Semiconductor device and semiconductor device package including the semiconductor device

Abstract

Embodiments relate to semiconductor devices, semiconductor device packages, and methods for manufacturing semiconductor devices. The semiconductor device includes: a light emitting structure, the light emitting structure includes a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer, the active layer being arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; the method includes: sequentially forming a light absorbing layer and the light emitting structure on a substrate; and separating the light absorbing layer at least partially from the first conductive semiconductor layer by irradiating the substrate with a laser. The present application can improve the crystallinity of the light emitting structure and reduce the lattice mismatch between the substrate and the light emitting structure by providing a light absorbing layer.

Description

[0001] This application is a divisional of an invention patent application with an international application date of June 23, 2017, an international application number of PCT / KR2017 / 006661, an application number of 201780039190.X entering the Chinese national phase, and an invention name of “Semiconductor device and semiconductor device package including a semiconductor device”.

[0002] CROSS-REFERENCE TO RELATED APPLICATIONS

[0003] This application claims the benefit of Korean Patent Application No. 10-2016-0079489 filed in Korea on Jun. 24, 2016 and Korean Patent Application No. 10-2016-0112146 filed in Korea on Aug. 31, 2016, which are hereby incorporated by reference in their entirety. Technical Field

[0004] Embodiments relate to a semiconductor device and a semiconductor device package including the semiconductor device. Background Art

[0005] Semiconductor devices including compounds such as GaN, AlGaN, etc. have many advantages such as wide and easily adjustable band gap energy, etc., and can be variously used as light emitting devices, light receiving devices, various diodes, and the like.

[0006] Specifically, due to the development of thin film growth technology and device materials, light-emitting devices such as light-emitting diodes or laser diodes using III-V or II-VI compound semiconductor materials can achieve various colors, such as red light, green light, blue light, ultraviolet light, etc., and achieve high-efficiency white light using phosphors or by combining colors, and have the advantages of low power consumption, semi-permanent life, fast response time, safety and environmental friendliness compared to traditional light sources such as fluorescent lamps and incandescent lamps.

[0007] In addition, when a light receiving device such as a photodetector or a solar cell is manufactured using a III-V or II-VI compound semiconductor material, the light receiving element absorbs light of various wavelength regions to generate photocurrent due to the development of the element material, so that light of various wavelength regions from gamma rays to radio wavelength regions can be used. In addition, by utilizing the advantages of fast response speed, safety, environmental friendliness, and easy control of device materials, the lamp device can also be easily used for power control, microwave circuits, or communication modules.

[0008] Therefore, the application of semiconductor devices has been extended to transmission modules of optical communication equipment, light emitting diode (LED) backlights replacing cold cathode fluorescent lamps (CCFL) configuring backlights of liquid crystal display (LCD) devices, white LED lighting devices capable of replacing fluorescent lamps or incandescent lamps, headlights of vehicles, traffic lights, sensors for detecting gas or fire, etc. In addition, the application of semiconductor devices can be extended to high-frequency application circuits, another power control device, and communication modules.

[0009] In particular, light emitting devices emitting light in the ultraviolet wavelength region can be used for hardening processes and, due to the bactericidal effect, for curing, medical and sterilization applications.

[0010] Recently, research on ultraviolet light emitting devices has been actively conducted, but there are problems in that it is difficult to realize a vertical type ultraviolet light emitting device and crystallinity is reduced in a process of separating a substrate.

[0011] In conventional semiconductor devices, due to lattice mismatch and differences in thermal expansion coefficients between semiconductor layers, strain can change in each semiconductor layer. Strain changes may cause dislocations or defects in the semiconductor layer. Dislocations or defects may cause V-pits or cracks, and the V-pits or cracks may generate leakage current. Summary of the invention

[0012] Technical issues

[0013] Example embodiments are directed to providing a vertical type ultraviolet semiconductor device.

[0014] Furthermore, exemplary embodiments are directed to providing a semiconductor device having high crystallinity.

[0015] Furthermore, exemplary embodiments are directed to providing semiconductor devices having improved optical power.

[0016] Furthermore, exemplary embodiments are directed to providing a semiconductor device capable of improving light extraction efficiency by enhancing back diffusion of a p-type dopant.

[0017] Problems to be solved in the embodiments are not limited to the above-mentioned problems, and also include purposes and effects that can be determined from solutions to the problems and embodiments described below.

[0018] Technical Solution

[0019] One aspect of the present invention provides a semiconductor device, which includes: a light emitting structure, which includes a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer and an intermediate layer, wherein the active layer is arranged between the first conductive semiconductor layer and the second conductive semiconductor layer, and the intermediate layer is arranged between the first conductive semiconductor layer and the active layer or arranged inside the first conductive semiconductor layer, wherein the first conductive semiconductor layer, the intermediate layer, the active layer and the second conductive semiconductor layer may include aluminum, and the intermediate layer may include a first intermediate layer having an aluminum component lower than the aluminum component of the first conductive semiconductor layer.

[0020] The intermediate layer may include a first intermediate layer and a second intermediate layer, the second intermediate layer having an aluminum composition higher than that of the first intermediate layer.

[0021] The aluminum composition of the second intermediate layer may be higher than that of the first conductive semiconductor layer.

[0022] A plurality of first intermediate layers and a plurality of second intermediate layers may be alternately stacked.

[0023] The thickness of the first intermediate layer may be greater than the thickness of the second intermediate layer.

[0024] A thickness ratio of the first intermediate layer to the second intermediate layer may be in the range of 2:1 to 6:1.

[0025] The total thickness of the intermediate layer may be in the range of 50 nm to 1000 nm.

[0026] The aluminum composition of the first intermediate layer may be in the range of 30% to 60%.

[0027] The aluminum composition of the second intermediate layer may be in the range of 60% to 100%.

[0028] The first conductive semiconductor layer may include a first-first conductive semiconductor layer and a first-second conductive semiconductor layer, and the intermediate layer may be disposed between the first-first conductive semiconductor layer and the first-second conductive semiconductor layer.

[0029] The first-second conductive semiconductor layer may be disposed closer to the active layer than the first-first conductive semiconductor layer.

[0030] The aluminum composition of the first-second conductive semiconductor layer may be lower than that of the first-first conductive semiconductor layer.

[0031] The thickness of the first-first conductive semiconductor layer may be greater than the thickness of the first-second conductive semiconductor layer.

[0032] The light emitting structure may include a plurality of grooves arranged directly to a certain region of the first-second conductive semiconductor layer by passing through the second conductive semiconductor layer and the active layer.

[0033] The semiconductor device may further include a first conductive layer disposed in each of the plurality of grooves and having a connection electrode electrically connected to the first-second conductive semiconductor layer.

[0034] The intermediate layer may be disposed between the first conductive semiconductor layer and the active layer.

[0035] The light emitting structure may include a plurality of grooves arranged up to a certain region of the first conductive semiconductor layer by passing through the second conductive semiconductor layer, the active layer, and the intermediate layer.

[0036] The semiconductor device may further include a first conductive layer disposed within each of the plurality of grooves and having a connection electrode electrically connected to the first conductive semiconductor layer.

[0037] Another aspect of the present invention provides a semiconductor device package, the semiconductor device package including a body and a semiconductor device arranged on the body, wherein the semiconductor device may include a light emitting structure, the light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer, and an intermediate layer arranged between the first conductive semiconductor layer and the active layer or arranged inside the first conductive semiconductor layer. The first conductive semiconductor layer, the intermediate layer, the active layer, and the second conductive semiconductor layer may include aluminum, and the intermediate layer may include a first intermediate layer having an aluminum component lower than that of the first conductive semiconductor layer.

[0038] Another aspect of the present invention provides a method for manufacturing a semiconductor device, which includes sequentially forming a light absorbing layer and the above-mentioned light emitting structure on a substrate; and separating the light absorbing layer from the first conductive semiconductor layer by irradiating the substrate with laser, wherein during the separation, the light absorbing layer and the intermediate layer can absorb the laser.

[0039] Beneficial Effects

[0040] According to the exemplary embodiments, a vertical type ultraviolet light emitting device can be manufactured.

[0041] Furthermore, the crystallinity of the ultraviolet light emitting device can be improved.

[0042] Furthermore, the optical power can be improved.

[0043] Furthermore, the propagation of dislocations is improved, so that the threading dislocation density (TDD) of the final semiconductor layer can be reduced to improve light emitting efficiency.

[0044] In addition, since the doping concentration of the second conductive type dopant of each of the second conductive semiconductor layer and the electron blocking layer (EBL) remains constant, light extraction efficiency may be improved by improving back diffusion of the p type dopant from the EBL to the active layer.

[0045] In addition, by improving dislocations or defects, degradation of electrical characteristics due to leakage current can be improved.

[0046] Furthermore, full transverse electric (TE) polarization of ultraviolet light-emitting devices can be achieved by resolving dislocations or defects.

[0047] Various advantageous features and effects of the present invention are not limited to the detailed description and should be easily understood through the description of the detailed embodiments of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0048] Figure 1 is a conceptual diagram of a light emitting structure according to an embodiment of the present invention.

[0049] Figure 2 is a conceptual diagram of a light emitting structure according to another embodiment of the present invention.

[0050] Figure 3 is a conceptual diagram of a semiconductor device according to an embodiment of the present invention.

[0051] Figure 4 is a conceptual diagram of a semiconductor device according to another embodiment of the present invention.

[0052] Figure 5a is a conceptual diagram of a semiconductor device according to still another embodiment of the present invention.

[0053] Figure 5b yes Figure 5a A modified embodiment of .

[0054] Figure 6a and 6b is a plan view of a semiconductor device according to an embodiment of the present invention.

[0055] Figure 7 is a conceptual diagram of a light emitting structure having a light absorbing layer and an intermediate layer formed therein.

[0056] Figure 8 This is a cross-sectional photograph of a light-absorbing layer having a block-like structure.

[0057] Fig. 9 This is a cross-sectional photograph of a light-absorbing layer having a superlattice structure.

[0058] Fig.10 is a diagram for describing a process of separating a substrate.

[0059] Fig.11 is a diagram for describing a process of etching a light emitting structure.

[0060] Fig.12 is a diagram illustrating a manufactured semiconductor device.

[0061] Fig.13 is a conceptual diagram of a semiconductor device package according to an embodiment of the present invention.

[0062] Fig.14 is a cross-sectional view illustrating a semiconductor device according to an embodiment.

[0063] Fig.15 It is a graphic Figure 1 A cross-sectional view of a region A of a semiconductor device.

