A light emitting diode device and its manufacturing method, and a display device

Abstract

The embodiments of the present disclosure provide a light-emitting diode device, a method for manufacturing the same, and a display device. The light-emitting diode device includes a blue sub-pixel region and at least one non-blue sub-pixel region, and the light-emitting diode device includes a light-emitting structure layer and a reflective layer. The light-emitting structure layer includes a first semiconductor layer, a quantum well layer, and a second semiconductor layer located in each sub-pixel region and stacked in sequence; the reflective layer is located on one side of the light-emitting structure layer, and the reflective layer includes a first reflective structure and at least one second reflective structure. The first reflective structure is located in the blue sub-pixel region, and the second reflective structure is located in the non-blue sub-pixel region. The reflectivity of the second reflective structure to blue light is greater than the reflectivity of the first reflective structure to blue light. The technical solution disclosed in the present disclosure can reduce blue light damage.

Description

Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to a light emitting diode device and a preparation method thereof, and a display device. Background Art

[0002] With the rapid development of display products, people are paying more and more attention to blue light damage protection. Blue light damage refers to the photochemical reaction caused by high-energy blue light (400nm~480nm) light radiation, among which 415nm~455nm blue light is the most harmful to the eyes. This high-energy blue light will penetrate the cornea and lens directly to the bottom of the retina, causing irreversible chemical damage to the retinal nerves, or directly causing damage to the cells in the macular area. Over time, vision will decline rapidly, and in severe cases, blindness will occur. In addition to light damage, exposure to blue light can also induce macular degeneration and cataracts, affect mental state and normal sleep cycles, etc. Therefore, the potential hazards of blue light have always been a topic of concern to all sectors of society.

[0003] Gallium nitride-based light-emitting diodes (GaN LEDs) are widely used in solid-state lighting, image display, optical communication and other fields due to their many advantages such as long life, high reliability, small size, low power consumption and fast response speed. It is reported that LED products contain a lot of blue light, so how to reduce the blue light damage in LEDs has become one of the urgent issues to be solved. Summary of the invention

[0004] The embodiments of the present disclosure provide a light emitting diode device and a method for manufacturing the same, and a display device to solve or alleviate one or more technical problems in the prior art.

[0005] As a first aspect of an embodiment of the present disclosure, an embodiment of the present disclosure provides a light-emitting diode device, including a blue sub-pixel region and at least one non-blue sub-pixel region, the light-emitting diode device including a light-emitting structure layer and a reflective layer, the light-emitting structure layer including a first semiconductor layer, a quantum well layer, and a second semiconductor layer located in each sub-pixel region and stacked in sequence;

[0006] The reflective layer is located on one side of the light-emitting structure layer, and the reflective layer includes a first reflective structure and at least one second reflective structure. The first reflective structure is located in a blue sub-pixel area, and the second reflective structure is located in a non-blue sub-pixel area. The reflectivity of the first reflective structure to blue light is less than the reflectivity of the second reflective structure to blue light.

[0007] In some possible implementations, the first reflective structure includes at least one periodic first composite layer, the second reflective structure includes at least two periods of the first composite layer, and the number of periods of the second reflective structure is greater than the number of periods of the first reflective structure;

[0008] The first composite layer includes a first inorganic material layer and a second inorganic material layer which are stacked, and the refractive index of the first inorganic material is greater than the refractive index of the second inorganic material.

[0009] In some possible implementations, the thickness of the first inorganic material layer in the first composite layer is in a range of 40 nm to 50 nm, and the thickness of the second inorganic material layer in the first composite layer is in a range of 72 nm to 82 nm.

[0010] In some possible implementations, the first reflective structure includes two periods of first composite layers.

[0011] In some possible implementations, the number of periods of the first composite layer in the second reflective structure is 4-7.

[0012] In some possible implementations, the reflective layer includes a first sub-reflective layer, and an etch stop layer and a second sub-reflective layer which are sequentially arranged on a side of the first sub-reflective layer away from the light-emitting structure layer, the first sub-reflective layer is located in a blue sub-pixel region and at least one non-blue sub-pixel region, the etch stop layer is at least located in the blue sub-pixel region, the second sub-reflective layer is located in at least one non-blue sub-pixel region, the first sub-reflective layer includes at least one period of the first composite layer, and the second sub-reflective layer includes at least one period of the first composite layer;

[0013] The first reflective structure includes a first sub-reflective layer located in a blue sub-pixel region, and the second reflective structure includes a first sub-reflective layer and a second sub-reflective layer located in at least one non-blue sub-pixel region.

[0014] In some possible implementations, the first reflective structure includes at least two periods of the second composite layer, and the second reflective structure includes at least three periods of the first composite layer;

[0015] Among them, the first composite layer includes a first inorganic material layer and a second inorganic material layer arranged in a stacked manner, the second composite layer includes a first inorganic material layer and a second inorganic material layer arranged in a stacked manner, the refractive index of the first inorganic material is greater than the refractive index of the second inorganic material, and the thickness of the first inorganic material layer and the second inorganic material layer in the first composite layer is different from the thickness of the first inorganic material layer and the second inorganic material layer in the second composite layer.

[0016] In some possible implementations,

[0017] The thickness of the first inorganic material layer in the first composite layer is in the range of 40 nm to 50 nm, and the thickness of the second inorganic material layer in the first composite layer is in the range of 72 nm to 82 nm; and / or,

[0018] The thickness of the first inorganic material layer in the second composite layer is in the range of 53 nm to 63 nm, and the thickness of the second inorganic material layer in the second composite layer is in the range of 95 nm to 105 nm.

[0019] In some possible implementations, a thickness difference between the thickness of the first reflective structure and the thickness of the second reflective structure is less than or equal to 120 nm.

[0020] In some possible implementations, the first reflective structure includes 6 periods of the second composite layer, and the second reflective structure includes 7 periods of the first composite layer.

[0021] In some possible implementations, the refractive index of the first inorganic material is in the range of 2-3, and the refractive index of the second inorganic material is in the range of 1-2.

[0022] In some possible implementations, the light-emitting diode device further includes a first color conversion layer and at least one second color conversion layer, the first color conversion layer is located in a blue sub-pixel region, the at least one second color conversion layer is located in at least one non-blue sub-pixel region, and the first color conversion layer and the at least one second color conversion layer are both located on a side of the light-emitting structure layer away from the reflective layer;

[0023] The first color conversion layer is used to convert blue light of a first wavelength reflected by the first reflective structure into blue light of a second wavelength greater than the first wavelength, and the second color conversion layer is used to convert light reflected by the second reflective structure into non-blue light.

[0024] As a second aspect of the embodiments of the present disclosure, the embodiments of the present disclosure provide a method for preparing a light-emitting diode device, wherein the light-emitting diode device includes a blue sub-pixel region and at least one non-blue sub-pixel region, the light-emitting diode device includes a light-emitting structure layer and a reflective layer, the light-emitting structure layer includes a first semiconductor layer, a quantum well layer, and a second semiconductor layer that are located in each sub-pixel region and are stacked in sequence;

[0025] The method for preparing a light emitting diode device includes a method for preparing a reflective layer, and the method for preparing the reflective layer includes:

[0026] forming a first sub-reflection layer, wherein the first sub-reflection layer is located in a blue sub-pixel region and at least one non-blue sub-pixel region;

[0027] Forming an etch stop layer on one side of the first sub-reflection layer, wherein the etch stop layer is at least located in the blue sub-pixel region;

[0028] A second sub-reflection film is formed on a side of the etching stop layer away from the first sub-reflection layer, the second sub-reflection film is located in a blue sub-pixel region and at least one non-blue sub-pixel region, and the second sub-reflection film located in the blue sub-pixel region is removed by an etching process, and the second sub-reflection film located in at least one non-blue sub-pixel region forms a second sub-reflection layer;

[0029] Among them, the first reflective structure includes a first sub-reflective layer located in the blue sub-pixel area, the second reflective structure includes a first sub-reflective layer and a second sub-reflective layer located in at least one non-blue sub-pixel area, and the reflectivity of the first reflective structure to blue light is lower than the reflectivity of the second reflective structure to blue light.

