A display panel and a display device

By setting a light shielding layer between the light emitting element and the thin film transistor of the display panel, the problem of different driving characteristics of thin film transistors due to light reflection in the display panel is solved, and the light emission uniformity and TFT life are improved.

CN114927548BActive Publication Date: 2025-05-30WUHAN TIANMA MICRO ELECTRONICS CO LTD +1
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Patent Information

Application Number
CN202210551402.5
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2022-05-18
Publication Date
2025-05-30
Estimated Expiration
2042-05-18

AI Technical Summary

Technical Problem

In the display panel, the display light emitted by the light emitting element is easily reflected to the pixel circuit layer, resulting in differences in driving characteristics of the thin film transistor and deterioration of the display characteristics, such as different color shifts and lifespans.

Method used

A light shielding layer is provided between the light emitting element and the thin film transistor, and the light shielding layer covers the thin film transistor to prevent the influence of the light rays emitted by the light emitting element and the external light rays on the thin film transistor.

Benefits of technology

By setting the light shielding layer, each thin film transistor has the same driving characteristics, ensuring uniform light emission of the light emitting element, improving the display color shift and extending the TFT life, thereby improving the visual imaging effect of the display panel.

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Abstract

The present invention discloses a display panel and a display device. The display panel includes a display area, at least a part of the display area being a transparent display area. The transparent display area includes a plurality of light-blocking areas and light-transmitting areas. The display panel includes: a substrate; a pixel circuit layer located on one side of the substrate, the pixel circuit layer including a plurality of thin-film transistors; a plurality of light-emitting elements located on the side of the pixel circuit layer away from the substrate; in the transparent display area, both the thin-film transistors and the light-emitting elements are located in the light-blocking areas; by providing a light-shielding layer on the side of the thin-film transistor away from the substrate, and the light-shielding layer covering the thin-film transistor, to prevent the light emitted by the light-emitting elements and the light incident from the outside from affecting the thin-film transistors, ensuring that each thin-film transistor has the same driving characteristics, so that the light emission of the light-emitting elements is uniform, thereby improving display color deviation and extending the life of the TFT, and improving the visual imaging effect of the display panel.
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Description

Technical Field

[0001] Embodiments of the present invention relate to the field of display technologies, and in particular, to a display panel and a display device. Background Art

[0002] In a display panel, the display light emitted by a light-emitting element will inevitably be reflected onto the pixel circuit layer. Due to the uneven arrangement of thin film transistors (TFTs) in the pixel circuit layer, the amount of display light reaching each thin film transistor is different. The thin film transistors in the pixel circuit layer are sensitive to the self-emission of the light-emitting element, which easily causes differences in the characteristics of different TFTs, resulting in differences in the emission brightness of the light-emitting elements driven by different TFTs, and causing degradation of display characteristics, such as color deviation and different lifetimes. Summary of the Invention

[0003] The present invention provides a display panel and a display device. By providing a light-shielding layer between the light-emitting element and the thin film transistor, and covering the thin film transistor with the light-shielding layer, the display light emitted by the light-emitting element and the light incident from the outside are prevented from affecting the thin film transistor, the difference in the characteristics of different thin film transistors caused by different light-sensitive amounts is reduced, the degradation of the display characteristics is reduced, and the visual display effect of the display panel is ensured.

[0004] In a first aspect, an embodiment of the present invention provides a display panel, including a display area, at least a part of the area of the display area being a transparent display area. The transparent display area includes a plurality of non-transmissive areas and transmissive areas. The display panel includes:

[0005] A substrate;

[0006] A pixel circuit layer, located on one side of the substrate, the pixel circuit layer including a plurality of thin film transistors;

[0007] A plurality of light-emitting elements, located on the side of the pixel circuit layer away from the substrate;

[0008] In the transparent display area, both the thin film transistor and the light-emitting element are located in the non-transmissive area;

[0009] A light-shielding layer, located on the side of the thin film transistor away from the substrate, and covering the thin film transistor along a direction perpendicular to the substrate.

[0010] In a second aspect, an embodiment of the present invention further provides a display device, and the display device includes the display panel provided in the first aspect.

