Array substrate manufacturing method and display panel manufacturing method

Abstract

The application discloses a preparation method of an array substrate and a preparation method of a display panel. The preparation method of the array substrate comprises the following steps: providing a substrate, the substrate comprising a first region and a second region which are arranged adjacently and in the same layer; sequentially laminating a first conductive part, an insulating layer and a metal oxide active layer on the substrate, and forming an electrode part on the substrate, the first conductive part being located in the first region, the electrode part being located in the second region, and the insulating layer and the metal oxide active layer being located in the first region and the second region; wherein the electrode part is arranged in insulation with the first conductive part and the metal oxide active layer; electrically connecting the electrode part with the metal oxide active layer, electrochemically oxidizing the metal oxide active layer to form an active part; forming a second conductive part on the active part; and removing the electrode part. By using the preparation method, the oxygen vacancies in the active part can be effectively reduced, so that the stability of the device is improved.

Description

Technical Field

[0001] This application relates to the field of display technology, specifically to a method for fabricating an array substrate and a method for fabricating a display panel. Background Technology

[0002] Thin film transistors (TFTs) are generally divided into two categories: metal oxide TFTs and silicon-based TFTs. Metal oxide TFTs are widely used in the field of display technology due to their high mobility, simple manufacturing process, low manufacturing cost, and excellent large-area uniformity.

[0003] The active layer in metal oxide TFTs usually contains oxygen vacancies. A large number of oxygen vacancies will result in a high carrier concentration, making it difficult to turn off the TFT device and causing poor stability.

[0004] Currently, to address the aforementioned issues, plasma treatment of the active layer surface is commonly used to reduce oxygen vacancies. However, this method only improves the oxygen vacancy level at the active layer surface. Furthermore, plasma possesses significant energy, and bombarding the metal oxide surface with it can actually increase the number of oxygen vacancies. Therefore, the effect of plasma treatment of the active layer surface on improving oxygen vacancy levels is very limited. Summary of the Invention

[0005] This application provides a method for fabricating an array substrate and a method for fabricating a display panel to improve the problem of oxygen vacancy defects inside the active part.

[0006] This application provides a method for fabricating an array substrate, comprising:

[0007] A substrate is provided, the substrate comprising a first region and a second region that are adjacent and disposed in the same layer;

[0008] A first conductive portion, an insulating layer, and a metal oxide active layer are sequentially stacked on the substrate, and an electrode portion is formed on the substrate. The first conductive portion is located in the first region, the electrode portion is located in the second region, and both the insulating layer and the metal oxide active layer are located in the first region and the second region, respectively. The electrode portion is insulated from both the first conductive portion and the metal oxide active layer.

[0009] The electrode portion is electrically connected to the active metal oxide layer, and the active metal oxide layer is subjected to electrochemical oxidation treatment to form the active portion;

[0010] A second conductive portion is formed on the active portion; and

[0011] Remove the electrode portion.

[0012] Optionally, in some embodiments of this application, the electrode portion is electrically connected to the metal oxide active layer, and the active portion is formed by electrochemical oxidation of the metal oxide active layer, including:

[0013] Using the electrode portion as the cathode and the metal oxide active layer as the anode, the metal oxide active layer is subjected to electrochemical oxidation treatment to form the active portion.

[0014] Optionally, in some embodiments of this application, the first conductive portion is a gate, and the second conductive portion is a source / drain.

[0015] The substrate comprises a first conductive portion, an insulating layer, and a metal oxide active layer sequentially stacked on the substrate, and an electrode portion formed on the substrate, including:

[0016] A conductive material layer is disposed on the substrate, and the conductive material layer is patterned to form a first conductive part and an electrode part that are disposed in the same layer and insulated from each other;

[0017] An insulating layer is formed on the first conductive portion and the electrode portion; and

[0018] An active metal oxide layer is formed on the insulating layer.

[0019] Optionally, in some embodiments of this application, the first conductive portion is a gate, and the second conductive portion is a source / drain.

[0020] The substrate comprises a first conductive portion, an insulating layer, and a metal oxide active layer sequentially stacked on the substrate, and an electrode portion formed on the substrate, including:

[0021] A first conductive portion is formed on the substrate;

[0022] An insulating layer is formed on the first conductive portion and the second region; and

[0023] An active metal oxide layer and an electrode portion are formed on the insulating layer in the same layer and insulated from each other, wherein the electrode portion is located at least on one side of the active metal oxide layer.