[0030] As a third aspect of the embodiments of the present disclosure, the embodiments of the present disclosure provide a method for preparing a light-emitting diode device, wherein the light-emitting diode device includes a blue sub-pixel region and at least one non-blue sub-pixel region, the light-emitting diode device includes a light-emitting structure layer and a reflective layer, the light-emitting structure layer includes a first semiconductor layer, a quantum well layer, and a second semiconductor layer that are located in each sub-pixel region and are stacked in sequence;

[0031] The method for preparing a light emitting diode device includes a method for preparing a reflective layer, and the method for preparing the reflective layer includes:

[0032] forming a first photoresist layer, wherein the first photoresist layer is located in the blue sub-pixel region;

[0033] forming a second reflective film on the first photoresist layer, wherein the second reflective film is located in a blue sub-pixel region and at least one non-blue sub-pixel region;

[0034] The first photoresist layer and the second reflective film located at the position of the first photoresist layer are removed, and the second reflective film located in at least one non-blue sub-pixel area forms a second reflective structure;

[0035] forming a second photoresist layer on the second reflective structure, wherein the second photoresist layer is located in at least one non-blue sub-pixel region;

[0036] Forming a first reflective film on a side of the second photoresist layer away from the second reflective structure, the first reflective film being located in a blue sub-pixel region and at least one non-blue sub-pixel region;

[0037] The second photoresist layer and the first reflective film located at the position of the second photoresist layer are removed, and the first reflective film located in the blue sub-pixel area forms a first reflective structure;

[0038] The reflectivity of the first reflective structure to blue light is lower than the reflectivity of the second reflective structure to blue light.

[0039] As a fourth aspect of the embodiments of the present disclosure, the embodiments of the present disclosure provide a display device, comprising a back panel and at least one light emitting diode device as in any embodiment of the present disclosure, the light emitting diode device further comprising a plurality of pairs of first electrodes and a second electrode, each pair of the first electrodes and the second electrode being respectively connected to the first semiconductor layer and the second semiconductor layer in each sub-pixel region, and the light emitting diode device being connected to the back panel via each pair of the first electrodes and the second electrode.

[0040] In some possible implementations,

[0041] The light-emitting diode device further comprises a substrate, the reflective layer is located on a side of the second semiconductor layer away from the quantum well layer, the substrate is located on a side of the first semiconductor layer away from the quantum well layer, the light-emitting diode device further comprises a first color conversion layer and at least one second color conversion layer, the first color conversion layer and the at least one second color conversion layer are both located on a side of the substrate away from the quantum well layer, and the back plate is located on a side of the reflective layer away from the quantum well layer; or,

[0042] The light-emitting diode device further includes a substrate, which is located on a side of the first semiconductor layer away from the quantum well layer, the reflective layer is located on a side of the substrate away from the quantum well layer, and the back plate is located on a side of the reflective layer away from the quantum well layer. The light-emitting diode device further includes a first color conversion layer and at least one second color conversion layer, and the first color conversion layer and the at least one second color conversion layer are both located on a side of the second semiconductor layer away from the quantum well layer; or,

[0043] The reflective layer is located on the side of the second semiconductor layer away from the quantum well layer, the first electrode is connected to the first semiconductor layer, the first electrode is located on the side of the first semiconductor layer away from the quantum well layer, the back plate is located on the side of the first electrode away from the quantum well layer, and the light-emitting diode device also includes a first color conversion layer and at least one second color conversion layer, and the first color conversion layer and the at least one second color conversion layer are both located on the side of the back plate away from the quantum well layer.

[0044] According to the technical solution of the embodiment of the present disclosure, the peak energy of blue light in the blue sub-pixel area is significantly reduced, thereby reducing blue light damage.

[0045] The above summary is for illustrative purposes only and is not intended to be limiting in any way. In addition to the illustrative aspects, embodiments and features described above, further aspects, embodiments and features of the present disclosure will be readily apparent by reference to the accompanying drawings and the following detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] In the accompanying drawings, unless otherwise specified, the same reference numerals throughout the multiple drawings represent the same or similar parts or elements. These drawings are not necessarily drawn to scale. It should be understood that these drawings only depict some embodiments according to the present disclosure and should not be regarded as limiting the scope of the present disclosure.

[0047] Figure 1 It is a structural schematic diagram of a light emitting diode device in one embodiment of the present disclosure;

[0048] Figure 2 is a schematic diagram of the cross-sectional structure of a reflective layer in one embodiment of the present disclosure;

[0049] Figure 3 A schematic diagram of the relationship between the number of periods, reflectivity and wavelength of a Bragg reflector;

[0050] Figure 4 It is a schematic structural diagram of a reflective layer in another embodiment of the present disclosure;

[0051] Figure 5 is a schematic diagram showing the relationship between the number of periods, reflectivity and wavelength of the Bragg reflector formed by the second composite layer;

[0052] Figure 6 is a schematic diagram of a display device in an embodiment of the present disclosure;

[0053] Figure 7 is a schematic diagram of a display device in another embodiment of the present disclosure;

[0054] Figure 8 is a schematic diagram of a display device in another embodiment of the present disclosure;

[0055] Figure 9a This is a schematic diagram of a process for preparing a reflective layer according to an embodiment of the present disclosure after a second reflective film is formed;

[0056] Figure 9b This is a schematic diagram of a process of preparing a reflective layer according to an embodiment of the present disclosure after a second reflective structure is formed;

[0057] Fig.9c This is a schematic diagram of a process for preparing a reflective layer according to an embodiment of the present disclosure after a second photoresist layer is formed;

[0058] Figure 9d This is a schematic diagram of a process for preparing a reflective layer according to an embodiment of the present disclosure after a first reflective film is formed;

[0059] Fig.9e It is a schematic diagram of a process of preparing a reflective layer after forming a first reflective structure according to an embodiment of the present disclosure.

[0060] Description of reference numerals:

[0061] 10. Light-emitting structure layer; 11. First semiconductor layer; 12. Quantum well layer; 13. Second semiconductor layer; 20. Substrate; 21. Current spreading layer; 221. First electrode; 222. Second electrode; 231. First sub-reflection layer; 232. Second sub-reflection layer; 233. Etching stop layer; 241. First pin; 242. Second pin; 25. Passivation layer; 31. First composite layer; 311. First inorganic material layer; 312. Second inorganic material layer; 32. Second composite layer; 41. First reflective structure; 42. Second reflective structure; 50. Backplane; 51. First welding pad; 52. Second welding pad; 61. First photoresist layer; 62. Second photoresist layer; 71. First color conversion layer; 72. Green color conversion layer; 73. Red color conversion layer; 81. First via hole; 82. Second via hole; 83. Third via hole. DETAILED DESCRIPTION

[0062] In the following, only some exemplary embodiments are briefly described. As those skilled in the art will appreciate, the described embodiments may be modified in various ways without departing from the spirit or scope of the present disclosure, and different embodiments may be combined arbitrarily without conflict. Therefore, the drawings and descriptions are considered to be illustrative in nature and not restrictive.

