Chuck, substrate holding device, substrate processing device, and article manufacturing method

Abstract

The present application provides a chuck, a substrate holding device, a substrate processing device, and an article manufacturing method, in which the arrangement positions of the partition walls and the protrusions are in a predetermined relationship, thereby reducing the distortion of the substrate. A chuck for adsorbing and holding a substrate, characterized by comprising a plurality of protrusions abutting against the back surface of the adsorbed and held substrate, a ring-shaped partition wall, and a bottom portion in which the plurality of protrusions and the partition wall are arranged, the plurality of protrusions being composed of a plurality of groups each of which is composed of a first protrusion to be arranged on the outer side of the partition wall and a second protrusion to be arranged on the inner side of the partition wall and adjacent to the first protrusion across the partition wall, wherein the distance between the first protrusion and the second protrusion included in each of the plurality of groups is L, the distance between the second protrusion and the partition wall is s, and s / L < 0.5 is satisfied.

Description

Technical Field

[0001] This invention relates to chucks, substrate holding devices, substrate processing devices, and methods for manufacturing articles. Background Technology

[0002] In recent years, exposure equipment (reduction projection exposure equipment) used in semiconductor device manufacturing and other applications has seen a gradual development towards higher numerical aperture (NA) to address device miniaturization. While higher NA increases resolution, it reduces the effective depth of focus. Therefore, to maintain resolution while ensuring sufficient usable depth, efforts are being made to improve wafer smoothness (the flatness of the substrate surface). This includes measures such as reducing image plane curvature in projection optics, improving wafer (substrate) thickness uniformity, and enhancing the planar accuracy of chucks used to hold and hold the wafer.

[0003] Foreign matter can be trapped between the chuck and the substrate, causing a decrease in the flatness of the substrate surface. If foreign matter is trapped, the trapped portion of the substrate may deform and bulge, resulting in poor pattern formation and reduced yield. To accurately avoid this yield reduction caused by foreign matter, a pin-contact chuck (pin chuck) with pins (protrusions) is used, which significantly reduces the contact rate between the chuck and the substrate.

[0004] When using this pin chuck, there is a problem where the substrate deforms or flexes (twistrates) between the protrusions due to vacuum attraction, resulting in a decrease in the flatness of the substrate surface. Various solutions have been proposed to improve this. For example, in Japanese Patent No. 4298078, an annular partition (flange) surrounding multiple protrusions is provided in the pin chuck, and this partition is positioned between the protrusions on the outer peripheral side and the protrusions on the inner peripheral side that are adjacent to the protrusions on the outer peripheral side. Moreover, the partition is positioned as close as possible to the protrusions on the outer peripheral side.

[0005] Furthermore, in Japanese Patent Application Publication No. 2001-185607, the partition wall is positioned at a location further outward than the protrusion located on the outermost periphery, or between the outermost periphery protrusion and the protrusion on the inner periphery adjacent to the outermost periphery protrusion. As for the placement of this partition wall, it is positioned within a predetermined range in the peripheral direction from the center of the distance between the outermost periphery protrusion and the protrusion on the inner periphery adjacent to the outermost periphery protrusion.

[0006] If a substrate is vacuum-adsorbed, an adsorption force is generated on the inner side of the partition wall, maintaining an approximate vacuum pressure. However, the outer side of the partition wall is at atmospheric pressure, resulting in almost no adsorption force. In Japanese Patent No. 4298078 and Japanese Unexamined Patent Application Publication No. 2001-185607, the partition wall is positioned near the outer peripheral protrusion to maximize the adsorption force on the outer side of the substrate. However, because the adsorption force acts on the outer side of the substrate, there are problems such as reduced flatness of the substrate surface and increased substrate distortion (deformation). Summary of the Invention

[0007] In this invention, the objective is to provide, for example, a chuck that reduces substrate distortion by positioning the partitions and protrusions in a predetermined relationship.

[0008] As one aspect of the present invention, the chuck is characterized in that it includes a plurality of protrusions abutting against the back side of a substrate that is adsorbed and held, an annular partition wall, and a bottom on which the plurality of protrusions and the partition wall are disposed. The plurality of protrusions are composed of a plurality of groups consisting of a first protrusion disposed on the outside of the partition wall and a second protrusion disposed on the inside of the partition wall and adjacent to the first protrusion across the partition wall. When the distance between the first protrusion and the second protrusion included in each of the plurality of groups is L, and the distance between the second protrusion and the partition wall is s, s / L < 0.5 is satisfied.

[0009] Other features of the invention will become apparent from the following description of exemplary embodiments with reference to the accompanying drawings. Attached Figure Description

[0010] Figure 1 This is a schematic diagram illustrating the structure of the exposure apparatus of Example 1.

[0011] Figure 2 This is a diagram illustrating a material mechanics model of a beam that is fixed on one side and free on the other side under uniformly distributed loads.

[0012] Figure 3A as well as Figure 3B This is a diagram illustrating the substrate holding device of Embodiment 1.

[0013] Figure 4A as well as Figure 4B This is a diagram illustrating a material mechanics model of a cantilever beam.

[0014] Figure 5 This is a diagram illustrating the relationship between the deformation of Embodiment 1 and the arrangement position of the partition wall.

[0015] Figure 6A as well as Figure 6B This is a diagram illustrating the substrate holding device of Embodiment 2.

[0016] Figure 7Aas well as Figure 7B This is a diagram illustrating the substrate holding device of Embodiment 3.

[0017] Figure 8 This is a flowchart illustrating a material mechanics model of a cantilever beam in the absence of the outer peripheral convex portion of Example 3.

[0018] Figure 9 This is a cross-sectional view of the chuck in Example 3.

[0019] Figure 10A as well as Figure 10B This is a diagram illustrating the substrate holding device of Embodiment 5.

[0020] Figure 11 This is a flowchart illustrating the manufacturing process of the equipment.

[0021] Figure 12 This is a flowchart illustrating the wafer fabrication process.

[0022] Figure 13A as well as Figure 13B This is a diagram illustrating a pin chuck used in a typical substrate holding device. Detailed Implementation

[0023] Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. Furthermore, in the drawings, the same reference numerals are used to label the same parts or elements, and repeated descriptions are omitted or simplified.

[0024] (Example 1)

[0025] Figure 1 This is a structural diagram schematically illustrating the structure of the exposure apparatus 100 of Embodiment 1. The exposure apparatus 100 is a device that can harden a resist by irradiating it with light (exposure light) from a light source, thereby forming a pattern of a hardened material on which a pattern formed on an intermediate mask 104 has been transferred.

[0026] Furthermore, below, the direction parallel to the optical axis of the light irradiating the resist on the substrate 110 will be defined as the Z-axis direction, and two mutually orthogonal directions in a plane perpendicular to the Z-axis direction will be defined as the X-axis direction and the Y-axis direction. The exposure apparatus 100 of Embodiment 1 can be applied to apparatuses that sequentially focus and drive multiple pattern forming areas (exposure areas) and apparatuses that sequentially expose (projection exposure apparatus, substrate processing apparatus, etc.). Below, referring to… Figure 1 The exposure apparatus 100 of Embodiment 1 will be described below. Furthermore, the exposure apparatus 100 of Embodiment 1 will be described as an exposure apparatus employing a step-by-step repetition method.

[0027] The substrate (wafer) 110 is a processed substrate with a photosensitive agent (resist) coated on its surface, which effectively induces a chemical reaction upon exposure to light. The substrate 110 can be made of glass, ceramic, metal, silicon, resin, etc., and components made of materials different from the substrate 110 can be formed on its surface as needed. Furthermore, the substrate 110 can also be a gallium arsenide wafer, a composite bonded wafer, a glass wafer containing quartz, a liquid crystal panel substrate, an intermediate mask, or various other substrates. Moreover, its shape is not limited to circular; it can also be square, etc. In this case, the shape of the chuck 1, described later, only needs to be made to match the shape of the substrate.

