Display device

Abstract

A display device includes a display element on a substrate, a low-reflection layer on the display element, a light-blocking layer on the low-reflection layer, the light-blocking layer defining an opening corresponding to an emission area of the display element, and the light-blocking layer including a bulk portion that absorbs visible light and a light absorber disposed in the bulk portion and that absorbs light in a wavelength band of approximately 380 nanometers (nm) to approximately 500 nm, and a reflection-adjustment layer filling the opening of the light-blocking layer.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to Korean Patent Application No. 10-2021-0029659, filed on March 5, 2021, and all benefits arising therefrom, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The embodiments relate to a display device, and more specifically, to a display device for improving visibility. Background Technology

[0004] Display devices are electronic devices that provide information to users. Because such display devices are thin and light, they can improve user convenience. Summary of the Invention

[0005] However, in existing display devices, visibility deteriorates due to the reflection of external light.

[0006] The embodiments include a display device for improving visibility. However, this is merely an example, and the scope of the invention is not limited thereto.

[0007] Additional features will be set forth in part in the following description and will become apparent in part from the description, or may be learned by practicing the embodiments presented in this invention.

[0008] According to an embodiment of the present invention, a display device includes: a display element on a substrate; a low-reflection layer on the display element; a light-blocking layer on the low-reflection layer, the light-blocking layer defining an opening corresponding to an emission region of the display element, and the light-blocking layer including a main portion for absorbing visible light and a light absorber disposed in the main portion and absorbing light in a wavelength band of about 380 nanometers (nm) to about 500 nm; and a reflection adjustment layer filling the opening of the light-blocking layer.

[0009] In an embodiment, the amount of light absorber per unit volume in the first portion of the light-blocking layer facing the substrate may be less than the amount of light absorber per unit volume in the second portion of the light-blocking layer facing away from the substrate.

[0010] In an embodiment, the surface energy of the light absorber may be less than the surface energy of the material included in the main body portion.

[0011] In an embodiment, the light absorber may include at least one of dyes and pigments.

[0012] In an embodiment, the light absorber may include a yellowish material.

[0013] In some embodiments, the light absorber may include a material having a fluorine substituent.

[0014] In an embodiment, the light absorber may have a transmittance of about 0.5 percent or less for light in the wavelength band of about 400 nm to about 490 nm.

[0015] In an embodiment, the display device may further include: a thin-film encapsulation layer on the low-reflection layer; and a touch sensor layer on the thin-film encapsulation layer, wherein the light-blocking layer may be located on the touch sensor layer.

[0016] In an embodiment, the light-blocking layer may further include a protective agent having a surface energy smaller than that of the light absorber.

[0017] In an embodiment, the light-blocking layer may further include a first portion facing the substrate, a second portion facing away from the substrate, and a third portion between the first portion and the second portion, wherein the amount of light absorber per unit volume in the third portion may be greater than the amount of light absorber per unit volume in the first portion or the second portion, and the amount of protective agent per unit volume in the second portion may be greater than the amount of protective agent per unit volume in the first portion or the third portion.

[0018] According to an embodiment of the present invention, a display device includes: a first display element, a second display element, and a third display element, the first display element, the second display element, and the third display element being on a substrate and emitting light of different colors from each other; a low-reflection layer integrally disposed on the first to third display elements, the low-reflection layer being a single body in its entirety; a light-blocking layer on the low-reflection layer, the light-blocking layer defining openings corresponding to the emission regions of the first to third display elements, and the light-blocking layer including a main portion for absorbing visible light and a light absorber disposed in the main portion for absorbing light in a wavelength band of approximately 380 nm to approximately 500 nm; and a reflection adjustment layer filling the openings of the light-blocking layer, and being a single body in its entirety corresponding to the first to third display elements.

[0019] In an embodiment, the amount of light absorber per unit volume in the first portion of the light-blocking layer facing the substrate may be less than the amount of light absorber per unit volume in the second portion of the light-blocking layer facing away from the substrate.

[0020] In an embodiment, the surface energy of the light absorber may be less than the surface energy of the material included in the main body portion.

[0021] In an embodiment, the light absorber may include at least one of dyes and pigments.

[0022] In one embodiment, the light absorber may include a yellow material.

[0023] In some embodiments, the light absorber may include a material having a fluorine substituent.

[0024] In an embodiment, the light absorber may have a transmittance of about 0.5% or less for light in the wavelength band of about 400 nm to about 490 nm.

[0025] In an embodiment, the display device may further include: a thin-film encapsulation layer on the low-reflection layer; and a touch sensor layer on the thin-film encapsulation layer, wherein the light-blocking layer may be located on the touch sensor layer.

[0026] In an embodiment, the light-blocking layer may further include a protective agent having a surface energy smaller than that of the light absorber.

[0027] In an embodiment, the light-blocking layer may further include a first portion facing the substrate, a second portion facing away from the substrate, and a third portion between the first portion and the second portion, wherein the amount of light absorber per unit volume in the third portion may be greater than the amount of light absorber per unit volume in the first portion or the second portion, and the amount of protective agent per unit volume in the second portion may be greater than the amount of protective agent per unit volume in the first portion or the third portion.

[0028] Other embodiments, features, and advantages of the invention will be better understood through the accompanying drawings, the scope of claims, and the detailed description. Attached Figure Description

[0029] The above and other embodiments, features, and advantages of the present invention will become more apparent from the following description taken in conjunction with the accompanying drawings, wherein:

[0030] Figure 1 This is a schematic plan view of an embodiment of the display device;

[0031] Figure 2 This is an equivalent circuit diagram of an embodiment of a pixel circuit that drives an organic light-emitting diode;

[0032] Figure 3AThis is an enlarged plan view of a portion of an embodiment of the display device;

[0033] Figure 3B This is an enlarged plan view of a portion of another embodiment of the display device;

[0034] Figure 4A This is a schematic cross-sectional view of an embodiment of the display device;

[0035] Figure 4B This is a schematic cross-sectional view of another embodiment of the display device;

[0036] Figure 5 This is a graph showing the transmittance of an embodiment of the reflectance adjustment layer;

[0037] Figure 6A and Figure 6B This is a cross-sectional view of an embodiment of the display device;

[0038] Figure 7A and Figure 7B This is a cross-sectional view of an embodiment of the display device;

[0039] Figure 8 It is a graph showing the reflectivity of the light-blocking layer itself; and

[0040] Figure 9 and Figure 10 It is a graph showing the reflectivity of the display panel. Detailed Implementation

[0041] Reference will now be made in detail to embodiments, examples of which are shown in the accompanying drawings, wherein the same reference numerals always denote the same elements. In this respect, embodiments may take different forms and should not be construed as limited to the description set forth herein. Therefore, the embodiments are described below solely by reference to the accompanying drawings to explain the described features. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. Throughout the disclosure, the expression “at least one of a, b, and c” means only a, only b, only c, both a and b, both a and c, both b and c, all a, b, and c, or variations thereof.

[0042] Because the description allows for various variations and multiple embodiments, specific embodiments will be shown in the accompanying drawings and described in detail in the written description. The effects and features of this disclosure, as well as methods of achieving them, will be illustrated with reference to the embodiments described in detail below with reference to the accompanying drawings. However, this disclosure is not limited to the following embodiments and can be embodied in various forms.

[0043] Embodiments of the present disclosure will now be described in more detail with reference to the accompanying drawings. Identical or corresponding elements are given the same reference numerals regardless of the drawing number, and redundant explanations are omitted.

