LED Encapsulation Device and Its Encapsulation Method

Abstract

The present invention discloses an LED packaging device, which includes a substrate and an LED chip disposed on the substrate. A sealing glue layer is provided on the substrate, and the sealing glue layer covers the LED chip; the LED packaging device further includes a transparent groove, a quantum dot layer is provided inside the transparent groove, a barrier film layer is further provided on the quantum dot layer, and the peripheral wall of the barrier film layer is hermetically and fixedly connected to the side wall of the transparent groove; a phosphor layer is further provided in the transparent groove, and the phosphor layer is located above the barrier film layer; the transparent groove is inverted on the sealing glue layer and connected to the sealing glue layer, and the sealing glue layer closes the opening of the transparent groove to cover the quantum dot layer, the barrier film layer and the phosphor layer. By setting the transparent groove and arranging the quantum dot layer in the transparent groove, and sealing the quantum dot layer through the hermetic and fixed connection between the peripheral wall of the barrier film layer and the side wall of the transparent groove, the LED packaging device of the present invention isolates water vapor and oxygen, effectively avoiding the failure problem of the quantum dot layer.

Description

Technical Field

[0001] The present invention belongs to liquid crystal displays, and particularly relates to an LED packaging device and a packaging method thereof. Background Art

[0002] In existing liquid crystal displays (LCDs), a backlight system is required to provide a uniform surface light source. In order to improve the color gamut of LCD displays, the common practice is to minimize the full width at half maximum (FWHM) of the emission spectra of green and red lights in the backlight. Quantum dot (QD) light-emitting materials well meet the requirements of the LCD system for the display color gamut. However, quantum dots have the following disadvantages: 1. Oxygen can cause the quantum dot material to fail and stop emitting light; 2. Water vapor can cause the quantum dot material to fail and stop emitting light; 3. A very strong excitation light source energy density (usually blue light) can cause the quantum dot material to fail and stop emitting light. Based on these three disadvantages of quantum dot materials, the current product application of quantum dots in the LCD backlight system is mainly quantum dot films. As Figure 1 shown, the quantum dot film 10a is a product with a "sandwich" structure. The quantum dot material layer 1a is wrapped in the middle by barrier films 2a of two PET substrates on the upper and lower sides. The function of the barrier films 2a is to prevent water vapor and oxygen from entering the quantum dot material layer from the upper and lower surfaces. After the quantum dot material layer 1a is encapsulated through the "sandwich" structure, it is placed in an LED device to form a QD-LED packaging device 20a, and the specific structure is as Figure 2 shown. An LED chip 4a is installed on a substrate 3a, and the LED chip 4a is encapsulated through a packaging glue layer 5a. Then, the quantum dot film 10a is installed on the packaging glue layer, and the side walls of the quantum dot film 10a on the packaging glue layer 5a are encapsulated through a barrier wall 6a. However, since the connection between the barrier wall 6a and the quantum dot film 10a is not a sealed connection, water vapor and oxygen can still enter from the connection between the barrier wall 6a and the quantum dot film 10a, as shown by arrow A and arrow B. Therefore, the quantum dot material layer 1a still has a problem of failure edges. As Figure 3 shown, water vapor and oxygen enter the quantum dot material layer 1a from the side. Usually, the size of the failure edge C is about 1 mm, and the size of a general LED device is also 1 - 2 mm. Therefore, the service life of this QD-LED packaging device 20a is short and it is not suitable for use in liquid crystal displays. At the same time, the quantum dot material layer 1a is in direct close contact with the blue light LED chip 4a and directly receives the blue light emitted by the blue light LED chip 4a. The blue light LED chip 4a emits light unevenly, and the local blue light energy density is very high, so the quantum dot material is prone to failure. Summary of the Invention

[0003] The object of the present invention is to provide an LED packaging device capable of isolating water vapor and oxygen and its packaging method, which effectively avoids the failure problem of the quantum dot layer and reduces the failure risk caused by strong blue light to the quantum dot material.