[0011] The display panel provided by the embodiment of the present invention includes a display area, at least part of the display area is a transparent display area, the transparent display area includes a plurality of light-blocking areas and light-transmitting areas, and the display panel includes: a substrate; a pixel circuit layer located on one side of the substrate, the pixel circuit layer includes a plurality of thin-film transistors; a plurality of light-emitting elements located on the side of the pixel circuit layer away from the substrate; in the transparent display area, both the thin-film transistors and the light-emitting elements are located in the light-blocking areas; by providing a light-shielding layer on the side of the thin-film transistor away from the substrate, and the vertical projection of the light-shielding layer on the plane of the substrate covers the vertical projection of the thin-film transistor on the plane of the substrate, to prevent the light emitted by the light-emitting elements and the light incident from the outside from affecting the thin-film transistors, ensure that each thin-film transistor has the same driving characteristics, make the light emission of the light-emitting elements uniform, thereby improving display color deviation and extending the life of the TFT, and improving the visual imaging effect of the display panel. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 is a schematic structural diagram of a display panel provided by the related art;

[0013] Figure 2 is Figure 1 a cross-sectional schematic diagram taken along the AA' direction in

[0014] Figure 3 is a schematic structural diagram of a display panel provided by an embodiment of the present invention;

[0015] Figure 4 is Figure 3 a cross-sectional schematic diagram taken along the BB' direction in

[0016] Figure 5 is Figure 3 another cross-sectional schematic diagram taken along the BB' direction in

[0017] Figure 6 is Figure 3 a cross-sectional schematic diagram taken along the CC' direction in

[0018] Figure 7 is Figure 3 another cross-sectional schematic diagram taken along the CC' direction in

[0019] Figure 8 is Figure 3 another cross-sectional schematic diagram taken along the CC' direction in

[0020] Figure 9 is Figure 3 a schematic structural diagram of a display panel in the M area in

[0021] Figure 10 is Figure 3 another cross-sectional schematic diagram taken along the BB' direction in

[0022] Figure 11 is Figure 3 Another cross-sectional schematic view along the BB' direction in

[0023] Figure 12 is a schematic structural view of another display panel provided by an embodiment of the present invention;

[0024] Figure 13 is a schematic structural view of another display device provided by an embodiment of the present invention. Detailed implementation manners

[0025] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It can be understood that the specific embodiments described herein are only used to explain the present invention, rather than limiting the present invention. In addition, it should be noted that, for the sake of description, only parts related to the present invention rather than all structures are shown in the drawings.

[0026] Figure 1 is a schematic structural view of a display panel provided by the related art; Figure 2 is Figure 1 a cross-sectional schematic view along the AA' direction in Figure 1 and Figure 2 As shown in

[0027] Based on the above technical problems, the inventors have studied and found that by adding a light-shielding layer above the thin-film transistor, the influence of light on the driving characteristics of the thin-film transistor can be blocked. Based on this, the inventors have further developed the technical solution of the embodiment of the present invention. Specifically, the embodiment of the present invention provides a display panel including a display area, at least part of the area of the display area being a transparent display area, the transparent display area including a plurality of light-blocking areas and light-transmitting areas, and the display panel including: a substrate; a pixel circuit layer located on one side of the substrate, the pixel circuit layer including a plurality of thin-film transistors; a plurality of light-emitting elements located on the side of the pixel circuit layer away from the substrate; in the transparent display area, both the thin-film transistor and the light-emitting element are located in the light-blocking area; and a light-shielding layer located on the side of the thin-film transistor away from the substrate, and along the direction perpendicular to the substrate, the light-shielding layer covers the thin-film transistor.

[0028] By adopting the above technical solution, by providing a light-shielding layer on the side of the thin-film transistor away from the substrate, and the vertical projection of the light-shielding layer on the plane where the substrate is located covers the vertical projection of the thin-film transistor on the plane where the substrate is located, the influence of the light emitted by the light-emitting element and the external light on the thin-film transistor is blocked, so that each thin-film transistor has the same driving characteristics, ensuring the uniform light emission of the light-emitting element, improving the display color deviation and extending the TFT life, thereby improving the visual imaging effect of the display panel.

[0029] The above is the core idea of the present invention. Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention.

