Substrate cleaning apparatus and substrate cleaning method

Abstract

Embodiments provide a substrate cleaning apparatus and a substrate cleaning method capable of suppressing attachment of foreign matter to a surface of a substrate. A substrate cleaning apparatus according to an embodiment has a processing tank, at least one nozzle, and a sweeping mechanism. The processing tank is capable of housing a plurality of substrates arranged in a thickness direction of the substrates. The nozzle extends in the thickness direction and spouts a cleaning liquid toward the substrates housed in the processing tank. The sweeping mechanism causes the nozzle to sweep along an outer peripheral edge portion of the substrates.

Description

[0001] This application claims priority to Japanese Patent Application No. 2021-039054 (filed on March 11, 2021). The entire contents of the basic application are incorporated herein by reference. Technical Field

[0002] This embodiment relates to a substrate cleaning apparatus and a substrate cleaning method. Background Technology

[0003] In batch wafer cleaning equipment, when the wafer is lifted from the processing tank containing cleaning fluid, foreign matter is sometimes transferred from the outer periphery of the wafer to the surface of the wafer via the cleaning fluid. Summary of the Invention

[0004] The problem to be solved by the present invention is to provide a substrate cleaning apparatus and a substrate cleaning method that can suppress foreign matter from adhering to the surface of the substrate.

[0005] One embodiment of the substrate cleaning apparatus includes a processing tank, at least one nozzle, and a sweeping mechanism. The processing tank is capable of accommodating multiple substrates arranged along their thickness direction. The nozzle extends along the thickness direction and sprays cleaning fluid onto the substrates housed in the processing tank. The sweeping mechanism causes the nozzle to sweep along the outer periphery of the substrates. Attached Figure Description

[0006] Figure 1 This is a cross-sectional view of the substrate cleaning apparatus of the first embodiment when it is cut along the in-plane direction of the wafer.

[0007] Figure 2 This is a cross-sectional view of the substrate cleaning apparatus of the first embodiment when cut along the thickness direction of the wafer.

[0008] Figure 3 This is a flowchart illustrating the substrate cleaning method according to the first embodiment.

[0009] Figure 4 This is a diagram illustrating the substrate cleaning method according to the first embodiment.

[0010] Figure 5 This is a cross-sectional view of the substrate cleaning apparatus of the second embodiment when it is cut along the thickness direction of the wafer.

[0011] Figure 6 This is a perspective view showing the substrate cleaning apparatus according to the third embodiment.

[0012] Label Explanation

[0013] 2…processing tank; 31…upper movable nozzle; 32…left movable nozzle; 33…right movable nozzle; 71…first arm; 72…second arm; 73…third arm. Detailed Implementation

[0014] Embodiments of the present invention will now be described with reference to the accompanying drawings. Figures 1-6 In Chinese, identical or similar structures are assigned the same label, and redundant descriptions are omitted.

[0015] (First Implementation)

[0016] Figure 1 This is a cross-sectional view of the substrate cleaning apparatus 1 of the first embodiment when cut along the in-plane direction of the wafer W. Figure 2 This is a cross-sectional view of the substrate cleaning apparatus 1 according to the first embodiment, cut along the thickness direction of the wafer W. For example... Figure 1 As shown, the substrate cleaning apparatus 1 according to the first embodiment includes a processing tank 2, an upper movable nozzle 31, a left movable nozzle 32, a right movable nozzle 33, a fixed nozzle 4, and a spray control unit 6. Furthermore, the substrate cleaning apparatus 1 includes a first arm 71, a second arm 72, a third arm 73, a sweeping control unit 8, and a clamp 9.

