Miniature metamaterial absorber

Abstract

In some embodiments, a metamaterial absorber (MMA) is configured to absorb a particular range of electromagnetic radiation. The MMA includes a first metallic material or a first semiconductor material; a dielectric material disposed on the first metallic material or the first semiconductor material; and a second metallic material disposed on the dielectric material. A length dimension associated with the MMA is less than or equal to 200 micrometers (pm), a width dimension associated with the MMA is less than or equal to 200 pm, and a thickness dimension associated with the MMA is less than or equal to 8 pm.

Description

[0001] Related applications

[0002] This application claims priority to U.S. Provisional Patent Application No. 63 / 157,493, filed March 5, 2021, concerning “ELECTROMAGNETIC ENERGY ABSORBING METAMATERIALS AND COATINGS,” the contents of which are incorporated herein by reference in their entirety. background

[0003] Electromagnetic shielding reflects or absorbs electromagnetic waves. For example, absorptive electromagnetic shielding can absorb electromagnetic waves impacting the surface of the shield, thereby dissipating the electromagnetic waves and converting them into another type of energy, such as heat.

[0004] Overview

[0005] In some embodiments, the metamaterial absorber (MMA) is configured to absorb a specific range of electromagnetic radiation. The MMA includes a first metallic material or a first semiconductor material; a dielectric material disposed on the first metallic material or the first semiconductor material; and a second metallic material disposed on the dielectric material, wherein: the length dimension associated with the MMA is less than or equal to 200 micrometers (μm), the width dimension associated with the MMA is less than or equal to 200 μm, and the thickness dimension associated with the MMA is less than or equal to 8 μm.

[0006] In some embodiments, the coating disposed on the surface of the component includes a first layer comprising more than one MMA disposed within a first adhesive, wherein each of the more than one MMA comprises: a first metallic material or a first semiconductor material; a dielectric material disposed on the first metallic material or the first semiconductor material; and a second metallic material disposed on the dielectric material, wherein: the length dimension associated with the MMA is less than or equal to 200 μm, the width dimension associated with the MMA is less than or equal to 200 μm, and the thickness dimension associated with the MMA is less than or equal to 8 μm.

[0007] In some embodiments, a method includes depositing release material on a resin material using a deposition system, wherein the resin material is embossed with more than one unit cell; depositing a first metal material or a first semiconductor material on the release material using the deposition system; depositing a dielectric material on the first metal material or the first semiconductor material using the deposition system; and depositing a second metal material on the dielectric material using the deposition system, wherein: portions of the first metal material or the first semiconductor material, the dielectric material, and the second metal material deposited on the more than one unit cell respectively form more than one MMA, the length dimension associated with each of the more than one MMA is less than or equal to 200 μm, the width dimension associated with each of the more than one MMA is less than or equal to 200 μm, and the thickness dimension associated with each of the more than one MMA is less than or equal to 8 μm. Brief description of the attached diagram

[0008] Figures 1A-1B These are diagrams of exemplary embodiments described herein.

[0009] Figures 2A-2C These are diagrams of exemplary embodiments described herein.

[0010] Figures 3A-3J This is a diagram of the base layer described herein and an exemplary configuration of more than one unit cell formed on the base layer.

[0011] Figures 4A-4D These are diagrams of exemplary embodiments described herein.

[0012] Figures 5A-5G These are diagrams of exemplary embodiments described herein. Detailed description

[0013] The following detailed description of exemplary embodiments refers to the accompanying drawings. The same reference numerals in different drawings may identify the same or similar elements.

[0014] In some cases, absorptive electromagnetic shielding can comprise numerous magnetic absorbers suspended within a matrix of organic adhesives (e.g., silicone, neoprene, urethane, or nitrile). These magnetic absorbers are metallic flakes comprising ferromagnetic materials such as cobalt-iron-silicon alloys, iron-zirconium alloys, or cobalt-iron-boron alloys. However, metallic flakes are not conformable to specific shapes, which reduces their effectiveness as magnetic absorbers for certain ranges of electromagnetic waves. Furthermore, metallic flakes are typically large in size. For example, a typical metallic flake has a length and / or width dimension greater than or equal to 1 millimeter (mm) and a thickness dimension greater than or equal to 10 micrometers (μm), making it heavy. Therefore, in practical applications, this reduces the likelihood that metallic flakes can be included in coatings to provide electromagnetic shielding for components, as including metallic flakes in coatings can significantly increase the weight of the component.