[0030] Figure 3 is a schematic structural diagram of a display panel provided by an embodiment of the present invention; Figure 4 is Figure 3 a cross-sectional schematic diagram along the BB' direction in Figure 5 is Figure 3 a cross-sectional schematic diagram along the BB' direction in. Combining Figure 3 - Figure 5As shown in the figure, the display panel 200 provided by the embodiment of the present invention includes a display area AA, at least part of the display area AA is a transparent display area A0, the transparent display area A0 includes a plurality of light-blocking areas A1 and light-transmitting areas A2, and the display panel 200 includes: a substrate 20; a pixel circuit layer 30 located on one side of the substrate 20, and the pixel circuit layer 30 includes a plurality of thin film transistors 31; a plurality of light-emitting elements 40 located on the side of the pixel circuit layer 30 away from the substrate 20; within the transparent display area A0, both the thin film transistors 31 and the light-emitting elements 40 are located in the light-blocking areas A1; a light-shielding layer 50 located on the side of the thin film transistors 31 away from the substrate 20, and along the direction perpendicular to the substrate (as shown by the Z direction in the figure), the light-shielding layer 50 covers the thin film transistors 31.

[0031] Specifically, the display panel 200 includes an organic light-emitting diode display (OLED), a light-emitting diode display (LED), a micro light-emitting diode display (Micro LED), etc. The embodiment of the present invention does not specifically limit the type of the display panel 200. The substrate 20 of the display panel can be a rigid material such as glass or silicon wafer, or a flexible material such as ultra-thin glass, metal foil or polymer plastic material. The flexible or rigid substrate 20 can block oxygen and moisture, and prevent moisture or impurities from diffusing into the display panel through the substrate 20.

[0032] The display panel 200 includes a display area AA, the display area AA is used for normal display of images, at least part of the display area AA is a transparent display area A0, and the transparent display area A0 is provided with a plurality of light-blocking areas A1 and light-transmitting areas A2. The plurality of light-blocking areas A1 can realize normal display of images, and the light-transmitting areas A2 can selectively transmit external light into the display panel 200.

[0033] The display panel 200 further includes a pixel circuit layer 30 and a plurality of light-emitting elements 40 that are sequentially located on one side of the substrate 20. The pixel circuit includes a plurality of thin-film transistors 31. The light-emitting elements 40 include organic light-emitting diodes (OLEDs), micro light-emitting diodes (Micro LEDs), active-matrix organic light-emitting diodes (AMOLEDs), quantum dot light-emitting diodes (QLEDs), etc. The TFTs are used to drive the light-emitting elements 40 to emit light for display. In the transparent display area A0, both the thin-film transistors 31 and the light-emitting elements 40 are located in the non-transmissive area A1, increasing the light-transmitting area of the light-transmissive area A2 to improve the working performance of the devices arranged in the transparent display area A0.

[0034] Exemplarily, taking the top-gate thin-film transistor of the OLED display panel as an example, the structure of the pixel circuit layer 30 is described. The pixel circuit layer 30 of the display panel further includes an active layer 311 located on the substrate 20; a gate insulating layer 312 located on the active layer 311; a gate 313 located on the gate insulating layer 312; a first interlayer insulating layer 314 located on the gate 313, a capacitor layer 315 located on the first interlayer insulating layer 314, and a second interlayer insulating layer 316 located on the capacitor layer 315. Among them, the interlayer insulating layer can be formed by an inorganic layer insulation such as silicon oxide or silicon nitride; a source electrode 317 and a drain electrode 318 located on the second interlayer insulating layer 316. Among them, the source electrode 317 and the drain electrode 318 are respectively electrically connected to the source region and the drain region through contact holes (not shown in the figure). The source electrode 317 and the drain electrode 318 can be metals such as Cr, Pt, Ru, Au, Ag, Mo, Al, W, Cu, and / or AlNd, or metal or conductive oxides including ITO, GIZO, GZO, IZO (InZnO), or AZO (AlZnO); a passivation layer 319 located on the source electrode 317 and the drain electrode 318 of the thin-film transistor 31; and a planarization layer 320 is further included, which has a planarization effect. The drain electrode 318 of the thin-film transistor 31 is electrically connected to the anode of the light-emitting element 40 through a via hole (not shown in the figure). Usually, a metal layer and an insulating layer (not shown in the figure) are further included between the drain electrode 318 and the anode to ensure the transmission of the via hole connection current signal and realize driving the light-emitting element 40 to emit light.

