Light-emitting chip manufacturing method and light-emitting chip

Abstract

The present invention discloses a method for manufacturing a light-emitting chip, comprising providing a growth substrate prepared with crystal grains, thinning the thickness of the growth substrate from the first surface of the growth substrate away from the crystal grains to a first target thickness; bonding the first surface of the growth substrate thinned to the first target thickness to a quantum dot color conversion layer, so that the quantum dot color conversion layer is spaced from the growth substrate after the crystal grains are thinned, and the light emitted by the crystal grains can pass through the thinned growth substrate and enter the quantum dot color conversion layer. At the same time, the present invention also provides a light-emitting chip manufactured by the manufacturing method. Compared with the prior art, the present invention has a simple process, a high yield rate, and can ensure the color conversion efficiency of quantum dots.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and in particular to a light-emitting chip manufacturing method and a light-emitting chip. Background Art

[0002] Quantum dot (QD) materials have excellent photoelectric properties, such as high color purity, adjustable luminescent color, and high fluorescence quantum yield. At present, the display application of quantum dot materials is mainly based on its color conversion characteristics. Usually, ultraviolet light or blue light is used as the excitation source, and green light or red light quantum dots are used to convert the excitation light into the required green light or red light. When quantum dots are exposed to moisture or heat, the fluorescence performance will drop sharply, and the stability will also be reduced. The characteristics of quantum dots being afraid of water and heat have largely restricted the process of quantum dot light-emitting chips.

[0003] With reference to Chinese patent CN202111004407, a chip manufacturing method is disclosed, including: forming a light-emitting functional layer of each sub-pixel on a first substrate to make an epitaxial wafer, transferring the epitaxial wafer to a second substrate by bonding adhesive, peeling off the first substrate, bonding the color conversion layer of the color conversion layer cover plate to the light-emitting side of the epitaxial wafer by bonding adhesive, removing the second substrate of the epitaxial wafer by bonding, and then cutting to form an independent chip result. This scheme uses the second substrate as a transfer carrier to achieve large-scale grain transfer, but it is inevitable to peel off the first substrate (growth substrate) forming the light-emitting functional layer. Laser lift-off (LLO, Laser lift off) is currently commonly used. Laser lift-off will cause certain damage to the interface between the light-emitting functional layer and the first substrate, that is, the quality of the light-emitting surface of the light-emitting functional layer will be reduced. Furthermore, in the chip structure made by this method, the light-emitting side of the light-emitting functional layer is directly adjacent to the color conversion layer through a permanently bonded bonding adhesive. Based on the problem that the fluorescence performance of quantum dots will drop sharply when heated, the chip made by this method has poor heat resistance and poor luminescence effect.

[0004] Therefore, there is an urgent need for a light-emitting chip manufacturing method and a light-emitting chip that can solve the above problems. Summary of the invention

[0005] The object of the present invention is to provide a method for manufacturing a light-emitting chip which can avoid the influence of temperature factors on quantum dots, has fewer process steps and a high yield, and a light-emitting chip manufactured by the manufacturing method.

[0006] To achieve the above-mentioned purpose, the present invention discloses a method for manufacturing a light-emitting chip, comprising: providing a growth substrate prepared with crystal grains, and thinning the thickness of the growth substrate from a first surface of the growth substrate away from the crystal grains to a first target thickness; bonding the first surface of the growth substrate whose thickness is thinned to the first target thickness to a quantum dot color conversion layer, so that the quantum dot color conversion layer is spaced from the growth substrate after the crystal grains are thinned, and light emitted by the crystal grains can pass through the thinned growth substrate and enter the quantum dot color conversion layer.

[0007] Preferably, the quantum dot color conversion layer comprises a substrate having a porous structure and quantum dots filled in the porous structure, and two opposite sides of the quantum dot color conversion layer are respectively a first side having a porous structure and a second side away from the porous structure.

[0008] Specifically, the first surface of the growth substrate is bonded to the first surface of the quantum dot color conversion layer, or the first surface of the growth substrate is bonded to the second surface of the quantum dot color conversion layer.

[0009] Specifically, the manufacturing method also includes preparing the quantum dot color conversion layer, specifically including: thinning the thickness of the substrate with a porous structure to a second target thickness; filling quantum dots in at least part of the holes of the substrate after the thickness is thinned to the second target thickness. This solution first thins the thickness of the substrate with a porous structure to a target thickness, and then performs quantum dot filling and bonding of the substrate to a second substrate with multiple grains, which can avoid the failure or performance degradation of quantum dots caused by high temperature conditions, grinding fluid, polishing fluid, etc. during the thinning of the substrate, thereby ensuring the color conversion efficiency of the quantum dots.