[0015] Some embodiments described herein provide an MMA configured to absorb a specific range of electromagnetic radiation. The MMA includes a first metallic material or a first semiconductor material, a dielectric material disposed on the first metallic material or the first semiconductor material, and a second metallic material disposed on the dielectric material. The length dimension associated with the MMA is less than or equal to 200 micrometers (μm), the width dimension associated with the MMA is less than or equal to 200 μm, and the thickness dimension associated with the MMA is less than or equal to 8 μm. Therefore, some embodiments described herein provide a micro-sized MMA.

[0016] In some embodiments, the coating disposed on the surface of a component (e.g., a metal component) comprises a layer containing more than one micrometer (MMA) (e.g., where each MMA is micro-sized as described above). The more than one MMA can include MMAs of different sizes and profiles, enabling the coating to absorb electromagnetic radiation across one or more specific ranges. Furthermore, because the more than one MMA is micro-sized, the coating is easier to apply to the component (e.g., compared to a coating comprising a metal sheet), and the coating provides similar or improved electromagnetic radiation absorption performance while being lighter than a similar coating comprising a metal sheet. Additionally, the more than one MMA can be configured to have different orientations within the coating, and / or the coating can include one or more additional layers comprising additional more than one MMA, which further improves the electromagnetic radiation absorption performance of the coating (e.g., compared to a typical coating comprising a metal sheet).

[0017] In some embodiments, a formation process for forming more than one MMA is provided. The process includes depositing a release material (e.g., where the resin material is embossed with more than one unit cell) on a resin material, depositing a first metal material or a first semiconductor material on the release material, depositing a dielectric material on the first metal material or the first semiconductor material, and depositing a second metal material on the dielectric material. Thus, portions of the first metal material or the first semiconductor material, the dielectric material, and the second metal material deposited on more than one unit cell respectively form more than one MMA. The formation process also includes removing more than one MMA from the release material and singulating the more than one MMA. In this way, many micro-MMAs (e.g., thousands, millions, or billions of MMAs) can be formed during the same formation process, which is currently impossible using existing magnetic absorber formation techniques.

[0018] Figures 1A-1B This is a diagram of an exemplary embodiment 100 described herein. Figure 1A As shown, exemplary embodiment 100 may include metamaterial absorber (MMA) 102. Figure 1A A cross-sectional view of MMA 102 is shown. In some embodiments, MMA 102 may be configured to absorb at least one specific range of electromagnetic radiation. For example, MMA 102 may be configured to absorb electromagnetic radiation in one or more ranges between 300 micrometers (μm) (e.g., greater than or equal to 300 μm) and 10 centimeters (cm) (e.g., less than or equal to 10 centimeters). One or more ranges of electromagnetic radiation may include a first range of electromagnetic radiation between 300 μm (e.g., greater than or equal to 300 μm) and 1 mm (e.g., less than or equal to 1 mm), a second range of electromagnetic radiation between 11 mm (e.g., greater than or equal to 11 mm) and 1 cm (e.g., less than or equal to 1 cm), and / or a third range of electromagnetic radiation between 2 cm (e.g., greater than or equal to 2 cm) and 10 cm (e.g., less than or equal to 10 cm), and other examples.

[0019] like Figure 1AAs shown, MMA 102 may include a first metallic material or a first semiconductor material 104 (e.g., containing at least 1% metal), a dielectric material 106 disposed on the first metallic material or the first semiconductor material 104 (e.g., containing at least 1% dielectric), and a second metallic material 108 disposed on the dielectric material 106 (e.g., containing at least 1% metal). The first metallic material or the first semiconductor material 104 may be a resistive material and / or a conductive material, and may include, for example, aluminum material (e.g., including aluminum, aluminum film, or another aluminum-based material), copper material (e.g., including copper, copper film, or another copper-based material), and / or silicon material (e.g., including silicon, silicon film, or another silicon-based material). The thickness 110 of the first metallic material or the first semiconductor material 104 may be less than or equal to 1 μm, for example, between 5 nanometers (nm) and 1 μm (e.g., greater than or equal to 5 nm and less than or equal to 1 μm).