[0063] Figure 1 FIG. 1 is a schematic diagram of the structure of a light emitting diode device in an embodiment of the present disclosure. In one embodiment, Figure 1 As shown, the light emitting diode device may include a blue sub-pixel region B and at least one non-blue sub-pixel region. The light emitting diode device may include a light emitting structure layer 10 and a reflective layer. The light emitting structure layer 10 may include a first semiconductor layer 11, a quantum well layer 12, and a second semiconductor layer 13 located in each sub-pixel region and stacked in sequence.

[0064] The reflective layer is located on one side of the light emitting structure layer 10. The emitting layer includes a first reflective structure 41 and at least one second reflective structure 42. The first reflective structure 41 is located in the blue sub-pixel region B, and the second reflective structure 42 is located in the non-blue sub-pixel region. The reflectivity of the first reflective structure 41 to blue light is less than the reflectivity of the second reflective structure 42 to blue light.

[0065] In the embodiment of the present disclosure, the reflectivity of the first reflective structure 41 located in the blue sub-pixel area B to blue light is lower than the reflectivity of the second reflective structure 42 located in the non-blue sub-pixel area to blue light, thereby significantly reducing the blue light peak energy in the blue sub-pixel area B, thereby reducing blue light damage.

[0066] In this embodiment, the non-blue sub-pixel region may include a red sub-pixel region R and a green sub-pixel region G. It should be noted that the non-blue sub-pixel region may also include sub-pixel regions of other colors, not limited to red and green.

[0067] In one embodiment, the first semiconductor layer 11 may be N-type gallium nitride (n-GaN), and the second semiconductor layer 13 may be P-type gallium nitride (p-GaN). Alternatively, the first semiconductor layer 11 may be P-type gallium nitride (p-GaN), and the second semiconductor layer 13 may be N-type gallium nitride (n-GaN). Exemplarily, N-type gallium nitride may be GaN doped with Si, and P-type gallium nitride may be GaN doped with Mg. The film thickness of N-type gallium nitride may be 2μm to 3μm, and the film thickness of P-type gallium nitride may be 250nm to 350nm, for example, the film thickness of P-type gallium nitride may be 300nm.

[0068] Exemplarily, herein, the first semiconductor layer 11 is configured as N-type gallium nitride, and the second semiconductor layer 13 is configured as P-type gallium nitride.

[0069] Exemplarily, the quantum well layer 12 may be a multi-quantum well structure (MQW), and the material of the quantum well layer 12 may include multiple stacks of InGaN and GaN. The thickness of the quantum well layer 12 may range from 100nm to 150nm, for example, the thickness of the quantum well layer 12 may be 130nm.

[0070] For example, Figure 1 As shown, the first semiconductor layers 11 of adjacent sub-pixel regions can be disconnected or connected to each other; the quantum well layers 12 of adjacent sub-pixel regions can be disconnected or connected to each other; and the second semiconductor layers 13 of adjacent sub-pixel regions are disconnected from each other.

[0071] The reflective layer is located on one side of the light emitting structure layer 10, that is, the reflective layer can be located on the side of the first semiconductor layer 11 away from the quantum well layer 12, or the reflective layer can be located on the side of the second semiconductor layer 13 away from the quantum well layer 12. For example, Figure 1 As shown, the reflective layer may be located on a side of the second semiconductor layer 13 that is away from the quantum well layer 12 .

[0072] In one embodiment, Figure 1As shown, the light emitting diode device further includes a current spreading layer 21 located in each sub-pixel region, the current spreading layer 21 is located on the side of the second semiconductor layer 13 away from the quantum well layer 12, and the reflective layer is located on the side of the current spreading layer 21 away from the quantum well layer 12. The material of the current spreading layer 21 can be a transparent conductive material, for example, the material of the current spreading layer 21 can include at least one of indium tin oxide (ITO) and indium zinc oxide (IZO). The thickness of the current spreading layer 21 can range from 80nm to 120nm, for example, the thickness of the current spreading layer 21 can be 100nm.

[0073] In one embodiment, Figure 1 As shown, the light-emitting diode device can also have multiple pairs of first electrodes 221 and second electrodes 222, and the multiple pairs of first electrodes 221 and second electrodes 222 correspond to multiple sub-pixel regions one by one. In each pair of first electrodes 221 and second electrodes 222, the first electrode 221 can be connected to the first semiconductor layer 11 in the corresponding sub-pixel region, and the second electrode 222 can be connected to the second semiconductor layer 13 in the corresponding sub-pixel region. The material of the first electrode 221 and the second electrode 222 may include at least one of metals or alloys such as titanium (Ti), aluminum (Al), platinum (Pt), gold (Au), and nickel (Ni). The thickness of the first electrode 221 and the second electrode 222 can range from 1μm to 2μm.

[0074] For example, Figure 1 As shown, the first electrode 221 and the second electrode 222 can be located between the reflective layer and the current spreading layer 21, the first electrode 221 can be connected to the first semiconductor layer 11 through a via penetrating the current spreading layer 21, the second semiconductor layer 13 and the quantum well layer 12, and the second electrode 222 is connected to the current spreading layer 21.

[0075] The light emitting diode device further includes a first pin 241 and a second pin 242 located on a side of the reflective layer away from the quantum well layer 12, wherein the first pin 241 is connected to the first electrode 221 through a via hole penetrating the reflective layer, and the second pin 242 is connected to the second electrode 222 through a via hole penetrating the reflective layer. Figure 1 The material of the first pin 241 and the second pin 242 may include at least one of metals or alloys such as tin (Sn), silver (Ag), and copper.

[0076] Figure 2 FIG. 1 is a schematic diagram of the cross-sectional structure of a reflective layer in an embodiment of the present disclosure. Figure 2As shown, the first reflective structure 41 may include at least one period of the first composite layer 31, and the second reflective structure 42 may include at least two periods of the first composite layer 31, and the number of periods of the second reflective structure 42 is greater than the number of periods of the first reflective structure 41. The first composite layer 31 includes a first inorganic material layer 311 and a second inorganic material layer 312 arranged in a stacked manner, and the refractive index of the first inorganic material is greater than the refractive index of the second inorganic material. In such a structure, the first reflective structure 41 can form a Bragg reflector (DBR), and the second reflective structure 42 can form a Bragg reflector.

[0077] It should be noted that "period" refers to the number of repeated stacking of a structure along a certain direction. For example, the first reflective structure 41 includes n periods of first composite layers 31. It can be understood that the first reflective structure 41 includes n first composite layers 31, and the n first composite layers 31 are stacked along a thickness direction perpendicular to the first composite layer 31, and the structures of each first composite layer 31 in the first reflective structure 41 are the same.

[0078] Figure 3 This is a schematic diagram of the relationship between the number of periods, reflectivity and wavelength of a Bragg reflector. Figure 3 It can be seen that for blue light with a wavelength of 400nm to 500nm, the larger the period number of the Bragg reflector, the higher its reflectivity to blue light. Therefore, in the embodiment of the present disclosure, the period number of the second reflective structure 42 is set to be greater than the period number of the first reflective structure 41, so that the reflectivity of the first reflective structure 41 to blue light can be less than the reflectivity of the second reflective structure 42 to blue light, so that the blue light peak energy in the blue sub-pixel area B can be reduced, reducing blue light damage.

[0079] In one embodiment, Figure 2 As shown, the reflective layer may include a first sub-reflective layer 231 and an etch stop layer 233 and a second sub-reflective layer 232 sequentially disposed on one side of the first sub-reflective layer 231. The first sub-reflective layer 231 is located in a blue sub-pixel region B and at least one non-blue sub-pixel region B, the etch stop layer 233 is at least located in the blue sub-pixel region B, and the second sub-reflective layer 232 is located in at least one non-blue sub-pixel region B.

