Fabrication method of micro LED display module and micro LED display module

Abstract

This invention provides a method for fabricating a micro-LED display module and the micro-LED display module itself. The fabrication method includes the following steps: providing a micro-LED chip array wafer, the micro-LED chip array wafer including a light-emitting layer, a first thin film layer, and a support layer, the first thin film layer being located between the light-emitting layer and the support layer; removing the support layer; providing a quantum dot sheet; bonding the quantum dot sheet to the first thin film layer; and then bonding and fixing the quantum dot sheet to the micro-LED chip array wafer. In the above embodiment, by removing the support layer on the micro-LED chip array wafer, after bonding the quantum dot sheet to the micro-LED chip array wafer, compared to traditional micro-LED chips, removing the support layer can shorten the distance between the light-emitting layer and the quantum dot sheet, allowing the light emitted from the light-emitting layer to directly reach the quantum dot sheet, thereby improving the optical crosstalk phenomenon of the micro-LED display module.

Description

Technical Field

[0001] This invention relates to the field of micro LED chip technology, and in particular to a method for preparing a micro LED display module and the micro LED display module itself. Background Technology

[0002] Current Micro-LED color display technology combines blue LED monochrome chips with red and green quantum dot materials to achieve tri-color display. However, current quantum dot full-color technology suffers from optical crosstalk issues.

[0003] This is because the blue light emitted by the light-emitting layer after power-on has a large scattering angle. For example, if the display system only needs to produce red light, the program will control the light-emitting layer corresponding to red light, while the light-emitting layers of other colors will not emit light. However, in practical applications, red light will tilt and irradiate the quantum dot region of green light, causing a slight stimulation that makes it produce green light, thus affecting the display of red light.

[0004] Therefore, how to improve the problem of color light crosstalk that easily occurs in full-color Micro-LED solutions using quantum dot materials, which affects the display effect, is an important issue that the industry urgently needs to solve. Summary of the Invention

[0005] This invention provides a method for preparing a micro LED display module and a micro LED display module, which improves the problem of color crosstalk that easily occurs in the existing full-color Micro-LED scheme using quantum dot materials, thus affecting the display effect.

[0006] This invention proposes a method for fabricating a micro LED display module, comprising the following steps:

[0007] A micro LED chip array chip is provided, the micro LED chip array chip includes a light-emitting layer, a first thin film layer and a support layer, the first thin film layer being located between the light-emitting layer and the support layer;

[0008] Remove the support layer;

[0009] A quantum dot sheet is provided, which is then bonded to the first thin film layer and bonded to the micro LED chip array sheet.

[0010] According to one embodiment of the present invention, the step of providing quantum dot sheets includes:

[0011] A substrate is provided, on which photoresist is spin-coated and a grid structure is formed;

[0012] A color photoresist is spin-coated onto the grid structure, and a color filter layer is formed by overlay and development.

[0013] Quantum dot portions corresponding to the color light filtering layer are fabricated on the color light filtering layer; wherein the color light filtering layer is capable of transmitting light of the same color as the quantum dot portions and filtering out light of other colors.

[0014] The quantum dot sheet is bonded and fixed to the micro LED chip array sheet.

[0015] According to one embodiment of the present invention, the step of providing quantum dot sheets further includes:

[0016] A quantum dot layer corresponding to the color light filtering layer is prepared on the color light filtering layer;

[0017] A transparent quantum dot protective layer is applied to the side of the quantum dot layer away from the substrate.

[0018] The quantum dot protective layer is bonded to the first thin film layer, and the quantum dot sheet is bonded and fixed to the micro LED chip array sheet.

[0019] According to one embodiment of the present invention, the quantum dot sheet further includes a heat insulation layer located between the quantum dot protective layer and the light-emitting layer, and is used to isolate the heat emitted by the light-emitting layer.

[0020] According to one embodiment of the present invention, the quantum dot sheet further includes a thermally conductive layer portion disposed on the side of the quantum dot protective layer facing the light-emitting layer, and the thermally insulating layer portion disposed on the side of the quantum dot protective layer facing the quantum dot layer.

