Plasma processing apparatus and substrate support

Abstract

The present invention provides a plasma processing apparatus and a substrate support section, which can extend the gas flow path length of a gas flow path member without changing the size of the arrangement area of the gas flow path member. The plasma processing apparatus includes a processing vessel, an electrode arranged inside the processing vessel and capable of being applied with a desired high-frequency electric power, a member having the electrode, and a buried member arranged in the member, the buried member being composed of a first member and a second member, the first member being formed with one or more outer flow paths in the outer periphery, the second member being formed with one or more inner flow paths connected to the outer flow paths by being joined with the first member, and the outer flow paths and the inner flow paths being in communication.

Description

Technical Field

[0001] The present invention relates to a plasma processing apparatus and a substrate support. Background Technology

[0002] For example, Patent Document 1 discloses a technique in which multiple gas flow path components with different structures are stacked inside a gas inlet pipe to prevent abnormal discharge from occurring in the gas inlet pipe that penetrates the substrate support. Patent Document 2 discloses a gas flow path component that prevents charged particles from entering the buffer chamber of the upper electrode and causing abnormal discharge. Patent Document 3 discloses a gas flow path component that, in a device for applying a DC voltage to the upper electrode, prevents abnormal discharge from occurring near the upper electrode by applying a DC voltage.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 6-244119

[0006] Patent Document 2: Japanese Patent Application Publication No. 2004-356531

[0007] Patent Document 3: Japanese Patent Application Publication No. 2013-149865 Summary of the Invention

[0008] The technical problem that the invention aims to solve

[0009] This invention provides a technique that can extend the gas flow path length of a gas flow path component without changing the size of the configuration area of ​​the gas flow path component.

[0010] Technical solutions for solving technical problems

[0011] According to one aspect of the present invention, a plasma processing apparatus is provided, comprising: a processing container; an electrode disposed inside the processing container and capable of being applied a desired high-frequency electrical power; a component having the electrode; and an embedded component disposed in the component, the embedded component being composed of a first component and a second component, the first component forming one or more outer flow paths on its outer periphery, and the second component forming one or more inner flow paths connected to the outer flow paths by engaging with the first component, the outer flow paths communicating with the inner flow paths.

[0012] Invention Effects

[0013] On the one hand, it is possible to extend the gas flow path length of the gas flow path component without changing the size of the configuration area of ​​the gas flow path component. Attached Figure Description

[0014] Figure 1 This is a cross-sectional schematic diagram illustrating an example of a plasma processing system according to an embodiment.

[0015] Figure 2 This is a diagram illustrating an example of a plasma processing apparatus according to an embodiment.

[0016] Figure 3 (a) represents an example of an existing embedded component. Figure 3 (b) is a diagram showing an example of an embedded component in an embodiment.

[0017] Figure 4 This is a diagram illustrating an example of Paschen's Law.

[0018] Figure 5 This is a diagram illustrating Embodiment 1 of the embedded component in the implementation method.

[0019] Figure 6 This is a diagram illustrating Embodiment 2 of the embedded component in the implementation method.

[0020] Figure 7 This is a diagram illustrating another embodiment of the embedded component in the implementation method.

[0021] Explanation of reference numerals in the attached figures

[0022] 1. Plasma processing device

[0023] 2 Control Department

[0024] 2a Computer

[0025] 2a1 Processing Department

[0026] 2a2 Storage Unit

[0027] 2a3 Communication Interface

[0028] 10. Plasma processing chamber

[0029] 11. Substrate support

[0030] 13 Spray heads

[0031] 14c Outer Flow Path

[0032] 15c, 15d inner flow paths

[0033] 21 Gas Source

[0034] 20 Gas Supply Department

[0035] 30 power supply

[0036] 31 RF Power Supply

[0037] 31a First RF Generation Unit

[0038] 31b Second RF Generation Unit

[0039] 32a First DC Generation Unit

[0040] 32b Second DC Generation Unit

[0041] 40 Exhaust System

[0042] 111 Main Body

[0043] 111c Through Hole

[0044] 112 Ring-shaped component

[0045] 113 Electrostatic Chuck

[0046] 113c Through Hole

[0047] 114 Embedded components

[0048] 116 Abutment. Detailed Implementation

[0049] Hereinafter, embodiments for carrying out the present invention will be described with reference to the accompanying drawings. In the drawings, the same reference numerals are used to label the same components, and sometimes repeated descriptions are omitted.

