Pellicle membrane for a lithographic apparatus

Abstract

A surface film separator for a photolithography apparatus is provided, the separator comprising a substrate including a plurality of inclusions distributed therein. A method for manufacturing the surface film separator, a photolithography apparatus including the surface film separator, a surface film assembly including the separator for use in a photolithography apparatus, and the use of the surface film separator in a photolithography apparatus or method are also provided.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority to EP application 20152141.6, filed January 16, 2020; EP application 20179484.9, filed June 11, 2020; and EP application 20193717.4, filed August 31, 2020, which are incorporated herein by reference in their entirety. Technical Field

[0003] This invention relates to a diaphragm for use in a photolithography apparatus, components for use in a photolithography apparatus, and the use of the diaphragm in a photolithography apparatus or method. Background Technology

[0004] A lithography apparatus is a machine configured to apply a desired pattern onto a substrate. For example, lithography apparatus can be used in the manufacture of integrated circuits (ICs). A lithography apparatus can project a pattern from a patterning apparatus (e.g., a mask) onto a layer of radiation-sensitive material (resist) disposed on a substrate.

[0005] The wavelength of the radiation used by a lithography apparatus to project a pattern onto a substrate determines the minimum size of the feature that can be formed on that substrate. Lithography apparatus using EUV radiation (electromagnetic radiation with wavelengths in the range of 4-20 nm) can be used to form smaller features on substrates than conventional lithography apparatus (which, for example, can use electromagnetic radiation with a wavelength of 193 nm).

[0006] Photolithography equipment includes patterning apparatus (e.g., a mask or photomask). Radiation is provided to pass through or be reflected from the patterning apparatus to form a pattern on a substrate. A diaphragm assembly (also called a surface film) may be provided to protect the patterning apparatus from airborne particles and other forms of contaminants. Contaminants on the surface of the patterning apparatus can lead to manufacturing defects on the substrate.

[0007] In addition to patterning apparatus, the coating can also be provided for protecting optical components. The coating can also be used to provide channels for lithographic radiation between mutually sealed areas of a lithography apparatus. The coating can also be used as a filter (such as a spectral purity filter) or as part of a dynamic gas lock in a lithography apparatus.

[0008] The mask assembly may include a surface film that protects the pattern forming apparatus (e.g., a mask) from particulate contamination. The surface film may be supported by a surface film frame to form the surface film assembly. For example, the surface film may be attached to the frame by gluing or otherwise attaching a boundary region of the surface film to the frame. The frame may be permanently or releasably attached to the pattern forming apparatus.

[0009] Because a surface coating exists within the optical path of the EUV radiation beam, it needs to have high EUV transmittance. High EUV transmittance allows a larger proportion of the incident radiation to pass through the surface coating. Furthermore, reducing the amount of EUV radiation absorbed by the surface coating can lower its operating temperature. Since transmittance depends at least in part on the thickness of the surface coating, it is desirable to provide a surface coating that is as thin as possible while retaining sufficient reliable strength to withstand the sometimes harsh environment within photolithography equipment.

[0010] Therefore, it is desirable to provide a coating material that can withstand the harsh environment of lithography equipment (especially EUV lithography equipment). In particular, it is desirable to provide a coating material that can withstand higher power than before.

[0011] Although this application generally refers to surface films in the context of lithography equipment (especially EUV lithography equipment), the invention is not limited to surface films and lithography equipment, and it should be understood that the subject matter of the invention can be used in any other suitable equipment or situation.

[0012] For example, the method of the present invention can be equivalently applied to spectral purity filters. Some EUV sources (such as EUV sources that use plasma to generate EUV radiation) emit not only the desired "in-band" EUV radiation but also unwanted (out-of-band) radiation. This out-of-band radiation is most significant in the deep UV (DUV) radiation range (100 nm to 400 nm). Moreover, in the case of some EUV sources (e.g., laser-generated plasma EUV sources), the radiation from the laser (typically at 10.6 micrometers) exhibits significant out-of-band radiation.

[0013] In photolithography equipment, spectral purity is required for several reasons. One reason is that resists are sensitive to out-of-band radiation; therefore, if the resist is exposed to such out-of-band radiation, the image quality of the pattern applied to the resist may degrade. Furthermore, out-of-band infrared radiation (e.g., 10.6-micron radiation) from some laser-generated plasma sources can cause undesirable heating of the patterning apparatus, substrate, and optics within the photolithography equipment. This heating can lead to damage to these components, reduced lifetime, and / or defects or distortions in the pattern projected onto and applied to the resist-coated substrate.

[0014] For example, a typical spectral purity filter can be formed from a silicon substrate (e.g., a silicon mesh, or other structure with holes) coated with a reflective metal (such as molybdenum). In use, a typical spectral purity filter may be subjected to high thermal loads from, for example, incident infrared and EUV radiation. This thermal load can cause the temperature of the spectral purity filter to exceed 800°C. Under high head loads, the coating may delaminate due to the difference in the coefficient of linear expansion between the reflective molybdenum coating and the underlying silicon support structure. Delamination and degradation of the silicon substrate are accelerated by the presence of hydrogen, which is typically used as a gas in the environment where spectral purity filters are used to suppress debris (e.g., particles) from entering or leaving specific parts of the lithography apparatus. Therefore, a spectral purity filter can be used as a liner, and vice versa. Therefore, the term "liner" as used in this application also refers to a "spectral purity filter." Although reference is primarily made to liner in this application, all features can be equivalently applied to spectral purity filters.

[0015] This invention has been designed to attempt to solve at least some of the problems mentioned above. Summary of the Invention

[0016] According to a first aspect of the present invention, a surface film diaphragm for a photolithography apparatus is provided, the diaphragm comprising a substrate, the substrate comprising a plurality of inclusions distributed therein.

[0017] An inclusion is a discrete region of material that differs from the matrix material. The inclusion and matrix materials can be chemically different. The inclusion and matrix materials can also have different morphologies.

[0018] The inclusions can be in crystalline form. The inclusions (which can be crystalline) can be randomly distributed. The inclusions can be amorphous, but are preferably crystalline.

[0019] In this way, the surface membrane can be considered a composite material. Other surface membranes comprise stacked layers of material. In other surface membranes, an emissive metal layer is disposed on the surface of the surface membrane to increase its emissivity. This increase in emissivity lowers the operating temperature of such a surface membrane. Even so, such a surface membrane is prone to island formation when the thin metal layer dewets from the underlying layer and forms discrete metal islands. Island formation reduces the emissivity of the metal layer, thus increasing the operating temperature of the surface membrane. The increased operating temperature leads to more dewetting and island formation, and if this continues for too long, it may eventually lead to surface membrane failure. Once the metal layer dewets from the surface membrane, the surface membrane needs to be replaced. The present invention overcomes these difficulties by providing multiple inclusions (preferably in crystalline form) within the matrix. Therefore, the surface membrane according to the present invention is less susceptible to dewetting and island formation.