[0044] It will be understood that while the terms “first,” “second,” etc., may be used in this document to describe various elements, these elements should not be limited by these terms. These terms are used only to distinguish one element from another.

[0045] As used herein, unless the context clearly indicates otherwise, the singular forms “a,” “an,” and “the” are also intended to include the plural forms.

[0046] It will be further understood that the terms “comprising” and / or “including” as used herein indicate the presence of the said feature or element, but do not preclude the presence or addition of one or more other features or other elements.

[0047] It will be further understood that when a layer, region, or element is referred to as being "on" another layer, region, or element, the layer, region, or element may be directly or indirectly on the other layer, region, or element. That is, for example, intermediary layers, intermediary regions, or intermediary elements may exist.

[0048] Furthermore, for ease of explanation, the dimensions of elements in the accompanying drawings may be exaggerated or reduced. For example, since the dimensions and thicknesses of elements in the drawings are arbitrarily shown for ease of illustration, this disclosure is not limited thereto.

[0049] When a particular embodiment can be implemented differently, a particular process sequence can be performed in a different order than that described. For example, two consecutively described processes can be performed substantially simultaneously, or in the reverse order of their description.

[0050] In this specification, the expression "A and / or B" means only A, only B, or both A and B. The expression "at least one of A and B" means only A, only B, or both A and B.

[0051] It will be further understood that when layers, areas, or components are also referred to as being interconnected, they can be directly interconnected or indirectly interconnected through intervening layers, areas, or components. For example, when layers, areas, or components are referred to as being electrically interconnected, they can be directly electrically interconnected or indirectly electrically interconnected through intervening layers, areas, or components.

[0052] The x-axis, y-axis, and z-axis are not limited to the three axes of a Cartesian coordinate system and can be interpreted in a broader sense. For example, the x-axis, y-axis, and z-axis can be perpendicular to each other, or they can represent different directions that are not perpendicular to each other.

[0053] Given the measurements discussed and the errors associated with a particular number of measurements (i.e., the limitations of the measurement system), the terms “about” or “approximately” as used herein include stated values ​​and indicate an acceptable range of deviation from a particular value as determined by one of ordinary skill in the art. For example, the term “about” may mean within one or more standard deviations, or within ±30%, ±20%, ±10%, or ±5% of the stated value.

[0054] Figure 1 This is a schematic plan view of an embodiment of the display device. (As shown in...) Figure 1 As shown, the display device in the illustrated embodiment includes a display panel 10. Any display device can be used as long as it includes a display panel 10. In this embodiment, the display device can be a variety of devices, such as a smartphone, tablet PC, laptop computer, television set, or billboard.

[0055] The display panel 10 may include a display area DA and a peripheral area PA outside the display area DA. The display area DA has a quadrilateral (e.g., rectangular) shape. Figure 1 As shown in the figure. However, the invention is not limited thereto. The display area DA can have various shapes, such as circles, ellipses, polygons, and specific graphics.

[0056] The display area DA is the portion that displays the image, and multiple sub-pixels PX can be arranged within the display area DA. Each sub-pixel PX can include, for example, an organic light-emitting diode (OLED) (see reference). Figure 2 The display element is a thin-film transistor (TFT). Each sub-pixel PX can emit light, for example, red, green, blue, or white light. Each sub-pixel PX can be connected to a display element including a thin-film transistor (TFT). Figure 4A Pixel circuitry, including storage capacitors, etc. Pixel circuitry can be connected to a scan line SL that transmits scan signals, a data line DL that intersects the scan line SL and transmits data signals, and a drive voltage line PL that applies a drive voltage. The scan line SL can extend in the x-axis direction, and the data line DL and drive voltage line PL can extend in the y-axis direction.

[0057] When the pixel circuit is driven, the sub-pixel PX can emit light. The display area DA can provide a predetermined image through the light emitted from the sub-pixel PX. In this specification, as described above, the sub-pixel PX can be defined as an emitting area EA that emits light of any one color among red, green, blue, and white (see reference). Figure 3A ).

[0058] The peripheral region PA is the area where no sub-pixels PX are arranged, and may be an area where no image is provided. The terminal portion to which the printed circuit board or driver integrated circuit (“IC”) for power lines and driving circuitry for the sub-pixels PX are connected may be arranged in the peripheral region PA.

[0059] Because the display panel 10 includes a substrate 100, the substrate 100 may have a display area DA and a peripheral area PA. In the following text, for ease of explanation, the substrate 100 will be described as having a display area DA and a peripheral area PA.

[0060] In the following description, organic light-emitting display devices will be used to describe embodiments of display devices. However, the display devices according to the present invention are not limited thereto. In embodiments, for example, the display device may include an inorganic light-emitting display device (or an inorganic electroluminescent (“EL”) display device) or a quantum dot light-emitting display device. In embodiments, for example, the emitting layer of the display element in the display device may include an organic material or an inorganic material. Quantum dots may be disposed in the path of light emitted from the emitting layer.

[0061] Figure 2 This is an equivalent circuit diagram of an embodiment of the pixel circuit PC that drives an organic light-emitting diode (OLED). As shown in... Figure 2 As shown, an organic light-emitting diode (OLED) can be connected to a pixel circuit PC. The OLED can emit, for example, red, green, blue, or white light. The pixel circuit PC may include a first thin-film transistor (TFT) T1, a second TFT T2, and a storage capacitor Cst. Each of the first TFT T1 and the second TFT T2 may be an oxide semiconductor TFT having a semiconductor layer comprising an oxide semiconductor, or a silicon semiconductor TFT having a semiconductor layer comprising polycrystalline silicon.

[0062] The first thin-film transistor T1 may include a driving thin-film transistor. The first thin-film transistor T1 may be connected to a driving voltage line PL and a storage capacitor Cst, and may control the driving current flowing from the driving voltage line PL to the organic light-emitting diode (OLED) in response to the voltage value stored in the storage capacitor Cst. The OLED may emit light with a predetermined brightness according to the driving current.

[0063] The second thin-film transistor T2 may include a switching thin-film transistor. The second thin-film transistor T2 may be connected to a data line DL. The second thin-film transistor T2 may transmit data from the data line DL to the first thin-film transistor T1 in response to a switching voltage input from the scan line SL.

[0064] The storage capacitor Cst can be connected to the second thin-film transistor T2 and the drive voltage line PL. The storage capacitor Cst can store a voltage corresponding to the difference between the voltage received from the second thin-film transistor T2 and the first drive voltage ELVDD supplied to the drive voltage line PL.

[0065] An organic light-emitting diode (OLED) may include a first electrode connected to a first thin-film transistor T1 and a second electrode receiving a second driving voltage ELVSS. In one embodiment, the voltage level of the second driving voltage ELVSS may be lower than the voltage level of the first driving voltage ELVDD. In an alternative embodiment, the second electrode of the OLED may be grounded to receive a voltage of 0 volts (V).

[0066] Although Figure 2 The illustration shows a pixel circuit PC comprising two thin-film transistors T1 and T2 and a storage capacitor Cst, but the invention is not limited thereto. In another embodiment, the number of thin-film transistors or the number of storage capacitors can be varied depending on the design of the pixel circuit PC.

[0067] Figure 3A This is an enlarged plan view of a portion of an embodiment of the display device. Figure 3A It can be included in Figure 1 An enlarged plan view of the configuration of the embodiment in region A. Figure 3B This is an enlarged plan view as part of another embodiment of the display device. Figure 3B It can be included in Figure 1 An enlarged plan view of the configuration of another embodiment in region A.

