Method for manufacturing a semiconductor structure and semiconductor structure

Abstract

The embodiment of the application belongs to the technical field of semiconductor manufacturing, and relates to a preparation method of a semiconductor structure and the semiconductor structure, which are used for improving the performance of the semiconductor structure. The preparation method of the semiconductor structure comprises the following steps: forming a bit line structure on a substrate, the bit line structure comprising a conductive layer, a transition layer and a cover layer which are sequentially stacked, the width of the transition layer being smaller than the width of the conductive layer; and forming an air gap on the top surface of the conductive layer and the side surface of the transition layer. The air gap can not only reduce the influence of the cover layer on the conductive layer to prevent the resistance of the conductive layer from increasing, but also can reduce the parasitic capacitance between the bit line structure and the peripheral structure thereof, so that the performance of the semiconductor structure is improved.

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