[0020] The dielectric material 106 may be an inorganic dielectric material (e.g., thermally evaporated inorganic dielectric materials, such as oxides or fluorides, and other examples) or an organic dielectric material, and may include, for example, magnesium fluoride materials and / or silicon dioxide materials. The thickness 112 of the dielectric material 106 may be less than or equal to 5 μm, for example, between 50 nm and 5 μm (e.g., greater than or equal to 50 nm and less than or equal to 5 μm). The second metallic material 108 may be a magnetic metallic material (e.g., a ferromagnetic material) and may include, for example, stainless steel (e.g., 300 series annealed iron-nickel-chromium stainless steel, 400 series iron-chromium stainless steel, or another type of stainless steel), low-carbon steel, elemental nickel, elemental iron, iron-nickel alloys (e.g., Hypernik, Permalloy, mu-metal, Alloy 50, or supermalloy), iron-aluminum alloys (e.g., Alfenol aluminum-iron high-permeability alloy), nickel-chromium-aluminum alloys (e.g., Kanthal chromium-aluminum-cobalt heat-resistant steel), iron-silicon alloys, iron-ytterbium alloys (e.g., Therfenol), iron-gallium alloys (e.g., Galfenol), ferrites (e.g., hard ferrites or soft ferrites), samarium-cobalt alloys, neodymium-boron-iron alloys, carbon-rich iron, aluminum-nickel-cobalt alloys, iron-nickel alloys, and / or another magnetic metallic material. The thickness 114 of the second metal 108 may be less than or equal to 2 μm, for example, between 10 nm and 2 μm (e.g., greater than or equal to 10 nm and less than or equal to 2 μm). In some embodiments, the thickness dimension 116 of the MMA 102 (e.g., the sum of thicknesses 110, 112, and 114) may be less than or equal to 8 μm, for example, between 65 nm and 8 μm (e.g., greater than or equal to 65 nm and less than or equal to 8 μm).

[0021] Figure 1B A top-down view of MMA102 is shown. In some embodiments, MMA102 may have a polygonal profile (e.g., a C-shaped profile, an H-shaped profile, a U-shaped profile, an I-shaped profile, a ring-shaped profile, a cross-shaped profile, a bar-shaped profile, or another polygonal profile) or a circular profile. For example, as... Figure 1B As shown, MMA 102 may have a square profile. Furthermore, in some embodiments, the length dimension 118 and the width dimension 120 of MMA 102 may each be less than or equal to 200 μm, for example, between 3 μm and 200 μm (e.g., greater than or equal to 3 μm and less than or equal to 200 μm). That is, the profile of MMA 102 (e.g., as seen from a top-down view of MMA 102) may have a critical dimension of less than or equal to 200 μm.

[0022] As indicated above, Figures 1A-1B Provided as one or more instances. Other instances may differ from those provided. Figures 1A-1B As described.

[0023] Figures 2A-2C This is a figure of the exemplary embodiment 200 described herein. Figure 2A A cross-sectional view of a first exemplary configuration of structure 202 is shown, structure 202 being configured to produce more than one MMA 102. Figure 2A As shown, structure 202 may include a substrate 204 (e.g., a polymer substrate, such as a polyester substrate), a resin 206 disposed on the substrate 204, a release material 208 disposed on the resin 206 (e.g., including a water-soluble material such as sodium chlorite, cryolite, or sodium borate), a first metal material or a first semiconductor material 104 disposed on the release material 208, a dielectric material 106 disposed on the first metal material or the first semiconductor material 104, and / or a second metal material 108 disposed on the dielectric material 106.

[0024] Figure 2B A cross-sectional view of a second exemplary configuration of structure 202 is shown. Figure 2B As shown, structure 202 may include a substrate 204 (e.g., a microstructured polyester mesh substrate), a release material 208 disposed on the substrate 204, a first metal material or a first semiconductor material 104 disposed on the release material 208, a dielectric material 106 disposed on the first metal material or the first semiconductor material 104, and / or a second metal material 108 disposed on the dielectric material 106. That is, as Figures 2A-2BAs shown, the difference between the first exemplary configuration and the second exemplary configuration of structure 202 is that in the first exemplary configuration, structure 202 includes resin 206, while in the second exemplary configuration, structure 202 does not include resin 206.

[0025] In some embodiments, the base layer of structure 202 (e.g., resin 206 in a first exemplary configuration or substrate 204 in a second exemplary configuration) may be embossed with more than one unit cell (e.g., as otherwise described herein). Therefore, the base layer (e.g., as...) Figure 2A Resin 206 shown in the figure, or as shown in the figure Figure 2B The substrate 204 shown may be formed (e.g., embossed) to include (e.g., separating one unit cell from another) one or more recesses 210. After forming one or more recesses 210 in the substrate layer, a forming process may be used to deposit release material 208, a first metal material or a first semiconductor material 104, a dielectric material 106, and / or a second metal material 108 (e.g., on the substrate layer).

