Semiconductor manufacturing apparatus and method for manufacturing semiconductor apparatus
By introducing a recycling system into semiconductor manufacturing equipment, exhaust gases are converted into D2O and reused, solving the problem of unnecessarily wasting exhaust gases and achieving efficient resource recovery and reduced operating costs.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- KIOXIA CORP
- Filing Date
- 2021-07-14
- Publication Date
- 2026-07-17
AI Technical Summary
In the semiconductor manufacturing process, unused reactor exhaust gases are wasted, leading to resource waste and increased operating costs.
Design a semiconductor manufacturing apparatus that includes a recycling system that converts D2 gas in exhaust gas into D2O gas and recycles it for reuse through a purifier, a D2O generator, a D2O condenser, a D2O tank, and a D2O vaporizer, thereby reducing the waste of D2 gas.
It effectively suppresses the unnecessary waste of exhaust gas, reduces the operating cost of semiconductor manufacturing equipment, reduces the amount of D2 gas used, and reduces the frequency of D2O tank replacement.
Smart Images
Figure CN114975164B_ABST
Abstract
Description
[0001] [Cross-reference to related applications]
[0002] This application claims priority to Japanese Patent Application No. 2021-029111 (filed on February 25, 2021). This application includes all contents of the basic application by reference to that basic application. Technical Field
[0003] The embodiments of the present invention relate to a semiconductor manufacturing apparatus and a method for manufacturing a semiconductor apparatus. Background Technology
[0004] When a substrate is treated with gas within a reactor, sometimes exhaust gas containing unconsumed gases from the reactor is discharged. If such exhaust gas is discarded, then the unconsumed gases from the reactor are needlessly wasted. Summary of the Invention
[0005] The problem to be solved by the present invention is to provide a semiconductor manufacturing apparatus and a method for manufacturing a semiconductor apparatus that can suppress the unintended waste of exhaust gas from substrate processing units such as reactors.
[0006] One embodiment of a semiconductor manufacturing apparatus includes a substrate processing unit that processes a substrate using a gas of a first substance and a gas of a second substance, and discharges a first gas containing at least one of the first and second substances. The apparatus further includes a waste unit for discarding the first gas discharged from the substrate processing unit. The apparatus also includes a recovery unit that uses the first substance within the first gas discharged from the substrate processing unit to generate a second gas containing the second substance, and supplies the second gas back to the substrate processing unit. Attached Figure Description
[0007] Figure 1 This is a perspective view schematically showing the configuration of the semiconductor manufacturing apparatus according to the first embodiment.
[0008] Figure 2 This is a cross-sectional view schematically showing an example of the configuration of the D2O generator of the first embodiment.
[0009] Figure 3 This is a flowchart illustrating an example of the operation of the reactor in the first embodiment.
[0010] Figure 4 This is a cross-sectional view (1 / 2) showing an example of the substrate of the first embodiment.
[0011] Figure 5 This is a cross-sectional view (2 / 2) showing an example of the substrate of the first embodiment.
[0012] Figure 6 This is a perspective view schematically showing the configuration of the semiconductor manufacturing apparatus according to the second embodiment. Detailed Implementation
[0013] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. Figures 1 to 6 In Chinese, identical components are marked with the same symbol, and repeated explanations are omitted.
[0014] (First Embodiment)
[0015] Figure 1 This is a perspective view schematically showing the configuration of the semiconductor manufacturing apparatus according to the first embodiment.
[0016] Figure 1 The semiconductor manufacturing apparatus includes a reactor 11, a pump 12, a purifier (washer) 13, a D2O generator 14, a D2O condenser 15, a D2O tank 16, a D2O vaporizer 17, a level gauge 21, a valve 22, and a control unit 23 (D represents deuterium, O represents oxygen). The reactor 11 is an example of a substrate processing unit, and the D2O tank 16 is an example of a housing unit. Furthermore, the level gauge 21 is an example of a measuring unit, and the valve 22 is an example of a switching unit. Figure 1 The semiconductor manufacturing equipment also includes a D2 supply unit 1, a D2O supply unit 2, an O2 supply unit 3, and a D2 supply unit 4.