[0068] As in Figure 1 and Figure 3A As shown, the display device may include a plurality of sub-pixels PX. Each sub-pixel PX may be any one of a first sub-pixel PX1, a second sub-pixel PX2, and a third sub-pixel PX3 that emits light of different colors from each other. The first sub-pixel PX1 may emit blue light, the second sub-pixel PX2 may emit green light, and the third sub-pixel PX3 may emit red light. However, the invention is not limited thereto. In embodiments, for example, the first sub-pixel PX1 may emit green light, the second sub-pixel PX2 may emit red light, and the third sub-pixel PX3 may emit blue light.

[0069] In a planar diagram, the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 can have a quadrilateral shape among polygonal shapes. In this case, the polygonal shape (e.g., a quadrilateral shape) includes a shape with rounded vertices. That is, the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 can have a quadrilateral shape with rounded vertices. However, the invention is not limited thereto. In embodiments, the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 can have a circular shape or an elliptical shape.

[0070] The first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 can have different sizes. In an embodiment, for example, the area of ​​the second sub-pixel PX2 can be smaller than the area of ​​the first sub-pixel PX1 and the area of ​​the third sub-pixel PX3. However, the invention is not limited thereto. In an embodiment, for example, the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 can have substantially the same size.

[0071] In this specification, the dimensions of the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 can refer to the dimensions of each sub-pixel PX (see reference). Figure 1 The size of the emission area EA of the display element. The emission area EA can be defined by a pixel-defined layer (see [reference]). Figure 4A The opening of 209) (refer to) Figure 4A (OP) limited.

[0072] With sub-pixel PX (reference) Figure 1 The corresponding opening 510_OP can be defined within the light-blocking layer 510 that absorbs external light. The opening 510_OP can be a region provided by removing a portion of the light-blocking layer 510. Light from the display element can be emitted to the outside through the opening 510_OP. The light-blocking layer 510 can include a material that absorbs external light, and therefore, the visibility of the display device can be improved.

[0073] In a plan view, the opening 510_OP of the light-blocking layer 510 can be arranged around sub-pixels PX1, PX2, and PX3. In an embodiment, the opening 510_OP of the light-blocking layer 510 can have a quadrilateral (e.g., rectangular) shape with rounded vertices. The area of ​​the opening 510_OP can be larger than the area of ​​the corresponding sub-pixels PX1, PX2, and PX3. However, the invention is not limited thereto. The area of ​​the opening 510_OP can be substantially the same as the area of ​​the corresponding sub-pixels PX1, PX2, and PX3.

[0074] The first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 can be arranged in a pentile pattern. That is, assuming a virtual quadrilateral VS, where the center point of the second sub-pixel PX2 is the center point of the quadrilateral, the first sub-pixel PX1 can be placed at the first vertex Q1, and the third sub-pixel PX3 can be placed at the second vertex Q2, which is adjacent to the first vertex Q1. Furthermore, the first sub-pixel PX1 can be placed at the third vertex Q3, which is positioned symmetrically to the center point of the virtual quadrilateral VS with respect to the first vertex Q1, and the third sub-pixel PX3 can be placed at the fourth vertex Q4, which is also positioned symmetrically to the center point of the virtual quadrilateral VS with respect to the second vertex Q2. The virtual quadrilateral VS can be a square. The first sub-pixel PX1 and the third sub-pixel PX3 can be arranged alternately along the x-axis and the y-axis, which intersects the x-axis. The second sub-pixel PX2 can be surrounded by the first sub-pixel PX1 and the third sub-pixel PX3.

[0075] Figure 3A The diagram shows a first sub-pixel PX1, a second sub-pixel PX2, and a third sub-pixel PX3 arranged in a pentile pattern. However, the invention is not limited thereto. In embodiments, as shown in... Figure 3B As shown, the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 can be arranged in a striped pattern. That is, for example, the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 can be arranged sequentially in the x-axis direction. In another embodiment, the sub-pixels PX can also be arranged in a mosaic pattern.

[0076] Figure 4A This is a schematic cross-sectional view of an embodiment of the display device. Figure 4B This is a schematic cross-sectional view of another embodiment of the display device. Figure 4A and Figure 4B It is along Figure 3A A cross-sectional view of the display device taken by line IV-IV'. Figure 5 This is a graph showing the transmittance of an embodiment of the reflectance adjustment layer 530.

[0077] As in Figure 4A As shown, the display device in the embodiment may include an organic light-emitting diode (OLED) on a substrate 100, and may have a structure in which a display layer 200, a low-reflection layer 300, a thin-film encapsulation layer 400 and an anti-reflection layer 500 are stacked on the substrate 100.

[0078] The substrate 100 may comprise glass, metal, or polymer resin. When at least a portion of the display device is flexible or bendable, the substrate 100 needs to be flexible or bendable. In this case, for example, the substrate 100 may comprise polymer resins such as polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, or cellulose acetate propionate. In other embodiments, the substrate 100 may be modified in various ways. In one embodiment, for example, the substrate 100 may have a multilayer structure comprising two layers containing the aforementioned polymer resin and a barrier layer between the two layers containing an inorganic material (e.g., silicon oxide, silicon nitride, silicon oxynitride, etc.). Furthermore, when the substrate 100 is inflexible, the substrate 100 may comprise glass, etc.

[0079] The display layer 200 may include a buffer layer 201, a gate insulating layer 203, an intermediate insulating layer 205, a planarization layer 207, a pixel defining layer 209, a spacer 211, an organic light-emitting diode (OLED), and a thin-film transistor (TFT). In an embodiment, the display layer 200 may further include a capping layer 230 on the organic light-emitting diode (OLED).

[0080] Buffer layer 201 may be on substrate 100, reducing or preventing the infiltration of foreign matter, moisture, or ambient air from below substrate 100, and may provide a flat surface on substrate 100. Buffer layer 201 may comprise inorganic materials, organic materials, or organic / inorganic composite materials such as oxides or nitrides, and may have a single-layer or multi-layer structure comprising inorganic and organic materials. A barrier layer (not shown) may also be included between substrate 100 and buffer layer 201 to prevent the infiltration of ambient air. Buffer layer 201 may comprise silicon oxide (SiO2) or silicon nitride (SiN). x ).

[0081] A thin-film transistor (TFT) can be mounted on a buffer layer 201. The TFT may include a semiconductor layer ACT, a gate electrode GE, a source electrode SE, and a drain electrode DE. (e.g., ) Figure 2 The first thin-film transistor T1 shown can be connected to an organic light-emitting diode (OLED) and drive the OLED.

[0082] The semiconductor layer ACT may be on the buffer layer 201 and may include polycrystalline silicon. In another embodiment, the semiconductor layer ACT may include amorphous silicon. In another embodiment, for example, the semiconductor layer ACT may include an oxide comprising at least one of indium (In), gallium (Ga), tin (Sn), zirconium (Zr), vanadium (V), hafnium (Hf), cadmium (Cd), germanium (Ge), chromium (Cr), titanium (Ti), and zinc (Zn). The semiconductor layer ACT may include a channel region and impurity-doped drain and source regions.