[0064] Fig.16 is a graph showing dopant concentrations of the second-second conductive semiconductor layer and the second-third conductive semiconductor layer analyzed by secondary ion mass spectrometry (SIMS).

[0065] Fig.17 and 18 is a plot comparing the response surface methodology (RSM) data for Comparison Example and Example.

[0066] Fig.19 are photographs showing surfaces of second to third conductive semiconductor layers according to an embodiment.

[0067] Figure 20 to Figure 23 is a cross-sectional view illustrating a method of manufacturing a semiconductor device according to an embodiment.

[0068] Fig.24 is a cross-sectional view illustrating a light emitting device package according to an embodiment. DETAILED DESCRIPTION

[0069] The present embodiment may be modified in other forms, or various embodiments may be combined with each other, and thus the scope of the present disclosure is not limited to each embodiment described below.

[0070] Although an item described in a certain embodiment is not described in another embodiment, the item can be understood as being related to the other embodiment unless otherwise described in the other embodiment or as long as there is no contradictory description therein.

[0071] For example, when features of configuration A are described in a particular embodiment and features of configuration B are described in another embodiment, even when an embodiment in which configuration A and configuration B are combined is not explicitly described, it should be understood that they will fall within the scope of the present disclosure unless otherwise specified in other embodiments or as long as there is no contradictory interpretation therein.

[0072] In the description of the embodiments, when an element is described as being formed "on" or "under" another element, the term "on..." or "under..." includes the meaning that the two elements are in direct contact with each other and the meaning that one or more other components are arranged and formed (indirectly) between the two components. In addition, when described as "above (up) or below (below), or above or below", with respect to an element, the direction may include not only an upward direction but also a downward direction.

[0073] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, which are suitable for being implemented by those skilled in the art to which the present invention belongs.

[0074] The light emitting structure according to an exemplary embodiment of the present invention may output light in an ultraviolet (UV) wavelength range. For example, the light emitting structure may emit light in a near UV wavelength range (UV-A), light in a far UV wavelength range (UV-B), or light in a deep UV wavelength range (UV-C). The wavelength range may be determined by the aluminum (Al) component ratio of the light emitting structure 120.

[0075] For example, light in the near UV wavelength range (UV-A) may have a wavelength in the range of 320 nm to 420 nm, light in the far UV wavelength range (UV-B) may have a wavelength in the range of 280 nm to 320 nm, and light in the deep UV wavelength range (UV-C) may have a wavelength in the range of 100 nm to 280 nm.

[0076] Figure 1 is a conceptual diagram of a light emitting structure according to an embodiment of the present invention.

[0077] The light emitting structure 120A according to the present embodiment includes a first conductive semiconductor layer 124 , a second conductive semiconductor layer 127 , an active layer 126 , and an intermediate layer 125 disposed between the first conductive semiconductor layer 124 and the active layer 126 .

[0078] The first conductive semiconductor layer 124, the intermediate layer 125, the active layer 126, and the second conductive semiconductor layer 127 include Al. The Al composition may be controlled according to a desired UV wavelength range.

[0079] The first conductive semiconductor layer 124 may be formed of a III-IV or II-V compound semiconductor and may be doped with a first dopant. The first conductive semiconductor layer 124 may be formed of a semiconductor material having a composition formula of Inx1Aly1Ga1-x1-y1N (0≤x1≤1, 0≤y1≤1, and 0≤x1+y1≤1), for example, a semiconductor material selected from GaN, AlGaN, InGaN, InAlGaN, etc. In addition, the first dopant may be an n-type dopant, such as Si, Ge, Sn, Se, or Te. When the first dopant is an n-type dopant, the first conductive semiconductor layer 124 doped with the first dopant may be an n-type semiconductor layer.

[0080] The active layer 126 is disposed between the first conductive semiconductor layer 124 and the second conductive semiconductor layer 127. The active layer 126 is a layer where electrons (or holes) injected through the first conductive semiconductor layer 124 and holes (or electrons) injected through the second semiconductor layer 127 meet. In the active layer 126, the electrons and the holes may be converted into a low energy level due to recombination thereof, and the active layer 126 may emit light having a UV wavelength.

[0081] The active layer 126 may have any one of a single well structure, a multi-well structure, a single quantum well structure, a multi-quantum well (MQW) structure, a quantum dot structure, or a quantum wire structure, but the structure of the active layer 126 is not limited thereto.

[0082] The intermediate layer 125 may be disposed between the first conductive semiconductor layer 124 and the active layer 126. The intermediate layer 125 includes a first intermediate layer 125a having a lower Al composition than the first conductive semiconductor layer 124, and a second intermediate layer 125b having a higher Al composition than the first conductive semiconductor layer 124. A plurality of first intermediate layers 125a and a plurality of second intermediate layers 125b may be alternately disposed.

[0083] The Al composition of the first intermediate layer 125a may be lower than that of the first conductive semiconductor layer 124. During a laser lift-off (LLO) process, the first intermediate layer 125a may absorb light irradiated onto the light emitting structure 120 for preventing damage to the active layer 126. Therefore, the semiconductor device according to the present embodiment may reduce damage to the active layer, thereby improving optical power, electrical characteristics, and reliability.

[0084] The thickness and Al composition of the first intermediate layer 125a may be appropriately adjusted to absorb the laser irradiated onto the light emitting structure 120 during the LLO process. The Al composition of the first intermediate layer 125a may be in the range of 30% to 60%, and the thickness thereof may be in the range of 1nm to 10nm. For example, the first intermediate layer 125a may be formed of AlGaN, but the present invention is not particularly limited thereto.

[0085] The Al composition of the second intermediate layer 125b may be higher than the Al composition of the first conductive semiconductor layer 124. The second intermediate layer 125b increases the Al composition reduced by the first intermediate layer 125a, so that the propagation direction of the lattice defect transmitted from the lower part of the intermediate layer 125 can be changed at the interface between the first intermediate layer 125a and the second intermediate layer 125b. A plurality of lattice defects may merge with each other at the interface, so that the lattice defects propagating above the intermediate layer 125 may be reduced. Therefore, the lattice defects of the epitaxial layer grown on the intermediate layer 125 may be reduced, and the crystallinity may be improved. In addition, due to the refractive index difference caused by the Al content difference with the first conductive semiconductor layer 124, the light extraction efficiency may be improved.

[0086] For example, the Al composition of the second intermediate layer 125b may be in the range of 60% to 100%, and the thickness thereof may be in the range of 0.1 nm to 2.0 nm. The second intermediate layer 125b may be made of AlGaN or AlN, but the present invention is not particularly limited thereto.

[0087] For example, in order to absorb laser light having a wavelength of 246 nm, the thickness of the first intermediate layer 125a may be greater than that of the second intermediate layer 125b. The thickness of the first intermediate layer 125a may be in the range of 1.0 nm to 10.0 nm, and the thickness of the second intermediate layer 125b may be in the range of 0.5 nm to 2.0 nm.

[0088] The thickness ratio of the first intermediate layer 125a to the second intermediate layer 125b (first intermediate layer: second intermediate layer) may be in the range of 2: 1 to 6: 1. When the thickness ratio is greater than 2: 1, the thickness of the first intermediate layer capable of sufficiently absorbing laser light can be ensured, and when the thickness ratio is less than 6: 1, the thickness of the second intermediate layer can be ensured to control the Al composition of the first and second intermediate layers.

[0089] When the thickness ratio is less than 2:1, the first intermediate layer 125a becomes thin and has difficulty in sufficiently absorbing laser light, whereas when the thickness ratio is greater than 6:1, the second intermediate layer 125b becomes too thin so that the Al composition of the first and second intermediate layers becomes lower.

[0090] The total thickness of the intermediate layer 125 may be in the range of 50 nm to less than 1000 nm. When such a range is satisfied, crystallinity can be maintained when laser light is fully absorbed. When the total thickness is less than 50 nm, the thickness of the first intermediate layer 125 a becomes thinner, and thus it is difficult to fully absorb 246 nm laser light, whereas when the total thickness is greater than 1000 nm, the Al component of the intermediate layer becomes lower, and thus crystallinity decreases.

[0091] The second conductive semiconductor layer 127 may be formed on the active layer 126, may be formed of a III-V group or II-VI group compound semiconductor, and may be doped with a second dopant. The second conductive semiconductor layer 127 may be formed of a material having a composition formula of Inx5Aly2Ga1-x5-y2N (0≤x5≤1, 0≤y2≤1, and 0≤x5+y2≤1), or may be formed of a material selected from AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. When the second dopant is a p-type dopant such as Mg, Zn, Ca, Sr, or Ba, the second conductive semiconductor layer 127 doped with the second dopant may be a p-type semiconductor layer.

[0092] When the second conductive semiconductor layer 127 is made of AlGaN, hole injection may not be smooth due to the low conductivity of AlGaN. Therefore, GaN having relatively high conductivity and the same polarity as that of the second conductive semiconductor layer 126 may be disposed on the lower surface of the second conductive semiconductor layer 127. However, the present invention is not particularly limited thereto, and the Al composition of the second conductive semiconductor layer 127 may be reduced to a range of 1% to 10%, so that an ohmic contact may be formed between the second electrode and the second conductive semiconductor layer 127.

[0093] Figure 2 is a conceptual diagram of a light emitting structure according to another embodiment of the present invention.

[0094] The light emitting structure 120B according to the present embodiment includes first conductive semiconductor layers 124a and 124b, a second conductive semiconductor layer 127, an active layer 126 disposed between the first conductive semiconductor layers 124a and 124b and the second conductive semiconductor layer 127, and an intermediate layer 125 disposed between the first conductive semiconductor layers 124a and 124b.

[0095] The first conductive semiconductor layers 124a and 124b include a first-first conductive semiconductor layer 124a and a first-second conductive semiconductor layer 124b, and the intermediate layer 125 may be disposed between the first-first conductive semiconductor layer 124a and the first-second conductive semiconductor layer 124b.

[0096] The first-second conductive semiconductor layer 124b may be disposed closer to the active layer 126 than the first-first conductive semiconductor layer 124a. The Al composition of the first-second conductive semiconductor layer 124b may be lower than that of the first-first conductive semiconductor layer 124a. The Al composition of the first-second conductive semiconductor layer 124b may be in the range of 40% to 70%, and the Al composition of the first-first conductive semiconductor layer 124a may be in the range of 50% to 80%.

[0097] The thickness of the first-second conductive semiconductor layer 124b may be thinner than that of the first-first conductive semiconductor layer 124a. The first-first conductive semiconductor layer 124a may have a thickness of 130% or more relative to the thickness of the first-second conductive semiconductor layer 124b. According to this structure, since the intermediate layer 125 is formed after the first-first conductive semiconductor layer 124a having a high Al composition is fully grown, the overall crystallinity of the light emitting structure 120 may be improved.