[0026] For example, a deposition system (e.g., using a vacuum deposition process, thermal evaporation in a vacuum process, magnetron sputtering, and / or another process) can deposit release material 208 on a substrate layer (e.g., deposited on more than one unit cell of the substrate layer), can deposit a first metal material or a first semiconductor material 104 on release material 208, can deposit dielectric material 106 on the first metal material or the first semiconductor material 104, and can deposit a second metal material 108 on dielectric material 106. Therefore, release material 208, the first metal material or the first semiconductor material 104, dielectric material 106, and / or the second metal material 108 can have corresponding properties to the substrate layer (e.g., as shown in the image). Figure 2A Resin 206 shown in the figure, or as shown in the figure Figure 2B The substrate 204 shown in the figure has one or more grooves 210.

[0027] In some embodiments, portions of the first metal material or first semiconductor material 104, dielectric material 106, and / or second metal material 108 deposited on more than one unit cell form more than one MMA 102. For example, portions of the first metal material or first semiconductor material 104, dielectric material 106, and / or second metal material 108 deposited in a region associated with a unit cell and defined by one or more grooves 210 may include more than one MMA 102.

[0028] After forming structure 202, the forming process may include removing more than one MMA 102 from release material 208 and / or isolating more than one MMA 102 (e.g., with each other). For example, the deposition system may immerse structure 202 in water, which may cause release material 208 to dissolve and thereby separate more than one MMA 102 from the rest of structure 202 (e.g., including substrate 204 and / or resin 206). The deposition system may remove more than one MMA 102 from water and may dry more than one MMA 102 (e.g., at high temperatures, such as greater than or equal to 100 degrees Celsius). This may result in cracking and / or separation along one or more grooves between more than one MMA 102 (e.g., aligned with one or more grooves 210 of the substrate layer), and thus result in the isolation of more than one MMA 102. In some implementations, the forming process can create MMA 102 with different sizes, profiles and / or electromagnetic absorption properties (e.g., as described elsewhere herein).

[0029] Figure 2C A cross-section of the base layer of structure 202 is shown (e.g., as shown in the image). Figure 2A The resin 206 in the first exemplary configuration shown, or as... Figure 2B The second exemplary configuration shown in the figure includes a substrate 204 and different contour variations of one or more grooves 210. For example, Figure 2C One or more grooves 210 are shown, having a straight-edge profile (210-1), a tapered-edge profile (210-2), a triangular profile (210-3), or a rounded profile (210-4). In some embodiments, the width dimension of the groove 210 may be less than or equal to 4 μm, for example, between 50 nm and 4 μm (e.g., greater than or equal to 50 nm and less than or equal to 4 μm). The depth dimension of the groove 210 may be less than or equal to 400 μm, for example, between 50 nm and 400 μm (e.g., greater than or equal to 50 nm and less than or equal to 400 μm).

[0030] As indicated above, Figures 2A-2C Provided as one or more instances. Other instances may differ from those provided. Figures 2A-2C As described.

[0031] Figures 3A-3J It is the base layer of structure 202 described herein (e.g., as...). Figure 2A The resin 206 in the first exemplary configuration shown, or as... Figure 2BA diagram of an exemplary configuration 300 of the substrate 204 in the second exemplary configuration shown. In some embodiments, the substrate layer may be embossed with more than one unit cell 302, said more than one unit cell 302 being arranged in at least one tessellation pattern 304. Each of the more than one unit cell 302 may have, for example, a polygonal profile or a rounded profile. For example, unit cell 302-1 may have a C-shaped profile (e.g., a C-split-ring profile) arranged in tessellation pattern 304-1 (e.g., as shown in the figure). Figure 3A (as shown in the diagram); unit cell 302-2 may have a U-shaped profile (e.g., a U-shaped open-loop profile) arranged in a tessellation pattern 304-2 (e.g., as shown in the diagram). Figure 3B (as shown in the diagram); unit cell 302-3 may have an H-shaped profile arranged in a tessellation pattern 304-3 (e.g., as shown in the diagram). Figure 3C (as shown in the diagram); unit cell 302-4 may have a triangular profile arranged in a tessellation pattern 304-4 (e.g., having a hollow central portion) (e.g., as shown in the diagram). Figure 3D (as shown in the diagram); unit cell 302-5 may have a hexagonal profile arranged in a tessellation pattern 304-5 (e.g., having a hollow central portion, also referred to as a hexagonal ring-shaped profile) (e.g., as shown in the diagram); Figure 3E (as shown in the diagram); unit cell 302-6 may have a square profile arranged in a tessellation pattern 304-6 (e.g., having a hollow central portion, also referred to as a square annular profile) (e.g., as shown in the diagram). Figure 3F (as shown in the diagram); and / or unit cells 302-7 may have a cross-shaped profile arranged in a tessellation pattern 304-7 (e.g., as shown in the diagram). Figure 3G (As shown in the image).