[0004] To achieve the above object, an LED packaging device provided by the present invention includes a substrate and an LED chip disposed on the substrate. A sealing glue layer is provided on the substrate, and the sealing glue layer covers the LED chip; the LED packaging device further includes a transparent groove, a quantum dot layer is provided inside the transparent groove, a barrier film layer is further provided on the quantum dot layer, and the peripheral wall of the barrier film layer is hermetically and fixedly connected to the side wall of the transparent groove; a phosphor layer is further provided on the barrier film layer, and the phosphor layer is located above the barrier film layer; the transparent groove is inverted on the sealing glue layer and connected to the sealing glue layer, and the sealing glue layer closes the opening of the transparent groove to cover the quantum dot layer, the barrier film layer and the phosphor layer.

[0005] Preferably, one side of the phosphor layer is connected to the barrier film layer, and the other side of the phosphor layer is connected to the sealing glue layer.

[0006] The present invention also provides a packaging method for an LED packaging device. The packaging method includes the following steps: providing a substrate with an LED chip disposed thereon; providing a transparent groove, a quantum dot layer is provided inside the transparent groove, a barrier film layer is further provided on the quantum dot layer, the peripheral wall of the barrier film layer is hermetically and fixedly connected to the side wall of the transparent groove, and a phosphor layer is further provided inside the transparent groove, and the phosphor layer is located above the barrier film layer; coating a packaging glue on the substrate, and the packaging glue covers the LED chip; inverting the transparent groove on the packaging glue and curing the packaging glue to form a sealing glue layer connecting the substrate and the transparent groove, and the sealing glue layer closes the opening of the transparent groove to cover the quantum dot layer, the barrier film layer and the phosphor layer.

[0007] Preferably, the step of providing a transparent groove with a quantum dot layer provided inside includes: dotting a mixture of quantum dots and glue on the bottom of the transparent groove through a dispensing process to form the quantum dot layer.

[0008] Preferably, the step of further providing a barrier film layer on the quantum dot layer and hermetically and fixedly connecting the peripheral wall of the barrier film layer to the side wall of the transparent groove includes: forming the barrier film layer on the quantum dot layer and the side wall of the transparent groove through an evaporation process or a magnetron sputtering process so that the peripheral wall of the barrier film layer is hermetically and fixedly connected to the side wall of the transparent groove.

[0009] Preferably, the material of the barrier film layer is silicon oxide.

[0010] Preferably, one side of the phosphor layer is connected to the barrier film layer, and the other side of the phosphor layer is connected to the encapsulant layer.

[0011] Preferably, the phosphor layer is formed by a dispensing process.

[0012] Preferably, the LED chip is a blue LED chip, the phosphor layer is a red phosphor layer, and the quantum dot layer is a green quantum dot layer.

[0013] Preferably, the transparent groove is made of glass.

[0014] Compared with the prior art, the LED packaging device of the present invention seals the quantum dot layer by setting a transparent groove and arranging a quantum dot layer in the transparent groove, and sealingly fixing and connecting the peripheral wall of the barrier film layer with the side wall of the transparent groove, thereby isolating water vapor and oxygen, effectively avoiding the failure problem of the quantum dot layer. At the same time, by setting the phosphor layer, part of the light emitted by the LED chip is first absorbed, and after reducing the energy density of the light emitted by the LED chip, the remaining light emitted by the LED chip enters the quantum dot layer, reducing the possibility of failure of the quantum dot material under strong light radiation. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 FIG. is a schematic structural diagram of a quantum dot film in the prior art.

[0016] Figure 2 FIG. is a schematic structural diagram of installing a quantum dot film in an LED device in the prior art.

[0017] Figure 3 is Figure 2 a schematic structural diagram of the quantum dot film in the LED device in FIG. after failure.