[0098] Figure 1 The configuration described in can be directly applied to the configuration (Al composition, thickness, etc.) of the intermediate layer 125. The intermediate layer 125 can be doped with the first dopant as needed.

[0099] Figure 3 is a conceptual diagram of a semiconductor device according to an embodiment of the present invention, and Figure 4 is a conceptual diagram of a semiconductor device according to another embodiment of the present invention.

[0100] Figure 1 The structure described in can be directly applied to the structure of the light emitting structure 120A. Figure 3 , the groove 128 may be arranged up to a certain region of the intermediate layer 125 by passing through the second conductive semiconductor layer 127 and the active layer 126 .

[0101] The first electrode 142 may contact the intermediate layer 125 to be electrically connected to the first conductive semiconductor layer 124. The intermediate layer 125 has an Al composition lower than that of the first conductive semiconductor layer 124, so that the intermediate layer 125 may be advantageous in distributing current. However, the present invention is not particularly limited thereto, and the groove 128 may be provided in a certain region of the first conductive semiconductor layer 124 by passing through the intermediate layer 125.

[0102] The intermediate layer 125 may be doped with an n-type dopant. Therefore, the intermediate layer 125 may be defined as first to third conductive semiconductor layers having a low Al composition in the first conductive semiconductor layer 124.

[0103] The first conductive layer 165 includes a connection electrode 167 disposed in the groove 128 and electrically connected to the first conductive semiconductor layer 124. The first electrode 142 may be disposed between the connection electrode 167 and the first conductive semiconductor layer 124. The first electrode 142 may be an ohmic electrode.

[0104] The first groove 128 may be arranged such that the distance from the upper surface of the groove 128 to the upper surface of the light emitting structure becomes a value within a range of 1 μm to 4 μm. When the distance from the upper surface of the light emitting structure to the upper surface of the groove 128 is less than 1 μm, the reliability of the light emitting device may be reduced, whereas when the distance from the upper surface of the light emitting structure to the upper surface of the groove 128 exceeds 4 μm, the light extraction efficiency may be reduced due to crystal defects in the light emitting structure, etc.

[0105] The second conductive layer 150 may be disposed on the lower surface of the second conductive semiconductor layer 127 and electrically connected thereto. The second conductive layer 150 may be disposed in a region between the plurality of connection electrodes 167. One region of the second conductive layer 150 may be exposed to be electrically connected to the electrode pad. Although not shown in the drawings, a second electrode (ohmic electrode) may be disposed between the second conductive layer 150 and the second conductive semiconductor layer 127.

[0106] Each of the first conductive layer 165 and the second conductive layer 150 may be formed of a transparent conductive oxide (TCO) film. The TCO film may be formed of a material selected from indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), aluminum gallium zinc oxide (AGZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), antimony tin oxide (ATO), GZO, IZO nitride (IZON), ZnO, IrOx, RuOx, NiO, etc.

[0107] The first conductive layer 165 and the second conductive layer 150 may include an opaque metal such as Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, etc. In addition, the first conductive layer 165 may be configured with one or more layers made of a mixture of a TCO film and an opaque metal, but the present invention is not limited thereto.

[0108] The insulating layer 130 may be formed of at least one selected from SiO2, SixOy, Si3N, SixNy, SiOxNy, Al2O3, TiO2, AlN, etc., but the present invention is not limited thereto. The insulating layer 130 may electrically insulate the connection electrode 167 from the active layer 126 and the second conductive semiconductor layer 127.

[0109] Figure 4 is a conceptual diagram of a semiconductor device according to another embodiment of the present invention.

[0110] Figure 2 The structure described in can be directly applied to the structure of the light emitting structure 120B. Figure 4The first conductive semiconductor layer 124 may include a first-first conductive semiconductor layer 124a and a first-second conductive semiconductor layer 124b, and an intermediate layer 125, and may be disposed between the first-first conductive semiconductor layer 124a and the first-second conductive semiconductor layer 124b.

[0111] The groove 128 may be disposed up to a certain region of the intermediate layer 125 by passing through the second conductive semiconductor layer 127, the active layer 126, and the first-second conductive semiconductor layer 124b. The intermediate layer 125 has a lower Al composition than the first conductive semiconductor layer 124, so that the intermediate layer 125 is conducive to distributing current.

[0112] However, the present invention is not particularly limited thereto, and the groove 128 may be disposed in a certain region of the first-second conductive semiconductor layer 124b.

[0113] In this case, the first-second conductive semiconductor layer 124b may be disposed closer to the active layer 126 than the first-first conductive semiconductor layer 124a, and the Al composition and thickness of the first-second conductive semiconductor layer 124b may be smaller than those of the first-first conductive semiconductor layer 124a.

[0114] The thickness of the second intermediate layer 125b may be in the range of 500nm to 1000nm. The thickness of the first intermediate layer 125a may be in the range of 600nm to 1500nm. The thickness of the first intermediate layer 125a may vary according to the depth of the irregular pattern.

[0115] The light emitting structure 120 may include a plurality of grooves 128 arranged in some regions of the first-second conductive semiconductor layer 124 b by passing through the second conductive semiconductor layer 127 and the active layer 126 .

[0116] The first conductive layer 165 may include a connection electrode 167 disposed inside each of the plurality of grooves 128 and electrically connected to the first-second conductive semiconductor layer 124b, and a first electrode 142 disposed between the first-second conductive semiconductor layer 124b and the connection electrode 167. The first-second conductive semiconductor layer 124b has a relatively low Al content, so that the first-second conductive semiconductor layer 124b can be advantageous for injecting and distributing current. However, the present invention is not particularly limited thereto, and the first-first conductive semiconductor layer 124a and the first-second conductive semiconductor layer 124b may have the same Al composition, and the groove 128 may be formed up to a certain region of the first-first conductive semiconductor layer 124a.

[0117] Figure 5a is a conceptual diagram of a semiconductor device according to still another embodiment of the present invention, and Figure 5b yes Figure 5a A modified embodiment of .

[0118] Figure 1 The configuration of the light emitting structure 120 described in the above can be directly applied to Figure 5a The groove 128 may be disposed up to a certain area of ​​the intermediate layer 125 by passing through the second conductive semiconductor layer 127 and the active layer 126. However, the present invention is not particularly limited thereto, and the groove 128 may be disposed in a certain area of ​​the light emitting structure 120A by passing through the intermediate layer 125.

[0119] refer to Figure 5b , the groove 128 may be arranged up to a certain region of the intermediate layer 125 by passing through the second conductive semiconductor layer 127 , the active layer 126 , and the first-second conductive semiconductor layer 124 b .

[0120] The intermediate layer 125 has a lower Al composition than the first conductive semiconductor layer 124, so that the intermediate layer 125 is conducive to distributing current. The intermediate layer 125 may be doped with an n-type dopant. However, the present invention is not particularly limited thereto, and the groove 128 may be arranged in a certain area of ​​the first-second conductive semiconductor layer 124b.

[0121] The first electrode 142 may be disposed on an upper surface of the groove 128 to be electrically connected to the first conductive semiconductor layer 124. The second electrode 246 may be disposed at a lower portion of the second conductive semiconductor layer 127.

[0122] The first electrode 142 and the second electrode 246 may be ohmic electrodes. The first electrode 142 and the second electrode 246 may be formed of at least one of ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, GZO, IZO nitride (IZON), Al-Ga ZnO (AGZO), In-GaZnO (IGZO), ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, Ni / IrOx / Au / ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Mg, Zn, Pt, Au, and Hf, but the present invention is not limited to these materials.

[0123] The second electrode pad 166 may be arranged at the edge of one side of the semiconductor device. The central portion of the second electrode pad 166 is pressed so that the upper surface of the second electrode pad 166 may have a concave portion and a convex portion. A wire (not shown) may be bonded to the concave portion of the upper surface. Therefore, the bonding area may be widened so that the second electrode pad 166 and the wire may be more firmly bonded.

[0124] The second electrode pad 166 may serve to reflect light, so that when the second electrode pad 166 is arranged close to the light emitting structure 120 , light extraction efficiency may be improved.

[0125] The height of the convex portion of the second electrode pad 166 may be higher than that of the active layer 126. Therefore, the second electrode pad 166 may reflect light emitted from the active layer 126 in the horizontal direction of the device upward, thereby improving light extraction efficiency and controlling light directivity.

[0126] The first insulating layer 131 is partially opened at the lower portion of the second electrode pad 166 so that the second conductive layer 150 and the second electrode 246 can be electrically connected. The passivation layer 180 may be formed on the upper surface and the side surface of the light emitting structure 120. The passivation layer 180 may be a region adjacent to the second electrode 246, but may contact the first insulating layer 131 below the second electrode 246.

[0127] For example, the first insulating layer 131 is opened and thus the width d22 of the portion where the second electrode 246 contacts the second conductive layer 150 may be in the range of 40 μm to 90 μm. When the width d22 is less than 40 μm, the operating voltage may rise, and when the width d22 is greater than 90 μm, it may be difficult to ensure a process margin that does not expose the second conductive layer 150 to the outside. When the second conductive layer 150 is exposed to the outer region of the second electrode 246, the reliability of the light emitting device may be reduced. Therefore, the width d22 may preferably fall within the range of 60% to 95% relative to the total width of the second electrode pad 166.

[0128] The first insulating layer 131 may electrically insulate the first electrode 142 from the active layer 126 and the second conductive semiconductor layer 127. In addition, the first insulating layer 131 may electrically insulate the second electrode 246 and the second conductive layer 150 from the first conductive layer 165.

[0129] The insulating layer 131 may be formed of at least one selected from SiO2, SixOy, Si3N4, SixNy, SiOxNy, Al2O3, TiO2, AlN, etc., but the present invention is not limited thereto. The first insulating layer 131 may be formed with a single layer or multiple layers. For example, the first insulating layer 131 may be a distributed Bragg reflector (DBR) having a multilayer structure including AlSi oxide or Ti compound. However, the present invention is not limited thereto, and the first insulating layer 131 may include various reflective structures.

[0130] When the first insulating layer 131 performs an insulating function, light emitted from the active layer 126 toward its side surface may be reflected upward to improve light extraction efficiency. As described below, in a UV semiconductor device, as the number of grooves 128 increases, light extraction efficiency may be more effective.

[0131] The second conductive layer 150 may cover the second electrode 246. Therefore, the second electrode pad 166, the second conductive layer 150, and the second electrode 246 may form one electrical path.