[0032] Figures 3H-3J The base layer of structure 202 is shown (e.g., as shown in the figure). Figure 2A The resin 206 in the first exemplary configuration shown, or as... Figure 2B The substrate 204 in the second exemplary configuration shown can be embossed to include one or more grooves 210 that separate one unit cell 302 from another unit cell 302. In this way, a plurality of MMA 102 can be formed on more than one unit cell 302 of the substrate layer (e.g., as described herein). Figures 2A-2C (Described). Therefore, each of the more than one MMA 102 can have a profile similar to the corresponding unit cell 302 on which the MMA 102 is formed in the more than one unit cell 302.

[0033] As indicated above, Figures 3A-3J Provided as one or more instances. Other instances may differ from those provided. Figures 3A-3J As described.

[0034] Figures 4A-4D This is a diagram of an exemplary embodiment 400 described herein. Figures 4A-4D As shown, an exemplary embodiment 400 may include a component 402 (e.g., a metal component of a land vehicle, aircraft, ship, or other machine) and a coating 404 disposed on the surface of the component 402. The coating 404 may include more than one MMA 102, which may be disposed within an adhesive 406 (e.g., an organic adhesive) of the coating 404 (e.g., in a single layer of the coating 404). The volume concentration of the more than one MMA 102 within the adhesive 406 may be, for example, between 1% and 40% (e.g., greater than or equal to 1% and less than or equal to 40%).

[0035] Figure 4A A cross-sectional view of a specific configuration of exemplary embodiment 400 is shown. As shown in FIG4, each of more than one MMA 102 may have a reference plane 408 (e.g., which may be related to the one described herein). Figure 1A The thickness dimension 116 of the described MMA 102 is orthogonal to a horizontal plane. In some embodiments, such as Figure 4A As also shown, the corresponding reference plane 408 of a group of MMA 102 (e.g., one or more MMA 102) in more than one MMA 102 may be generally parallel to the surface of component 402 (e.g., parallel to the surface of component 402 within a certain tolerance, which may be less than or equal to 1 degree, 2 degrees or 3 degrees, and other examples).

[0036] Figure 4B An offset view of a specific configuration of exemplary implementation 400 is shown. Figure 4B As shown, more than one MMA 102 may each have the same profile (e.g., a C-shaped profile) and may each have a reference plane 408 (e.g., a horizontal plane, not shown) that is generally parallel to the surface of part 402. Figure 4B (As shown in the image). Figure 4BAs further shown, the first MMA 102-1 and the second MMA 102-2 in more than one MMA 102 can have different sizes. For example, a first difference between the length dimension 118-1 of the first MMA 102-1 and the length dimension 118-2 of the second MMA 102-2 can satisfy (e.g., greater than or equal to) a length difference threshold, which can be greater than or equal to 10 nm; a second difference between the width dimension 120-1 of the first MMA 102-1 and the width dimension 120-2 of the second MMA 102-2 can satisfy (e.g., greater than or equal to) a width difference threshold, which can be greater than or equal to 10 nm; and / or a third difference between the thickness dimension 116-1 of the first MMA 102-1 and the thickness dimension 116-2 of the second MMA 102-2 can satisfy (e.g., greater than or equal to) a thickness difference threshold, which can be greater than or equal to 10 nm. Figure 4B As further shown, the first MMA 102-1 and the second MMA 102-2 may have different orientations within the adhesive 406 (e.g., length dimension 118-1 and length dimension 118-2 may not be parallel to each other, and / or width dimension 120-1 and width dimension 120-2 may not be parallel to each other).

