栅极硬掩膜的去除方法
By using the etch stop layer and interlayer dielectric layer as masks, the sidewall control problem and narrow process window problem in gate hard mask removal are solved, achieving cost savings and performance improvement.
CN114975125BActive Publication Date: 2026-07-17SHANGHAI HUALI INTEGRATED CIRCUIT CORP
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHANGHAI HUALI INTEGRATED CIRCUIT CORP
- Filing Date
- 2022-06-02
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
Existing methods for removing gate hard masks suffer from several drawbacks, including the presence of sidewall horns that are difficult to control, a high risk of detachment, a narrow process window, and the potential for oxide residue or metal gate height issues due to photoresist re-etching, all of which negatively impact device performance.
Method used
Using an etch stop layer and an interlayer dielectric layer as a mask, sidewalls and stacked layers are removed by wet and dry etching, avoiding the photoresist layer and expanding the process window.
Benefits of technology
It reduces the number of photolithography layers, saves costs, improves process defects, expands the process window, and enhances device performance stability.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN114975125B_ABST
Abstract
本发明提供一种栅极硬掩膜的去除方法，提供衬底，衬底上形成有叠层，叠层由自下而上堆叠的伪栅、第一硬掩膜层、第二硬掩膜层形成，叠层的侧壁形成有侧墙；刻蚀去除侧墙，在衬底表面形成覆盖叠层的刻蚀停止层与覆盖刻蚀停止层的层间介质层，之后研磨层间介质层至刻蚀停止层的上表面；刻蚀层间介质层，使得叠层顶端的刻蚀停止层裸露；刻蚀刻蚀停止层、层间介质层和叠层，使得伪栅的顶端裸露。本发明的方法去除硬掩膜层，少了一层光刻层，节约了成本；本发明涉及的工艺及设备均为现有，且工艺成熟；本发明的方法可以改善工艺缺陷，扩大工艺窗口。
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