[0021] According to one embodiment of the present invention, the quantum dot sheet further includes a heat insulation layer, which is disposed on opposite sides of the quantum dot protective layer and is used to isolate the heat emitted by the light-emitting layer.

[0022] According to one embodiment of the present invention, the quantum dot protective layer includes one or more of an ITO film layer and a UV adhesive layer.

[0023] According to one embodiment of the present invention, the quantum dot protective layer is prepared by inkjet printing or electrophoretic deposition.

[0024] According to one embodiment of the present invention, black photoresist is spin-coated on the substrate, and the lattice structure is formed by baking, photolithography, and development.

[0025] According to an embodiment of the present invention, the step of spin-coating color photoresist on the grid structure and forming a color filter layer by overlay and development includes:

[0026] Red photoresist is spin-coated onto the grid structure, and a red filter layer is formed by overlay and development.

[0027] Green photoresist is spin-coated onto the grid structure, and a green filter layer is formed by overlay and development.

[0028] Blue photoresist is spin-coated onto the grid structure, and a blue filter layer is formed by overlay and development.

[0029] According to one embodiment of the present invention, the red filter layer corresponds to the red quantum dot portion;

[0030] The green filter layer corresponds to the green quantum dot portion.

[0031] According to one embodiment of the present invention, the step of removing the support layer includes:

[0032] The support layer is removed from the first thin film layer by an etching process; the etching process is either chemical etching or physical etching.

[0033] According to one embodiment of the present invention, the micro LED chip array further includes a second thin film layer, which is disposed on the side of the light-emitting layer away from the first thin film layer; the first thin film layer is an N-GaN layer, the support layer is a U-GaN layer, and the second thin film layer is a P-GaN layer.

[0034] The present invention also provides a micro LED display module, which is prepared by the micro LED display module preparation method described in any one of the above claims.

[0035] Implementing the embodiments of the present invention has the following beneficial effects:

[0036] The fabrication method of the micro LED display module in the above embodiments removes the support layer on the micro LED chip array. After the quantum dot sheet is bonded to the micro LED chip array, compared with traditional micro LED chips, removing the support layer can shorten the distance between the light-emitting layer and the quantum dot sheet, so that the light emitted by the light-emitting layer can directly reach the quantum dot sheet, thereby improving the optical crosstalk phenomenon of the micro LED display module.

[0037] In the micro LED display module of this embodiment, by removing the support layer and making the first thin film layer of the micro LED chip array directly contact the quantum dot sheet, the distance between the light-emitting layer and the quantum dot sheet can be effectively shortened compared to the traditional micro LED display module, so that the light emitted by the light-emitting layer can directly reach the quantum dot sheet, thereby improving the optical crosstalk phenomenon of the micro LED display module.

[0038] In this embodiment, the heat generated when the light-emitting layer emits light can be isolated by the heat-insulating layer, so as to avoid the heat emitted by the light-emitting layer from causing thermal damage to the quantum dot layer and affecting its service life, thereby effectively improving the service life of the quantum dot sheet. Attached Figure Description

[0039] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0040] in:

[0041] Figure 1 This is a schematic flowchart of the fabrication method of the micro LED display module in an embodiment of the present invention;

[0042] Figure 2 This is a partial flowchart illustrating the fabrication method of the micro LED display module in an embodiment of the present invention;

[0043] Figure 3 This is a partial flowchart illustrating the fabrication method of the micro LED display module in an embodiment of the present invention;

[0044] Figure 4 This is a schematic diagram of the fabrication process of the micro LED display module in an embodiment of the present invention;

[0045] Figure 5 This is a schematic diagram of the structure of a micro LED display module in one embodiment of the present invention;

[0046] Figure label:

[0047] 10. Miniature LED display module;

[0048] 100. Micro LED chip array sheet; 110. Light-emitting layer; 120. First thin film layer; 130. Support layer; 140. Second thin film layer; 150. Insulating layer;

[0049] 200, Quantum dot sheet; 210, Substrate; 220, Grid structure; 230, Color filter layer; 240, Quantum dot section; 241, Quantum dot layer; 242, Quantum dot protective layer. Detailed Implementation

[0050] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.

