Method for manufacturing microstructures

Abstract

A method for manufacturing microstructure is provided, said method comprising adopting hydrogen fluoride (HF) vapor etching silicon dioxide (SiO 2 ) sacrificial layer, and then removing the residual layer formed when the silicon dioxide layer described in the HF vapor etching. Said residual layer can comprise silicon, ammonium salt or carbon, and discloses the multiple technology for removing these layers. These technologies can be applied to or be applied to said microstructure simultaneously. Therefore, compared with those technologies known in the art, the microstructure manufactured by said method shows the residue level that reduces.

Images