Radio frequency matching network and generator

Abstract

A method of providing RF pulse data in an RF plasma processing system, the method comprising measuring an electrical parameter within a matching network of the RF plasma processing system; determining a property of the electrical parameter measurement; defining a first statistic of the property of the electrical parameter measurement; defining a second statistic based on the first statistic for at least one of a phase and a process; communicating the first statistic and the second statistic to a user; and storing the first statistic and the second statistic within the matching network.

Description

[0001] Cross-references to related applications

[0002] This invention claims priority to U.S. Provisional Application No. 62 / 963,444, filed January 20, 2020, and U.S. Non-Provisional Patent Application No. 17 / 152,634, filed January 19, 2021, the contents of which are incorporated herein by reference. Background Technology

[0003] Radio frequency (RF) plasma enhancement processes are widely used in semiconductor manufacturing to etch different types of thin films, deposit thin films at low to medium processing temperatures, and perform surface treatments and cleaning. This process is characterized by the use of plasma, a partially ionized gas, to generate neutral nuclides and ions from precursors within the reaction chamber, providing energy for ion bombardment and / or performing other actions. Controlling plasma density is challenging in this process; plasma inhomogeneity within the reaction chamber affects wafer processing uniformity and the yield of integrated circuits or other devices being manufactured.

[0004] Non-uniform plasma density within the reaction chamber can lead to inhomogeneities in etching rates or certain properties on the substrate. In some systems, probes are used to monitor the uniformity of plasma density within the reaction chamber. These probes can rely on the coating's exposure to the plasma environment and can use active electronics to infer the plasma density. Such systems can require milliseconds or longer to respond to changes in plasma. Emission spectroscopy can also be used to determine the plasma density distribution within the reaction chamber, but such systems may require multiple lines of sight through the plasma and use complex analyses to infer non-uniformity. Neither of these techniques is sensitive or fast enough to effectively address non-uniformity issues, and both are more expensive to implement. Attached Figure Description

[0005] When with attachment Figure 1 This disclosure is best understood from the following detailed description. It should be emphasized that, in accordance with industry standard practice, the various features are not drawn to scale. In fact, for ease of discussion, the dimensions of the various features can be increased or decreased arbitrarily.

[0006] Figure 1 This is a side view schematic diagram of an RF plasma processing system according to an embodiment of the present disclosure.

[0007] Figure 2 This is a side view schematic diagram of a plasma chamber in which high-bandwidth sensors are installed at different positions of electrodes according to an embodiment of the present disclosure.

[0008] Figure 3This is a cross-sectional view of a dual-plate electrode assembly of a sensor having a voltage signal provided via an electrical connector according to an embodiment of the present disclosure, the electrical connector having a low shunt capacitance to electrical ground.

[0009] Figure 4 This is a cross-sectional view of a base with an embedded high-bandwidth voltage sensor according to an embodiment of the present disclosure.

[0010] Figure 5 This is a side view of the base according to an embodiment of the present disclosure.

[0011] Figure 6 This is a top view of an axisymmetric surface wave propagating on a base according to an embodiment of the present disclosure, wherein the plasma in the reaction chamber is axisymmetric.

[0012] Figure 7 This is a top view of the propagation of transverse electromagnetic surface waves on electrodes according to an embodiment of the present disclosure.

[0013] Figure 8 This is a cross-sectional view of a sensor mounted in the reaction chamber according to an embodiment of the present disclosure, positioned in orientation (around the axis of symmetry of the reaction chamber).

[0014] Figure 9 This is a side cross-sectional view of the reaction chamber electrode, electrode base, top dielectric plate, viewport, and dielectric wall above which the sensor is mounted, according to an embodiment of this disclosure.

[0015] Figure 10 This is a side cross-sectional view of a capacitively coupled plasma reactor chamber having some sensor array positions according to an embodiment of the present disclosure.

[0016] Figure 11 This is a side cross-sectional view of the chamber of a model inductively coupled plasma reactor according to an embodiment of the present disclosure.

[0017] Figure 12 This is a partial cross-sectional schematic side view of an RF plasma processing system with some possible sensor locations according to an embodiment of the present disclosure.

[0018] Figure 13 This is a partial cross-sectional schematic diagram of the dielectric wall of an RF plasma processing system according to an embodiment of the present disclosure, in which a sensor is mounted on the dielectric surface near an inductively coupled antenna.

[0019] Figure 14 , 15 16 and 17 are process phase diagrams of an RF plasma processing system with a matching network according to embodiments of the present disclosure.

[0020] Figure 17 This is a schematic diagram of the stages of an RF processing system for a matching network according to an embodiment of the present disclosure.

[0021] Figure 18 This is a diagram showing the voltage at the start of an RF pulse in an RF plasma processing system according to an embodiment of the present disclosure.

[0022] Figure 19 This is a schematic diagram of the matching network of an RF plasma processing system according to an embodiment of the present disclosure.

[0023] Figure 20 This is a schematic diagram of a computing system for an RF plasma processing system according to an embodiment of the present disclosure. Detailed Implementation

[0024] Examples of the topics claimed below will now be disclosed. For clarity, not all characteristics of an actual implementation are described in this specification. It should be understood that in the development of any such actual implementation, many implementation-specific decisions can be made to achieve the developer's specific goals, such as complying with system-related and business-related constraints that vary from implementation to implementation. Furthermore, it should be understood that such development, even if complex and time-consuming, would be a routine task for those skilled in the art to which this disclosure pertains.

[0025] Furthermore, as used herein, the article “a(a)” has its common meaning in the patented technology, namely “one or more”. Here, the term “about” when applied to numerical values ​​generally refers to the tolerance range of the equipment used to produce that value, or in some examples, to ±10%, ±5%, or ±1%, unless otherwise expressly specified. Furthermore, the term “substantially” as used herein means a majority, almost all, all, or a quantity ranging from about 51% to about 100%. Moreover, the examples in this document are for illustrative purposes only and for discussion purposes only, not for limitation.

[0026] Transfer to Figure 1 A side view schematic diagram of an RF plasma processing system 100 is shown according to an embodiment of this disclosure. The RF plasma processing system 100 includes a first RF generator 105 and a second RF generator 110, a first impedance matching network 115, a second impedance matching network 120, a sheath 125, plasma power supply devices (such as a showerhead 130 or equivalent power supply elements such as electrodes), and a pedestal 135. As used herein, a plasma power supply device can refer to any device that introduces energy to generate plasma and may include, for example, a showerhead 130 and / or other types of electrodes and antennas, etc.

[0027] The RF plasma processing system 100 may include one or more RF generators 105, 110 that deliver power to a reaction chamber 140 via one or more impedance matching networks 115, 120. RF power flows from the first RF generator 105 into the plasma in the reaction chamber 140 through the impedance matching network 115, to the nozzle 130 or sidewall, to electrodes other than the nozzle 130, or to an inductive antenna (not shown) that electromagnetically powers the plasma. Energy then flows from the plasma to the ground and / or base 135 and / or the second impedance matching network 120. Typically, the first impedance matching network 115 compensates for variations in load impedance within the reaction chamber 140, such that by adjusting reactive components (e.g., variable capacitors) within the first impedance matching network 115, the combined impedance of the nozzle 130 and the first impedance matching network 115 is equal to the output impedance of the first RF generator 105, for example, 50 ohms. In fact, the term "about" acknowledges that some imprecision relative to a range may occur, but satisfactory results can still be obtained. For example, this inaccuracy could be due to loss of calibration or drift during operation. However, in these cases, the range indicated is the nominal target value under the operating conditions at the time of use.

[0028] In some examples, the first RF generator 105 may provide power at an RF frequency between approximately 400 kHz and 150 MHz, while the second RF generator 110, connected to the base 135, may be powered at an RF frequency lower than that of the first RF generator 105. However, in some implementations, the second RF generator 110 may not provide power at an RF frequency lower than that of the first RF generator 105. Typically, the frequencies of the first and second RF generators 105 and 110 are such that the first RF generator 105 is at an RF frequency that is neither an integer multiple of the frequency of the second RF generator 110 nor an integer fraction of the frequency of the second RF generator 110.

[0029] Impedance matching networks 115, 120 are designed to adjust their internal reactive elements to match the load impedance to the source impedance. While low reflected power is generally considered positive, embodiments of this disclosure ensure that transmitted power is maintained within the reaction chamber 140 and that power reflected back to the first and second RF generators 105, 110 is maintained. Furthermore, even when reflected power is relatively high, the impedance matching networks 115, 120 monitor the forward and reflected power entering and exiting the reaction chamber 140 and adjust the adjustable reactive elements (e.g., vacuum variable capacitors) using a motor drive system or electrically adjustable or switched capacitors. Impedance matching networks 115, 120 may include circuitry for measuring the phase and amplitude of the signal to determine the levels of forward and reflected power from the intended load. Therefore, embodiments of this disclosure can be effective even when the total amount of reflected power is high. If significant reflected power is present at a primary frequency, the capacitors are varied until the reflected power is minimized, for example, less than about 5 watts and / or less than about 1% during the stated period, or less than 1 watt in some embodiments. Typically, harmonic frequency signals, including reflected power at harmonic frequencies, are not measured.

[0030] Despite the numerous advantages of the RF plasma processing system 100, maintaining control over plasma density throughout the multi-step process remains a challenge. For example, a design tolerance of approximately 1% inhomogeneity relative to the nominal density range remains a challenge. Achieving optimal integrated circuit (IC) yields on each wafer requires progressively tight control of plasma and neutral nuclide homogeneity to 1% or even lower as feature sizes shrink to below approximately 10 nm and layer thicknesses to less than 50 nm. Inhomogeneous plasma density within the reaction chamber, or an average density deviating beyond the desired range, can result from slow variations in the reaction chamber, variations in the RF circuitry, or rapid growth (approximately less than one millisecond) of parasitic or secondary plasmas, which, due to non-uniform etch rates, can lead to inhomogeneities in nanoscale features on the processed wafer.

