Three-dimensional memory structure and manufacturing method thereof, three-dimensional memory and storage system

Abstract

The application relates to a three-dimensional storage structure and a manufacturing method thereof, a three-dimensional memory and a storage system, which comprises the following steps: forming a stack structure, wherein the stack structure comprises first material layers and second material layers which are alternately arranged in multiple layers in the longitudinal direction; forming a channel hole which penetrates through the stack structure in the longitudinal direction; forming a first charge storage body on the surface of the first material layer exposed to the inner wall of the channel hole; forming a spacing layer on at least one side of the first charge storage body in the longitudinal direction; and forming a second charge storage body on the inner wall of the channel hole in the transverse direction and corresponding to the second material layer, wherein the second charge storage body is separated from the first charge storage body in the longitudinal direction by the spacing layer, so that the migration of charges in the charge storage layer of the three-dimensional storage structure along the channel direction is prevented, and the data retention characteristic of the three-dimensional memory is improved.

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