用于处理基板的方法和设备
By controlling the gradual changes in pressure and plasma state within the substrate processing chamber, the problem of insufficient metal deposition coverage on the substrate was solved, achieving better metal deposition coverage, especially in fine structures.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- APPLIED MATERIALS INC
- Filing Date
- 2021-07-12
- Publication Date
- 2026-07-17
AI Technical Summary
During substrate manufacturing, as trenches and vias become smaller, metal deposition interconnects and gap filling become increasingly difficult. Traditional methods struggle to ensure sufficient metal coverage on the substrate, especially at the structure entrances where overhangs and scattering are prone to occur.
By igniting plasma at different pressure stages within the processing chamber and gradually reducing the pressure within a specific time range to maintain the plasma state, plasma deposition sputtering materials are utilized. This includes reducing the first pressure to a second pressure within a first time range, then reducing it to a third pressure within a smaller time range than the first time range, and maintaining the third pressure within the third time range to ensure the continuity of the plasma.
It significantly reduces neutral particles, increases ionization rate, and improves metal deposition coverage on substrates, especially in trench and via structures.
Smart Images
Figure CN114981925B_ABST