[0024] Optionally, in some embodiments of this application, the first conductive part is a light-shielding part, and the second conductive part is a gate.

[0025] The substrate comprises a first conductive portion, an insulating layer, and a metal oxide active layer sequentially stacked on the substrate, and an electrode portion formed on the substrate, including:

[0026] A conductive material layer is disposed on the substrate, and the conductive material layer is patterned to form a first conductive part and an electrode part that are disposed in the same layer and insulated from each other;

[0027] An insulating layer is formed on the first conductive portion and the electrode portion; and

[0028] An active metal oxide layer is formed on the insulating layer.

[0029] Optionally, in some embodiments of this application, the first conductive portion is a source / drain electrode, and the second conductive portion is a gate electrode;

[0030] The substrate comprises a first conductive portion, an insulating layer, and a metal oxide active layer sequentially stacked on the substrate, and an electrode portion formed on the substrate, including:

[0031] A conductive material layer is disposed on the substrate, and the conductive material layer is patterned to form a first conductive part and an electrode part that are in the same layer and insulated from each other;

[0032] An insulating layer is formed on the first conductive portion and the electrode portion; and

[0033] A metal oxide active layer is formed on the insulating layer, and the metal oxide active layer extends into the via and connects to the first conductive part.

[0034] Optionally, in some embodiments of this application, the active portion is formed by electrochemically oxidizing the metal oxide active layer, using the electrode portion as the cathode and the metal oxide active layer as the anode, including:

[0035] The metal oxide active layer and the electrode portion are placed in an electrolyte solution, and an electrochemical oxidation process is performed by applying an electric current. Optionally, in some embodiments of this application, the voltage applied for the electrochemical oxidation process is 10-100 volts.

[0036] Optionally, in some embodiments of this application, the voltage is applied for 10-60 minutes during the electrochemical oxidation treatment.

[0037] This application also provides a method for manufacturing a display panel, including the method for manufacturing the array substrate.

[0038] This application discloses a method for fabricating an array substrate and a method for fabricating a display panel. The method for fabricating the array substrate includes: providing a substrate, the substrate including a first region and a second region that are adjacent and co-layered; sequentially stacking a first conductive portion, an insulating layer, and a metal oxide active layer on the substrate, and forming an electrode portion on the substrate, wherein the first conductive portion is located in the first region, the electrode portion is located in the second region, and the insulating layer and the metal oxide active layer are both located in the first region and the second region; wherein the electrode portions are insulated from the first conductive portion and the metal oxide active layer; electrically connecting the electrode portion to the metal oxide active layer; performing an electrochemical oxidation treatment on the metal oxide active layer to form an active portion; forming a second conductive portion on the active portion; and removing the electrode portion. In this application, the active portion is fabricated using an electrochemical oxidation treatment method, so that during the electrochemical oxidation process, the cations of oxygen vacancies in the metal oxide active layer combine with the electrolyzed oxygen, thereby reducing the oxygen vacancies in the metal oxide active layer, making the active portion less susceptible to the effects of water, oxygen, and negative bias voltage, and improving the stability of the device. Attached Figure Description

[0039] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0040] Figure 1 This is a schematic diagram of the process steps for fabricating an array substrate according to an embodiment of this application.

[0041] Figure 2 This is a schematic planar diagram of the process steps of the array substrate fabrication method provided in the embodiments of this application.

[0042] Figure 3 This is a cross-sectional schematic diagram of the process steps of the array substrate fabrication method provided in the embodiments of this application.

[0043] Figure 4 This is a schematic diagram of the first structure of the array substrate provided in the embodiments of this application.

[0044] Figure 5 This is a schematic diagram of a second structure of the array substrate provided in the embodiments of this application.

[0045] Figure label:

[0046] Array substrate 10; substrate 100; first region 11; second region 12; first conductive part 200; insulating layer 300; active part 400; electrode part 500; second conductive part 600; insulating film 700; third conductive part 800; interlayer dielectric layer 900. Detailed Implementation

[0047] The technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. Furthermore, it should be understood that the specific embodiments described herein are only for illustration and explanation of this application and are not intended to limit this application. In this application, unless otherwise stated, directional terms such as "upper" and "lower" generally refer to the upper and lower positions of the device in actual use or operation, specifically the drawing directions in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. In this application, "reaction" can be a chemical reaction or a physical reaction.

