for the inorganic layer, and can regulate the growth process of the inorganic layer from a molten state to a solid state, thereby accelerating the flow of the fluidized inorganic material doped with the quantum dot compound, thereby reducing or removing the elements or pinhole defects in the inorganic layer, and further forming a highly dense inorganic layer, thereby preventing external water and oxygen from invading the light-emitting device through the above-mentioned elements or pinhole defects, and further improving the stability of the display panel. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] The technical solution and other beneficial effects of the present application will be made apparent by describing in detail the specific implementation methods of the present application in conjunction with the accompanying drawings.

[0025] Figure 1 A cross-sectional view of a display panel for this application;

[0026] Figure 2 A schematic diagram of the principle of preparing a defect-free inorganic layer in the display panel of the present application;

[0027] Figure 3 A step diagram of a method for preparing a display panel of the present application;

[0028] Figures 4A to 4B This is a process diagram of the method for preparing the display panel of the present application. DETAILED DESCRIPTION

[0029] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0030] See also Figure 1 to Figure 2 , the present application provides a display panel, comprising a substrate, a light-emitting device disposed on the substrate, and an inorganic layer disposed on the light-emitting device;

[0031] Wherein, the inorganic layer includes an inorganic material doped with a quantum dot compound.

[0032] The present application forms the inorganic layer on the light-emitting device, and the inorganic layer includes an inorganic material doped with a quantum dot compound, wherein the quantum dot compound can serve as a nucleation site for the inorganic layer, and can regulate the growth process of the inorganic layer from a molten state to a solid state, thereby accelerating the flow of the fluidized inorganic material doped with the quantum dot compound, thereby reducing or removing the elements or pinhole defects in the inorganic layer, and further forming a highly dense inorganic layer, thereby preventing external water and oxygen from invading the light-emitting device through the above-mentioned elements or pinhole defects, and further improving the stability of the display panel.

[0033] The technical solution of the present application is now described in conjunction with specific embodiments.

[0034] See also Figure 1 , Figure 1 is a cross-sectional view of a display panel 10 of the present application; wherein the display panel 10 comprises a substrate 11, a light emitting device 12 disposed on the substrate 11, and an inorganic layer 14 disposed on the light emitting device 12;

[0035] The inorganic layer 14 includes an inorganic material doped with a quantum dot compound.

[0036] In the embodiment of the present application, the substrate 11 may include a substrate and a thin film crystal layer located on the substrate. The substrate may be formed of a material having excellent mechanical strength, excellent thermal stability, excellent surface flatness, excellent ease of handling, and excellent waterproofness.

[0037] Preferably, the substrate may be formed of a rigid material such as glass, plastic, metal or carbon fiber. Alternatively, when the organic light emitting display device is flexible, the substrate may be formed of a flexible material such as polyimide (PI) or polyethylene terephthalate (PET).

[0038] In this embodiment, the thin film transistor layer is used to drive the display panel 10 to emit light, and the thin film transistor layer may include a plurality of thin film transistors. The thin film transistor may be of an etching barrier type, a back channel etching type, etc., and there is no specific limitation.

[0039] In this embodiment, the light emitting device 12 includes a first electrode 121 disposed on the substrate 11 , a light emitting functional layer 122 disposed on the first electrode 121 , and a second electrode 123 disposed on the light emitting functional layer 122 .

[0040] Specifically, the first electrode 121 can be formed by arranging the first electrode 121 material on the substrate 11 by a deposition method or a sputtering method. When the first electrode 121 is an anode, the first electrode 121 material can be a material with a high work function, so that hole injection is easy. According to the type of the organic light-emitting display device, the first electrode 121 can be a reflective electrode, a semi-reflective electrode or a transmissive electrode. The first electrode 121 material can be transparent and has excellent conductivity of indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO2) or zinc oxide (ZnO). Optionally, when magnesium (Mg), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In) or magnesium-silver (Mg-Ag) is used, the first electrode 121 can be a reflective electrode.

[0041] Preferably, the first electrode 121 may have a single-layer structure or a multi-layer structure of two or more layers. For example, the first electrode 121 may have a three-layer structure of ITO / Ag / ITO to obtain a top emission device, but is not limited thereto.