[0010] More specifically, thinning the thickness of a substrate with a porous structure to a second target thickness specifically includes: providing a support structure, applying wax to fix the first surface of the substrate to the support structure; grinding and polishing the second surface of the substrate to thin the thickness of the substrate to the second target thickness; removing the wax to separate the first surface of the substrate from the support structure.

[0011] Specifically, the first surface of the growth substrate is bonded to the second surface of the quantum dot color conversion layer; quantum dots are filled in at least part of the holes of the substrate before the growth substrate is bonded to the quantum dot color conversion layer, or quantum dots are filled in at least part of the holes of the substrate after the growth substrate is bonded to the quantum dot color conversion layer.

[0012] Specifically, the warpage value of the substrate is less than or equal to 35 micrometers.

[0013] Preferably, the growth substrate is a sapphire substrate or a silicon carbide substrate.

[0014] Preferably, when the first surface of the growth substrate thinned to the first target thickness is bonded to the quantum dot color conversion layer: the growth substrate is used to support the crystal grains to bond the first surface of the growth substrate to the quantum dot color conversion layer. This solution eliminates the need to use a temporary bonding substrate with a temporary bonding adhesive to assist in the conversion and movement of the crystal grains during production, avoids the need to subsequently peel off the temporary bonding substrate and clean the temporary bonding adhesive, and simplifies the process.

[0015] Specifically, the first target thickness of the growth substrate is 50 um to 100 um.

[0016] Preferably, before the first surface of the growth substrate thinned to a first target thickness is bonded to the quantum dot color conversion layer: the second surface of the growth substrate prepared with grains is bonded to a supporting substrate so that the grains are bonded to the supporting substrate, and the supporting substrate supports the grains and the growth substrate.

[0017] Specifically, after the first surface of the growth substrate is bonded to the quantum dot color conversion layer, the bonding between the crystal grain and the support substrate is released.

[0018] Preferably, the first target thickness of the growth substrate is 35 um to 60 um.

[0019] Preferably, a plurality of crystal grains are prepared on the growth substrate, and after the first surface of the growth substrate thinned to a first target thickness is bonded to the quantum dot color conversion layer, cutting is performed along the gaps between the crystal grains to obtain a light-emitting chip containing at least one of the crystal grains.

[0020] To achieve the above object, the present invention further discloses a light-emitting chip, which is manufactured by the manufacturing method described above.

[0021] Compared with the prior art, the present invention directly thins the growth substrate prepared with the grains from the first side away from the grains, and then bonds the first side of the thinned growth substrate to the quantum dot color conversion layer, which can not only effectively control the thickness of the light-emitting chip so that light can pass through the growth substrate into the quantum dot color conversion layer, but also space the quantum dot color conversion layer from the growth substrate after the grains are thinned, preventing the heat generated when the grains emit light from affecting the performance of the quantum dots, and ensuring the color conversion efficiency of the quantum dots. On the other hand, the present invention does not need to peel off the grains and the growth substrate, which can prevent damage to the interface between the grains and the growth substrate during laser peeling, which affects the light quality and yield of the grains, so the present invention has a high yield and good light quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 The figure is a flow chart of the method for manufacturing the light emitting chip of the present invention.

[0023] Figure 2 It is a process schematic diagram of the light-emitting chip manufacturing method in the first embodiment of the present invention.

[0024] Figure 3 It is a structural diagram of a light-emitting chip supported by the light-emitting chip manufacturing method in the first embodiment of the present invention.

[0025] Figure 4 FIG. 4 is a schematic diagram of the process of manufacturing a light emitting chip according to the second embodiment of the present invention.

[0026] Figure 5 It is a structural diagram of a light-emitting chip supported by a light-emitting chip manufacturing method in a second embodiment of the present invention.

[0027] Figure 6 FIG. 4 is a schematic diagram of the process of manufacturing a light emitting chip according to the third embodiment of the present invention.