[0048] This application discloses a method for fabricating an array substrate and a method for fabricating a display panel. The method for fabricating the array substrate includes: providing a substrate, the substrate including a first region and a second region that are adjacent and disposed on the same layer; sequentially stacking a first conductive portion, an insulating layer, and a metal oxide active layer on the substrate, and forming an electrode portion on the substrate, wherein the first conductive portion is located in the first region, the electrode portion is located in the second region, and the insulating layer and the metal oxide active layer are both located in the first region and the second region; wherein the electrode portion is insulated from the first conductive portion and the metal oxide active layer; electrically connecting the electrode portion to the metal oxide active layer, and performing an electrochemical oxidation treatment on the metal oxide active layer to form an active portion; forming a second conductive portion on the active portion; and removing the electrode portion.

[0049] In this application, the active part is prepared by electrochemical oxidation treatment. During the electrochemical oxidation process, the cations of oxygen vacancies in the active layer of metal oxide combine with the electrolyzed oxygen, thereby reducing the oxygen vacancies in the active layer of metal oxide. This makes the active part less susceptible to the effects of water, oxygen and negative bias voltage, thus improving the stability of the device.

[0050] This application provides a method for fabricating an array substrate. It includes:

[0051] B11. A substrate is provided, the substrate including a first region and a second region that are adjacent and disposed in the same layer.

[0052] B12. A first conductive portion, an insulating layer, and a metal oxide active layer are sequentially stacked on a substrate, and an electrode portion is formed on the substrate. The first conductive portion is located in a first region, the electrode portion is located in a second region, and the insulating layer and the metal oxide active layer are both located in the first region and the second region. The electrode portion is insulated from the first conductive portion and the metal oxide active layer.

[0053] B13. Electrically connect the electrode section to the active metal oxide layer, and perform electrochemical oxidation treatment on the active metal oxide layer to form the active section.

[0054] B14. A second conductive part is formed on the active part.

[0055] B15. Remove the electrode section.

[0056] The active part is prepared by electrochemical oxidation treatment. During the electrochemical oxidation process, the cations of oxygen vacancies in the active layer of metal oxide combine with the electrolyzed oxygen, thereby reducing the oxygen vacancies in the active layer of metal oxide. This makes the active part less susceptible to the effects of water, oxygen and negative bias voltage, thus improving the stability of the device.

[0057] The specific description is as follows:

[0058] Please see Figure 1 and Figure 2 Example 1:

[0059] B11. A substrate is provided, the substrate including a first region and a second region that are adjacent and disposed in the same layer.

[0060] Specifically, there are multiple first regions 11 and second regions 12.

[0061] B12. A first conductive portion, an insulating layer, and a metal oxide active layer are sequentially stacked on a substrate, and an electrode portion is formed on the substrate. The first conductive portion is located in a first region, the electrode portion is located in a second region, and the insulating layer and the metal oxide active layer are both located in the first region and the second region. The electrode portion is insulated from the first conductive portion and the metal oxide active layer.

[0062] Please see Figure 3 It should be noted that, Figure 3 Figure (c) in the middle corresponds to Figure 2 (a) in the middle, Figure 3 (d) in the middle corresponds to Figure 2 (b) in the middle Figure 2 Only a portion of the film is shown, but that does not mean it is absent.

[0063] Specifically, a conductive material layer is formed on the substrate 100, and the conductive material layer is patterned to form a first conductive portion 200 and an electrode portion 500 that are co-layered and insulated from each other. The first conductive portion 200 is located in a first region 11. The first conductive portion 200 is a gate electrode. The electrode portion 500 is located in a second region 12. The conductive material layer includes at least one of Al, Ti, and Mo. Optionally, other materials may also be used, which are not limited here.

[0064] Then, an insulating film 700 is formed on the first conductive portion 200 and the electrode portion 500. The insulating film 700 is located in the first region 11 and the second region 12, that is, the insulating film 700 overlaps with the electrode portion 500.