[0031] Even a 1% difference in the etching rate of the entire wafer can lead to yield problems in advanced technologies. Furthermore, since wafer processing typically takes a significant amount of time to show yield losses, it is necessary to rapidly and accurately detect non-uniform plasma density or plasma density deviating from the desired range within a timeframe of less than approximately 1 millisecond to avoid irreversible deviations from the desired feature profiles on the wafer.

[0032] Those skilled in the art will understand that electromagnetic (EM) surface waves can propagate on the surface within the RF-powered plasma in reaction chamber 140. These surface waves possess considerable energy at both the fundamental RF drive frequency and RF harmonics. The average power and power distribution of the harmonics are sensitive functions of plasma density and inhomogeneity. Here, the harmonic profile is defined as the spectrum of a surface wave having frequencies that are integer multiples of the fundamental drive frequency of the reaction chamber 140 based on the RF plasma. For example, if 2 MHz of RF drive power is supplied to reaction chamber 140, the injected power will generate surface waves at said frequency, which propagate along the interface between the plasma and the surface of the internal reaction chamber 140. Harmonic surface waves at integer multiples of the frequency can also be generated. For example, a 2 MHz electromagnetic wave can generate 4, 6, or 8 MHz surface waves. Odd and even harmonics (2nd, 3rd, 4th, 5th, etc.) can both occur, but in some examples, odd harmonics can dominate.

[0033] Various aspects of this disclosure can provide sensor locations on and around the reaction chamber 140 and its components, thereby allowing the detection and analysis of RF surface waves to locate the amplitude and phase of the fundamental and harmonic frequencies at multiple points within or adjacent to the reaction chamber 140. The RF surface waves can be detected by sensing an RF voltage or RF current at the fundamental and harmonic frequencies on the surface of the chamber components. In some embodiments, the voltage sensor may include a pickup disposed on or near an electrode surface, a pedestal base, a chamber wall, or a strap, and a conductor transmitting a signal from the pickup to a connector or cable. The current sensor may include a conductive element that may include one or more loops or partial loops or linear conductors, wherein one end of the conductive element may be at a reference potential that is locally electrically grounded.

[0034] Multiple sensors, such as two or more, can be positioned at different angles around the chamber's axis of symmetry on a specific chamber component to measure the surface voltage or current associated with such surface waves, as discussed in detail below. Here, the angle measured from the chamber reference point around the axis of symmetry is defined as the azimuth angle. In some embodiments, such sensors may be placed at approximately the same distance from the chamber's axis of symmetry.

[0035] Sensors can be mounted at various locations on or around the reaction chamber and / or its components. For example, sensors can be mounted on the surface of electrodes, such as base 135 and / or spray head 130. Sensors can also be mounted on electrode bases inside or outside a vacuum environment. Within the reaction chamber 140, sensors can be mounted on one or more metal wall surfaces of the reaction chamber, and within or outside the wall area containing dielectric material, or on an antenna that inductively supplies power to the plasma. Sensors can also be placed on passive antennas that can be used to sense EM waves near the plasma boundary, or mounted on or near multiple conductive buses or strips that connect the first or second impedance matching networks 115, 120 to the electrodes (e.g., base 135 and / or spray head 130, antenna), or mounted on other components that transmit power to the plasma within the reaction chamber 140. Sensors can also be connected to electrical ground. Thus, as different parts of the RF plasma processing system 100 propagate across their respective component surfaces, sensors can pick up signals from those parts.

[0036] The spectrum of RF harmonics is generated at the electrode-plasma interface, for example... Figure 1 The wave propagates through a sheath 125 within the plasma, and thus the amplitude and phase of all wave components vary with the position on the electrode or support base. This wave also propagates along the inner surface of the metal wall adjacent to the plasma and through any dielectric wall that may be adjacent to the plasma. The amplitude and phase of these waves vary with plasma variations, such as plasma density and inhomogeneity, with response times approximately or less than a few microseconds. Furthermore, the frequency and phase distribution of RF harmonic surface waves propagating at the electrode-plasma interface determines the frequency and phase distribution of harmonic surface waves propagating to the impedance matching networks 115, 120 on the electrode base surface, as well as the frequency and phase distribution of harmonic surface waves propagating on surfaces or walls connected to the electrode or plasma-wall interface. The amplitude and phase of the fundamental and harmonic signals at different sensor locations can determine which parts of the total EM wave field at each frequency are azimuthally symmetric and which are asymmetric.

[0037] In the case of induced plasma, signals from the plasma, such as the fundamental and harmonic frequencies, can propagate back to the antenna and then to the impedance matching network feeding the antenna. Sensors mounted on these surfaces can monitor the frequency and phase distribution of the fundamental and harmonic RF waves on microsecond or faster timescales and can serve as indicators of plasma asymmetry or changes in plasma density or conductivity, compared to specified ranges and phase relationships. Signals from such sensors can be transmitted via cable or other means to a detector, which analyzes the component frequencies of the signal to generate the amplitude and phase values ​​of each frequency component at each sensor location.

[0038] In some implementations, the amplitude and phase of the detected RF harmonic components can be rapidly determined by circuitry (detectors) in a signal analysis compartment, which can be a separate metal box or chassis, or located within or connected to impedance matching networks 115, 120, or a portion thereof. Such amplitude and phase can be used to determine the state by applying algorithms and plasma inhomogeneity calibration, including the radial distribution and asymmetry of the plasma. Signals from sensors can be Fourier analyzed by dedicated circuitry (detectors) with sufficient speed to perform near-continuous spectral analysis, refreshing as frequently as possible and generating a high-speed data stream. For example, for a plasma power of 13.56 MHz, processing 512 cycles via Fourier analysis can take less than 50 microseconds; for pulsed plasma, when each element of the pulse is at 5 kHz, the plasma state can be updated at a rate of 10 kHz.

[0039] The dedicated Fourier analysis results for the fundamental and harmonic frequencies can be stored on separate storage media, which can be read and / or written by an analysis processor associated with the signal analysis compartment. The stored results or real-time signals can be routed to a high-speed computing processor to determine the asymmetry parameters for each fundamental and harmonic frequency. An algorithm (which can also be stored on separate or different storage media) can be used to compare the asymmetry parameters with values ​​previously stored on separate (or different) storage media to very quickly identify “plasma fault” conditions. The analysis processor can then send appropriate commands to the first and second RF generators 105, 110, such as continuing processing under current conditions or making necessary changes to the processing conditions; in some implementations, commands are sent to two or more RF generators, and, where appropriate, to the impedance matching network associated with these generators. In some implementations, three, four, or more RF generators can be used. Then, the first and second RF generators 105, 110 can continue, stop, change the power supplied, or respond in some other suitable manner—for example, enter a reduced power mode or pulse mode or frequency change, or command certain corrective actions, such as alarm triggering, power interruption, etc., to avoid incorrect wafer processing in the event of a plasma failure or other unacceptable circumstances.

[0040] In some embodiments, the sensors used to detect (the electric and magnetic fields of the surface waves) and characterize the surface waves may be located on the (bare or dielectric-covered) peripheral surface of the base 135 outside the wafer coverage area. For example, if the reaction chamber 140 is to process a circular wafer with a radius of 150 mm, the sensor mounted on the base may be located at a radius greater than 150 mm from the center of the wafer; in some cases, the center of the wafer may be located under the annular peripheral dielectric to control edge effects. The sensor may be additionally or alternatively located on the surface or periphery of the spray head 130 facing the wafer, or on the surface of the base of the base 135 or the base of the spray head 130, whether these locations are inside or outside the vacuum processing environment. The sensor may also be located in various other locations, which will be discussed in detail below, and may be monitored continuously or periodically to provide uniformity of the processed plasma.

[0041] Using sensors outside the vacuum processing environment, such as in the strips or buses of the base connecting the base to one or more impedance matching networks 115, 120, base 135, and / or spray head 130, eliminates the need to transmit signals via vacuum feeders or install transmission cables within the vacuum volume of the reaction chamber 140. Sensors at these locations can monitor the fundamental and harmonic EM waves substantially continuously. This allows the RF plasma processing system 100 to continuously provide plasma density uniformity and determine, within a short time, whether a fault condition has occurred or whether the wafer or substrate is being processed correctly.

[0042] In some example implementations, this disclosure provides apparatus and methods for detecting plasma deviation from a desired “processing window” within an RF plasma processing system 100. The RF plasma processing system 100 may include a reaction chamber 140, which may include a spray head 130 for injecting reactive gases into the reaction chamber 140, and may also include a wafer support base 135. However, in other embodiments, the spray head 130 may not inject gases into the reaction chamber 140. In some embodiments, the spray head 130 is mounted with its center near an approximate axis of symmetry of the reaction chamber 140 and is equipped with a plurality of sensors located in selected orientations around the axis of symmetry. Alternatively or additionally, such sensors may be placed on a wafer-facing surface in a peripheral region of the spray head 130 to detect and measure EM surface waves propagating as the wafer is being processed.

[0043] Furthermore, in some embodiments, multiple sensors may be mounted on the outer surface of the wafer support pedestal 135, outside the area occupied by the wafer, for detecting the amplitude and phase of RF harmonics and fundamental surface waves. Such sensors may be exposed to plasma or covered by a dielectric or a combination of dielectric and metal. Alternatively, the sensors may be located at the periphery of the pedestal 135, inside or outside a vacuum volume, and / or below the plane defined by the wafer. In some implementations, the sensors may be placed on the pedestal base to detect surface electromagnetic waves propagating toward or away from the wafer support area of ​​the pedestal, as well as propagating on the surface of the pedestal base. In some embodiments, the sensors may be mounted close to the wafer plane (e.g., less than 10 cm).