[0017] Figure 1 The semiconductor manufacturing apparatus also includes a waste system flow path P1 and a recycling system flow path P2. A purifier 13 is installed on flow path P1, constituting the waste system of the semiconductor manufacturing apparatus of this embodiment. A D2O generator 14, a D2O condenser 15, a D2O tank 16, and a D2O vaporizer 17 are installed on flow path P2, constituting the recycling system of the semiconductor manufacturing apparatus of this embodiment. Flow path P1 and purifier 13 are examples of the waste section. On the other hand, flow path P2, D2O generator 14, D2O condenser 15, D2O tank 16, and D2O vaporizer 17 are examples of the recycling section. Flow path P1 extends from valve 22. Flow path P2 extends from valve 22 towards reactor 11.
[0018] Reactor 11 contains a substrate (wafer) W to be processed, and processes the contained substrate W using gases. In this embodiment, reactor 11 uses D2 gas (deuterium gas) and D2O gas (heavy water gas) to process the substrate W. As a result, the substances within the substrate W undergo a chemical reaction with the D2 gas and D2O gas. The gases generated by this chemical reaction, as well as the D2 gas and D2O gas that did not react with the substances within the substrate W, are discharged from reactor 11 as exhaust gases. Figure 1The discharged gas is referred to as "gas G1". The reactor 11 in this embodiment is an annealing furnace that anneales the substrate W using D2 gas and D2O gas. D2 is an example of a first substance, and D2O is an example of a second substance. Gas G1 is also an example of the first gas.
[0019] Reactor 11 introduces D2 gas from D2 supply section 1 and D2O gas from D2O supply section 2, and uses these D2 and D2O gases to treat substrate W. Furthermore, the introduction of D2 gas other than D2 supply section 1 and D2O gas other than D2O supply section 2 will be described below.
[0020] Pump 12 delivers gas G1 discharged from reactor 11 to flow path P1 or flow path P2 via valve 22. Valve 22 is, for example, a three-way valve, which allows valve 22 to connect to either flow path P1 or P2. Therefore, valve 22 allows the destination of gas G1 to be switched between flow path P1 and flow path P2.
[0021] Purifier 13 purifies the gas G1 flowing in from valve 22. In this embodiment, purifier 13 purifies gas G1 by diluting it with other gases and then converting the D2 gas in gas G1 into D2O gas through combustion. This prevents the combustion of the discarded gas G1. The gas used for dilution is, for example, N2 gas (nitrogen) or H2O gas (water vapor). The purified gas G1 is discharged from purifier 13 as exhaust gas. In this way, gas G1 is discarded.
[0022] The D2O generator 14 reacts the D2 gas in the gas G1 flowing in from valve 22 with the O2 gas (oxygen) introduced from the O2 supply section 3. As a result, D2O gas is generated from the D2 gas and the O2 gas. The D2O generator 14 can generate D2O gas by burning the D2 gas with O2 gas, or it can generate D2O gas through a catalytic reaction between the D2 gas and the O2 gas.
[0023] The D2O condenser 15 condenses the D2O gas discharged from the D2O generator 14, that is, it turns D2O from gas into liquid. As a result, D2O liquid with high purity can be generated.
[0024] D2O tank 16 contains D2O liquid discharged from D2O condenser 15. In this way, gas G1 is recovered into D2O tank 16 in the form of D2O liquid for recycling. As described below, the D2O liquid in D2O tank 16 is reused as D2O gas in reactor 11. Alternatively, the D2O liquid in D2O tank 16 may be recycled as a raw material for generating D2 gas, instead of being recycled in this form. The D2O tank 16 of this embodiment is equipped with a level gauge 21 for measuring the level of D2O liquid within D2O tank 16. Therefore, the amount of D2O liquid within D2O tank 16 can be measured by the level.
[0025] In addition, D2O tank 16 can also recover D2O by mixing D2O gas discharged from D2O generator 14 into the D2O liquid in D2O tank 16 instead of containing D2O liquid discharged from D2O condenser 15.
[0026] The D2O vaporizer 17 vaporizes the liquid D2O discharged from the D2O tank 16, that is, it transforms the D2O from a liquid into a gas. This generates D2O gas of relatively high purity. The D2 gas introduced into the D2O tank 16 from the D2 supply unit 4 also flows into the D2O vaporizer 17. The D2O vaporizer 17 of this embodiment discharges "gas G2," which contains both D2O gas and D2 gas. The D2 gas is used as a carrier for transporting the D2O gas. Gas G2 is supplied to the reactor 11 via flow path P2 and is used as both D2O gas and D2 gas within the reactor 11. Gas G2 is an example of a second gas.