[0065] A metal oxide active layer is formed on the insulating film 700. The metal oxide active layer is located in the first region 11 and the second region 12, that is, the metal oxide active layer overlaps with the electrode portion 500. The metal oxide includes at least one of indium gallium zinc oxide (IGZO) and indium zinc oxide (IZO). Optionally, other materials may also be used, which are not limited here.

[0066] In this application, the first conductive portion 200 and the electrode portion 500 are formed simultaneously, eliminating the need for separate formation of the first conductive portion 200 and the second electrode portion 500, and thus eliminating the need for an additional photomask. This simplifies the fabrication process of the array substrate 10 and reduces costs. The electrode portion 500 is formed using a structure not part of the transistor during the fabrication of the array substrate 10, allowing full utilization of the structures in the array substrate 10 without affecting the film layers in the transistor, thereby ensuring device performance.

[0067] B13. Electrically connect the electrode section to the active metal oxide layer, and perform electrochemical oxidation treatment on the active metal oxide layer to form the active section.

[0068] Using electrode 500 as the cathode and the metal oxide active layer as the anode, the metal oxide active layer is electrochemically oxidized to form the active part 400. Specifically, the metal oxide active layer and electrode 500 are placed in an electrolyte solution, the metal oxide active layer is connected to the positive terminal of the power supply, and the electrode 500 is connected to the negative terminal of the power supply. Then, an electrochemical oxidation process is performed, and the metal oxide active layer forms the active part 400. At this time, the active part 400 is only located in the first region 11.

[0069] In this application, during the electrochemical oxidation process, the cations of oxygen vacancies in the active layer of the metal oxide combine with the electrolyzed oxygen, thereby reducing the number of oxygen vacancies in the active layer of the metal oxide. This makes the active part 400 less susceptible to the effects of water, oxygen, and negative bias illumination, thus improving the stability of the device.

[0070] In one embodiment, the electrolyte solution is a low-concentration oxalic acid solution, a near-neutral sodium chloride solution, or an ethylene glycol solution, etc. Using a low-concentration oxalic acid solution minimizes damage to the active metal oxide layer, thus ensuring device performance.

[0071] In one embodiment, the voltage applied during the electrochemical oxidation treatment is 10-100 volts. Specifically, the voltage applied during the electrochemical oxidation treatment is 10 volts, 50 volts, 80 volts, 90 volts, or 100 volts, etc.

[0072] In this application, the voltage applied for the electrochemical oxidation process is set to 10-100 volts, which allows control over the proportion of oxygen vacancies inside the active part 400, thereby ensuring the performance of the device.

[0073] In one embodiment, the electrochemical oxidation treatment is performed with voltage for 10-60 minutes. Specifically, the electrochemical oxidation treatment is performed with voltage for 10 minutes, 20 minutes, 40 minutes, or 60 minutes, etc.

[0074] In this application, the time for applying voltage during electrochemical oxidation treatment is set to 10-60 minutes, which allows control over the proportion of oxygen vacancies inside the active part 400, thereby ensuring the performance of the device.

[0075] In another embodiment, the electrolyte solution can also be sprayed onto the metal oxide active layer and the electrode.

[0076] B14. A second conductive part 600 is formed on the active part.

[0077] Specifically, a conductive material is formed on the active portion 400, and a second conductive portion 600 is formed by patterning. At this time, the second conductive portion 600 is only located in the first region 11. The second conductive portion 600 serves as both the source and drain. The first conductive portion 200, the insulating layer 300, the active portion 400, and the second conductive portion 600 constitute a transistor. The transistor is a bottom-gate transistor. The transistor, the electrode portion 500, and the substrate 100 constitute a motherboard.

[0078] B15, Remove electrode section 500.

[0079] The motherboard is placed on a cutting device and cut along the boundary line between the first region 11 and the second region 12 to obtain the array substrate 10. The structure of the array substrate 10 is set on the first region 11.

[0080] Example 2:

[0081] It should be noted that the difference between Example 2 and Example 1 is as follows:

[0082] The electrode portion 500 is not formed synchronously with the first conductive portion 200. The electrode portion 500 is disposed on the insulating layer 300.

[0083] Specifically, in step 12:

[0084] A first conductive portion 200 is formed on the substrate 100. Then, an insulating layer 300 is formed on the first conductive portion 200 and the second region 12. Then, a metal oxide active layer and an electrode portion 500 are formed on the insulating layer 300 and are disposed in the same layer and insulated from each other. The electrode portion 500 is located at least on one side of the metal oxide active layer, that is, the metal oxide active layer covers the electrode portion 500. The rest is the same as in Embodiment 1, and will not be described again here.