[0044] Alternatively, the sensor may be mounted on a portion of base 135, which is made of metal or other conductive material and is located outside the vacuum region of reaction chamber 140 under atmospheric conditions. The sensor located outside the vacuum region may be mounted on a region of base 135 such that its radius from the base's axis of symmetry is at least 50% of the maximum radius of base 135, and may even exceed 75% of the maximum radius of base 135. In some embodiments, such a sensor may be placed within a few centimeters of the vacuum seal (e.g., an O-ring) supporting base 135. In some embodiments, the sum of the radial and axial propagation distances from the wafer edge to the sensor may be less than about 25 cm, or in some embodiments less than about 15 cm, or even about 10 cm. The specific location and orientation of the sensor according to embodiments of this disclosure will be discussed in detail below.

[0045] Transfer to Figure 2 This disclosure illustrates a schematic side view of a plasma chamber with high-impedance sensors mounted at different locations on the electrodes, according to an embodiment of the present disclosure. Each of the two components used as electrodes, namely base 235 and spray head 230, or equivalent other power supply elements, can use a separate RF generator 205 or 210 and impedance matching networks 215 and 220. Alternatively, the electrodes can have multiple generators and matching networks feeding them. Arrow 245 along the surface of base 235 indicates the inward radial flow of RF current and power from the bottom (biased) RF generator 210, which is electrically connected to base 235 via impedance matching network 220. The resulting electric field facilitates the formation of plasma (not shown) between the electrodes and the radially outward countercurrent of current and power indicated by arrow 250, along the lower surface of spray head 235 or other power supply elements, ultimately reaching the selective grounding circuit in the impedance matching network 215 of spray head 230 or other power supply elements.

[0046] In some embodiments, the reaction chamber 240, having radio frequency power from the first and second RF generators 205, 210 and impedance matching networks 215, 220, may include sensors 255 located around the base 235, which may be covered by a dielectric 260. A communication line 265 may transmit signals from each sensor 255 to a Fourier analysis circuit (not shown), in some embodiments where the sensors 255 are approximately equidistant from the base's axis of symmetry. The Fourier analysis circuit calculates the amplitude and phase of the fundamental frequency and harmonic surface waves picked up by each sensor 255.

[0047] In some implementations, Fourier analysis circuits can calculate the magnitude and phase of the fundamental and higher harmonics of periodic electromagnetic surface waveforms. The resulting amplitude sequence is called a Fourier series, and its phase is derived from the relationship between functions in the time domain and functions in the frequency domain.

[0048] Furthermore, some embodiments of the matching network 220 disclosed herein may include a signal analysis compartment 275 or an accessory to the matching network 220, which is RF isolated from and separate from the RF power processing and impedance matching circuitry or components of the matching network 220. The signal analysis compartment 275 may include Fourier analysis circuitry (detector) for analyzing sensor signals and generating digital amplitude and phase of the RF fundamental and harmonic frequencies. The signal analysis compartment 275 may also include a high-speed digital logic or computational processor for analyzing the relative amplitude and phase of the signal at harmonic frequencies and deriving quantitative parameters characterizing the relative amplitude and relative phase of the axisymmetric and non-axisymmetric harmonic components at each frequency. Additionally, in some embodiments, the disclosed matching network 220 can be connected via a very fast network to a second RF generator 210 and a controller (not shown) for a reaction chamber 240 or an RF plasma processing system 200, in which the sensor 255 is located. In some embodiments, the disclosed enhanced impedance matching network 220 can send commands to a first RF generator 205 and transmit its calculated parameters to a processing chamber controller and / or a tool control system.

[0049] Furthermore, another first RF generator 205 and impedance matching network 215 can also be electrically coupled to another electrode, which can be a spray head 230 in the reaction chamber 240. In one embodiment, the first RF generator 205 can operate at a different frequency than the second RF generator 210, and its frequency may not be an integer multiple of the frequency of the second RF generator 210.

[0050] Similarly, impedance matching network 215 monitors reflected power from the electrodes and processing chamber 240, and can be adjusted if significant reflected power is present from the electrodes. In some embodiments, the second RF generator 210 may be a 400 kHz RF generator, a 2 MHz RF generator, or a 13.56 MHz RF generator or others, while the first RF generator 205 may operate at a slightly higher frequency. In some embodiments, the first RF generator 205 may operate at frequencies greater than 25 MHz, such as 60 MHz, 100 MHz, or higher.

[0051] In one embodiment, the primary function of the first RF generator 205 is to power the reaction chamber 240 to generate plasma between the spray head 230 or another power source such as the electrodes and base 235, both of which generate reactive chemicals, such as fluorine or chlorine, and accelerate ions in the generated plasma to bombard a wafer disposed on the base 235.

[0052] Arranged on the surface of the upper electrode, i.e., the spray head 230, facing the lower electrode, i.e., the base 235, may be a set of sensors 280, whose bandwidth is approximately 10 times greater than the highest frequency RF generator frequency connected to said electrode. In some embodiments, each sensor may have an impedance greater than approximately 100 ohms, and in some embodiments greater than 500 ohms. The sensor 280 may be a voltage sensor or a current sensor, or both may be housed in a single package; for example, a current sensor may include one or more segments of wire that can be electrostatically shielded.

[0053] In some embodiments, sensor 280 is electrically connected to a Fourier analysis circuit in the signal analysis compartment 285 of impedance matching network 215. The Fourier analysis circuit can output the amplitude and phase of different frequency components from each sensor 280 and compare them with other sensors 280 and / or with reference levels stored in memory. In some embodiments, signal analysis may include pattern recognition of amplitude or phase, or amplitude and phase, or artificial intelligence (AI) employing learning algorithms that can use neural networks or conventional digital algorithms to process the signals from sensor 280.

[0054] Signal processing by the Fourier analysis circuit to find the fundamental and harmonic components, including amplitude and phase, can be completed in less than about 10 microseconds. In a preferred embodiment, the processing time for each sensor signal is 1 microsecond or less. The isolated signal analysis compartment 285 of the impedance matching network 215 may include at least one computing or logic processor with considerable computing power and ultra-high-speed (<1 ns cycle time) circuitry employing ultra-high-speed integrated circuits (ICs). In some embodiments, the processor in the signal analysis compartment 285 is programmable so that the supplier or user of the processing compartment 240 can provide or implement proprietary algorithms or analysis software on the computing "platform" provided in the impedance matching network 215.

[0055] In some embodiments, software programs for calculating parameters based on signal amplitude and phase, and further logic algorithms for determining the impact of the offset on processing uniformity based on acceptable plasma conditions, may reside on a movable "plug-in" component containing data memory and connected to the signal processing chamber. The software or logic calculates the degree to which the RF electromagnetic surface wave spectrum deviates from nominal or correct operating condition characteristics. Based on this, a processor associated with the controller can "determine" to take corrective action or terminate processing approximately one millisecond before the wafer is misprocessed. In some embodiments, the expected impact of the offset on process uniformity or other characteristics can be quantitatively assessed approximately 500 microseconds after occurrence, so that corrective action can begin within milliseconds. Furthermore, measures can be taken to minimize or eliminate damage to the wafer or substrate being processed in reaction chamber 240 at this time, thereby avoiding yield losses on the wafer or substrate.

[0056] In some embodiments, the evaluation and / or decision-making performed in the signal analysis compartment 285 of the impedance matching network 215 can be performed by a very fast computing or analysis system using algorithms located in plug-in memory and / or detachable data processing equipment. In other embodiments, the evaluation decisions made in the signal analysis compartment 285 can be performed using an analog or neural network type processor. This determination can further utilize a determination algorithm that can be located in a detachable storage or processing device. Commands for corrective actions can then be rapidly transmitted from compartment 275 of the impedance matching network 215 to the RF generator 205 via a high-speed data line, which can temporarily interrupt, alter, or terminate the power supply to the plasma. This ensures that plant management can immediately take or plan corrective actions for the processing chamber 240 and the RF plasma processing system 200.

[0057] Figure 2The diagram also shows a set of sensors 290 configured on the outer surface of the base 295 of the spray head 230, located outside the vacuum region within the reaction chamber 240 under atmospheric conditions. In some embodiments, an additional sensor 296, like the sensor 290, can be mounted on the base 297 and connected via a high-speed signal cable to the exposed signal processing compartment 275 of the impedance matching network 220. The sensor 296's location outside the vacuum environment of the reaction chamber 240 significantly reduces cost due to the elimination of vacuum feeding and facilitates integration into information and processing networks.

[0058] Sensor 255 can be arranged in some configurations to sense voltage and / or current on the surface of base 235 and can be covered and protected from plasma by dielectric cover 260. Sensors of this type and location, close to the wafer and / or substrate, can therefore have a sensitivity advantage in detecting certain modes of EM surface waves that indicate plasma asymmetry, an important type of plasma inhomogeneity. These in-cavity sensors 255 can use communication lines fed through the vacuum walls, or in some embodiments, wireless communication links operating at optical or lower frequencies.

[0059] Typically, by analyzing signals from any set of voltage, current, phase, or combined sensors 255, 280, 290, and 296, the phase and amplitude modes of EM surface waves at each frequency on the surfaces of the spray head 230 and base 235 can be determined. Generally, the voltage and current signals generated by EM surface waves at a given frequency have a phase relationship with signals of other frequencies. The voltage amplitude at each frequency and at each point is the sum of the voltages of all waves at that frequency from all points on the electrode surface. For a symmetrically fed, axisymmetric electrode surface with an axisymmetric plasma, the superposition of waves from all parts of the electrode and other surfaces in the reaction chamber 240 will produce an axisymmetric surface wave mode. Generally, in a symmetrical chamber with symmetrical electrodes centered on the chamber's axis of symmetry, a perfectly symmetrical plasma primarily has a line of symmetry of equal phase and amplitude in a circular form centered on the center of base 235.