[0028] An intermediate mask (original) 104 is placed on an intermediate mask stage 103, which is structured to be movable in a plane orthogonal to and along the optical axis of the projection optical system 106. The intermediate mask 104 has a rectangular outer perimeter and a patterned portion on a surface (patterned surface) facing the substrate 110. This patterned portion has a three-dimensionally formed pattern (such as a circuit pattern or other raised pattern to be transferred to the substrate). The intermediate mask 104 is made of a light-transmitting material, such as quartz.

[0029] The exposure apparatus 100 in Embodiment 1 also functions as a substrate processing apparatus, including a substrate holding apparatus 101, a substrate stage 102, an intermediate mask stage 103, an illumination optical system 105, a projection optical system 106, an off-axis mirror 107, a measuring unit 108, and a control unit 109.

[0030] The substrate holding device 101 includes a chuck 1 for adsorbing and holding the substrate 110, a suction unit (not shown) serving as a vacuum source for suction (venting) the space between the back side of the substrate 110 and the chuck 1, and a control unit (not shown) for controlling the suction unit. Details of the substrate holding device 101 in Embodiment 1 will be described later.

[0031] The substrate stage 102 includes an θZ tilting stage that holds the substrate 110 via a substrate holding device 101, an XY stage (not shown) that supports the θZ tilting stage, and a base (not shown) that supports the XY stage. The substrate stage 102 is driven by a drive device (not shown) such as a linear motor. The drive device can drive in six axes: X, Y, Z, θX, θY, and θZ, and is controlled by a control unit 109 described later. However, although the drive device can drive in six axes, it can also drive in any number of axes from one to six axes.

[0032] The intermediate mask stage 103 is configured to move, for example, in a plane perpendicular to the optical axis of the projection optical system 106 described later, i.e., in the XY plane, and to rotate in the θZ direction. The intermediate mask stage 103 is driven by a drive device (not shown) such as a linear motor, which can drive in the X, Y, and θZ axes and is controlled by the control unit 109 described later. Alternatively, the drive device can drive in three axes, but it can also drive in any number of axes from one to six axes.

[0033] The illumination optical system 105 includes a light source (not shown) to illuminate the intermediate mask 104, on which the circuit pattern (intermediate mask pattern) for transfer is formed. The light source included in the light source unit can be, for example, a laser. Usable lasers include ArF excimer lasers with a wavelength of approximately 193 nm, KrF excimer lasers with a wavelength of approximately 248 nm, and F2 excimer lasers with a wavelength of approximately 157 nm. Furthermore, the type of laser is not limited to excimer lasers; for example, YAG lasers can also be used, and the number of lasers is not limited. In addition, when using a laser in the light source unit, it is preferable to use a beam-shaping optical system that shapes the parallel beam from the laser source into a desired beam shape, or an incoherent optical system that decoheres coherent laser light. Furthermore, the usable light source is not limited to lasers; one or more mercury lamps, xenon lamps, etc., can also be used.

[0034] Furthermore, although the illumination optical system 105 is not shown, it includes lenses, mirrors, an optical integrator, and an aperture. Generally, the internal optical system is arranged in the order of condenser lens, fly-eye lens, aperture, condenser lens, slit, and imaging optical system. In this case, the optical integrator includes an integrator constructed by overlapping a fly-eye lens and two sets of cylindrical lens arrays.

[0035] The projection optical system 106 images the diffracted light from the pattern on the intermediate mask 104, illuminated by the exposure light from the illumination optical system 105, onto the substrate 110 at a predetermined magnification (e.g., 1 / 2, 1 / 4, or 1 / 5), causing interference. The interference image formed on the substrate 110 forms an image that is substantially identical to the intermediate mask pattern. This interference image is generally referred to as an optical image, and the linewidth formed on the substrate 110 determines the shape of the optical image. The projection optical system 106 may be an optical system consisting of only a few optical elements, or an optical system consisting of a few optical elements and at least one concave mirror (a catadioptric optical system). Alternatively, the projection optical system 106 may also be an optical system consisting of a few optical elements and at least one diffractive optical element such as a phase symmetry, or a total reflection mirror type optical system.

[0036] An off-axis mirror 107 is used for positioning the substrate 110 and detecting the positions of multiple patterned areas on the substrate 110. The relative positions of a reference mark disposed on the substrate stage 102 and a mark formed on the substrate 110 mounted on the substrate stage 102 can be detected and measured. The measuring unit (surface position measuring member) 108 is a measuring device capable of aligning the focus of the projection optical system 106 with the exposure target area of ​​the substrate 110, constituting a focusing device for aligning the focus of the projection optical system 106 with the substrate surface.

[0037] The control unit 109 includes a CPU, a memory (storage unit), etc., and is composed of at least one computer. It is connected to each component of the exposure apparatus 100 via circuitry. Furthermore, the control unit 109 controls the operation and adjustment of each component of the exposure apparatus 100 as a whole, according to a program stored in the memory. Additionally, the control unit 109 can be integrated with other parts of the exposure apparatus 100 (within a shared housing), or it can be separate from other parts of the exposure apparatus 100 (in a separate housing). It can also be located in a location different from the exposure apparatus 100 for remote control.

[0038] Here, the exposure sequence of the exposure apparatus 100 is explained as follows. Furthermore, the actions (processes) shown in this exposure sequence are controlled by a computer program executed by the control unit 109. When starting the exposure sequence, the exposure apparatus 100 begins to operate according to the exposure start command, starting from the state where the substrate 110 is automatically or manually set in the exposure apparatus 100 by the operator.

[0039] First, the first substrate 110 to be initially exposed is transported into the substrate carrier within the exposure apparatus 100 by a transport mechanism (not shown) (transportation process). Next, the substrate 110 is fed by the transport mechanism into the chuck 1 mounted on the substrate stage 102, where it is held and held by the substrate holding device 101 (substrate holding process).

[0040] Next, the off-axis mirror 107 mounted on the exposure apparatus 100 detects multiple marks formed on the substrate 110, determines the magnification, rotation, and deviation of the substrate 110 in the X and Y directions, and performs position correction (alignment process).

[0041] Next, the substrate stage 102 moves the substrate 110 so that the predetermined pattern forming area of ​​the substrate 110 to be initially exposed is aligned with the exposure position of the exposure apparatus 100. Then, after focusing by the measuring unit 108, light is irradiated from the light source, and the resist applied to the predetermined pattern forming area is exposed for a predetermined time (exposure process). The exposure time is, for example, approximately 0.2 seconds.

[0042] Next, the substrate stage 102 moves the substrate 110 to the next pattern forming area on the substrate 110 (step movement), and exposes it in the same way as described above. This pattern forming process is repeated until exposure is completed in all pattern forming areas that have been exposed. Thus, a pattern formed on the intermediate mask 104 can be formed on a single substrate 110. Furthermore, the substrate 110, transferred from the chuck 1 to a return transport hand (not shown), is returned to the substrate carrier within the exposure apparatus 100 (escape process). After the substrate 110 is escaped, it is processed, for example, by etching, to remove unwanted hardened material from the processed substrate 110, thereby enabling the manufacture of an article.

[0043] In Embodiment 1, as described above, an exposure apparatus using a step-by-step repetitive method is envisioned; however, it is not limited to this and can also be applied to a scanning exposure apparatus. In the case of a scanning exposure apparatus, the intermediate mask and the substrate 110 are scanned synchronously according to the exposure magnification, and exposure is performed during the scanning process.

[0044] Furthermore, the substrate holding device 101 of Embodiment 1 is not limited to use in the exposure apparatus 100. For example, it can also be used in substrate processing apparatuses including imprinting apparatuses (photolithography apparatuses), liquid crystal substrate manufacturing apparatuses, magnetic head manufacturing apparatuses, semiconductor inspection apparatuses, liquid crystal substrate inspection apparatuses, magnetic head inspection apparatuses, and the manufacture of micromachines.

[0045] Here, when the chuck 1 adsorbs and holds the substrate 110, there is a possibility that foreign objects may get trapped between the substrate 110 and the chuck 1. For example, even if the foreign object is only a few μm in size, if it gets trapped, the following may occur: the trapped portion of the substrate 110 may deform, a portion may bulge, resulting in poor pattern formation. As an example, this can happen when the effective focal depth is less than 1 μm.