[0018] Figure 4 FIG. is a schematic structural diagram of the LED packaging device according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0019] In order to explain in detail the technical content, structural features, and achieved effects of the present invention, the following is described in detail in conjunction with the embodiments and accompanied by the drawings.

[0020] As Figure 4As shown in the figure, an embodiment of the present invention provides an LED packaging device, including a substrate 1 and an LED chip 2 disposed on the substrate 1. A sealing glue layer 3 is provided on the substrate 1, and the sealing glue layer 3 covers the LED chip 2; the LED packaging device further includes a transparent groove 4, a quantum dot layer 5 is provided inside the transparent groove 4, and a barrier film layer 6 is further provided on the quantum dot layer 5. The peripheral wall of the barrier film layer 6 is hermetically and fixedly connected to the side wall of the transparent groove 4; a phosphor layer 7 is further provided in the transparent groove 4, and the phosphor layer 7 is located above the barrier film layer 6; the transparent groove 4 is inverted on the sealing glue layer 3 and connected to the sealing glue layer 3, and the sealing glue layer 3 closes the opening of the transparent groove 4 to cover the quantum dot layer 5, the barrier film layer 6 and the phosphor layer 7.

[0021] Specifically, the transparent groove 4 is made of an integral structure of glass material, with only an upper opening, and water vapor and oxygen cannot enter the inside of the transparent groove 4 from other parts of the transparent groove 4. The quantum dot layer 5 is provided at the bottom of the transparent groove 4, and the barrier film layer 6 is provided on the quantum dot layer 5 and the peripheral wall of the barrier film layer 6 is hermetically and fixedly connected to the side wall of the transparent groove 4. Therefore, the quantum dot layer 5 is sealed in the space formed by the transparent groove 4 and the barrier film layer 6, which can effectively isolate water vapor and oxygen and avoid the failure problem of the quantum dot material in the quantum dot layer 5.

[0022] In the LED packaging device of the embodiment of the present invention, by providing the transparent groove 4 and arranging the quantum dot layer 5 in the transparent groove 4, and sealing the quantum dot layer 5 through the hermetic and fixed connection between the peripheral wall of the barrier film layer 6 and the side wall of the transparent groove 4, water vapor and oxygen are isolated, effectively avoiding the failure problem of the quantum dot layer 5. It is a novel structure of the LED packaging device. At the same time, by providing the phosphor layer 7, part of the light emitted by the LED chip 2 is first absorbed, and after reducing the energy density of the light emitted by the LED chip 2, the remaining part of the light emitted by the LED enters the quantum dot layer 5, reducing the possibility of the quantum dot material failing under strong light radiation.

[0023] In the embodiment of the present invention, as Figure 4 shown, one side of the phosphor layer 7 is connected to the barrier film layer 6, and the other side of the phosphor layer 7 is connected to the sealing glue layer 3. By arranging the phosphor layer 7 between the barrier film layer 6 and the sealing glue layer 3, not only can the problem of uneven light emission of the LED chip 2 be solved, but also the distance between the LED chip 2 and the quantum dot layer 5 can be increased, avoiding the problem that the energy of the LED chip 2 is too high and causing the quantum dot material in the quantum dot layer 5 to fail.