[0051] See Figures 1 to 5 As shown, this embodiment of the invention provides a method for fabricating a micro LED display module, which includes the following steps:

[0052] Step S100: Provide a micro LED chip array 100, which includes a light-emitting layer 110, a first thin film layer 120 and a support layer 130, wherein the first thin film layer 120 is located between the light-emitting layer 110 and the support layer 130.

[0053] Step S200: Remove the support layer 130;

[0054] Step S300: Provide a quantum dot sheet 200, attach the quantum dot sheet 200 to the first thin film layer 120, and bond and fix the quantum dot sheet 200 to the micro LED chip array sheet 100.

[0055] The fabrication method of the micro LED display module 10 in the above embodiments involves removing the support layer 130 on the micro LED chip array 100. After the quantum dot sheet 200 is bonded to the micro LED chip array 100, compared with traditional micro LED chips, removing the support layer 130 can shorten the distance between the light-emitting layer 110 and the quantum dot sheet 200, so that the light emitted by the light-emitting layer 110 can directly reach the quantum dot sheet 200, thereby improving the optical crosstalk phenomenon of the micro LED display module 10.

[0056] It should be noted that, in this embodiment, the micro LED chip array 100 further includes a second thin film layer 140, and the first thin film layer 120 and the second thin film layer 140 are located on opposite sides of the optical axis of the light-emitting layer 110. When the micro LED display module 10 is used, the light-emitting layer 110 is excited to emit colored light through the interaction between the first thin film layer 120 and the second thin film layer 140. The colored light includes, but is not limited to, red light, green light and blue light, preferably blue light.

[0057] In a preferred embodiment, during the flip-chip bonding process of the quantum dot sheet 200 and the micro LED chip array sheet 100, a transparent adhesive can be applied between the two. After the adhesive cures, the fixation between the quantum dot sheet 200 and the micro LED chip array sheet 100 can be effectively improved while ensuring the light flux between the two, thereby improving the service life of the micro LED display module 10.

[0058] See Figure 2 As shown, in one embodiment, step S300 includes:

[0059] Step S310: Provide a substrate 210, spin-coat photoresist on the substrate 210, and form a lattice structure 220 on the substrate 210;

[0060] Step S320: Spin-coat color photoresist onto the grid structure 220, and form a color filter layer 230 by overlay and development;

[0061] Step S330: A quantum dot portion 240 corresponding to the color light filter layer 230 is prepared on the color light filter layer 230; wherein the color light filter layer 230 is able to transmit light of the same color as the quantum dot portion 240.

[0062] Step S340: The quantum dot portion 240 is bonded to the first thin film layer 120, and the quantum dot sheet 200 is bonded and fixed to the micro LED chip array sheet 100.

[0063] Further, see Figure 4 and Figure 5 As shown, the steps of providing the quantum dot sheet 200 further include the following steps:

[0064] A quantum dot layer 241 corresponding to the color light filter layer 230 is prepared; a transparent quantum dot protective layer 242 is covered on the side of the quantum dot layer 241 away from the substrate 210; the quantum dot protective layer 242 is attached to the first thin film layer 120, and the quantum dot sheet 200 is bonded and fixed to the micro LED chip array sheet 100.

[0065] In one embodiment, the quantum dot sheet 200 further includes a heat insulation layer located between the quantum dot layer 241 and the light-emitting layer 110, and is used to isolate the heat emitted by the light-emitting layer 110.

[0066] In this embodiment, the heat generated when the light-emitting layer 110 emits light can be isolated by the heat-insulating layer, so as to avoid the heat emitted by the light-emitting layer 110 from causing thermal damage to the quantum dot layer 241 and affecting its service life, thereby effectively improving the service life of the quantum dot sheet 200.

[0067] In one specific embodiment, the heat insulation layer may be provided only on the side of the quantum dot protective layer 242 facing the light-emitting layer 110; this arrangement ensures that the heat insulation layer completely blocks the light-emitting layer 110.

