Semiconductor package and method of forming the same

Abstract

The application provides a semiconductor package and a forming method thereof. The semiconductor package comprises a die and a substrate. The substrate comprises a plurality of layers in a laminated stack. The die is disposed on the substrate. A tubular structure is embedded in the substrate. A cross-sectional shape of the tubular structure is closed. The tubular structure has a joint surface in a horizontal plane. The semiconductor package provided by the application at least solves the problem of heat pipe falling off in the semiconductor package.

Description

Technical Field

[0001] This application relates to the field of semiconductors, and more specifically, to a semiconductor package having a tubular structure with heat dissipation function embedded in a substrate and a method for forming the same. Background Technology

[0002] Existing BT resin (Bismaleimide Triazine) core substrates have low thermal conductivity, according to reference... Figure 1 When the die is embedded in the substrate 10, heat tends to accumulate within the substrate 10. If the die is a high-power-consuming chip that generates a lot of heat, the heat generated during chip operation will accumulate on the substrate 10 because it cannot be dissipated in time. As a result, the chip temperature will not meet customer requirements. To remove the heat generated during chip operation and avoid its accumulation on the substrate 10, a known method is to embed a "heat pipe" 20 within the substrate 10. The heat pipe 20 contains a phase change material, which can change between a liquid phase and a vapor phase depending on the temperature. Therefore, the phase change material within the heat pipe 20 can absorb and release heat to achieve heat conduction. However, the material of the heat pipe 20 is metal, which is different from the material of the substrate 10. The coefficients of thermal expansion (CTE) of the two are different. When the heat pipe 20 is embedded in the substrate 10, the two will exhibit different deformations due to thermal expansion and contraction. Therefore, the heat pipe 20 is prone to detaching from the substrate 10 and is not conducive to heat conduction and dissipation. Summary of the Invention

[0003] In view of the problems existing in the related technologies, the purpose of this application is to provide a semiconductor package and a method for forming the same, which at least solves the problem of heat pipe detachment in semiconductor packages.

[0004] To achieve the above objectives, this application provides a semiconductor package, including: a die and a substrate, wherein the substrate includes multiple layers stacked in layers, the die is disposed on the substrate, a tubular structure is embedded in the substrate, the cross-sectional shape of the tubular structure is closed, and the tubular structure has a joint surface in a horizontal plane.

[0005] In some embodiments, the tubular structure is composed of two metallic materials with different lattice arrangements.

[0006] In some embodiments, the two metal materials with different lattice arrangements include a first metal material and a second metal material located around the first metal material, wherein the second metal material forms the outer surface of a tubular structure and is denser than the first metal material.

[0007] In some embodiments, the first metal material is an electroplated metal layer, and the second metal material is a sputtered seed layer.

[0008] In some embodiments, the inner surface of the tubular structure is a rough surface with microstructures.

[0009] In some embodiments, one end of the tubular structure overlaps with the position of the core.

[0010] In some embodiments, the other end of the tubular structure is connected to a cold zone.

[0011] In some embodiments, the cold zone includes a through-hole located beneath the substrate.

[0012] In some embodiments, the tubular structure includes a bend, which is disposed adjacent to a through hole in the substrate.

[0013] In some embodiments, the mating surface of the tubular structure is parallel to the extension direction of the tubular structure.

[0014] In some embodiments, adjacent layers of the substrate have bonding surfaces.

[0015] In some embodiments, the bonding surface of the tubular structure coincides with a bonding surface between adjacent layers of the substrate.

[0016] This application also provides a method for forming a semiconductor package, comprising: providing a first dielectric layer for forming a substrate, and forming a first groove on a first surface of the first dielectric layer; providing a second dielectric layer for forming a substrate, and forming a second groove on a second surface of the second dielectric layer; and pressing the first dielectric layer and the first surface against the second surface of the second dielectric layer, such that the first groove and the second groove are combined to form a tubular structure.