[0060] Go to Figure 3A cross-sectional view of a dual-plate electrode assembly is shown according to an embodiment of this disclosure. The dual-plate electrode assembly has a wide-bandwidth sensor that provides voltage signals to an area surrounding the electrodes and to electrical ground via an electrical connector with low shunt capacitance. In some embodiments, the electrodes (e.g., a spray head 330) may include two generally parallel conductive plates 331, 332, center-aligned, and generally shaped like a substrate or wafer. The surface of the first plate 331 facing away from the second plate 332 may be exposed to a vacuum environment and plasma. The distance between the first plate 331 and the second plate 332 is the length of a dielectric isolation support 333. The first plate 331 may have an embedded sensor 334, the pucks or pickups of which are made of a conductive material, the sensor surface being generally coplanar with the surface of the first plate 331 facing away from the second plate 332.

[0061] In some embodiments, sensor 334 may be mounted in a first plate 331 and surrounded by a low-dielectric-constant dielectric 336, such as quartz or some other suitable material. In some embodiments, the dielectric constant of dielectric 336 may be less than 5, and in some embodiments, for inorganic materials, such as quartz-based aerogels, the dielectric constant may be less than 2. Sensor 334 may have a high bandwidth extending from 100 kHz to at least 10 times the highest driving frequency connected to the chamber, the high bandwidth being up to 300 MHz or more, and may be capable of sensing surface voltage, surface current, or both surface voltage and surface current. In some embodiments, the sensitivity of sensor 334 may vary by less than 30% over the harmonic frequency range of the primary fundamental RF frequency used in the reaction chamber. In some embodiments, at least one wire 337 from each sensor is connected to the inner conductor 338 of a vacuum electrical signal feedthrough 339, the base 341 of which is mounted on an electrically grounded second plate 332. In some embodiments, the leads of each sensor may be directly connected to a circuit board located in a similar position to the second board 332, the circuit board having a ground plane and detector circuitry, one for each sensor, to determine the amplitude and phase of each frequency component.

[0062] The inner conductor 338 of feedthrough 339 may have a small shunt capacitance to the base 341 of feedthrough 339 mounted in the second grounding plate 332, for example, less than 5 picofarads (pf, and in some embodiments less than 2 pf), such that the total shunt capacitance from sensor 334 plus lead 337 plus feedthrough 339 to ground should be less than 5 pf, and in some embodiments less than 3 pf. In some embodiments, the output of base 341 mounted in the second grounding plate 332 may be connected to an attenuator (not shown). In some embodiments, the attenuator may include a resistor with a resistance greater than about 100 ohms. In parallel with resistor 404, there may be a shunt resistor to ground 405. The resistance of the shunt resistor may be, for example, 50 ohms, or may be equal to the impedance of the cable connecting the attenuator to a communication network or plasma chamber controller. If the detector is located at Figure 3 In this configuration, replacing the connector shown in the figure, the signal output from the detector (i.e., the amplitude and phase of the voltage or current of the sensor at each frequency) can be transmitted to the analysis processor located in the matching network compartment.

[0063] Each sensor 334 can measure the voltage or current amplitude of a combined electromagnetic surface wave (EMIS) mode, which has fundamental and harmonic frequencies as components for all RF generators powering the plasma. The fundamental harmonic frequencies range from about 10 kHz to about 500 MHz or higher. In other embodiments, the sensor can measure the voltage at the fundamental and harmonic frequencies in the range of about 100 kHz to about 1 GHz.

[0064] Figure 4 A cross-sectional view of a base with an embedded broadband voltage sensor according to an embodiment of the present disclosure is shown. The voltage sensor 401 may be mounted in electrodes, such as a base 400. In some embodiments, the sensor 401 may be connected to an electrical ground 406 via a resistor. The tip or positioning disc of the sensor 401 may have a wire 402 surrounded by a dielectric 403 (optionally air or vacuum). In some embodiments, the wire 402 from the sensor 401 may pass through an attenuator, such as a resistor 404 having a shunt resistor 405, which in some embodiments may be about 50 ohms, and may also be connected to the electrical ground 406. Such a resistor 404 may be non-inductive and may have a resistance between about 100 ohms and about 100,000 ohms. In some embodiments, the resistance may be between about 500 ohms and about 10,000 ohms. The resistor 405 may also be non-inductive.

[0065] Furthermore, the dielectric 403 should generally be nonmagnetic and have a low loss tangent, less than about 0.01 in some embodiments, or less than about 0.001 in others. In some embodiments, the shunt capacitance between the tip of sensor 401 and lead 402 to the ground electrode should be less than about 5 pF, or less than about 2 pF, so that the reactance between the electrodes of sensor 401 and base 400 should be greater than about 100 ohms at 300 MHz. The purpose of this low shunt capacitance is to reduce the load of sensor 401 on surface waves, minimizing its absorption of wave energy and allowing waves to propagate as if sensor 401 were not present. Under these conditions, the detected surface potential is not significantly different from the surface potential on the electrodes without such sensor 401.

[0066] Go to Figure 5 A side view schematic diagram of a base with associated RF and control components is shown according to an embodiment of this disclosure. The base 501 power supply circuitry includes an RF power generator 405 and an impedance matching network 506. High-speed signal lines, such as cables 511, 512, transmit signals from sensors 502, 503 to a chamber; in some embodiments, the chamber may be located within or connected to the impedance matching network 506. A high-speed line 513 of a data network transmits information from the impedance matching network 506 to a controller 514 of the reaction chamber, generator, tooling, or plant (not shown). Sensors 502, 503 are mounted on or near a base 504 of the base 501, which may be located inside or outside the vacuum region of the reaction chamber.

[0067] In some embodiments, signal analysis, such as fault detection, may be associated with the impedance matching network 506 in compartment 510. Signal analysis compartment 510 may be electrically and / or RF isolated from certain components of the impedance matching network 506 (e.g., vacuum capacitors and high-voltage electronics). Signal analysis compartment 510 receives signals from sensors 502 and 503 via cables 511 and 512. Signal analysis compartment 510 then transmits the signals from each sensor 502 and 503 to internal circuitry, which may be referred to as detectors and may include electronic components such as transistors and passive components. In alternative embodiments, the amplitude and phase of each frequency component are located directly near the sensor, and the signals arriving at the signal analysis compartment may be the amplitude and phase of each frequency component, rather than the raw signal.

[0068] Each detector (not shown) in compartment 510 can perform RF spectrum analysis on signals from a single sensor 502, 503 or from a group of sensors that can be analyzed in parallel. The analysis may include averaging the signals from the group of sensors or one or more sensors 502, 503 over time to reduce noise. In some embodiments, for each frequency component of the signal obtained by each sensor 502, 503, such as the fundamental and harmonic frequencies, there may be amplitude and phase outputs from each detector. The outputs of each detector can then be input to an analog-to-digital converter for each harmonic signal to generate digitized values ​​for the measured amplitude and phase of each harmonic.

[0069] These digital amplitude and phase values ​​for each frequency component and each sensor can be input to a high-speed digital processor in a signal analysis compartment associated with a public impedance matching network, with virtually no delay, e.g., <10 microseconds. The digital processor can analyze the amplitude and phase information of the fundamental and each harmonic from the sensors to determine the relative amplitudes of different surface wave modes of the fundamental and harmonics, including axisymmetric and non-axisymmetric modes. Each frequency component may have different non-axisymmetric modes, and one or more of these different non-axisymmetric modes can be indicators of plasma inhomogeneity.

[0070] In some embodiments, such non-axisymmetric modes can be rapidly identified by an algorithm located on the plug-in. A database of reference values ​​correlating the amplitude of the non-axisymmetric mode with a percentage of plasma inhomogeneity can also be located on the plug-in or detachable processor. The digital processor can also calculate the rate of change of wave mode amplitude and the acceleration of one or more wave mode amplitudes to determine the likelihood of a recent fault. A measurement of the amplitude of the non-axisymmetric mode at a given frequency can be the phase difference of a surface wave at that given frequency at different sensor locations, which are at the same radial distance from the center of a circular electrode symmetrically located in an axisymmetric chamber. Alternatively, a second indicator of the non-axisymmetric mode can be the difference between the amplitudes of a surface wave at a given frequency at different sensor locations, which are at the same radial distance from the center of a circular electrode symmetrically located in an axisymmetric chamber.

[0071] A matching network 506 with an isolation compartment 510 containing a multi-channel detector system (not shown) can simultaneously perform Fourier analysis, digitization, and recording of the voltage amplitude and phase of EM waves propagating at different locations on the base 501. Due to inherent noise, each determined voltage amplitude and phase can be averaged over short time intervals as needed, and the sensor groups 502, 503 can be averaged to determine the amplitude or time-averaged values ​​over a relatively large number of pulses.

[0072] Spray heads, bases, or other energized components (such as electrodes) equipped with sensor arrays or groups can be used as test systems to generate data to characterize and record the relationship between the spectral and spatial patterns of EM wave modes and various non-uniformities of plasma density during RF processes. In some embodiments, engineers can analyze this data offline to characterize and classify plasma behavior and store it in a database, which can be stored in a plug-in storage device that can be connected to a matching network compartment or other controller or monitoring system.

[0073] The relationship between amplitude and phase mode characteristics of non-axisymmetric and axisymmetric EM modes, as well as process and plasma inhomogeneities or deviations from appropriate conditions, can be stored in a plug-in of an open signal analysis compartment connected to a matching network. In implementations where RF plasma handling systems can be used as production tools, plasma and process inhomogeneities can be rapidly detected while monitoring the operation of the chamber. For example, as... Figure 2 The configuration shown Figure 4 The sensor of the disclosed type shown can be modified as follows: Figure 1 The RF plasma system shown.

[0074] To determine whether the process plasma has experienced plasma fault conditions, an analysis processor in a signal analysis compartment associated with the impedance matching network can calculate parameters, in part, based on the amplitude of the non-axisymmetric EM modes of each pre-specified harmonic set driven at certain electrodes or antennas. The processor in some embodiments can then compare these parameters to a range of reference values ​​in a database. This database of reference values ​​can reside on a plug-in connected to the signal analysis compartment, which can be a compartment within or associated with the impedance matching network.