[0035] In order to prevent some of the display light emitted by the light-emitting element 40 from being reflected by the film layer of the display panel and reaching the active layer 311 of the thin-film transistor 31 with different amounts of light, resulting in optical effects such as leakage current, causing differences in the driving characteristics of multiple thin-film transistors 31, a patterning process is used to provide a light-shielding layer 50 between the pixel circuit layer 30 and the multiple light-emitting elements 40. The vertical projection of the light-shielding layer 50 on the plane where the substrate 20 is located covers the vertical projection of each thin-film transistor 31 on the plane where the substrate 20 is located, so as to block some of the display light emitted by the light-emitting element 40 from passing through the display panel 200 and reaching the active layer 311 of the thin-film transistor 31, avoiding the optical effects of the thin-film transistor 31, enabling each thin-film transistor 31 to have the same driving characteristics, ensuring uniform light emission of the light-emitting element, effectively improving display color deviation and extending the TFT lifespan, thereby enhancing the visual imaging effect of the display panel. Herein, the same driving characteristics mean that the driving currents of each thin-film transistor 31 for driving the light-emitting element 40 are the same; the light-shielding layer 50 can be prepared by adding a film layer, or can be prepared on the same layer using the existing film layer, and no specific limitation is made here.

[0036] It should be noted that "patterning" in this article specifically refers to a non-whole-layer structure, that is, a structure formed by first forming a whole-layer material and then engraving a specific shape during the manufacturing process; the display device provided in this embodiment further includes other film layers, such as a pixel definition layer 321, a thin-film encapsulation layer 322, etc., which jointly function to achieve the display function of the display device. Among them, the thin-film encapsulation layer 322 can include at least three layers, and no detailed description is made here one by one.

[0037] In summary, the display panel provided in the embodiment of the present invention includes a display area, at least part of the area of the display area is a transparent display area, the transparent display area includes a plurality of non-transmissive areas and transmissive areas, and the display panel includes: a substrate; a pixel circuit layer located on one side of the substrate, the pixel circuit layer includes a plurality of thin-film transistors; a plurality of light-emitting elements located on the side of the pixel circuit layer away from the substrate; in the transparent display area, both the thin-film transistors and the light-emitting elements are located in the non-transmissive areas; by providing a light-shielding layer on the side of the thin-film transistor away from the substrate, and the vertical projection of the light-shielding layer on the plane where the substrate is located covers the vertical projection of the thin-film transistor on the plane where the substrate is located, so as to prevent the light emitted by the light-emitting element and the external incident light from affecting the thin-film transistor, ensuring that each thin-film transistor has the same driving characteristics, so that the light emission of the light-emitting element is uniform, thereby improving display color deviation and extending the TFT lifespan, and enhancing the visual imaging effect of the display panel.

[0038] Figure 6 is Figure 3 a cross-sectional schematic diagram along the CC' direction in Figure 7 is Figure 3 another cross-sectional schematic diagram along the CC' direction inFigure 8 Yes Figure 3 Another cross-sectional schematic view along the CC' direction. As a feasible implementation, in combination with Figure 3 , Figure 6 - Figure 8 As shown, optionally, the light-shielding layer 50 includes a metal material, and the light-shielding layer 50 is electrically connected to the fixed voltage terminal 32.

[0039] Specifically, the light-shielding layer 50 can be made of a metal material such as Au, Ag, Cu, Ni, Pt, Pd, Al, Mo, W, Ti, Al-Nd alloy, Mo-W alloy, etc., but not limited to this. It has a good light-shielding effect and can block some of the display light emitted by the light-emitting element 40 and the light incident from the outside from passing through the display panel 200 to reach the thin-film transistor 31. The light-shielding layer 50 can be electrically connected to the fixed voltage terminal 32 by punching holes (as shown in the dotted circle in the figure). By connecting the light-shielding layer 50 in parallel with the fixed voltage terminal 32, the resistance of the fixed voltage terminal 32 can be reduced. When the current is the same, the resistance decreases and the voltage drop decreases, which can effectively reduce the voltage drop on the line of the fixed voltage terminal 32, reduce the power consumption of the display panel, and further improve the brightness uniformity of the display panel. Among them, the fixed voltage terminal 32 refers to the voltage terminal with a stable voltage in the display panel, such as the power supply voltage input terminal, the power supply voltage output terminal, etc.

[0040] As a feasible implementation, continue to combine Figure 3 , Figure 6 - Figure 8 As shown, the pixel circuit layer 30 includes a first power supply voltage trace 33 and a second power supply voltage trace 34. The voltage of the first power supply voltage trace 33 is greater than the voltage of the second power supply voltage trace 34. The fixed voltage terminal 32 includes the first power supply voltage trace 33 and the second power supply voltage trace 34.