[0083] The gate electrode GE, source electrode SE, and drain electrode DE can comprise various conductive materials. The gate electrode GE can comprise at least one of molybdenum, aluminum, copper, and titanium. In embodiments, for example, the gate electrode GE can have a single molybdenum layer or a three-layer structure including a molybdenum layer, an aluminum layer, and a molybdenum layer. The source electrode SE and drain electrode DE can comprise at least one of copper, titanium, and aluminum. In embodiments, for example, the source electrode SE and drain electrode DE can have a three-layer structure, for example, including a titanium layer, an aluminum layer, and a titanium layer.

[0084] To ensure insulation between the semiconductor layer ACT and the gate electrode GE, a gate insulating layer 203 comprising an inorganic material such as silicon oxide, silicon nitride, and / or silicon oxynitride may be provided between the semiconductor layer ACT and the gate electrode GE. Furthermore, an intermediate insulating layer 205 comprising an inorganic material such as silicon oxide, silicon nitride, and / or silicon oxynitride may be provided on the gate electrode GE, and the source electrode SE and drain electrode DE may be provided on the intermediate insulating layer 205. The insulating layer comprising the inorganic material may be formed or provided by chemical vapor deposition (“CVD”) or atomic layer deposition (“ALD”). This also applies to the following embodiments and their modifications.

[0085] The planarization layer 207 can be on a thin-film transistor (TFT). To provide a planar upper surface, chemical and mechanical polishing can be performed on the upper surface of the planarization layer 207 after it is formed or provided. For example, the planarization layer 207 can include organic materials such as acrylic acid, benzocyclobutene (“BCB”), or hexamethyldisiloxane (“HMDSO”). Although Figure 4A The planarization layer 207 is shown to be a single layer, but in another embodiment, the planarization layer 207 may be multiple layers.

[0086] Pixel electrode 221 can be located on planarization layer 207. Pixel electrode 221 can be located for each sub-pixel PX (see reference). Figure 1 The pixel electrodes 221 corresponding to adjacent sub-pixels PX can be spaced apart from each other.

[0087] Pixel electrode 221 may include a reflective electrode. In this case, pixel electrode 221 may include a reflective layer and a transparent or translucent electrode layer on the reflective layer, said reflective layer comprising silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), or any combination thereof. The transparent or translucent electrode layer may include at least one selected from indium tin oxide (“ITO”), indium zinc oxide (“IZO”), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (“IGO”), and aluminum zinc oxide (“AZO”). In embodiments, for example, pixel electrode 221 may have an ITO / Ag / ITO stacked structure.

[0088] Pixel defining layer 209 can be located on planarization layer 207 and pixel electrode 221. An opening OP exposing the central portion of pixel electrode 221 can be defined within pixel defining layer 209. Pixel defining layer 209 can cover the edge of pixel electrode 221 and prevent arcing or similar phenomena at the edge of pixel electrode 221 by increasing the distance between the edge of pixel electrode 221 and counter electrode 223. For example, pixel defining layer 209 can comprise an organic material such as polyimide or HMDSO.

[0089] In some embodiments, the pixel defining layer 209 may include a light-blocking material. The light-blocking material may include carbon black, carbon nanotubes, a resin or paste containing a black dye, metal particles (e.g., nickel, aluminum, molybdenum, and alloys thereof), metal oxide particles (e.g., chromium oxide), or metal nitride particles (e.g., chromium nitride). The arrangement of the pixel defining layer 209 including the light-blocking material can reduce the reflection of external light caused by the metal structure beneath the pixel defining layer 209.

[0090] The intermediate layer 222 can be on the pixel electrode 221 and the pixel defining layer 209. The intermediate layer 222 may include a first common layer 222a, an emission layer 222b, and a second common layer 222c.

[0091] The emitting layer 222b can be disposed inside the opening OP of the pixel defining layer 209. The emitting layer 222b may include an organic material containing a fluorescent or phosphorescent material capable of emitting blue, green, or red light. The organic material may include low molecular weight organic materials or high molecular weight organic materials.

[0092] The first common layer 222a and the second common layer 222c may be located below and above the emitter layer 222b, respectively. For example, the first common layer 222a may include a hole transport layer (“HTL”), or may include an HTL and a hole injection layer (“HIL”). For example, the second common layer 222c may include an electron transport layer (“ETL”), or may include an ETL and an electron injection layer (“EIL”). In some embodiments, the second common layer 222c may not be provided.

[0093] Although the emission layer 222b is arranged to correspond to the opening OP of the pixel defining layer 209 for each pixel, the first common layer 222a and the second common layer 222c can be used as a single entity to completely cover the substrate 100. In other words, the first common layer 222a and the second common layer 222c can be used as a single entity to completely cover the display area DA of the substrate 100 (see reference). Figure 1 ).

[0094] Counter electrode 223 can be a cathode serving as an electron injection electrode. Counter electrode 223 can include a conductive material with a low work function. In embodiments, for example, counter electrode 223 can include a (semi-)transparent layer comprising silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), or any alloy thereof. In alternative embodiments, counter electrode 223 may also include a layer such as ITO, IZO, ZnO, or In2O3 on the (semi-)transparent layer comprising the aforementioned materials. The layer from pixel electrode 221 to counter electrode 223 can constitute an organic light-emitting diode (OLED).

[0095] Spacer 211 may be on pixel defining layer 209. Spacer 211 can prevent the layer between substrate 100 and spacer 211 from being damaged by the mask used in the process of forming emissive layer 222b. Spacer 211 may include the same material as pixel defining layer 209. In some embodiments, spacer 211 may include light-blocking material.

[0096] In an embodiment, the display device may further include a capping layer 230 on an organic light-emitting diode (OLED). Based on the principle of constructive interference, the capping layer 230 can improve the luminous efficiency of the OLED. For example, the capping layer 230 may include a material exhibiting a refractive index of 1.6 or greater for light with a wavelength of approximately 589 nanometers (nm). The capping layer 230 may have a thickness of approximately 1 nm to approximately 200 nm along the z-axis. In an embodiment, for example, the capping layer 230 may have a thickness of approximately 5 nm to approximately 150 nm, or approximately 10 nm to approximately 100 nm.

[0097] The capping layer 230 may include an organic capping layer containing organic materials, an inorganic capping layer containing inorganic materials, or a composite capping layer containing both organic and inorganic materials. In embodiments, for example, the capping layer 230 may include carbocyclic compounds, heterocyclic compounds, amino-containing compounds, porphyrin derivatives, phthalocyanine derivatives, naphthylphthalocyanine derivatives, alkali metal complexes, alkaline earth metal complexes, or any combination thereof. The carbocyclic compounds, heterocyclic compounds, and amino-containing compounds may optionally be substituted with substituents including oxygen (O), nitrogen (N), sulfur (S), selenium (Se), silicon (Si), fluorine (F), chlorine (Cl), bromine (Br), iodine (I), or any combination thereof.

[0098] The low-reflection layer 300 may be on the capping layer 230. Since the capping layer 230 may be on the display element, the low-reflection layer 300 may also be on the display element. The low-reflection layer 300 may include an inorganic material with low reflectivity. The low-reflection layer 300 may include ytterbium (Yb), bismuth (Bi), cobalt (Co), molybdenum (Mo), titanium (Ti), zirconium (Zr), aluminum (Al), chromium (Cr), niobium (Nb), platinum (Pt), tungsten (W), indium (In), tin (Sn), iron (Fe), nickel (Ni), tantalum (Ta), manganese (Mn), zinc (Zn), germanium (Ge), or any combination thereof. The inorganic material included in the low-reflection layer 300 may have an absorption coefficient of about 0.5 or greater. In an embodiment, the inorganic material included in the low-reflection layer 300 may have a refractive index of about 1 or greater. In an embodiment, the low-reflection layer 300 may have a thickness from about 0.1 nm to about 50 nm.