[0017] In some embodiments, before laminating the first dielectric layer and the first surface against the second surface of the second dielectric layer, the method further includes: forming a seed layer on the surfaces within the first and second grooves by a sputtering process; and forming a metal layer on the seed layer by an electroplating process. Attached Figure Description

[0018] The various aspects of the invention can be best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that, in accordance with standard industrial practice, the various components are not drawn to scale. In fact, for clarity of discussion, the dimensions of the various components may be arbitrarily increased or decreased.

[0019] Figure 1 This is a schematic diagram of the structure of a semiconductor package in the prior art.

[0020] Figure 2 This is a cross-sectional schematic diagram of a semiconductor package according to an embodiment of this application.

[0021] Figure 3 This is a schematic diagram of the microstructure of a tubular structure of a semiconductor package according to an embodiment of this application.

[0022] Figures 4a to 4e This is a schematic diagram of the cross-sectional shape of a tubular structure according to several embodiments of this application.

[0023] Figure 5a and Figure 5b This is a cross-sectional schematic diagram of a semiconductor package according to another embodiment of this application.

[0024] Figure 6 This is a top view schematic diagram of a semiconductor package according to an embodiment of this application.

[0025] Figure 7 This is a three-dimensional schematic diagram of a substrate of a semiconductor package according to an embodiment of this application.

[0026] Figures 8a-8e These are top views of the structures of several examples of semiconductor packages.

[0027] Figure 9 yes Figures 8a-8e Temperature bar charts for several examples are shown.

[0028] Figures 10a-10e This is a cross-sectional schematic diagram of each step in the method for forming a semiconductor package according to an embodiment of this application. Detailed Implementation

[0029] To better understand the spirit of the embodiments of this application, the following description is based on some preferred embodiments of this application.

[0030] Embodiments of this application will be described in detail below. Throughout this specification, identical or similar components and components having identical or similar functions are indicated by similar reference numerals. The embodiments described herein with reference to the accompanying drawings are illustrative and diagrammatic in nature and are intended to provide a basic understanding of this application. The embodiments of this application should not be construed as limiting this application.

[0031] As used herein, the terms “approximately,” “generally,” “substantially,” and “about” are used to describe and indicate minor variations. When used in conjunction with an event or situation, these terms may refer to examples in which the event or situation occurred precisely or in examples in which the event or situation occurred very approximately.

[0032] For ease of description, "first," "second," "third," etc., can be used in this document to distinguish different components of a figure or a series of figures. "First," "second," "third," etc., are not intended to describe the corresponding components.

[0033] Figure 2 This is a cross-sectional schematic diagram of a semiconductor package according to an embodiment of this application. (Reference) Figure 2 As shown, the semiconductor package 1000 includes a substrate 100 and a die 200 stacked on the substrate 100 in the vertical direction Z. A tubular structure 300 is embedded in the substrate 100. Figure 2 In the cross-sectional view shown, the tubular structure 300 has a closed cross-sectional shape. In some embodiments, the substrate 100 may be a core substrate, and the tubular structure 300 may be disposed in the core layer of the core substrate.

[0034] The tubular structure 300 has a mating surface 302 and a first portion 310 and a second portion 320 that abut against each other at the mating surface 302. The mating surface 302 is located in a horizontal plane perpendicular to the vertical direction Z. The first portion 310 and the second portion 320 of the tubular structure 300 may be formed in different layers of a substrate and then abut against each other, thereby forming the mating surface 302 between the first portion 310 and the second portion 320. The tubular structure 300 with the mating surface 302 formed in this way can avoid the problem of it detaching from the substrate.

[0035] exist Figure 2 In one embodiment, the substrate 100 includes a stacked first layer 110 and a second layer 120, wherein the second layer 120 is located above the first layer 110. A first portion 310 of the tubular structure 300 is located in and physically contacts the first layer 110. A second portion 320 is located in and physically contacts the second layer 120. The first layer 110 and the second layer 120 may be made of a dielectric material, such as polypropylene (PP). The materials of the first layer 110 and the second layer 120 may be the same or different. A bonding surface 102 is provided between the first layer 110 and the second layer 120. The bonding surface 302 between the first portion 310 and the second portion 320 is coplanar with the bonding surface 102 between the first layer 110 and the second layer 120. Figure 2 The diagram shows two layers of substrate 100 (i.e., first layer 110 and second layer 120). In other embodiments, substrate 100 may have more than two layers. The tubular structure 300 may be disposed in any two adjacent layers, and the bonding surface of the tubular structure 300 is coplanar with the bonding surface of the two layers. The number of tubular structures 300 in substrate 100 may be set to any number.