[0050] [Plasma Processing System]

[0051] The following is about Figure 1 The structure of the plasma processing system shown will be described below. In this embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing apparatus 1 includes a plasma processing chamber 10 (also called a processing container), a substrate support 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. Furthermore, the plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space, and at least one gas outlet for discharging gas from the plasma processing space. The gas supply port is connected to the gas supply unit 20 (described later), and the gas outlet is connected to the exhaust system 40 (described later). The substrate support 11 is disposed within the plasma processing space and has a substrate support surface for supporting a substrate.

[0052] The plasma generation unit 12 is configured to generate plasma from at least one processing gas supplied to the plasma processing space. The plasma generated in the plasma processing space can be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), ECR plasma (Electron-Cyclotron-resonance plasma), Helicon Wave Plasma (HWP), or surface wave plasma (SWP), etc. Additionally, various types of plasma generation units, including AC (Alternating Current) plasma generation units and DC (Direct Current) plasma generation units, can be used. In this embodiment, the AC signal (AC power) used in the AC plasma generation unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes both RF (Radio Frequency) and microwave signals. In this embodiment, the RF signal has a frequency in the range of 200 kHz to 150 MHz.

[0053] The control unit 2 processes computer-executable commands that cause the plasma processing apparatus 1 to perform the various processes described herein. The control unit 2 may be configured to control the various elements of the plasma processing apparatus 1 to perform the various processes described herein. In embodiments, the control unit 2 may be partially or entirely included in the plasma processing apparatus 1. The control unit 2 may, for example, include a computer 2a. The computer 2a may, for example, include a processing unit (CPU: Central Processing Unit) 2a1, a storage unit 2a2, and a communication interface 2a3. The processing unit 2a1 may be configured to perform various control actions based on a program stored in the storage unit 2a2. The storage unit 2a2 may also include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or combinations thereof. The communication interface 2a3 may also communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).

[0054] Next, refer to Figure 2A structural example of a capacitively coupled plasma processing apparatus, exemplified as plasma processing apparatus 1, will be described. The plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. Furthermore, the plasma processing apparatus 1 includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas inlet includes a spray head 13. The substrate support 11 is disposed within the plasma processing chamber 10. The spray head 13 is disposed above the substrate support 11. In this embodiment, the spray head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the spray head 13, the sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The sidewall 10a is grounded. The spray head 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0055] The substrate support portion 11 includes a main body portion 111 and an annular assembly 112. The main body portion 111 has a central region (substrate support surface) 111a for supporting a substrate (wafer) W and an annular region (annular support surface) 111b for supporting the annular assembly 112. Viewed from above, the annular region 111b of the main body portion 111 surrounds the central region 111a of the main body portion 111. The substrate W is disposed on the central region 111a of the main body portion 111, and the annular assembly 112 is disposed on the annular region 111b of the main body portion 111 in such a way that it surrounds the substrate W on the central region 111a of the main body portion 111. In an embodiment, the main body portion 111 includes a base 116 (also referred to as a lower electrode) and an electrostatic chuck 113. The base 116 includes conductive components. The conductive components of the base 116 function as the lower electrode. The electrostatic chuck 113 is disposed on the base 116. The upper surface of the electrostatic chuck 113 has a substrate support surface 111a. The annular assembly 112 includes one or more annular components. At least one of the one or more annular components is an edge ring. Additionally, although not shown in the figure, the substrate support 11 may also include a temperature control module configured to adjust at least one of the electrostatic chuck 113, the annular assembly 112, and the substrate to a target temperature. The temperature control module may also include a heater, a heat transfer medium, a flow path, or a combination thereof. A heat transfer fluid such as brine or gas can flow in the flow path. Furthermore, as described later, the substrate support 11 is configured to supply heat transfer gas between the back surface of the substrate W and the substrate support surface 111a.