[0080] The first sub-reflection layer 231 includes at least one period of the first composite layer 31, and the second sub-reflection layer 232 includes at least one period of the first composite layer 31. The first reflective structure 41 may include the first sub-reflection layer 231 located in the blue sub-pixel region B, and the second reflective structure 42 may include the first sub-reflection layer 231 and the second sub-reflection layer 232 located in at least one non-blue sub-pixel region. In such a structure, the number of periods of the second reflective structure 42 is greater than the number of periods of the first reflective structure 41.

[0081] With such a structure, the first sub-reflection layer 231 can form a first Bragg reflection layer, and the second sub-reflection layer 232 can form a second Bragg reflection layer.

[0082] Exemplarily, the etch stop layer 233 may be located in the blue sub-pixel region B and at least one non-blue sub-pixel region, so that the first reflective structure 41 may also include the etch stop layer 233 located in the blue sub-pixel region B, and the second reflective structure 42 may also include the etch stop layer 233 located in at least one non-blue sub-pixel region. The material of the etch stop layer 233 may be a transparent metal material, and exemplarily, the material of the etch stop layer 233 may include silver (Ag) metal. For example, the material of the etch stop layer 233 may be silver metal.

[0083] By providing the etching stop layer 233, when the etching process is used to etch the second sub-reflection film, the etching stop layer 233 can control the etching stop of the blue sub-pixel region B to prevent the etching process from damaging the first sub-reflection layer 231 of the blue sub-pixel region B. The material of the etching stop layer 233 can be silver metal, so that the etching stop layer 233 can play a role in reflecting the light path; and, since the etching selectivity ratios of metals and inorganic materials such as (TiO2 / SiO2) are different, when the etching process is used, an etching gas that can etch inorganic materials but cannot etch silver metal can be selected, so that the etching stop layer 233 can serve as an etching stop position for the second sub-reflection film.

[0084] In addition, the Bragg reflector has a better reflection effect on vertically incident light. When the incident angle exceeds 40 degrees, the reflectivity of the Bragg reflector to blue light will decrease. The silver metal etching stop layer 233 can also make up for the poor reflection effect of the reflective layer for large-angle incident light, thereby improving the reflection effect for large-angle incident light.

[0085] In one embodiment, the refractive index of the first inorganic material ranges from 2 to 3 (inclusive of the endpoint values), and the refractive index of the second inorganic material ranges from 1 to 2 (inclusive of the endpoint values).

[0086] Exemplarily, the refractive index of the first inorganic material may be any value between 2 and 3, for example, the refractive index of the first inorganic material may be 2, 2.5 or 3. The first inorganic material may be titanium dioxide (TiO2), and the refractive index of the first inorganic material is about 2.5.

[0087] Exemplarily, the refractive index of the second inorganic material may be any value between 1 and 2, for example, the refractive index of the second inorganic material may be 1, 1.45 or 2. The second inorganic material may be silicon dioxide (SiO2), and the refractive index of the second inorganic material is about 1.45.

[0088] Bragg reflection is a periodic structure formed by alternating two materials with different refractive indices. The optical thickness d of each layer of material is designed to be 1 / 4 of the central reflection wavelength, that is, d=λ0 / (4n), λ0 is the central wavelength, and n is the material refractive index. In this embodiment, λ0 can be 450nm.

[0089] In one embodiment, Figure 2 As shown, the thickness of the first inorganic material layer 311 in the first composite layer 31 may range from 40 nm to 50 nm (including the endpoint values), and the thickness of the second inorganic material layer 312 in the first composite layer 31 may range from 72 nm to 82 nm (including the endpoint values). Exemplarily, the thickness of the first inorganic material layer 311 in the first composite layer 31 may be 45 nm, and the thickness of the second inorganic material layer 312 in the first composite layer 31 may be 77 nm.

[0090] In one embodiment, the first reflective structure 41 may include two periods of the first composite layer 31. Figure 3 It can be seen that by setting the first reflective structure 41 as a first composite layer 31 including two periods, the reflectivity of the first reflective structure 41 to blue light (wavelength of 400nm-500nm) can be about 51%, which can meet the demand of the blue sub-pixel for blue light.

[0091] In one embodiment, the period number of the first composite layer 31 in the second reflective structure 42 may be 4 to 7 (including the end value). Figure 3 It can be seen that the reflectivity of the second reflective structure 42 to blue light (wavelength of 400nm to 500nm) can be greater than 80%, avoiding the loss of blue light in non-blue sub-pixels. Exemplarily, the number of periods of the first composite layer 31 in the second reflective structure 42 can be 4, 5, 6 or 7. For example, the number of periods of the first composite layer 31 in the second reflective structure 42 can be 7, so that the reflectivity of the second reflective structure 42 to blue light (wavelength of 400nm to 500nm) can reach 99%. As a result, the blue light reflectivity of the blue sub-pixel area B is about 48.5% lower than that of the non-blue sub-pixel area, and the blue light peak energy of the blue sub-pixel area B is significantly reduced, reducing blue light damage.

[0092] It should be noted that the number of periods of the first composite layer 31 in the first reflective structure 41 and the number of periods of the first composite layer 31 in the second reflective structure 42 can be set as needed. As long as the number of periods of the first composite layer 31 in the second reflective structure 42 is greater than the number of periods of the first composite layer 31 in the first reflective structure 41, the reflectivity of the second reflective structure 42 to blue light can be greater than the reflectivity of the first reflective structure 41 to blue light.

[0093] In one embodiment, Figure 2 As shown, the first sub-reflection layer 231 may include two periods of the first composite layer 31. By way of example, the second sub-reflection layer 232 may include five periods of the first composite layer 31.

[0094] Figure 4 FIG. 1 is a schematic diagram of the structure of a reflective layer in another embodiment of the present disclosure. Figure 4 As shown, the first reflective structure 41 includes at least two periods of the second composite layer 32, and the second reflective structure 42 includes at least three periods of the first composite layer 31. The second composite layer 32 includes a first inorganic material layer 311 and a second inorganic material layer 312 stacked in layers, and the refractive index of the first inorganic material is greater than the refractive index of the second inorganic material. The thickness of the first inorganic material layer 311 and the second inorganic material layer 312 in the first composite layer 31 is different from the thickness of the first inorganic material layer 311 and the second inorganic material layer 312 in the second composite layer 32.

[0095] In the embodiment of the present disclosure, by setting the thickness of the first inorganic material layer 311 in the first composite layer 31 to be different from the thickness of the first inorganic material layer 311 in the second composite layer 32, and setting the thickness of the second inorganic material layer 312 in the first composite layer 31 to be different from the thickness of the second inorganic material layer 312 in the second composite layer 32, it is achieved that the reflectivity of the first reflective structure 41 to blue light is lower than the reflectivity of the second reflective structure 42 to blue light. Such a structure only requires changing the thickness of the first inorganic material layer 311 and the thickness of the second inorganic material layer 312, which can achieve the technical effect, avoid selecting multiple materials, and reduce material costs.

[0096] In one embodiment, the thickness of the first inorganic material layer 311 in the second composite layer 32 may be in the range of 53 nm to 63 nm (including the endpoint values), and the thickness of the second inorganic material layer 312 in the second composite layer 32 may be in the range of 95 nm to 105 nm (including the endpoint values). Exemplarily, the thickness of the first inorganic material layer 311 in the second composite layer 32 may be 58 nm, and the thickness of the second inorganic material layer 312 in the second composite layer 32 may be 100 nm. Such a first reflective structure 41 has a higher reflectivity for yellow light (580 nm) and a lower reflectivity for blue light, so that the reflectivity of the first reflective structure 41 for blue light is less than the reflectivity of the second reflective structure 42 for blue light.