[0042] In this embodiment, the light-emitting functional layer 122 includes a hole injection layer 1221 (HIL) disposed on the first electrode 121, a hole transport layer 1222 (HTL) disposed on the hole injection layer 1221, a light-emitting material layer 1223 (EML) disposed on the hole transport layer 1222, an electron transport layer 1224 (ETL) disposed on the light-emitting material layer 1223, and an electron injection layer 1225 (EIL) disposed on the electron transport layer 1224.

[0043] In this embodiment, the second electrode 123 can be a cathode as an electron injection electrode. In this case, the second electrode 123 can be formed of a metal, alloy, conductive compound or a mixture thereof having a low work function. For example, a reflective electrode, a semi-reflective electrode or a transmissive electrode can be obtained by forming a thin film using Li, Mg, Al, Al-Li, Ca, Mg-In or Mg-Ag. However, various modifications can be made to the second electrode 123. For example, a transmissive electrode formed of ITO or IZO can be formed to obtain a top emission device. Preferably, the second electrode 123 can be Mg3Ag7.

[0044] In this embodiment, a capping layer 13 (CPL) is further disposed on the second electrode 123. When the inorganic layer 14 is formed on the light-emitting device 12 by thin film encapsulation, the capping layer 13 can be used as a protective layer for preventing the second electrode 123 from being damaged.

[0045] When the light emitting device 12 is a top emission type that emits light toward the second electrode 123, the capping layer 13 is formed of a transparent material having a high refractive index, thereby performing refractive index matching. For example, the capping layer 13 may be formed of at least one of LiF, Liq, and Alq3. The capping layer 13 may be a uniform film, thereby sealing the entire light emitting device 12.

[0046] Specifically, the capping layer 13 may be formed by a resistance heating deposition method, a sputtering method, a vacuum deposition method, a low temperature deposition method, an electron beam coating method, or an ion plating method. Here, the resistance heating deposition method may be performed by heating and evaporating a source material according to resistance to deposit the source material on a deposition target. For example, the sputtering method may be performed by manufacturing a thin film by sputtering.

[0047] In the embodiment of the present application, the inorganic layer 14 is formed on the capping layer 13 and completely covers the light-emitting device 12 , and the inorganic layer 14 includes an inorganic material doped with a quantum dot compound; wherein the inorganic layer 14 is used to encapsulate the light-emitting device 12 .

[0048] In an embodiment of the present application, the quantum dot compound includes any one of cadmium selenide quantum dots, cadmium sulfide quantum dots, lead sulfide quantum dots, cadmium telluride quantum dots and nanocrystal quantum dots, and the quantum dot compound is used as the nucleation site of the inorganic layer 14.

[0049] Specifically, nucleation is the "incubation stage" at the beginning of phase change. The formation of clouds, fog, rain in the sky, smoke generated by combustion, ice crystals, bubbles from soda and beer, etc. are all nucleation phenomena. Among them, nucleation phenomena require nucleation sites to occur. The quantum dot compound is used as the nucleation site of the inorganic layer 14, which can promote the rapid solidification of the inorganic layer 14 in a molten state into an inorganic film layer without pinhole defects.

[0050] In the embodiment of the present application, when the inorganic layer 14 is in a molten state, the concentration of the quantum dot compound is between 0.01 mg / ml and 5 mg / ml. When the concentration of the quantum dot compound is greater than 5 mg / ml, the inorganic layer 14 will introduce impurity defects, which is not conducive to forming a high-density and high-quality film; when the concentration of the quantum dot compound is less than 0.01 mg / ml, the quantum dot compound will not be able to act as a nucleation site due to its too low concentration.

[0051] Furthermore, the particle size of the quantum dot compound is between 3 nm and 5 nm, and the quantum dot compound is in the form of a solution or a powder. The particle size of the quantum dot compound and the form of the quantum dot compound have little effect on the film formation of the inorganic layer 14 .

