An anti-radiation K3 pressure switch against 250Gry gamma-ray penetration

Abstract

The present application relates to a kind of anti 250Gry's gamma ray penetration's anti-radiation K3 pressure switch, including pressure switch shell, the side of pressure switch shell body is equipped with waterproof joint, sensor converts the pressure of medium into electrical signal, after signal conditioning and fixed value, output switch quantity signal.The beneficial effects of the present application are that by using diffusion silicon oil-filled sensor as measuring element, the sticking and drift generated when mechanical switch diaphragm box pushes microswitch are eliminated, the signal and power supply of switch are shared two lines, the loop power supply two-wire standard is realized, the problem of poor reliability of power supply caused by three-wire system is eliminated, the signal line is reduced, the system is simplified, and the economy and safety are improved.

Description

Technical Field

[0001] This invention relates to the field of K3 pressure switch technology, specifically to a radiation-resistant K3 pressure switch that is resistant to 250Gry of gamma ray penetration. Background Technology

[0002] For a long time, mechanical pressure controllers have suffered from poor accuracy, jamming, and drift, causing malfunctions and failures to operate various equipment protection systems, leading to accidents and equipment damage. Three-wire pressure controllers require separate power supplies, making power supply management and reliability difficult to guarantee. Furthermore, voltage drops in long-distance power lines make them unsuitable for the dry contact requirements of industrial control, resulting in mechanical pressure controllers dominating the industrial market. However, existing sensors generate significant heat, causing drift and making it difficult to eliminate instrument temperature drift. Summary of the Invention

[0003] In view of the above-mentioned problems existing in the prior art, the main objective of the present invention is to provide a radiation-resistant K3 pressure switch with low heat generation and resistance to 250Gry gamma ray penetration.

[0004] The technical solution of this invention is as follows:

[0005] A radiation-resistant K3 pressure switch resistant to 250 Gry gamma rays includes a pressure switch housing body, a waterproof connector on one side of the pressure switch housing body, a stainless steel sensor housing at the bottom of the pressure switch housing body, a radiation-resistant module inside the stainless steel sensor housing, a sensor body inside the stainless steel sensor housing, the sensor body and the radiation-resistant module being connected by wires, a display on one side of the pressure switch housing body, a switch operation indicator light on one side of the pressure switch housing body, and a pressure switch inside the pressure switch housing body. The pressure switch includes a radiation-resistant low-power sensor, a radiation-resistant low-power amplifier, a radiation-resistant low-power constant current source, a radiation-resistant low-power logic operation module, a radiation-resistant low-power setpoint device, a radiation-resistant low-power power supply, a radiation-resistant low-power high-voltage high-power switch, and a radiation-resistant pressure switch housing.

[0006] The radiation-resistant low-power sensor is a 50µA piezoresistive sensor resistant to 250Gry gamma rays; the radiation-resistant low-power amplifier is a 50µA instrumentation amplifier resistant to 250Gry gamma rays; the radiation-resistant low-power constant current source is a 50µA constant current source resistant to 250Gry gamma rays; the radiation-resistant low-power logic operation module is a low-power logic operation circuit resistant to 250Gry gamma rays; the radiation-resistant low-power setpoint device is used to ensure the accuracy of the setpoint without drift; the radiation-resistant low-power power supply is a 120µA power supply resistant to 250Gry gamma rays; the radiation-resistant low-power high-voltage high-power switch is a high-power switch IGBT resistant to 250Gry gamma rays; and the radiation-resistant pressure switch housing is a 5mm stainless steel housing resistant to 250Gry gamma rays.

[0007] The low-power logic operation circuit that resists 250Gry gamma rays includes signal-to-set comparison operation, self-holding operation, and hysteresis control.

[0008] The radiation-resistant low-power setting device includes a low-power 50uA constant current source resistant to 250Gry gamma rays, a potentiometer, and a setting follower circuit.

[0009] The 120uA power supply, which is resistant to 250Gry of gamma rays, has a 3.3V output and a 0-450V wide input.