[0020] Crystals or inclusions can be randomly distributed in the matrix. Since the presence of crystals or inclusions increases the emissivity of the membrane, there is no special requirement for the crystals to be uniformly distributed.

[0021] The inclusion or crystal may include a first material, and the matrix may include a second material. Specifically, the emissivity of the first material is greater than that of the second material. In another embodiment, the emissivity of the second material is greater than that of the first material.

[0022] Therefore, the matrix and inclusions / crystals can serve different purposes. The crystals can be made of highly emissive materials, particularly those that are relatively more emissive than the matrix material. Thus, the crystals increase the overall emissivity of the surface membrane, thereby lowering its operating temperature. Higher emissivity also allows for the use of higher-power light sources in the lithography apparatus, as the surface membrane will be less prone to overheating. By having the emissive material in the form of crystals distributed within the matrix—that is, material included in the surface membrane for the purpose of increasing the emissivity of the membrane—the problems of dewetting and island formation are solved. Furthermore, since dewetting is possible in the surface membrane including the emissive metal layer, the metal layer needs to be sufficiently thick to reduce the likelihood of island formation. Therefore, the metal layer can be thicker than is required purely from an emissivity perspective. A thicker metal layer reduces the transmittance of the surface membrane, which in turn reduces the throughput of the lithography apparatus, as the reduced amount of light energy can be used for imaging. In this invention, a smaller amount of emissive material than previously possible can be included. Therefore, the surface membrane according to the invention can have a smaller amount of emissive material compared to previous surface membranes. This has the advantage of increasing the transmittance of the surface membrane. The matrix material can be made of a material capable of providing mechanical strength and structure to the surface membrane. The matrix material can have a lower emissivity than a crystal, but greater mechanical strength. In this way, the composite material of the surface membrane of the present invention can possess the mechanical strength required for use in photolithography equipment, as well as a high emissivity to control the operating temperature of the membrane during use.

[0023] The crystal or inclusion may include molybdenum silicide, zirconium silicide, ruthenium silicide, tungsten silicide, or combinations thereof.

[0024] These materials possess high emissivity and can withstand the operating conditions of EUV lithography equipment. They have high melting points and are conductive. The conductivity is proportional to the emissivity of the material.

[0025] The substrate may include silicon. Any allotrope or form of silicon can be used. For example, silicon may include polycrystalline silicon, amorphous silicon, nanocrystalline silicon, monocrystalline silicon, or combinations thereof. Silicon has good EUV transmittance. Silicon also exhibits high etch selectivity for silicon oxide, which is commonly used as a sacrificial layer in manufacturing. Furthermore, the coefficient of thermal expansion of silicon (especially p-Si) is close to that of a silicon substrate on which a surface film / septum is fabricated. Therefore, it is easier to obtain the prestress level of the material.

[0026] The substrate may include silicon nitride. Silicon nitride has a low coefficient of thermal expansion and a high melting point. Therefore, silicon nitride is suitable for photolithography equipment because it can withstand high temperatures. Silicon nitride also has the necessary mechanical strength to withstand the conditions of operating EUV photolithography equipment. Similarly, the substrate may alternatively or additionally include silicon carbide.

[0027] The diaphragm may not include a metal coating. As mentioned above, in some surface films, a metal layer is included to increase the emissivity of the surface film; however, such diaphragms are in a high-energy state and are susceptible to dewetting and island formation. This invention includes discrete portions of emissive material throughout the substrate, so these discrete portions of emissive material are not in a high-energy state. In use, the surface film diaphragm is located in the direct optical path of the radiation used in the lithography equipment (such as EUV radiation). Combined with operation at low ambient pressures, this results in the diaphragm reaching temperatures that can exceed 600°C. This can induce chemical and structural degradation of the surface film diaphragm that may lead to loss of imaging performance or even surface film failure. To reduce the operating temperature of the surface film, one or more emissive layers are typically included to increase the emissivity of the surface film, thereby reducing the operating temperature of the surface film at a given power. A continuous diaphragm film with an emitting layer operates at temperatures ranging from 400°C to 650°C in an EUV lithography apparatus (where the EUV source power ranges from 150 W to 300 W at the central focal point), with higher temperatures expected with higher power sources. Additionally, a capping layer can be provided to reduce or prevent chemical degradation of the diaphragm film. To maintain acceptable transmittance and infrared (IR) emissivity of the diaphragm film, one or more emitting metal or conductive layers are relatively thin. However, metal films deposited on inert substrates are in an energy-disadvantaged state. Heating the metal diaphragm film on top of an inert (non-metallic) substrate leads to thermal instability at temperatures well below the melting point of the metal. Due to sufficient activation energy, the diaphragm forms pores through a surface diffusion process, and these pores grow over time at a rate strongly dependent on temperature. As the pores coalesce, the material on the surface forms islands of irregular shapes. This process is known as dewetting and island formation. By providing an adhesion layer between the metal film and the substrate, dewetting and island formation can be reduced, but the metal film remains in an energy-disadvantaged state. Once the thin metal layer applied to the surface film breaks into multiple islands, it loses its high emissivity performance and thus becomes useless.

[0028] The membrane diaphragm can have a thickness ranging from about 10 nm to about 50 nm. It will be understood that a thinner diaphragm will have a higher transmittance, but will be weaker in mechanical properties compared to a thicker diaphragm.

[0029] The surface membrane diaphragm can be porous. Since a sealing layer is not required, the diaphragm can be porous. One advantage of this is that it reduces any pressure differential across the surface membrane diaphragm, thus minimizing the likelihood of sagging. Therefore, the minimum required level of prestress or residual stress is lower than that of its corresponding continuous membrane.

[0030] The separator may not include multiple stacked layers. In other surface membrane separators, there is a series of stacked layers, such as a surface core layer and an emissive metal layer. These layers may delaminate during use, which is undesirable. These stacked layers also need to be precisely laid in a specific order, so the manufacture of these surface membranes can be lengthy and complex. The present invention eliminates the need for multiple stacked layers, which makes manufacturing shorter and simpler.