[0097] In one embodiment, the difference between the thickness of the first reflective structure 41 and the thickness of the second reflective structure 42 is less than or equal to 120 nm. Setting the difference between the thickness of the first reflective structure 41 and the thickness of the second reflective structure 42 to be less than or equal to 120 nm can reduce the step difference between the blue sub-pixel region and the non-blue sub-pixel region B, and will not affect the subsequent film process.

[0098] In one embodiment, the first reflective structure 41 includes 6 periods of the second composite layer 32 , and the second reflective structure 42 includes 7 periods of the first composite layer 31 .

[0099] Figure 5 Schematic diagram of the relationship between the period number, reflectivity and wavelength of the Bragg reflector composed of the second composite layer. Figure 5 As can be seen from FIG. 4 , by configuring the first reflective structure 41 to include 6 periods of the second composite layer 32, the reflectivity of the first reflective structure 41 to blue light can be about 41%. Figure 3 As shown, the reflectivity of the second reflective structure 42 to blue light can reach 99%, so that the reflectivity of the first reflective structure 41 to blue light in the blue sub-pixel area B is significantly lower than the reflectivity of the second reflective structure 42 to blue light in the non-blue sub-pixel area B, thereby reducing blue light damage.

[0100] In addition, the first reflective structure 41 is set to include 6 periods of the second composite layer 32, and the second reflective structure 42 is set to include 7 periods of the first composite layer 31, so that the thickness of the first reflective structure 41 is about 948nm, the thickness of the second reflective structure 42 is about 854, and the difference in thickness between the first reflective structure 41 and the second reflective structure 42 is 94nm. The difference in thickness between the two is not large, which can avoid affecting the process of subsequent film layers.

[0101] In other embodiments, the first reflective structure 41 may include 2 periods, 3 periods, or 7 periods of the second composite layer 32 , which may also make the reflectivity of the first reflective structure 41 to blue light about 41%.

[0102] Exemplarily, in the first composite layer 31 , the first inorganic material layer 311 is close to the quantum well layer 12 ; and in the second composite layer 32 , the first inorganic material layer 311 is close to the quantum well layer 12 .

[0103] In one embodiment, Figure 1 As shown, the light-emitting diode device may also include a first color conversion layer 71 and at least one second color conversion layer, the first color conversion layer 71 is located in the blue sub-pixel area B, and the at least one second color conversion layer is located in at least one non-blue sub-pixel area, and the first color conversion layer 71 and the at least one second color conversion layer are both located on the side of the light-emitting structure layer 10 that is away from the reflective layer.

[0104] The first color conversion layer 71 is used to convert the blue light of the first wavelength reflected by the first reflective structure 41 into the blue light of the second wavelength, which is greater than the first wavelength. The second color conversion layer is used to convert the light reflected by the second reflective structure 42 into non-blue light.

[0105] Exemplarily, the first wavelength of blue light can be short wavelength blue light, such as blue light with a wavelength of 450nm to 455nm, and the second wavelength of blue light can be long wavelength blue light, such as blue light with a wavelength of 455nm to 500nm. This can increase the wavelength of blue light emitted by the light-emitting diode and further reduce blue light damage.

[0106] Exemplarily, the first color conversion layer 71 may be a blue color conversion layer, and the blue color conversion layer may be a blue quantum dot layer. In one example, the particle size of the blue quantum dots in the blue quantum dot layer may be a first size, and the particle size of the blue quantum dots in the blue quantum dot layer in the embodiment of the present disclosure may be a second size, and the second size may be greater than the first size. Thus, the blue quantum dot layer in the embodiment of the present disclosure may convert short-wavelength blue light into long-wavelength blue light, further reducing blue light damage.

[0107] Exemplarily, the non-blue sub-pixel region may include at least one of a green sub-pixel region G and a red sub-pixel region R. Correspondingly, the second color conversion layer may include at least one of a green color conversion layer 72 and a red color conversion layer 73. In this embodiment, the non-blue sub-pixel region may include a green sub-pixel region G and a red sub-pixel region R. The green color conversion layer 72 may be a green quantum dot layer, and the red color conversion layer 73 may be a red quantum dot layer.

[0108] For example, the quantum dot layer material can be non-toxic quantum dots such as ZnSe. The wavelength of the light emitted from the corresponding sub-pixel area can be adjusted by adjusting the particle size of the quantum dots. The accuracy of the color of the red light, green light and blue light emitted by the quantum dots can be adjusted by changing the mixing ratio of the three primary colors.

[0109] In one embodiment, Figure 1 As shown, the light emitting diode device may further include a substrate 20, and the substrate 20 is located on a side of the light emitting structure layer 10 away from the reflective layer. That is, the light emitting structure layer 10 may be disposed on the substrate 20. For example, a first semiconductor layer 11, a quantum well layer 12, and a second semiconductor layer 13 are sequentially epitaxially grown on the substrate 20. A current spreading layer 21, an electrode layer (including a first electrode 221 and a second electrode 222), a reflective layer, and a first pin 241 and a second pin 242 are sequentially formed on a side of the second semiconductor layer 13 away from the substrate 20.

[0110] By way of example, the material of the substrate 20 may be sapphire.

[0111] The first color conversion layer 71 and the second color conversion layer (72, 73) may be located on a side of the substrate 20 away from the light emitting structure layer 10, such as Figure 1 shown.

[0112] Figure 6 is a schematic diagram of a display device in an embodiment of the present disclosure, Figure 7 is a schematic diagram of a display device in another embodiment of the present disclosure, Figure 8 FIG. 4 is a schematic diagram of a display device in another embodiment of the present disclosure.

[0113] In one embodiment, Figure 7 As shown, the light emitting structure layer 10 is located on one side of the substrate 20 ( Figure 8 The light emitting structure layer 10 is located on the upper side of the substrate 20). The light emitting diode device may further include a passivation layer 25, and the passivation layer 25 may be located on the side of the light emitting structure layer 10 away from the substrate 20. The current spreading layer 21 may be located between the light emitting structure layer 10 and the passivation layer 25. The first electrode 221 and the second electrode 222 are located on the side of the passivation layer 25 away from the light emitting structure layer 10, the first electrode 221 is connected to the first semiconductor layer 11 through a via hole penetrating the passivation layer 25, and the second electrode 222 is connected to the current spreading layer 21 through a via hole penetrating the passivation layer 25. The reflective layer (including the first reflective structure 41 and the second reflective structure 42) may be located on the side of the substrate 20 away from the light emitting structure layer 10. The first color conversion layer 71 and the second color conversion layer may be located on the side of the passivation layer 25 away from the light emitting structure layer 10.

[0114] In one embodiment, Figure 8 As shown, the current spreading layer 21 is located on one side of the light emitting structure layer 10. Figure 8 In the embodiment, the current spreading layer 21 is located on the upper side of the light emitting structure layer 10. The reflective layer (including the first reflective structure 41 and the second reflective structure 42) is located on the side of the current spreading layer 21 away from the light emitting structure layer 10. The first electrode 221 is located on the side of the light emitting structure layer 10 away from the emission layer. Figure 8 In the embodiment, the first electrode 221 is located at the lower side of the light emitting structure layer 10. The light emitting diode device may further include a passivation layer 25, which may be located on the side of the reflective layer away from the light emitting structure layer 10, and a second electrode 222 is located on the side of the passivation layer 25 away from the light emitting structure layer 10, and the second electrode 222 is connected to the current spreading layer 21 through a via hole penetrating the passivation layer 25 and the reflective layer. Figure 8As shown, the display device may further include a back plate 50, which is provided with a first pad 51 and a second pad 52, wherein the first pad 51 is connected to the first electrode 221, and the second pad 52 is connected to the second electrode 222. The first color conversion layer 71 and the second color conversion layer may be located on one side of the first pad 51 and the second pad 52 of the back plate 50.

