二极管标准单元电路结构及版图结构
By designing P-type and N-type diode structures with negative terminals connected, the leakage problem caused by the expansion of the back gate bias modulation range in the FDSOI process was solved, realizing the modulation of the transistor threshold voltage and the avoidance of leakage in the FDSOI process.
CN115101521BActive Publication Date: 2026-07-17SHANGHAI HUALI INTEGRATED CIRCUIT CORP
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHANGHAI HUALI INTEGRATED CIRCUIT CORP
- Filing Date
- 2022-06-02
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
In the FDSOI process, expanding the back gate bias modulation range may cause the potential of the P-well PW to rise, resulting in leakage current due to forward conduction of the PN junction.
Method used
Design a standard diode unit circuit structure, including a first type and a second type of diode connected to the negative terminal. The first type of P-type diode is reverse biased to cut off the second type of N-type diode to avoid leakage.
Benefits of technology
By applying a back-gate bias voltage to modulate the threshold voltage of the transistor, leakage current caused by the rise of the P-well PW potential is avoided, thus improving the reliability of the circuit.
✦ Generated by Eureka AI based on patent content.
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Figure CN115101521B_ABST
Abstract
本发明公开了一种二极管标准单元电路结构，包括：负极相连的第一类型二极管和第二类型二极管；第一类型二极管由第一类型注入层和第二类型阱组成，其正极是连接受天线效应影响的CMOS器件的栅极，其负极是连接第二类型二极管的负极；第二类型二极管由第二类型注入层与第一类型阱形成，其正极连接第一类型阱，其负极是连接第一类型二极管的负极。本发明中的第一类型二极管能起到对第二类型二极管反偏截至的作用，避免漏电的产生。
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Citation Information
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