[0031] The surface membrane may contain molybdenum, zirconium, tungsten, and / or ruthenium in amounts of about 2% to about 40% (atomic %), about 2% to about 30% (atomic %), about 2% to about 20% (atomic %), or about 5% to about 10% (atomic %). The emissivity of the surface membrane is largely related to the amount of the emissive material (i.e., the material included in the membrane specifically to increase emissivity). A lower amount of this material results in a lower emissivity. This is thought to lead to an increase in operating temperature due to the membrane's lower efficiency in radiating any absorbed power. However, as the amount of emissive material decreases, the transmissivity of the surface membrane increases, which reduces the amount of absorbed power.

[0032] The diaphragm can be the membrane core. Therefore, one or more other layers can be provided to modify the properties of the diaphragm. The membrane core can be attached to a frame to provide a membrane assembly.

[0033] The matrix material can be non-filamentous. Non-filamentous means that the matrix material is not in the form of filaments, such as carbon nanotubes or nanotubes of other materials.

[0034] The matrix material may not include carbon. Therefore, the matrix material can be any material other than carbon.

[0035] According to a second aspect of the invention, a method for manufacturing a surface membrane according to a first aspect of the invention is provided. The method may include reactive physical vapor deposition or chemical vapor deposition. The method may include co-sputtering. The method may include sputtering from a single target containing components having a given elemental ratio of the target composition to achieve better deposition uniformity across the entire deposition substrate.

[0036] The method may also include an annealing step. The annealing step can be performed at any suitable temperature. For example, annealing can be performed at temperatures above 500°C, above 600°C, above 700°C, or above 800°C. Annealing provides the final density of the surface membrane and forms crystals in the matrix. The difference between the coefficient of thermal expansion of the surface membrane and the coefficient of thermal expansion of the silicon substrate on which the surface membrane is formed provides the desired level of prestress for the membrane. Annealing can be performed at temperatures up to 1200°C, up to 1100°C, up to 1000°C, or up to 900°C. It will be understood that higher annealing temperatures can be used if desired.

[0037] According to a third aspect of the present invention, a photolithography apparatus comprising a film diaphragm according to a first aspect of the present invention is provided.

[0038] According to a fourth aspect of the present invention, a surface film assembly for a photolithography apparatus is provided, the surface film assembly comprising a surface film diaphragm according to a first aspect of the present invention.

[0039] According to a fifth aspect of the invention, the use of the film diaphragm according to the first aspect in a photolithography apparatus or method is provided.

[0040] According to a sixth aspect of the invention, a method for controlling the composition of a membrane diaphragm is provided, the method comprising providing a first sputtering target and a second sputtering target, and adjusting the power provided to one or both of the first sputtering target and the second sputtering target to adjust the composition of the membrane diaphragm.

[0041] The method according to the sixth aspect of the invention can be used to manufacture a membrane diaphragm according to any aspect of the invention.

[0042] Controlling the composition ratio of the membrane and diaphragm is important. One possible method is to deposit a multilayer structure of components, which is then mixed during the annealing step. This method is limited by the thickness that can be accurately deposited and the amount of mixing between the individual layers during annealing. This can result in insufficient stress levels within the final membrane, which will hinder its use as a stand-alone membrane.

[0043] The method of this invention allows for better control over the composition of the surface membrane / diaphragm. By co-sputtering two materials and using different powers applied to the sputtering target, the final ratio of the matrix material to the inclusion material in the final surface membrane / diaphragm can be finely adjusted. In this way, an optimal balance between the transmittance and emissivity of the surface membrane / diaphragm can be achieved.

[0044] The first sputtering target may include a substrate material. The substrate material can be any substrate material described herein. Therefore, the first sputtering target may include silicon or silicon nitride. The substrate material provides physical strength to the surface membrane and also serves to support the inclusion material.

[0045] The second sputtering target may include an inclusion material. The inclusion material is preferably a material with a higher emissivity than the substrate material. The inclusion material can be any inclusion material described herein. Therefore, the second sputtering target may include molybdenum silicide, zirconium silicide, ruthenium silicide, tungsten silicide, or combinations thereof. The inclusion material is used to increase the emissivity of the surface membrane / septum.

[0046] Regarding the adjustment of the relative power applied to the first and second targets, it should be understood that the absolute values ​​of the power applied to each target can be the same or different. To increase the relative amount of a material in the final sputtering membrane, the power applied to the corresponding sputtering target can be increased. Of course, it will be understood that the relative power applied to the first and second targets can be adjusted by keeping the power applied to one target the same and increasing or decreasing the power applied to the other target.

[0047] If necessary, more than two splash targets can be used.

[0048] This method involves target power ranging from 50W to 1000W. Since the composition of the final surface and diaphragm can be adjusted by varying the power applied to the target, any suitable power can be used. The power is suitable if it is sufficient to allow sputtering and bonding of the material to the final surface and diaphragm. If the power is too low, it may not be sufficient to produce effective sputtering of the material.

[0049] The method may include providing a target power of 50 W to about 300 W to a second sputtering target to provide a surface membrane with a volume percentage of inclusion material of 10% to 60%, preferably 15% to 50%. It has been found that applying power between 50 W and 300 W can produce a surface membrane having a sputtered material content of about 10% to about 60%. Therefore, according to any aspect of the invention, the surface membrane may have a composition of about 10% to about 60% inclusion material (preferably about 15% to about 50%). The volume balance of the surface membrane may include a matrix material. In embodiments, the matrix material comprises about 90% to about 40% of the surface membrane. In embodiments, the matrix material comprises about 90%, about 80%, about 70%, about 60%, about 50%, or about 40% of the surface membrane. A suitable amount of inclusion material can be present to balance the total volume of the surface membrane. In an embodiment, the surface membrane has a minimum prestress of 100 MPa. The stress in the deposited layer according to the method of the invention or in the surface membrane according to any aspect of the invention shows a linear dependence based on the amount of molybdenum contained. In particular, when the surface membrane comprises about 4 atomic% molybdenum, the stress of the surface membrane after annealing is about -200 MPa. When it comprises about 7.5 atomic% molybdenum, the stress of the surface membrane after annealing is about 100 MPa. With higher amounts of molybdenum, the stress increases further. For example, with about 16 atomic% molybdenum, the stress after annealing is about 400 MPa, and with about 20 atomic% molybdenum, the stress after annealing is about 800 MPa.