[0068] In other embodiments, the heat insulation layer may also be located in the middle portion of the quantum dot protective layer 242, where "middle portion" refers to, for example... Figure 2 In the arrangement shown, the heat insulation layer can extend horizontally and completely cover the light-emitting layer 110 on the horizontal surface. At the same time, both the upper and lower sides of the heat insulation layer have partial structures of the quantum dot protective layer 242. In some embodiments, the heat insulation layer can also be located on the side of the quantum dot protective layer 242 facing the quantum dot layer 241, which can also achieve the heat insulation function. The heat insulation layer can be set to isolate the heat conduction between the light-emitting layer 110 and the quantum dot layer 242, and is not limited to a single type.

[0069] In another embodiment, the heat insulation layers can be respectively disposed on opposite sides of the quantum dot protective layer 242. This arrangement allows the two heat insulation layers to completely cover the quantum dot protective layer 242, thereby further improving the heat insulation performance of the quantum dot sheet 200 and consequently extending its service life.

[0070] Furthermore, the quantum dot sheet 200 also includes a heat-conducting layer, which is disposed on the side of the quantum dot protective layer 242 facing the light-emitting layer 110, and a heat-insulating layer is disposed on the side of the quantum dot protective layer 242 facing the quantum dot layer 241.

[0071] By setting up a heat-conducting layer, when the light-emitting layer 110 emits heat, the heat-conducting layer can conduct the heat, which can further improve the heat conduction inside the quantum dot sheet 200, thereby further reducing or isolating the thermal damage to the quantum dot layer 241.

[0072] In some embodiments, the thermally conductive layer can be formed by depositing a material with good thermal conductivity, such as transparent graphene, preferably a transparent material, on one side of the quantum dot protective layer 242 to avoid affecting the luminous flux performance of the quantum dot sheet 200.

[0073] Specifically, the quantum dot protective layer 242 includes one or more of an ITO film layer and a UV adhesive layer.

[0074] In this embodiment, the quantum dot protective layer 242 can be prepared by sputtering evaporation technology to form a conductive ITO film layer, or a UV adhesive layer can be attached to one side of the quantum dot portion 240 by means such as spin coating, printing, or dispensing. Of course, both of the above can be provided in sequence, and there is no limitation here.

[0075] It should be noted that when using an ITO film as the quantum dot protective layer 242, the thermal insulation effect can be improved by increasing the doping concentration of indium tin oxide in the ITO film. Increasing the doping concentration of the ITO film can also achieve thermal insulation on both sides of the quantum dot protective layer 242, thereby further improving the heat dissipation effect of the quantum dot sheet 200 isolating the light-emitting layer 110.

[0076] When UV adhesive is used as the quantum dot protective layer 242, nano-indium tin oxide can be coated on the surface of the UV adhesive layer to achieve the purpose of heat insulation.

[0077] In one embodiment, the quantum dot protective layer 242 is prepared by inkjet printing or electrophoretic deposition.

[0078] Specifically, the step of removing the support layer 130 includes removing the support layer 130 from the first thin film layer 120 using an etching process; the etching process is chemical etching or physical etching.

[0079] In this embodiment, after the micro-LED chip array 100 is peeled off from the sapphire substrate, the residual gallium layer on the support layer 130 is first cleaned. Then, the support layer 130 on the first thin film layer 120 is removed by etching, while retaining the original structure of the first thin film layer 120. Of course, in a preferred embodiment, during etching, it is necessary to avoid damaging the surface of the first thin film layer 120 as much as possible, and only the support layer 130 is removed. This is because the support layer 130 does not participate in electron-hole coupling during the excitation of light by the light-emitting layer 110, so the support layer 130 does not emit light. When light is transmitted into the support layer 130, it will always hinder the propagation of light. By removing the support layer 130, not only can the optical crosstalk phenomenon of the micro-LED chip array 100 be improved, but the light transmittance of the first thin film layer 120 can also be increased, and the display effect can be further optimized.

[0080] See Figure 5 As shown, in one embodiment, the first thin film layer 120 is an N-GaN layer and the support layer 130 is a U-GaN layer.