[0046] To prevent foreign objects from being trapped, a so-called pin-contact chuck (hereinafter referred to as the chuck) is used, in which the portion abutting against the back of the substrate 110 is formed as a pin-shaped protrusion, thus significantly reducing the contact area with the substrate 110. Below, refer to... Figure 13A and Figure 13B The chuck used in conventional substrate holding devices will be described.

[0047] Figure 13A and Figure 13B This is a diagram illustrating a chuck 200 used in a typical substrate holding device. Figure 13A This is a top view of the chuck 200 from the +Z direction. Figure 13B yes Figure 13A A partial sectional view of the chuck 200 shown. Figure 13Aand Figure 13B The illustrated substrate holding device consists of a chuck 200, a protrusion 201, a partition (first partition) 204, and a suction port 205.

[0048] The protrusion 201 functions as an abutment surface (a support surface that supports the substrate after it is placed) that abuts against the back side of the substrate 110. The plurality of pin-shaped protrusions 201 include a plurality of pin-shaped protrusions (outer peripheral protrusions) 202, a plurality of pin-shaped protrusions (inner peripheral protrusions) 203, and a plurality of pin-shaped protrusions that are different from the outer peripheral protrusions 202 and the inner peripheral protrusions 203.

[0049] A partition wall 204 is annularly disposed at the bottom of the chuck 200, becoming the inner side compared to the outer peripheral protrusion 202. The height of the partition wall 204 is formed to be approximately 1 to 2 μm lower than the top surface of the outer peripheral protrusion 202. The suction port 205 is a through hole formed at the bottom of the chuck 200, connected to a flow path formed by piping or the like connected to a vacuum source (suction section) (not shown).

[0050] The peripheral protrusions 202 are disposed on the outer side compared to the partition wall 204 so as to abut against the back side of the substrate 110 in the peripheral direction. A plurality of peripheral protrusions 202 are disposed on the outer periphery with the same radius as the substrate 110. Figure 13A and Figure 13B The illustrated outer peripheral protrusion 202 is a protrusion disposed on the outermost peripheral side (outermost periphery) of the chuck 200. The inner peripheral protrusion 203 is disposed on the inner side compared to the partition wall 204 so as to abut against the back side of the substrate 110 in the inner peripheral direction. A plurality of inner peripheral protrusions 203 are disposed on the inner periphery with the same radius as the substrate 110. Figure 13A and Figure 13B The illustrated inner peripheral protrusion 203 is disposed adjacent to the outer peripheral protrusion 202, which is disposed at the bottom of the outermost peripheral side, separated by the partition wall 204. Furthermore, the plurality of pin-shaped protrusions 201 in the chuck 200 are arranged in a grid pattern at predetermined distances (intervals, periods, widths). Additionally, the outer peripheral protrusion 202 disposed on the outer side of the partition wall 204 and the inner peripheral protrusion 203 disposed on the inner side of the partition wall 204 and adjacent to the outer peripheral protrusion 202 separated by the partition wall 204 are each configured as a group. Moreover, the plurality of protrusions formed by the outer peripheral protrusion 202 and the inner peripheral protrusion 203 are composed of multiple groups, each comprising a group.

[0051] The method for adsorbing the substrate 110 using a chuck 200 configured as described above is explained below. First, the substrate 110 is placed on the protrusions 201 of the chuck 200. Thus, the back side of the substrate 110 abuts against the protrusions 201. Next, a vacuum source (not shown) is used to vacuum-attract the substrate 110 through the suction port 205. As a result, the substrate 110 is supported by the protrusions 201 of the chuck 200, adsorbed, and held. At this time, the substrate 110 deforms and flexes between the protrusions 201 due to the vacuum adsorption force. Because of this flexing, the flatness of the substrate 110 decreases, resulting in so-called wafer deformation (hereinafter referred to as deformation).

[0052] Will Figure 13B The configuration of the partition 204 is illustrated as an example, from a material mechanics model, referring to... Figure 2 The flatness of the substrate 110 in the peripheral side protrusion 202 and the amount of deformation are described below. Figure 2 This is a diagram illustrating a material mechanics model of a beam that is fixed on one side and free on the other side under uniformly distributed loads. Furthermore, the material mechanics model of the deflection state of the base plate 110 in the outer peripheral region (outer periphery) of the chuck 200 is applicable to... Figure 2 Example model. Additionally, as... Figure 13B As illustrated, the partition 204 is positioned closer to the outer peripheral convexity 202 than the inner peripheral convexity 203.

[0053] Let E be the Young's modulus of substrate 110 and h be the thickness of substrate 110. Next, let L be the distance between the outer peripheral protrusion 202 and the inner peripheral protrusion 203 included in each of the aforementioned multiple groups (hereinafter referred to as multiple groups). Furthermore, let w be the force per unit length, y be the deflection, and x be the radial position of the inner peripheral protrusion 203 reference. In this case, the tilt (θ)dy / dx is expressed by the following formula (1). Alternatively, the distance L can also be the average distance between the outer peripheral protrusion 202 and the inner peripheral protrusion 203 included in each of the multiple groups.

[0054]

[0055] The inclination dy / dx in the above formula (1) is maximized when x = L, and is represented by the following formula (2).

[0056]

[0057] Here, the negative sign in the above formula (2) indicates that the tilt dy / dx is the direction of counterclockwise rotation (CCW). In addition, if we assume that the suction pressure generated by the vacuum source is the suction pressure Pv and the depth dimension is b, then the force w per unit length is represented by the following formula (3).

[0058] w = Pvb (3)

[0059] Here, let the second moment of the cross section in a beam that is free on one side be E = 1 / 12bh. 3 If we substitute the above formula (3) into the above formula (2), we can obtain the following formula (4).

[0060]

[0061] Moreover, the deformation dx is represented by the following formula (5).

[0062]

[0063] Furthermore, strictly speaking, when the outer peripheral protrusion 202 applies a load to the substrate 110 by attraction or the like, due to the deformation of the substrate 110, the substrate 110 is not supported by the center portion (the support surface on the central axis of the outer peripheral protrusion 202), but by the corner portion offset from the center portion. Therefore, in this case, the aforementioned distance L (mm) is strictly speaking the distance from the corner portion of the outer peripheral protrusion 202 to the central axis of the inner peripheral protrusion 203 disposed next to the outer peripheral protrusion 203, with respect to the center direction of the substrate 110 of the outer peripheral protrusion 202. Because the longer the distance L is when calculating the aforementioned deformation, the greater the deformation, the aforementioned distance L is used for the calculation of deformation for safety reasons.

[0064] Here, as an example, according to the design values ​​of a typical chuck, if E = 160 GPa, Pv = 0.1 MPa, L = 2 mm, and h = 0.7 mm are substituted into the above formula (5), dx = 1.29 nm can be obtained. For example, if the allowable amount of superposition error relative to the ideal level is 1.5 nm, then the allowable amount is only 0.29 nm. Furthermore, even if the allowable amount of superposition error relative to the ideal level is, for example, 3 nm or 5 nm, a deformation of 1.29 nm has a significant impact when performing the process of forming a pattern on the substrate 110. Therefore, after adsorbing and holding the substrate 110, in order to perform processes such as pattern formation, it is necessary to adsorb and hold the substrate 110 in a state where the deformation is reduced.

[0065] Therefore, in Embodiment 1, a chuck is provided in which deformation is reduced by positioning the partition 5 in a predetermined relationship relative to the protrusion 2 described later. Referring hereafter... Figure 3A and Figure 3B , Figure 4A and Figure 4B as well as Figure 5 The substrate holding device 101 of Embodiment 1 will be described in detail.

[0066] Figure 3A and Figure 3B This is a diagram illustrating the substrate holding device 101 of Embodiment 1. Figure 3A This is a top view of the substrate holding device 101 viewed from the +Z direction. Figure 3B yes Figure 3A A partial cross-sectional view of the substrate holding device 101. Referring below... Figure 3A and Figure 3B The substrate holding device 101 of Embodiment 1 will be described in detail below. The substrate holding device 101 of Embodiment 1 includes a chuck 1, a suction part (not shown), and a control part.