[0037] Figure 4C A bias view of another specific configuration of exemplary implementation 400 is shown. (e.g.) Figure 4C As shown, more than one MMA 102 may each have the same profile (e.g., a C-shaped profile) and may each have a reference plane 408 (e.g., a horizontal plane, not shown) that is generally parallel to the surface of part 402. Figure 4C (As shown in the image). Figure 4C As further shown, the first MMA 102-1 and the second MMA 102-2 of more than one MMA 102 can have different sizes and can have the same orientation within the adhesive 406. For example, the length dimension 118-1 of the first MMA 102-1 and the length dimension 118-2 of the second MMA 102-2 can be substantially parallel to each other. The first MMA 102-1 and the second MMA 102-2 can be aligned by applying one or more magnetic field lines 410 (e.g., substantially parallel to the surface of the component 402) to more than one MMA 102 within the adhesive 406 (e.g., before the adhesive 406 cures).

[0038] Figure 4D A bias view of another specific configuration of exemplary implementation 400 is shown. (e.g.) Figure 4DAs shown, more than one MMA 102 may each have a specific profile in more than one profile, and may each have a reference plane 408 (e.g., a horizontal plane, not shown) that is generally parallel to the surface of part 402. Figure 4D (As shown in the image). Figure 4D As further shown, more than one MMA 102 may comprise a group or more groups of MMA 412 (e.g., where each group of MMA 412 comprises a group or more groups of MMA 102 having the same or different profiles and / or sizes). Figure 4D As further shown, each group of MMA 412 can be aligned in a chain (e.g., one or more MMA 102 in a group of MMA 412 are connected in a line and can be aligned by applying magnetic field lines 410 to more than one MMA 102 within the adhesive 406). The respective chains of one or more groups of MMA 412 can be substantially parallel to each other.

[0039] As indicated above, Figures 4A-4D Provided as one or more instances. Other instances may differ from those provided. Figures 4A-4D As described.

[0040] Figures 5A-5G This is a diagram of an exemplary embodiment 500 described herein. Figures 5A-5G As shown, an exemplary embodiment 500 may include a component 502 (e.g., a metal component) and a coating 504 disposed on the surface of the component 502. The coating 504 may include: a first MMA 102-A, which may be disposed within a first adhesive 506-A (e.g., an organic adhesive) of the coating 504 in a first layer 508-A of the coating 504; a second MMA 102-B, which may be disposed within a second adhesive 506-B of the coating 504 in a second layer 508-B of the coating 504, and so on.

[0041] Figure 5A A cross-sectional view of a specific configuration of exemplary embodiment 500 is shown. Figure 5A As shown, each of the first more than one MMA 102-A may have a reference plane 510-A (e.g., a horizontal plane), and each of the second more than one MMA 102-B may have a reference plane 510-B (e.g., a horizontal plane). In some embodiments, such as Figure 5AAs also shown, the corresponding reference plane 510-A of the first group of MMA 102-A (e.g., one or more MMA 102-A) may be substantially parallel to the corresponding reference plane 510-B of the second group of MMA 102-B (e.g., one or more MMA 102-B) (e.g., parallel to each other within a certain tolerance, which may be less than or equal to 1 degree, 2 degrees or 3 degrees, and other instances).

[0042] Figure 5B A bias view of a specific configuration of an exemplary implementation 500 is shown. Figure 5B As shown, more than one first MMA 102-A may each have the same first profile (e.g., an H-shaped profile), and more than one second MMA 102-B may each have the same second profile (e.g., a C-shaped profile). Figure 5B As further shown, more than one first MMA 102-A may be oriented in a first direction 512-A (e.g., the corresponding length dimension of the first more than one MMA 102-A may be substantially parallel to the first direction 512-A), and more than one second MMA 102-B may be oriented in a second direction 512-B (e.g., the corresponding length dimension of the second more than one MMA 102-B may be substantially parallel to the second direction 512-B). The first direction 512-A and the second direction 512-B may be the same or different. The first more than one MMA 102-A can be aligned by applying one or more magnetic field lines to the first more than one MMA 102-A within the adhesive 506-A (e.g., before the adhesive 506-A is cured), and / or the second more than one MMA 102-B can be aligned by applying one or more magnetic field lines to the first more than one MMA 102-B within the adhesive 506-B (e.g., before the adhesive 506-B is cured).