[0010] The high-power switching IGBT that resists 250 Gry of gamma rays is voltage driven, with a withstand voltage of 1500V and a current of 2A. The high-power switching IGBT that resists 250 Gry of gamma rays is compatible with both AC and DC.

[0011] The 5mm stainless steel shell, which is resistant to 250Gry of gamma rays, has an IP65 protection rating.

[0012] The radiation-resistant low-power sensor is a diffused silicon piezoresistive oil-filled sensor.

[0013] The stainless steel sensor housing has a thickness greater than 5mm and is made of 316L stainless steel.

[0014] The filling liquid of the radiation-resistant low-power sensor is a radiation-resistant filling liquid, which is benzyl silicone oil.

[0015] This invention has the following advantages and beneficial effects: It uses benzyl silicone oil as the measuring element, eliminating the jamming and drift that occurs when a mechanical switch diaphragm actuates a microswitch. It employs low-power technology to achieve a two-wire standard where the switch's signal and power supply share two wires, eliminating the reliability issues caused by three-wire power supplies. This reduces signal lines, simplifies the system, and improves economy and safety. A constant current source circuit with temperature compensation is used, achieving a 50uA constant current temperature compensation function, meeting the requirements of a low-power constant current source. This radiation-resistant two-wire intelligent pressure switch does not have a separate power supply; it utilizes the signal loop for power supply. The operating current cannot exceed 120uA, resulting in a low operating current and a wide operating voltage range. Especially under the 2.5V voltage drop after the switch is turned on, it ensures normal instrument operation. A low-power radiation-resistant module (sensor, instrument amplifier, setter, logic operation, power supply module, and temperature-compensated constant current source, etc.) is used to achieve low-power radiation resistance for the pressure switch, passing the test against 250Gry γ-ray penetration. Attached Figure Description

[0016] Figure 1 A schematic diagram of the principle of the radiation-resistant K3 pressure switch that resists 250 Gry of gamma ray penetration provided in an embodiment of the present invention;

[0017] Figure 2 A schematic diagram of the external structure of the radiation-resistant K3 pressure switch, which is resistant to 250 Gry of gamma rays, provided in an embodiment of the present invention.

[0018] Figure 3 A side view of a radiation-resistant K3 pressure switch resistant to 250 Gry of gamma rays, provided in an embodiment of the present invention;

[0019] Figure 4 A bottom view of the radiation-resistant K3 pressure switch, which is resistant to 250 Gry of gamma rays, provided in an embodiment of the present invention;

[0020] Figure 5 A top view of a radiation-resistant K3 pressure switch resistant to 250 Gry of gamma rays, provided in an embodiment of the present invention;

[0021] Figure 6 A schematic diagram of the internal structure of the stainless steel sensor housing of the radiation-resistant K3 pressure switch, which is resistant to 250Gry of gamma rays, provided in an embodiment of the present invention. Detailed Implementation

[0022] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. The components of the embodiments of the present invention described and shown in the accompanying drawings can generally be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without inventive effort are within the scope of protection of the present invention.

[0023] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0024] In the description of this invention, it should also be noted that, unless otherwise explicitly specified and limited, the terms "set," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0025] The present invention will now be further described with reference to the accompanying drawings and specific embodiments.

[0026] like Figures 1 to 6As shown: An embodiment of the present invention discloses a radiation-resistant K3 pressure switch resistant to 250 Gry gamma rays, comprising a pressure switch housing body 1, a waterproof connector 4 on one side of the pressure switch housing body 1, a stainless steel sensor housing 5 at the bottom of the pressure switch housing body 1, a radiation-resistant module 6 inside the stainless steel sensor housing 5, a sensor body 7 inside the stainless steel sensor housing 5, and the sensor body 7 being connected to the radiation-resistant module 6 via wires. A display 2 and a switch action indicator light 3 are located on one side of the pressure switch housing body 1. The pressure switch inside the pressure switch housing body 1 includes a radiation-resistant low-power sensor, a radiation-resistant low-power amplifier, a radiation-resistant low-power constant current source, a radiation-resistant low-power logic operation module, a radiation-resistant low-power setpoint device, a radiation-resistant low-power power supply, a radiation-resistant low-power high-voltage high-power switch, and a radiation-resistant pressure switch housing. The low-power sensor has a power supply current of 50 uA and a power consumption of 0.8 mW. The reduced power consumption leads to reduced sensor heating, overcoming the drift caused by sensor heating. Temperature drift is a major source of error in traditional instruments, and this invention fundamentally eliminates instrument temperature drift.