[0085] In another embodiment, the electrode portion 500 is disposed around the metal oxide active layer.

[0086] Example 3:

[0087] Please see Figure 4 It should be noted that the difference between Embodiment 3 and Embodiment 1 is that the first conductive part 200 is a light-shielding part, the second conductive part 600 is a gate, and the transistor is a top-gate transistor.

[0088] Specifically, in step 12:

[0089] A conductive material layer is formed on a substrate 100, and the conductive material layer is patterned to form a first conductive portion 200 and an electrode portion 500 that are co-layered and insulated. Then, an insulating layer 300 is formed on the first conductive portion 200 and the electrode portion 500. Then, a metal oxide active layer is formed on the insulating layer 300. Then, an insulating film 700 is formed on the metal oxide active layer. Then, steps 13 and 14 are performed. Then, an interlayer dielectric layer 900 is formed on the second conductive portion 600, and the interlayer dielectric layer 900 has through-holes. Then, a third conductive portion 800 is formed on the conductive material in the interlayer dielectric layer 900. The third conductive portion 800 is a source / drain electrode. Then, step 15 is performed. Other aspects are the same as in Embodiment 1, and will not be repeated here.

[0090] Example 4:

[0091] Please see Figure 5 It should be noted that the difference between Embodiment 4 and Embodiment 3 is that the first conductive part 200 is the source and drain, and the second conductive part 600 is the gate.

[0092] Specifically, in step 12:

[0093] A conductive material layer is formed on a substrate 100, and the conductive material layer is patterned to form a first conductive portion 200 and an electrode portion 500 that are co-layered and insulated. Then, an insulating layer 300 is formed on the first conductive portion 200 and the electrode portion 500. Next, a metal oxide active layer is formed on the insulating layer 300, extending into a via and connecting to the first conductive portion 200. Then, an insulating layer 300 is formed on the metal oxide active layer. Then, steps 13-15 are performed. Other aspects are the same as in Embodiment 1 and will not be repeated here.

[0094] This application also provides a method for manufacturing a display panel, including the method for manufacturing the array substrate 10 provided in this application.

[0095] This application discloses a method for fabricating an array substrate 10 and a method for fabricating a display panel. The active part 400 is fabricated by an electrochemical oxidation process. During the electrochemical oxidation process, the cations of oxygen vacancies in the active layer of the metal oxide combine with the electrolyzed oxygen, thereby reducing the oxygen vacancies in the active layer of the metal oxide. This makes the active part 400 less susceptible to the effects of water, oxygen, and negative bias voltage, thus improving the stability of the device.

[0096] The above provides a detailed description of the preparation method of an array substrate and a display panel provided in the embodiments of this application. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A method for fabricating an array substrate, characterized in that, include: A substrate is provided, the substrate comprising a first region and a second region that are adjacent and disposed in the same layer; A first conductive portion, an insulating layer, and a metal oxide active layer are sequentially stacked on the substrate, and an electrode portion is formed on the substrate. The first conductive portion is located in the first region, the electrode portion is located in the second region, and both the insulating layer and the metal oxide active layer are located in the first region and the second region, respectively. The electrode portion is insulated from both the first conductive portion and the metal oxide active layer. The electrode portion is electrically connected to the active metal oxide layer, and the active metal oxide layer is subjected to electrochemical oxidation treatment to form the active portion; A second conductive portion is formed on the active portion; and Remove the electrode portion; Wherein, the first conductive portion is a gate, and the second conductive portion is a source / drain electrode; the first conductive portion, an insulating layer, and a metal oxide active layer are sequentially stacked on the substrate, and an electrode portion is formed on the substrate, including: A conductive material layer is disposed on the substrate, and the conductive material layer is patterned to form a first conductive part and an electrode part that are disposed in the same layer and insulated from each other. The first conductive part and the electrode part are formed simultaneously.

2. The method for fabricating an array substrate according to claim 1, characterized in that, The process of electrically connecting the electrode portion to the active metal oxide layer and electrochemically oxidizing the active metal oxide layer to form the active portion includes: Using the electrode portion as the cathode and the metal oxide active layer as the anode, the metal oxide active layer is subjected to electrochemical oxidation treatment to form the active portion.