[0115] The present disclosure also provides a method for preparing a light emitting diode device. Figure 2 As shown, the light-emitting diode device includes a blue sub-pixel area B and at least one non-blue sub-pixel area, and the light-emitting diode device includes a light-emitting structure layer 10 and a reflective layer. The light-emitting structure layer 10 includes a first semiconductor layer 11, a quantum well layer 12 and a second semiconductor layer 13 which are located in each sub-pixel area and are stacked in sequence.

[0116] The method for preparing a light emitting diode device includes a method for preparing a reflective layer, and the method for preparing the reflective layer includes:

[0117] forming a first sub-reflection layer 231, wherein the first sub-reflection layer 231 is located in the blue sub-pixel region B and at least one non-blue sub-pixel region;

[0118] An etch stop layer 233 is formed on one side of the first sub-reflection layer 231, and the etch stop layer 233 is at least located in the blue sub-pixel region B;

[0119] A second sub-reflection film is formed on a side of the etching stop layer 233 away from the first sub-reflection layer 231, the second sub-reflection film is located in the blue sub-pixel region B and at least one non-blue sub-pixel region, and the second sub-reflection film located in the blue sub-pixel region B is removed by an etching process, and the second sub-reflection film located in at least one non-blue sub-pixel region forms a second sub-reflection layer 232;

[0120] Among them, the first reflective structure 41 includes a first sub-reflective layer 231 located in the blue sub-pixel area B, the second reflective structure 42 includes a first sub-reflective layer 231 and a second sub-reflective layer 232 located in at least one non-blue sub-pixel area, and the reflectivity of the second reflective structure 42 to blue light is greater than the reflectivity of the first reflective structure 41 to blue light.

[0121] It should be noted that, according to the position structure of the reflective layer in the light emitting diode device, the first sub-reflective layer 231 is formed on the carrier. Figure 1 In the illustrated embodiment, a first sub-reflection layer 231, an etching stop layer 233, and a second sub-reflection layer 232 may be sequentially formed on a side of the electrode layer away from the light emitting structure layer 10. Figure 7 In the illustrated embodiment, a first sub-reflection layer 231, an etching stop layer 233 and a second sub-reflection layer 232 may be sequentially formed on a side of the substrate 20 away from the light emitting structure layer 10. Figure 8 In the illustrated embodiment, a first sub-reflective layer 231 , an etching stopper layer 233 and a second sub-reflective layer 232 may be sequentially formed on a side of the current spreading layer 21 away from the light emitting structure layer 10 .

[0122] The present disclosure also provides a method for preparing a light emitting diode device. Figure 4 As shown, the light-emitting diode device includes a blue sub-pixel area B and at least one non-blue sub-pixel area, and the light-emitting diode device includes a light-emitting structure layer 10 and a reflective layer. The light-emitting structure layer 10 includes a first semiconductor layer 11, a quantum well layer 12 and a second semiconductor layer 13 which are located in each sub-pixel area and are stacked in sequence.

[0123] The method for preparing a light emitting diode device includes a method for preparing a reflective layer, and the method for preparing the reflective layer includes:

[0124] forming a first photoresist layer, wherein the first photoresist layer is located in the blue sub-pixel region B;

[0125] forming a second reflective film on the first photoresist layer, wherein the second reflective film is located in a blue sub-pixel region B and at least one non-blue sub-pixel region B;

[0126] The first photoresist layer and the second reflective film located at the position of the first photoresist layer are removed, and the second reflective film located at at least one non-blue sub-pixel region B forms a second reflective structure 42;

[0127] forming a second photoresist layer on the second reflective structure 42, wherein the second photoresist layer is located in at least one non-blue sub-pixel region;

[0128] A first reflective film is formed on a side of the second photoresist layer away from the second reflective structure 42, wherein the first reflective film is located in the blue sub-pixel region B and at least one non-blue sub-pixel region B;

[0129] The second photoresist layer and the first reflective film located at the position of the second photoresist layer are removed, and the first reflective film located in the blue sub-pixel region B forms a first reflective structure 41;

[0130] The reflectivity of the second reflective structure 42 to blue light is greater than the reflectivity of the first reflective structure 41 to blue light.

[0131] In one embodiment, the process of forming the reflective layer may include:

[0132] A first photoresist layer 61 is formed on one side of the carrier 100, and the first photoresist layer 61 is located in the blue sub-pixel region B. For example, a photoresist may be coated on one side of the carrier 100, and the first photoresist layer 61 may be formed by exposure and development. Figure 9a As shown, Figure 9a It is a schematic diagram of a process of preparing a reflective layer after forming a second reflective film in an embodiment of the present disclosure.

[0133] A second reflective film 42' is formed on the first photoresist layer 61. The second reflective film 42' is located in the blue sub-pixel region B and at least one non-blue sub-pixel region. Figure 9a shown.

[0134] The first photoresist layer 61 and the second reflective film 42' located at the position of the first photoresist layer 61 are removed, and the second reflective film 42' located in at least one non-blue sub-pixel area forms a second reflective structure 42, such as Figure 9b As shown, Figure 9b Schematic diagram of a second reflective structure after being formed in the process of preparing the reflective layer according to an embodiment of the present disclosure. Exemplarily, the thickness of the first photoresist layer 61 may be greater than or equal to the thickness of the first reflective film 42', so that when the first photoresist layer 61 is removed, the second reflective film 42' located at the position of the first photoresist layer 61 may be removed at the same time, so as to avoid the second reflective film 42' at the position of the first photoresist layer 61 from adhering to the surrounding second reflective films 42'.

[0135] A second photoresist layer 62 is formed on the second reflective structure 42. The second photoresist layer 62 is located in at least one non-blue sub-pixel region. Fig.9c As shown, Fig.9c It is a schematic diagram of forming a second photoresist layer in the process of preparing a reflective layer according to an embodiment of the present disclosure.

[0136] A first reflective film 41' is formed on the side of the second photoresist layer 62 away from the second reflective structure 42. The first reflective film 41' is located in the blue sub-pixel region B and at least one non-blue sub-pixel region. Figure 9d As shown, Figure 9d It is a schematic diagram of a process of preparing a reflective layer after forming a first reflective film in an embodiment of the present disclosure.

[0137] The second photoresist layer 62 and the first reflective film 41' located at the position of the second photoresist layer 62 are removed, and the first reflective film 41' located in the blue sub-pixel region B forms a first reflective structure 41, such as Fig.9e As shown, Fig.9e Schematic diagram of the first reflective structure after being formed in the process of preparing the reflective layer in one embodiment of the present disclosure. Exemplarily, the thickness of the second photoresist layer 62 may be greater than or equal to the thickness of the first reflective film 41', so that when the second photoresist layer 62 is removed, the first reflective film 41' located at the position of the second photoresist layer 62 may be removed at the same time, so as to avoid the first reflective film 41' at the position of the second photoresist layer 62 from adhering to the surrounding first reflective films 41'.

[0138] It should be noted that, according to the position structure of the reflective layer in the light emitting diode device, the reflective layer (including the first reflective structure 41 and the second reflective structure 42) is formed on the carrier. Figure 1 In the illustrated embodiment, a reflective layer (including a first reflective structure 41 and a second reflective structure 42) may be formed on a side of the electrode layer away from the light emitting structure layer 10. Figure 7 In the illustrated embodiment, a reflective layer (including a first reflective structure 41 and a second reflective structure 42) may be formed on a side of the substrate 20 that is away from the light emitting structure layer 10. Figure 8 In the illustrated embodiment, a reflective layer (including a first reflective structure 41 and a second reflective structure 42 ) may be formed on a side of the current spreading layer 21 away from the light emitting structure layer 10 .