[0027] The radiation-resistant low-power sensor is a 50uA piezoresistive sensor resistant to 250Gry gamma rays; the radiation-resistant low-power amplifier is a 50uA instrumentation amplifier resistant to 250Gry gamma rays; the radiation-resistant low-power constant current source is a 50uA constant current source resistant to 250Gry gamma rays and has temperature compensation; the radiation-resistant low-power logic operation module is a low-power logic operation circuit resistant to 250Gry gamma rays; the radiation-resistant low-power setpoint setting device ensures accurate and drift-free setpoints; the radiation-resistant low-power power supply is a 120uA power supply resistant to 250Gry gamma rays; the radiation-resistant low-power high-voltage high-power switch is a high-power IGBT switch resistant to 250Gry gamma rays; the radiation-resistant pressure switch housing is a 5mm stainless steel housing resistant to 250Gry gamma rays; and the 50uA constant current source is resistant to 250Gry gamma rays. A low-power instrumentation amplifier, a 50uA low-power constant current source resistant to 250Gry of gamma rays, a low-power logic circuit resistant to 250Gry of gamma rays, a low-power setpoint device resistant to 250Gry of gamma rays, a 50uA low-power constant current source, potentiometer, and setpoint follower circuit resistant to 250Gry of gamma rays, a 120uA power supply resistant to 250Gry of gamma rays, the low-power power supply module using a low-power step-up / step-down LDO achieves 120uA, 3.3V output, 0-450V wide input, and its own power consumption is less than 3uA, suitable for both AC and DC, greatly facilitating installation and use under DC signals, a low-power high-voltage high-power switch resistant to radiation, a nuclear safety-grade pressure switch, and a temperature switch. Gamma rays can cause ionization of semiconductor devices and change the properties of organic insulating materials; the main factors to consider are:

[0028] Resistance: 250 Gry of gamma rays can cause escape current. The resistance of organic insulating materials is affected by radiation. Therefore, metal film resistors are used in radiation-resistant applications instead of diffused silicon resistors because metal film resistors have strong radiation resistance. They can damage the glass fibers of silicic mica. The loss coefficient does not change due to the effect of radiation on the resistance of insulating materials. Metal film resistors have good radiation resistance.

[0029] Capacitors: When capacitors are exposed to 250 Gry of gamma rays, their insulation resistance decreases, and leakage resistance limits their ability to operate in a radiation environment, thereby reducing the time constant of the circuit. This can damage the circuit design. Ceramic capacitors or tantalum capacitors made of dielectric materials with the lowest instantaneous conductivity and the lowest delayed conductivity are used. Their structure improves their ability to withstand gamma ray radiation. Capacitors made of glass, ceramic and tantalum can withstand 10 Gγ radiation. Capacitors and tunnel diodes are also used. Niobium tantalum capacitors, glass glaze capacitors and ceramic capacitors are also used.

[0030] Diodes: Gamma rays can ionize transistors made of semiconductor materials, degrading circuit parameters. They also generate primary and secondary photocurrents in the transistor, with the main effects as follows:

[0031] Rectifying diodes: When exposed to radiation, their forward resistance and reverse current increase, affecting their rectification function;

[0032] When a Zener diode is exposed to radiation, the Zener voltage increases, which alters the breakdown behavior of the Zener diode.

[0033] Silicon-controlled diodes: After being exposed to radiation, the gate current and leakage current will increase, and the voltage between the anode and cathode will also increase accordingly. This will shorten the carrier lifetime and reduce the range of silicon-controlled rectifiers.