[0067] The chuck 1 is circular with a diameter smaller than that of the substrate 110, and includes a plurality of pin-shaped protrusions 2, a partition (first partition) 5, and a suction port (first suction port) 6. In addition, the chuck 1 is disposed on the substrate stage 102.

[0068] The protrusions 2 are a plurality of pin-shaped protrusions (pins) disposed on the bottom of the chuck 1. When the substrate 110 is placed on the chuck 1, the back surface of the substrate 110 abuts against the top surface of the protrusions 2. The protrusions 2 are arranged in a grid pattern at a predetermined distance L (mm) on the bottom of the chuck 1. Although the diameter of the protrusions 2 varies depending on the specifications of the chuck 1, the typical diameter is about φ0.2mm. In addition to a grid pattern, the protrusions 2 can be arranged in concentric circles or at an angle, such as a grid pattern with 60-degree staggers. They can also be arranged randomly or in combination.

[0069] The protrusion 2 includes multiple pin-shaped protrusions (outer peripheral protrusions, first protrusions) 3 and multiple pin-shaped protrusions (inner peripheral protrusions, second protrusions) 4, as well as multiple pin-shaped protrusions (third protrusions) different from the outer peripheral protrusions 3 and the inner peripheral protrusions 4. The outer peripheral protrusions 3 are disposed on the outer side relative to the partition wall 5 so as to abut against the back side of the substrate 110 in the outer peripheral direction. The outer peripheral protrusions 3 are multiple protrusions disposed on the outer periphery with the same radius as the substrate 110. Figure 3A and Figure 3B The exemplified outer peripheral protrusion 3 is disposed on the outermost peripheral side (outermost periphery) of the chuck 1. The inner peripheral protrusion 4 is disposed on the inner side relative to the partition wall 5 so as to abut against the back side of the substrate 110 in the inner peripheral direction. A plurality of inner peripheral protrusions 4 are disposed on the inner periphery with the same radius as the substrate 110. Figure 3A and Figure 3BThe illustrated inner peripheral side protrusion 4 is disposed next to the outer peripheral side protrusion 3, which is disposed at the bottom of the outermost peripheral side, separated by the partition wall 5. In embodiment 1, the plurality of protrusions 2, excluding the third protrusion, are composed of a plurality of groups consisting of the outer peripheral side protrusion 3 disposed on the outer side of the partition wall 5 and the inner peripheral side protrusion 4 disposed on the inner side of the partition wall 5 and adjacent to the outer peripheral side protrusion 3 separated by the partition wall 5.

[0070] At least one partition wall 5 is arranged in a ring shape at the bottom of the chuck 1 to surround a portion of the plurality of protrusions 2. In Embodiment 1, the partition wall 5 is positioned near the inner peripheral protrusion 4 adjacent to the outer peripheral protrusion 3. The partition wall 5 is formed to be lower than the plurality of inner peripheral protrusions 4. The height of the plurality of inner peripheral protrusions 4 refers, for example, to the average height. Alternatively, the height of the partition wall 5 may be lower than the height of a specific inner peripheral protrusion 4, for example, the inner peripheral protrusion 4 with the lowest height among the plurality of inner peripheral protrusions 4. Alternatively, the height of the partition wall 5 may be formed to be about 1 to 2 μm lower than the top surface of the plurality of protrusions 2. Even if it is formed to be about 1 to 2 μm lower, the reduction in vacuum pressure when the substrate 110 is attracted to the back surface of the substrate 110 and the space (area) of the chuck 1 by the attraction part described later to adsorb and hold the substrate 110 is very small and will not be a problem. Furthermore, even if foreign objects such as debris or particles with a diameter of about 1 to 2 μm adhere to the partition wall 5, the probability of the adhered foreign objects contacting the back side of the substrate 110 is very low. Therefore, even if the height of the partition wall 5 is formed to be about 1 to 2 μm lower than the top surface of the plurality of protrusions 2, it will not be a problem.

[0071] The suction port 6 is a through hole formed on the chuck 1. In Embodiment 1, it functions as a suction port when suction (venting) is performed on the space between the back side of the substrate 110 and the chuck 1 by the suction section described later. Furthermore, the suction port 6... Figure 3A and Figure 3B Only one suction port 6 is set in the chuck 1, but it is not limited to this. More than one suction port 6 can also be formed on the chuck 1.

[0072] The suction unit is a vacuum source (not shown) configured to attract the space between the back side of the substrate 110 and the chuck 1 via vacuum suction or the like. The suction unit starts operating based on a signal from the control unit 109, and can attract the space between the back side of the substrate 110 and the chuck 1 via a flow path such as piping connected to the suction unit and the suction port 6, thus adsorbing the substrate 110 relative to the chuck 1. Furthermore, the suction unit is not limited to being disposed within the substrate holding device 101; it can also be disposed outside the substrate holding device 101 or outside the exposure apparatus 100.

[0073] Figure 4A and Figure 4B This is a diagram illustrating the material mechanics model at the configuration position of partition 5 in Example 1. Figure 4A This is a partial cross-sectional view of the substrate holding device 101 of Embodiment 1. Figure 4B This is an example Figure 4A A diagram of the material mechanics model in a partial cross-sectional view.

[0074] exist Figure 4B In the middle, because the inclined dy / dx is 0 (zero) at the inner circumferential convex part 4, this is approximately a fixed end. Additionally, in... Figure 4B In this configuration, the force generated by the vacuum pressure P acts as an evenly distributed load between the inner circumferential convex portion 4 and the partition wall 5. The force does not act on the outer circumferential convex portion 3, which is adjacent to the inner circumferential convex portion 4 via the partition wall 5. Therefore, because the tilting dy / dx becomes free at the outer circumferential convex portion 3, it is approximately at a free end. This is consistent with... Figure 2 Similarly, for a so-called statically indeterminate beam, by providing the condition that the displacement at the outer peripheral convex part 3 is 0, in addition to force balance and moment balance, it is possible to calculate the fixed-end reaction force Rf, the free-end reaction force Rp, and the moment Mf at the fixed end. Below, we will discuss the use of... Figure 4B The calculation of deformation in the substrate holding device 101 of Example 1, based on the material mechanics model, will be explained.

[0075] Let the deflection be y, and let the distance s be the distance from the inner peripheral convex portion 4, which is located adjacent to the outer peripheral convex portion 3 of each of the multiple groups and separated by the partition wall 5, to the partition wall 5. Next, let the distance between the outer peripheral convex portion 3 and the inner peripheral convex portion 4 of each of the multiple groups be the distance L. Alternatively, the distance L can be the average value of the distance between the outer peripheral convex portion 3 and the inner peripheral convex portion 4 of each of the multiple groups. In this case, the equation for deflection, using the above-mentioned Rf, Rp, and Mf, with 0 < x ≤ s, can be expressed by the following formula (6).

[0076]

[0077] Moreover, when s < x ≤ L, it can be represented by the following formula (7).

[0078]

[0079] Next, by integrating the above formula (7) and adding the condition dy / dx = 0 to the fixed end, we can obtain the following formula (8).

[0080]

[0081] Next, by integrating the above formula (7) and adding the condition that the tilted dy / dx is continuous at the configuration position of the neighboring 5, the following formula (9) can be obtained.

[0082]

[0083] Furthermore, if Rf and Mf are calculated from the aforementioned displacement balance, force balance, and moment balance, then using u = s / L as parameters, the following formulas (10) and (11) can be obtained.

[0084]

[0085]

[0086] Furthermore, if we set x = L, then the above formula (3) and the second moment of the cross section E = 1 / 12bh 3 Substituting into the above formula (9), we can obtain the following formula (12).

[0087]

[0088] Here, in the above formula (12), the tilt dy / dx is marked with clockwise rotation (CW) as + (positive). In addition, if counterclockwise rotation (CCW) is defined as + beforehand, then multiplying by -1 is the same. In addition, if the tilt dy / dx is multiplied by the thickness h / 2, the deformation dx can be obtained by the following formula (13).

[0089]

[0090] Next, u is determined based on the deformation dx obtained by the above formula (13) to satisfy the formula (14) shown below.