[0036] By embedding a tubular structure 300 within the substrate 100, the heat generated by the die 200 can be dissipated, improving the heat dissipation capacity of the semiconductor package 1000. Furthermore, the embedded tubular structure 300 design eliminates the need for external heat dissipation devices on the substrate 100, reducing the size of the semiconductor package 1000 and making it more aligned with the trend towards miniaturization.

[0037] Specifically, the tubular structure 300 is made of two different lattice arrangements: a first metal material 330 and a second metal material 340, with the first metal material 330 located around the first metal material 330. Because the lattice arrangements of the first metal material 330 and the second metal material 340 are different, their densities differ. According to an embodiment of this application, the second metal material 340 is denser than the first metal material 330. The first metal material 330 can be an electroplated metal layer (e.g., a copper layer), and the second metal material 340 can be a sputtered seed layer (e.g., a copper seed layer). In this embodiment, the sputtered seed layer is a metal layer attached to the surface of the substrate 100 using a sputtering method. This sputtered metal layer has strong adhesion to the substrate, a heterogeneous material. Subsequently, an electroplated metal layer is deposited to form the tube wall structure, thereby improving the delamination and detachment phenomena that occur during use when the heat sink is pressed into the substrate. In other embodiments, the first metal material 330 and the second metal material 340 may also be other metal materials.

[0038] The second metal material 340 forms the outer surface 345 of the tubular structure 300. The outer surface 345 of the tubular structure 300 may be in physical contact with the first layer 110 and the second layer 120. The first metal material 330 forms the inner surface 335 of the tubular structure 300. Figure 3 This is a schematic diagram of the microstructure of a tubular structure of a semiconductor package according to an embodiment of this application. (Reference) Figure 3 As shown, microstructures 350 may be provided on the inner surface 335 of the tubular structure 300 to make the inner surface 335 a rough surface. In some embodiments, the microstructures 350 may be dendritic in shape, and in other embodiments, the microstructures 350 may be other shapes. The microstructures 350 may be used to guide the phase change material of the liquid phase within the tubular structure 300.

[0039] exist Figure 2 In the illustrated embodiment, the tubular structure 300 has a circular closed cross-sectional shape. In other embodiments, the tubular structure 300 may have other closed cross-sectional shapes. Figures 4a to 4e This is a schematic diagram of the cross-sectional shape of a tubular structure according to several embodiments of this application. (Reference) Figures 4a to 4cAs shown, the cross-sectional shape of the tubular structure 300 also includes, but is not limited to, an ellipse. Figure 4a ),rectangle( Figure 4b ), trapezoidal ( Figure 4c ) etc. In Figure 4a and Figure 4b In the illustrated embodiment, the cross-sectional shapes of the first portion 310 and the second portion 320 of the tubular structure 300 are symmetrical with respect to the plane containing the mating surface 302. The lateral extension line of the mating surface 302 passes through the center of the circular, elliptical, or rectangular cross-sectional shape of the tubular structure 300. However, in other embodiments, the cross-sectional shapes of the first portion 310 and the second portion 320 of the tubular structure 300 may be asymmetrical with respect to the mating surface 302.

[0040] In some embodiments, reference Figure 4d and Figure 4e As shown, the first portion 310 of the tubular structure 300 is embedded in the second layer 120, while the second portion 320 is disposed on the surface of the first layer 110. The first portion 310 and the second portion 320 are mated to form a semi-elliptical cross-sectional shape. When the substrate 100 has multiple tubular structures 300, the multiple tubular structures 300 may have the same cross-sectional shape, or the multiple tubular structures 300 may be configured to have different cross-sectional shapes.