[0056] The spray head 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The spray head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas inlets 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s through the plurality of gas inlets 13c. Additionally, the spray head 13 includes a conductive component. The conductive component of the spray head 13 functions as an upper electrode. Furthermore, in addition to the spray head 13, the gas inlet may also include one or more side gas injectors (SGIs) installed in one or more openings formed in the sidewall 10a.

[0057] The gas supply unit 20 may also include at least one gas source 21 and at least one flow controller 22. In an embodiment, the gas supply unit 20 is configured to supply at least one process gas from its respective gas source 21 to the spray head 13 via its respective flow controller 22. Each flow controller 22 may also include, for example, a mass flow controller or a pressure-controlled flow controller. In addition, the gas supply unit 20 may also include at least one flow modulation device for modulating or pulsed the flow rate of the at least one process gas.

[0058] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power), such as a generation source RF signal and a bias RF signal, to conductive components of the substrate support 11 and / or the spray head 13. As a result, plasma is formed from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation section 12. Furthermore, by supplying a bias RF signal to the conductive components of the substrate support 11, a bias potential can be generated on the substrate W, introducing ionic components from the formed plasma into the substrate W.

[0059] In one embodiment, the RF power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is configured to couple with a conductive component of the substrate support 11 and / or a conductive component of the spray head 13 via at least one impedance matching circuit to generate a generation source RF signal (generation source RF power) for plasma generation. In one embodiment, the generation source RF signal has a frequency in the range of 13MHz to 150MHz. In another embodiment, the first RF generation unit 31a may also be configured to generate multiple generation source RF signals with different frequencies. The generated one or more generation source RF signals are supplied to the conductive components of the substrate support 11 and / or the conductive components of the spray head 13. The second RF generation unit 31b is configured to couple with a conductive component of the substrate support 11 via at least one impedance matching circuit to generate a bias RF signal (bias RF power). In one embodiment, the bias RF signal has a frequency lower than the generation source RF signal. In another embodiment, the bias RF signal has a frequency in the range of 400kHz to 13.56MHz. In some embodiments, the second RF generation unit 31b may also be configured to generate multiple bias RF signals with different frequencies. One or more of the generated bias RF signals are supplied to the conductive components of the substrate support unit 11. Furthermore, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0060] Alternatively, the power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generating unit 32a and a second DC generating unit 32b. In one embodiment, the first DC generating unit 32a is connected to a conductive component of the substrate support 11 and is configured to generate a first DC signal. The generated first DC signal is applied to the conductive component of the substrate support 11. In another embodiment, the first DC signal may also be applied to an electrode such as the electrode 113a within the electrostatic chuck 113. In another embodiment, the second DC generating unit 32b is connected to a conductive component of the spray head 13 and is configured to generate a second DC signal. The generated second DC signal is applied to the conductive component of the spray head 13. In various embodiments, the first and second DC signals may also be pulsed. Furthermore, in addition to the RF power supply 31, the first and second DC generating units 32a and 32b may also be provided, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0061] The exhaust system 40 may be connected to a gas outlet 10e, for example, located at the bottom of the plasma processing chamber 10. The exhaust system 40 may also include a pressure regulating valve and a vacuum pump. The pressure within the plasma processing space 10s is regulated using the pressure regulating valve. The vacuum pump may also include a turbomolecular pump, a dry pump, or a combination thereof.

[0062] [Gas Flow Path]

[0063] An electrode 113a is provided on the electrostatic chuck 113. The electrode 113a is connected to the first DC generation unit 32a, and a first DC signal (DC voltage) is applied from the first DC generation unit 32a. As a result, the substrate W is attracted and held on the electrostatic chuck 113.