[0028] Figure 7 FIG. 4 is a schematic diagram of the process of manufacturing a light emitting chip according to the fourth embodiment of the present invention. DETAILED DESCRIPTION

[0029] In order to explain the content, structural features, achieved purposes and effects of the present invention in detail, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0030] The technical solution of the embodiment of the present invention is described in detail below with reference to the accompanying drawings:

[0031] refer to Figure 1 , a method for manufacturing a light-emitting chip according to an embodiment of the present invention comprises the following steps: S1, providing a growth substrate 10 (refer to Figure 2 S2, reducing the thickness of the growth substrate 10 from the first surface of the growth substrate 10 away from the grain 11 to a first target thickness (reference Figure 2 S3, bonding the first surface of the growth substrate 10 thinned to a first target thickness to the quantum dot color conversion layer 20 (refer to Figure 2 c1) in the figure, so that the quantum dot color conversion layer 20 is spaced apart from the thinned growth substrate 10 of the grain 11, and the light emitted by the grain 11 can pass through the thinned growth substrate 10 into the quantum dot color conversion layer 20, and is converted by the quantum dot color conversion layer 20 into light of a preset color and emitted.

[0032] refer to Figure 2In a1, the growth substrate 10 includes a first surface and a second surface opposite to each other, and the crystal grains 11 are prepared on the second surface of the growth substrate 10. In step S2, the growth substrate 10 is thinned to obtain a thinned growth substrate 10 (refer to Figure 2 a2 in the figure). The first surface of the growth substrate 10 is ground and polished by a polishing and grinding device, so as to thin the growth substrate 10 to a first target thickness.

[0033] The step S1 of providing a growth substrate 10 with a crystal grain 11 specifically includes: first providing a growth substrate 10 (such as a sapphire substrate, a silicon carbide substrate, or other light-transmissive substrate), the thickness of the growth substrate 10 can be, for example, 650um or other thickness; then, growing an AlN buffer layer on the growth substrate 10 by physical vapor deposition (PVD); then, epitaxially growing an epitaxial wafer on the AlN buffer layer by hydride vapor phase epitaxy (HVPE), the epitaxial wafer including an N-GaN epitaxial layer, an active layer, and a P-GaN epitaxial layer; etching and depositing the epitaxial wafer to form a P electrode electrically connected to the P-GaN epitaxial layer and an N electrode electrically connected to the N-GaN epitaxial layer. The preparation of the crystal grain 11 on the growth substrate 10 is now completed. The specific process of preparing the crystal grains 11 on the growth substrate 10 and the structure of the crystal grains 11 are not limited to the above embodiments. The specific process of preparing the light-emitting crystal grains 11 on the growth substrate 10 is common knowledge in the art and will not be described in detail here.

[0034] The crystal grain 11 in this embodiment is a crystal grain that emits blue light. The quantum dot 23 can be a quantum dot that converts the blue light emitted by the crystal grain 11 into red light, or a quantum dot that converts the blue light emitted by the crystal grain 11 into green light, etc.

[0035] For step S2, in this embodiment, the thickness of the growth substrate 10 is thinned to 60um. That is, the first target thickness is 60um. In this embodiment, when executing step S3, the growth substrate 10 is used to support the grains 11 to bond the first surface of the growth substrate 10 to the quantum dot color conversion layer 20. In this embodiment, no special support substrate is required for transfer support. Of course, the value of the first target thickness is not limited to 60um, and can be between 50um and 100um according to actual needs.

[0036] For step S3, bonding the first surface of the thinned growth substrate 10 away from the crystal grains 11 to the quantum dot color conversion layer 20 specifically includes: firstly, a layer of bonding glue 60 is spin-coated on the first surface of the growth substrate 10 by a glue spreader, and the first surface of the growth substrate 10 is bonded to one side surface of the quantum dot color conversion layer 20 by the bonding glue 60. Alternatively, a layer of bonding glue 60 is spin-coated on one side surface of the quantum dot color conversion layer 20 by a glue spreader, and then the quantum dot color conversion layer 20 is bonded to the first surface of the growth substrate 10 by the bonding glue 60.

[0037] When bonding the growth substrate 10 to the quantum dot color conversion layer 20, the bonding adhesive 60 used is a permanent bonding adhesive, which can make the growth substrate 10 and the quantum dot color conversion layer 20 adhere to each other and achieve permanent bonding after secondary curing. The coating thickness of the bonding adhesive 60 is generally 3-5um, and the bonding adhesive 60 can be a thermal curing adhesive, a UV curing adhesive, etc.

[0038] The quantum dot color conversion layer 20 includes a substrate 21 having a porous structure 22 and quantum dots 23 filled in the porous structure 22. The two opposite sides of the quantum dot color conversion layer 20 are respectively a first side having the porous structure 22 and a second side away from the porous structure 22.