[0139] The present disclosure also provides a display device, such as Figure 6 As shown, the display device includes a backplane 50 and at least one light-emitting diode device in any embodiment of the present disclosure. The light-emitting diode device also includes a plurality of pairs of first electrodes 221 and second electrodes 222, each pair of first electrodes 221 and second electrodes 222 is respectively connected to the first semiconductor layer 11 and the second semiconductor layer 13 in each sub-pixel region, and the light-emitting diode device is connected to the backplane 50 through each pair of first electrodes 221 and second electrodes 222.

[0140] Exemplarily, a first pad 51 and a second pad 52 may be provided on the back plate 50, the first pad 51 is connected to the first electrode 221, and the second pad 52 is connected to the second electrode 222. The first pad 51 may be a cathode, and the second pad 52 may be an anode. The first electrode 221 is connected to the first semiconductor layer 11, and the second electrode 222 is connected to the second semiconductor layer 13.

[0141] In one embodiment, Figure 6 As shown, the light emitting diode device further includes a substrate 2020, the reflective layer is located on the side of the second semiconductor layer 13 away from the quantum well layer 12, and the substrate 20 is located on the side of the first semiconductor layer 11 away from the quantum well layer 12. The light emitting diode device further includes a first color conversion layer 71 and at least one second color conversion layer, and the first color conversion layer 71 and the at least one second color conversion layer are both located on the side of the substrate 20 away from the quantum well layer 12. The back plate 50 is located on the side of the reflective layer away from the quantum well layer 12.

[0142] In one embodiment, Figure 7As shown, the light emitting diode device further includes a substrate 20, which is located on a side of the first semiconductor layer 11 away from the quantum well layer 12, a reflective layer is located on a side of the substrate 20 away from the quantum well layer 12, and a back plate 50 is located on a side of the reflective layer away from the quantum well layer 12. The light emitting diode device further includes a first color conversion layer 71 and at least one second color conversion layer, which are both located on a side of the second semiconductor layer 13 away from the quantum well layer 12.

[0143] exist Figure 7 In the illustrated embodiment, a first semiconductor layer 11, a quantum well layer 12, and a second semiconductor layer 13 may be sequentially grown on a substrate 20. A current spreading layer 21 is formed on the side of the second semiconductor layer 13 that is away from the quantum well layer 12. A reflective layer is formed on the side of the substrate 20 that is away from the quantum well layer 12. Then, a light-emitting diode device is disposed on a backplane 50 so that the reflective layer faces the backplane 50. The substrate 20 is etched to retain the substrate 20 of each sub-pixel region and remove the substrate 20 outside the sub-pixel region. A passivation layer 25 and an electrode layer are formed on the side of the current spreading layer 21 that is away from the backplane 50, and the electrode layer includes a first electrode 221 and a second electrode 222. The first electrode 221 is connected to the first semiconductor layer 11 through a via hole penetrating the passivation layer 25, and the first electrode 221 is connected to the first welding pad 51 through a via hole penetrating the passivation layer 25; the second electrode 222 is connected to the second semiconductor layer 13 through a via hole penetrating the passivation layer 25, and the second electrode 222 is connected to the second welding pad 52 through a via hole penetrating the passivation layer 25.

[0144] In one embodiment, Figure 8 As shown, the reflective layer is located on the side of the second semiconductor layer 13 away from the quantum well layer 12, the first electrode 221 is connected to the first semiconductor layer 11, the first electrode 221 is located on the side of the first semiconductor layer 11 away from the quantum well layer 12, and the back plate 50 is located on the side of the first electrode 221 away from the quantum well layer 12. The light-emitting diode device also includes a first color conversion layer 71 and at least one second color conversion layer, and the first color conversion layer 71 and the second color conversion layer are both located on the side of the back plate 50 away from the quantum well layer 12.

[0145] exist Figure 8In the illustrated embodiment, a first semiconductor layer 11, a quantum well layer 12, and a second semiconductor layer 13 may be sequentially grown on a substrate 20. A current spreading layer 21 is formed on the side of the second semiconductor layer 13 that is away from the quantum well layer 12. A reflective layer is formed on the side of the current spreading layer 21 that is away from the quantum well layer 12, and a first via hole exposing the current spreading layer 21 may be provided in the reflective layer. The substrate 20 is peeled off, and a first electrode 221 is formed on the side of the first semiconductor layer 11 that is away from the quantum well layer 12; the light-emitting diode device is disposed on the back plate 50, and the first electrode 221 is connected to the first pad 51 of the back plate 50. A passivation layer 25 is formed on the side of the reflective layer that is away from the back plate 50, and a second via hole 82 corresponding to the first via hole 81 is provided in the passivation layer 25, and a third via hole 83 for exposing the second pad 52 is provided in the passivation layer 25. A second electrode 222 is formed on the side of the passivation layer 25 away from the back plate 50 . The second electrode 222 is connected to the current spreading layer 21 through the second via 82 and the first via 81 . The second electrode 222 is connected to the second pad 52 through the third via 83 .

[0146] The display device may be any product or component with a display function, such as a mobile phone, a tablet computer, a television, a monitor, a laptop computer, a digital photo frame, a navigator, or the like.

[0147] In the description of this specification, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present disclosure and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present disclosure.

[0148] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present disclosure, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0149] In the present disclosure, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or a communication; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present disclosure can be understood according to specific circumstances.

[0150] In the present disclosure, unless otherwise clearly specified and limited, a first feature being “above” or “below” a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being “above”, “above”, and “above” a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being “below”, “below”, and “below” a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0151] The disclosure above provides many different embodiments or examples to implement different structures of the present disclosure. In order to simplify the present disclosure, the components and settings of specific examples are described above. Of course, they are only examples, and the purpose is not to limit the present disclosure. In addition, the present disclosure can repeat reference numbers and / or reference letters in different examples, and this repetition is for the purpose of simplification and clarity, which itself does not indicate the relationship between the various embodiments and / or settings discussed.

[0152] The above are only specific embodiments of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any technician familiar with the technical field can easily think of various changes or substitutions within the technical scope disclosed in the present disclosure, which should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.

Claims

1. A light emitting diode device, characterized in that: The light emitting diode device comprises a blue sub-pixel region and at least one non-blue sub-pixel region, wherein the light emitting diode device comprises a light emitting structure layer and a reflective layer, wherein the light emitting structure layer comprises a first semiconductor layer, a quantum well layer, and a second semiconductor layer which are located in each sub-pixel region and are sequentially stacked; The reflective layer is located on one side of the light-emitting structure layer, and the reflective layer includes a first reflective structure and at least one second reflective structure, the first reflective structure is located in the blue sub-pixel area, the second reflective structure is located in the non-blue sub-pixel area, and the reflectivity of the first reflective structure to blue light is less than the reflectivity of the second reflective structure to blue light.

2. The light emitting diode device according to claim 1, characterized in that: The first reflective structure includes at least one period of the first composite layer, the second reflective structure includes at least two periods of the first composite layer, and the number of periods of the second reflective structure is greater than the number of periods of the first reflective structure; The first composite layer includes a first inorganic material layer and a second inorganic material layer which are stacked, and the refractive index of the first inorganic material is greater than the refractive index of the second inorganic material.

3. The light emitting diode device according to claim 2, characterized in that: The thickness of the first inorganic material layer in the first composite layer is in the range of 40 nm to 50 nm, and the thickness of the second inorganic material layer in the first composite layer is in the range of 72 nm to 82 nm.

4. The light emitting diode device according to claim 2, characterized in that: The first reflective structure includes two periods of the first composite layer.

5. The light emitting diode device according to claim 4, characterized in that: The period number of the first composite layer in the second reflective structure is 4-7.