[0075] The database can store parameters characterizing various plasma conditions to help determine the extent to which the plasma deviates from an acceptable “process window.” In some embodiments, the analysis may include comparing the phase of each harmonic from each sensor or group of sensors at a given distance from the center of the electrode. Such phase variations of a sensor or group of sensors with respect to any azimuth angle can be a measure of the asymmetry in the generation and / or propagation of the harmonic modes, and thus a measure of plasma asymmetry and inhomogeneity. In some embodiments, the analysis may include calculating the amplitude difference between sensors or groups of sensors at a given distance from the axis of symmetry. Amplitude variations of a sensor or group of adjacent sensors within an azimuth angle range can also be a measure of the asymmetry in the generation and / or propagation of the harmonic modes, and thus a measure of plasma asymmetry and inhomogeneity.

[0076] The asymmetry quantitative measurements (parameters) of each harmonic in a set of harmonics can then be stored in the plug-in and transmitted via a data network to the chamber and tool controller. Furthermore, as part of the process of determining whether a fault has occurred, trends and accelerations in the parameters can be calculated and compared with reference values ​​and standards in a database. In some embodiments, when such fault conditions occur, algorithms and standards stored in the plug-in can be executed in a processor located in the compartment to determine remedial or preventative measures. This action can then be rapidly transmitted to the RF generator and / or the chamber and / or tool controller.

[0077] In some embodiments, databases, algorithms, standards, and specifications for all such parameters, algorithms, standards, and specifications used for comparison parameters, rates of change of parameters, and acceleration of parameters may reside on a data storage device or detachable processor connected to a port that serves as the input / output port of the signal analysis compartment. Surface wave mode analysis based on signals from sensors and the parameters derived therefrom is rapidly executed by the processor. Any fault declarations and corrective action commands can be transmitted to the RF generator and reported via the network to the controller of the compartment or system within 5 milliseconds or less after occurrence. In some embodiments, fault conditions and specified corrective action instructions can be transmitted to the generator within one millisecond.

[0078] In some embodiments, multiple types of plasma deviations from the desired plasma uniformity can be detected quickly enough, allowing the tool or chamber controller to take steps to correct plasma fault conditions before misprocessing a wafer or substrate. In some cases, the specified corrective measures may be a brief change in the RF power format, such as a continuous-wave (CW) or pulse, a brief complete power-off, a brief frequency change, pausing the current wafer processing and saving the wafer for later processing or disposal, or shutting down the reaction chamber for maintenance.

[0079] In some embodiments, upon detection of a plasma fault condition, a public signal analysis compartment associated with the matching network can command appropriate corrective actions to be performed by the RF generator and / or, in some embodiments, by the matching network. For example, the RF process generator can initiate a termination process to end wafer processing in response to signals measured by sensors on the spray head and / or pedestal. Alternatively, the RF plasma processing deposition system can interrupt power, such as by producing pulsed power, to stop or pulse the plasma, thereby stopping or significantly reducing secondary plasma. In some cases, specified corrective actions can allow processing to continue after a very brief interruption. In some implementations, corrective actions can be determined, for example, by machine learning and / or a programmed remedy based on yield data or other wafer diagnostics.

[0080] Transfer to Figure 6An embodiment of this disclosure shows a top view of an axisymmetric surface wave propagating on a base, wherein the plasma in the reaction chamber is axisymmetric. Figure 6 In the diagram, circle 601 represents the constant phase and amplitude curves of the fundamental and harmonic frequency components of the axisymmetric surface wave mode. These circles are concentric with the electrodes. When both the electrodes and the plasma are axisymmetric and coaxial within the chamber, these modes dominate. At any frequency, the propagation vector 602 of the surface wave will be radial. The waves will propagate towards and away from the center, injecting power into the plasma as they propagate.

[0081] Transfer to Figure 7 A top view of the propagation of transverse electromagnetic surface waves on electrodes is shown according to an embodiment of this disclosure. Figure 7 In this study, for a specific single non-axisymmetric mode, lines 701-704 with constant phase and equal amplitude are approximately straight and parallel, whether at the fundamental frequency or its harmonics. This surface wave can be detected by sensors arranged on the base or spray head of the RF plasma deposition system. The mode can be referred to as “lateral,” meaning the propagation direction (as shown in propagation vectors 705-707) crosses the electrode surface from one side to the other, or from the central plane to the left and right sides. Other non-axisymmetric modes may exist, where the constant phase line can be a curve with its center of curvature offset from the electrode center. Detector readings at each frequency can be decomposed into the sum of axisymmetric modes and (typically a small number) non-axisymmetric modes, reflecting the dominant non-uniformity of the plasma. Typically, the decomposition can identify a lateral mode component and / or a dominant “eccentric” or displacement radial mode, either of which is characteristic of the plasma non-uniformity configuration. The correlation between the plasma non-uniformity configuration and specific non-axisymmetric modes is completed as part of building a database prior to production processing, and may be located in the plug-in unit or other locations.

[0082] Transfer to Figure 8 The illustration shows a top view of an exemplary azimuth sensor arrangement for a reaction chamber according to an embodiment of this disclosure. In this embodiment, a plurality of sensors 800 may be arranged azimuthally around one or more components of the reaction chamber and / or azimuthally above the reaction chamber itself. As briefly discussed above, in this embodiment, there may be four sensors 800 that are placed at different angles around the chamber axis of symmetry 805 on certain chamber components, such as spray heads and / or bases, for measuring surface voltage or current associated with surface waves. In this case, they are spaced at 90-degree intervals, but in some embodiments, they may be spaced at irregular azimuth angles.

[0083] Sensor 800 may include a passive sensor 800 that receives changing electric or magnetic potentials. Sensors 800 may be arranged at different azimuth angles to detect electromagnetic waves with different propagation modes relative to the chamber's axis of symmetry 805. Sensors 800 may be equidistantly positioned around the chamber's axis of symmetry 805 and / or components within the chamber or the chamber itself. Similarly, sensors 800 may be arranged radially opposite each other such that the spacing between sensors 800 and the axis of symmetry is approximately the same. For example, the distance between sensors 800-1 and 800-2 is approximately the same as the distance between 800-3 and 800-4. Similarly, each sensor 800 is equidistant from the chamber's axis of symmetry 805. Examples of sensor spacing and positioning are discussed in more detail below.

[0084] As shown in the figure, sensors 800 are arranged in radially opposite positions. For example, sensor 800-1 is radially opposite sensor 800-3, while sensor 800-2 is radially opposite sensor 800-4. Sensors 800 can be used for non-axisymmetric plasmas to detect waveform differences on different sides of the reaction chamber and / or its components, providing notification when waveform differences occur, as described above, to allow for corrective or proactive action. For example, if sensors 800-1 and 800-4 detect and report waveform differences from their radially opposite positions, such differences can provide an indication of harmonic out-of-phase or different amplitudes, thus indicating the presence of plasma inhomogeneity and asymmetry. Such waveform differences occur when there is a difference in the relative phase or amplitude of one or more harmonics in the signals received by the radially opposite detectors.

[0085] In some embodiments, four sensors 800 can be used, such as Figure 8As shown. However, in other embodiments, different numbers of sensors 800 can be used, such as six, eight, twelve, fourteen, sixteen, eighteen, twenty, or more sensors 800. In some embodiments, the azimuth angles between sensors may not be equal; however, the sensors can observe the same characteristics of non-azimuth-symmetric plasma modes. In some implementations, having six to twelve sensors 800 can be advantageous. The more sensors 800 there are, the more data can be collected, thereby providing enhanced noise immunity and sensitivity to identify inhomogeneities. However, by increasing the number of sensors 800, data processing slows down, resulting in slower remedial and preventative actions. Those skilled in the art will understand that balancing the number of sensors 800 with the desired level of data granularity allows for optimization of the RF plasma process. Therefore, increasing the number of sensors 800 can be beneficial as computing power and the speed of data processing increase. In some embodiments, specific sensors 800 can be selectively turned off and on, thereby allowing the controller to access certain desired data. For example, in a system with eight sensors, four of them can be selectively turned off, thereby reducing the amount of data generated. In other embodiments, additional sensors may be added or removed during operation, thereby changing the amount of data generated.

[0086] Sensor 800 may also include various types of sensors, including circular and other geometries. In some embodiments, sensor 800 may be circular with an area between about 0.1 square centimeters and about 10 square centimeters. Sensor 800 may also include a surface insulating layer or coating to protect sensor 800 from plasma or reactive substances in the reaction chamber, and may also include other optional coatings and layers, such as Faraday shielding for current sensors, aluminum coatings, etc.

[0087] Transfer to Figure 9 A side cross-sectional view of a sensor azimuthally mounted above a reaction chamber is shown according to an embodiment of this disclosure. In this embodiment, the reaction chamber 940 has an axis of symmetry 905 that extends longitudinally from the center of the spray head 930 through the base 935. In other embodiments, the axis of symmetry 905 may extend longitudinally from the center of another electrode (e.g., an antenna). Multiple sensors 900 may be azimuthally arranged at different locations around and inside the reaction chamber 940, and around or associated with specific components (e.g., the spray head 930 and / or the base 935). Figure 9 It is a cross-section, showing only two sensors 900 at each location; however, as regarding... Figure 8 In detail, it was discussed that more sensors 900 could be used during the implementation of the RF plasma monitoring process.

[0088] In some embodiments, sensor 900-1 may be arranged around the edge or periphery of spray head 930. In such embodiments, sensor 900-1 may be at least partially or completely embedded within spray head 900-1, and the outer surface of sensor 900-1 may be coated with an insulating layer to protect sensor 900-1 from the environment within reaction chamber 940. In such embodiments, two or more sensors 900-1 may be arranged azimuthally around the edge of spray head 930, and preferably four or more sensors, thereby allowing the detection of non-uniformity and asymmetry in RF plasma processing.