[0050] According to a seventh aspect of the invention, a method for designing a diaphragm for a lithography apparatus is provided, the diaphragm comprising a substrate including a plurality of inclusions distributed therein and characterized by output properties that depend at least in part on input properties, the method comprising: receiving a set of input values ​​associated with the input properties; generating a set of modeled diaphragms using semi-empirical thermodynamic modeling, each modeled diaphragm being modeled based on an input value from the set of input values ​​associated with the input properties; predicting an output value associated with the output properties for each of the set of modeled diaphragms based on the model; selecting one or more diaphragms from the set of modeled diaphragms based on the predicted output values; and outputting one or more input values ​​from the set of input values ​​based on the selected one or more diaphragms.

[0051] Using this method, the properties of the membrane diaphragm can be determined to optimize its output properties for a given application. One or more diaphragms can be selected based on whether their predicted output values ​​are optimal or acceptable. The output input values ​​are used to model the selected, modeled diaphragm. These output input values ​​can also be used as inputs to the manufacturing process for producing the diaphragm. Such a diaphragm can be referred to as an optimal or optimized diaphragm.

[0052] Using this method, the diaphragm can be tested virtually without manufacturing and testing a series of diaphragms with different input properties. Advantageously, compared to conventional methods, this method provides a way to design optimal diaphragms with significantly reduced cost and / or time. This method can be implemented by a computer.

[0053] Semi-empirical thermodynamic modeling can include the CALculation of PHAse Diagrams (CALPHAD) method.

[0054] The method may also include using experimental data to verify one or more values.

[0055] This data may include empirically measured data. It may include data from a range of measured properties. These values ​​may be input and / or output values. These values ​​may include other values ​​associated with the model (e.g., Gibbs energy).

[0056] The method may further include: receiving a set of second input values ​​associated with a second input property, wherein the output property depends at least in part on the second input property; and outputting one or more second input values ​​from the set of second input values ​​based on one or more selected diaphragms; wherein each modeled diaphragm is further modeled based on a second input value from the set of second input values ​​associated with the second input property.

[0057] That is, the method may include modeling the diaphragm based on multiple input properties.

[0058] The method may further include: predicting a second output value associated with a second output property for each of the set of modeled diaphragms, the second output property depending at least in part on the input property and / or the second input property; wherein one or more diaphragms are selected based on the predicted second output value.

[0059] That is, the method may include determining multiple output properties of the diaphragm. The selected diaphragm may be chosen based on the optimal and / or acceptable values ​​of the output value and the second output value.

[0060] Selecting one or more diaphragms can be based on comparing the predicted output value of the first diaphragm in the set of modeled diaphragms with the predicted output value of the second diaphragm in the set of modeled diaphragms; or, comparing the predicted output value of the first modeled diaphragm in the set of modeled diaphragms with a threshold.

[0061] That is, a modeling diaphragm can be selected based on being considered better or better than other modeling diaphragms. Optionally, a modeling diaphragm can be selected based on exceeding a threshold (e.g., a level of acceptability associated with the output value). In some cases, a modeling diaphragm can be selected only if it is considered better or better than another modeling diaphragm and exceeds a threshold.

[0062] The predicted output value can be either the first output value or a second output value. The comparison may include determining whether the predicted output value of the first diaphragm is greater than or less than the predicted output value of the second diaphragm. A threshold may represent an expected value associated with the output properties, and diaphragms whose output properties exceed this threshold are determined to be expected. A threshold may also represent an acceptable value associated with the output properties, and diaphragms whose output properties exceed this threshold are determined to be acceptable.

[0063] Input properties, and optionally, second input properties, may include one of the following: matrix composition, inclusion concentration, inclusion composition, inclusion distribution, diaphragm thickness, diaphragm thickness variation, diaphragm porosity, amount of diaphragm prestress, manufacturing method and properties associated with the manufacturing method, processing method, annealing temperature, annealing heating gradient, and gas atmosphere. This list is not exhaustive, and other input properties may also affect the output properties of the diaphragm, whether mentioned herein or otherwise.

[0064] The output properties, and optionally, the second output property, may include one of the following: inclusion concentration, inclusion distribution, membrane thickness, membrane thickness variation, membrane porosity, amount of membrane prestress, membrane emissivity, membrane transmittance, and membrane sensitivity. These are not exhaustive, and other output properties may be used to characterize the membrane, whether mentioned herein or otherwise.

[0065] The method may also include using one or more output input values, and optionally, using one or more second output input values ​​to manufacture the diaphragm. That is, the output values ​​can be used as inputs to the manufacturing process.

[0066] According to an eighth aspect of the present invention, a surface film diaphragm for a photolithography apparatus designed according to the method of the seventh aspect is described.

[0067] According to a ninth aspect of the invention, a computer program is described, the computer program comprising instructions operable to perform the method according to the seventh aspect.

[0068] According to a tenth aspect of the present invention, a computer storage medium comprising a computer program according to the ninth aspect is described.

[0069] It will be understood that features described with respect to one embodiment may be combined with any features described with respect to another embodiment, and all such combinations are expressly contemplated and disclosed herein. Attached Figure Description

[0070] Embodiments of the invention will now be described by way of example only with reference to the accompanying drawings, in which corresponding reference numerals denote corresponding parts, and wherein:

[0071] Figure 1 A photolithography apparatus according to an embodiment of the present invention is shown.

[0072] The features and advantages of the invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which similar reference numerals denote corresponding elements. In the drawings, similar reference numerals generally denote identical, functionally similar, and / or structurally similar elements. Detailed Implementation

[0073] Figure 1A lithography system according to the present invention includes a surface film 15 (also referred to as a diaphragm assembly). The lithography system includes a radiation source SO and a lithography apparatus LA. The radiation source SO is configured to generate an extreme ultraviolet (EUV) radiation beam B. The lithography apparatus LA includes an illumination system IL, a support structure MT configured to support a pattern forming apparatus MA (e.g., a mask), a projection system PS, and a substrate stage WT configured to support a substrate W. The illumination system IL is configured to adjust the radiation beam B before it is incident on the pattern forming apparatus MA. The projection system is configured to project the radiation beam B (now patterned by the mask MA) onto the substrate W. The substrate W may include a previously formed pattern. In this case, the lithography apparatus aligns the patterned radiation beam B with the pattern previously formed on the substrate W. In this embodiment, the surface film 15 is described as being in the radiation path and protecting the pattern forming apparatus MA. It will be understood that the surface film 15 can be located wherever needed and can be used to protect any mirrors in the lithography apparatus.

