Memory circuit and method of operation thereof

Abstract

Embodiments of the present invention provide a memory circuit and a method of operating the same. The memory circuit includes a non-volatile memory cell, a sense amplifier connected to the non-volatile memory cell and configured to generate a first output signal, and a detection circuit connected to the sense amplifier and the non-volatile memory cell. The detection circuit is configured to latch the first output signal and interrupt a current path between the non-volatile memory cell and the sense amplifier.

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