[0132] The second conductive layer 150 may completely surround the second electrode 246 to contact the side surface and the upper surface of the first insulating layer 131. The second conductive layer 150 may be formed of a material having high adhesive strength to the first insulating layer 131, of at least one material selected from the group consisting of Cr, Al, Ti, Ni, Au, etc., and alloys thereof, and formed of a single layer or a plurality of layers.

[0133] When the second conductive layer 150 contacts the side and upper surfaces of the first insulating layer 131, thermal and electrical reliability of the second electrode 246 may be improved. In addition, the second conductive layer 150 may have a function of reflecting light emitted between the first insulating layer 131 and the second electrode 246 upward.

[0134] The second conductive layer 150 may be disposed within a second separation distance corresponding to a region where the second conductive semiconductor layer is exposed between the first insulating layer 131 and the second electrode 246. The second conductive layer 150 may contact side and upper surfaces of the second electrode 246 and side and upper surfaces of the first insulating layer 131 within the second separation distance.

[0135] In addition, a region where the second conductive layer 150 contacts the second conductive semiconductor layer 127 may be arranged within the second separation distance to form a Schottky junction, so that current may be easily distributed.

[0136] The second insulating layer 132 electrically insulates the second electrode 246 and the second conductive layer 150 from the first conductive layer 165. The first conductive layer 165 may be electrically connected to the first electrode 142 by passing through the second insulating layer 132.

[0137] The first conductive layer 165 and the bonding layer 160 may be arranged along the lower surface of the light emitting structure 120 and the topography of the groove 128. The first conductive layer 165 may be formed of a material having a high reflectivity. For example, the first conductive layer 165 may include Al. When the first conductive layer 165 includes Al, the first conductive layer 165 serves to reflect light emitted from the active layer 126 upward, thereby improving light extraction efficiency.

[0138] The bonding layer 160 may include a conductive material. For example, the bonding layer 160 may include a material selected from the group consisting of gold (Au), Sn, In, Al, Si, Ag, Ni, and copper (Cu), or an alloy thereof.

[0139] The substrate 170 may be formed of a conductive material. For example, the substrate 170 may include a metal or a semiconductor material. The substrate 170 may be a metal having high electrical conductivity and / or high thermal conductivity. In this case, the heat generated when the semiconductor device is operating can be quickly discharged to the outside.

[0140] The substrate 170 may include a material selected from the group consisting of Si, molybdenum (Mo), Si, tungsten (W), Cu, and Al, or alloys thereof.

[0141] Irregularities may be formed on the upper surface of the light emitting structure 120. The irregularities may improve the extraction efficiency of light emitted from the light emitting structure 120. The irregularities may have different average heights according to UV wavelengths, and, in the case of UV-C, when the height of each of the irregularities is within a range of 300 nm to 800 nm and the average height thereof is within a range of 500 nm to 600 nm, the light extraction efficiency may be improved.

[0142] Figure 6a and 6b is a plan view of a semiconductor device according to an embodiment of the present invention.

[0143] When the Al composition of the light emitting structure 120 increases, the current diffusion characteristics inside the light emitting structure 120 may be deteriorated. In addition, the active layer 126 increases the amount of light emitted to its side surface (i.e., transverse magnetic (TM) mode) compared to GaN-based blue light emitting devices. The TM mode can be generated in UV semiconductor devices.

[0144] According to the present embodiment, a relatively large number of grooves 128 may be formed in a GaN semiconductor emitting light in a UV wavelength region for current diffusion when compared to a GaN semiconductor emitting blue light, and a first electrode 142 may be disposed at each of the large number of grooves 128 .

[0145] refer to Figure 6a , when the Al component increases, the current distribution characteristics may decrease. Therefore, the current is distributed only to the position adjacent to each first electrode 142, so that the current density can be sharply reduced at the position away from each first electrode 142. Therefore, the effective light-emitting area P2 may become narrower. The effective light-emitting area P2 can be defined as a boundary position having a current density of 40% or less relative to the position P1 near the first electrode having the highest current density. For example, the effective light-emitting area P2 can be adjusted according to the level of the injected current and the Al component in the area within 40μm from the center of the groove 128.

[0146] Specifically, the low current density region P3 between adjacent first electrodes 142 has low current density and thus hardly contributes to light emission. Therefore, in the present embodiment, the first electrodes 142 are more arranged in the low current density region P3 having low current density, so that optical power can be improved.

[0147] Generally, because the GaN semiconductor layer has a relatively high current diffusion characteristic, the area of ​​the groove 128 and the first electrode 142 can be preferably minimized. This is because as the area of ​​the groove 128 and the first electrode 142 becomes larger, the area of ​​the active layer 126 becomes smaller. However, in the present embodiment, because the high current diffusion characteristic due to the Al component is relatively low, it is preferred that even if the area of ​​the active region 126 is increased, the low current density region P3 can be reduced by increasing the number of first electrodes 142.

[0148] refer to Figure 6b , when the number of grooves 128 is 48, the grooves 128 may not be arranged linearly in the horizontal and vertical directions, and may be arranged in a zigzag manner. In this case, the area of ​​the low current density region P3 is narrowed, so that most of the active layer can participate in light emission. When the number of grooves 128 is in the range of 70 to 110, the current can be distributed more efficiently, so that the operating voltage can be further reduced and the optical power can be improved. In a semiconductor device that emits UV-C light, when the number of grooves 128 is less than 70, the electrical and optical characteristics may deteriorate, however when the number of grooves 128 is greater than 110, the electrical characteristics may be improved, but the volume of the light-emitting layer is reduced, so that the optical characteristics may be reduced.

[0149] The first area in which the plurality of first electrodes 142 are in contact with the first conductive semiconductor layer 122 may be in the range of 7.4% to 20% of the maximum cross-sectional area of ​​the light emitting structure 120 in the horizontal direction or in the range of 10% to 20%. The first area may be the sum of the areas in which the first electrodes 142 are in contact with the first conductive semiconductor layer 122.

[0150] When the first area of ​​the plurality of first electrodes 142 is less than 7.4%, the optical power is reduced due to insufficient current diffusion characteristics, but when the first area exceeds 20%, the areas of the active layer and the second electrode are excessively reduced, causing the operating voltage to increase and the optical power to decrease.

[0151] In addition, the total area of ​​the plurality of grooves 128 may be in the range of 13% to 30% relative to the maximum cross-sectional area of ​​the light emitting structure 120 in the horizontal direction. When the total area of ​​the plurality of grooves 128 does not meet the above conditions, it is difficult to control the total area of ​​the first electrode 142 in the range of 7.4% to 20%. In addition, there are problems of increased operating voltage and reduced optical power.

[0152] A second area where the second electrode 246 contacts the second conductive semiconductor layer 126 may be in the range of 35% to 70% of the maximum cross-sectional area in the horizontal direction of the light emitting structure 120. The second area may be a total area where the second electrode 246 contacts the second conductive semiconductor layer 126.

[0153] When the second area is less than 35%, the area of ​​the second electrode becomes too small, thereby causing problems of increased operating voltage and reduced hole injection efficiency. When the second area exceeds 70%, the first area cannot be effectively widened, thereby causing problems of reduced electron injection efficiency.

[0154] The first area and the second area have an inverse relationship. That is, when the number of grooves is increased so as to increase the number of first electrodes, the area of ​​the second electrode is reduced. In order to increase the optical power, the distribution characteristics of electrons and holes should be balanced. Therefore, it is important to appropriately determine the ratio of the first area to the second area.

[0155] An area ratio of a first area where the plurality of first electrodes contact the first conductive semiconductor layer to a second area where the plurality of second electrodes contact the second conductive semiconductor layer (first area:second area) may be in the range of 1:3 to 1:10.

[0156] When the area ratio is greater than 1:10, the first area is relatively small, so that the current distribution characteristics may be reduced. In addition, when the area ratio is less than 1:3, there is a problem that the second area becomes relatively small.

[0157] Figure 7 is a conceptual diagram of a light emitting structure having a light absorbing layer and an intermediate layer formed therein, Figure 8 This is a cross-sectional photograph of a light-absorbing layer with a blocky structure. Fig. 9 This is a cross-sectional photograph of a light-absorbing layer with a superlattice structure. Fig.10 is a diagram for describing a process of separating a substrate, Fig.11 is a diagram for describing a process of etching a light emitting structure, and Fig.12 is a diagram illustrating a manufactured semiconductor device.

[0158] refer to Figure 7 , a buffer layer 122 , a light absorbing layer 123 , a first-first conductive semiconductor layer 124 a , an intermediate layer 125 , a first-second conductive semiconductor layer 124 b , an active layer 126 , and a second conductive semiconductor layer 127 may be sequentially formed on the growth substrate 121 .

[0159] The light absorbing layer 123 includes a first light absorbing layer 123a having a low Al composition and a second light absorbing layer 123b having a high Al composition. A plurality of first light absorbing layers 123a and a plurality of second light absorbing layers 123b may be alternately arranged.

[0160] The Al composition of the first light absorbing layer 123a may be lower than that of the first conductive semiconductor layer 124. The first light absorbing layer 123a may function as a separator by absorbing laser light during the LLO process. Thus, the growth substrate may be removed.

[0161] The thickness and Al composition of the first light absorbing layer 123a may be appropriately adjusted to absorb laser light having a wavelength of 246 nm. The Al composition of the first light absorbing layer 123a may be in the range of 20% to 60%, and the thickness thereof may be in the range of 1 nm to 10 nm. For example, the first intermediate layer 125a may be formed of AlGaN, but the present invention is not particularly limited thereto. However, the present invention is not limited thereto, and the Al composition and thickness may be appropriately adjusted to absorb laser light.

[0162] The Al composition of the second light absorbing layer 123 b may be higher than that of the light emitting structure 120 A. The second light absorbing layer 123 b may increase the Al composition reduced by the first light absorbing layer 123 a , thereby improving the crystallinity of the first conductive semiconductor layer 124 grown on the light absorbing layer 123 .

[0163] For example, the Al composition of the second light absorbing layer 123b may be in the range of 60% to 100%, and the thickness thereof may be in the range of 0.1 nm to 2.0 nm. The second light absorbing layer 123b may be made of AlGaN or AlN.

[0164] In order to absorb laser light having a wavelength of 246 nm, the thickness of the first light absorbing layer 123a may be greater than that of the second light absorbing layer 123b. The thickness of the first light absorbing layer 123a may be in the range of 1 nm to 10 nm, and the thickness of the second light absorbing layer 123b may be in the range of 0.5 nm to 2.0 nm.