[0074] The radiation source SO, the irradiation system IL, and the projection system PS can all be constructed and arranged to isolate them from the external environment. A gas at a pressure below atmospheric pressure (e.g., hydrogen) can be supplied to the radiation source SO. A vacuum can be provided in the irradiation system IL and / or the projection system PS. A small amount of gas at a pressure far below atmospheric pressure (e.g., hydrogen) can be supplied to the irradiation system IL and / or the projection system PS.

[0075] Figure 1 The radiation source SO shown is of the type that can be referred to as a laser-generated plasma (LPP) source. A laser (which may be, for example, a CO2 laser) is arranged to deposit energy via a laser beam onto a fuel (such as tin (Sn) provided by a fuel emitter). Although tin is referenced in the description below, any suitable fuel can be used. The fuel may be, for example, in liquid form and may be, for example, a metal or alloy. The fuel emitter may include a nozzle configured to guide the tin, for example, in droplet form, along a trajectory toward the plasma-forming region. The laser beam is incident on the tin in the plasma-forming region. The deposition of laser energy into the tin causes plasma to be generated in the plasma-forming region. During the deexcitation and recombination of ions in the plasma, radiation, including EUV radiation, is emitted from the plasma.

[0076] EUV radiation is collected and focused by a near-normal incident radiation collector (sometimes more generally referred to as a normal incident radiation collector). The collector may have a multi-layered structure arranged to reflect EUV radiation (e.g., EUV radiation with a desired wavelength such as 13.5 nm). The collector may have an elliptical configuration with two elliptical foci. The first focal point may be located at the plasma formation region, and the second focal point may be located at the intermediate focal point, as discussed below.

[0077] The laser can be separated from the radiation source SO. In this case, the laser beam can be transmitted from the laser to the radiation source SO by means of a beam delivery system (not shown) and / or other optical devices, including, for example, a suitable directional mirror and / or beam expander. The laser and the radiation source SO can be considered together as a radiation system.

[0078] Radiation reflected by the collector forms a radiation beam B. Radiation beam B is focused at a point to form an image of the plasma formation region, which serves as a virtual radiation source for irradiating the system IL. The point where radiation beam B is focused can be called the intermediate focus. The radiation source SO is arranged such that the intermediate focus is located at or near an opening in the closed structure of the radiation source.

[0079] A radiation beam B is transmitted from a radiation source SO to an illumination system IL, which is configured to modulate the radiation beam. The illumination system IL may include a faceted field mirror assembly 10 and a faceted pupil mirror assembly 11. Together, the faceted field mirror assembly 10 and the faceted pupil mirror assembly 11 provide the radiation beam B with a desired cross-sectional shape and a desired angular distribution. The radiation beam B passes through the illumination system IL and is incident on a pattern forming apparatus MA held by a support structure MT. The pattern forming apparatus MA reflects and patternes the radiation beam B. The illumination system IL may include other mirrors or devices besides or replacing the faceted field mirror assembly 10 and the faceted pupil mirror assembly 11.

[0080] After reflection from the patterning apparatus MA, the patterned radiation beam B enters the projection system PS. The projection system includes multiple mirrors 13 and 14 configured to project the radiation beam B onto the substrate W held by the substrate stage WT. The projection system PS can apply a reduction factor to the radiation beam to form an image with features smaller than those on the corresponding features of the patterning apparatus MA. For example, a reduction factor of 4 can be applied. Although in Figure 1 In the projection system PS, there are two mirrors 13 and 14, but the projection system can include any number of mirrors (e.g., six mirrors).

[0081] Figure 1 The radiation source SO shown may include components not shown. For example, a spectral filter may be incorporated into the radiation source. The spectral filter can essentially transmit EUV radiation, but essentially blocks radiation of other wavelengths (such as infrared radiation).

[0082] In an embodiment, the diaphragm assembly 15 is a surface layer of a patterning apparatus MA for EUV lithography. The diaphragm assembly 15 of the present invention can be used for dynamic gas locks, surface layers, or other purposes. In an embodiment, the diaphragm assembly 15 comprises a diaphragm formed of at least one diaphragm layer configured to transmit at least 90% of the incident EUV radiation. To ensure maximum EUV transmission and minimize the impact on imaging performance, it is preferable to support the diaphragm only at the boundaries.

[0083] If the pattern forming apparatus MA is not protected, it may require cleaning contaminants or disposal. Cleaning the pattern forming apparatus MA will interrupt valuable manufacturing time, and discarding it will be costly. Replacing the pattern forming apparatus MA will also interrupt valuable manufacturing time.

[0084] In the method according to a sixth aspect of the invention, the (atomic or mass) ratio of the matrix material to the inclusion material can be adjusted by adjusting the power applied to the sputtering target comprising the matrix material and / or adjusting the power applied to the sputtering target. The following description relates to a silicon matrix and molybdenum silicide crystal inclusions; however, it should be understood that this is merely exemplary and it equally applies to any combination of matrix and inclusion materials described herein.

[0085] Table 1 below shows the differences in the amount of molybdenum silicide in the surface membrane and the diaphragm, and how the power applied to the molybdenum silicide target affects these differences.

[0086] As can be seen from Table 1 below, by increasing the power applied to the molybdenum silicide target, the density of the final surface membrane and the volume percentage of molybdenum silicide in the surface membrane and the diaphragm can be increased (volume percentage). The power applied to the silicon target is kept constant, but it will be understood that the power of the silicon target can be adjusted in other embodiments of the method.

[0087] Table 1

[0088]

[0089] The diaphragm produced by co-sputtering can undergo further processing steps as needed, including but not limited to annealing. The method of co-sputtering two targets results in a deposited layer with residual stress of less than 1 GPa after annealing. Therefore, this diaphragm can be used as a freestanding surface membrane diaphragm, which was not possible using other methods previously.

[0090] Example

[0091] The following examples provide specific embodiments of the present invention. These examples are not intended to limit the scope of the invention.

[0092] Example 1 - MoSi crystals in an amorphous SiN matrix

[0093] This surface-film separator can be fabricated by reactive physical vapor deposition on a MoSi2 target in a nitrogen-rich environment. Subsequently, the separator is annealed at high temperatures (particularly exceeding at least 700°C). Annealing can be performed at temperatures up to 1200°C, 1100°C, 1000°C, or 900°C. It will be understood that higher annealing temperatures can be used if desired. The annealing step provides the final density of the separator and forms molybdenum silicide crystals that are randomly scattered within the SiN matrix. SiN reduces the coefficient of thermal expansion (CTE) of the separator, thereby reducing the CTE difference between the separator and the silicon substrate wafer formed on the separator during the annealing step. This allows for the desired amount of prestress in the separator. The molybdenum silicide crystals provide the separator with emission properties that reduce the operating temperature of the surface-film separator in use. In this way, separators with a thickness of less than 25 nm can be provided, exhibiting close to 90% EUV transmittance and capable of withstanding exposure to EUV radiation, hydrogen plasma, and temperatures observed under scanner conditions using a 600W power supply. Alternatively, the surface membrane is fabricated by co-sputtering a molybdenum silicide target and a silicon nitride target, wherein the power applied to each target is adjusted to change the relative ratio of silicon nitride to molybdenum silicide in the final membrane. As with surface membranes fabricated by reactive physical vapor deposition, a subsequent annealing step may be present.