[0043] Figures 5C-5D A cross-sectional view of a specific configuration of exemplary embodiment 500 is shown. Figures 5C-5D As shown, the corresponding reference plane 510-A (e.g., a vertical plane) of the first group of MMA 102-A (e.g., one or more MMA 102-A) in the first group of more than one MMA 102-A can be substantially perpendicular to the surface of component 502 (e.g., perpendicular to the surface of component 502 within a certain tolerance, which may be less than or equal to 1 degree, 2 degrees, or 3 degrees, and other examples). Figure 5DAs also shown, the first set of MMA 102-A can be aligned by applying one or more magnetic field lines 514 (e.g., generally perpendicular to the surface of component 502) to the first more than one MMA 102-A within the adhesive 506-A (e.g., before the adhesive 506-A cures).

[0044] Figure 5E A bias view of a specific configuration of an exemplary implementation 500 is shown. Figure 5E As shown, the first more than one MMA 102-A may each have a specific contour from more than one contour, and the second more than one MMA 102-B may each have a specific contour from more than one contour. Figure 5E As further shown, more than one first MMA 102-A may be oriented in a first direction 516-A (e.g., the corresponding length dimension of the more than one first MMA 102-A may be substantially parallel to the first direction 516-A), and more than one second MMA 102-B may be oriented in a second direction 516-B (e.g., the corresponding length dimension of the more than one second MMA 102-B may be substantially parallel to the second direction 516-B). Figure 5E As also shown, the corresponding reference plane 510-A (e.g., a horizontal plane) of a first group of more than one MMA 102-A (e.g., one or more MMA 102-A) can be substantially perpendicular to the corresponding reference plane 510-B (e.g., a vertical plane) of a second group of more than one MMA 102-B (e.g., one or more MMA 102-B) (e.g., perpendicular to each other within a certain tolerance, which may be less than or equal to 1 degree, 2 degrees or 3 degrees, and other examples).

[0045] Figure 5F A cross-sectional view of a specific configuration of exemplary embodiment 500 is shown. Figure 5F As shown, coating 504 may include: a first MMA 102-A, which may be disposed within a first adhesive 506-A of coating 504 in a first layer 508-A of coating 504; a second MMA 102-B, which may be disposed within a second adhesive 506-B of coating 504 in a second layer 508-B of coating 504; and a third MMA 102-C, which may be disposed within a third adhesive 506-C of coating 504 in a third layer 508-C of coating 504. Figure 5FAs also shown, a first reference plane 510-A (e.g., a horizontal plane) of more than one MMA 102-A may be substantially parallel to the surface of component 502, a second reference plane 510-B of more than one MMA 102-B may be aligned with the surface of component 502 at a first alignment angle (e.g., not parallel to the surface of component 502), and a third reference plane 510-C of more than one MMA 102-C may be aligned with the surface of component 502 at a second alignment angle (e.g., not parallel to the surface of component 502).

[0046] Figure 5G A bias view of a specific configuration of an exemplary implementation 500 is shown. Figure 5G As shown, a first group of more than one MMA 102-A may include one or more first groups of MMA 518-A (e.g., each first group of MMA 518-A includes one or more MMA 102-A having the same or different profiles and / or sizes), and a second group of more than one MMA 102-B may include one or more second groups of MMA 518-B (e.g., each second group of MMA 518-B includes one or more MMA 102-B having the same or different profiles and / or sizes). Figure 5G As further shown, each first group of MMA 518-A can be aligned into chains (e.g., one or more MMA 102-A in the first group of MMA 518-A are connected into a line), and the corresponding chains of one or more first group of MMA 518-A can be substantially parallel to each other. Additionally, each second group of MMA 518-B can be aligned into chains (e.g., one or more MMA 102-B in the second group of MMA 518-B are connected into a line), and the corresponding chains of one or more second group of MMA 518-B can be substantially parallel to each other. In some embodiments, the difference between a first alignment angle of the first group of MMA 518-A and a second alignment angle of the second group of MMA 518-B can satisfy (e.g., greater than or equal to) an alignment angle difference threshold, which can be greater than or equal to 1 degree, 2 degrees, or 3 degrees, and other instances.

[0047] As indicated above, Figures 5A-5G Provided as one or more instances. Other instances may differ from those provided. Figures 5A-5G As described.

[0048] The foregoing disclosure provides illustrations and descriptions, but is not intended to be exhaustive or to limit the embodiments to the precise forms disclosed. Modifications and changes can be made based on the foregoing disclosure or can be obtained from practice of the embodiments.