[0027] Control Unit 23 Figure 1 The control unit 23 of this embodiment controls various operations of the semiconductor manufacturing apparatus. It receives measurement data of the liquid level in the D2O tank 16 from the level gauge 21 and controls the valve 22 based on the received measurement data. For example, if the liquid level in the D2O tank 16 is higher than a threshold, since a sufficient amount of D2O liquid is contained in the D2O tank 16, the valve 22 can be connected to the flow path P1 to discard gas G1. On the other hand, if the liquid level in the D2O tank 16 is lower than the threshold, since there is insufficient D2O liquid in the D2O tank 16, the valve 22 can be connected to the flow path P2 to recover gas G1. Further details regarding the control unit 23 will be described below.
[0028] As described above, the semiconductor manufacturing apparatus of this embodiment can recover and recycle the gas G1 discharged from reactor 11. Therefore, according to this embodiment, the unnecessary waste of D2 gas in gas G1 can be prevented. This reduces the amount of D2 gas used, thereby lowering the operating cost of the semiconductor manufacturing apparatus. Generally, D2 gas is expensive, so according to this embodiment, the operating cost of the semiconductor manufacturing apparatus can be significantly reduced.
[0029] Furthermore, the semiconductor manufacturing apparatus of this embodiment includes a D2O vaporizer 17 downstream of the D2O tank 16, which automatically supplies the D2O liquid accumulated in the D2O tank 16 to the reactor 11. If the D2O vaporizer 17 were not present downstream of the D2O tank 16, the D2O liquid in the D2O tank 16 would frequently overflow, requiring the tank to be replaced each time it overflows. According to this embodiment, by using the D2O liquid accumulated in the D2O tank 16 via the D2O vaporizer 17, the D2O liquid in the D2O tank 16 is less likely to overflow, thus reducing the frequency of tank replacement.
[0030] The reactor 11 in this embodiment is an annealing furnace that uses D2 gas and D2O gas to anneal the substrate W. During the annealing of the substrate W, these gases are often hardly consumed, which could lead to significant waste. Furthermore, the annealing of the substrate W usually takes a long time, further increasing the amount of gas used. According to this embodiment, the operating cost of such an annealing furnace can be significantly reduced. Generally, the mechanism for discharging exhaust gases from an annealing furnace is relatively simple, so when the reactor 11 is an annealing furnace, it is often easy to install a recovery system at the downstream end of the reactor 11. Moreover, the recovery system of this embodiment can be applied to reactors other than annealing furnaces, or to equipment other than reactors used to process the substrate W.
[0031] The reactor 11 of this embodiment can also use gases other than D2 gas and D2O gas to treat the substrate W. For example, the reactor 11 of this embodiment can also use H2 gas (hydrogen) and H2O gas to treat the substrate W. In this case, the purifier 13 combusts the H2, and the D2O generator 14, D2O condenser 15, D2O tank 16, and D2O vaporizer 17 treat the H2 and H2O.
[0032] The semiconductor manufacturing apparatus of this embodiment may also omit both D2 supply units 1 and 4, and instead only include one of them. For example, if the D2 gas required for reactor 11 can be adequately supplied using only D2 supply unit 4, then D2 supply unit 1 may not be provided. Similarly, if the D2O gas required for reactor 11 can be adequately supplied using only D2O tank 16, then D2O supply unit 2 may not be provided.
[0033] Furthermore, the semiconductor manufacturing apparatus of this embodiment can be sold by the manufacturer to the purchaser in a form that includes all of the following components: D2O generator 14, D2O condenser 15, D2O tank 16, and D2O vaporizer 17. It can also be sold by the manufacturer to the purchaser in a form that does not include at least one of the following components: D2O generator 14, D2O condenser 15, D2O tank 16, and D2O vaporizer 17. For example, the D2O tank 16 can be sold by the manufacturer to the purchaser as an option of the semiconductor manufacturing apparatus, or it can be prepared by the purchaser themselves. The same applies to the D2O generator 14, D2O condenser 15, and D2O vaporizer 17.
[0034] Figure 2 This is a cross-sectional view schematically showing an example of the configuration of the D2O generator 14 of the first embodiment.