[0091]

[0092] The correction coefficient in the above formula (14) refers to the coefficient that takes into account the actual distance L. Although it varies depending on the configuration position of the convex part 2, it is a number close to 1.

[0093] Alternatively, when the flatness specification is set to dz, and the length of the portion protruding in the outward direction (outer direction) compared to the outer peripheral side protrusion 3 disposed on the outermost peripheral side of the substrate 110, i.e. the so-called overhang length, is set to oh, u can be determined to satisfy the following formula (15).

[0094]

[0095] Figure 5 This is a diagram illustrating the relationship between the deformation of Embodiment 1 and the configuration position of the partition wall 5. Figure 5The curve in the figure is the result of the correction factor × (h / 2) × PvL 3 / 4Eh 3 (3u 4 -4u 3 Substituting, for example, the design values ​​of a typical chuck 1: E = 160 GPa, Pv = 0.1 MPa, L = 2 mm, h = 0.7 mm, the calculated values ​​are used as the vertical axis. Additionally, u is used as a variable, and it is used as the horizontal axis.

[0096] according to Figure 5 If u is set to < 0.5, the maximum deformation dx can be only 0.4 nm, which can greatly reduce the impact of processes such as adsorption and holding of substrate 110 and forming patterns on substrate 110.

[0097] Furthermore, since the multiple protrusions 2 are actually arranged in two dimensions, the actual distance L between the protrusions 2, if including the reduction caused by the corner collisions of the protrusions, is substantially smaller than the distance L defined above (shorter distance). Therefore, if the distance L used in the deformation calculation is larger than the actual arrangement (longer distance), the deformation becomes larger. In Embodiment 1, for safety reasons, the deformation calculation uses the aforementioned distance L.

[0098] In Embodiment 1, by adjusting the arrangement of the partition 5 to satisfy u < 0.5 (the arrangement of the partition 5 relative to the protrusion 2 is in a predetermined relationship), deformation can be reduced. Therefore, a chuck can be provided that can optimally hold and retain the substrate 110 while performing processes such as pattern forming.

[0099] (Example 2)

[0100] The substrate holding device 101 of Embodiment 2 is a substrate holding device that also includes an auxiliary partition wall (second partition wall) 7, which is a partition wall (first partition wall) different from the partition wall (first partition wall) 5 in the chuck 1 of Embodiment 1, and a suction port (second suction port) 8, which is a suction port (second suction port) different from the suction port 6. That is, in the substrate holding device 101 of Embodiment 2, the first partition wall is configured to be composed of adjacent double-layer partition walls. In addition, in Embodiment 2, the outer partition wall of this double-layer partition wall is referred to as the auxiliary partition wall (second partition wall). Hereinafter, refer to Figure 6A and Figure 6B This describes the substrate holding device 101 of Embodiment 2. Figure 6A and Figure 6B This is a diagram illustrating the substrate holding device 101 of Embodiment 2. Figure 6A This is a top view of the substrate holding device 101 viewed from the +Z direction. Figure 6B yes Figure 6AA partial cross-sectional view of the substrate holding device 101. Furthermore, since the structure of the substrate holding device 101 in Embodiment 2 is the same as that in Embodiment 1, repeated descriptions are omitted.

[0101] The chuck 1 of Embodiment 2 is the same as that of Embodiment 1, including multiple pin-shaped protrusions 2, partitions 5, suction ports 6, and also includes auxiliary partitions 7 and suction ports 8.

[0102] An auxiliary partition 7 is disposed between the partition 5 and the outer peripheral protrusion 3 disposed next to the outer peripheral side of the partition 5. That is, it is disposed closer to the outer peripheral protrusion 3 than the inner peripheral protrusion 4. Furthermore, the placement of the auxiliary partition 7 is based on a comparison of the average positions of the protrusions 2 contained in the multiple groups shown in Embodiment 1 (hereinafter referred to as multiple groups). Preferably, the auxiliary partition 7 is disposed as close as possible to the outer peripheral protrusion 3 disposed next to the outer peripheral side of the partition 5 compared to the center position at a distance L. In Embodiment 2, the auxiliary partition 7 is configured such that u≈1. Additionally, the partition 5 is configured such that u<0.5, the same as in Embodiment 1. Furthermore, the height of the auxiliary partition 7 is formed to be lower than the height of the outer peripheral protrusion 3 contained in each of the multiple groups. The height of the outer peripheral protrusion 3 contained in each of the multiple groups refers, for example, to the average height. Alternatively, the height of the auxiliary partition 7 can be lower than the height of a specific peripheral lateral protrusion 3, for example, the lowest peripheral lateral protrusion 3 in each of a plurality of groups.

[0103] The suction port 8 has the same function as the suction port 6 in Embodiment 1 and is formed between the partition wall 5 and the auxiliary partition wall 7. Like the suction port 6 in Embodiment 1, the suction port 8 is connected to the suction section via a flow path such as a pipe. Furthermore, the suction section in the substrate holding device 101 of Embodiment 2 is equipped with valves (not shown) on the flow paths connecting the suction port 6 and the suction port 8 and the suction section, respectively, for opening and closing the flow paths used for suction. In Embodiment 2, the valve disposed between the suction port 6 and the suction section is designated as the first valve, and the valve disposed between the suction port 8 and the suction section is designated as the second valve.

[0104] In Embodiment 2, when the chuck 1 attracts and holds the substrate 110, attraction is performed through the suction port 6 and suction port 8. The attraction process of the substrate 110 in Embodiment 2 will now be described. Furthermore, the attraction process is controlled by a computer program executed by a control unit (not shown) of the substrate holding device 101.

[0105] First, a control unit (not shown) transmits an operation command to the suction unit, initiating suction (exhaust). Suction begins via the suction unit, and through suction ports 6 and 8, suction is applied to the back surface of the substrate 110 and the space of the chuck 1. As a result, the area inside the substrate 110 compared to the auxiliary partition 7 becomes the suction area, generating a greater suction force, allowing for the correction of even large warps on the substrate. Furthermore, deformation occurs at the moment when the warp of the substrate 110 is corrected and suction is complete.

[0106] Next, a control unit (not shown) controls the second valve to stop the suction in the area through suction port 8. This opens the space between partition wall 5 and auxiliary partition wall 7 to the atmosphere through suction port 8, causing the suctioned area to transition to the area through suction port 6, which is the area inside the substrate 110 compared to partition wall 5, thus reducing deformation. Furthermore, various controls during these suction processes can also be performed by the control unit 109.

[0107] Once the substrate 110 has been corrected, even if the attraction on the outer periphery (outer periphery) of the substrate 110 stops or the attraction decreases, the probability of it returning to its original state is low. Therefore, the deformation is kept small.

[0108] In Embodiment 2, as in Embodiment 1, deformation is reduced, and warping of the substrate 110 is also reduced. Therefore, a chuck can be provided that, based on processes such as pattern formation, can optimally hold and retain the substrate 110.

[0109] Furthermore, in some substrates 110 with large warpages, warpage often recovers when the suction port 8 is opened to the atmosphere. In this case, a negative pressure of approximately α × -1 (where α is an integer less than 1) can be applied from the suction unit through the suction port 8, depending on the warpage of the substrate 110. Alternatively, before suctioning the back surface of the substrate 110 and the space between the chuck 1 and the chuck, the pressure from the suction port 8 can be set to approximately -1, and the pressure from the suction port 8 can be set to α × -1 (where α is an integer less than 1). Thus, switching between correcting and reversing the substrate 110 is no longer necessary, and warpage does not recover.

[0110] (Example 3)

[0111] In embodiment 3, a chuck is provided in which deformation can be reduced by making the heights of the inner peripheral side protrusion 4 and the outer peripheral side protrusion 3 (described later) a predetermined relationship. Referring hereafter... Figures 7A to 9 The substrate holding device 101 of Embodiment 3 will be described in detail.

[0112] Figure 7A and Figure 7B This is a diagram illustrating the substrate holding device 101 of Embodiment 3. Figure 7A This is a top view of the substrate holding device 101 viewed from the +Z direction. Figure 7B yes Figure 7A A partial cross-sectional view of the substrate holding device 101. Referring below... Figure 7A and Figure 7B The substrate holding device 101 of Embodiment 3 will be described in detail. The substrate holding device 101 of Embodiment 3 includes a chuck 1, a suction part (not shown), and a control part.