[0041] Figure 5a This is a cross-sectional schematic diagram of a semiconductor package according to another embodiment of this application. (Reference) Figure 5a As shown, a tubular structure 300 extends within a substrate 100. One end 301 of the tubular structure 300 overlaps with the die 200 in the vertical direction Z, and the other end 303 of the tubular structure 300 is connected to a cold zone 400. The cold zone 400 is located below the substrate 100. In this embodiment, the die 200 and the cold zone 400 do not overlap in the vertical direction Z. The cold zone 400 may include a plurality of through holes 410 exposed from the lower surface of the substrate 100 and extending to the outside of the substrate 100. In some embodiments, the through holes 410 may be formed of a metallic material with good heat dissipation properties. The through holes 410 may be non-electrical. The through holes 410 and the tubular structure 300 may overlap in the vertical direction Z. The through holes 410 may be connected (physically contacted) to the tubular structure 300. In some implementations, a molding member 500 surrounding the die 200 is also disposed above the substrate 100 to protect the die 200.

[0042] In operation, a phase change material (PCM) that changes its state according to temperature is disposed within the tubular structure 300. The PCM exists in a vapor phase at high temperatures and a liquid phase at low temperatures. The heat generated by the core 200 causes the PCM in the tubular structure 300 below to absorb heat and become vaporized. The vaporized PCM then moves along the extension path of the tubular structure 300 from the core 200 to the cold zone 400. At this point, the PCM cools and changes from a vapor to a liquid phase, simultaneously releasing the absorbed heat in the cold zone 400, thus achieving heat conduction from the core 200 to the cold zone 400. Subsequently, the liquid PCM returns from the cold zone 400 to the core 200 via capillary action through the microstructures 350 on the inner surface 335 of the tubular structure 300, for further heat conduction. Therefore, by providing a cold zone 400 near the end 303 of the tubular structure 300 away from the core 200, the heat generated by the core 200 can be transferred to the cold zone 400 via the tubular structure 300 (reference). Figure 5a (As indicated by the middle arrow), heat dissipation efficiency can be improved. Heat dissipation efficiency can be further improved by providing through-holes 410 connected to the tubular structure 300 in the cold zone 400. Due to the improved heat dissipation efficiency, the chip density that can be arranged in a given area can be increased accordingly.

[0043] Figure 5b This is a cross-sectional schematic diagram of a semiconductor package according to another embodiment of this application. Figure 5b The illustrated embodiments and Figure 5a The embodiments shown are similar, and will only be discussed below. Figure 5b and Figure 5a The differences. Figure 5b In one embodiment, two adjacent dies 200a and 200b are disposed on the substrate 100. One end 301 of the tubular structure 300 may be disposed adjacent to the gap between the two dies 200a and 200b. For example, one end 301 of the tubular structure 300 may overlap with the sidewall of the adjacent die 200b of die 200a in the vertical direction Z. In other embodiments, one end 301 of the tubular structure 300 may overlap with the gap between dies 200a and 200b in the vertical direction Z, or one end 301 of the tubular structure 300 may overlap with the sidewall of the adjacent die 200a of die 200b in the vertical direction Z. Thus, both dies 200a and 200b can be effectively cooled through the common tubular structure 300.

[0044] Figure 6 This is a top view schematic diagram of a semiconductor package according to an embodiment of this application. (Reference) Figure 6As shown, the tubular structure 300 may have bends 360a and 360b to change the extension path of the tubular structure 300. In some embodiments, a through hole 160 is provided in the substrate 100, and the bends 360a and 360b of the tubular structure 300 may be provided adjacent to the through hole 160. Specifically, when the extension path of the tubular structure 300 will pass through the through hole 160, a bend 360a is provided adjacent to the through hole 160 so that the extension path of the tubular structure 300 bypasses the through hole 160. Then, a bend 360b is provided so that the extension path of the tubular structure 300 extends toward the cold zone 400.