[0041] Specifically, the pixel circuit layer 30 includes a first power supply voltage trace 33 and a second power supply voltage trace 34. The first power supply voltage trace 33 can be a PVDD signal line, and the second power supply voltage trace 34 can be a PVEE signal line. The voltage of the PVDD signal line is greater than the voltage of the PVEE signal line. The PVDD signal line and the PVEE signal line provide drive signals for the pixel drive circuit of the light-emitting element 40 to drive the light-emitting element 40 to emit light. The fixed voltage terminal 32 includes the first power supply voltage trace 33 or the second power supply voltage trace 34. The voltages of the PVDD signal line and the PVEE signal line can be arranged on the same layer, such as on the same layer as the source electrode 317 and drain electrode 318 metal layers of the thin-film transistor 31, as Figure 6 shown; or the PVDD signal line and / or the PVEE signal line are on the same layer as the metal light-shielding layer 50 and are located above the source electrode 317 and drain electrode 318 metal layers of the thin-film transistor 31, as Figure 7 shown; or they can be arranged on different layers, such as Figure 8As shown, by electrically connecting the metal light-shielding layer 50 to the first power supply voltage trace 33 to form a parallel circuit, the resistance of the PVDD signal line can be reduced, and the voltage drop on the PVDD signal line can be reduced; by electrically connecting the metal light-shielding layer 50 to the second power supply voltage trace 34 to form a parallel circuit, the resistance of the PVEE signal line can be reduced, and the voltage drop on the VEE signal line can be reduced, thereby reducing the total power consumption of the display panel and ensuring the brightness uniformity of the display panel.

[0042] As a feasible implementation manner, optionally, continue to refer to Figure 3 - Figure 5 As shown, the display panel 200 includes a first electrode layer 41, a light-emitting layer 42, and a second electrode layer 43 that are sequentially stacked in a direction away from the substrate 20; the first electrode layer 41 includes a plurality of first electrodes 411 corresponding to the light-emitting elements 40, and the second electrode layer 43 includes a plurality of openings 431 corresponding to the light-transmitting region A2.

[0043] Specifically, taking the display panel 200 as an organic light-emitting display panel (OLED) and the light-emitting element 40 as an organic light-emitting diode as an example, the display panel 200 includes a first electrode layer 41, a light-emitting layer 42, and a second electrode layer 43 that are sequentially stacked in a direction away from the substrate 20. The first electrode layer 41 includes a plurality of first electrodes 411 corresponding to the light-emitting elements 40, and the first electrode 411 is the anode of the light-emitting element 40; the second electrode layer 43 is prepared as a whole layer, and the cathode of the light-emitting element 40 is formed in the non-light-transmitting region A1, and a plurality of openings 431 corresponding to the light-transmitting region A2 are opened in the light-transmitting region A2 to meet the light-transmitting requirements. Among them, the first electrode layer 41 and the second electrode layer 43 can adopt transparent conductive materials, for example, ITO (indium tin oxide), IZO (indium zinc oxide), ITO / Ag / ITO, etc.; the light-emitting material of the light-emitting layer 42 can be a low-molecular or high-molecular organic material.

[0044] Figure 9 is Figure 3 A schematic structural diagram of a display panel in the M region in. As a feasible implementation manner, optionally, continue to refer to Figure 3 - Figure 5 and Figure 9 As shown, the non-light-transmitting region A1 includes at least one pixel unit A4. The pixel unit A4 includes a first light-emitting element 49, a second light-emitting element 44, a third light-emitting element 45, a first pixel circuit 46, a second pixel circuit 47, and a third pixel circuit 48. The first light-emitting element 49 is connected to the first pixel circuit 46, the second light-emitting element 44 is connected to the second pixel circuit 47, and the third light-emitting element 45 is connected to the third pixel circuit 48; along the direction perpendicular to the substrate (as shown by the Z direction in the figure), the first light-emitting element 49, the second light-emitting element 44, and the third light-emitting element 45 do not overlap with the third pixel circuit 48.