[0039] The holes of the porous structure 211 account for more than 70% of the surface area of ​​the entire porous structure 211, the diameter of the holes is 500nm-1.5um, and the depth of the holes is 8-10um. Light can be continuously reflected in the holes, and a better light color conversion effect can be achieved.

[0040] Of course, the structure of the quantum dot color conversion layer 20 is not limited to this embodiment.

[0041] In this embodiment, the first surface of the growth substrate 10 is bonded to the first surface of the quantum dot color conversion layer 20 .

[0042] refer to Figure 2 The method for manufacturing a light-emitting chip further includes manufacturing a quantum dot color conversion layer 20. The manufacturing of the quantum dot color conversion layer 20 includes: referring to Figure 2 b1 in the figure, providing a substrate 21 having a porous structure 211, referring to Figure 2 b2 in which the thickness of the substrate 21 having the porous structure 211 is reduced to a second target thickness; Figure 2 b3 in which quantum dots are filled in at least a portion of the holes of the substrate 21 after the thickness is reduced to the second target thickness. After the filling is completed, the growth substrate 10 is bonded to the first surface of the quantum dot color conversion layer 20 .

[0043] Among them, all the holes in the substrate 21 can be filled with quantum dots 23, and all the grains 11 corresponding to the manufactured light-emitting chip can convert the light color they emit into the target light color through the quantum dots 23; or only some of the holes in the substrate 21 can be filled with quantum dots 12, and some of the grains 11 corresponding to the manufactured light-emitting chip can convert the light color they emit into the target light color through the quantum dots 23, while some of the grains 11 continue to emit the original light color because no quantum dots 23 are set on the light-emitting side.

[0044] The method of thinning the thickness of the substrate 21 having the porous structure 211 to the second target thickness specifically includes: first, providing a support structure, and fixing the first surface (porous structure 211) of the substrate 21 to the support structure by waxing; then, grinding and polishing the second surface of the substrate 21 by a polishing and grinding device, thereby thinning the thickness of the substrate 21 to the second target thickness; then, removing the wax to separate the first surface of the substrate 21 from the support structure, specifically, the wax can be cleaned by a dewaxing solution, and then the substrate 21 can be dried.

[0045] The preparation of the quantum dot color conversion layer 20 also includes the preparation of the substrate 21: first, a thickened substrate (such as a sapphire substrate, a silicon carbide substrate, etc.) is provided, and the thickness of the thickened substrate can be, for example, 800um; then, a thickened AlN buffer layer is grown on the substrate by physical vapor deposition (PVD), and the thickness of the AlN buffer layer can be, for example, 200nm; then, a thickened AlN buffer layer is grown by hydride vapor phase epitaxy (HVPE) An N-GaN epitaxial layer is grown on the AlN buffer layer by a High Velocity Epitaxy (HVPE) method, and the thickness of the N-GaN epitaxial layer can be, for example, 5um; thus, a substrate 21 without holes is prepared. Since the thickness of the AlN buffer layer is relatively thick, the stress effect during the growth of the N-GaN epitaxial layer can be reduced, thereby reducing the warpage value of the manufactured substrate 21; then, a plurality of holes are formed in the N-GaN epitaxial layer of the substrate 21 by laser etching, electrochemical etching, photolithography, etc., to obtain a substrate 21 with a warpage value less than or equal to 35 microns.

[0046] In this embodiment, the warpage value of the substrate 21 is less than or equal to 35 microns. Since the warpage value of the substrate 21 is small, the thickness of the substrate 21 is thinned to the target thickness before filling the quantum dots 23 and bonding the substrate 21 to the growth substrate 10 having a plurality of crystal grains 11, and cracking will not occur during the thinning process due to the small overall thickness of the substrate 21 and the weak strength and stability.

[0047] In this embodiment, before thinning the substrate 21, the total thickness of the substrate 21 having the porous structure 211 is about 600-800 um, and after thinning the substrate 21, the total thickness of the substrate 212 having the porous structure 211 is less than 100 um, that is, the second target thickness is less than 100 um. Of course, the specific thickness of the substrate 21 before and after thinning is not a limitation in the specific implementation.

[0048] In this embodiment, a plurality of crystal grains 11 are prepared on the growth substrate 10, and the manufacturing method further comprises: after bonding the first surface of the growth substrate 10 thinned to a first target thickness to the quantum dot color conversion layer 20, S4 is cut along the gaps between the crystal grains 11 to obtain a light-emitting chip 100 (such as Figure 2 c2 and Figure 3 As shown). Of course, the light-emitting unit formed after the first surface of the growth substrate 10 and the quantum dot color conversion layer 20 are bonded together may not be cut, and the whole unit may be used as a light-emitting chip.