[0052] In an embodiment of the present application, the inorganic material in the inorganic layer 14 includes: tin oxide (SnO) and at least one of phosphorus oxide (P2O5), boron phosphate (BPO4), tin fluoride (SnF2), niobium oxide (NbO or Nb2O5), lead fluoride (PbF2), silicon oxide (SiO2), tungsten oxide (WO3), indium oxide (In2O3), bismuth oxide (Bi2O3), zinc oxide (ZnO) and boron oxide (B2O3).

[0053] Furthermore, the inorganic layer 14 further includes quantum dot ligands, and the quantum dot ligands include any one of thioglycolic acid, mercaptopropionic acid, mercaptobutyric acid, mercaptoethylamine, oleylamine and oleic acid.

[0054] The addition of quantum dot ligands in the inorganic layer 14 has two effects as follows:

[0055] On the one hand, the quantum dot ligand is used to maintain the structure, dispersibility and stability of the quantum dot compound; for example, when the quantum dot compound is cadmium selenide quantum dots, the stability of the compound composed of quantum dot ligands of cadmium selenide quantum dots and oleylamine or oleic acid is greater than the stability of the compound composed of quantum dot ligands of cadmium selenide quantum dots and mercaptopropionic acid;

[0056] On the other hand, when the inorganic material doped with quantum dot ligands is in a molten state, the quantum dot ligands can generate interaction forces such as hydrogen bonds with the solution of the inorganic material. This interaction force will slow down the volatilization rate of the solution of the inorganic material, thereby reducing the growth rate of the inorganic film, thereby further reducing or removing the elements or pinhole defects in the inorganic layer 14, and further forming a highly dense inorganic layer 14, preventing external water and oxygen from invading the light-emitting device 12 through the above-mentioned elements or pinhole defects, thereby improving the stability of the display panel 10; for example, when the quantum dot ligand is mercaptopropionic acid, since mercaptopropionic acid has a thiol group and contains nitrogen atoms, it can form hydrogen bonds with other hydrogen atoms.

[0057] Among them, the interaction force between the quantum dot ligand and the inorganic material solution to promote the inorganic material to produce high-density thin films is secondary. Therefore, the quantum dot compound as a nucleation site is the main factor. Even without the presence of the quantum dot ligand, the quantum dot compound is helpful for the inorganic material to produce high-density thin films.

[0058] like Figure 2 FIG. 1 is a schematic diagram showing the principle of preparing a defect-free inorganic layer in the display panel 10 of the present application; please refer to Figure 2 2a is a schematic diagram of the existing inorganic material being in a molten state after being heated. At this time, the existing inorganic material is in a molten state after being heated to form a first solution 20; please refer to Figure 2 2b is a schematic diagram of the film formation of the existing inorganic material after cooling; at this time, the first solution 20 solidifies into a film, solid grains are formed in its molecules, and the contact interface between adjacent solid grains forms a polycrystalline boundary 21, and there is a pinhole defect 22 between at least two adjacent polycrystalline boundaries 21.

[0059] See also Figure 2 2c is a schematic diagram of the inorganic material of the present application being in a molten state after being heated; at this time, the quantum dot compound 40 is dispersed in the second solution 30 formed by the inorganic material; please refer to Figure 2 Figure 2d is a schematic diagram of the film formation of the inorganic material after cooling of the present application; at this time, the quantum dot compound 40 can serve as the nucleation site of the second solution 30, and can regulate the growth process of the second solution 30 solidifying after cooling, thereby accelerating the flow of the fluidized second solution 30 doped with the quantum dot compound, thereby reducing or removing the elements or pinhole defects existing in the original inorganic material after film formation, and further forming a highly dense inorganic film layer 31, preventing external water and oxygen from invading the light-emitting device 12 through the above-mentioned elements or pinhole defects, and further improving the stability of the display panel 10.

[0060] like Figure 3 , which is a step diagram of a method for preparing a display panel 10 of the present application; wherein the method comprises:

[0061] S10 , preparing a plurality of light emitting devices 12 on a substrate 11 .