[0081] In this embodiment, the second thin film layer 140 is a P-GaN layer, and the first thin film layer 120, the support layer 130 and the second thin film layer 140 are all transparent. By exciting the N-GaN layer and the P-GaN layer, the light-emitting layer 110 between them emits light. During the excitation process, the N-GaN layer and the P-GaN layer provide holes and electrons to recombine and emit light in the light-emitting layer 110, thereby emitting light.

[0082] In a conventional micro-LED chip array 100, the light-emitting layer 110 is bonded to the first thin film layer 120, and the support layer 130 is disposed on the side of the first thin film layer 120 away from the light-emitting layer 110. In the fabrication method of this application, since the support layer 130 is removed, when the quantum dot sheet 200 is bonded to the micro-LED chip array 100, the quantum dot sheet 200 can directly contact the first thin film layer 120. This minimizes the optical path between the light-emitting layer 110 and the quantum dot sheet 200. However, when the support layer 130 is present, a portion of the light emitted by the light-emitting layer 110 will always be refracted within the support layer 130. Figure 2 In the arrangement shown, light will be transmitted horizontally. When the light from the light-emitting layer 110 is transmitted to other light-emitting layers 110 or scattered along the edge of the support layer 130 (i.e., the light-emitting layer 110 does not propagate along its optical axis), light crosstalk will occur in the micro LED display module 10, and the display effect will be degraded.

[0083] Specifically, the micro LED chip array 100 further includes an isolation layer 150. The isolation layer 150 has accommodating holes for accommodating the light-emitting layer 110, the first thin film layer 120, and the second thin film layer 140. These accommodating holes correspond to the cavities of the grid structure 220. The cross-sections of the accommodating holes and / or cavities include, but are not limited to, rectangles, polygons, circles, and ellipses. By forming the grid structure 220 on the substrate 210, and forming the color light filter layer 230 and quantum dot portions 240 within the holes of the grid structure 220, the inner walls of the holes can reflect the light transmission of the color light filter layer 230 and the quantum dot portions 240, thereby allowing light to be transmitted along the optical axis of the micro LED chip array 100.

[0084] In one embodiment, black photoresist is spin-coated onto a substrate 210, and a lattice structure 220 is formed by baking, photolithography, and development.

[0085] With this configuration, when the grid structure 220 is formed using black photoresist, the grid structure 220 can not only support the color light filter layer 230 and the quantum dot portion 240, but also isolate light to avoid optical crosstalk on the quantum dot sheet 200.

[0086] See Figure 3 As shown, step S320 further includes:

[0087] Step S321: Spin-coat red photoresist onto the grid structure 220, and form a red filter layer by overlay and development;

[0088] Step S322: Spin-coat green photoresist onto the grid structure 220, and form a green filter layer by overlay and development;

[0089] Step S323: Spin-coat blue photoresist onto the grid structure 220, and form a blue filter layer by overlay and development.

[0090] With this configuration, the color light filter layer 230 can correspond one-to-one with the quantum dot part 240. In this embodiment, the color light filter layer 230 can be used to precisely select the small range of light waves that are to be passed through, while reflecting other unwanted light waves. For example, the red filter layer only allows red light to pass through and filters blue light and other light, so that excess blue and green light cannot pass through the red filter layer. With this configuration, the color light filter layer 230 can filter the color light generated by the quantum dot part 240 to ensure the purity of the color light, thereby ensuring the display effect of the micro LED display module 10. The principle of other color light filter layers 230 is the same, and will not be described in detail here.

[0091] See Figure 5 As shown, in one embodiment, the red filter layer corresponds to the red quantum dot portion; the green filter layer corresponds to the green quantum dot portion.

[0092] In this embodiment, the blue filter layer can correspond to the blue quantum dot portion; when the light-emitting layer 110 that emits blue light is used as the light source, the quantum dot portion corresponding to the blue filter layer can be omitted.

[0093] See Figure 4 and Figure 5 As shown, this embodiment of the invention also provides a micro LED display module 10, which is prepared using the preparation method in any of the above embodiments.