[0034] Tunnel diode: After radiation, its negative resistance effect curve flattens out. If subjected to strong radiation, the negative resistance effect completely disappears. Silicon diodes should be used.

[0035] Transistors and integrated circuits: After being exposed to 250 Gry of gamma rays, their current gain decreases and the collector-base leakage current increases. This is due to the direct generation of carriers in the crystal by ionizing radiation, the formation of channels on the crystal surface, and damage to the crystal structure. To address this, improvements are made to the crystal structure, size, and semiconductor device manufacturing process to enhance the radiation resistance of the devices. One radiation resistance method is to bombard semiconductors with high-dose electrons at 200–250°C to increase the radiation resistance of silicon crystals by 100 times.

[0036] The low-power logic operation circuit that is resistant to 250Gry gamma rays includes signal-to-set comparison operation, self-holding operation, and hysteresis control.

[0037] The radiation-resistant low-power setpoint device includes a low-power 50uA constant current source resistant to 250Gry gamma rays, a potentiometer, and a setpoint follower circuit.

[0038] A 120uA power supply with 250Gry gamma ray penetration resistance is available with 3.3V output and a wide input range of 0-450V.

[0039] The high-power switching IGBT resistant to 250Gry gamma rays is voltage-driven with a withstand voltage of 1500V and a current of 2A. It is suitable for both AC and DC applications. The radiation-resistant high-power switching IGBT resistant to 250Gry gamma rays is voltage-driven, with a withstand voltage of 1500V and a current of 10A.

[0040] The 5mm stainless steel enclosure, resistant to 250Gry gamma rays, has an IP65 protection rating.

[0041] The radiation-resistant low-power sensor is a diffused silicon piezoresistive oil-filled sensor. In radiation-resistant applications, the metal materials used for the housing and sensing element must be strong enough to resist the penetration of 250 Gry of gamma rays, thus reducing the impact of radiation on the internal components of the sensing element.

[0042] The thickness of the stainless steel sensor housing 5 is greater than 5mm. The material of the stainless steel sensor housing 5 is 316L. After the metal material is irradiated, the mechanical properties change as follows: the yield point increases, the hardness increases, the brittleness increases, and the density decreases, which reduces the strength of the material and weakens its resistance to gamma rays. For metal materials that need to be radiation resistant, stearitic stainless steel is selected.

[0043] The filling fluid of the radiation-resistant low-power sensor is a radiation-resistant filling fluid, which is benzyl silicone oil. The filling fluid in the transmitter is mostly silicone oil or fluorinated oil. After being exposed to radiation, the viscosity, conductivity and dielectric constant of the filling fluid will deteriorate sharply, thereby reducing the sensitivity of the transmitter.

[0044] Specifically, during use, this sensor consumes 50uA, which is one-twentieth of the 1000uA of a conventional piezoresistive sensor. The conventional sensor has a power supply current of 1mA, a bridge arm resistance of 4kΩ, and a power consumption of 160mW. Due to power consumption, temperature drift is caused by the change in resistance of the diffused silicon bridge arm caused by sensor self-heating. By employing a low-power sensor with a supply current of 50uA and power consumption of 0.8mW, the power consumption is reduced, leading to less sensor heating and overcoming the drift caused by sensor heating. Temperature drift is a major source of error in traditional instruments; this method fundamentally eliminates instrument temperature drift. The medium is input from the pressure measurement port through the instrument tube to the 316L stainless steel measuring diaphragm. The pressure diaphragm transmits the pressure to the diffused silicon wafer through the 316L stainless steel diaphragm and silicone oil. The piezoresistive diffused silicon converts the pressure into a resistance value, which is then converted into the resistance value of the Wheatstone bridge wall, causing a change in the signal output voltage. This signal voltage is transmitted to the instrument amplifier encapsulated in the 316L stainless steel housing. The instrument amplifier amplifies the voltage to the required level and compares it with the set value. When the pressure value is greater than the set value, a logic "1" is output to the DO output port, which is then output to the IGBT via an AND gate to control the switch closing. Otherwise, a logic "0" is output to the DO output port to control the IGBT switch opening.