[0113] The chuck 1 is circular with a diameter smaller than that of the substrate 110, and includes a plurality of pin-shaped protrusions 2, a partition (first partition) 5, and a suction port (first suction port) 6. In addition, the chuck 1 is disposed on the substrate stage 102.

[0114] The protrusions 2 are multiple pin-shaped protrusions disposed on the bottom of the chuck 1. When the substrate 110 is placed on the chuck 1, the back surface of the substrate 110 abuts against the top surface of the protrusions 2. The protrusions 2 are arranged in a grid pattern at a predetermined distance L (mm) on the bottom of the chuck 1. Although the diameter of the protrusions 2 varies depending on the specifications of the chuck 1, the typical diameter is about φ0.2mm. In addition to a grid pattern, the protrusions 2 can be arranged in concentric circles or at an angle, such as a grid pattern with 60-degree staggers. They can also be arranged randomly or in combination.

[0115] The protrusion 2 includes multiple pin-shaped protrusions (outer peripheral protrusions, first protrusions) 3 and multiple pin-shaped protrusions (inner peripheral protrusions, second protrusions) 4, as well as multiple pin-shaped protrusions (third protrusions) different from the outer peripheral protrusions 3 and the inner peripheral protrusions 4. The outer peripheral protrusions 3 are disposed on the outer side relative to the partition wall 5 so as to abut against the back side of the substrate 110 in the outer peripheral direction. The outer peripheral protrusions 3 are multiple protrusions disposed on the outer periphery with the same radius as the substrate 110. Figure 7A and Figure 7B The exemplified outer peripheral protrusion 3 is disposed on the outermost peripheral side (outermost periphery) of the chuck 1. The inner peripheral protrusion 4 is disposed on the inner side relative to the partition wall 5 so as to abut against the back side of the substrate 110 in the inner peripheral direction. A plurality of inner peripheral protrusions 4 are disposed on the inner periphery with the same radius as the substrate 110. Figure 7A and Figure 7BThe illustrated inner peripheral side protrusion 4 is positioned adjacent to the outer peripheral side protrusion 3, which is located at the bottom of the outermost peripheral side, separated by the partition wall 5. In embodiment 3, the plurality of protrusions 2, excluding the third protrusion, are composed of multiple groups consisting of the outer peripheral side protrusion 3 positioned on the outer side of the partition wall 5 and the inner peripheral side protrusion 4 positioned on the inner side of the partition wall 5 and adjacent to the outer peripheral side protrusion 3 separated by the partition wall 5. Although described later, the outer peripheral side protrusion 3 included in each of these multiple groups has a lower height than the inner peripheral side protrusion 4.

[0116] At least one partition 5 is arranged in a circular shape at the bottom of the chuck 1 to surround a portion of the plurality of protrusions 2. The suction port 6 is a through hole formed in the chuck 1, which, in embodiment 3, functions as a suction port when suction (venting) is applied to the space between the back side of the substrate 110 and the chuck 1 by the suction section described later. Furthermore, the suction port 6... Figure 7A and Figure 7B Only one suction port 6 is set in the chuck 1, but it is not limited to this. More than one suction port 6 can also be formed on the chuck 1.

[0117] The suction unit is a vacuum source (not shown) configured to attract the space between the back side of the substrate 110 and the chuck 1 via vacuum suction or the like. The suction unit starts operating based on a signal from the control unit 109, and can attract the space between the back side of the substrate 110 and the chuck 1 via a flow path such as piping connected to the suction unit and the suction port 6, thus adsorbing the substrate 110 relative to the chuck 1. Furthermore, the suction unit is not limited to being disposed within the substrate holding device 101; it can also be disposed outside the substrate holding device 101 or outside the exposure apparatus 100.

[0118] Next, let ho be the height of the outer peripheral convex portion 3 included in each of the aforementioned groups (hereinafter referred to as multiple groups). Furthermore, let hi be the height of the inner peripheral convex portion 4 included in each of the multiple groups, referring to... Figure 8 as well as Figure 9 The desired value of ho is explained below. Additionally, in Embodiment 3, ho is the average height of the outer peripheral convex portion 3 included in each of the multiple groups, and hi is the average height of the inner peripheral convex portion 4 included in each of the multiple groups. Figure 8 This is a diagram illustrating the material mechanics model of a cantilever beam in the case where the outer peripheral lateral protrusion 3 of Embodiment 3 has been removed. Figure 8 The model shown is a cantilever beam. Figure 9 This is a cross-sectional view of the chuck 1 of Example 3.

[0119] exist Figure 9 The middle part indicates that it has been removed. Figure 8 Model 2min of the substrate 110 with the outer peripheral side protrusion 3 as shown, and model 2j of the substrate 110 with ho = hi.

[0120] Here, let Figure 9 The flexural inclination of the exemplified flexural model is dy / dx, the flexural inclination is y, the radial position of the inner circumferential convex part 4 is x, and the distance between the outer circumferential convex part 3 and the inner circumferential convex part 4 contained in each of the multiple groups is L. Thus, the inclination dy / dx with respect to u = x / L can be represented by the following formula (16), and the flexural inclination y can be represented by the following formula (17).

[0121]

[0122]

[0123] Moreover, when u = 1, y max It can be represented by the following formula (18).

[0124]

[0125] The above formula (18) indicates that when ho is more than hi-(PvL) 4 ) / (Eh 3 When the substrate 110 is in contact with the support surface of the outer peripheral protrusion 3, the back side of the substrate 110 no longer contacts the support surface of the outer peripheral protrusion 3. Therefore, by satisfying the following formula (19), the tilt dy / dx can be reduced compared to when hi = ho, and the deformation can be reduced.

[0126]

[0127] Furthermore, the height of the partition wall 5 is lower than the inner peripheral side protrusion 4 included in each of the multiple groups, and is lower than the height of the outer peripheral side protrusion 3 included in each of the multiple groups. This is because if the partition wall 5 is higher than the outer peripheral side protrusion 3 included in each of the multiple groups, the partition wall 5 performs the same function as the outer peripheral side protrusion 3 included in each of the multiple groups. Additionally, the partition wall 5 is positioned closer to the outer peripheral side protrusion 3 included in each of the multiple groups than to the inner peripheral side protrusion 4 included in each of the multiple groups. This positioning of the partition wall 5 is based on a comparison of the average positions of the protrusions included in each of the multiple groups. Furthermore, it is preferable that the partition wall 5 is positioned as close as possible to the outer peripheral side protrusion 3 included in the multiple groups; in embodiment 3, the partition wall 5 is positioned such that u≈1.

[0128] In Example 3, the height of hi is set relative to ho to satisfy hi - ho < (PvL) 4 ) / (Eh 3 This reduces deformation. Therefore, a chuck can be provided that, based on processes such as pattern formation, can optimally hold and retain the substrate 110.

[0129] Additionally, for example, if Pv = 0.1013 MPa, L = 2 mm, and E = 160 GPa are substituted into the above formula (18), then when h = 0.7 mm, it becomes y max =44.3nm. In these cases, by designing the hi-ho to be smaller than, for example, around 45nm, deformation can be reduced.

[0130] (Example 4)

[0131] The substrate holding device 101 of Embodiment 4 is a substrate holding device in which the cross-sectional area of ​​the outer peripheral side protrusion 3 included in each of the plurality of groups shown in Embodiment 3 (hereinafter referred to as the plurality of groups) is smaller than the cross-sectional area of ​​the inner peripheral side protrusion 4 included in each of the plurality of groups. In addition, since the structure of the substrate holding device 101 is the same as that of the substrate holding device 101 of Embodiment 3, the repeated parts are omitted from the description.