[0165] The thickness ratio of the first light absorbing layer 123a to the second light absorbing layer 123b may be in the range of 2: 1 to 6: 1. When the thickness ratio is less than 2: 1, the first light absorbing layer 123a becomes thinner and thus has difficulty in sufficiently absorbing laser light, and when the thickness ratio is greater than 6: 1, the second light absorbing layer 123b becomes too thin, so that the total Al composition of the light absorbing layer becomes low.

[0166] The total thickness of the light absorbing layer 123 may be in the range of 100 nm to 400 nm. When the total thickness is less than 100 nm, the thickness of the first light absorbing layer 123a becomes thinner, and thus it is difficult to fully absorb the laser light having a wavelength of 246 nm, and when the total thickness is greater than 400 nm, the total Al component becomes lower, so that the crystallinity is reduced.

[0167] According to the present embodiment, the crystallinity can be improved by forming the light absorbing layer 123 of the superlattice structure. With such a configuration, the light absorbing layer 123 can be used as a buffer layer for alleviating the lattice mismatch between the growth substrate 121 and the light emitting structure 120. Figure 8 , you can see the transfer to Fig. 9 Crystal defects (black spots) on the surface of the light absorbing layer 123 are relatively reduced so that the crystallinity is more excellent.

[0168] The intermediate layer 125 may be disposed between the first conductive semiconductor layer 124 and the active layer 126 or within the first conductive semiconductor layer 124. The intermediate layer 125 includes a first intermediate layer 125a having a lower Al composition than the first conductive semiconductor layer 124, and a second intermediate layer 125b having a higher Al composition than the first conductive semiconductor layer 124.

[0169] The Al composition of the first intermediate layer 125a may be lower than that of the first conductive semiconductor layer 124. During the LLO process, the first intermediate layer 125a may absorb laser light irradiated onto the semiconductor layer disposed on the light absorbing layer 123 by transmitting the light absorbing layer 123, thereby serving to prevent damage to the active layer 126. Therefore, optical power and electrical characteristics may be improved. Figure 2 The structure described in can be directly applied to the configuration of the intermediate layer 125 .

[0170] refer to Fig.10 , removing the growth substrate 121 may include irradiating laser L1 from the growth substrate 121 side to separate the growth substrate 121. The laser L1 may have a wavelength range that can be absorbed by the first light absorption layer 123a. For example, the laser may be a KrF laser with a wavelength range of 248nm, but the present invention is not particularly limited thereto.

[0171] The growth substrate 121 and the second light absorbing layer 123b have a large energy band gap so that the laser light L1 is not absorbed. However, the first light absorbing layer 123a having a low Al composition may be decomposed by absorbing the laser light L1. Therefore, the first light absorbing layer 123a may be separated from the growth substrate 121.

[0172] In this case, when a portion of the laser light is incident into the active layer 126 by passing through the light absorbing layer 123, damage occurs at the light emitting structure 120, so that the optical power may be reduced. Therefore, according to the present embodiment, the intermediate layer 125 may be arranged between the first conductive semiconductor layer 124 and the active layer 126 to absorb the laser light that transmits the light absorbing layer 123.

[0173] In this case, most of the laser light is absorbed by the light absorbing layer, so that there is not enough energy to separate the intermediate layer 125. Therefore, even if the intermediate layer 125 absorbs the laser light, the intermediate layer 125 may not be separated. In addition, the thickness of the light absorbing layer 123 or the optical power of the laser light may be adjusted so that the absorption of the laser light and the separation of the intermediate layer 125 are prevented.

[0174] Thereafter, the light absorbing layer 123 - 2 remaining on the first conductive semiconductor layer 124 a may be removed by leveling.

[0175] refer to Fig.11 , the second conductive layer 150 may be formed on the second conductive semiconductor layer 127, and then a plurality of grooves 128 may be formed to pass through a portion of the first conductive semiconductor layer 124 of the light emitting structure 120. Then, the insulating layer 130 may be formed on the side surfaces of the grooves 128 and on the second conductive semiconductor layer 127. Thereafter, the first electrode 142 may be formed in the first conductive semiconductor layer 124b exposed by the grooves 128.

[0176] refer to Fig.12 , the first conductive layer 165 may be formed under the insulating layer 130. The first conductive layer 165 may be electrically insulated from the second conductive layer 150 by the insulating layer 130.

[0177] Then, a conductive substrate 170 is formed under the first conductive layer 165 , and a second electrode pad 166 may be formed on the second conductive layer 150 exposed by the mesa etching.

[0178] The semiconductor device may be configured in a package and may be used to cure resin, resist, superoxide dismutase (SOD) or spin-on glass (SOG). Alternatively, the semiconductor device may be used for therapeutic medical care or for sterilizing air purifiers, water purifiers, and the like.

[0179] refer to Fig.13 , a semiconductor device package may include: a body 2 having a groove 2 a formed therein; a semiconductor device 1 disposed in the body 2 ; and a pair of lead frames 3 and 4 disposed in the body 2 and electrically connected to the semiconductor device 1 .

[0180] The body 2 may include a material or coating that reflects UV light. In addition, the molding member 5 covering the semiconductor device 1 may include a material that allows UV light to be transmitted.

[0181] Fig.14 is a cross-sectional view illustrating a semiconductor device according to an embodiment, Fig.15 It is a graphic Figure 1 A cross-sectional view of a region A of a semiconductor device, Fig.16is a graph showing dopant concentrations of the second-second conductive semiconductor layer and the second-third conductive semiconductor layer analyzed by secondary ion mass spectrometry (SIMS), and Fig.17 and 18 is a plot comparing the response surface methodology (RSM) data for Comparison Example and Example.

[0182] like Fig.14 and Fig.15 As shown in , the semiconductor device of the present embodiment can improve crystallinity by improving dislocation of the semiconductor layer. The semiconductor device of the present embodiment improves dislocation due to the difference in lattice constants between semiconductor layers, thereby maintaining dopant concentration completely and uniformly, thereby improving luminous efficiency. To this end, the semiconductor device of the present embodiment may include a light emitting structure 210 for improving dislocation.

[0183] An example of the UV light emitting device 200 according to the present embodiment will be described, in which the UV light has a wavelength within a range of 200 nm to 400 nm.

[0184] The light emitting device 200 may include a substrate 201 , a light emitting structure 210 , and first and second electrodes 251 and 253 .

[0185] The light emitting structure 210 includes an AlN template 211, a first conductive semiconductor layer 212, an active layer 214, an electron blocking layer (EBL) 230, a second-first conductive semiconductor layer 216a, a second-second conductive semiconductor layer 218a, and second to third conductive semiconductor layers 218b. In this case, the second-first conductive semiconductor layer may be referred to as a second conductive type first semiconductor layer, the second-second conductive semiconductor layer may be referred to as a second conductive type second semiconductor layer, and the second-third conductive semiconductor layer may be referred to as a second conductive type third semiconductor layer.

[0186] The substrate 201 may be formed of a material having high thermal conductivity, and may be a conductive substrate or an insulating substrate. For example, the substrate 201 may be formed of at least one of sapphire (Al2O3), SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge, and Ga2O3. An irregular structure may be formed on the substrate 201, but the present invention is not limited thereto.

[0187] The AlN template 211 may be formed on the substrate 201. The AlN template 211 may include a buffer function. The AlN template 211 may alleviate the lattice mismatch between the substrate 201 and the material of the light emitting structure 210 formed on the AlN template 211, and the AlN template 211 may be formed of a III-V group or a II-VI group compound semiconductor, for example, GaN, InN, InGaN, AlGaN, InAlGaN, and AlInN other than AlN.

[0188] An AlN template 211 can be grown on a substrate 201 to solve defects caused by lattice constant differences between subsequently grown AlGaN-based semiconductor layers. The AlN template 211 can have a fully strained epitaxial structure, such that the light-emitting efficiency can be improved during the growth of semiconductor layers at UV wavelengths. That is, the AlN template 211 can improve the crystallinity of subsequently grown AlGaN-based semiconductor layers, thereby improving the light-emitting efficiency of the UV light-emitting device 200.

[0189] The first conductive semiconductor layer 212 can be formed of a semiconductor compound, for example, a group III-V or II-VI compound semiconductor. The first conductive semiconductor layer 212 can be formed of a single layer or multiple layers. The first conductive semiconductor layer 212 can be doped with a first conductive dopant. For example, when the first conductive semiconductor layer 212 is an n-type semiconductor layer, the first conductive semiconductor layer 212 can include an n-type dopant. For example, the n-type dopant can include Si, Ge, Sn, Se, or Te, but the present invention is not limited thereto.

[0190] The first conductive semiconductor layer 212 of the present embodiment can include a semiconductor material having a composition formula of AlxGa1-xN (0 < x < 1), but the present invention is not limited thereto. For example, the first conductive semiconductor layer 212 can be formed of one or more of AlGaP, InGaP, AlInGaP, InP, GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, and GaP.

[0191] The active layer 214 can be disposed on the first conductive semiconductor layer 212. The active layer 214 can be formed of at least one of a single quantum well structure, an MQW structure, a quantum wire structure, and a quantum dot. The active layer 214 is a layer in which electrons (or holes) injected through the first conductive semiconductor layer 212 and holes (or electrons) injected through the second-first conductive semiconductor layer 216a meet to emit light due to a difference between band gaps of the materials forming the active layer 214.

[0192] The active layer 214 may be made of a compound semiconductor. For example, the active layer 214 may be implemented with at least one of a III-V group or a II-VI group compound semiconductor. The active layer 214 may include a quantum well and a quantum wall. When the active layer 214 is implemented with an MQW structure, the quantum wells and the quantum walls may be arranged alternately. Each of the quantum wells and the quantum walls may be formed by one or more pairs of structures among AlGaN / GaN, AlGaN / AlGaN, InGaN / GaN, InGaN / InGaN, InAlGaN / GaN, GaAs / AlGaAs, InGaAs / AlGaAs, GaP / AlGaP, InGaP and AlGaP, but the present invention is not limited thereto.

[0193] The EBL 230 may be disposed on the active layer 214. The EBL 230 according to the present embodiment may have a single layer structure or a multilayer structure. The EBL 230 may be implemented with at least one of group III-V or group II-VI compound semiconductors, but the present invention is not limited thereto. The EBL 230 may be doped with a second conductive type dopant. For example, when the EBL 230 is a p-type semiconductor layer, the second conductive type dopant may include Mg, Zn, Ca, Sr, or Ba as a p-type dopant.