[0045] Specifically, the non-light-transmitting region A1 includes at least one pixel unit A4. As Figure 9 shown, the pixel unit A4 includes a first light-emitting element 49, a second light-emitting element 44, a third light-emitting element 45, a first pixel circuit 46, a second pixel circuit 47, and a third pixel circuit 48. The first pixel circuit 46 is electrically connected to the first light-emitting element 49 to drive the first light-emitting element 49 to emit light; the second pixel circuit 47 is electrically connected to the second light-emitting element 44 to drive the second light-emitting element 44 to emit light; the third pixel circuit 48 is electrically connected to the third light-emitting element 45 to drive the third light-emitting element 45. In the transparent display technology, since it is necessary to consider improving the overall transmittance of the display panel, it is inevitable to compress the pixel opening (light-emitting element) to cover only 2 TFT sub-pixels. As a feasible implementation, the distance between the first light-emitting element 49, the second light-emitting element 44, and the third light-emitting element 45 can be compressed or the size of each light-emitting element can be reduced, so that the vertical projection of the first light-emitting element 49 on the plane where the substrate 20 is located, the vertical projection of the second light-emitting element 44 on the plane where the substrate 20 is located, and the vertical projection of the third light-emitting element 45 on the plane where the substrate 20 is located do not overlap with the vertical projection of the third pixel circuit on the plane where the substrate 20 is located, as shown in combination with Figure 5 and Figure 9 shown; since the TFT is sensitive to the self-luminescence of the light-emitting elements (49, 44, 45), using the TFT compression setting makes the amount of light reflected by the light-emitting elements (49, 44, 45) and the amount of light incident from the light-transmitting region A2 reaching the third TFT (131) different from the amount of light of the other two TFT sub-pixels, which easily causes a large difference in the driving characteristics between the third TFT (131) and the other two TFTs, resulting in the degradation of the driving characteristics of the TFT, and problems such as uneven display brightness, display color deviation, and short TFT lifespan.

[0046] Figure 10 is Figure 3 Another cross-sectional schematic diagram along the BB' direction in Figure 5 and Figure 10 shown. On the basis of the above embodiments, continuing to refer to Figure 5 and Figure 10 shown, the first electrode layer 41 further includes a plurality of auxiliary electrodes 412, and the auxiliary electrodes 412 are electrically connected to the second electrode layer 43; along the direction perpendicular to the substrate (as shown by the Z direction in the figure), the auxiliary electrodes 412 at least partially overlap with the third pixel circuit.

[0047] Specifically, in the manufacturing process, the entire layer of the first electrode layer 41 can be formed first, and then the first electrode 411 and the auxiliary electrodes 412 can be etched. By setting the auxiliary electrodes 412 to be electrically connected to the second electrode layer 43, a parallel circuit can be formed. The third pixel circuit (not shown in the figure) includes a plurality of TFTs (131). Figure 10Only one TFT (131) is shown. Along the Z direction in the figure, the vertical projection of the auxiliary electrode 413 on the plane where the substrate 20 is located overlaps with the vertical projection of at least part of the TFTs (131) in the third pixel circuit on the plane where the substrate 20 is located. The auxiliary electrode 412 not only reduces the voltage drop of the second electrode layer 43, but also can be reused as a light-shielding layer 50, reducing the light effect of external light on the TFTs near the light-transmitting area A2, reducing the change in the driving characteristics of the TFTs, reducing display color deviation and extending the life of the TFTs, thereby improving the visual imaging effect of the display panel.

[0048] Further, optionally, continue to refer to Figure 10 As shown, the light-shielding layer 50 is on the same layer as the first electrode layer 41. While preparing the first electrode 411 and the auxiliary electrode 412, an independent metal electrode can be etched between the first electrodes 411 as the light-shielding layer 50 to block the influence of the reflected light of the light-emitting element 40 on the driving characteristics of the TFTs located thereunder.

[0049] Figure 11 is Figure 3 Another cross-sectional schematic diagram along the BB' direction in. As a feasible implementation manner, continue to refer to Figure 3 and 11 As shown, optionally, the display panel 200 includes a first metal layer M1, a second metal layer M2, and a third metal layer M3; the first metal layer M1 and the second metal layer M2 are located in the pixel circuit layer 30. The first metal layer M1 includes a plurality of scan lines extending along a first direction, and the second metal layer M2 includes a plurality of data lines extending along a second direction. The first direction (shown as the X direction in the figure) and the second direction (shown as the Y direction in the figure) intersect; the light-shielding layer 50 is provided on the same layer as the third metal layer M3.