3. The method for fabricating an array substrate according to claim 1 or 2, characterized in that... The substrate, in which a first conductive portion, an insulating layer, and a metal oxide active layer are sequentially stacked on the substrate, and an electrode portion is formed on the substrate, further includes: An insulating layer is formed on the first conductive portion and the electrode portion; and An active metal oxide layer is formed on the insulating layer.

4. The method for fabricating an array substrate according to claim 1 or 2, characterized in that, The substrate comprises a first conductive portion, an insulating layer, and a metal oxide active layer sequentially stacked on the substrate, and an electrode portion formed on the substrate, including: A first conductive portion is formed on the substrate; An insulating layer is formed on the first conductive portion and the second region; and An active metal oxide layer and an electrode portion are formed on the insulating layer in the same layer and insulated from each other, wherein the electrode portion is located at least on one side of the active metal oxide layer.

5. The method for fabricating an array substrate according to claim 2, characterized in that, Using the electrode portion as the cathode and the metal oxide active layer as the anode, the active portion is formed by electrochemically oxidizing the metal oxide active layer, comprising: The active metal oxide layer and the electrode portion are placed in an electrolyte solution and electrochemical oxidation is performed by applying an electric current.

6. The method for fabricating an array substrate according to claim 5, characterized in that, The voltage applied during the electrochemical oxidation treatment is 10-100 volts.

7. The method for fabricating an array substrate according to claim 5, characterized in that, The voltage is applied for 10-60 minutes during the electrochemical oxidation treatment.

8. A method for fabricating an array substrate, characterized in that, include: A substrate is provided, the substrate comprising a first region and a second region that are adjacent and disposed in the same layer; A first conductive portion, an insulating layer, and a metal oxide active layer are sequentially stacked on the substrate, and an electrode portion is formed on the substrate. The first conductive portion is located in the first region, the electrode portion is located in the second region, and both the insulating layer and the metal oxide active layer are located in the first region and the second region, respectively. The electrode portion is insulated from both the first conductive portion and the metal oxide active layer. The electrode portion is electrically connected to the active metal oxide layer, and the active metal oxide layer is subjected to electrochemical oxidation treatment to form the active portion; A second conductive portion is formed on the active portion; and Remove the electrode portion; Wherein, the first conductive part is a light-shielding part, and the second conductive part is a gate; The method of sequentially stacking a first conductive portion, an insulating layer, and a metal oxide active layer on the substrate, and forming an electrode portion on the substrate, includes: disposing a conductive material layer on the substrate; patterning the conductive material layer to form a first conductive portion and an electrode portion that are in the same layer and insulated from each other; forming an insulating layer on the first conductive portion and the electrode portion; and forming a metal oxide active layer on the insulating layer.

9. A method for fabricating an array substrate, characterized in that, include: A substrate is provided, the substrate comprising a first region and a second region that are adjacent and disposed in the same layer; A first conductive portion, an insulating layer, and a metal oxide active layer are sequentially stacked on the substrate, and an electrode portion is formed on the substrate. The first conductive portion is located in the first region, the electrode portion is located in the second region, and both the insulating layer and the metal oxide active layer are located in the first region and the second region, respectively. The electrode portion is insulated from both the first conductive portion and the metal oxide active layer. The electrode portion is electrically connected to the active metal oxide layer, and the active metal oxide layer is subjected to electrochemical oxidation treatment to form the active portion; A second conductive portion is formed on the active portion; and Remove the electrode portion; The first conductive part is the source / drain electrode, and the second conductive part is the gate electrode; The method of sequentially stacking a first conductive portion, an insulating layer, and a metal oxide active layer on a substrate, and forming an electrode portion on the substrate, includes: disposing a conductive material layer on the substrate; patterning the conductive material layer to form a first conductive portion and an electrode portion that are insulated from each other on the same layer; forming an insulating layer on the first conductive portion and the electrode portion; and forming a metal oxide active layer on the insulating layer, the metal oxide active layer extending into a via and connecting to the first conductive portion.

10. A method for manufacturing a display panel, characterized in that, The method for preparing the array substrate according to any one of claims 1-9.

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