[0062] Specifically, the S10 further includes:

[0063] First, a substrate 11 is provided, wherein the substrate 11 includes a substrate and a thin film crystal layer located on the substrate;

[0064] Afterwards, a plurality of light-emitting devices 12 are formed on the thin film crystal layer, wherein the light-emitting devices 12 include a first electrode 121 disposed on the substrate 11, a light-emitting functional layer 122 disposed on the first electrode 121, and a second electrode 123 disposed on the light-emitting functional layer 122. Specifically, the light-emitting functional layer 122 also includes a hole injection layer 1221 disposed on the first electrode 121, a hole transport layer 1222 disposed on the hole injection layer 1221, a light-emitting material layer 1223 disposed on the hole transport layer 1222, an electron transport layer 1224 disposed on the light-emitting material layer 1223, and an electron injection layer 1225 disposed on the electron transport layer 1224, as shown in FIG. Figure 4A shown.

[0065] S20, forming an inorganic layer 14 on the light emitting device 12, wherein the inorganic layer 14 includes an inorganic material doped with a quantum dot compound.

[0066] Specifically, the S20 further includes:

[0067] First, a capping layer 13 is formed on the second electrode 123, wherein the capping layer 13 is used as a protective layer to prevent the second electrode 123 from being damaged;

[0068] Then, the inorganic layer 14 is formed on the capping layer 13, and the inorganic layer 14 includes an inorganic material doped with a quantum dot compound, such as Figure 4B As shown;

[0069] The operation of forming the inorganic layer 14 will now be described in detail:

[0070] First, a preliminary inorganic film (not shown) is formed on the light emitting device 12, wherein the preliminary inorganic film includes an inorganic material doped with a quantum dot compound;

[0071] Afterwards, a first heating operation is performed to heat the preliminary inorganic film so that the preliminary inorganic film is in a molten state; at this time, the quantum dot compound is dispersed in the molten inorganic material solution.

[0072] Then, the molten inorganic film is cooled to form a preliminary inorganic layer (not shown) by forming the inorganic material solution into a film for the first time. The quantum dot compound is dispersed in the molten inorganic material solution as a nucleation site, which can regulate the growth process of the preliminary inorganic layer from the molten state to the solid state, and further accelerate the flow of the fluidized inorganic material doped with the quantum dot compound, thereby reducing or removing the element or pinhole defects in the preliminary inorganic layer.

[0073] Afterwards, a second heating operation is performed to heat the preliminary inorganic layer so that the preliminary inorganic layer is in a molten state. At this time, the quantum dot compound is dispersed in the molten inorganic material solution. Finally, the preliminary inorganic layer in a molten state is cooled to obtain the inorganic layer 14 .

[0074] Among them, performing the second heating operation can make the thin film constituting the preliminary inorganic layer continue to grow, and can further reduce the elements or pinhole defects existing in the existing inorganic material after film formation; performing the second heating operation can ensure that the existing inorganic material has fewer defects after film formation.

[0075] In the above embodiments of the present application, the film-forming elements of the inorganic material refer to aggregated particles of the inorganic material that are not conducive to film formation during film formation; and the pinholes are areas where the capping layer 13 is exposed due to the absence of inorganic material.

[0076] In the above embodiment of the present application, the thickness of the inorganic layer 14 may be between about 2 μm and about 50 μm, for example, about 2 μm to about 5 μm. Here, when the thickness of the inorganic layer 14 is in the range of about 1 μm to about 5 μm, a flexible organic light-emitting device with bending characteristics may be realized.

[0077] In the above-mentioned embodiments of the present application, the above-mentioned inorganic material may be provided by using a plasma chemical vapor deposition (PCVD) method or a plasma assisted deposition (PIAD) method, but is not limited thereto.

[0078] In order to prevent the light emitting device 12 from being exposed to the external environment through the pinholes of the preliminary inorganic film or the preliminary inorganic layer, the first heating operation or the second heating operation may be performed in an infrared furnace under vacuum or an inert gas (N 2 or Ar) atmosphere.

[0079] The preparation method of the display panel 10 provided in the embodiment of the present application can reduce or even remove the element or pinhole defects existing in the existing inorganic material before the first heating process, and the subsequent second heating process can further fill the possible defects to ensure the preparation of a high-quality inorganic film, thereby improving the stability of the display panel 10.