[0045] Figure 7 This is a perspective view of a substrate of a semiconductor package according to an embodiment of this application. The bending portion 360 can change the extension direction of the tubular structure 300 by 90 degrees. In other embodiments, the bending portions (e.g., bending portions 360a, 360b, 360) can be disposed adjacent to other electrical functional components (e.g., conductive lines or passive components) in the substrate 100 to avoid these components. Depending on the location planning of the lines and vias in the substrate 100, the extension direction of the tubular structure 300 can be arbitrarily and appropriately changed by the bending portions.

[0046] For reference Figure 6 and Figure 7 When setting up the tubular structure 300, it is necessary not only to arrange it according to the arrangement of heat sources that require heat dissipation, but also to consider the position planning of the lines and vias in the substrate 100. Furthermore, the electrical functional components can be avoided by setting up bends to prevent damage to the electrical path of the semiconductor package 1000, so that the semiconductor package 1000 can maintain complete circuit signals.

[0047] Figures 8a-8e These are top views of the structures of several examples of semiconductor packages. Figure 9 yes Figures 8a-8e The following are examples of temperature bar charts. Figures 8a to 8e as well as Figure 9 Comparison shown Figures 8a-8e The heat dissipation effect is shown in several examples.

[0048] First, refer to Figure 8a In the example 810 shown, only a cold zone 400 including multiple through holes 410 is provided below the core 200, without the tubular structure 300 as described above.

[0049] exist Figure 8bIn Example 820 shown, a tubular structure 300 extending through the underside of the die 200 is provided in the substrate 100 below the die 200. The tubular structure 300 extends away from the die 200 along directions ① and ②, respectively. No cold zone is provided in this Example 820.

[0050] exist Figure 8c In Example 830 shown, a tubular structure 300 extending along direction ② is provided below the core 200. Furthermore, a cold zone 400 including a plurality of through holes 410 is provided at the end of the tubular structure 300 away from the core 200.

[0051] exist Figure 8d In Example 840, a tubular structure 300 extending along direction ③ is provided below the core 200. In Example 840, a cold zone 400 including a plurality of through holes 410 is also provided at the end of the tubular structure 300 away from the core 200.

[0052] exist Figure 8e In Example 850 shown, a plurality of tubular structures 300 extending along directions ①, ② and ③ are provided below the first core 200a. Among them, for the tubular structure 300 extending along direction ③, a cold zone 400 including a plurality of through holes 410 is provided at the end of the tubular structure 300 away from the core 200.

[0053] Figure 9 It shows Figures 8a-8e The temperature histograms for several examples are shown. For comparison, three bars, Ta, Tb, and Tc, are shown for each of the examples 810-850 above. The three bars Ta, Tb, and Tc correspond to the dimensions of die 200. The dimensions of die 200 corresponding to each bar Ta are 2.80 x 5.90 x 0.78 mm. 3 The posts Tb and Tc correspond to the same die 200 size of 2.80 x 2.80 x 0.78 mm. 3 .

[0054] Combination Figures 8a to 9 As shown, for the larger die 200 that generates more heat, as indicated by column Ta, Examples 820-850 effectively reduce the temperature of the die 200 compared to Example 810 without the tubular structure 300. For the smaller die 200, as indicated by columns Tb and Tc, Examples 820-850 also reduce the temperature of the die 200 compared to Example 810 without the tubular structure 300. Comparing Examples 820-850, it is evident that Example 850 has the best heat dissipation effect. Furthermore, comparing columns Tb and Tc, columns Tb and Tc achieve essentially the same results in each Example 820-850, which demonstrates the stable heat dissipation effect of this application.

[0055] The semiconductor package embodiments of this application can be applied to embedded chip packaging (SESUB), package-on-package (PoP) technology, and 3D-fanout-package (3DFOP) technology. In some embodiments, the semiconductor package can also be applied to ball grid array package (BGA) and antenna in package (AiP). Wherever there is a problem of excessive die temperature caused by high-density heat sources in the semiconductor package, the heat dissipation mode provided in the embodiments of this application can be used to improve its heat dissipation.

[0056] Another aspect of this application provides a method for forming a semiconductor package. Figures 10a-10e A schematic diagram of the various steps in a method for forming a semiconductor package according to an embodiment of this application is shown.