[0035] Figure 2 The D2O generator 14 shown includes a reactor 14a and a Pt (platinum) catalyst 14b within the reactor 14a. Inside the reactor 14a, D2 gas flowing in from gas G1 via valve 22 reacts with O2 gas introduced from the O2 supply unit 3 in the manner indicated by arrows A1, A2, and A3. Arrows A1 to A3 represent the flow of the catalytic reaction between D2 gas and O2 gas under the action of the Pt catalyst 14b. The reactor 14a discharges the D2O gas generated by this catalytic reaction to a D2O condenser 15.
[0036] Figure 3 This is a flowchart illustrating an example of the operation of the reactor 11 in the first embodiment.
[0037] First, after the substrate W is placed into reactor 11, it is flushed with H2 (step S1). Next, the gas supplied to reactor 11 is switched from H2 to D2 (step S2). Then, the temperature inside reactor 11 is increased (step S3), and O2 and D2O gases are supplied to reactor 11 (step S4). As a result, substrate W is annealed, and the material inside substrate W is oxidized by D2 and D2O gases (step S5). Next, the supply of O2 and D2O gases to reactor 11 is stopped (step S6), and the temperature inside reactor 11 is decreased (step S7). Then, the gas supplied to reactor 11 is switched from D2 to H2 (step S8). Finally, after flushing with H2 inside reactor 11, substrate W is removed from reactor 11 (step S9).
[0038] Figure 3 In steps S1, S2, S8, and S9, the gas G1 discharged from reactor 11 is discarded, and in steps S3 to S7, the gas G1 discharged from reactor 11 is recovered. Specifically, during steps S1, S2, S8, and S9, valve 22 is connected to flow path P1, and during steps S3 to S7, valve 22 is connected to flow path P2. At this time, the opening and closing of valve 22 is controlled by control unit 23.
[0039] In steps S3 to S7, gas G1 may contain either D2 gas but no D2O gas, or both D2 gas and D2O gas. In the latter case, the D2 gas in gas G1 is converted into D2O gas in the D2O generator 14, and the D2O gas in gas G1 passes through the D2O generator 14. All of this D2O gas is condensed in the D2O condenser 15.
[0040] In steps S3 to S7, the control unit 23 can either keep valve 22 continuously connected to flow path P2, or switch the connection destination of valve 22 between flow paths P1 and P2. For example, if the liquid level in D2O tank 16 is higher than a threshold, since D2O tank 16 contains a sufficient amount of D2O liquid, valve 22 can be connected to flow path P1 to discard gas G1. On the other hand, if the liquid level in D2O tank 16 is lower than a threshold, since there is insufficient D2O liquid in D2O tank 16, valve 22 can be connected to flow path P2 to recover gas G1.
[0041] Figure 4 and Figure 5 This is a cross-sectional view showing an example of the substrate W in the first embodiment.
[0042] Figure 4 This illustrates the use of D2 gas and D2O gas to treat the substrate W inside reactor 11. Figure 4The substrate W shown is used, for example, to fabricate a three-dimensional memory as a semiconductor device. Figure 4 This indicates the mutually perpendicular X, Y, and Z directions. In this specification, the +Z direction is considered the up direction, and the -Z direction is considered the down direction.
[0043] Figure 4 The substrate W shown includes a semiconductor substrate 31, an insulating film 32, a source layer 33, an insulating film 34, a gate layer 35, an insulating film 36, a multilayer film 37, and pillar-shaped portions 38. The semiconductor substrate 31 is, for example, a Si (silicon) substrate. The insulating film 32, source layer 33, insulating film 34, gate layer 35, insulating film 36, and multilayer film 37 are sequentially disposed on the semiconductor substrate 31. The pillar-shaped portions 38 are disposed within the source layer 33, insulating film 34, gate layer 35, insulating film 36, and multilayer film 37.
[0044] The source layer 33 includes a metal layer 41, a lower semiconductor layer 42, an intermediate semiconductor layer 43, and an upper semiconductor layer 44 sequentially disposed on the insulating film 32. The stacked film 37 includes a plurality of sacrificial layers 45 and a plurality of insulating layers 46 alternately disposed on the insulating film 36. The pillar-shaped portion 38 includes a barrier insulating film 51, a charge storage layer 52, a tunnel insulating film 53, a channel semiconductor layer 54, and a core insulating film 55 sequentially disposed within the source layer 33, the insulating film 34, the gate layer 35, the insulating film 36, and the stacked film 37. The channel semiconductor layer 54 is as follows: Figure 4 It is shown to be connected to the intermediate semiconductor layer 43.