[0064] The substrate support portion 11 is an example of a component having electrodes capable of being applied with desired high-frequency electrical power. However, the substrate support portion 11 may also lack the electrostatic chuck 113 and the electrode 113a. As electrodes in the substrate support portion 11, conductive components of the base 116 that couple at least one RF signal (RF electrical power) from the first RF generation portion 31a and / or the second RF generation portion 31b may also be used as electrodes (lower electrodes).

[0065] In this invention, helium (He) gas, as an example of a heat transfer gas, is supplied between the substrate support surface 111a of the electrostatic chuck 113 and the back surface of the substrate W. However, the heat transfer gas is not limited to helium gas and may also be other inactive gases. The electrostatic chuck 113 has a plurality of through holes 113c extending in the thickness direction. However, the number of through holes 113c is not limited to this, and more than one through hole 113c may be formed in the electrostatic chuck 113. The base 116 has a plurality of through holes 111c extending in the thickness direction. However, the number of through holes 111c is not limited to this, and more than one through hole 111c may be provided in the base 116. A through hole 111c is provided below the through holes 113c, and the through hole 111c communicates with the through holes 113c to form a flow path for the helium gas.

[0066] The main body 111 includes a conductive plate 110 supporting the base 116 below the base 116. A gap exists between the lower surface of the base 116 and the upper surface of the plate 110, forming a gas flow path P. A through hole 111c communicates with the gas flow path P. The gas flow path P is connected to the heat transfer gas supply unit 119 via a heat transfer gas supply line 119a. Helium gas supplied from the heat transfer gas supply unit 119 flows through the heat transfer gas supply line 119a in the gas flow path P, and is supplied to the space between the substrate support surface 111a and the back surface of the substrate W through the gas flow path of the through hole 111c and the through hole 113c.

[0067] An embedded component 114 is disposed in the through hole 111c of the base 116. Before describing the embedded component 114 of the present invention, refer to... Figure 3 (a) describes the existing embedded component 214.

[0068] Figure 3 The existing embedded component 214 shown in (a) is disposed within a ceramic sleeve 115 covering the inner wall of the through hole 111c of the base 116. A spiral groove 214a is provided on the outer periphery of the embedded component 214. The groove 214a communicates with the through hole 113c at the upper end of the embedded component 214 and with the gas flow path P at the lower end of the embedded component 214. Helium gas flows from the gas flow path P into the groove 214a of the embedded component 214 and is supplied through the through hole 113c between the substrate W and the substrate support surface 111a of the electrostatic chuck 113.

[0069] In recent years, higher RF power has been applied to the substrate support portion 11. In particular, higher RF power is applied during the etching process in which a recess with a large aspect ratio is formed on the substrate W. In addition, for the substrate support portion 11 with an electrostatic chuck 113, a DC voltage is applied to the electrode 113a during substrate processing.

[0070] A potential difference is generated between the substrate 116 and the substrate W by using RF power or DC voltage applied to the substrate support 11. Helium gas flows inside the through holes 111c and 113c and is supplied to the back side of the substrate W through the substrate 116 and the periphery of the electrode 113a.

[0071] An insulating sleeve 115, such as a ceramic sleeve, is placed in the through hole 111c, which serves as a flow path for helium gas, to suppress the charging of the base 116 and the substrate W, thus preventing discharge. However, when the RF power applied to the base 116 increases, the potential difference between the base 116 and the substrate W becomes significant, making it easier for discharge to occur.

[0072] According to Paschen's Law, the longer the gas flow path, the less likely it is to discharge. For example... Figure 4 As shown, according to Paschen's law, the voltage at which a discharge occurs between parallel electrodes is determined by the product of the distance between the electrodes and the gas pressure between them. For example, when the product of the distance between the electrodes and the gas pressure between them is B, the discharge initiation voltage is the lowest, and discharge is easy to achieve. Conversely, if the distance between the electrodes can be increased, i.e., the gas flow path can be lengthened, the discharge initiation voltage can be increased. That is, by lengthening the gas flow path, even if the potential difference between the base 116 and the substrate W becomes significant, the occurrence of discharge can be suppressed.