[0080] In the above embodiments of the present application, the display panel 10 can be applied to electronic devices including mobile phones, televisions, notebook computers, etc.

[0081] The present application discloses a display panel 10 and a preparation method thereof; the display panel 10 comprises a substrate 11, a light-emitting device 12 disposed on the substrate 11, and an inorganic layer 14 disposed on the light-emitting device 12; wherein the inorganic layer 14 comprises an inorganic material doped with a quantum dot compound; the present application forms the inorganic layer 14 on the light-emitting device 12, and the inorganic layer 14 comprises an inorganic material doped with a quantum dot compound, wherein the quantum dot compound can serve as a nucleation site for the inorganic layer 14, and can regulate the growth process of the inorganic layer 14 from a molten state to a solid state, thereby accelerating the flow of the fluidized inorganic material doped with the quantum dot compound, thereby reducing or removing the elements or pinhole defects in the inorganic layer 14, and further forming the inorganic layer 14 with high density, thereby preventing external water and oxygen from invading the light-emitting device 12 through the above elements or pinhole defects, and further improving the stability of the display panel 10.

[0082] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0083] The above is a detailed introduction to a display panel 10 and a preparation method thereof provided in an embodiment of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the technical solution and core idea of ​​the present application. Ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace some of the technical features therein with equivalents; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A display panel, characterized in that: include: substrate; A light emitting device is disposed on the substrate; as well as An inorganic layer, disposed on the light-emitting device; Wherein, the inorganic layer includes an inorganic material doped with a quantum dot compound; the quantum dot compound includes any one of cadmium selenide quantum dots, cadmium sulfide quantum dots, lead sulfide quantum dots, cadmium telluride quantum dots and nanocrystal quantum dots, and the quantum dot compound is used as the nucleation site of the inorganic layer. When the inorganic layer is in a molten state, the concentration of the quantum dot compound is between 0.01 mg / ml and 5 mg / ml.

2. The display panel according to claim 1, characterized in that: The particle size of the quantum dot compound is between 3nm and 5nm.

3. The display panel according to claim 1, characterized in that: The inorganic layer further comprises quantum dot ligands, and the quantum dot ligands comprise any one of thioglycolic acid, mercaptopropionic acid, mercaptobutyric acid, mercaptoethylamine, oleylamine and oleic acid.

4. The display panel according to claim 1, characterized in that: The inorganic layer further includes at least one of tin oxide, phosphorus oxide, boron phosphate, tin fluoride, niobium oxide, lead fluoride, silicon oxide, tungsten oxide, indium oxide, bismuth oxide, zinc oxide and boron oxide.

5. A method for preparing a display panel, characterized in that: The method comprises: Preparing a plurality of light-emitting devices on a substrate; forming an inorganic layer on the light emitting device, the inorganic layer comprising an inorganic material doped with a quantum dot compound; The step of forming an inorganic layer on the light emitting device further comprises: Forming a preliminary inorganic film on the light-emitting device, wherein the preliminary inorganic film comprises an inorganic material doped with a quantum dot compound; the quantum dot compound comprises any one of cadmium selenide quantum dots, cadmium sulfide quantum dots, lead sulfide quantum dots, cadmium telluride quantum dots and nanocrystal quantum dots, and the quantum dot compound is used as a nucleation site of the inorganic layer; Heating the prepared inorganic film to make the prepared inorganic film in a molten state; in the prepared inorganic film in a molten state, the concentration of the quantum dot compound is between 0.01 mg / ml and 5 mg / ml; The preliminary inorganic film in a molten state is cooled to obtain the inorganic layer.

6. The method for preparing a display panel according to claim 5, characterized in that: The step of forming an inorganic layer on the light emitting device further comprises: A capping layer is formed on the light emitting device, wherein the capping layer is disposed between the light emitting device and the inorganic layer.

7. The method for preparing a display panel according to claim 5, characterized in that: The light emitting device includes a first electrode disposed on the substrate, a light emitting functional layer disposed on the first electrode, and a second electrode disposed on the light emitting functional layer.

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