[0045] Figure 4 The substrate W shown also has slits ST within the source layer 33, insulating film 34, gate layer 35, insulating film 36, and stacked film 37. D2 gas enters the pillar portion 38 through the slits ST and the stacked film 37. As a result, D atoms are introduced into the pillar portion 38. On the other hand, D2O gas oxidizes the surfaces of the intermediate semiconductor layer 43, the upper semiconductor layer 44, the gate layer 35, etc. As a result, oxide films are formed on the surfaces of these layers. Alternatively, D2O gas may oxidize the surfaces of these layers and enter the pillar portion 38 in the same way as D2 gas, or it may not oxidize the surfaces of these layers but instead enter the pillar portion 38 in the same way as D2 gas.
[0046] Figure 5 This shows the substrate W after treatment with D2 gas and D2O gas. Figure 5 This illustrates oxide films 43a, 44a, and 35a formed by oxidation within the intermediate semiconductor layer 43, the upper semiconductor layer 44, and the gate layer 35. In this embodiment, the substrate W is then removed from the reactor 11, the sacrificial layer 45 is replaced with a barrier insulating film 47 and an electrode layer 48, and the slit ST is embedded using the insulating film 39. Figure 5In this way, a semiconductor device is manufactured from the substrate W.
[0047] As described above, the semiconductor manufacturing apparatus of this embodiment includes a recycling system that recovers the gas G1 discharged from reactor 11 for recirculation. Therefore, according to this embodiment, the unnecessary waste of gas G1 discharged from reactor 11 can be prevented.
[0048] (Second Implementation)
[0049] Figure 6 This is a perspective view schematically showing the configuration of the semiconductor manufacturing apparatus according to the second embodiment.
[0050] Figure 6 Semiconductor manufacturing equipment has the ability to... Figure 1 The D2O condenser 15, D2O tank 16, D2O vaporizer 17, level gauge 21, and D2 supply unit 4 of the semiconductor manufacturing apparatus are replaced with a gas storage tank 18, a pressure gauge 24, and a D2 supply unit 5. The gas storage tank 18 is an example of a housing section, and the pressure gauge 24 is an example of a measuring section. Furthermore, the flow path P2, the gas storage tank 18, and the D2O generator 14 are examples of a recovery section.
[0051] The gas storage tank 18 contains gas G1 flowing in from valve 22. In this way, gas G1 is recovered into the gas storage tank 18 for recirculation. As described below, gas G1 in the gas storage tank 18 is reused as D2O gas in reactor 11. Alternatively, gas G1 in the gas storage tank 18 may be recycled as a raw material for generating D2 gas, instead of being recirculated in this manner. Furthermore, when the gas in the gas storage tank 18 is insufficient, D2 gas can be introduced from the D2 supply unit 5. The gas storage tank 18 of this embodiment is equipped with a pressure gauge 24 for measuring the pressure of the gas in the gas storage tank 18. Therefore, the amount of gas in the gas storage tank 18 can be measured by pressure.
[0052] The D2O generator 14 of this embodiment reacts D2 gas in the gas discharged from the gas storage tank 18 with O2 gas introduced from the O2 supply unit 3. As a result, D2O gas is generated from the D2 gas and O2 gas. The D2O generator 14 of this embodiment can generate D2O gas by burning D2 gas with O2 gas, or it can be used as follows... Figure 2 As shown, D2O gas is generated through a catalytic reaction between D2 gas and O2 gas.
[0053] The gas discharged from the gas storage tank 18 may contain D2 gas from gas G1, or it may contain D2 gas from the D2 supply unit 4. This D2 gas is converted into D2O gas within the D2O generator 14. Alternatively, the gas discharged from the gas storage tank 18 may also contain D2O gas from gas G1. The D2O generator 14 of this embodiment discharges "gas G2" containing this D2O gas. This gas G2 is supplied to the reactor 11 via flow path P2 and used as D2O gas within the reactor 11.