[0094] Example 2 - MoSi crystals in a polycrystalline silicon (p-Si) matrix

[0095] The surface membrane can be fabricated using co-sputtering (physical vapor deposition against multiple targets) with a molybdenum target and a silicon target. It will be understood that a molybdenum silicide target and a silicon target can also be used. It will also be understood that a single target containing a given ratio of molybdenum and silicon can also be used. The power supplied to the target can be selected to provide silicon-rich deposition. After annealing, the molybdenum forms molybdenum silicide, while the remaining silicon forms p-Si, resulting in a composite material. P-Si is highly transparent to EUV radiation, so the membrane thickness can be increased to make it physically more robust with only a small sacrifice in EUV transmittance. In this way, a membrane with a thickness of approximately 20 nm can be fabricated, exhibiting over 90% EUV transmittance. If desired, a slightly thicker membrane of approximately 40 nm can be produced, still exhibiting approximately 90% EUV transmittance. The slightly thicker membrane requires a lower level of prestress to prevent surface membrane sagging.

[0096] Example 3 -- MoSi crystals in SiC matrix

[0097] The main advantage of this combination lies in EUV transmission. Carbon absorbs less EUV than nitrogen, and if all the nitrogen were replaced by carbon, it should provide a ~3% EUVT benefit compared to MoSiN.

[0098] Selection of diaphragm properties

[0099] A variety of properties can be used to characterize the surface membrane, such as: matrix density, matrix composition, inclusion concentration (e.g., volume percentage in the matrix, and / or relative concentration of the material within the inclusion), inclusion composition, inclusion distribution, membrane thickness, membrane thickness variation, membrane porosity, amount of membrane prestress, membrane emissivity, membrane transmittance, and membrane sensitivity (e.g., sensitivity to temperature and pressure). External properties can also affect the properties of the surface membrane, such as: manufacturing methods and properties associated with those methods (e.g., power applied to the sputtering target in sputtering or co-sputtering methods), annealing methods (e.g., electron beam annealing, rapid thermal annealing) and properties associated with those methods (e.g., annealing temperature, annealing heating gradient), properties associated with other processing steps, and the gas atmosphere in which manufacturing annealing or other processing steps are performed. Annealing can be considered a processing step.

[0100] Some properties (referred to herein as input properties) do not significantly depend on other properties. Input properties can be selected by the user as inputs for manufacturing the membrane diaphragm. That is, input properties are independent variables related to the manufacturing of the membrane diaphragm. Input properties can be referred to as independent variables. Examples of input properties are matrix composition, inclusion composition, and manufacturing method.

[0101] Some properties (referred to herein as output properties) depend at least in part on other properties. That is, output properties are dependent variables and can be referred to as dependent variables. Therefore, output properties cannot be directly selected, but can be obtained by selecting input properties. Output properties may depend only on input properties, may depend only on other output properties, or may depend on a combination of input and output properties. Examples of output properties are matrix density (which may depend at least on the power applied to the sputtering target) and surface transmissivity (which may depend at least on matrix density, matrix composition, and membrane thickness). Output properties include properties of the membrane itself and can be referred to as membrane properties.

[0102] The input properties of a membrane diaphragm can be selected to optimize its output properties for a given application. Given a wide range of properties and a range of possible values ​​for each property, it is impractical to manufacture a membrane diaphragm for every combination of properties and their values. Instead, modeling the properties of the diaphragm allows for the selection of a set of optimal properties for a given application. Using thermodynamic modeling, a wide range of membrane diaphragms can be virtually tested. That is, the properties of the diaphragm can be determined without the need for the entire process of manufacturing and testing such a diaphragm. This process of manufacturing and testing diaphragms can be expensive and / or time-consuming (e.g., approximately several months). Therefore, manufacturing and testing diaphragms with different properties is even more expensive and / or time-consuming. By iteratively performing virtual tests, a large solution space can be scanned, thereby determining a set of optimal properties for a given application with significantly reduced cost and / or time. Determining a set of optimal properties for the diaphragm can be referred to as designing the diaphragm.

[0103] Thermodynamic modeling, particularly semi-empirical thermodynamic modeling, can be used. Semi-empirical methods use experimental data to validate thermodynamic calculations. For example, experimental data may include single-point experimental data. Optionally or additionally, experimental data may include data from a range of measured properties of the material or from databases such as the Gibbs energy database.

[0104] In a specific example, phase diagram computation (CALPHAD) is used. The CALPHAD method models the properties of the components of the system and uses them to predict the properties of the entire system.

[0105] In an exemplary method, input properties (i.e., parameters associated with the input properties that incrementally change from a first value to a second value) are scanned, and for each value of said input property, an output parameter is predicted. For example, using an example of a film separator according to Example 2 above (comprising MoSi crystals in a polycrystalline silicon (p-Si) matrix), the temperature sensitivity of the film for annealing temperatures in the range of 500 to 1000ºC is predicted. The model output includes data on the predicted temperature sensitivity for each tested annealing temperature. Based on the output data, an optimal temperature sensitivity (e.g., the lowest predicted temperature sensitivity) can be identified, and thus an optimal annealing temperature associated with the identified optimal temperature sensitivity can be identified. This optimal annealing temperature can then be used in future manufacturing processes to fabricate a film with reduced temperature sensitivity.

[0106] The method described above is a single-input, single-output modeling approach. In another approach, multiple outputs can be predicted. For example, the model described above can output data including predicted temperature sensitivity and predicted surface membrane transmittance for each annealing temperature. That is, the output data is a multidimensional matrix of values. Optimal temperature sensitivity and / or optimal transmittance can be identified, and therefore one or more corresponding optimal annealing temperatures can be identified. One or more annealing temperatures that produce acceptable temperature sensitivity and acceptable transmittance can be identified. That is, a range of input values ​​that produce acceptable combinations of output values ​​can be identified.