[0099] The low-reflection layer 300 reduces the reflectivity of external light by introducing destructive interference between the light incident on the interior of the display device and the light reflected from the metal below the opening OP. The low-reflection layer 300 improves the display quality and visibility of the display device by reducing the reflection of external light.

[0100] The thin-film encapsulation layer 400 may be on the low-reflection layer 300. The thin-film encapsulation layer 400 may include at least one inorganic encapsulation layer and at least one organic encapsulation layer. In embodiments, such as in... Figure 4A As shown, for example, the thin-film encapsulation layer 400 may include a first inorganic encapsulation layer 410, an organic encapsulation layer 420, and a second inorganic encapsulation layer 430.

[0101] The first inorganic encapsulation layer 410 and the second inorganic encapsulation layer 430 may include materials such as silicon oxide (SiO2) and silicon nitride (SiN). x ), silicon oxynitride (SiO) x N yAluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2), or zinc oxide (ZnO) x It can be an inorganic insulating material (ZnO or ZnO2). The first inorganic encapsulation layer 410 and the second inorganic encapsulation layer 430 can have a single-layer structure or a multi-layer structure including the above-mentioned inorganic insulating material.

[0102] The organic encapsulation layer 420 can alleviate the internal stress of the first inorganic encapsulation layer 410 and / or the second inorganic encapsulation layer 430. The organic encapsulation layer 420 may include a polymer-based material. The polymer-based material may include polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polysulfonate, polyoxymethylene, polyarylate, HMDSO, acrylic resin (e.g., polymethyl methacrylate, polyacrylic acid, etc.) or any combination thereof.

[0103] Organic encapsulation layer 420 can be formed or provided by coating a flowable material comprising monomers and then reacting the monomers to form a polymer by bonding them with heat or light (such as ultraviolet light). Alternatively, organic encapsulation layer 420 can be formed or provided by coating a polymer material.

[0104] Through the aforementioned multi-layer structure, even if a crack occurs in the thin-film encapsulation layer 400, the thin-film encapsulation layer 400 can prevent the crack from connecting between the first inorganic encapsulation layer 410 and the organic encapsulation layer 420, or between the organic encapsulation layer 420 and the second inorganic encapsulation layer 430. Therefore, it is possible to prevent or minimize the penetration of external moisture or oxygen into the display area DA (refer to...). Figure 1 The formation of the path traversed in ).

[0105] An antireflective layer 500 may be on the thin-film encapsulation layer 400. The antireflective layer 500 may include a light-blocking layer 510 and a reflection adjustment layer 530. The light-blocking layer 510 defines an opening 510_OP that overlaps with the emission region EA of the display element, and the reflection adjustment layer 530 fills the opening 510_OP of the light-blocking layer 510. The light-blocking layer 510 may be on the thin-film encapsulation layer 400 and may include a body portion 511 and a light absorber 512 disposed within the body portion 511. Because the thin-film encapsulation layer 400 is on the low-reflection layer 300, the light-blocking layer 510 may be on the low-reflection layer 300. In some embodiments, the opening 510_OP of the light-blocking layer 510 may overlap with the opening OP of the pixel defining layer 209, but the second width W2 of the opening 510_OP of the light-blocking layer 510 may be greater than the first width W1 of the opening OP of the pixel defining layer 209.

[0106] The main body portion 511 is a portion distinct from the opening 510_OP of the light-blocking layer 510, and may refer to a portion having a predetermined volume. The main body portion 511 can absorb visible light. In other words, the main body portion 511 may comprise a material that typically absorbs light in the wavelength band of approximately 380 nm to approximately 780 nm. Therefore, the main body portion 511 may have a gray or near-black color. The main body portion 511 may comprise carbon black, carbon nanotubes, resins or pastes including black dyes, metal particles (e.g., nickel, aluminum, molybdenum, and alloys thereof), metal oxide particles (e.g., chromium oxide), or metal nitride particles (e.g., chromium nitride).

[0107] A light absorber 512 is disposed in the main body portion 511 and can absorb light in the wavelength band of approximately 380 nm to approximately 500 nm. That is, the light absorber 512 can absorb light in the blue light wavelength band. The light absorber 512 may include dyes, pigments, or combinations thereof. The absorption spectrum of the dye or pigment included in the light absorber 512 may have a peak in the wavelength band of approximately 500 nm or less. Therefore, the dye or pigment may include a yellowish material. That is, the light absorber 512 may include a yellowish material. In some embodiments, the light absorber 512 may have a transmittance of approximately 0.5% or less for light in the wavelength band of approximately 400 nm to approximately 490 nm. When using a light absorber 512 with the above-mentioned transmittance, the color perception of the reflection of the display device can be easily adjusted.

[0108] External light incident on the display device may escape from the display panel 10 (see reference). Figure 1Reflection affects the color perception of the image provided by the display panel 10. In an embodiment, for example, when light of a predetermined wavelength is reflected to a greater extent than light of another wavelength is reflected, the reflected light may appear to have the color of the light of that predetermined wavelength as a whole. Therefore, to improve the display quality of the display device, it may be necessary to adjust the reflected color perception. For this purpose, the light absorber 512 needs to be arranged close to the upper surface of the light-blocking layer 510. The light-blocking layer 510 can be formed or provided by coating a light-blocking layer resin including the light absorber 512 onto the thin film encapsulation layer 400, and then performing an exposure process and a development process thereon. During the exposure process, the light absorber 512 can float within the light-blocking layer resin near the upper surface of the light-blocking layer resin. The light-blocking layer resin cured during the exposure process can form the body portion 511. Through these processes, the light-blocking layer 510 in this embodiment can be formed or provided. The amount of light absorber 512 per unit volume in the first portion of the light-blocking layer 510 facing the substrate 100 (e.g., facing the bottom of the display device in the -z-axis direction) can be less than the amount of light absorber 512 per unit volume in the second portion of the light-blocking layer 510 facing away from the substrate 100 (e.g., facing the top of the display device in the +z-axis direction). In other words, the concentration of light absorber 512 can increase towards the upper part (+z-axis direction) of the light-blocking layer 510.

[0109] The surface energy of the light absorber 512 can be less than the surface energy of the material included in the body portion 511. In this case, during the exposure process, the light absorber 512 can float near the upper surface of the light-blocking layer resin. The material included in the body portion 511 can have a surface energy of approximately 40 dynes per centimeter (dyne / cm) to approximately 45 dyne / cm. Therefore, the light absorber 512 can have a surface energy of less than 40 dyne / cm. In embodiments, for example, the light absorber 512 can have a surface energy of approximately 15 dyne / cm to approximately 28 dyne / cm. The surface energy decreases when fluorine substituents are bonded to the polymer constituting the light absorber 512. Therefore, to make the light absorber 512 have a low surface energy, the light absorber 512 can include a material having fluorine substituents.

[0110] As described above, by arranging a light-blocking layer 510 including a light absorber 512 on the thin-film encapsulation layer 400, the main body 511 can absorb visible light as a whole, and the light absorber 512 can additionally absorb light in the short wavelength band (i.e., the blue light wavelength band). Therefore, the reflected color perception can be improved by reducing the reflectivity of external light and preventing the reflected light from containing too much light in the blue light wavelength band.