[0132] In Example 4, assuming the cross-sectional area of ​​the outer peripheral protrusion 3 in each of the multiple groups is So, and the cross-sectional area of ​​the inner peripheral protrusion 4 in each of the multiple groups is Si, the outer peripheral protrusion 3 and the inner peripheral protrusion 4 are designed such that Si > So, and then processed. As a result, the processing resistance of the outer peripheral protrusion 3 is reduced during processing, making the processing of the protrusion easier. Furthermore, in Example 4, So is the average cross-sectional area of ​​the outer peripheral protrusion 3 in each of the multiple groups, and Si is the average cross-sectional area of ​​the inner peripheral protrusion 4 in each of the multiple groups.

[0133] Furthermore, by reducing processing resistance, the amount of removal of the outer peripheral protrusions 3 in each of the multiple groups increases, resulting in hi > ho. Furthermore, the vertical rigidity of the outer peripheral protrusions 3 in each of the multiple groups is less than the vertical rigidity of the inner peripheral protrusions 4 in each of the multiple groups. Therefore, when attracted by the suction part, the vertical compression of the substrate 110 increases, resulting in hi > ho. Additionally, processing of the protrusions 2 can be performed, for example, by grinding; however, it is not limited to this, and other methods can be used as long as the processing method can achieve Si > So.

[0134] In Embodiment 4, the outer peripheral side protrusions 3 and the inner peripheral side protrusions 4 of each of the multiple groups are processed to achieve Si > So. This aims to improve processing accuracy and shorten processing time. Furthermore, similar to Embodiment 3, a chuck can be provided that reduces deformation and, based on processing such as pattern formation, can optimally hold and hold the substrate 110.

[0135] (Example 5)

[0136] The substrate holding device 101 of Embodiment 5 is a substrate holding device that also includes an auxiliary partition wall (second partition wall) 7, which is a partition wall (first partition wall) different from the partition wall (first partition wall) 5 in the chuck 1 of Embodiment 3, and a suction port (second suction port) 8, which is a suction port (second suction port) different from the suction port 6. That is, in the substrate holding device 101 of Embodiment 5, the first partition wall is configured as a double-layered partition wall. In addition, in Embodiment 5, the outer partition wall of this double-layered partition wall is referred to as the auxiliary partition wall (second partition wall). Hereinafter, refer to Figure 10A and Figure 10B This describes the substrate holding device 101 of Embodiment 5. Figure 10A and Figure 10B This is a diagram illustrating the substrate holding device 101 of Embodiment 5. Figure 10A This is a top view of the substrate holding device 101 viewed from the +Z direction. Figure 10B yes Figure 10A A partial cross-sectional view of the substrate holding device 101. Furthermore, since the structure of the substrate holding device 101 in Embodiment 5 is the same as that in Embodiment 3, repeated descriptions are omitted.

[0137] The chuck 1 of Embodiment 5 is the same as that of Embodiment 3, including multiple pin-shaped protrusions 2, partitions 5, suction ports 6, and also includes auxiliary partitions 7 and suction ports 8.

[0138] An auxiliary partition 7 is disposed between the partition 5 and the inner peripheral side protrusion 4 disposed next to the inner peripheral side of the partition 5. Preferably, the auxiliary partition 7 is disposed closer to the inner peripheral side protrusion 4 disposed next to the inner peripheral side of the partition 5 than to the center position at a distance L. For example, it is configured to satisfy u < 0.5. In addition, the partition 5 is configured such that u ≈ 1, which is the same as in Embodiment 3.

[0139] The height of the auxiliary partition 7 is formed to be lower than the height of the inner peripheral side protrusions 4 included in each of the multiple groups. The height of the inner peripheral side protrusions 4 included in each of the multiple groups refers to, for example, the average height. Alternatively, the height of the auxiliary partition 7 may be lower than the height of a specific inner peripheral side protrusion 4, such as the inner peripheral side protrusion 4 with the lowest height among the inner peripheral side protrusions 4 included in each of the multiple groups. Alternatively, the height of the auxiliary partition 7 may be formed to be about 1 to 2 μm lower than the top surface of the multiple protrusions 2. Even if it is formed to be about 1 to 2 μm lower, the decrease in vacuum pressure when the substrate 110 is attracted and held in the space (area) between the back side of the substrate 110 and the chuck 1 by the suction part is very small due to the gap of about 1 to 2 μm, and it will not be a problem. In addition, even if foreign objects such as debris and particles with a diameter smaller than about 1 to 2 μm adhere to the auxiliary partition 7, the probability of the adhered foreign objects contacting the back side of the substrate 110 is very low. Therefore, even if the height of the auxiliary partition 7 is formed to be about 1 to 2 μm lower than the top surface of the plurality of protrusions 2, it will not be a problem.

[0140] The suction port 8 has the same function as the suction port 6 in Embodiment 3 and is formed between the partition wall 5 and the auxiliary partition wall 7. Like the suction port 6 in Embodiment 3, the suction port 8 is connected to the suction section via a flow path such as a pipe. Furthermore, the suction section in the substrate holding device 101 of Embodiment 5 is equipped with valves (not shown) on the flow paths connecting the suction port 6 and the suction port 8 and the suction section, respectively, for opening and closing the flow paths used for suction. In Embodiment 5, the valve disposed between the suction port 6 and the suction section is designated as the first valve, and the valve disposed between the suction port 8 and the suction section is designated as the second valve.

[0141] In Example 5, when the chuck 1 attracts and holds the substrate 110, attraction is performed through the suction port 6 and suction port 8. The attraction process of the substrate 110 in Example 5 will now be described. Furthermore, the attraction process is controlled by a computer program executed by a control unit (not shown) of the substrate holding device 101.

[0142] First, a control unit (not shown) transmits an operation command to the suction unit, initiating suction (exhaust). Suction begins via the suction unit, and through suction ports 6 and 8, suction is applied to the back surface of the substrate 110 and the space between the chuck 1 and the substrate. As a result, the area inside the substrate 110 compared to the partition wall 5 becomes the suction area, generating a greater suction force, allowing for the correction of even large warps on the substrate. Furthermore, at the moment when the warp of the substrate 110 is corrected and suction is complete, deformation occurs.

[0143] Next, a control unit (not shown) controls the second valve to stop the suction in the area through suction port 8. This opens the space between partition wall 5 and auxiliary partition wall 7 to the atmosphere through suction port 8, causing the suctioned area to transition to the area through suction port 6, which is the area inside the substrate 110 compared to the auxiliary partition wall 7, thus reducing deformation. Furthermore, various controls during these suction processes can also be performed by the control unit 109.

[0144] Once the substrate 110 has been corrected, even if the attraction on the outer periphery (outer periphery) of the substrate 110 stops or the attraction decreases, the probability of it returning to its original state is low. Therefore, the deformation is kept small.

[0145] In Embodiment 5, deformation is reduced in the same way as in Embodiment 3, and warpage of the substrate 110 is also reduced. Therefore, a chuck can be provided that can optimally hold and retain the substrate 110 while performing processes such as pattern formation.

[0146] Furthermore, in some substrates 110 with large warpages, warpage often recovers when the suction port 8 is opened to the atmosphere. In this case, a negative pressure of approximately α × -1 (where α is an integer less than 1) can be applied from the suction unit through the suction port 8, depending on the warpage of the substrate 110. Alternatively, before suctioning the back surface of the substrate 110 and the space between the chuck 1 and the chuck, the pressure from the suction port 8 can be set to approximately -1 (where α is an integer less than 1), and then to a negative pressure of α × -1 (where α is an integer less than 1). This eliminates the need to switch between correcting and reversing the substrate 110, and the warpage will not recover.

[0147] Alternatively, for example, at least two of the substrate holding devices 101 in the above embodiments can be combined. That is, it can also be made using... Figure 3A and Figure 3B , Figure 6A and Figure 6B , Figure 7A and Figure 7B as well as Figure 10A and Figure 10B The chuck 1 shown in the figure has at least two combined chuck base plate holding devices 101.

[0148] Furthermore, in the above embodiments, the protrusions 2 are arranged in a grid pattern at a predetermined distance on the bottom of the chuck 1; however, this is not a limitation. For example, the distance between the protrusions 2 can be arbitrarily set on both the inner and outer peripheral sides of the substrate 110. Moreover, the distance can be non-uniform instead of uniform.