[0050] Specifically, the display panel 200 includes a first metal layer M1, a second metal layer M2, and a third metal layer M3. The first metal layer M1 can be the gate 313 metal layer of the thin-film transistor 31, the second metal layer M2 is the source electrode 317 and drain electrode 318 metal layer of the thin-film transistor 31, and the third metal layer M3 can be the connection electrode layer between the drain electrode 318 and the light-emitting element 40. The first metal layer M1 includes a plurality of scan lines extending along a first direction for transmitting scan signals, and the second metal layer M2 includes a plurality of data lines extending along a second direction for transmitting data signals. It should be noted that due to the position where the display panel cross-section is selected, Figure 4 、 Figure 5 、 Figure 6 - Figure 8 、 Figure 10 - Figure 11The drain electrode 318 of the thin-film transistor 31 is not shown as being electrically connected to the first electrode 411 of the light-emitting element 40. In this embodiment, a third metal layer M3 is provided between the second metal layer M2 and the first electrode layer 41. The first electrode 411 - the third metal layer M3 - the drain electrode 318 electrical connection can be formed by means of punching to achieve driving the light-emitting element 40 to emit light. Based on the existing film layers, a light-shielding layer 50 can be provided between the light-emitting element 40 and the thin-film transistor 31 by using a patterning preparation process. The light-shielding layer 50 is provided on the same layer as the third metal layer M3 to prevent part of the display light emitted by the light-emitting element 40 from being reflected by the film layers of the display panel and reaching the active layer 311 of the thin-film transistor 31 with different light amounts respectively, avoiding the generation of light effects of the thin-film transistor 31, ensuring that each thin-film transistor 31 has the same driving characteristics, and ensuring the uniform light emission of the light-emitting element.

[0051] As a feasible implementation manner, optionally, continue to refer to Figure 4 , Figure 5 , Figure 6 - Figure 8 , Figure 10 - Figure 11 As shown, the substrate 20 is a flexible substrate; the substrate 20 includes a support layer 21, a first organic layer 22, a buffer layer 23, and a second organic layer 24 stacked in sequence.

[0052] Specifically, the display panel 200 is a flexible display panel, and the substrate 20 is a flexible substrate. The support layer 21 can be made of flexible materials such as ultra-thin glass, metal foil, or polymer plastic materials, which can not only play a supporting role but also be bent. Due to the light shielding of the light-shielding layer 50, charge polarization of the first organic layer 22 and the second organic layer 24 can also be avoided, ensuring the stable performance of the organic layer; the first organic layer 22, the buffer layer 23, and the second organic layer 24 are sequentially deposited on the support layer 21. The first organic layer 22, the buffer layer 23, and the second organic layer 24 can cover the entire upper surface of the substrate 20. When the display panel 200 is bent, the buffer layer 23 can buffer and protect the first organic layer 22 and the support layer 21, release the extrusion stress of the second organic layer 24, and avoid the fracture of the first organic layer 22 and the support layer 21, thereby ensuring the normal display of the display panel and improving the yield of the display panel.

[0053] Optionally, the material of the buffer layer 23 can be silicon oxide or silicon nitride. Optionally, the support layer 21 includes polyethylene terephthalate, and the first organic layer 22 and the second organic layer 24 include polyimide. Among them, the support layer 21 can also include at least one of polyimide, polyethylene naphthalate, polycarbonate, polyarylate, and polyethersulfone.

[0054] Figure 12 is a schematic structural diagram of another display panel provided by an embodiment of the present invention. Combining Figure 3 and Figure 12As shown, based on the above embodiments, optionally, the display area AA further includes a normal display area A3, and the transparent display area A0 is multiplexed as a photosensitive element setting area. The normal display area A3 is used for normal display of images. The transparent display area A0 is multiplexed as a photosensitive element setting area, and devices can be set, such as an image sensor, a fingerprint sensor, etc. External light enters the interior of the display panel 200 through the light-transmitting area A2 to enable light reception by devices such as an image sensor and a fingerprint sensor.

[0055] As a feasible implementation manner, optionally, all display areas are transparent display areas. When all display areas are transparent display areas, it can not only enable normal display of images but also enable external light transmission, meeting the requirements of some special display and light-transmission applications of the display panel.

[0056] Based on the same inventive concept, an embodiment of the present invention further provides a display device. Figure 13 It is a schematic structural diagram of the display device provided by an embodiment of the present invention. As Figure 13 shown, the display device includes any one of the display panels provided by the above embodiments. Exemplarily, as Figure 13 shown, the display device 300 includes a display panel 200. Therefore, the display device also has the beneficial effects of the display panel in the above embodiments. The same parts can be understood by referring to the explanation of the display panel above, and will not be elaborated below.