[0111] In another embodiment, such as in Figure 4BAs shown, the light-blocking layer 510 may further include a light absorber 512 disposed within the main body portion 511, and a protective agent 513 having a surface energy lower than that of the light absorber 512 and capable of protecting the light absorber 512. The protective agent 513 may be developer-resistant. That is, the protective agent 513 may not dissolve in the developer. When forming or providing the light-blocking layer pattern, an exposure process and a development process may be performed. In this case, if the light absorber 512 is not developer-resistant, it may be removed by dissolving it in a developer such as tetramethylammonium hydroxide (“TMAH”) or KOH during the development process. Therefore, to prevent this problem, the portion having the highest concentration of the protective agent 513 may be placed above the portion having the highest concentration of the light absorber 512 during the exposure process. For this purpose, the surface energy of the protective agent 513 may be lower than that of the light absorber 512. In an embodiment, the protective agent 513 may have a surface energy of approximately 12 dyne / cm to approximately 25 dyne / cm. To achieve such surface energy, for example, the protective agent 513 may comprise a polymeric material having fluorine-substituent groups. In embodiments, for example, the protective agent 513 may comprise a non-hydrolyzable polymeric material such as a perfluoropolyether (“PFPE”).

[0112] The light-blocking layer 510 formed or provided as described above may include a light absorber 512 and a protective agent 513 in the main body portion 511. The light-blocking layer 510 may include a first portion facing the substrate 100 (e.g., facing the bottom of the display device in the -z-axis direction), a second portion facing away from the substrate 100 (e.g., facing the top of the display device in the +z-axis direction), and a third portion between the first and second portions. In this case, the amount of light absorber 512 per unit volume in the third portion may be greater than the amount of light absorber 512 per unit volume in the first or second portion. Furthermore, the amount of protective agent 513 per unit volume in the second portion may be greater than the amount of protective agent 513 per unit volume in the first or third portion. In other words, the portion having the highest concentration of protective agent 513 may be positioned closer to the upper part of the light-blocking layer 510, and the portion having the highest concentration of light absorber 512 may be positioned relatively closer to the substrate 100 compared to the portion having the highest concentration of protective agent 513 up to the substrate 100. Therefore, during the developing process, the protectant 513 can prevent a large amount of light absorber 512 from dissolving in the developer and being removed.

[0113] In this way, a protective agent 513 is required to prevent the light absorber 512 from being removed during the development process. However, when the light absorber 512 is resistant to development, the light-blocking layer 510 may not include the protective agent 513.

[0114] The reflection adjustment layer 530 can fill the opening 510_OP of the light blocking layer 510. That is, the reflection adjustment layer 530 can be on the thin film encapsulation layer 400 and the light blocking layer 510. The reflection adjustment layer 530 can absorb light with certain wavelengths from light reflected from the inside of the display device or from light incident from the outside of the display device.

[0115] As in Figure 5 The diagram illustrates an embodiment of the transmittance of a reflectance adjustment layer 530 provided in a display device. The reflectance adjustment layer 530 can absorb light in a first wavelength band of approximately 480 nm to approximately 505 nm and light in a second wavelength band of approximately 585 nm to approximately 605 nm. For light in the first and second wavelength bands, the transmittance of the reflectance adjustment layer 530 can be approximately 40% or less. That is, the reflectance adjustment layer 530 can absorb light with wavelengths that do not belong to the red, green, or blue light bands of an organic light-emitting diode (OLED). The reflectance measured on the surface of the reflectance adjustment layer 530 in a specular reflection (“SCI”) mode can be approximately 10% or less. Because the reflectance adjustment layer 530 absorbs reflected external light, the transmittance of light from the display panel 10 (see reference 10) can be increased. Figure 1 The visibility of the image provided.

[0116] The reflection adjustment layer 530 may be provided as an organic material layer comprising dyes, pigments, or combinations thereof. The reflection adjustment layer 530 may include oxazine-based compounds, anthocyanin-based compounds, tetrazaporphyrin-based compounds, and squaric acid-based compounds. In embodiments, for example, the reflection adjustment layer 530 may include compounds represented by one of the following chemical formulas 1 to 4.

[0117] <Chemical Formula 1>

[0118]

[0119] <Chemical Formula 2>

[0120]

[0121] <Chemical Formula 3>

[0122]

[0123] <Chemical Formula 4>

[0124]

[0125] In chemical formulas 1 through 4, M is a metal, and X - It is a monovalent anion. R may be the same as or different from each other, and may each include: (i) hydrogen, deuterium (-D), -F, -Cl, -Br, -I, hydroxyl, cyano or nitro; (ii) C1-C60 Alkyl, C2-C 60 alkenyl, C2-C 60 alkynyl or C1-C 60 Alkyl groups, each unsubstituted or substituted with deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy group, C6-C 60 Arylthioyl, -Si(Q) 11 (Q) 12 (Q) 13 -N(Q) 11 (Q) 12 -B(Q) 11 (Q) 12 -C(=O)(Q) 11 -S(=O)2(Q) 11 -P(=O)(Q) 11 (Q) 12 (iii) C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy or C6-C 60 Aryl thiols, each unsubstituted or replaced by deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C1-C 60 Alkyl, C2-C 60 alkenyl, C2-C 60 Alkyne group, C1-C 60 Alkoxy, C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy group, C6-C 60 Arylthioyl, -Si(Q) 21 (Q) 22 (Q) 23 -N(Q) 21 (Q) 22 -B(Q) 21 (Q) 22 -C(=O)(Q) 21 -S(=O)2(Q) 21 -P(=O)(Q) 21 (Q) 22 (iv) or any combination thereof; or Si(Q) 31 (Q) 32 (Q) 33 -N(Q) 31 (Q) 32-B(Q) 31 (Q) 32 -C(=O)(Q) 31 -S(=O)2(Q) 31 ) or -P(=O)(Q 31 (Q) 32 ).

[0126] Q1 to Q3, Q 11 To Q 13 Q 21 To Q 23 And Q 31 To Q 33 Each of these can independently include hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C1-C 60 Alkyl, C2-C 60 alkenyl, C2-C 60 Alkyne group, C1-C 60 Alkoxy or C3-C 60 Carbocyclic or C1-C 60 Heterocyclic groups, each unsubstituted or replaced by deuterium, -F, cyano, C1-C 60 Alkyl, C1-C 60 Alkoxy, phenyl, biphenyl, or any combination thereof are used as substitutes.

[0127] In the embodiment, X - It can be a halide ion, carboxylate ion, nitrate ion, sulfonate ion, or hydrogen sulfate ion.

[0128] In an embodiment, for example, X - It can be F - Cl - ,Br - I - CH3COO - NO3 - HSO4 - Propionate ions or benzenesulfonate ions, etc.

[0129] Figure 6A and Figure 6B This is a cross-sectional view of an embodiment of the display device. Figure 6A and Figure 6B In, with Figure 4A and Figure 4B The same reference numerals in the accompanying drawings indicate the same parts, and repeated descriptions of them will be omitted.

[0130] As in Figure 6A and Figure 6BAs shown, the touch sensor layer (TSL) is located between the thin-film encapsulation layer 400 and the light-blocking layer 510. The touch sensor layer (TSL) senses the user's touch input. The touch sensor layer (TSL) can sense the user's touch input using methods such as resistive or capacitive methods.