[0024] Specifically, the phosphor layer 7 is a red phosphor layer, the barrier film layer 6 is made of silicon oxide material, the LED chip 2 is a blue LED chip, the quantum dot layer 5 is a green quantum dot layer, and the transparent groove 4 is combined with the LED chip 2 and the substrate 1 through the sealing layer 3 to form a white light LED package device. The blue light emitted by the LED chip 2 in the LED package device of the embodiment of the present invention first enters the red phosphor layer, and part of the blue light is absorbed by the red phosphor in the red phosphor layer and converted into red light, so that the energy density of the blue light is attenuated. Secondly, the red phosphor particles have a light diffusion effect, which can adjust the uneven blue light distribution to a uniform blue light distribution. After energy attenuation and uniform diffusion, the blue light then enters the quantum dot layer 5 through the barrier film layer 6, and part of the blue light is absorbed by the quantum dot material in the quantum dot layer 5 and converted into green light. Among them, the thickness of the red phosphor layer 7 and the particles of the red phosphor can be adjusted according to actual needs. In this embodiment, the red phosphor layer can absorb about one-third of the blue light and convert it into red light, and the concentration of the quantum dot material in the green quantum dot layer is also adjustable. In this embodiment, the green quantum dot layer absorbs one-third of the blue light and converts it into green light. At this point, the red light generated by the red phosphor, the green light generated by the quantum dot material, and the remaining one-third of the blue light are mixed together to form white light, thereby forming a white light LED package device. By providing the phosphor layer 7, part of the blue light of the LED chip 2 is first absorbed to reduce the energy density of the blue light of the LED chip 2 before the blue light enters the quantum dot layer 5, thereby reducing the possibility of failure of the quantum dot material under strong blue light radiation.

[0025] In an embodiment of the present invention, the phosphor layer 7 can also be a phosphor layer of other colors, such as an orange phosphor layer, and the quantum dot layer 5 can also be a quantum dot layer 5 having quantum dot materials of other colors. The luminous color of the LED chip 2 is not limited and can be adjusted according to the luminous color required by the LED packaging device.

[0026] In the LED packaging device of the embodiment of the present invention, Figure 4 As shown, a diffusion layer can be further provided between the barrier film layer 6 and the phosphor layer 7 to further increase the uniformity of the light emitted by the LED chip 2. Of course, other functional layers can also be added between the barrier film layer 6 and the phosphor layer 7 or between the phosphor layer 7 and the sealing layer 3, and there is no limitation here.

[0027] like Figure 4 As shown, an embodiment of the present invention further provides a packaging method for an LED packaging device, the packaging method comprising the following steps:

[0028] S1. Provide a substrate 1 on which an LED chip 2 is disposed.

[0029] S2. Provide a transparent groove 4, in which a quantum dot layer 5 is provided. A barrier film layer 6 is further provided on the quantum dot layer 5. The peripheral wall of the barrier film layer 6 is hermetically and fixedly connected to the side wall of the transparent groove 4. A phosphor layer 7 is further provided in the transparent groove 4, and the phosphor layer 7 is located above the barrier film layer 6.

[0030] S3. Coat encapsulation glue on the substrate 1, and the encapsulation glue covers the LED chip 2.

[0031] S4. Invert the transparent groove 4 onto the encapsulation glue and cure the encapsulation glue to form a sealing glue layer 3 connecting the substrate 1 and the transparent groove 4. The sealing glue layer 3 closes the opening of the transparent groove 4 to cover the quantum dot layer 5, the barrier film layer 6 and the phosphor layer 7.

[0032] In the encapsulation method of the LED encapsulation device according to the embodiment of the present invention, by providing the transparent groove 4 and arranging the quantum dot layer in the transparent groove 4, and hermetically sealing the quantum dot layer 5 by fixedly connecting the peripheral wall of the barrier film layer 6 to the side wall of the transparent groove 4, moisture and oxygen are isolated, effectively avoiding the failure problem of the quantum dot layer 5. It is a new encapsulation method for LED encapsulation devices. By providing the phosphor layer 7, part of the light emitted by the LED chip 2 is first absorbed. After reducing the energy density of the light emitted by the LED chip 2, the remaining part of the light emitted by the LED enters the quantum dot layer 5, reducing the possibility of the quantum dot material failing under strong light radiation.