[0049] In this embodiment, one light emitting chip 100 has one die 11 . In another embodiment, one light emitting chip has a plurality of die 11 , such as 2, 3, etc.

[0050] For example, when the light-emitting chip includes three grains, for example, the three grains emit different light colors, the initial light color emitted by the grains is blue light, the holes corresponding to one of the grains in the light-emitting chip are filled with red light quantum dots, the holes corresponding to one of the grains are filled with green light quantum dots, and the holes corresponding to one of the grains are not filled with quantum dots, so that the manufactured light-emitting chip can achieve RGB full-color display.

[0051] refer to Figure 4 Different from the first embodiment, in the second embodiment, the first surface of the growth substrate 10 is bonded to the second surface of the quantum dot color conversion layer 20. In this embodiment, quantum dots are filled in at least part of the holes of the substrate 21 before the growth substrate 10 is bonded to the quantum dot color conversion layer 20.

[0052] refer to Figure 5 , cutting is performed along the gaps between the crystal grains 11 to obtain a light emitting chip 100a including at least one crystal grain 11. In this embodiment, one light emitting chip 100a has one crystal grain 11, and in another embodiment, one light emitting chip has multiple crystal grains 11, such as 2, 3, etc.

[0053] refer to Figure 6Different from the first embodiment, in the third embodiment, the first surface of the growth substrate 10 is bonded to the second surface of the quantum dot color conversion layer 20. After the growth substrate 10 is bonded to the quantum dot color conversion layer 20, quantum dots are filled in at least part of the holes of the substrate 21 (refer to Figure 6 b3 in ).

[0054] refer to Figure 7 Different from the first to third embodiments, in the fourth embodiment, before bonding the second surface of the growth substrate 10 thinned to the first target thickness to the quantum dot color conversion layer 20 in step S3: bonding the first surface of the growth substrate 10 prepared with the crystal grains 11 to a support substrate 50, so that the crystal grains 11 are bonded to the support substrate 50 (refer to Figure 7 d1 in the figure), the support substrate 50 supports the crystal grain 11 and the growth substrate 10; after bonding the first surface of the growth substrate 10 to the quantum dot color conversion layer 20, the crystal grain 11 and the support substrate 50 are released from bonding (refer to Figure 7 The growth substrate 10 uses the support substrate 50 for transfer support, so the thickness of the growth substrate 10 itself can be further reduced, and the value of the first target thickness can be set between 35um and 60um according to actual needs to meet the size requirement of the light-emitting chip with a smaller thickness.

[0055] Specifically, in this embodiment, after the crystal grain 11 is prepared on the growth substrate 10 , the side of the crystal grain 11 facing away from the growth substrate 10 is bonded and fixed to the support substrate 50 in a vacuum environment.

[0056] In this embodiment, the second surface of the growth substrate 10 prepared with the crystal grains 11 is bonded to a support substrate 50 for temporary bonding, and the bonding is performed using a temporary bonding adhesive 70. Of course, a substrate with an adhesive on one side, such as a glass substrate with an adhesive on one side, can also be directly used as the support substrate 50. The temporary bonding method is not limited to the bonding adhesive, and other temporary bonding methods can also be used for bonding.

[0057] In this embodiment, the bonding between the crystal grains 11 and the support substrate 50 is released, so that the thickness of the supported light-emitting chip can be made thinner. Of course, in some embodiments, this step can be omitted, so that the supported light-emitting chip has a support substrate 50. In some embodiments, the support substrate 50 is directly made into a conductive circuit board to form a control circuit of the light-emitting chip. In this case, the release of bonding between the plurality of crystal grains 11 and the support substrate 50 can be omitted. In this embodiment, the first surface of the growth substrate 10 prepared with the crystal grains 11 is bonded to a support substrate 50 as a permanent bond.

[0058] In this embodiment, the preparation method of the quantum dot color conversion layer 20 is similar to that in the first embodiment, and when the first surface of the growth substrate 10 is bonded to the first surface of the quantum dot color conversion layer 20, a thinned growth substrate 10 is spaced between the grains 11 and the light-emitting material (quantum dots 23) of the quantum dot light-emitting side 20.