[0131] The touch sensor layer TSL can be on the thin-film encapsulation layer 400. The touch sensor layer TSL may include a first sub-conductive layer CTL1, a second sub-conductive layer CTL2, and a touch insulating layer 610. In an embodiment, the touch sensor layer TSL may also include a touch buffer layer 601 between the thin-film encapsulation layer 400 and the touch insulating layer 610.

[0132] A touch buffer layer 601 may be present on the thin-film encapsulation layer 400. The touch buffer layer 601 prevents damage to the thin-film encapsulation layer 400 and blocks interference signals that may be generated when the touch sensor layer TSL is driven. The touch buffer layer 601 may include materials such as silicon oxide (SiO2). x ), silicon nitride (SiN) x ) or silicon oxynitride (SiO) x N y The touch buffer layer 601 may have a single-layer or multi-layer structure comprising the aforementioned inorganic insulating material or organic material.

[0133] The first sub-conductive layer CTL1, the touch insulating layer 610, and the second sub-conductive layer CTL2 can be sequentially stacked on the touch buffer layer 601. The first sub-conductive layer CTL1 and the second sub-conductive layer CTL2 can be located below and above the touch insulating layer 610, respectively. The second sub-conductive layer CTL2 can be used as a sensor for sensing user touch input. The first sub-conductive layer CTL1 can be used as a connecting portion for connecting the patterned second sub-conductive layer CTL2 in one direction. In some embodiments, both the first sub-conductive layer CTL1 and the second sub-conductive layer CTL2 can be used as sensors. In this case, the first sub-conductive layer CTL1 and the second sub-conductive layer CTL2 can be electrically connected to each other through the contact hole 605. Thus, when both the first sub-conductive layer CTL1 and the second sub-conductive layer CTL2 are used as sensors, the resistance of the touch electrode is reduced, thereby quickly sensing the user's touch input. In some embodiments, the first sub-conductive layer CTL1 and the second sub-conductive layer CTL2 can have a mesh structure, allowing light emitted from the organic light-emitting diode (OLED) to pass through it. In this case, the first sub-conductive layer CTL1 and the second sub-conductive layer CTL2 can be arranged so as not to overlap with the emission region EA of the organic light-emitting diode OLED.

[0134] The first sub-conductive layer CTL1 and the second sub-conductive layer CTL2 may comprise a metal layer or a transparent conductive layer. The metal layer may comprise molybdenum (Mo), silver (Ag), titanium (Ti), copper (Cu), aluminum (Al), and any alloy thereof. The transparent conductive layer may comprise a transparent conductive oxide such as ITO, IZO, zinc oxide (ZnO), and indium tin zinc oxide (“ITZO”). Furthermore, the transparent conductive layer may comprise a conductive polymer such as poly(3,4-ethylenedioxythiophene) (“PEDOT”), metal nanowires, carbon nanotubes, or graphene.

[0135] The touch insulating layer 610 may comprise inorganic or organic materials. Inorganic materials may include at least one of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, and silicon oxynitride. Organic materials may include at least one of acrylic resin, methacrylic resin, polyisoprene, vinyl resin, epoxy resin, urethane resin, cellulose resin, and perylene resin.

[0136] As in Figure 6A As shown, the light-blocking layer 510, including the light absorber 512 and the main body portion 511, and the reflection adjustment layer 530 can be on the touch sensor layer TSL. In an alternative embodiment, as shown in Figure 6B As shown, the light-blocking layer 510, which includes a light absorber 512, a main body portion 511, and a protective agent 513, and the reflection adjustment layer 530, can reduce external light reflected by the first sub-conductive layer CTL1 and the second sub-conductive layer CTL2 provided in the touch sensor layer TSL.

[0137] For reference only. Figure 6A and Figure 6B The illustration shows a light-blocking layer 510, comprising a light absorber 512 and a main body portion 511, in contact with a touch sensor layer TSL; however, the invention is not limited thereto. In embodiments, for example, an additional touch insulating layer (not shown) may cover the second sub-conductive layer CTL2 and the touch insulating layer 610, and the light-blocking layer 510 comprising the light absorber 512 and the main body portion 511, as well as the reflection adjustment layer 530, may be disposed on the additional touch insulating layer. This also applies to the following embodiments and their modifications. The additional touch insulating layer may comprise inorganic or organic materials. Inorganic materials may comprise at least one of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, and silicon oxynitride. Organic materials may comprise at least one of acrylic resin, methacrylate resin, polyisoprene, vinyl resin, epoxy resin, urethane resin, cellulose resin, and perylene resin. Furthermore, various modifications may be made to the touch sensor layer TSL. In embodiments, for example, the touch sensor layer TSL may not be as... Figure 6Aand Figure 6B The diagram shows two conductive layers: a first sub-conductive layer CTL1 and a second sub-conductive layer CTL2, and may also include a single conductive layer.

[0138] Figure 7A and Figure 7B This is a cross-sectional view of an embodiment of the display device. Figure 7A and Figure 7B It is along Figure 3A A cross-sectional view of the display device taken from line II-II'. Figure 7A and Figure 7B In, with Figure 6A and Figure 6B The same reference numerals in the accompanying drawings indicate the same parts, and repeated descriptions of them will be omitted.

[0139] As in Figure 7A As shown, in the display device of this embodiment, the first organic light-emitting diode (OLED1), the second organic light-emitting diode (OLED2), and the third organic light-emitting diode (OLED3) emitting light of different colors can be disposed on the substrate 100. The low-reflection layer 300 can be integrally disposed as a single entity corresponding to the first organic light-emitting diode (OLED1), the second organic light-emitting diode (OLED2), and the third organic light-emitting diode (OLED3), i.e., disposed on the first organic light-emitting diode (OLED1), the second organic light-emitting diode (OLED2), and the third organic light-emitting diode (OLED3). The thin-film encapsulation layer 400 can be disposed on the low-reflection layer 300. Therefore, the thin-film encapsulation layer 400 can be integrally disposed as a single entity corresponding to the first organic light-emitting diode (OLED1), the second organic light-emitting diode (OLED2), and the third organic light-emitting diode (OLED3), i.e., disposed on the first organic light-emitting diode (OLED1), the second organic light-emitting diode (OLED2), and the third organic light-emitting diode (OLED3). The touch sensor layer (TSL) can be disposed on the thin-film encapsulation layer 400. Therefore, the touch sensor layer TSL can be used as a single entity to correspond to the first organic light-emitting diode OLED1, the second organic light-emitting diode OLED2, and the third organic light-emitting diode OLED3, that is, it can be arranged on the first organic light-emitting diode OLED1, the second organic light-emitting diode OLED2, and the third organic light-emitting diode OLED3.

[0140] The light-blocking layer 510 may be on the touch sensor layer TSL. Furthermore, openings 510_OP may be defined in the light-blocking layer 510, corresponding to the emission regions of the first organic light-emitting diode (OLED1), the second organic light-emitting diode (OLED2), and the third organic light-emitting diode (OLED3), respectively. As described above, the light-blocking layer 510 may include a main portion 511 that absorbs visible light, and a light absorber 512 disposed in the main portion 511 and absorbing light in the wavelength band of approximately 380 nm to approximately 500 nm. The reflection adjustment layer 530 may fill the openings 510_OP of the light-blocking layer 510 and may be integrally formed as a single entity corresponding to the first organic light-emitting diode (OLED1), the second organic light-emitting diode (OLED2), and the third organic light-emitting diode (OLED3), i.e., disposed on the first organic light-emitting diode (OLED1), the second organic light-emitting diode (OLED2), and the third organic light-emitting diode (OLED3). In an embodiment, the display device may further include a cover layer 230 integrally formed or provided as a single entity between the first organic light-emitting diode (OLED1) to the third organic light-emitting diode (OLED3) and the low-reflection layer 300.