[0054] Control Unit 23 Figure 6 The control unit 23 of this embodiment controls various operations of the semiconductor manufacturing apparatus. It receives pressure measurement data from the pressure gauge 24 within the gas storage tank 18 and controls the valve 22 based on the received measurement data. For example, if the pressure within the gas storage tank 18 is higher than a threshold, since a sufficient amount of gas is contained within the gas storage tank 18, the valve 22 can be connected to the flow path P1 to discard gas G1. Conversely, if the pressure within the gas storage tank 18 is lower than the threshold, since there is insufficient gas in the gas storage tank 18, the valve 22 can be connected to the flow path P2 to recover gas G1.
[0055] As described above, the semiconductor manufacturing apparatus of this embodiment can recover the gas G1 discharged from reactor 11 for recycling. Therefore, according to this embodiment, similar to the first embodiment, the unnecessary waste of D2 gas in gas G1 can be suppressed.
[0056] Furthermore, the semiconductor manufacturing apparatus of this embodiment includes a D2O generator 14 downstream of the gas storage tank 18, which automatically supplies the gas stored in the gas storage tank 18 to the reactor 11. If the D2O generator 14 were not present downstream of the gas storage tank 18, the gas in the gas storage tank 18 would frequently reach high pressure, requiring the gas storage tank 18 to be replaced each time high pressure is reached. According to this embodiment, by using the gas stored in the gas storage tank 18 through the D2O generator 14, the gas in the gas storage tank 18 is less likely to reach high pressure, thus reducing the frequency of gas storage tank 18 replacement.
[0057] The reactor 11 of this embodiment can also use gases other than D2 and D2O to treat the substrate W. For example, the reactor 11 of this embodiment can also use H2 and H2O to treat the substrate W. In this case, the purifier 13 burns H2, and the gas storage tank 18 and D2O generator 14 treat the H2 and H2O.
[0058] The semiconductor manufacturing apparatus of this embodiment may also omit both D2 supply units 1 and 5, and instead only have one of them. For example, if the D2 gas required for reactor 11 can be adequately supplied using only D2 supply unit 5, then D2 supply unit 1 may not be provided. Furthermore, if the D2O gas required for reactor 11 can be adequately supplied using only gas storage tank 18 and D2O generator 14, then D2O supply unit 2 may not be provided.
[0059] Furthermore, the semiconductor manufacturing apparatus of this embodiment can be sold by the manufacturer to the purchaser in the form of having both the gas storage tank 18 and the D2O generator 14, or it can be sold by the manufacturer to the purchaser without at least one of the gas storage tank 18 and the D2O generator 14. For example, the gas storage tank 18 can be sold by the manufacturer to the purchaser as an option of the semiconductor manufacturing apparatus, or it can be prepared by the purchaser themselves. The same applies to the D2O generator 14.
[0060] As described above, the semiconductor manufacturing apparatus of this embodiment includes a recycling system that recovers the gas G1 discharged from reactor 11 for recirculation. Therefore, according to this embodiment, similar to the first embodiment, the unnecessary waste of gas G1 discharged from reactor 11 can be suppressed.
[0061] Furthermore, compared to the recovery system of the first embodiment, the recovery system of this embodiment has the advantage of simpler construction, for example. On the other hand, compared to the recovery system of this embodiment, the recovery system of the first embodiment has the advantage of being able to generate D2O gas with higher purity, for example. Furthermore, the recovery system described in the first embodiment... Figure 3 , Figure 4 ,and Figure 5 The content can also be applied to this implementation method.
[0062] Several embodiments have been described above, but these embodiments are merely illustrative and not intended to limit the scope of the invention. The novel apparatus and method described in this specification can be implemented in various other ways. Furthermore, various omissions, substitutions, and modifications can be made to the apparatus and method described in this specification without departing from the spirit of the invention. The appended claims and their equivalents are intended to encompass all such embodiments or variations included in the scope or spirit of the invention.