[0073] As an example of a method to extend the gas flow path, the following method is performed: Figure 3As shown in (a), an embedded component 214 is disposed in the through-hole 111c, and a spiral groove 214a is formed on its outer periphery, with the groove 214a serving as a gas flow path. However, sometimes the discharge suppression effect of this method is insufficient. As a result, when helium gas flows in the groove 214a while a voltage is applied to the substrate support 11, discharge sometimes occurs in and around the through-hole 113c, becoming an abnormal discharge. This abnormal discharge causes electrical damage to the circuits formed on the substrate W or generates abnormal heat, thus reducing the yield.

[0074] As a countermeasure to extend the gas flow path without changing the size (diameter or length) of the embedded component 214, reducing the pitch of the groove 214a of the embedded component 214 is considered. However, this method has limitations in extending the length of the gas flow path. On the other hand, when changing the size of the embedded component 214 to extend the gas flow path, structural design changes such as changing the size of the through hole 111c are required. In contrast, the embedded component 114 of the present invention can extend the gas flow path without changing the original structure of the substrate support portion 11.

[0075] Therefore, by extending the gas flow path, the collision frequency of electrons in the plasma entering the through holes 113c and 111c can be increased, thereby reducing the energy of the electrons. According to Paschen's law, this increases the discharge initiation voltage. In other words, by extending the gas flow path, even if a high voltage is applied to the base 116, the occurrence of discharge can be suppressed, and abnormal discharge can be prevented.

[0076] [Embedded Components]

[0077] Next, regarding Figure 3 The embedded component 114 of the embodiment shown in (b) will be described with reference to Figure 5 and Figure 6 The embodiments thereof are described below. Figure 5 This refers to Embodiment 1, which shows the embedded component 114. Figure 6 Example 2 shows the embedded component 114.

[0078] Figure 3 In the embodiment shown in (b), the embedded component 114 is disposed within a ceramic sleeve 115 covering the inner wall of the through hole 111c of the base 116. The embedded component 114 is disposed within the sleeve 115 of the through hole 111c without any gap between the sleeve 115 and the embedded component 114. The embedded component 114 is composed of a first component 14 and a second component 15, which are joined (coupled). An outer flow path 14c is formed on the outer periphery of the first component 14 at a desired pitch. For example, inner flow paths 15c and 15d are formed on the second component 15 (refer to inner flow path 15c). Figure 5(b) The gas flow path formed by the outer flow path 14c and the inner flow paths 15c and 15d communicates with the through hole 113c at the upper end of the embedded component 114, and communicates with the gas flow path P between the lower surface of the base 116 and the upper surface of the plate 110 at the lower end of the embedded component 114. Helium flows from the gas flow path P to the gas flow path (outer flow path 14c, inner flow path 15c and 15d) of the embedded component 114, and is supplied through the through hole 113c to the space between the substrate W and the substrate support surface 111a of the electrostatic chuck 113.

[0079] (Example 1)

[0080] Reference Figure 5 Sections (a) to (d) describe the structure of the embedded component 114 of Embodiment 1. The embedded component 114 of Embodiment 1 has a generally cylindrical shape and is composed of a first component 14 and a second component 15. In the first component 14, one or more outer flow paths 14c are formed on the outer periphery. Figure 5 In example (a), 15 outer flow paths 14c are formed on the outer periphery. In the second component 15, two inner flow paths 15c and 15d are formed and connected to the outer flow paths 14c through engagement with the first component 14. Figure 5 In (a), an inner flow path 15d connected to the outer flow path 14c is shown. Thus, the outer flow path 14c is connected to the inner flow paths 15c and 15d.

[0081] Figure 5 (a) represents the finished product of the embedded part 114 obtained by joining the first part 14 and the second part 15. Figure 5 (b) indicates the second component 15 before the first component 14 and the second component 15 are joined.

[0082] like Figure 5 As shown in (b), the inner flow paths 15c and 15d of the second component 15 are composed of two interconnected flow paths, and the two flow paths have the same flow path length. However, the inner flow paths of the second component 15 are not limited to this, as long as there is more than one flow path.