[0017] Processing tank 2 can hold multiple wafers W along the thickness direction d of wafer W (refer to...). Figure 2 Arranged and stored. Figure 1 In the example shown, the processing tank 2 has an opening 2a at its upper end, through which the wafer W can be moved into or out of the processing tank 2 from above. More specifically, within the processing tank 2, the wafer W is held upright by a clamp 9. Figure 2 As shown, the fixture 9 is provided with a plurality of narrow slots 91 at intervals along the thickness direction d, which are capable of holding the wafer W in an upright state. The slot direction of the narrow slots 91 is orthogonal to the thickness direction d.

[0018] The upper movable nozzle 31 extends along the thickness direction d and is movable within an arc-shaped first sweeping range R1 along the upper outer periphery of the wafer W. The upper movable nozzle 31 has a first nozzle 51 that sprays cleaning fluid L1 onto one surface of the wafer W, and a second nozzle 52 that sprays cleaning fluid L1 onto the other surface of the wafer W. The direction in which the nozzles 51 and 52 spray the cleaning fluid L1 can be inclined relative to the in-plane direction of the wafer W. The upper movable nozzle 31 is connected to a supply source (not shown) for the cleaning fluid L1. The upper movable nozzle 31 sprays the cleaning fluid L1 supplied by the supply source from above onto the wafer W housed in the processing tank 2 through the first nozzle 51 and the second nozzle 52. The cleaning fluid L1 can be, for example, a solution containing ammonia and hydrogen peroxide, or pure water, or a solution and pure water can be sprayed sequentially. The cleaning fluid L1 sprayed onto the wafer W is discharged to the outside of the processing tank 2 through a discharge port (not shown) provided at the bottom of the processing tank 2.

[0019] The left movable nozzle 32 extends along the thickness direction d and can move within an arc-shaped second sweeping range R2 along the left outer periphery of the wafer W. Similar to the upper movable nozzle 31, the left movable nozzle 32 also has a first nozzle 51 and a second nozzle 52, and is connected to a supply source for the cleaning fluid L1. The left movable nozzle 32 sprays the cleaning fluid L1 supplied by the supply source from the left side onto the wafer W housed in the processing tank 2 through the first nozzle 51 and the second nozzle 52.

[0020] The right-side movable nozzle 33 extends along the thickness direction d and can move within an arc-shaped third sweeping range R3 along the outer right periphery of the wafer W. Similar to the upper movable nozzle 31, the right-side movable nozzle 33 also has a first nozzle 51 and a second nozzle 52, and is connected to a supply source for the cleaning fluid L1. The right-side movable nozzle 33 sprays the cleaning fluid L1 supplied by the supply source from the right side onto the wafer W housed in the processing tank 2 through the first nozzle 51 and the second nozzle 52.

[0021] The first arm 71 holds the upper movable nozzle 31 while sweeping it within the first sweeping range R1. The first arm 71 can be, for example, a robotic arm whose lower end is connected to the upper movable nozzle 31. Multiple first arms 71 can be provided at intervals along the thickness direction d. The upper movable nozzle 31 sprays cleaning fluid L1 onto the wafer W while sweeping within the first sweeping range R1 via the first arm 71.

[0022] The second arm 72 holds the left movable nozzle 32 while sweeping it within the second sweeping range R2. The second arm 72 can be, for example, a robotic arm whose lower end is connected to the left movable nozzle 32. Multiple second arms 72 can be provided at intervals along the thickness direction d. The left movable nozzle 32 sprays cleaning fluid L1 onto the wafer W while sweeping within the second sweeping range R2 via the second arm 72.

[0023] The third arm 73 maintains the right-side movable nozzle 33 while sweeping it within the third sweeping range R3. The third arm 73 can be, for example, a robotic arm whose lower end is connected to the right-side movable nozzle 33. Multiple third arms 73 can be provided at intervals along the thickness direction d. While sweeping within the third sweeping range R3 via the third arm 73, the right-side movable nozzle 33 sprays cleaning fluid L1 onto the wafer W.