[0107] The above method is a single-input multiple-output modeling approach. In another approach, multiple inputs can be used. For example, using the same example of the membrane diaphragm according to Example 2, the temperature sensitivity of the membrane is predicted for a range of values ​​for the following set of input properties: annealing temperature in the range of 500ºC to 1000ºC, and annealing temperature in the range of 1ºCs. -1 Up to 5ºCs -1 Heating gradient within the range, at 1ºCs -1 Up to 5ºCs -1 The model considers the cooling gradient within a given range and different gas environments (hydrogen, nitrogen). The model output includes data on the predicted temperature sensitivity for each combination of values ​​for each input property. That is, the output data is a multidimensional matrix of values. The optimal temperature sensitivity (e.g., the lowest predicted temperature sensitivity) can be identified from the output data, thus identifying the optimal set of input property values ​​associated with the identified optimal temperature sensitivity.

[0108] Accordingly, multi-input multi-output (MIMO) modeling methods can be used. For example, using a surface membrane containing MoSiN (nitrogen-doped MoSi) crystals in a substrate, temperature and pressure sensitivity (e.g., gas pressure) can be predicted for the following set of input properties: doping method (e.g., co-sputtering, diffusion from a sacrificial layer, implantation) and dopant concentration (e.g., 0% to 5%). The output is a multidimensional matrix of values ​​from which the optimal set of input and output values ​​or an acceptable range of input and output values ​​can be identified.

[0109] By outputting optimal input values, the output input values ​​can be provided to the manufacturing process; for example, the output input values ​​can be used to manufacture a diaphragm. In this way, the optimized diaphragm can be manufactured using the design process described above. Optionally, the output input values ​​and / or output values ​​can be stored or used as input for future design processes.

[0110] The above modeling method (i.e., the design process) is specifically used for the following applications.

[0111] Sensitivity analysis.Surface membranes are typically sensitive to temperature and / or pressure. By modeling surface membranes using various properties, one or more optimal sets of input properties can be identified that can be used to produce surface membranes with optimized (i.e., reduced) sensitivity. Specifically, the following input properties are fed into the model: inclusion composition and dopant concentration (e.g., the relative concentrations of N, Mo, and Si in a surface membrane comprising MoSiN crystals in a matrix), annealing temperature, annealing gradient, annealing type, annealing atmosphere, surface membrane thickness, and inclusion distribution (e.g., point defect engineering).

[0112] Identify material combinations. Multiple materials can be used for inclusions and / or the matrix. The modeling described above can be used to identify the optimal combination of materials. The optimal combination is determined based on one or more optimal output properties or acceptable ranges of output properties (e.g., membrane transmittance and / or stability properties). In particular, the following input properties are fed into the model: inclusion composition (e.g., inclusion materials such as C, Si, Mo, Ru, N, O, B, Hf, Zr, Nb, Y and their relative concentrations), dopant concentration, fabrication method, and doping method.

[0113] Optimize manufacturing methods. By modeling the properties of the surface membrane and separator associated with a range of manufacturing and / or processing methods, manufacturing and processing methods that optimize one or more properties of the surface membrane and separator (as well as their optimal properties) can be identified without actually manufacturing large quantities of surface membranes. Specifically, the following input properties are fed into the model: manufacturing method, doping method, annealing method, annealing temperature, annealing gradient, and gas atmosphere.

[0114] Considering the selection of optimal (or acceptable) properties, they can be determined in several ways. Optimal properties can be determined by comparing a set of output properties predicted by the method and selecting the optimal (e.g., maximum or minimum) value. Alternatively, optimal or acceptable properties can be determined by comparing a set of output properties predicted by the model with a threshold and selecting all predicted output properties that exceed the threshold.

[0115] When referring to a predicted output property, it should be understood that the prediction can be a prediction of the value associated with the output property. Similarly, for providing or receiving input properties, this can include providing or receiving the value associated with the input property.

[0116] The modeling method described in this paper can be implemented as instructions in a computer program. That is, the modeling method can be implemented by a computer. Such a computer program can be stored on a computer storage medium.

[0117] While specific references may be made herein to the use of lithography equipment in IC manufacturing, it should be understood that the lithography equipment described herein can have other applications, such as fabricating integrated optical systems, guiding and detecting patterns for magnetic domain memory, flat panel displays, liquid crystal displays (LCDs), and surface-mount / septum magnetic heads. The substrates mentioned herein can be processed before or after exposure in, for example, tracks (tools that typically apply a resist layer to the substrate and develop the exposed resist), metrology tools, and / or inspection tools. Where applicable, the content of this document can be applied to these and other substrate processing tools. Furthermore, substrates can be processed more than once, for example, to form multilayer ICs, such that the term "substrate" as used herein may also refer to a substrate that already contains multiple processed layers.

[0118] While specific embodiments of the invention have been described above, it will be understood that the invention may be practiced in other ways than those described.

[0119] The above description is intended to be illustrative and not restrictive. Therefore, it will be apparent to those skilled in the art that modifications can be made to the described invention without departing from the scope of the claims set forth below.

Claims

1. A diaphragm for a photolithography apparatus, the diaphragm being formed of a composite material, the diaphragm comprising a matrix, the matrix comprising a plurality of inclusions distributed therein; The plurality of inclusions include a plurality of crystals; in, The diaphragm does not include stacked layers.

2. A surface film diaphragm for a photolithography apparatus, the diaphragm being formed of a composite material, the diaphragm comprising a matrix, the matrix comprising a plurality of inclusions distributed therein; The matrix comprises polycrystalline silicon or silicon carbide, and the plurality of inclusions comprise molybdenum silicide crystals; in, The diaphragm does not include stacked layers.

3. A film diaphragm for a photolithography apparatus, the diaphragm comprising a substrate, the substrate comprising a plurality of inclusions distributed therein; The plurality of inclusions include a plurality of crystals; in, The crystal comprises a first material, the matrix comprises a second material, and the emissivity of the first material is greater than the emissivity of the second material; The diaphragm has a thickness of 50 nm or less and does not include stacked layers.

4. The membrane diaphragm according to claim 1 or 3, wherein the crystals are randomly distributed.

5. The membrane diaphragm according to any one of claims 1 or 3, wherein, The inclusions or crystals include molybdenum silicide, zirconium silicide, ruthenium silicide, tungsten silicide, or combinations thereof.

6. The membrane according to claim 1 or 3, wherein the substrate comprises silicon.

7. The membrane diaphragm according to claim 6, wherein, The substrate comprises silicon nitride.

8. The membrane diaphragm according to claim 6, wherein, The silicon includes any one of amorphous silicon, polycrystalline silicon, monocrystalline silicon, or combinations thereof.