[0059] Of course, the first surface of the growth substrate 10 can also be bonded to the second surface of the quantum dot color conversion layer 20, and the thinned growth substrate 10 and the base plate 21 are separated between the grains 11 and the light-emitting material (quantum dots 23) of the quantum dot light-emitting side 20. In this embodiment, the quantum dots 23 can be filled before the first surface of the growth substrate 10 is bonded to the second surface of the quantum dot color conversion layer 20, or can be filled after the first surface of the growth substrate 10 is bonded to the second surface of the quantum dot color conversion layer 20.

[0060] The above disclosure is only a preferred embodiment of the present invention, which cannot be used to limit the scope of the present invention. Therefore, equivalent changes made according to the claims of the present invention are all within the scope of the present invention.

Claims

1. A method for manufacturing a light-emitting chip, characterized in that: include: Providing a growth substrate prepared with crystal grains, and reducing the thickness of the growth substrate from a first surface of the growth substrate away from the crystal grains to a first target thickness; Bonding the first surface of the growth substrate thinned to a first target thickness to the quantum dot color conversion layer, so that the quantum dot color conversion layer is spaced from the growth substrate after the grains are thinned, and light emitted by the grains can pass through the thinned growth substrate and enter the quantum dot color conversion layer; The quantum dot color conversion layer includes a substrate with a porous structure and quantum dots filled in the porous structure. Two opposite sides of the quantum dot color conversion layer are respectively a first side with a porous structure and a second side away from the porous structure.

2. The method for manufacturing a light-emitting chip according to claim 1, characterized in that: The first surface of the growth substrate is bonded to the first surface of the quantum dot color conversion layer, or the first surface of the growth substrate is bonded to the second surface of the quantum dot color conversion layer.

3. The method for manufacturing a light-emitting chip according to claim 1, wherein: The method also includes preparing the quantum dot color conversion layer, specifically including: reducing the thickness of the substrate having the porous structure to a second target thickness; At least a portion of the holes of the substrate after the thickness is reduced to the second target thickness is filled with quantum dots.

4. The method for manufacturing a light-emitting chip according to claim 1, wherein: The first surface of the growth substrate is bonded to the second surface of the quantum dot color conversion layer; Quantum dots are filled in at least part of the holes of the substrate before the growth substrate is bonded to the quantum dot color conversion layer, or quantum dots are filled in at least part of the holes of the substrate after the growth substrate is bonded to the quantum dot color conversion layer.

5. The method for manufacturing a light-emitting chip according to claim 3, wherein: The method of reducing the thickness of the substrate having a porous structure to a second target thickness specifically includes: providing a support structure, applying wax to fix the first surface of the substrate to the support structure; Grinding and polishing the second surface of the substrate to reduce the thickness of the substrate to a second target thickness; The wax is removed to separate the first side of the substrate from the support structure.

6. The method for manufacturing a light-emitting chip according to claim 5, characterized in that: The warpage value of the substrate is less than or equal to 35 micrometers.

7. The method for manufacturing a light-emitting chip according to claim 1, wherein: The growth substrate is a sapphire substrate or a silicon carbide substrate.

8. The method for manufacturing a light-emitting chip according to claim 1, wherein: When the first surface of the growth substrate thinned to a first target thickness is bonded to the quantum dot color conversion layer: the crystal grains are supported by the growth substrate to bond the first surface of the growth substrate to the quantum dot color conversion layer.

9. The method for manufacturing a light-emitting chip according to claim 8, wherein: The first target thickness of the growth substrate is 50um-100um.

10. The method for manufacturing a light-emitting chip according to claim 1, wherein: Before bonding the first surface of the growth substrate thinned to a first target thickness to the quantum dot color conversion layer: bonding the second surface of the growth substrate prepared with grains to a supporting substrate so that the grains are bonded to the supporting substrate, and the supporting substrate supports the grains and the growth substrate.

11. The method for manufacturing a light-emitting chip according to claim 10, wherein: After bonding the first surface of the growth substrate to the quantum dot color conversion layer, the bonding between the crystal grain and the support substrate is released.

12. The method for manufacturing a light-emitting chip according to claim 10, wherein: The first target thickness of the growth substrate is 35um-60um.

13. The method for manufacturing a light-emitting chip according to claim 1, wherein: A plurality of crystal grains are prepared on the growth substrate. After the first surface of the growth substrate thinned to a first target thickness is bonded to a quantum dot color conversion layer, the crystal grains are cut along the gaps between the crystal grains to obtain a light-emitting chip containing at least one crystal grain.

14. A light-emitting chip, characterized in that: The light-emitting chip is manufactured by the manufacturing method according to any one of claims 1 to 13.

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