[0141] A light absorber 512 is disposed in the main body portion 511 and can absorb light in the wavelength band of approximately 380 nm to approximately 500 nm. That is, the light absorber 512 can absorb light in the blue light wavelength band. The light absorber 512 may include a dye, pigment, or a combination thereof. The absorption spectrum of the dye or pigment included in the light absorber 512 may have an absorption peak in the wavelength band of approximately 500 nm or less. Therefore, the dye or pigment may be yellow. That is, the light absorber 512 may include a yellow material. In some embodiments, the light absorber 512 may have a transmittance of approximately 0.5% or less for light in the wavelength band of approximately 400 nm to approximately 490 nm.

[0142] The amount of light absorber 512 per unit volume in the first portion of the light-blocking layer 510 facing the substrate 100 (e.g., facing the bottom of the display device in the -z-axis direction) can be less than the amount of light absorber 512 per unit volume in the second portion of the light-blocking layer 510 facing away from the substrate 100 (e.g., facing the top of the display device in the +z-axis direction). In other words, the concentration of light absorber 512 can increase towards the upper part (+z-axis direction) of the light-blocking layer 510.

[0143] To achieve such a concentration distribution, the surface energy of the light absorber 512 can be less than the surface energy of the material included in the body portion 511. In embodiments, for example, the material included in the body portion 511 can have a surface energy of approximately 40 dyne / cm to approximately 45 dyne / cm, and the light absorber 512 can have a surface energy of approximately 15 dyne / cm to approximately 28 dyne / cm. To achieve such a surface energy, the light absorber 512 can comprise a material having a fluorine-substituted group.

[0144] As in Figure 7B As shown, when the light absorber 512 does not have development resistance, the light-blocking layer 510 may further include a protective agent 513 having a surface energy lower than that of the light absorber 512. The light-blocking layer 510 may include a first portion facing the substrate 100 (e.g., facing the bottom of the display device in the -z-axis direction), a second portion facing away from the substrate 100 (e.g., facing the top of the display device in the +z-axis direction), and a third portion between the first and second portions. In this case, the amount of light absorber 512 per unit volume in the third portion may be greater than the amount of light absorber 512 per unit volume in either the first or second portion. Furthermore, the amount of protective agent 513 per unit volume in the second portion may be greater than the amount of protective agent 513 per unit volume in either the first or third portion. In other words, the portion with the highest concentration of protective agent 513 may be positioned closer to the upper part of the light-blocking layer 510, and the portion with the highest concentration of light absorber 512 may be positioned relatively closer to the substrate 100 compared to the portion with the highest concentration of protective agent 513 towards the substrate 100.

[0145] Figure 8 This is a graph showing the reflectivity of the light-blocking layer 510 itself. Figure 8 In the diagram, Case 1 shows the reflectivity of the light-blocking layer 510 itself when it does not include the light absorber 512, while Case 2 shows the reflectivity of the light-blocking layer 510 itself when it includes the light absorber 512. From Figure 8 It can be seen that in case 1, the reflectivity of external light in the wavelength band of 380nm to 530nm is approximately 4.5% or more, and in case 2, the reflectivity of external light in the wavelength band of 380nm to 530nm is approximately 4%. As described above, it can be confirmed that when the light-blocking layer 510 includes the light absorber 512, the reflectivity of external light in the short wavelength band is reduced. Therefore, when the light-blocking layer 510 includes the light absorber 512, visibility can be improved.

[0146] Figure 9 and Figure 10 This shows the display panel 10 (see reference). Figure 1The reflectance curve of ( ). Specifically, Figure 9 The graph shows the reflectivity when the display panel 10 does not include the reflectivity adjustment layer 530. Figure 10 The graph shows the reflectivity when the display panel 10 includes the reflectivity adjustment layer 530. Figure 9 and Figure 10 In the diagram, Case 1 shows the reflectivity of the display panel 10 when the light-blocking layer 510 does not include the light absorber 512, and Case 2 shows the reflectivity of the display panel 10 when the light-blocking layer 510 includes the light absorber 512. (Refer to...) Figure 9 and Figure 10 In Case 2, the reflectivity of external light in the wavelength band of 380nm to 530nm is lower than that in Case 1. Furthermore, it can be confirmed that when the display panel 10 includes the reflection adjustment layer 530, the reflectivity of external light in the visible light wavelength band is generally reduced.

[0147] As described above, according to the embodiments, a display device that improves visibility can be realized. The scope of the invention is not limited by this effect.

[0148] It should be understood that the embodiments described herein should be considered descriptive only and not for limiting purposes. The description of features or advantages in each embodiment should generally be considered as other similar features or advantages that may be used in other embodiments. Although embodiments have been described with reference to the accompanying drawings, those skilled in the art will understand that various changes in form and detail may be made without departing from the spirit defined by the scope of the claims.

Claims

1. A display device, wherein, The display device includes: Display element, the display element being on a substrate; A low-reflection layer is provided on the display element. A light-blocking layer, the light-blocking layer being on the low-reflection layer, the light-blocking layer defining an opening corresponding to the emission area of ​​the display element, and the light-blocking layer comprising: The main body portion absorbs visible light; and A light absorber disposed in the main body portion and absorbing light in the wavelength band of 380 nm to 500 nm; and A reflection adjustment layer is provided on the light-blocking layer and fills the openings in the light-blocking layer. The reflection adjustment layer absorbs some of the light reflected from the interior of the display device or the light incident from the exterior of the display device.

2. The display device as claimed in claim 1, wherein, The amount of light absorber per unit volume in the first portion of the light-blocking layer facing the substrate is less than the amount of light absorber per unit volume in the second portion of the light-blocking layer facing away from the substrate; or, the light absorber is arranged close to the upper surface of the light-blocking layer; or, the concentration of the light absorber increases towards the upper part of the light-blocking layer.

3. The display device as claimed in claim 1, wherein, The surface energy of the light absorber is less than the surface energy of the material included in the main body.

4. The display device as claimed in claim 1, wherein, The light absorber includes at least one of dyes and pigments.

5. The display device as claimed in claim 1, wherein, The light absorber includes a yellow material.

6. The display device as claimed in claim 1, wherein, The light absorber includes materials having fluorine substituents.

7. The display device as claimed in claim 1, wherein, For light in the wavelength band of 400 nm to 490 nm, the light absorber has a transmittance of 0.5 percent or less.

8. The display device as claimed in claim 1, wherein, The display device further includes: A thin-film encapsulation layer, the thin-film encapsulation layer being on the low-reflection layer; and A touch sensor layer is located on the thin-film encapsulation layer. The light-blocking layer is located on the touch sensor layer.

9. The display device as claimed in claim 1, wherein, The light-blocking layer also includes a protective agent having a surface energy smaller than that of the light absorber.

10. The display device of claim 9, wherein, The light-blocking layer further includes a first portion facing the substrate, a second portion facing away from the substrate, and a third portion between the first portion and the second portion. The amount of light absorber per unit volume in the third portion is greater than the amount of light absorber per unit volume in the first or second portion, and The amount of the protective agent per unit volume in the second part is greater than the amount of the protective agent per unit volume in the first part or the third part.

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