9. The membrane diaphragm according to any one of claims 1-3, wherein, The diaphragm does not include a metal coating.

10. The membrane diaphragm according to any one of claims 1-3, wherein, The diaphragm has a thickness ranging from 10 nm to 50 nm.

11. The membrane diaphragm according to any one of claims 1-3, wherein, The diaphragm is porous.

12. The membrane diaphragm according to claim 2, wherein the diaphragm is formed of at least one membrane layer, the at least one membrane layer being configured to transmit 90% of the incident EUV radiation.

13. The membrane diaphragm according to claim 5, wherein, The membrane contains a total amount of molybdenum, zirconium, tungsten and / or ruthenium of 2 atomic percent to 40 atomic percent, or the membrane has a composition of inclusion material of 10 percent to 60 percent by volume.

14. The membrane diaphragm according to any one of claims 1-3, wherein, The diaphragm includes a surface membrane core.

15. The membrane diaphragm according to any one of claims 1-3, wherein, The matrix material is non-filamentous.

16. The membrane diaphragm according to claim 1 or 3, wherein, The matrix material does not include carbon.

17. The membrane diaphragm of claim 13, wherein the membrane contains a total amount of molybdenum, zirconium, tungsten and / or ruthenium of 2 atomic percent to 30 atomic percent, or wherein the membrane has a composition of inclusion material of 15 percent to 50 percent by volume.

18. The membrane diaphragm according to claim 17, wherein the membrane contains a total amount of molybdenum, zirconium, tungsten and / or ruthenium of 2 atomic percent to 10 atomic percent.

19. A method for manufacturing a membrane diaphragm according to any one of the preceding claims, the method comprising: Reactive physical vapor deposition, chemical vapor deposition, or co-sputtering.

20. The method of claim 19, further comprising an annealing step.

21. A photolithography apparatus, the photolithography apparatus comprising a film separator according to any one of claims 1 to 18.

22. A film assembly for a photolithography apparatus, the film assembly comprising a film separator according to any one of claims 1 to 18.

23. Use of the film separator according to any one of claims 1 to 18 in a photolithography apparatus or method.

24. A method for controlling the composition of a membrane diaphragm, the diaphragm comprising a matrix, the method comprising: A sputtering target is provided, and power is adjusted to regulate the composition of the surface membrane diaphragm; The method includes: providing a first sputtering target and a second sputtering target, and adjusting the power provided to one or both of the first sputtering target and the second sputtering target to adjust the composition of the surface membrane diaphragm; The first sputtering target includes a substrate material, wherein the substrate material includes silicon, silicon nitride, or silicon carbide; The second sputtering target includes an inclusion material, wherein the inclusion material includes molybdenum silicide, zirconium silicide, ruthenium silicide, tungsten silicide, or a combination thereof; The substrate comprises polycrystalline silicon, silicon nitride, or silicon carbide, and includes inclusions comprising molybdenum silicide crystals, zirconium silicide crystals, ruthenium silicide crystals, tungsten silicide crystals, or combinations thereof, wherein the inclusions are distributed within the substrate. The diaphragm does not include stacked layers.

25. The method according to claim 24, wherein, Use more than two sputtering targets.

26. The method according to claim 24 or 25, wherein, The method includes a target power of 50W to 1000W.

27. The method according to claim 24 or 25, wherein, The method includes: providing a target power of 50W to 300W to the second sputtering target to provide a surface membrane, wherein the volume percentage of the inclusion material of the surface membrane is 10% to 60%.

28. The method of claim 27, wherein the volume percentage of the inclusion material of the membrane diaphragm is 15% to 50%.

29. A method for designing a diaphragm for a photolithography apparatus, the diaphragm being formed of a composite material, the diaphragm comprising a matrix, the matrix comprising a plurality of inclusions distributed therein, wherein the plurality of inclusions comprises a plurality of crystals, and the diaphragm not comprising stacked layers, and the diaphragm being characterized by output properties that depend at least in part on input properties, the method comprising: Receive a set of input values ​​associated with the input property; A set of modeled membranes is generated using semi-empirical thermodynamic modeling, each modeled membrane being modeled based on an input value from the set of input values ​​associated with the input property; Based on the model, predict the output value associated with the output property for each of the set of modeled diaphragms; Based on the predicted output values, select one or more diaphragms from the set of modeled diaphragms; and The output is based on one or more diaphragm values ​​selected from the set of input values.

30. The method according to claim 29, wherein, The semi-empirical thermodynamic modeling includes a phase diagram calculation method.

31. The method of claim 29 or 30 further includes using experimental data to verify one or more values.

32. The method according to claim 29 or 30, further comprising: Receive a set of second input values ​​associated with a second input property, wherein the output property depends at least in part on the second input property; and Based on the selected one or more diaphragms, the output is one or more second input values ​​derived from the set of second input values; Each modeled diaphragm is further modeled based on a second input value from the set of second input values ​​associated with the second input property.

33. The method of claim 32, further comprising: Based on the model, predict a second output value associated with a second output property for each of the set of modeled diaphragms, the second output property depending at least in part on the input property and / or the second input property; In addition, one or more diaphragms are selected based on the predicted second output value.

34. The method of claim 29 or 30, wherein the selection of the one or more diaphragms is based on: Compare the predicted output value of the first diaphragm in the set of modeled diaphragms with the predicted output value of the second diaphragm in the set of modeled diaphragms; and / or The predicted output value of the first modeled diaphragm in the set of modeled diaphragms is compared with a threshold.

35. The method according to claim 32, wherein, The input properties and the second input properties include one of the following: matrix composition, inclusion concentration, inclusion composition, inclusion distribution, diaphragm thickness, diaphragm thickness variation, diaphragm porosity, amount of diaphragm prestress, manufacturing method and properties associated with the manufacturing method, processing method, annealing temperature, annealing heating gradient, and gas atmosphere.

36. The method according to claim 32, wherein, The output property and the second output property include one of the following: inclusion concentration, inclusion distribution, membrane thickness, membrane thickness variation, membrane porosity, amount of membrane prestress, membrane emissivity, membrane transmittance, and membrane sensitivity.

37. The method of claim 32, further comprising using one or more output input values ​​and using one or more second output input values ​​to manufacture a diaphragm.

38. A film diaphragm for a photolithography apparatus designed according to any one of claims 29 to 37.

39. A computer product comprising instructions operable to perform the method according to any one of claims 29 to 37.

40. A computer storage medium comprising the computer product according to claim 39.

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