[0024] The fixed nozzle 4 is fixed inside the treatment tank 2, and sprays cleaning fluid L2 into the fixture 9 through the nozzle 53. If the fixture 9 is made of quartz, the cleaning fluid L2 sprayed from the fixed nozzle 4 can be dilute hydrofluoric acid.

[0025] The spray control unit 6 controls the spraying of cleaning fluid L1 and L2 by nozzles 51, 52, and 53. The spray control unit 6 may, for example, consist of multiple solenoid valves individually provided for each nozzle 51, 52, and 53, and a control unit that individually energizes and controls the opening and closing of each solenoid valve.

[0026] The sweep control unit 8 controls the sweeping of the movable nozzles 31-33 based on the arms 71-73. The sweep control unit 8 may be composed of, for example, a drive source such as an electric motor, a transmission mechanism such as gears that transmits the driving force of the drive source to the arms 71-73, and a control unit that controls the power supply to the drive source.

[0027] The substrate cleaning method of the first embodiment of the substrate cleaning apparatus 1 described above will now be described. Figure 3 This is a flowchart illustrating the substrate cleaning method according to the first embodiment. Figure 4 This is a diagram illustrating the substrate cleaning method according to the first embodiment.

[0028] First, such as Figure 3 As shown, a fixture 9 and a wafer W are set in the processing tank 2 (step S1). The fixture 9 and the wafer W can be set up as follows: the fixture 9 is raised by a lift (not shown) set in the processing tank 2, the wafer W is placed on the raised fixture 9 by a robotic arm, and the fixture 9 with the wafer W is lowered by the lift.

[0029] Then, the movable nozzles 31-33 are guided into the processing tank 2 through the arms 71-73, so that the movable nozzles 31-33 are in their initial positions within their respective sweeping ranges R1-R3 (step S2).

[0030] Then, while the movable nozzles 31-33 sweep through the arms 71-73, cleaning fluid L1 is sprayed onto the wafer W through the nozzles 51 and 52 from the movable nozzles 31-33 (step S3). At this time, the upper movable nozzle 31 can sweep from the upper end of the first sweeping range R1 to the lower left end, and then the left movable nozzle 32 can sweep from the upper end of the second sweeping range R2 to the lower end. Furthermore, before and after these series of sweeps, the upper movable nozzle 31 can sweep from the upper end of the first sweeping range R1 to the lower right end, and then the right movable nozzle 33 can sweep from the upper end of the third sweeping range R3 to the lower end. By sweeping in this way, foreign matter can be effectively removed from the surface of the wafer W downwards. In addition, as Figure 4 As shown, the fixture 9 is not cleaned during the cleaning of wafer W.

[0031] Then, while the spraying of cleaning fluid L1 from the left movable nozzle 32 and the right movable nozzle 33 continues, the upper movable nozzle 31 is withdrawn from the treatment tank 2 via the first arm 71 (step S4).

[0032] Then, while the spraying of cleaning fluid L1 from the left movable nozzle 32 and the right movable nozzle 33 continues, the wafer W is removed from the processing tank 2 (step S5). Figure 4 As shown, the wafer W is removed by the robotic arm 10. While the wafer W is being removed upwards, the cleaning fluid L1 is continuously sprayed from the movable nozzle 32 on the left side and the movable nozzle 33 on the right side, thereby effectively removing foreign matter from the lower end of the wafer W. In addition, the robotic arm 10 transports the wafer W removed from the processing tank 2 to a drying tank (not shown) for drying.

[0033] Then, the left movable nozzle 32 is withdrawn from the processing tank 2 by the second arm 72, and the right movable nozzle 33 is withdrawn from the processing tank 2 by the third arm 73 (step S6).

[0034] Then, as Figure 4 As shown, cleaning fluid L2 is sprayed from the fixed nozzle 4, thereby cleaning the fixture 9 (step S7).

[0035] As described above, according to the first embodiment, by sweeping along the outer periphery of the wafer W with movable nozzles 31-33 while spraying cleaning fluid L1 from the movable nozzles 31-33 onto the wafer W, it is possible to suppress foreign matter from adhering to the surface of the wafer W.