[0083] The first component 14 and the second component 15 have the same height. Furthermore, when viewed from above, the first component 14 and the second component 15 have sides of the same radius relative to the central axis of the embedded component 114. Therefore, when joined in such a manner that one side 15a of the second component 15 merges with one side 14a of the first component 14, and the other side 15b of the second component 15 merges with the other side 14b of the first component 14, the embedded component 114 becomes approximately cylindrical in shape.

[0084] In the first component 14, an outer flow path 14c is formed on its outer peripheral surface. One end of the outer flow path 14c communicates with an inner flow path 15d formed on one side surface 15a of the second component 15. The inner flow path 15d is formed by a groove in the side surface 15a of the second component 15 and the side surface 14a of the first component 14. Similarly, the other end of the outer flow path 14c communicates with an inner flow path 15c formed on another side surface 15b of the second component 15. The inner flow path 15c is formed by a groove in the side surface 15b of the second component 15 and the side surface 14b of the first component 14.

[0085] The joining of the first component 14 and the second component 15 can be achieved by heat fusion, ultrasonic welding, or the like. The first component 14 and the second component 15 can also be bonded with an adhesive. However, the joining of the first component 14 and the second component 15 may not be adhesive. Alternatively, the first component 14 and the second component 15 may be disposed in a joined (bonded) state within the through-hole 111c without being bonded. Embedding the second component 15 at the same height as the first component 14 within the first component 14 provides better assemblability compared to, for example, stacking multiple gas flow path components vertically. Therefore, the first component 14 and the second component 15 may not be bonded. Furthermore, since the first component 14 and the second component 15 are exposed to plasma and free radicals via the through-hole 113c, they are formed from plasma-resistant components such as polytetrafluoroethylene (PTFE).

[0086] Figure 3 The embedded component 214 shown in (a) has the same dimensions (shape) as the embedded component 114 of the present invention. However, the gas flow path of the embedded component 114 of the present invention is different. Figure 3 In (a), the gas flow path of the embedded component 214, represented by groove 214a, is long. Therefore, according to Paschen's law, the discharge initiation voltage can be increased. That is, by extending the gas flow path, even when a high voltage is applied to the substrate support 11, the occurrence of discharge can be suppressed. Thus, abnormal discharge can be prevented.

[0087] [Length of gas flow path]

[0088] Based on the following calculations, it is proven that the gas flow path of embedded component 114 is longer than that of embedded component 214. The embedded component 114 used in the calculations is... Figure 5 As shown in (c). In Figure 5 In (c), the second component 15 is not visible. The dimensions of the embedded component 214 are... Figure 5 The embedded part 114 shown in (c) has the same dimensions. Figure 5 (d) indicates Figure 5 The upper surface A of the second component 15 of (b). For example... Figure 5 As shown in (d), when viewed from above the upper surface A, the second component 15 has a fan shape with an angle θ of 90° from the central axis of the embedded component 114.

[0089] In this case, the two flow paths 15c and 15d of the inner side are perpendicular to each other. The second component 15 has inner flow paths 15c and 15d whose combined lengths are F11 and F12. The length F2 of the outer periphery of the second component 15 is 1 / 4 of the length of the groove 214a formed in a circle of the embedded component 214. When the combined length of F11 and F12 is longer than the length of F2 (= 1 / 4 of the length of a circle of the spiral gas flow path), it can be said that the gas flow path of the embedded component 114 of the present invention is longer than the gas flow path of the conventional embedded component 214.

[0090] That is, in the embedded component 114 of the present invention, a gas flow path is also formed inside the embedded component 114 by joining the two components. As a result, compared with the case where a gas flow path is formed only on the outer periphery, the length of the gas flow path can be extended without changing the size (shape) of the embedded component 114 and the pitch of the gas flow path.

[0091] When the lengths (radii) of F11 and F12 of the embedded component 114 are set as r, and the angle centered on the central axis of the embedded component 114 is set as θ, the lengths of the inner flow paths 15c and 15d of the second component 15 are 2r. On the other hand, if the second component 15 forms an outer flow path, the length of the outer flow path 14c is rθ. Therefore, in order for the gas flow path length of the embedded component 114 to be longer than the gas flow path length of the embedded component 214, 2r > rθ must hold. That is, θ < 2 [rad].