[0049] As used in this article, meeting the threshold is, depending on the context, referring to values ​​greater than the threshold, greater than or equal to the threshold, less than the threshold, less than or equal to the threshold, equal to the threshold, not equal to the threshold, or similar values.

[0050] Even though specific combinations of features are stated in the claims and / or disclosed in the description, these combinations are not intended to limit the disclosure of multiple embodiments. In fact, many of these features can be combined in ways not specifically stated in the claims and / or disclosed in the description. Although each dependent claim listed below may be directly subordinated to only one claim, the disclosure of multiple embodiments includes each dependent claim combined with each other claim in the claim group. As used herein, the phrase “at least one of” referring to a list of items refers to any combination of those items, including single members. As an example, “at least one of a, b, or c” is intended to cover a, b, c, ab, ac, bc, and abc, as well as any combination having multiple identical items.

[0051] No element, action, or instruction used herein should be construed as critical or necessary unless explicitly stated otherwise. Furthermore, as used herein, the articles “a” and “an” are intended to include one or more items and may be used interchangeably with “one or more.” Additionally, as used herein, the article “the” is intended to include one or more items mentioned in connection with the article “the” and may be used interchangeably with “the one or more.” Furthermore, as used herein, the term “group” is intended to include one or more items (e.g., related items, unrelated items, or a combination of related and unrelated items) and may be used interchangeably with “one or more.” Where the intent is for only one item, the phrase “only one” or similar language is used. Furthermore, as used herein, the terms “has,” “have,” “having,” or similar terms are intended to be open-ended terms. Additionally, the phrase “based on” is intended to mean “at least partially based on” unless explicitly stated otherwise. Furthermore, as used herein, the term “or” is intended to be inclusive when used in a series and may be used interchangeably with “and / or” unless otherwise explicitly stated (e.g., if used in combination with “either” or “only one of them”).

Claims

1. A coating disposed on the surface of a component, the coating comprising: The first layer includes more than one metamaterial absorber (MMA) disposed within a first adhesive. Wherein, each of the first more than one MMA includes: First metallic material or first semiconductor material; A dielectric material disposed on the first metallic material or the first semiconductor material; and A second metallic material is disposed on the dielectric material, wherein: The length dimension of the MMA is less than or equal to 200 micrometers (μm). The width dimension of the MMA is less than or equal to 200 μm, and The thickness of the MMA is less than or equal to 8 μm.

2. The coating of claim 1, wherein the first more than one MMA comprises a first MMA and a second MMA, wherein at least one of the following: The contour of the first MMA is different from the contour of the second MMA; The first difference between the length dimensions of the first MMA and the length dimensions of the second MMA satisfies the length difference threshold. The second difference between the width dimensions of the first MMA and the width dimensions of the second MMA satisfies the width difference threshold; or The third difference between the thickness dimensions of the first MMA and the thickness dimensions of the second MMA satisfies the thickness difference threshold.

3. The coating of claim 1, wherein the respective reference planes of a group of MMAs in the first more than one MMA are substantially parallel to the surface of the component.

4. The coating of claim 1, wherein the respective reference planes of a group of MMAs in the first more than one MMA are substantially perpendicular to the surface of the component.

5. The coating of claim 1, wherein the first more than one MMA comprises one or more groups of MMAs, wherein: Each of the one or more sets of MMAs is aligned into a chain; and The corresponding chains of the one or more MMAs are substantially parallel to each other.

6. The coating of claim 1, further comprising a second layer, the second layer comprising a second MMA disposed within a second adhesive, wherein: The corresponding reference plane of the first group of MMAs in the first more than one MMA is substantially parallel to the corresponding reference plane of the second group of MMAs in the second more than one MMA.

7. The coating of claim 1, further comprising a second layer, the second layer comprising more than one MMA disposed within the second adhesive. in, The corresponding reference plane of the first group of MMAs in the first more than one MMA is substantially perpendicular to the corresponding horizontal plane of the second group of MMAs in the second more than one MMA.

8. The coating of claim 1, further comprising a second layer, the second layer comprising a second MMA disposed within a second adhesive, wherein: The first more than one MMA includes a first set of MMAs aligned to a first chain; The second more than one MMA includes a second set of MMAs aligned to a second chain; and The difference between the first alignment angle of the first group of MMAs and the second alignment angle of the second group of MMAs satisfies the alignment angle difference threshold.

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