[0045] Finally, it should be noted that the above-described embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit them. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A radiation-resistant K3 pressure switch resistant to 250 Gry of gamma rays, comprising a pressure switch housing body (1), characterized in that, A waterproof connector (4) is provided on one side of the pressure switch housing body (1). A stainless steel sensor housing (5) is provided at the bottom of the pressure switch housing body (1). An anti-radiation module (6) is provided inside the stainless steel sensor housing (5). A sensor body (7) is provided inside the stainless steel sensor housing (5). The sensor body (7) and the anti-radiation module (6) are connected by wires. A display (2) is provided on one side of the pressure switch housing body (1). A switch action indicator light (3) is provided on one side of the pressure switch housing body (1). The pressure switch inside the pressure switch housing body (1) includes an anti-radiation low-power sensor, an anti-radiation low-power amplifier, an anti-radiation low-power constant current source, an anti-radiation low-power logic operation module, an anti-radiation low-power setpoint device, an anti-radiation low-power power supply, an anti-radiation low-power high-voltage high-power switch, and an anti-radiation pressure switch housing. The radiation-resistant low-power sensor is a 50uA piezoresistive sensor resistant to 250Gry gamma rays; the radiation-resistant low-power amplifier is a 50uA instrumentation amplifier resistant to 250Gry gamma rays; the radiation-resistant low-power constant current source is a 50uA constant current source resistant to 250Gry gamma rays; the radiation-resistant low-power logic operation module is a low-power logic operation circuit resistant to 250Gry gamma rays; the radiation-resistant low-power setpoint setting device is used to ensure the accuracy of the setpoint without drift; the radiation-resistant low-power power supply is a 120uA power supply resistant to 250Gry gamma rays; the radiation-resistant low-power high-voltage high-power switch is a high-power switch IGBT resistant to 250Gry gamma rays; and the radiation-resistant pressure switch housing is a 5mm stainless steel housing resistant to 250Gry gamma rays.

2. The radiation-resistant K3 pressure switch resistant to 250 Gry of gamma rays according to claim 1, characterized in that: The low-power logic circuit that resists 250Gry gamma rays includes signal-to-set comparison operation, self-holding operation, and hysteresis control.

3. The radiation-resistant K3 pressure switch resistant to 250 Gry of gamma rays according to claim 2, characterized in that: The radiation-resistant low-power setting device includes a low-power 50uA constant current source resistant to 250Gry gamma rays, a potentiometer, and a setting follower circuit.

4. The radiation-resistant K3 pressure switch resistant to 250 Gry of gamma rays according to claim 3, characterized in that: The 120uA power supply, which is resistant to 250Gry of gamma rays, has a 3.3V output and a wide input range of 0-450V.

5. The radiation-resistant K3 pressure switch resistant to 250 Gry of gamma rays according to claim 4, characterized in that: The high-power switching IGBT resistant to 250 Gry of gamma rays is voltage driven, with a withstand voltage of 1500V and a current of 2A. The high-power switching IGBT resistant to 250 Gry of gamma rays is compatible with both AC and DC.

6. The radiation-resistant K3 pressure switch resistant to 250 Gry of gamma rays according to claim 5, characterized in that: The 5mm stainless steel shell, which is resistant to 250Gry of gamma rays, has an IP65 protection rating.

7. The radiation-resistant K3 pressure switch resistant to 250 Gry of gamma rays according to claim 6, characterized in that: The radiation-resistant low-power sensor is a diffused silicon piezoresistive oil-filled sensor.

8. The radiation-resistant K3 pressure switch resistant to 250 Gry of gamma rays according to claim 7, characterized in that: The thickness of the stainless steel sensor housing (5) is greater than 5 mm, and the material of the stainless steel sensor housing (5) is 316L.

9. The radiation-resistant K3 pressure switch resistant to 250 Gry of gamma rays according to claim 8, characterized in that: The filling fluid of the radiation-resistant low-power sensor is a radiation-resistant filling fluid, which is benzyl silicone oil.

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