[0092] (Example 2)

[0093] In the embedded component 114 of Embodiment 1, the first component 14 and the second component 15 are sequentially arranged and joined together. Conversely, as... Figure 6 As shown, in the embedded component 114 of Embodiment 2, the first component 14 and the second component 15 are arranged in pairs, and the first component 14 and the second component 15 are alternately joined in an adjacent manner. Figure 6 As shown in (a) and (b), two first components 14 are represented by first components 14A and 14B, and two second components 15 are represented by second components 15A and 15B. Figure 6 The first component 14A in front of the embedded component 114 of (a) is in Figure 6 (b) appears on the inside of the embedded part 114. Figure 6 (b) The first component 14B in front of the embedded component 114 is Figure 6 (a) appears on the inside of the embedded part 114.

[0094] The first components 14A and 14B, and the second components 15A and 15B, are arranged in an alternating adjacent manner with the first component 14 and the second component 15. Each of the second components 15A and 15B has two flow paths, and all four flow paths are interconnected. Figure 6 In (a), flow path 15Ad, one of the two flow paths formed in the second component 15A, and flow path 15Bc, one of the two flow paths formed in the second component 15B, are shown. Figure 6 In (b), another flow path 15Ac is formed in one of the two flow paths of the second component 15A and another flow path 15Bd is formed in one of the two flow paths of the second component 15B.

[0095] The central angles of the first components 14A and 14B and the second components 15A and 15B can all be 90°, or the angles of the second components 15A and 15B can be less than 90°, while the angles of the first components 14A and 14B can be greater than 90°. The angles of the second components 15A and 15B can be the same or different. The angles of the first components 14A and 14B can also be the same or different. In Embodiment 2, the two flow paths 15Ac and 15Ad of the inner side of the second component 15A are interconnected, and the two flow paths 15Bc and 15Bd of the inner side of the second component 15B are interconnected. The four flow paths are arranged with an angle of less than 90° between them. When the central angles of the second components 15A and 15B are both 90°, the four flow paths are arranged with an angle of 90° between them.

[0096] By changing the number of segments in the embedded component 114 or the angle θ during segmentation, the gas flow path can be extended without increasing the size of the embedded component 114. This prevents abnormal discharge from occurring.

[0097] (Another embodiment)

[0098] Reference Figure 7 Another embodiment of the embedded component 114 of the implementation method will be described. Figure 7 (a) indicates the upper surface of the embedded component 114 of the described embodiment 1. The corner of the joint portion of the first component 14 and the second component 15 is located at the center O of the circle on the upper surface of the embedded component 114.

[0099] Figure 7 (b) and Figure 7 (c) represents another embodiment of the embedded component 114. Figure 7 In example (b), the corner of the joint between the first component 14 and the second component 15 is located at a position O', offset from the center O of the circle. Thus, the first component 14 and the second component 15 can also be separated from the center O of the circle embedded in the upper surface of the component 114. Figure 7 In (b), position O' is deviated from the center O of the circle towards the side of the first component 14, but it is not limited to this. Position O' can also be deviated from the center O of the circle towards the side of the second component 15.

[0100] When the first component 14 and the second component 15 are combined, the shape of the embedded component 114 is not limited to a roughly cylindrical shape, but can also be a roughly rectangular shape or other shapes. Figure 7 In example (c), the embedded component 114 is a cuboid with a square upper surface, and the corner of the joint between the first component 14 and the second component 15 is located at the center O of the square. However, it is not limited to this; the upper surface of the embedded component 114 can also be rectangular or polygonal. In this case, the corner of the joint between the first component 14 and the second component 15 can be located at the center O or at a position offset from the center O.