[0063] [Explanation of Symbols]
[0064] 1:D2 Supply Department
[0065] 2:D2O Supply Department
[0066] 3: O2 Supply Department
[0067] 4:D2 Supply Department
[0068] 5:D2 Supply Department
[0069] 11: Reactor
[0070] 12: Pump
[0071] 13: Air purifier
[0072] 14: D2O Generator
[0073] 14a: Reactor
[0074] 14b:Pt catalyst
[0075] 15: D2O condenser
[0076] 16:D2O can
[0077] 17: D2O vaporizer
[0078] 18: Gas storage tank
[0079] 21: Level gauge
[0080] 22: Valve
[0081] 23: Control Department
[0082] 24: Pressure gauge
[0083] 31: Semiconductor substrate
[0084] 32: Insulating film
[0085] 33: Source Layer
[0086] 34: Insulating film
[0087] 35: Gate layer
[0088] 35a: Oxide film
[0089] 36: Insulating film
[0090] 37: Stacked membranes
[0091] 38: Columnar part
[0092] 39: Insulating film
[0093] 41: Metal layer
[0094] 42: Lower semiconductor layer
[0095] 43: Intermediate semiconductor layer
[0096] 43a: Oxide film
[0097] 44: Upper semiconductor layer
[0098] 44a: Oxide film
[0099] 45: Sacrificial Layer
[0100] 46: Insulation layer
[0101] 47: Barrier insulating film
[0102] 48: Electrode layer
[0103] 51: Barrier insulating film
[0104] 52: Charge Accumulation Layer
[0105] 53: Tunnel insulation film
[0106] 54: Channel semiconductor layer
[0107] 55: Core insulating film.
Claims
1. A semiconductor manufacturing apparatus, comprising: The substrate processing unit processes the substrate using a gas of a first substance and a gas of a second substance, and discharges a first gas containing at least one of the first and second substances. The waste section discards the first gas discharged from the substrate processing section; and The recovery unit uses the first substance in the first gas discharged from the substrate processing unit to generate a second gas containing the second substance, and supplies the second gas to the substrate processing unit; wherein... The recovery unit includes: a generator for generating the second substance using the first substance in the first gas; and a containment unit for containing a liquid containing the second substance generated by the generator. The semiconductor manufacturing apparatus also includes: The measuring unit measures the liquid level within the containing section; A switching unit that switches the destination of the first gas discharged from the substrate processing unit between the waste unit and the recycling unit; and The control unit controls the switching unit based on the liquid level measured by the measuring unit.
2. The semiconductor manufacturing apparatus according to claim 1, wherein the first substance is D2 or H2, and the second substance is D2O or H2O, wherein, H represents hydrogen, D represents deuterium, and O represents oxygen.
3. The semiconductor manufacturing apparatus according to claim 2, wherein the recycling unit reacts D2 or H2, which is the first substance, with O2 to generate D2O or H2O, which is the second substance.
4. The semiconductor manufacturing apparatus according to claim 1, wherein the recovery unit further comprises a condenser for converting the second substance generated by the generator from a gas into a liquid, and the liquid discharged from the condenser is contained within the containing unit.
5. The semiconductor manufacturing apparatus according to claim 1, wherein The containment section discharges the liquid; and The recovery unit also includes a vaporizer that converts the liquid discharged from the containment unit into the second gas, and supplies the second gas discharged from the vaporizer to the substrate processing unit.
6. The semiconductor manufacturing apparatus according to claim 1, wherein the waste section includes a purifier for purifying the first gas discharged from the substrate processing section, and the first gas purified by the purifier is discarded.
7. The semiconductor manufacturing apparatus according to claim 6, wherein the purifier purifies the first gas by converting the first substance in the first gas into the second substance.
8. The semiconductor manufacturing apparatus according to claim 1, wherein the substrate processing unit anneals the substrate using a gas of the first substance and a gas of the second substance.
9. A semiconductor manufacturing apparatus, comprising: The substrate processing unit processes the substrate using a gas of a first substance and a gas of a second substance, and discharges a first gas containing at least one of the first and second substances. The waste section discards the first gas discharged from the substrate processing section; and The recovery unit uses the first substance in the first gas discharged from the substrate processing unit to generate a second gas containing the second substance, and supplies the second gas to the substrate processing unit; wherein... The recovery unit includes a containment section for containing the first gas; The semiconductor manufacturing apparatus also includes: The measuring unit measures the pressure of the gas inside the containment section; A switching unit that switches the destination of the first gas discharged from the substrate processing unit between the waste unit and the recycling unit; and The control unit controls the switching unit based on the pressure measured by the measuring unit.
10. The semiconductor manufacturing apparatus according to claim 9, wherein the recovery unit further comprises a generator for generating the second substance using the first substance in the first gas discharged from the containment unit, and supplies the second gas containing the second substance generated by the generator to the substrate processing unit.