[0033] As Figure 4 shown, in the embodiment of the present invention, in step S2, a transparent groove 4 is provided, in which a quantum dot layer 5 is provided. A barrier film layer 6 is further provided on the quantum dot layer 5. The step of hermetically and fixedly connecting the peripheral wall of the barrier film layer 6 to the side wall of the transparent groove 4 includes the following steps:

[0034] S21. Dot a mixture of quantum dot material and glue on the bottom of the transparent groove 4 through a dispensing process to form the quantum dot layer 5. The mixture of quantum dot material and glue is laid flat on the bottom of the transparent groove 4, and the mixture of quantum dot material and glue is dried and cured to form the quantum dot layer 5. The peripheral wall of the quantum dot layer 5 is connected to the inner wall of the glass groove;

[0035] S22. The barrier film layer 6 is formed on the sidewalls of the quantum dot layer 5 and the transparent groove 4 through an evaporation process or a magnetron sputtering process, so that the peripheral wall of the barrier film layer 6 is hermetically and fixedly connected to the sidewall of the transparent groove 4. Specifically, the barrier film layer 6 is disposed on the upper surface of the quantum dot layer 5, and the material of the barrier film layer 6 is silicon oxide. Since the barrier film layer 6 is formed through an evaporation process or a magnetron sputtering process, it can form a hermetic and fixed connection with the sidewall of the transparent groove 4, thereby effectively isolating water vapor and oxygen and avoiding the failure problem of the quantum dot layer 5.

[0036] In an embodiment of the present invention, as Figure 4 shown, one side of the phosphor layer 7 is connected to the barrier film layer 6, and the other side of the phosphor layer 7 is connected to the encapsulant layer 3.

[0037] Specifically, the phosphor layer 7 is formed by a dispensing process. By providing the phosphor layer 7 between the barrier film layer 6 and the encapsulant layer 3, on the one hand, the problem of uneven light emission of the LED chip 2 can be solved, and on the other hand, the distance between the LED chip 2 and the quantum dot layer 5 can be increased, avoiding the problem that the energy of the LED chip 2 is too high and causing the failure of the quantum dot material in the quantum dot layer 5.

[0038] In an embodiment of the present invention, the LED chip 2 is a blue LED chip 2, the phosphor layer 7 is a red phosphor layer, the quantum dot layer 5 is a green quantum dot layer, and the transparent groove 4 is combined with the LED chip 2 and the substrate 1 through the encapsulant layer 3 to form a white LED packaging device. At the same time, by providing the phosphor layer 7, part of the blue light of the LED chip 2 is first absorbed, and after reducing the energy density of the blue light of the LED chip 2, the blue light then enters the quantum dot layer 5, reducing the possibility of failure of the quantum dot material under strong blue light radiation.

[0039] In an embodiment of the present invention, the material of the transparent groove 4 is glass, and the manufacturing process of the transparent groove 4 is to first make a mask corresponding to the transparent groove 4 on the surface of a piece of glass, and then make a groove through chemical etching. The material of the transparent groove 4 can also be other transparent materials, as long as it can ensure sealing and a barrier film layer can be formed on its sidewall through an evaporation process or a magnetron sputtering process.

[0040] In an embodiment of the present invention, the sidewall of the transparent groove 4 and the barrier film layer 6 on the surface of the quantum dot layer 5 form a sealed cavity, and the quantum dot material is inside this cavity. Since glass itself is an excellent material for isolating water vapor and oxygen, the cavity formed by the glass material transparent groove 4 and the barrier film layer 6 can well protect the quantum dot material from the intrusion of water vapor and oxygen, and there will be no problem of a failure edge like the "sandwich" structure in the prior art.

[0041] Compared with the prior art, since a barrier film layer 6 and a phosphor layer 7 are arranged between the quantum dot layer 5 and the LED chip 2, the quantum dot material in the quantum dot layer 5 does not directly contact the LED chip 2 at a close distance, and does not directly receive the high-energy-density blue light emitted by the LED chip 2. Therefore, the problem of strong blue light irradiating the quantum dot material and causing the quantum dot material to fail can be avoided. As for the red light phosphor, it can directly contact the LED chip 2, receive the blue light directly emitted by the LED, and is insensitive to water vapor and oxygen. Ordinary packaging glue can protect it well, that is, the sealing layer 3 can use ordinary packaging glue, such as epoxy resin or silicone.