[0101] (other)

[0102] In embodiments 1 and 2, the description was based on the premise that the heights (lengths in the long side direction) of the first component 14 and the second component 15 are the same, but it is not limited to this. For example, the length of the second component 15 may be shorter than the length of the first component 14. In this case, the second component 15 engages with a recess formed in part of the long side direction of the first component, which is the length of the first component 14.

[0103] Furthermore, the example described uses a first component 14 having an outer flow path 14c and a second component 15 having inner flow paths 15c and 15d. However, the first component 14 may also have not only an outer flow path 14c, but also inner flow paths at positions opposite to the inner flow paths 15c and 15d of the second component 15. In this case, the inner flow paths are formed by assembling the second component 15 with its inner flow paths 15c and 15d aligned with the corresponding inner flow paths of the first component 14. Alternatively, in this case, the inner flow paths 15c and 15d of the second component 15 may not be present.

[0104] In addition, the second component 15 may not only have inner flow paths 15c and 15d, but also have an outer flow path at a position where it is connected to the outer flow path 14c of the first component 14.

[0105] Furthermore, the example given is of embedding the component 114 in the substrate support portion 11, but it is not limited to this. For example, the embedding component 114 may also be provided in the gas flow path of the spray head 13. The spray head 13 also functions as an upper electrode, thus the spray head 13 is an example of a component having an electrode capable of being applied with desired high-frequency electrical power. As an electrode provided in the spray head 13, a conductive component of the spray head 13 that couples the RF signal (RF electrical power) from the first RF generation portion 31a may also be used as an electrode (upper electrode). By providing the embedding component 114 in the gas flow path of the spray head 13, the gas flow path can be extended. Therefore, when a voltage is applied to the spray head 13, abnormal discharge can be prevented.

[0106] As explained above, the plasma processing apparatus and substrate support according to this embodiment can extend the gas flow path length without changing the size of the embedded component 114.

[0107] It should be considered that the plasma processing apparatus 1 and substrate support 11 of the disclosed embodiments are exemplary and not limiting in all respects. The embodiments can be modified and improved in various forms without departing from the scope and spirit of the appended claims. The contents described in the above embodiments can be adopted in other structures without contradiction, and can also be combined without contradiction.

[0108] The plasma processing apparatus of the present invention can also be used in any type of apparatus, including Atomic Layer Deposition (ALD), Capacitively Coupled Plasma (CCP), Inductively Coupled Plasma (ICP), Radial Line Slot Antenna (RLSA), Electron Cyclotron Resonance Plasma (ECR), and Helicon Wave Plasma (HWP).

Claims

1. A plasma processing device, characterized in that, include: Handling containers; Electrodes, which are disposed inside the processing container, can be subjected to desired high-frequency electrical power; A component having the electrodes; and Embedded components configured in the component The embedded component consists of a first component and a second component. The first component has multiple outer flow paths formed on its outer periphery. The second component, by engaging with the first component, forms multiple inner flow paths connected to the outer flow path, and is separate from the first component. The outer flow path is connected to the inner flow path.

2. The plasma processing apparatus according to claim 1, characterized in that: The flow path length of the inner flow path of the second component is longer than the flow path length when a flow path connected to the outer flow path of the first component is formed on the outer periphery of the second component instead of forming the inner flow path in the second component.

3. The plasma processing apparatus according to claim 2, characterized in that: The flow path length of the inner flow path of the second component is 4 / π times the flow path length of the outer flow path when the second component forms the outer flow path.

4. The plasma processing apparatus according to any one of claims 1 to 3, characterized in that: The inner flow path consists of two or more interconnected flow paths. The two or more flow paths have the same flow path length.

5. The plasma processing apparatus according to claim 4, characterized in that: The flow paths with two or more flow paths are configured at right angles to each other.

6. A substrate support portion, characterized in that, include: Electrodes that can be subjected to desired high-frequency electrical power; A component having the electrodes; and An embedded component is disposed in a through hole provided in the component. The embedded component consists of a first component and a second component. The first component has multiple outer flow paths formed on its outer periphery. The second component, by engaging with the first component, forms multiple inner flow paths connected to the outer flow path, and is separate from the first component. The outer flow path is connected to the inner flow path.

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