[0057] The display device 300 provided by an embodiment of the present invention can be Figure 13 the mobile phone shown, or any electronic product with a display function, including but not limited to the following categories: television, notebook computer, desktop monitor, tablet computer, digital camera, smart bracelet, smart glasses, in-vehicle display, industrial control device, medical display screen, touch interaction terminal, etc. The embodiments of the present invention do not make special limitations in this regard.

[0058] Note that the above is only a preferred embodiment of the present invention and the applied technical principle. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described here. Various obvious changes, re-adjustments, and substitutions can be made by those skilled in the art without departing from the protection scope of the present invention. Therefore, although the present invention has been described in detail through the above embodiments, the present invention is not limited to the above embodiments. Without departing from the inventive concept of the present invention, more other equivalent embodiments can be included, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A display panel, characterized in that, it includes a display area, at least part of the area of the display area is a transparent display area, the transparent display area includes a plurality of light-blocking areas and light-transmitting areas, and the display panel includes: a substrate; a pixel circuit layer located on one side of the substrate, the pixel circuit layer includes a plurality of thin film transistors; a plurality of light-emitting elements located on the side of the pixel circuit layer away from the substrate; in the transparent display area, both the thin film transistor and the light-emitting element are located in the light-blocking area; the light-blocking area includes at least one pixel unit, the pixel unit includes a first light-emitting element, a second light-emitting element, a third light-emitting element, a first pixel circuit, a second pixel circuit, and a third pixel circuit, the first light-emitting element is connected to the first pixel circuit, the second light-emitting element is connected to the second pixel circuit, and the third light-emitting element is connected to the third pixel circuit; along the direction perpendicular to the substrate, the first light-emitting element, the second light-emitting element, and the third light-emitting element do not overlap with the third pixel circuit; a light-shielding layer located on the side of the thin film transistor away from the substrate, and along the direction perpendicular to the substrate, the light-shielding layer covers the thin film transistor.

2. The display panel according to claim 1, characterized in that, the light-shielding layer includes a metal material, and the light-shielding layer is electrically connected to a fixed voltage terminal.

3. The display panel according to claim 2, characterized in that, the pixel circuit layer includes a first power supply voltage trace and a second power supply voltage trace, the voltage of the first power supply voltage trace is greater than the voltage of the second power supply voltage trace, and the fixed voltage terminal includes the first power supply voltage trace and the second power supply voltage trace.

4. The display panel according to claim 1, characterized in that, the display panel includes a first electrode layer, a light-emitting layer, and a second electrode layer stacked in sequence along the direction away from the substrate; the first electrode layer includes a plurality of first electrodes corresponding to the light-emitting elements, and the second electrode layer includes a plurality of openings corresponding to the light-transmitting areas.

5. The display panel according to claim 4, characterized in that, the first electrode layer further includes a plurality of auxiliary electrodes, and the auxiliary electrodes are electrically connected to the second electrode layer; along the direction perpendicular to the substrate, the auxiliary electrodes at least partially overlap with the third pixel circuit.

6. The display panel according to claim 4, characterized in that, the light-shielding layer is on the same layer as the first electrode layer.

7. The display panel according to claim 1, characterized in that, the display panel includes a first metal layer, a second metal layer, and a third metal layer; the first metal layer and the second metal layer are located in the pixel circuit layer, the first metal layer includes a plurality of scan lines extending along a first direction, the second metal layer includes a plurality of data lines extending along a second direction, and the first direction and the second direction intersect; the light-shielding layer is provided on the same layer as the third metal layer.

8. The display panel according to claim 1, characterized in that, The substrate is a flexible substrate; The substrate includes a support layer, a first organic layer, a buffer layer, and a second organic layer stacked in sequence.

9. The display panel according to claim 8, wherein, the support layer includes polyethylene terephthalate, and the first organic layer and the second organic layer include polyimide.

10. The display panel according to claim 1, wherein, the display area further includes a conventional display area, and the transparent display area is multiplexed as a photosensing element setting area.

11. The display panel according to claim 1, wherein, the display area is all transparent display areas.

12. A display device, wherein, it includes the display panel according to any one of claims 1-11.

Citation Information

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