[0194] The second conductive semiconductor layers 216, 218a, and 218b may include a second-first conductive semiconductor layer 216, a second-first conductive semiconductor layer 218a, and a second-first conductive semiconductor layer 218b.

[0195] The second-first conductive semiconductor layer 216 may be disposed on the EBL 230. The second-first conductive semiconductor layer 216 may be implemented with a III-V group or a II-VI group compound semiconductor. For example, the second-first conductive semiconductor layer 216 may be formed of one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, and InP. The second-first conductive semiconductor layer 216 of the present embodiment may include an AlGaN-based semiconductor material. The second-first conductive semiconductor layer 216 may be doped with a second conductive type dopant. When the second-first conductive semiconductor layer 216 is a p-type semiconductor layer, the second conductive type dopant may include Mg, Zn, Ca, Sr, or Ba as a p-type dopant.

[0196] The second-second conductive semiconductor layer 218a may be disposed on the second-first conductive semiconductor layer 216. The second-second conductive semiconductor layer 218a may include a function of bending the dislocation D from the second-first conductive semiconductor layer 216. To this end, the second-second conductive semiconductor layer 218a may be grown three-dimensionally. The second-second conductive semiconductor layer 218a may have a function of buffering the second-third conductive semiconductor layer 218b grown subsequently. The second-second conductive semiconductor layer 218a may solve defects by bending the dislocation D from the second-first conductive semiconductor layer 216, thereby solving the reverse diffusion of the second conductive type dopant from the EBL 230 to the active layer 214. Reference Fig.16 , the second conductive type dopant Mg of the second-first conductive semiconductor layer 216 according to the present embodiment may be uniformly doped. That is, according to the present embodiment, stable doping of the second-first conductive semiconductor layer 216 may be achieved.

[0197] In the bending of the dislocation D, an angle θ between a straight line connecting a start point DS and a termination point DT of the dislocation D from the second-first conductive semiconductor layer 216 and the upper surface of the second-first conductive semiconductor layer 126 may be 45 degrees or less. Here, when the angle θ between the straight line and the upper surface of the second-second conductive semiconductor layer 218a exceeds 45Ω, the dislocation D may propagate from the second-second conductive semiconductor layer 218a to the second-third conductive semiconductor layer 218b.

[0198] The second-second conductive semiconductor layer 218a may be formed of GaN including a second conductive type dopant, but the present invention is not limited thereto. The second-second conductive semiconductor layer 218a may be three-dimensionally grown to bend the dislocation D from the second-first conductive semiconductor layer 216. That is, the second-second conductive semiconductor layer 218a may improve the propagation of the dislocation D toward the second conductive semiconductor layer 216 by bending the dislocation D from the second-first conductive semiconductor layer 216 from the C-plane direction to the A-plane direction and reducing TDD at the interface with the second-third conductive semiconductor layer 218b.

[0199] Specifically, refer to Fig.17 and 18 , Fig.17 The RSM data of the comparative example is shown, in which the second-second conductive semiconductor layer 218a is omitted, and Fig.18The RSM data of the example including the second-second conductive semiconductor layer 218a is shown. Here, the RSM data is a strain relaxation parameter, and in the comparative example, the RSM data represents the second-first conductive semiconductor layer of AlGaN and P-GaN in a two-dimensional (2D) mode, and in the example, the RSM data represents the second-first conductive semiconductor layer 216 of AlGaN and the second-second conductive semiconductor layer 218a of P-GaN in a three-dimensional (3D) mode.

[0200] Here, the x-axis is inversely proportional to the difference in the A-plane lattice constant (2 / difference in the A-plane lattice constant), and the Y-axis is inversely proportional to the difference in the C-plane lattice constant (2 / difference in the C-plane lattice constant).

[0201] When compared with the comparative example, the example can reduce the parallel mismatch between the second-first conductive semiconductor layer 216 of AlGaN and the second-second conductive semiconductor layer 218a of P-GaN in the 3D mode in the x-axis direction by 10% or more. The parallel mismatch is a strain relaxation parameter that indicates the degree to which the strain is maintained when the second-first conductive semiconductor layer 216 and the second-second conductive semiconductor layer 218a of P-GaN in the 3D mode grow, and the parallel mismatch can resolve dislocations D and defects. Here, because the amount of change in the x-axis is small, the change in strain can be minimized, and the minimization of the amount of change can be defined as maintaining or not releasing the strain. Maintaining the strain can reduce the difference in the A-plane lattice constant between the second-first conductive semiconductor layer 216 of AlGaN and the second-second conductive semiconductor layer 218a of P-GaN in the 3D mode.

[0202] The thickness of the second-second conductive semiconductor layer 218a may be in the range of 10nm to 50nm. When the thickness of the second-second conductive semiconductor layer 218a is less than 10nm, it may be difficult to bend the dislocation D from the second-first conductive semiconductor layer 216 and the dislocation D may propagate to the second-third conductive semiconductor layer 218B. Here, the dislocation D propagating to the second-third conductive semiconductor layer 218b may cause a V-shaped pit or crack. The V-shaped pit or crack may cause leakage current. When the thickness of the second-second conductive semiconductor layer 218a exceeds 50nm, defects may occur from the inside of the second-second conductive semiconductor layer 218a grown in an island shape in three dimensions.

[0203] The roughness (root mean square (RMS)) of the interface between the second-second conductive semiconductor layer 218a and the second-third conductive semiconductor layer 218b may be 1.0 nm or more, for example, in the range of 1.0 nm to 5.0 nm. The second-second conductive semiconductor layer 218a of the present embodiment may be three-dimensionally grown in an island shape to include a roughness (RMS) of 1.0 nm or more of the interface between the second-second conductive semiconductor layer 218a and the second-third conductive semiconductor layer 218b.

[0204] The doping concentration of the second-second conductive semiconductor layer 218a may correspond to the doping concentration of each of the second-first conductive semiconductor layer 216 and the EBL 230. For example, the doping concentration of the second-second conductive semiconductor layer 218a may be in the range of 1E19 to 5E19. The second-second conductive semiconductor layer 218a may have a doping concentration lower than the doping concentration of the second to third conductive semiconductor layers 218b. The doping concentration of the second to third conductive semiconductor layers 218b may be higher than the doping concentration of each of the second-second conductive semiconductor layer 218a, the second-first conductive semiconductor layer 216, and the EBL 230. For example, the doping concentration of the second to third conductive semiconductor layer 218b may be in the range of 5E19 to 1E20. The second to third conductive semiconductor layers 218b may have a doping concentration higher than each of the second-second conductive semiconductor layer 218a, the second-first conductive semiconductor layer 216, and the EBL 230, thereby achieving ohmic contact with the second electrode 253.

[0205] The second-third conductive semiconductor layer 218b may be disposed on the second-second conductive semiconductor layer 218a. For ohmic contact with the second-first conductive semiconductor layer 216 and the second electrode 253, the second-third conductive semiconductor layer 218b may be made of GaN including a second conductive type dopant, but the present invention is not limited thereto. The second-third conductive semiconductor layer 218b may have a flat surface in direct contact with the second electrode 253. To this end, the second-third conductive semiconductor layer 218b may be formed by a 3D mode growth method. Fig.19 2 is a photograph showing the surface of the second-third conductive semiconductor layer 218b according to the embodiment. The second-third conductive semiconductor layer 218b of the present embodiment may have a thickness ranging from 100 nm to 300 nm.

[0206] When the thickness of the second-third conductive semiconductor layer 218b is less than 100nm, it may be difficult for the second-third conductive semiconductor layer 218b to make ohmic contact with the second electrode 253, however, when the thickness of the second-third conductive semiconductor layer 218b exceeds 300nm, new defects may occur in the second-third conductive semiconductor layer 218b.

[0207] The second-third conductive semiconductor layer 218b may have a surface roughness (RMS) of 1 nm or less, for example, in the range of 0.1 nm to 1.0 nm. The second-second conductive semiconductor layer 216b of the present embodiment may have a surface roughness (RMS) of 1 nm or less to improve contact reliability with the second electrode 253 formed subsequently. Figure 1 and Figure 2 The configuration of the above-described embodiment may be directly applied to the configuration of the second-first to second-third conductive semiconductor layers.

[0208] Here, the first conductive semiconductor layer 212 is an n-type semiconductor layer, and the second-first conductive semiconductor layer 216, the second-second conductive semiconductor layer 218a, and the second-third conductive semiconductor layer 218b have been described as p-type semiconductor layers, but the present invention is not limited thereto. The light emitting structure 210 may be implemented with any one of an np junction structure, a pn junction structure, an npn junction structure, and a pnp junction structure.

[0209] The first electrode 251 may be arranged on the first conductive semiconductor layer 212. The first electrode 251 may be electrically connected to the first conductive semiconductor layer 212. The first electrode 251 may be electrically insulated from the second electrode 253. The first electrode 251 may be made of a conductive oxide, a conductive nitride, or a metal. For example, the first electrode 251 may include at least one material of ITO, ITON, IZO, IZON, AZO, AGZO, IZTO, IAZO, IGZO, IGTO, ATO, GZO, IZON, ZnO, IrOx, RuOx, NiO, Au, Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo, and may be formed as a single layer or a multilayer.

[0210] The second electrode 253 may be arranged on the second-third conductive semiconductor layer 218b. The second electrode 253 may be in ohmic contact with the second-third conductive semiconductor layer 218b. The second electrode 253 may be made of a conductive oxide, a conductive nitride, or a metal. For example, the second electrode 253 may include at least one material of ITO, ITON, IZO, IZON, AZO, AGZO, IZTO, IAZO, IGZO, IGTO, ATO, GZO, IZON, ZnO, IrOx, RuOx, NiO, Au, Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo, and may be formed as a single layer or a multilayer.

[0211] According to the present embodiment, the dislocation D from the second-first conductive semiconductor layer 216 is bent by the three-dimensionally grown second-second conductive semiconductor layer 218a, so that the defect can be solved. That is, according to the present embodiment, the second-second conductive semiconductor layer 218a prevents the dislocation D from propagating to the subsequently grown second-third conductive semiconductor layer 218b, so that TDD can be reduced at the interface between the second-second conductive semiconductor layer 218a and the second to third conductive semiconductor layers 218b.

[0212] According to the present embodiment, the second-second conductive semiconductor layer 218a grown in a 3D mode is disposed on the second-first conductive semiconductor layer 216 to bend the dislocation D from the second-first conductive semiconductor layer 216 so that the crystallinity can be improved.

[0213] According to the present embodiment, the propagation of dislocation D is resolved to reduce the TDD of the final semiconductor layer, so that the light emitting efficiency can be improved.