[0149] Furthermore, the chuck 1 in the above embodiments is a vacuum adsorption chuck, but it is not limited to this. For example, it can also be an electrostatic chuck, or a chuck combining vacuum adsorption and electrostatic chuck methods, or other methods. In these cases, the vacuum pressure P in Embodiment 5 can simply be replaced by an adsorption force of other methods or by adding vacuum pressure to it.

[0150] Furthermore, while the chuck 1 in the above embodiments uses a pin chuck, it is not limited to this and can have other shapes. For example, it can be a so-called annular chuck that alternately forms concentric annular recesses as adsorption grooves and concentric annular protrusions as substrate support surfaces. In addition, the partitions are not limited to partition 5 and auxiliary partition 7; partitions other than partition 5 and auxiliary partition 7 can also be arranged on the chuck 1.

[0151] (Example of an article manufacturing method)

[0152] Next, an embodiment of the manufacturing method of the exposure apparatus 100 utilizing the above-described embodiments will be described. Figure 11 This describes the manufacturing process of microdevices (ICs, LSIs, and other semiconductor chips; LCD panels; CCDs; thin-film magnetic heads; micromachines, etc.). In step 1 (circuit design), the pattern design of the device is performed.

[0153] In step 2 (mask fabrication), a mask (mold, die) is made to form the designed pattern. Meanwhile, in step 3 (wafer manufacturing), a wafer (substrate) is manufactured using materials such as silicon and glass. Step 4 (wafer processing), known as the front-end process, uses the prepared mask and wafer to form the actual circuitry on the wafer through photolithography.

[0154] The next step, 5 (assembly), is called the post-processing stage. It involves using the wafers created in step 4 to form semiconductor chips, including assembly processes (dicing, bonding), packaging processes (chip encapsulation), etc. In step 6 (inspection), operational verification tests and durability tests are performed on the semiconductor equipment created in step 5. After these processes, the semiconductor equipment is completed and shipped (step 7).

[0155] Figure 12This describes the detailed process flow of the wafer fabrication process described above. In step 11 (oxidation), the surface of the wafer is oxidized. In step 12 (CVD), an insulating film is formed on the wafer surface. In step 13 (electrode formation), electrodes are formed on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. In step 15 (resist treatment), a photoresist is applied to the wafer. In step 16 (exposure), the circuit pattern of the mask is arranged on multiple patterning areas of the wafer using the projection exposure apparatus described above, and the image is exposed. In step 17 (development), the exposed wafer is developed. In step 18 (etching), the portion outside the developed photoresist image is removed. In step 19 (photoresist stripping), excess photoresist after etching is removed. By repeating these steps, a multilayer circuit pattern is formed on the wafer.

[0156] Thus, according to the manufacturing method of the device using the chuck 1 of this embodiment, because the twisting and warping of the substrate are suppressed, the accuracy and yield of the device are improved. As a result, it is possible to reliably manufacture highly integrated devices that were previously difficult to manufacture at low cost.

[0157] The present invention has been described in detail above according to its suitable embodiments. However, the present invention is not limited to the invention described above. Various modifications can be made according to the spirit of the present invention, and these modifications are not excluded from the scope of the present invention.

[0158] Alternatively, a computer program that implements some or all of the functions of the above embodiments can be supplied to the substrate holding device 101, substrate processing device, etc., via a network or various storage media. Furthermore, the program can be read and executed by a computer (or CPU, MPU, etc.) in the substrate holding device 101 or substrate processing device. In this case, the program and the storage medium storing the program constitute the present invention.

[0159] While the invention has been described with reference to exemplary embodiments, it should be understood that the invention is not limited to the disclosed exemplary embodiments. The scope of the appended claims is the broadest interpretation to encompass all such modifications and equivalent structures and functions.

[0160] This application claims the benefits of Japanese Patent Application No. 2021-032662, filed on March 2, 2021, and Japanese Patent Application No. 2021-124135, filed on July 29, 2021, which are incorporated herein by reference in their entirety.

Claims

1. A chuck for adsorbing and holding a substrate, characterized in that, The aforementioned chucks include: Multiple protrusions that abut against the back side of the aforementioned substrate that is adsorbed and held; Annular septum; Auxiliary partition; and The bottom of the aforementioned multiple protrusions, partitions, and auxiliary partitions is configured. The aforementioned plurality of protrusions are composed of a first protrusion disposed on the outer side of the partition wall and a second protrusion disposed on the inner side of the partition wall and adjacent to the first protrusion across the partition wall, forming a plurality of groups. Let L be the distance between the first protrusion and the second protrusion in each of the aforementioned groups, and let s be the distance between the second protrusion and the partition wall, then the following conditions are met. s / L < 0.5, The auxiliary partition is disposed between the partition and the first protrusion, and is positioned closer to the first protrusion than the second protrusion. Let the height of the first protrusion in each of the aforementioned groups be ho, and let the height of the second protrusion in each of the aforementioned groups be hi, then the following conditions are met. hi>ho.

2. The chuck as described in claim 1, characterized in that, The aforementioned partition is lower in height than the aforementioned second protrusion contained in each of the aforementioned groups.

3. The chuck as described in claim 1, characterized in that, The height of the aforementioned auxiliary partition is lower than the first protrusion contained in each of the aforementioned groups.

4. The chuck as described in claim 1, characterized in that, The bottom has a first suction port for suctioning the inner circumferential side of the partition wall.

5. The chuck as described in claim 1, characterized in that, The bottom is provided with a second suction port for attracting between the partition wall and the auxiliary partition wall.

6. The chuck as described in claim 1, characterized in that, The diameter of the aforementioned partition is smaller than the diameter of the aforementioned substrate.

7. The chuck as described in claim 1, characterized in that, The chuck described above has a third protrusion, which is different from the aforementioned protrusions.

8. The chuck as described in claim 1, characterized in that, The first protrusion included in each of the plurality of groups is the protrusion disposed on the outermost peripheral side within the plurality of protrusions disposed at the bottom.

9. The chuck as described in claim 1, characterized in that, The height of the aforementioned partition is below the height of the aforementioned second protrusion contained in each of the aforementioned groups.

10. The chuck as claimed in claim 1, characterized in that, Let So be the cross-sectional area of ​​the first protrusion included in each of the aforementioned multiple groups, and let Si be the cross-sectional area of ​​the second protrusion included in each of the aforementioned multiple groups, then the following conditions are met: Si > So.

11. The chuck as claimed in claim 1, characterized in that, The aforementioned partition is positioned closer to the aforementioned first protrusion in each of the aforementioned groups than to the aforementioned second protrusion in each of the aforementioned groups.

12. A substrate holding device, comprising the chuck of claim 1 for adsorbing and holding the substrate, characterized in that, Let dx represent the torsion of the substrate, E be the Young's modulus of the substrate, h be the thickness of the substrate, Pv be the attractive force relative to the substrate, and u = s / L. The above-mentioned partition configuration location meets the requirements. dx < correction factor × (h / 2) × (PvL) 3 / 4Eh 3 )×(3u 4 -4u 3 ).

13. The substrate holding device as claimed in claim 12, characterized in that, Let the flatness of the substrate be dz, and the size of the substrate protruding outward compared to the first protrusion disposed on the outermost periphery be oh. The above-mentioned partition configuration location meets the requirements. dz < correction factor × oh × (PvL) 3 / 4Eh 3 )×(3u 4 -4u 3 ).

14. The substrate holding device as claimed in claim 12, characterized in that, The aforementioned substrate holding device includes a valve for opening and closing a flow path for drawing in the inner peripheral side of the aforementioned partition wall, and a control unit for controlling the aforementioned valve.

15. A substrate processing apparatus, characterized in that, The substrate adsorbed and held by the substrate holding device according to claim 12 is subjected to a pattern forming process.

16. A method for manufacturing a semiconductor device, characterized in that, include: A pattern forming process for forming a pattern on a substrate using the substrate processing apparatus according to claim 15; A processing step for processing the substrate on which the pattern has been formed in the above-mentioned pattern forming process; and The process of manufacturing semiconductor equipment from the substrate processed in the above-mentioned processing steps.

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