[0057] refer to Figure 10a A first dielectric layer 910 and a second dielectric layer 920 are provided for forming a substrate. In some embodiments, the materials of the first dielectric layer 910 and the second dielectric layer 920 may be, for example, polypropylene (PP).

[0058] Then, for example, an etching process can be used to form a first groove 930 and a second groove 940 on the first dielectric layer 910 and the second dielectric layer 920, respectively. Figure 10c ). refer to Figure 10b Taking the first dielectric layer 910 as an example, a photoresist 912 is disposed on the surface of the first dielectric layer 910, and then a patterned photomask 914 is disposed on the photoresist 912. The first dielectric layer 910, photoresist 912, and photomask 914 are exposed to radiation. The photoresist 912 and the first dielectric layer 910 not covered by the photomask 914 are removed, thereby forming a first groove 930 in the first dielectric layer 910. Figure 10c In other embodiments, other suitable methods may be used to form the grooves of the first dielectric layer 910. In some embodiments, the grooves 940 of the second dielectric layer 920 may be formed using the same method as that used to form the grooves of the first dielectric layer 910. Figure 10c ).

[0059] refer to Figure 10c ,pass Figure 10bThe steps shown involve forming a first groove 930 and a second groove 940 in the first dielectric layer 910 and the second dielectric layer 920, respectively. In some embodiments, the shapes of the first groove 930 and the second groove 940 include semicircular, semi-elliptical, rectangular, etc., or the first groove 930 and the second groove 940 may have inclined sidewalls. The first groove 930 and the second groove 940 may have the same or different shapes. The first groove 930 and the second groove 940 may have the same or different depths. The number of first grooves 930 may be the same as or different from the number of second grooves 940. A plurality of first grooves 930 and a plurality of second grooves 940 may correspond one-to-one. The first groove 930 at the surface of the first dielectric layer 910 and the second groove 940 at the second dielectric layer 920 have the same shape and size.

[0060] In some embodiments, depending on the layout design of the through hole or other electrical functional components to be formed, the first groove 930 and the second groove 940 may be respectively provided with bent portions (corresponding to the above-mentioned bent portions 360a, 360b, 360) to change the extension direction of the first groove 930 and the second groove 940.

[0061] refer to Figure 10d A first portion 310 and a second portion 320 of a tubular structure are formed in a first groove 930 and a second groove 940. In some embodiments, forming the first portion 310 includes forming a seed layer (i.e., the aforementioned second metal material 340, such as a copper seed layer) in the first groove 930 by a sputtering process, and then forming a metal layer (i.e., the aforementioned first metal material 330, such as copper) on the seed layer by an electroplating process. Similarly, forming the second portion 320 includes forming a seed layer in the second groove 940 by a sputtering process, and then forming a metal layer on the seed layer by an electroplating process. Because the sputtered metal has a strong adhesion to the substrate, a heterogeneous material, when the seed layer is formed by sputtering, this application uses sputtering to attach the sputtered seed layer to the surface of the first dielectric layer 910 and the second dielectric layer 920. Subsequently, an electroplating metal layer is deposited to form the tube wall structure. The sputtered metal has a strong adhesion to the first dielectric layer 910 and the second dielectric layer 920, which can improve the delamination and detachment phenomenon that occurs during use when the heat sink is pressed into the substrate.

[0062] Then, the surfaces of the first portion 310 and the second portion 320 in the first groove 930 and the second groove 940 can be processed to form microstructures (e.g., Figure 3 The microstructure shown in Figure 350).

[0063] refer to Figure 10eThe first dielectric layer 910 and the second dielectric layer 920 are pressed together relative to each other, so that the first portion 310 and the second portion 320 are correspondingly joined to form a tubular structure 300. The resulting tubular structure 300 has a bonding surface between the first portion 310 and the second portion 320, and the bonding surface between the first portion 310 and the second portion 320 (as referenced above) Figure 2 The described bonding surface 302) has a bonding surface between the first dielectric layer 910 and the second dielectric layer 920 (as described above). Figure 2 The described mating surfaces 102) are coplanar.