[0089] In other embodiments, sensor 900-2 may be arranged along the edge of base 935 within the vacuum of reaction chamber 940. As explained above with respect to sensor 900-1, sensor 900-2 may be partially or completely embedded in base 935 and may or may not include an insulating layer disposed on its outer surface. Furthermore, in some embodiments, the sensors may have a dielectric protective portion covering them. In addition to sensor 900-2 disposed around base 935 within the vacuum chamber, other sensors 900-3 and 900-4 may be disposed outside the vacuum chamber of reaction chamber 940 and around base 935. Such sensors 900-3 and 900-4 may be disposed along base 935 and / or its base portion on a metallic surface. Sensor 900 may also be disposed on or associated with other support structures of base 935.

[0090] In other embodiments, sensor 900-5 may be arranged and / or otherwise integrated into the sidewall of reaction chamber 940. In these embodiments, when the wall is dielectric, sensor 900-5 may be arranged on the outer wall 915 of the chamber outside reaction chamber 940, or may be integrated into the sidewall so that sensor 900-5 is located within the vacuum of reaction chamber 940. For metallic walls, the sensor's pickup should be exposed on the inner surface of the wall so that it can sense the electromagnetic field inside the chamber. Other sensor 900-6 may be arranged in viewport 920, which is along the outer wall 915 of the chamber. In these embodiments, sensor 900-6 in the viewport may be located outside the vacuum of reaction chamber 940 or inside reaction chamber 940.

[0091] In other embodiments, sensor 900-7 may be arranged in a dielectric material surrounding, for example, a spray head 930, while in other embodiments, sensor 900-7 may be arranged in a dielectric material surrounding a base 935. Although the specific location of sensor 900 has been discussed herein, sensor 900 may be located in various other locations within and around reaction chamber 940. For example, sensor 900 may be arranged inside or outside a dielectric wall near an antenna or other component. Sensor 900 may also be located in various other locations within the metal wall of reaction chamber 940.

[0092] In some embodiments, combinations of sensors 900-1–900-7 can be used for more accurate monitoring of RF plasma processing. For example, sensor 900-1 around the edge of the spray head 930 can be combined with sensor 900-2 surrounding the edge of the base 935. Similarly, a combination of sensors 900-5 outside the reaction chamber 940 can be combined with sensors 900-1 / 900-2 located inside the reaction chamber 940. In other embodiments, variations in the combinations of the positions of three, four, five, six, seven, or more sensors 900 can be used to further optimize the monitoring of RF plasma processing.

[0093] Transfer to Figure 10 A side section of a model reactor chamber is shown according to an embodiment of this disclosure. In this embodiment, exemplary positions in which sensors 1000 are arranged at multiple azimuth angles around a bottom electrode, which in this example is a base 1035. (This is related to the preceding text regarding...) Figure 9 The sensor being discussed is similar to the 1000. Figure 10 Sensors 1000 are shown in different locations. Sensor 1000-1 is arranged around the outer edge of the base 1035. Sensor azimuth position 1000-2 is arranged around the interior of the reaction chamber 1040, while sensor azimuth position 1000-3 is arranged around the periphery of the adjacent viewport of the reaction chamber 1040.

[0094] In this embodiment, 12 sensors 1000 are shown at each location; however, in other implementations, fewer or more sensors 1000 may be used. Furthermore, in addition to the explicitly stated sensor 1000 locations, other sensor 1000 locations may be used to further enhance the RF plasma processing.

[0095] Transfer to Figure 11 A side cross-sectional schematic diagram of the reaction chamber is shown according to an embodiment of this disclosure. In this embodiment, sensor 1100 is arranged around the antenna of inductively coupled plasma source 1105. Therefore, sensor 1100 can sense RF current or voltage from the plasma source located within reaction chamber 1140.

[0096] Transfer to Figure 12 A partial cross-section of an RF plasma processing system is shown according to an embodiment of this disclosure. In this embodiment, the RF plasma processing system 1200 includes a base 1235. The base 1235 includes a sensor 1240 arranged along the upper outer edge of the base 1235. As described above, the sensor 1240 may be arranged in the upper outer edge, embedded within the base 1235, or alternatively may be arranged around the outer edge of the vacuum chamber, inside or outside the reaction chamber.

[0097] The RF plasma processing system 1200 also includes circuitry 1245 connected to sensor 1240 via communication line 1250. When sensor 1240 receives sensing data from the RF plasma processing system 1200, the data can be sent to circuitry 1245 for processing. Because circuitry 1245 is relatively close to sensor 1240, the time spent transmitting sensing data between them can be reduced. Therefore, initial calculations regarding the electrical characteristics sensed by sensor 1240 can be performed more quickly, and then transmitted to other components 1255 of the RF plasma processing system 1200. Other components 1255 may include, for example, an RF generator, impedance matching network, fault detection compartment, operation controller of reaction chamber, operation controller of tool, plug-in device, signal analysis compartment, or other components connected to the RF plasma processing system 1200.

[0098] Components, other components 1255, or other components not shown of the RF plasma processing system 1200 can adjust various aspects of the RF plasma processing system 1200 to correct faults detected by the sensor 1240 and at least partially processed within the circuit 1245. The circuit 1245 may be located within a base 1235 outside the vacuum of the reaction chamber (not shown) in an isolated structure to protect the circuit 1245 from conditions within the reaction chamber. In other embodiments, the circuit 1245 may be located in the base of the base 1235 or in other areas adjacent to the base 1235.

[0099] like Figure 12 As shown in the cross-section of the components of the RF plasma processing system 1200, those skilled in the art will understand that the circuitry 1245 can be arranged with approximately the same radius at different orientations around the base 1235. Therefore, individual circuitry 1245 can be used for each sensor 1240 or sensor 1240, and can be connected to a centralized circuitry 1245 located at one or more selected locations around and / or within the base 1235.

[0100] Transfer to Figure 13The diagram shows a partial cross-section of an inductively coupled RF plasma processing system 1300 according to an embodiment of the present disclosure. The sensor 1340 shown is configured near the inductive antenna 1330 and can be mounted externally or internally to a dielectric wall (not shown) near the antenna.

[0101] Go to Figure 14 , 15 Figures 16 and 17 illustrate process phase diagrams of a matching network for an RF plasma processing system according to embodiments of the present disclosure. Figure 14 The diagram shows the first phase of the process, where the amplitude of the RF pulse increases over time as the DC section of the generator provides a higher voltage. This first phase can last approximately 1 millisecond, depending on the design features provided by the manufacturer. As shown, the forward voltage 1400 increases with each pulse, and similarly, the reflected voltage 1405 also increases with each pulse.

[0102] exist Figure 15 The diagram shows the second stage of the process, where the amplitude of the RF voltage is constant, but the matching remains unchanged. Therefore, the amplitude of the forward voltage 1500 is constant, and the amplitude of the reflected voltage 1505 is also constant. Figure 16 The diagram shows the third stage of the process, in which matching is tuned. In this third stage, the amplitude of the forward voltage 1600 is constant. The amplitude of the reflected voltage 1605 is also constant, however, it is also lower. A fourth stage, not shown, can also occur in some embodiments, where process parameters have been changed, such as a change in the capacitor, and an endpoint has been reached. In this fourth stage, the impedance can change, which can lead to a voltage change.

[0103] Go to Figure 17 This diagram illustrates the stages of a matching network in an RF processing system according to an embodiment of the present disclosure. As described above, a process may include four stages. In the first stage 1700, the DC current is rising. In the second stage 1705, the matching network begins to tune, but may not be fully tuned. In the third stage 1710, a steady state is reached, where the reflected voltage is relatively low. In the fourth stage 1715, the end time may be reached. This process may occur multiple times for a particular chip.

[0104] Various aspects of this disclosure allow for the derivation of statistics for a single wafer based on dynamic changes relative to various operational stages during the process described above. Therefore, statistics can be performed on one or more stages, and the statistics can include signals associated with specific pulses. For example, statistics can be prepared to allow the measurement of RF voltages on or around sensors, at the output of a matching network, within or around a plasma processing system, and / or on components outside the matching network. Statistics on RF current and / or phase can also be prepared based on the angle between the RF voltage and the RF current. The process can be performed on multiple wafers, and statistics can be compiled to monitor trends. Trends can be used to determine when to issue various alarms and / or intervention commands. Various aspects of determining statistics and generating alarms and intervention commands are discussed in detail below.

[0105] Go to Figure 18 This diagram illustrates the voltage at the start of an RF pulse in an RF plasma processing system according to an embodiment of the present disclosure. Before discussing the accumulation of statistics and how the data is used, an example is given of how the pulse reaches a steady state. In this diagram, the x-axis represents time in microseconds, and the y-axis represents a unit measurement proportional to the voltage. Therefore, various measurements and calculations are required, such as the slope, the time to reach the maximum voltage, the time to reach the steady-state maximum voltage, and the steady-state voltage. Such measurements can be performed on each and / or multiple pulses, allowing for the monitoring of the average value of a particular value, the standard deviation of a particular value, the slope, trends, etc. The acquisition and use of such measurements will not be discussed in detail.

[0106] Embodiments of this disclosure can provide a method for providing RF pulse data in an RF plasma processing system. The method may include measuring electrical parameters within a matching network of the RF plasma processing system. Initially, the matching network may include functionality to detect the type of process occurring, thus knowing the power, a preset position of the capacitor, the position reached by the capacitor when the reflected power is approximately zero, and an identification value of the process that can be provided by the user. Each of these known aspects may be referred to herein individually or collectively as a matching network value.

[0107] Measuring electrical parameters can include measuring one or more aspects of RF plasma processing operation. Some measurements may include relatively slow variables, such as measuring the position of a capacitor, which may occur only once every 10 milliseconds, while other measurements may be relatively fast, such as measuring current, voltage, and phase, as discussed in detail above. Relatively fast measurements can occur within microsecond timeframes, such as every 10 microseconds or less.