[0036] Furthermore, by using multiple movable nozzles 31-33, the cleaning time for the wafer W can be shortened. The number of movable nozzles is not limited to three. In addition, by using only one movable nozzle, the number of components and cost can be reduced.

[0037] Furthermore, the movable nozzles 31-33 have a first nozzle 51 that sprays cleaning fluid onto one surface of the wafer W and a second nozzle 52 that sprays cleaning fluid onto the other surface, thereby enabling proper cleaning of the wafer W.

[0038] (Second Implementation)

[0039] The following describes a second embodiment in which the ejection of the first nozzle 51 and the second nozzle 52 is controlled in accordance with whether or not the wafer W is held in the narrow slot 91. Figure 5 This is a cross-sectional view showing the side view of the substrate cleaning apparatus 1 according to the second embodiment.

[0040] In the second embodiment, the spray control unit 6 receives signals from the conveying device (not shown) that transports unprocessed wafers W to the processing tank 2, indicating whether or not wafers W are held in each of the narrow slots 91. The spray control unit 6 detects whether or not wafers W are held in each of the narrow slots 91 based on the received signals. Based on the detection results, the spray control unit 6 controls whether the first nozzle 51 and the second nozzle 52 spray cleaning fluid L1. Specifically, as... Figure 5 As shown, the spray control unit 6 outputs an ON signal to the first nozzle 51 and the second nozzle 52 corresponding to the narrow slot 91 where the wafer W is held, indicating that the cleaning fluid L1 should be sprayed, so that the cleaning fluid L1 is sprayed. The ON signal may be, for example, a signal used to open a solenoid valve. On the other hand, the spray control unit 6 does not output an ON signal to the first nozzle 51 and the second nozzle 52 corresponding to the narrow slot 91 where the wafer W is not held, so that the cleaning fluid is not sprayed.

[0041] According to the second embodiment, the driving of unnecessary nozzles 51 and 52 can be prevented, thus reducing power consumption and the amount of medicine used.

[0042] (Third Implementation)

[0043] The third embodiment having a guide section 11 that guides the sweeping of movable nozzles 31 to 33 will now be described. Figure 6 This is a perspective view showing the substrate cleaning apparatus 1 according to the third embodiment. (See attached image.) Figure 6As shown, in the third embodiment, an arc-shaped guide portion 11 is provided at the lower end of the first arm portion 71 to guide the sweeping of the upper movable nozzle 31. The guide portion 11 can, for example, slide along the structure 12 while contacting a structure 12 with a shape similar to the guide portion 11 provided on the processing tank 2 side, thereby guiding the sweeping of the upper movable nozzle 31 based on the first arm portion 71. Similarly, guide portions 11 are also provided in the second arm portion 72 and the third arm portion 73. The positions of the guide portions 11 in each arm portion 71-73 are staggered along the thickness direction of the wafer W so that they do not interfere with each other in the circumferential direction of the wafer W. Alternatively, the guide portion 11 can also be a guide groove guiding the sweeping of the movable nozzles 31-33 based on the arms 71-73.

[0044] According to the third embodiment, the sweeping of the movable nozzles 31 to 33 is guided by the guide section 11, thereby enabling more appropriate cleaning of the wafer W.

[0045] Several embodiments have been described above, but these embodiments are merely illustrative and not intended to limit the scope of the invention. The novel apparatus and method described in this specification can be implemented in a wide variety of other forms. Furthermore, various omissions, substitutions, and modifications can be made to the apparatus and method described in this specification without departing from the spirit of the invention. It should be understood that the appended claims and their equivalents include such forms and modifications contained within the scope or spirit of the invention.