[0094] It is understood that in the micro LED display module 10 of this embodiment, by removing the support layer 130 and making the first thin film layer 120 of the micro LED chip array 100 directly contact the quantum dot sheet 200, the distance between the light-emitting layer 110 and the quantum dot sheet 200 can be effectively shortened compared with the traditional micro LED display module 10, so that the light emitted by the light-emitting layer 110 can directly reach the quantum dot sheet 200, thereby improving the light crosstalk phenomenon of the micro LED display module 10.

[0095] In the description of the embodiments of the present invention, it should be noted that the terms "center," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing the embodiments of the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of the present invention. In addition, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0096] In the description of the embodiments of the present invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "connected" and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of the present invention based on the specific circumstances.

[0097] In embodiments of the present invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0098] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0099] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for fabricating a micro LED display module, characterized in that, Includes the following steps: A micro LED chip array chip is provided, the micro LED chip array chip includes a light-emitting layer, a first thin film layer and a support layer, the first thin film layer being located between the light-emitting layer and the support layer; Remove the support layer; A quantum dot sheet is provided, which is then bonded to the first thin film layer and bonded to the micro LED chip array sheet. The step of providing quantum dot sheets includes: A substrate is provided, on which photoresist is spin-coated and a grid structure is formed; A color photoresist is spin-coated onto the grid structure, and a color filter layer is formed by overlay and development. Quantum dot portions corresponding to the color light filtering layer are fabricated on the color light filtering layer; wherein the color light filtering layer is capable of transmitting light of the same color as the quantum dot portions and filtering out light of other colors. The quantum dot sheet is bonded and fixed to the micro LED chip array sheet; A quantum dot layer corresponding to the color light filtering layer is prepared on the color light filtering layer; On the side of the quantum dot layer away from the substrate, a transparent quantum dot protective layer with a high indium tin oxide doping concentration of ITO film is prepared by magnetron sputtering. The quantum dot protective layer is bonded to the first thin film layer, and the quantum dot sheet is bonded and fixed to the micro LED chip array sheet; The quantum dot sheet further includes a heat insulation layer, which is located between the quantum dot protective layer and the light-emitting layer, or the heat insulation layer is disposed on opposite sides of the quantum dot protective layer and is used to isolate the heat emitted by the light-emitting layer; The quantum dot sheet further includes a thermally conductive layer disposed on the side of the quantum dot protective layer facing the light-emitting layer, and a thermally insulating layer disposed on the side of the quantum dot protective layer facing the quantum dot layer.

2. The method for preparing a micro LED display module according to claim 1, characterized in that, The quantum dot protective layer includes one or more of an ITO film layer and a UV adhesive layer.

3. The method for preparing a micro LED display module according to claim 1, characterized in that, The quantum dot protective layer is prepared by inkjet printing or electrophoretic deposition.

4. The method for preparing a micro LED display module according to claim 1, characterized in that, Black photoresist is spin-coated onto the substrate, and the lattice structure is formed by baking, photolithography, and development.

5. The method for preparing a micro LED display module according to claim 1, characterized in that, The step of spin-coating color photoresist onto the grid structure and forming a color filter layer by overlay and development includes: Red photoresist is spin-coated onto the grid structure, and a red filter layer is formed by overlay and development. Green photoresist is spin-coated onto the grid structure, and a green filter layer is formed by overlay and development. Blue photoresist is spin-coated onto the grid structure, and a blue filter layer is formed by overlay and development.

6. The method for preparing a micro LED display module according to claim 5, characterized in that, The red filter layer corresponds to the red quantum dot portion; The green filter layer corresponds to the green quantum dot portion.

7. The method for preparing a micro LED display module according to claim 1, characterized in that, The step of removing the support layer includes: The support layer is removed from the first thin film layer by an etching process; the etching process is either chemical etching or physical etching.

8. The method for preparing a micro LED display module according to any one of claims 1-7, characterized in that, The micro LED chip array also includes a second thin film layer, which is disposed on the side of the light-emitting layer away from the first thin film layer; the first thin film layer is an N-GaN layer, the support layer is a U-GaN layer, and the second thin film layer is a P-GaN layer.

9. A miniature LED display module, characterized in that, It is prepared using the method for preparing a micro LED display module as described in any one of claims 1-8.

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