[0108] In operation, the method may also include determining attributes of electrical parameter measurements. For each measured electrical parameter, specific characteristics can be identified, such as the time when the reflected power reaches a minimum and / or the slope of the voltage envelope measured on components in or around the plasma chamber, and / or the time it takes for the envelope to reach a steady state, as well as characteristics showing how the voltage and / or current evolve. For example, the attributes may include one or more parameters, such as minimum values, maximum values, transient characteristics, such as slopes, ramps, or trends. The attributes can be determined within a set time period or a predefined time period based on the identified attribute type.

[0109] In practice, the method may also include a first statistic that defines the properties of the measured electrical parameter values. Examples of statistics for a particular property may include mean, standard deviation, trend, etc. Therefore, a statistic can reflect the properties of a specific electrical parameter over a specific time period. The time period for the statistic can be based on the type of measurement initially taken. As mentioned above, for slow-moving variables, the time period can be longer than for relatively fast-moving variables.

[0110] In operation, the method may further include defining a second statistic based on a first statistic for at least one stage and process. The second statistic may represent a set of calculated or measured values ​​aggregated for a stage or process, defined by the first statistic. For example, the first statistic collected for a first stage may be combined to collectively define the second statistic. Similar methods for aggregating the second statistic may be applied to a process, wherein the process may be a time period, an operation type, matching network parameters, or another operational aspect of the process.

[0111] In operation, the method may further include transmitting a first statistic and a second statistic to a user. In some embodiments, the transmission may occur at substantially the same rate as the user's data acquisition rate. Since the first and second statistics can be used individually or jointly to determine the operating conditions of other components or aspects of the matching network or RF plasma processing system, transmitting the statistics to the user allows the user to understand how the process is proceeding. The matching network, components associated with the matching network, or the user can then use the statistics to determine whether any changes to the process are beneficial. For example, the user can use the first and second statistics to determine that a situation is occurring that is detrimental to other aspects of the wafer or process. Therefore, the user can take corrective actions, stop the process, etc., to prevent the event from occurring. Furthermore, the first and second statistics can be used to provide alarms or intervention commands to the user and / or components of the matching network and / or RF generator and / or plasma processing system. The activation of an alarm notifies the user and / or components of the matching network and / or RF generator and / or plasma processing system of a condition, while intervention takes measures to resolve the condition.

[0112] In operation, the method may further include storing a first statistic and a second statistic in a matching network. By storing the first and second statistics in the matching network, the data repository can be used for other aspects of plasma processing. For example, the stored information can be used to determine the expected lifespan of components (e.g., capacitors). The data can also be used to compare one of the first and second statistics with actual measurements of electrical characteristics to determine whether a specific action should occur. In some embodiments, the action may include an alarm or intervention when the comparison between at least one of the first and second statistics and the actual measurement of the electrical characteristic falls within defined criteria.

[0113] In other embodiments, the matching network design parameters can be adjusted based on at least one of the first and second statistics. Design parameters may include parameters controlling how the matching network operates, such as finding a minimum reflected power or intentionally modifying the algorithm to not reach a precise minimum, but optimizing another parameter, for example, making the time to reach the minimum reflected power equal to a predetermined target value and / or the slope of the voltage envelope measured on or around the plasma chamber to achieve the predetermined value. Similarly, the matching network operating parameters can be adjusted based on at least one of the first and second statistics. In other embodiments, the first and second statistics can be grouped when they occur under common process conditions, which may be defined by user-provided identifiers, input power, capacitor preset positions, and capacitor tuning positions. Therefore, statistics of common processes can be analyzed to determine the expected conditions within the RF plasma processing system.

[0114] In addition to the methods described above, certain diagnostics can also be performed on the matching network. Diagnostics may include using the data described above, or they may include other components and devices that collect additional information. See below for details. Figure 19 Examples of such components and methods are described in detail.

[0115] Transfer to Figure 19 A schematic diagram of a matching network 1900 for an RF plasma processing system according to an embodiment of the present disclosure is shown. In this embodiment, an RF signal can be fed into the matching network, close to the output of a low-power RF source 201. The RF signal can be used as a diagnostic signal to determine certain characteristics of the matching network, which is described in detail below.

[0116] Matching networks can include many components, including inductors, capacitors, sensors, etc. Figure 19 In the illustrated embodiment, the matching network includes damping elements 203 located on both the input and output sides of the matching network. The damping elements 203 can suppress signals by, for example, 40 dB, to ensure that the plasma chamber at the matching network output 1905 or the generator on the matching network input side does not affect measurements occurring within the matching network.

[0117] The matching network may also include various sensors, such as input sensor 223 arranged on the input side of the matching network, which can measure, for example, phase and amplitude. Other types of sensors may include one or more voltage sensors 212, impedance sensors 211, current sensors 213, etc. The matching network may also include various other components, such as variable impedance components 221, such as capacitors, and fixed impedance components 222, such as inductors. These components of the matching network are operationally defined as follows.

[0118] The low-power RF source 201 can be built into the matching network or is an additional component inserted into a matching network port (not shown). Therefore, in some embodiments, the additional low-power RF source 201 may allow the same low-power RF source to be used on multiple matching networks, or otherwise modified to accommodate various operational constraints. The low-power source 201 can provide a wave constructed with a known spectrum (e.g., frequency and phase), such as a sine wave or an arbitrary waveform.

[0119] The RF signal may include a spectrum having amplitude and phase defined relative to a single reference value. The impedance at the output of the low-power RF source 201 can be measured by sensor 211. In some embodiments, the RF signal may be blocked by blocking circuit 202. Blocking circuit 202 may block the processing frequency of the matching network but not the RF signal.

[0120] Then, the RF signal can pass through the main part of the matching network circuit without reaching the output. Component 203 can prevent the RF signal from passing through the output. Component 203 can have a low impedance at the process frequency, for example, less than 0.1 ohms (Ω), and a high impedance for the RF signal. Similarly, the RF signal can also bypass the input port of the matching network.

[0121] The matching circuit may include one or more inductors 222 and capacitors 221. In some embodiments, capacitor 221 may be a variable capacitor, such as a variable vacuum capacitor and / or an electronically variable capacitor, such as a pin diode switchable capacitor. In some aspects of the matching circuit, one or more sensors 212 may measure the voltage, current, and phase of the RF signal. In some embodiments, sensor 212 may be a current sensor, such as sensor 213 disposed within the matching circuit at a location where a relatively low voltage is expected. In some implementations, sensors 212 and 213 may also measure voltage, current, and phase at the processing frequency.

[0122] During operation, sensors 212 and 213 can monitor RF signals and compare the monitored RF signals with a predefined mathematical model of the matching network. The predefined mathematical model can be incorporated into the matching network. The predefined mathematical model can include the actual values ​​of fixed and variable elements of the matching network. The voltage difference measured by sensor 212 on either side of the component can be proportional to the component's impedance. When a mismatch occurs between the measured value and the model during processing, the matching network can send alarms and / or intervention commands to the user and / or the matching network and / or the RF generator and / or the plasma processing system components. Alarms or intervention commands are issued when predefined mismatch limits or ranges are encountered.

[0123] Alerts may include sending a message to the user that a mismatch has occurred, allowing the user to determine the next steps. For example, the user may choose to stop the process or determine that the mismatch is too minor to stop the process. The user may also change the operating parameters of the matching network in response to changes. Intervention commands may allow for immediate action, such as automatically changing the operating parameters of the matching network or otherwise informing the user what action to take. In some embodiments, intervention commands may automatically stop the operation of the RF plasma processing system.

[0124] In some implementations, if the measured currents on both sides of a component differ, a certain percentage of the current will be lost through arcing. Furthermore, if the voltage difference between the two sides of a component does not correspond to the calculated voltage implied by the component's current and impedance, this discrepancy can indicate a component malfunction. For example, higher resistance may indicate component aging, requiring maintenance or replacement. In some embodiments, the frequency of the RF signal can vary over time to create resonance at predetermined values ​​for specific components at predefined locations in the matching circuit.

[0125] Therefore, the systems and methods described above can provide increasingly accurate and relatively fast diagnostic methods for RF plasma processing system matching networks. For example, in some embodiments, diagnostics can occur within microsecond timeframes. Thus, users of such matching networks can gain increased understanding of the dynamics of the matching network's functionality, ensuring that the matching network operates within acceptable manufacturing tolerances.

[0126] According to various embodiments, the diagnostic methods described above can occur when the plasma is on or off. When diagnostics are performed with the plasma on, a complete return path of the RF signal is provided. By using a non-power carrier frequency, such diagnostics can also be used to detect relatively rapid changes in impedance, such as electric arcs. When diagnostics are performed with the plasma off, measurements can be focused on the structures leading to the plasma reaction chamber and / or matching network.

[0127] During operation, the systems and methods described above can be used to diagnose the matching network and / or the RF plasma processing system. Such methods may include providing diagnostic RF signals, such as the RF signals described above, wherein the diagnostic RF signals include multiple frequencies. The diagnostic RF signals can be provided to the matching network of the RF plasma processing system.

[0128] In operation, these methods may further include measuring the voltage, current, and phase of the diagnostic RF signal as it propagates through the matching network according to multiple variable capacitors of the matching network. Measurements can be performed as the diagnostic RF signal propagates through the matching network circuitry, which may include, for example, sensors, capacitors, inductors, and other such components.

[0129] In operation, these methods may also include blocking the processing of radio signals between the matching network circuit core and the source providing diagnostic RF signals. The processing of radio signals may include signals representing the RF supplied to the reaction chamber during plasma processing, and the matching network circuit core may include any matching network components and circuitry explained above, including sensors, capacitors, inductors, etc.

[0130] In operation, these methods may also include blocking diagnostic RF signals at the input and output of the matching network, thereby preventing diagnostic RF signals from interfering with the operation of the RF plasma processing system.

[0131] In operation, these methods may also include acquiring multiple resonant components from the diagnostic RF signal and collecting typical reference values ​​for voltage, current, and phase, as well as at least one of the statistics for voltage, current, and phase.