[0214] According to the present embodiment, the doping concentration of the second conductive type dopant of each of the second-first conductive semiconductor layer 216 and the EBL 230 is kept constant so that the back diffusion of the p-dopant from the EBL to the active layer is resolved to improve light extraction efficiency.

[0215] According to the present embodiment, dislocations D or defects are resolved, so that the degradation of electrical characteristics caused by leakage current can be improved.

[0216] According to the present embodiment, the dislocation D or defect is resolved so that the TE polarization of the UV light emitting device can be fully realized.

[0217] Figure 20 to Figure 23 is a cross-sectional view illustrating a method of manufacturing a semiconductor device according to an embodiment.

[0218] refer to Fig. 20 and Fig.21 The method of manufacturing a semiconductor device according to the present embodiment may include forming an AlN template 211, a first conductive semiconductor layer 212, an active layer 214, an EBL 230, a second-first conductive semiconductor layer 216, a second-second conductive semiconductor layer 218a, and a second-third conductive semiconductor layer 218b on a substrate 201.

[0219] The materials of the substrate 201, the AlN template 211, the first conductive semiconductor layer 212, the active layer 214, the EBL 230 and the second-first conductive semiconductor layer 216 and the connection relationship therebetween can be made of Fig.14 and 15 technical features.

[0220] The AlN template 211, the first conductive semiconductor layer 212, the active layer 214, the EBL 230, the second-first conductive semiconductor layer 216 and the second-second conductive semiconductor layer 218a may be formed by metal organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE), etc., but the present invention is not limited thereto.

[0221] The second-second conductive semiconductor layer 218a may be formed on the second-first conductive semiconductor layer 216. The second-second conductive semiconductor layer 218a may include a function of bending dislocations from the second-first conductive semiconductor layer 216. To this end, the second-second conductive semiconductor layer 218a may be grown three-dimensionally. The second-second conductive semiconductor layer 218a may have a function of buffering the second-third conductive semiconductor layer 218b grown subsequently. The second-second conductive semiconductor layer 218a may solve defects by bending dislocations from the second-first conductive semiconductor layer 216, thereby solving the reverse diffusion of the second conductive type dopant from the EBL 230 to the active layer 214. According to the present embodiment, stable doping of the second-first conductive semiconductor layer 216 may be achieved.

[0222] The second-second conductive semiconductor layer 218a may be formed of GaN including a second conductive type dopant, but the present invention is not limited thereto. The second-second conductive semiconductor layer 218a may be three-dimensionally grown to bend dislocations from the second-first conductive semiconductor layer 216. That is, the second-second conductive semiconductor layer 218a may improve the propagation of dislocations toward the second-third conductive semiconductor layer 218b by bending dislocations from the second-first conductive semiconductor layer 216 from the C-plane direction to the A-plane direction and reduce TDD at the interface with the second-third conductive semiconductor layer 218b.

[0223] The thickness of the second-second conductive semiconductor layer 218a may be in the range of 10nm to 50nm. When the thickness of the second-second conductive semiconductor layer 218a is less than 10nm, it may be difficult to bend the dislocation from the second-first conductive semiconductor layer 216, and the dislocation may propagate to the second-third conductive semiconductor layer 218b. Here, the dislocation propagating to the second to third conductive semiconductor layer 218b may cause a V-shaped pit or crack. The V-shaped pit or crack may cause leakage current. When the thickness of the second-second conductive semiconductor layer 218a exceeds 50nm, defects may occur from the inside of the second-second conductive semiconductor layer 218a grown in an island shape in three dimensions.

[0224] The roughness (RMS) of the interface between the second-second conductive semiconductor layer 218a and the second-third conductive semiconductor layer 218b may be 1.0 nm or more, for example, in the range of 1.0 nm to 5.0 nm. The second-second conductive semiconductor layer 218a of the present embodiment may be three-dimensionally grown in an island shape to include an interface roughness (RMS) between the second-second conductive semiconductor layer 218a and the second-third conductive semiconductor layer 218b greater than 1.0 nm.

[0225] The doping concentration of the second-second conductive semiconductor layer 218a may correspond to the doping concentration of each of the second-first conductive semiconductor layer 216 and the EBL 230. For example, the doping concentration of the second-second conductive semiconductor layer 218a may be in the range of 1E19 to 5E19. The second-second conductive semiconductor layer 218a may have a doping concentration lower than the doping concentration of the second-third conductive semiconductor layer 218b. The doping concentration of the second-third conductive semiconductor layer 218b may be higher than the doping concentration of each of the second-second conductive semiconductor layer 218a, the second-first conductive semiconductor layer 216, and the EBL 230. For example, the doping concentration of the second-third conductive semiconductor layer 218b may be in the range of 5E19 to 1E20. The second-third conductive semiconductor layer 218b may have a doping concentration higher than the doping concentration of each of the second-second conductive semiconductor layer 218a, the second-first conductive semiconductor layer 216, and the EBL 230, thereby achieving ohmic contact with the second electrode 253.

[0226] The second-third conductive semiconductor layer 218b may be disposed on the second-second conductive semiconductor layer 218a. For ohmic contact with the second-first conductive semiconductor layer 216 and the second electrode 253, the second-third conductive semiconductor layer 218b may be made of GaN including a second conductive type dopant, but the present invention is not limited thereto. The second-third conductive semiconductor layer 218b may have a flat surface in direct contact with the second electrode 253. To this end, the second-third conductive semiconductor layer 218b may be formed by a 2D growth method. Fig.19 2 is a photograph showing the surface of the second-third conductive semiconductor layer 218b according to the embodiment. The second-third conductive semiconductor layer 218b of the present embodiment may have a thickness ranging from 100 nm to 300 nm.

[0227] When the thickness of the second-third conductive semiconductor layer 218b is less than 100nm, it may be difficult for the second-third conductive semiconductor layer 218b to make ohmic contact with the second electrode 253, and when the thickness of the second-third conductive semiconductor layer 218b exceeds 300nm, new defects may occur in the second-third conductive semiconductor layer 218b.

[0228] The second-third conductive semiconductor layer 218b may have a surface roughness (RMS) of 1 nm or less, for example, in the range of 0.1 nm to 1.0 nm. The second-second conductive semiconductor layer 216b of the present embodiment may have a surface roughness (RMS) of 1 nm or less to improve contact reliability with the second electrode 253 formed subsequently.

[0229] Here, the first conductive semiconductor layer 212 is an n-type semiconductor layer, and the second-first conductive semiconductor layer 216, the second-second conductive semiconductor layer 218a, and the second-third conductive semiconductor layer 218b have been described as p-type semiconductor layers, but the present invention is not limited thereto. The light emitting structure 210 may be implemented with any one of an np junction structure, a pn junction structure, an npn junction structure, and a pnp junction structure.

[0230] refer to Fig. 22 , the first electrode 251 and the second electrode 253 may be formed on the light emitting structure 210. In the light emitting structure 210, a portion of the first conductive semiconductor layer 212 may be exposed from the active layer 214, the EBL 230, the second-first conductive semiconductor layer 216, the second-second conductive semiconductor layer 218a, and the second-third conductive semiconductor layer 218b by mesa etching.

[0231] The first electrode 251 may be formed on the exposed first conductive semiconductor layer 212. The first electrode 251 may be electrically connected to the first conductive semiconductor layer 212. The first electrode 251 may be electrically insulated from the second electrode 253.

[0232] The second electrode 253 may be formed on the second-first conductive semiconductor layer 216. The second electrode 253 may be electrically connected to the second-first conductive semiconductor layer 216.

[0233] Each of the first electrode 251 and the second electrode 253 may be a conductive oxide, a conductive nitride, or a metal. For example, each of the first electrode 251 and the second electrode 253 may include at least one material among ITO, ITON, IZO, IZON, AZO, AGZO, IZTO, IAZO, IGZO, IGTO, ATO, GZO, IZON, ZnO, IrOx, RuOx, NiO, Au, Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo, and may be formed as a single layer or a multilayer.

[0234] refer to Fig.23, the structure according to the present embodiment may be a flip chip structure in which the first electrode 251 and the second electrode 253 are arranged at the lower portion. The first insulating layer 261 may expose a portion of the lower surface of each of the first electrode 251 and the second electrode 253, and may be formed on the light emitting structure 210. The first insulating layer 261 may contact the lower portion of the light emitting structure 210 where the first and second electrodes 251 and 253 are arranged.

[0235] The first connection electrode 271 and the second connection electrode 273 may be formed on the lower surfaces of the first electrode 251 and the second electrode 253 exposed from the first insulating layer 261, respectively. The first connection electrode 271 and the second connection electrode 273 may be formed by an electroplating process, but the present invention is not limited thereto. The first insulating layer 261 may be an oxide or a nitride. For example, the first insulating layer 261 may be formed of at least one selected from the group consisting of SiO2, SixOy, Si3N4, SixNy, SiOxNy, Al2O3, TiO2, AlN, etc.

[0236] Each of the first connection electrode 271 and the second connection electrode 273 may be formed of a metal or alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, and Hf. The first connection electrode 271 and the second connection electrode 273 are made of a single layer or a multilayer formed of a metal, an alloy, or a transparent conductive material such as ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, etc.

[0237] The second insulating layer 263 may be formed below the first insulating layer 261 and may be in direct contact with the first insulating layer 261. The second insulating layer 263 may expose the lower portions of the first connection electrode 271 and the second connection electrode 273 and may be formed on the sides of the first connection electrode 271 and the second connection electrode 273. The second insulating layer 263 may be formed by adding a thermal diffuser to a resin material such as a silicone resin or an epoxy resin. The thermal diffuser may include at least one material among oxides, nitrides, fluorides and sulfides containing Al, Cr, Si, Ti, Zn or Zr, for example, a ceramic material. The thermal diffuser may be defined as a powder particle, particle, filler or additive having a predetermined size. The second insulating layer 263 may be omitted.

[0238] The first and second pads 281 and 283 may be formed on the first and second connection electrodes 271 and 273 exposed from the second insulating layer 263. Each of the first and second pads 281 and 283 may be formed of a metal or an alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, and Hf. The first and second pads 281 and 283 are made into a single layer or a multilayer formed of a metal, an alloy, or a transparent conductive material such as ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, etc.

[0239] The present embodiment includes a substrate 201 disposed above the first conductive semiconductor layer 212, but the present invention is not limited thereto. For example, the substrate 201 may be removed by an LLO process. Here, the LLO process is a process of irradiating a laser onto the lower surface of the substrate 201 to delaminate the substrate 201 from the light emitting structure 210.

