Cmos image sensor and method of forming the same
By introducing BDTI and PDTI structures into CMOS image sensors, the crosstalk problem between adjacent pixels is solved, achieving a balance between low crosstalk and high quantum efficiency, thus improving the performance of image sensors.
CN115000100BActive Publication Date: 2026-07-21TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
- Filing Date
- 2022-02-16
- Publication Date
- 2026-07-21
Smart Images
Figure CN115000100B_ABST
Abstract
Some embodiments relate to a CMOS image sensor arranged on a substrate. A plurality of pixel regions includes a plurality of photodiodes respectively configured to receive radiation entering the substrate from the backside. A boundary deep trench isolation (BDTI) structure is arranged at a boundary region of the pixel regions and includes a first set of BDTI segments extending in a first direction and a second set of BDTI segments extending in a second direction perpendicular to the first direction to laterally surround the photodiodes. The BDTI structure includes a first material. A pixel deep trench isolation (PDTI) structure is disposed within the BDTI structure and overlies the photodiodes. The PDTI structure includes a second material different from the first material and includes a first PDTI segment extending in the first direction such that the first PDTI segment is surrounded by the BDTI structure. Embodiments of the present application also relate to methods of forming a CMOS image sensor.
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