[0132] In operation, these methods may further include comparing voltage, current, and phase with at least one of typical reference values ​​for voltage, current, and phase, and statistical values ​​for voltage, current, and phase. Based on the comparison, the methods may further include generating at least one of alarms and interventions based on the comparison of voltage, current, and phase with typical reference values ​​for voltage, current, and phase, and at least one of voltage statistics, current statistics, and phase statistics. Such alarms and interventions are described in detail above.

[0133] In some embodiments, the method may include calculating and obtaining at least one of the values ​​of matching fixed and variable components. Therefore, obtaining such components can also perform diagnostics to determine the functionality of such components and can be further used to determine whether a specific alert or intervention is needed or recommended.

[0134] Figure 20A computer processing device 1901 according to one or more examples of the present disclosure is illustrated. The computer processing device 1901 can be used to implement various aspects of the present disclosure, such as the methods and systems discussed above, including, for example, controllers or other processing devices for implementing the embodiments described above. The computer processing device 1901 may include one or more central processing units (singular "CPU" or plural "CPUs") 1906 arranged on one or more printed circuit boards (not shown separately). Each of the one or more CPUs 1906 may be a single-core processor (not shown separately) or a multi-core processor (not shown separately). A multi-core processor typically includes multiple processor cores (not shown) arranged on the same physical chip (not shown) or multiple processor cores (not shown) arranged on multiple chips (not shown), these processor cores being arranged together within the same mechanical package (not shown). The computer processing device 1901 may include one or more core logic devices, such as a main bridge 1910 and an input / output ("IO") bridge 1915.

[0135] CPU 1906 may include an interface 1908 to main bridge 1911, an interface 1918 to system memory 1920, and an interface 1923 to one or more I / O devices (e.g., graphics processing unit (“GFX”) 725). GFX 1925 may include one or more graphics processing cores (not displayed independently) and an interface 1928 to display 1930. In some examples, CPU 1906 may integrate the functionality of GFX 1925 and be directly connected (not shown) to display 1930. Main bridge 1911 may include an interface 1908 to CPU 1906 and an interface 1913 to I / O bridge 1915. For example, CPU 1906 may not include interfaces 1918 and 1916 to system memory 1920, and may not include interfaces 1923 and 1921 to GFX 1925 that integrate GFX 1925 or to GFX 1925. Those skilled in the art will recognize that the CPU 1906 and main bridge 1910 can be fully or partially integrated to reduce chip count, motherboard area, thermal design power, and power consumption. The I / O bridge 1915 may include an interface 1913 to the main bridge 1910, one or more interfaces 1933 to one or more I / O expansion devices 1935, an interface 1938 to the keyboard 1940, an interface 1943 to the mouse 1945, an interface 1948 to one or more local storage devices 1950, and an interface 1953 to one or more network interface devices 1955.

[0136] Each local storage device 1950 may be a solid-state storage device, a solid-state storage device array, a hard disk drive, a hard disk drive array, or any other non-transitory computer-readable medium. Each network interface device 1955 may provide one or more network interfaces, including, for example, Ethernet, Fibre Channel, World Interoperability for Microwave Access (WiMAX), and wireless network communication technologies. Bluetooth Or any other network protocol suitable for facilitating network communication. In addition to one or more local storage devices 1950, computer processing device 1901 may include one or more network-connected storage devices 1960, or in place of one or more local storage devices 1950. Network-connected storage device 1960 may be a solid-state storage device, a solid-state storage device array, a hard disk drive, a hard disk drive array, or any other non-transitory computer-readable medium. Network-connected storage device 1960 may or may not be co-located with computer processing device 1901, and may be accessed through one or more network interfaces provided by one or more network interface devices 1955.

[0137] Those skilled in the art will recognize that computer processing device 1901 may include one or more application-specific integrated circuits (ASICs) configured to perform specific functions, such as hashing (not shown), in a more efficient manner. One or more ASICs may be directly interfaced with CPU 1905, main bridge 1910, or I / O bridge 1915. Alternatively, a dedicated computing system (not shown), sometimes called a mining system, may reduce only the necessary components to perform the required functions, such as hashing via one or more hashing ASICs, to reduce chip count, motherboard area, thermal design power, and power consumption. Therefore, those skilled in the art will recognize that various subsets, supersets, or combinations of one or more CPUs 705, main bridge 1910, I / O bridge 1915, or ASICs, or their functions or features, may be fully or partially integrated, or distributed among various devices in a manner varying based on application, design, or form factor, depending on one or more of the illustrated examples. Therefore, the description of computer processing device 700 is merely exemplary and is not intended to limit the type, kind, or configuration of components constituting a computing system suitable for performing computational operations, including but not limited to hash functions. Furthermore, those skilled in the art will recognize that computer processing device 1901, dedicated computing system (not shown), or combination thereof can be arranged in a form factor that is stand-alone, desktop, server, or rack-mounted.

[0138] Those skilled in the art will recognize that, based on one or more of the examples shown, computer processing device 1901 can be based on a cloud server, server, workstation, desktop computer, laptop computer, netbook, tablet computer, smartphone, mobile device and / or any other type of computing system.

[0139] Examples in this disclosure also relate to non-transitory computer-readable media that store computer-executable instructions that can be executed by one or more processors of a computer accessing the computer-readable medium. A computer-readable medium can be any available medium accessible to a computer. For example, such computer-readable media may include random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), compact disc read-only memory (CD-ROM) or other optical disc storage, disk storage or other magnetic storage devices, or any other medium that can be used to carry or store desired program code in the form of instructions or data structures and is accessible to a computer. Disks and optical discs as used herein include compact discs ("CD"), laser discs, optical discs, digital versatile discs ("DVD"), floppy disks, and Blu-ray discs. Optical discs, unlike magnetic disks which typically reproduce data magnetically, use lasers to reproduce data optically.

[0140] It should also be noted that the software implementation aspects of the subject matter claimed below are typically encoded on some form of program storage medium or implemented on some type of transmission medium. The program storage medium is a non-transitory medium, which may be magnetic (e.g., a floppy disk or hard disk drive) or optical (e.g., an optical disc read-only memory or "CD-ROM"), and may be read-only or random access. Similarly, the transmission medium may be twisted pair, coaxial cable, optical fiber, or some other suitable transmission medium known in the art. The claimed subject matter is not limited to any of these aspects of any given implementation.

[0141] For purposes of explanation, specific terminology has been used in the foregoing description to provide a thorough understanding of this disclosure. However, it will be apparent to those skilled in the art that specific details are not required for implementing the systems and methods described herein. Specific examples have been given in the foregoing description for purposes of illustration and description. The foregoing description is not intended to be exhaustive or to limit the disclosure to the precise form described. It will be apparent that many modifications and variations are possible in light of the foregoing teachings. The examples shown and described are intended to best explain the principles and practical application of this disclosure, thereby enabling others skilled in the art to best utilize this disclosure and various examples with various modifications to suit their intended particular purpose. The scope of this disclosure is defined by the following claims and their equivalents.

Claims

1. A method for providing radio frequency pulse data in a radio frequency plasma processing system, the method comprising: Measure the electrical parameters within the matching network of the radio frequency plasma processing system; Determine the attributes of the measured values ​​of the electrical parameters; A first statistic that defines the attribute of the measured value of the electrical parameter; The first statistic is a second statistic that is defined as at least one stage and process; The first statistic and the second statistic are transmitted to the user; The first statistic and the second statistic are stored in the matching network; as well as The first statistic and the second statistic are grouped under common process conditions defined by at least one of the process identifier, input power, capacitor preset position, and capacitor tuning position provided by the user.

2. The method according to claim 1, further comprising: At least one of the first statistic and the second statistic is compared with the actual measured value of the electrical parameter within the matching network.

3. The method according to claim 1, further comprising: The user is alerted when the comparison between at least one of the first and second statistics and the actual measured value of the electrical parameter within the matching network falls within the defined standard range.

4. The method according to claim 1, further comprising: Intervention is performed when the comparison between at least one of the first and second statistics and the actual measured value of the electrical parameter within the matching network falls within a defined standard range.

5. The method according to claim 1, further comprising: The lifetime of the capacitors in the matching network is determined based on at least one of the first statistic and the second statistic.

6. The method according to claim 1, further comprising adjusting the matching network design parameters based on at least one of the first statistic and the second statistic.

7. The method according to claim 1, wherein, The property that determines the measured value of the electrical parameter occurs within less than 10 milliseconds.

8. The method according to claim 1, further comprising: The matching network operating parameters are adjusted based on at least one of the first statistic and the second statistic.

9. The method according to claim 1, wherein, The transmission is performed at a rate substantially the same as the user's data acquisition rate.

10. The method according to claim 1, further comprising: Intervention is performed when the comparison between measurements taken before and after a component of the matching network exceeds a predefined limit.

11. A radio frequency plasma processing system, comprising: Reaction chamber; Matching network electrically connected to the reaction chamber; Sensors arranged within the matching network are used to measure electrical parameters within the matching network of the radio frequency plasma processing system. as well as A controller connected to the sensor, the controller being used for: Determine the attributes of the measured values ​​of the electrical parameters; A first statistic that defines the attribute of the measured value of the electrical parameter; The first statistic is a second statistic that is defined as at least one stage and process; The first statistic and the second statistic are transmitted to the user; The first statistic and the second statistic are stored in the matching network; as well as The first statistic and the second statistic are grouped under common process conditions defined by at least one of the process identifier, input power, capacitor preset position, and capacitor tuning position provided by the user.

12. The system of claim 11, wherein the controller further compares at least one of the first statistic and the second statistic with the actual measured value of the electrical parameter within the matching network.

13. The system according to claim 11, further comprising: A second sensor is arranged within the matching network.

14. The system according to claim 11, wherein, The controller intervenes when the comparison between the previous and subsequent measurements of a component in the matching network exceeds a predefined limit.

15. The system according to claim 11, wherein, The sensor measures at least one of voltage, current, and phase at the processing frequency, and The first statistic and the second statistic are transmitted to the user at a rate substantially the same as the user's data collection rate.

Images