一种硅基带间级联激光器结构、激光器及其制备方法
By employing a multilayer buffer layer transition on the silicon substrate, the mismatch problem between III-V compounds and the Si substrate was solved, enabling direct epitaxial integration of interband cascaded lasers on the silicon substrate. This expanded the mid-infrared wavelength range, reduced the threshold current density and power consumption, and simplified the process flow.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- NANJING UNIV
- Filing Date
- 2022-05-23
- Publication Date
- 2026-07-17
AI Technical Summary
Existing technologies struggle to integrate mid-infrared interband cascaded lasers on silicon substrates with high quality, especially due to the mismatch between III-V compounds and Si substrates, resulting in complex processes and high costs.
A multilayer buffer layer (Si1-xGex, AlyGa1-yAs, AlzGa1-zSb, and InwGa1-wAs) is used for transition to achieve direct epitaxial integration of interband cascaded lasers on a silicon substrate. The mismatch problem is solved by the transition between the Si substrate and the III-V semiconductor layer.
This technology enables the direct epitaxial integration of high-performance interband cascaded lasers on silicon, expanding the mid-infrared wavelength range, reducing threshold current density and power consumption, improving heat dissipation efficiency, and avoiding the complexity and high cost of traditional heterogeneous integration.
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Figure CN114914784B_ABST