6. The light emitting diode device according to claim 2, characterized in that: The reflective layer includes a first sub-reflective layer, and an etch stop layer and a second sub-reflective layer which are sequentially arranged on a side of the first sub-reflective layer away from the light emitting structure layer, the first sub-reflective layer is located in the blue sub-pixel region and the at least one non-blue sub-pixel region, the etch stop layer is at least located in the blue sub-pixel region, the second sub-reflective layer is located in the at least one non-blue sub-pixel region, the first sub-reflective layer includes at least one period of the first composite layer, and the second sub-reflective layer includes at least one period of the first composite layer; The first reflective structure includes the first sub-reflective layer located in the blue sub-pixel region, and the second reflective structure includes the first sub-reflective layer and the second sub-reflective layer located in the at least one non-blue sub-pixel region.

7. The light emitting diode device according to claim 1, characterized in that: The first reflective structure includes at least two periods of the second composite layer, and the second reflective structure includes at least three periods of the first composite layer; Among them, the first composite layer includes a first inorganic material layer and a second inorganic material layer arranged in a stacked manner, the second composite layer includes a first inorganic material layer and a second inorganic material layer arranged in a stacked manner, the refractive index of the first inorganic material is greater than the refractive index of the second inorganic material, and the thickness of the first inorganic material layer and the second inorganic material layer in the first composite layer is different from the thickness of the first inorganic material layer and the second inorganic material layer in the second composite layer.

8. The light emitting diode device according to claim 7, characterized in that: The thickness of the first inorganic material layer in the first composite layer is in the range of 40 nm to 50 nm, and the thickness of the second inorganic material layer in the first composite layer is in the range of 72 nm to 82 nm; and / or, The thickness of the first inorganic material layer in the second composite layer is in the range of 53 nm to 63 nm, and the thickness of the second inorganic material layer in the second composite layer is in the range of 95 nm to 105 nm.

9. The light emitting diode device according to claim 7, characterized in that: A thickness difference between the thickness of the first reflective structure and the thickness of the second reflective structure is less than or equal to 120 nm.

10. The light emitting diode device according to claim 8, characterized in that: The first reflective structure includes six periods of the second composite layer, and the second reflective structure includes seven periods of the first composite layer.

11. The light emitting diode device according to any one of claims 2 to 10, characterized in that: The refractive index of the first inorganic material is in the range of 2-3, and the refractive index of the second inorganic material is in the range of 1-2.

12. The light emitting diode device according to any one of claims 1 to 10, characterized in that: The light emitting diode device further comprises a first color conversion layer and at least one second color conversion layer, wherein the first color conversion layer is located in the blue sub-pixel region, the at least one second color conversion layer is located in the at least one non-blue sub-pixel region, and the first color conversion layer and the at least one second color conversion layer are both located on a side of the light emitting structure layer away from the reflective layer; The first color conversion layer is used to convert blue light of a first wavelength reflected by the first reflective structure into blue light of a second wavelength, where the second wavelength is greater than the first wavelength, and the second color conversion layer is used to convert light reflected by the second reflective structure into non-blue light.

13. A method for preparing a light emitting diode device, characterized in that: The light-emitting diode device comprises a blue sub-pixel region and at least one non-blue sub-pixel region, the light-emitting diode device comprises a light-emitting structure layer and a reflective layer, the light-emitting structure layer comprises a first semiconductor layer, a quantum well layer, and a second semiconductor layer which are located in each sub-pixel region and are stacked in sequence; The method for preparing the light emitting diode device includes a method for preparing the reflective layer, and the method for preparing the reflective layer includes: forming a first sub-reflection layer, wherein the first sub-reflection layer is located in the blue sub-pixel region and the at least one non-blue sub-pixel region; forming an etch stop layer on one side of the first sub-reflection layer, wherein the etch stop layer is at least located in the blue sub-pixel region; A second sub-reflection film is formed on a side of the etching stop layer away from the first sub-reflection layer, the second sub-reflection film is located in the blue sub-pixel region and the at least one non-blue sub-pixel region, and the second sub-reflection film located in the blue sub-pixel region is removed by an etching process, and the second sub-reflection film located in the at least one non-blue sub-pixel region forms a second sub-reflection layer; Among them, the first reflective structure includes the first sub-reflective layer located in the blue sub-pixel area, the second reflective structure includes the first sub-reflective layer and the second sub-reflective layer located in the at least one non-blue sub-pixel area, and the reflectivity of the first reflective structure to blue light is less than the reflectivity of the second reflective structure to blue light.

14. A method for preparing a light emitting diode device, characterized in that: The light-emitting diode device comprises a blue sub-pixel region and at least one non-blue sub-pixel region, the light-emitting diode device comprises a light-emitting structure layer and a reflective layer, the light-emitting structure layer comprises a first semiconductor layer, a quantum well layer, and a second semiconductor layer which are located in each sub-pixel region and are stacked in sequence; The method for preparing the light emitting diode device includes a method for preparing the reflective layer, and the method for preparing the reflective layer includes: forming a first photoresist layer, wherein the first photoresist layer is located in the blue sub-pixel region; forming a second reflective film on the first photoresist layer, wherein the second reflective film is located in the blue sub-pixel region and at least one non-blue sub-pixel region; The first photoresist layer and the second reflective film located at the position of the first photoresist layer are removed, and the second reflective film located at the at least one non-blue sub-pixel region forms a second reflective structure; forming a second photoresist layer on the second reflective structure, wherein the second photoresist layer is located in the at least one non-blue sub-pixel region; forming a first reflective film on a side of the second photoresist layer away from the second reflective structure, wherein the first reflective film is located in the blue sub-pixel region and the at least one non-blue sub-pixel region; The second photoresist layer and the first reflective film located at the position of the second photoresist layer are removed, and the first reflective film located in the blue sub-pixel area forms a first reflective structure; The reflectivity of the first reflective structure to blue light is lower than the reflectivity of the second reflective structure to blue light.

15. A display device, characterized in that: It includes a backplane and at least one light-emitting diode device as described in any one of claims 1 to 14, wherein the light-emitting diode device also includes multiple pairs of first electrodes and second electrodes, each pair of the first electrodes and the second electrodes are respectively connected to the first semiconductor layer and the second semiconductor layer in each sub-pixel area, and the light-emitting diode device is connected to the backplane through each pair of the first electrodes and the second electrodes.

16. The display device according to claim 15, characterized in that: The light-emitting diode device further comprises a substrate, the reflective layer is located on a side of the second semiconductor layer away from the quantum well layer, the substrate is located on a side of the first semiconductor layer away from the quantum well layer, the light-emitting diode device further comprises a first color conversion layer and at least one second color conversion layer, the first color conversion layer and the at least one second color conversion layer are both located on a side of the substrate away from the quantum well layer, and the back plate is located on a side of the reflective layer away from the quantum well layer; or, The light-emitting diode device further comprises a substrate, the substrate is located on a side of the first semiconductor layer away from the quantum well layer, the reflective layer is located on a side of the substrate away from the quantum well layer, the back plate is located on a side of the reflective layer away from the quantum well layer, the light-emitting diode device further comprises a first color conversion layer and at least one second color conversion layer, the first color conversion layer and the at least one second color conversion layer are both located on a side of the second semiconductor layer away from the quantum well layer; or, The reflective layer is located on the side of the second semiconductor layer away from the quantum well layer, the first electrode is connected to the first semiconductor layer, the first electrode is located on the side of the first semiconductor layer away from the quantum well layer, the back plate is located on the side of the first electrode away from the quantum well layer, and the light-emitting diode device also includes a first color conversion layer and at least one second color conversion layer, and the first color conversion layer and the at least one second color conversion layer are both located on the side of the back plate away from the quantum well layer.

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