[0042] The above disclosure is only a preferred embodiment of the present invention, and certainly cannot be used to limit the scope of rights of the present invention. Therefore, equivalent changes made according to the scope of the patent application of the present invention still fall within the scope covered by the present invention.

Claims

1. An LED packaging device, characterized in that, The LED packaging device is a white LED packaging device, including a substrate with a planar structure and an LED chip disposed on the substrate. A sealing glue layer is provided on the substrate, and the sealing glue layer covers the LED chip. The LED chip is a blue LED chip; The LED packaging device further includes a transparent groove. The material of the transparent groove is glass. A quantum dot layer is provided on the bottom of the transparent groove. A barrier film layer formed by an evaporation process or a magnetron sputtering process is further provided on the quantum dot layer. The material of the barrier film layer is silicon oxide. The peripheral wall of the barrier film layer and the side wall of the transparent groove are hermetically and fixedly connected through the evaporation process or the magnetron sputtering process so that the quantum dots are sealed in the space formed by the transparent groove and the barrier film layer. A phosphor layer is further provided in the transparent groove. The phosphor layer is located above the barrier film layer. The peripheral wall of the phosphor layer is connected to the side wall of the transparent groove so that the barrier film layer is disposed in the space formed by the transparent groove and the phosphor layer. The phosphor layer is a red phosphor layer, and the quantum dot layer is a green quantum dot layer; The transparent groove is inverted and buckled on the sealing glue layer and connected to the sealing glue layer. The sealing glue layer closes the opening of the transparent groove to cover the quantum dot layer, the barrier film layer, and the phosphor layer. One side of the phosphor layer is connected to the barrier film layer, and the other side of the phosphor layer is connected to the sealing glue layer.

2. A packaging method for an LED packaging device, characterized in that, The LED packaging device is a white LED packaging device, and the packaging method includes the following steps: Provide a substrate with a planar structure. An LED chip is provided on the substrate. The LED chip is a blue LED chip; Provide a transparent groove. The material of the transparent groove is glass. A quantum dot layer is provided on the bottom of the transparent groove. A barrier film layer is further provided on the quantum dot layer. The material of the barrier film layer is silicon oxide. The peripheral wall of the barrier film layer and the side wall of the transparent groove are hermetically and fixedly connected so that the quantum dots are sealed in the space formed by the transparent groove and the barrier film layer. A phosphor layer is further provided in the transparent groove. The phosphor layer is located above the barrier film layer. The peripheral wall of the phosphor layer is connected to the side wall of the transparent groove so that the barrier film layer is disposed in the space formed by the transparent groove and the phosphor layer. The phosphor layer is a red phosphor layer, and the quantum dot layer is a green quantum dot layer; Coat a packaging glue on the substrate. The packaging glue covers the LED chip; Invert the transparent groove on the packaging glue and cure the packaging glue to form a sealing glue layer connecting the substrate and the transparent groove. The sealing glue layer closes the opening of the transparent groove to cover the quantum dot layer, the barrier film layer, and the phosphor layer. One side of the phosphor layer is connected to the barrier film layer, and the other side of the phosphor layer is connected to the sealing glue layer; Among them, the step of hermetically and fixedly connecting the peripheral wall of the barrier film layer and the side wall of the transparent groove includes: The barrier film layer is formed on the sidewalls of the quantum dot layer and the transparent groove through an evaporation coating process or a magnetron sputtering process, so that the peripheral wall of the barrier film layer is hermetically and fixedly connected to the sidewall of the transparent groove.

3. The encapsulation method of the LED packaging device according to claim 2, characterized in that, The step of providing a transparent groove with a quantum dot layer provided therein includes: A mixture of quantum dots and glue is dropped onto the bottom of the transparent groove through a dispensing process to form the quantum dot layer.

4. The encapsulation method of the LED packaging device according to claim 2, characterized in that, The phosphor layer is formed through a dispensing process.

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