[0064] After laminating the first dielectric layer 910 and the second dielectric layer 920, a sealing and vacuuming process can be performed on the tubular structure 300. Then, after forming the tubular structure 300, a phase change material is filled into the tubular structure 300.

[0065] In the method for forming a semiconductor package provided in this application embodiment, the tubular structure 300 can be formed directly in the substrate 900 by, for example, sputtering or electroplating. The method for forming the tubular structure 300 overcomes the problem that in the traditional setting, the heat pipe is buried in the substrate, and the heat pipe is prone to falling off when heated due to the difference in thermal expansion coefficient with the substrate.

[0066] The tubular structure 300 formed by the method provided in this application, such as sputtering or electroplating, directly forming the tubular structure 300 within the substrate 900, can overcome the problems of fragility and reduced heat transfer efficiency caused by the large size of existing heat pipes (existing micro commercial heat pipes have a diameter of approximately 2mm to 10mm) after being embedded in the substrate due to structural shrinkage. It also overcomes the problem of substrate structural fragility caused by embedding traditional heat pipes within the substrate. Furthermore, in some embodiments, a sputtered seed layer is first formed by sputtering. This sputtered seed layer has strong adhesion to the substrate, a heterogeneous material. Subsequently, an electroplated metal layer is deposited to form the tubular structure 300. This improves upon the delamination and detachment phenomena that occur during use when the heat pipe is pressed into the substrate.

[0067] The foregoing summary outlines features of several embodiments that enable those skilled in the art to better understand various aspects of this disclosure. Those skilled in the art should understand that other processes and structures can be readily designed or modified based on this invention to achieve the same objectives and / or benefits as the embodiments described herein. Those skilled in the art should also recognize that these equivalent structures do not depart from the spirit and scope of the invention, and that various changes, substitutions, and modifications can be made without departing from the spirit and scope of the invention.

Claims

1. A semiconductor package, characterized in that, include: Core; as well as A substrate comprising multiple layers stacked in a layered manner, a die disposed on the substrate, a tubular structure embedded within the substrate, the tubular structure having a closed cross-sectional shape, and the tubular structure having a mating surface in a horizontal plane. The tubular structure includes a first metal material and a second metal material located around the first metal material. The second metal material forms the outer surface of the tubular structure. The first metal material is an electroplated metal layer, and the second metal material is a sputtered seed layer.

2. The semiconductor package according to claim 1, characterized in that, The first metallic material and the second metallic material are metallic materials with different crystal lattice arrangements.

3. The semiconductor package according to claim 2, characterized in that, The second metallic material is denser than the first metallic material.

4. The semiconductor package according to claim 1, characterized in that, The inner surface of the tubular structure is a rough surface with microstructures.

5. The semiconductor package according to claim 1, characterized in that, One end of the tubular structure overlaps with the position of the tube core.

6. The semiconductor package according to claim 5, characterized in that, The other end of the tubular structure is connected to the cold zone.

7. The semiconductor package according to claim 6, characterized in that, The cold zone includes a through-hole located beneath the substrate.

8. The semiconductor package according to claim 1, characterized in that, The tubular structure includes a bent portion, which is disposed adjacent to a through hole in the substrate.

9. The semiconductor package according to claim 1, characterized in that, The joint surface of the tubular structure is parallel to the extension direction of the tubular structure.

10. The semiconductor package according to claim 1, characterized in that, The substrate has bonding surfaces between adjacent layers of the plurality of layers.

11. The semiconductor package according to claim 10, characterized in that, The bonding surface of the tubular structure coincides with a bonding surface between adjacent layers of the substrate.

12. A method for forming a semiconductor package, characterized in that, include: A first dielectric layer is provided for forming a substrate, and a first groove is formed on a first surface of the first dielectric layer; A second dielectric layer is provided for forming the substrate, and a second groove is formed on a second surface of the second dielectric layer; Seed layers are formed on the surfaces of the first and second grooves by a sputtering process; A metal layer is formed on the seed layer by an electroplating process; The first dielectric layer and the first surface are pressed together with the second surface of the second dielectric layer, so that the first groove and the second groove are combined to form a tubular structure.

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