Claims

1. A substrate cleaning apparatus, comprising: The processing tank is capable of accommodating and storing multiple substrates arranged along the thickness direction of the substrates. At least one nozzle extends along the thickness direction to spray cleaning fluid onto the substrate housed in the processing tank. as well as The sweeping mechanism causes the nozzle to sweep along the outer periphery of the substrate. The nozzle is provided in multiple parts. The sweeping mechanism causes the plurality of nozzles to sweep within a plurality of sweeping ranges along the outer periphery of the substrate. The nozzle has: a first nozzle for spraying the cleaning liquid onto a first surface of the substrate; and a second nozzle for spraying the cleaning liquid onto a second surface of the substrate opposite to the first surface. The substrate cleaning apparatus further comprises: A holding section, disposed within the processing tank, has multiple grooves spaced apart along the thickness direction to hold the substrate in an upright position; and The control unit detects whether the substrate is retained in the tank, and controls whether the first nozzle and the second nozzle spray the cleaning fluid according to the detection result. The sweeping mechanism has an arm that sweeps along the outer periphery of the substrate while holding the nozzle. The sweeping mechanism also has a guide section for guiding the sweeping of the nozzle. The nozzle has: The upper movable nozzle can move within an arc-shaped first sweeping range along the upper outer periphery of the substrate; The movable nozzle on the left side can move within an arc-shaped second sweeping range along the outer periphery of the left side of the substrate; The movable nozzle on the right side can move within an arc-shaped third sweep range along the outer periphery of the right side of the substrate; as well as A fixed nozzle is fixed inside the treatment tank. The arm has: The first arm has its lower end connected to the upper movable nozzle, which is used to maintain the upper movable nozzle while moving it within the first sweeping range. The second arm, with its lower end connected to the movable nozzle on the left side, maintains the movable nozzle on the left side while allowing it to move within the second sweeping range; and The third arm, with its lower end connected to the right-side movable nozzle, allows the right-side movable nozzle to be moved within the third sweep range while maintaining its position. The guide portion has: A first guide part is disposed at the lower end of the first arm part to guide the movement of the upper movable nozzle; A second guide section, located at the lower end of the second arm, guides the movement of the movable nozzle on the left side; and The third guide section is located at the lower end of the third arm and guides the movement of the movable nozzle on the right side.

2. The substrate cleaning apparatus according to claim 1, wherein, The substrate cleaning apparatus further comprises: The spray nozzle sprays a second cleaning fluid into the holding section.

3. A substrate cleaning method, which is used in the substrate cleaning apparatus of claim 1, comprises the following steps: Multiple substrates are arranged and housed in a processing tank along the thickness direction of the substrates; While sweeping at least one nozzle extending along the thickness direction along the outer periphery of the substrate using a sweeping mechanism, cleaning fluid is sprayed from the nozzle onto the substrate.

4. The substrate cleaning method according to claim 3, wherein, The substrate is stored in an upright position by means of a holding part. The holding part has multiple slots spaced apart along the thickness direction, which can hold the substrate in an upright position. The sweeping along the outer periphery is performed through a first nozzle and a second nozzle. The first nozzle sweeps a first sweeping range on the upper side of the substrate, and the second nozzle sweeps a second sweeping range on the side side of the substrate. The substrate cleaning method further includes the following steps: The first nozzle is withdrawn upward from the treatment tank; After the first nozzle is withdrawn, the second nozzle continues to spray the cleaning fluid while the substrate is transported upward from the processing tank.

5. The substrate cleaning method according to claim 4, wherein, The substrate cleaning method further includes the following steps: After the substrate is removed, the second nozzle is withdrawn upward from the processing tank; After the second nozzle is withdrawn, a second cleaning fluid is sprayed from the spray nozzle into the holding part.

6. The substrate cleaning method according to claim 4, wherein, The sweeping along the outer periphery includes: after sweeping the first nozzle from the upper end to the lower end of the first sweeping range, sweeping the second nozzle from the upper end to the lower end of the second sweeping range.

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