[0240] According to the present embodiment, the second-second conductive semiconductor layer 218a grown in a 3D mode is disposed on the second-first conductive semiconductor layer 216 to bend dislocations from the second-first conductive semiconductor layer 216 so that crystallinity may be improved.

[0241] According to the present embodiment, the propagation of dislocations is resolved to reduce the TDD of the final semiconductor layer, so that the light emitting efficiency can be improved.

[0242] According to the present embodiment, the doping concentration of the second conductive type dopant of each of the second-first conductive semiconductor layer 216 and the EBL 230 is kept constant so that the back diffusion of the p-dopant from the EBL to the active layer is resolved to improve light extraction efficiency.

[0243] According to the present embodiment, dislocations or defects are resolved, so that the degradation of electrical characteristics caused by leakage current can be improved.

[0244] According to the present embodiment, dislocations or defects are resolved so that the TE polarization of the UV light emitting device can be fully realized.

[0245] Fig.24 is a cross-sectional view illustrating a light emitting device package according to an embodiment.

[0246] like Fig.24 As shown in , the light emitting device package 300 of the present embodiment may include a light emitting device 200 , a package body 301 , a heat dissipation frame 310 , a protection element 360 , and first and second lead frames 320 and 330 .

[0247] The package body 301 may include at least one of a light-transmitting material, a reflective material, and an insulating material. The package body 301 may include a material having a reflectivity higher than a transmittance for light emitted from the light-emitting device 200. The package body 301 may be formed of a resin-based insulating material. For example, the package body 301 may be formed of at least one of a resin material such as polyphthalamide (PPA) or epoxy resin or silicone resin material, Si, a metal material, photosensitive glass (PSG), Al2O3, and a printed circuit board (PCB). For example, the package body 301 may have a square top view shape, but the present invention is not limited thereto. The top view shape of the package body 301 may have a circular or polygonal shape.

[0248] The package body 301 may be coupled to the first and second lead frames 320 and 330. The body 220 may include a cavity 303 for exposing a portion of an upper surface of each of the first and second lead frames 320 and 330. The cavity 303 may expose a portion of an upper surface of the first lead frame 320 and a portion of an upper surface of the second lead frame 330.

[0249] The first lead frame 320 and the second lead frame 330 may be separated by a predetermined distance to be coupled to the package body 301. The light emitting device 200 and the protection element 360 may be arranged at the second lead frame 330, and the first wire 200W1 of the light emitting device 200 and the wire 360W of the protection element 360 may be connected at the first lead frame 320, but the present invention is not limited thereto. The first lead frame 320 and the second lead frame 330 may include a conductive material. For example, each of the first lead frame 320 and the second lead frame 330 may be made of at least one of Ti, Cu, Ni, Au, Cr, tantalum (Ta), platinum (Pt), Sn, Ag, phosphorus (P), iron (Fe), Zn and Al, and may be formed by multiple layers. For example, each of the first and second lead frames 320 and 330 of the present embodiment may include a base layer including Cu and an anti-oxidation layer including Ag covering the base layer, but the present invention is not limited thereto.

[0250] The second lead frame 330 may include a first lead portion 331a exposed to the central region of the cavity 303, a second lead portion 331b configured to correspond to the shape of the first lead frame 320 by being diagonally symmetrical with the first lead frame 320, and a third lead portion 331c arranged in a corner region of the cavity 303 where the protection element 360 is mounted and a diagonal corner region of the cavity 303. The shape of each of the first to third lead portions 331a, 331b, and 331c including an area and a width may be variously modified on the upper surface of the second lead frame 330 exposed at the lower surface of the cavity 303.

[0251] The first lead frame 320 may have a bent structure diagonally symmetrical to the second lead portion 331 b , but the present invention is not limited thereto.

[0252] The heat dissipation frame 310 may include a first heat dissipation electrode 311 and a second heat dissipation electrode 313 , the first heat dissipation electrode 311 may include a first pad portion 311 a connected to the first wire 200W1 , and the second heat dissipation electrode 313 may include a second pad portion 313 a connected to the second wire 200W2 .

[0253] The light emitting device 200 may be mounted on the heat dissipation frame 310. Although the present embodiment defines the light emitting device package as including the heat dissipation frame 310, the heat dissipation frame 310 may be omitted. When the heat dissipation frame 310 is omitted, the light emitting device 200 may be arranged on the package body 301. The light emitting device 200 may include Figures 1 to 23 technical features.

[0254] The protection element 360 may be arranged on the third lead portion 331c. The protection element 360 may be arranged on the upper surface of the second lead frame 330 exposed from the package body 301. The protection element 360 may be a Zener diode, a thyristor, a transient voltage suppression (TVS), etc., but the present invention is not limited thereto. The protection element 360 of the present embodiment will be described as an example of a Zener diode for protecting the light emitting device 200 from electrostatic discharge (ESD). The protection element 360 may be connected to the first lead frame 310 by a wire.

[0255] The light emitting device package of the present embodiment may include the light emitting device 200 which improves the difference in lattice constants between semiconductor layers, thereby fully realizing TE polarization of the UV light emitting device.

[0256] The above-mentioned light emitting device is configured in a light emitting device package and thus can be used as a light source of a lighting system. For example, the light emitting device package may include a body having a cavity and a lead electrode coupled to the body, and the light emitting device may be arranged on the body to be electrically connected to the lead electrode.

[0257] For example, the light emitting device may be used as a light source of an image display apparatus or a lighting device.

[0258] When the light-emitting device is used as a backlight unit of an image display device, the light-emitting device can be used as an edge-type backlight unit or a direct-type backlight unit, and when the light-emitting device is used as a light source of a lighting device, the semiconductor device can be used as a lighting device or a bulb-type device, and can also be used as a light source for a mobile terminal.

[0259] In addition to the above-mentioned light emitting diodes, light emitting devices also include laser diodes.

[0260] Similar to the light emitting device, the laser diode may include a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer having the above structure. In addition, the laser diode uses an electroluminescence phenomenon in which light is emitted when current flows after a p-type first conductive type semiconductor and an n-type second conductive type semiconductor are combined, but there is a difference in the directionality and phase of the emitted light between the light emitting device and the laser diode. That is, the laser diode can emit light with the same phase in the same direction of a specific single wavelength (i.e., a monochromatic light beam) using a phenomenon called stimulated emission and a constructive interference phenomenon, and, using the above characteristics, the laser diode can be used for optical communications, medical equipment, semiconductor processing equipment, etc.

[0261] Examples of light receiving devices may include a photodetector, which is a transducer that detects light and converts the intensity of the detected light into an electrical signal. Such photodetectors may include photocells (silicon or selenium), photoconductive elements (cadmium sulfide or cadmium selenide), photodiodes (PDs) (e.g., PDs having a peak wavelength in a visible blind spectral region or a true blind spectral region), phototransistors, photomultiplier tubes, phototubes (vacuum or gas-filled), infrared (IR) detectors, etc., but the present invention is not limited thereto.

[0262] In addition, semiconductor devices such as photodetectors can be manufactured using direct bandgap semiconductors, which generally have excellent light conversion efficiency. Alternatively, the photodetector has a variety of structures, including a pin-type photodetector using a pn junction, the most common structure, a Schottky photodetector using a Schottky junction, and a metal-semiconductor-metal (MSM) type photodetector.

[0263] Similar to a light emitting device, a PD may include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer having the above structure, and may be formed of a pn junction or a pin structure. The PD operates by applying a reverse bias or a zero bias, and when light enters the photodiode, electrons and holes are generated, and thus current flows. At this time, the amount of current may be approximately proportional to the intensity of the light incident into the PD.

[0264] A photovoltaic cell or solar cell is a PD that converts light into electric current. Similar to a light emitting device, a solar cell may include a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer having the above structure.

[0265] Furthermore, the solar cell can be used as a rectifier of an electronic circuit by using the rectification characteristics of a general diode of a pn junction, and can be applied to an oscillation circuit or the like by being used in a microwave circuit.

[0266] In addition, the above-mentioned semiconductor devices are not necessarily implemented only by semiconductors, and in some cases may also include metal materials. For example, semiconductor devices such as light receiving devices can be implemented using at least one of Ag, Al, Au, In, Ga, N, Zn, Se, P and As or using semiconductor materials doped with p-type or n-type dopants or intrinsic semiconductor materials. Although the present invention has been mainly described with reference to exemplary embodiments, it should be understood that the present invention is only for illustrative purposes and is not limited to the disclosed exemplary embodiments, and that technicians in the field to which the present invention belongs can design various modifications and applications without departing from the purport of the present invention. For example, each component specifically shown in the embodiment can be modified and implemented. It should be understood that the differences associated with these modifications and applications will fall within the scope of the present invention as defined by the appended claims.

Claims

1. A method for manufacturing a semiconductor device, characterized in that: The semiconductor device comprises: A light emitting structure comprising a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer, wherein the active layer is arranged between the first conductive semiconductor layer and the second conductive semiconductor layer, Wherein, the method comprises: sequentially forming a light absorbing layer and the light emitting structure on a substrate, the light absorbing layer comprising a plurality of first light absorbing layers and a plurality of second light absorbing layers, the plurality of first light absorbing layers and the plurality of second light absorbing layers being alternately stacked; and separating the light absorbing layer at least partially from the first conductive semiconductor layer by irradiating the substrate with laser, wherein the aluminum component of the first light absorbing layer is configured to absorb the laser light, and the aluminum component of the second light absorbing layer is configured not to absorb the laser light, and The first light absorbing layer has an aluminum composition lower than that of the first conductive semiconductor layer, and the second light absorbing layer has an aluminum composition higher than that of the first light absorbing layer.

2. The method according to claim 1, wherein: The thickness of the first light absorbing layer is greater than the thickness of the second light absorbing layer.

3. The method according to claim 2, wherein: A thickness ratio of the first light absorbing layer to the second light absorbing layer is in a range of 2:1 to 6:1; and The total thickness of the light absorbing layer is in the range of 100 nm to 400 nm.

4. The method according to any one of claims 1 to 3, wherein: The aluminum composition of the first light absorbing layer is in the range of 20% to 60%; and The aluminum composition of the second light absorbing layer is in the range of 60% to 100%.

5. The method according to claim 1, wherein: The thickness of the first light absorbing layer is 1-10 nm, and the thickness of the second light absorbing layer is 0.1-20 nm.

6. The method according to claim 1, wherein: The aluminum composition of the second light absorbing layer is higher than the aluminum composition of the light emitting structure.

7. The method according to claim 1, wherein: The material of the second light absorbing layer includes AlGaN or AlN.

8. The method according to claim 1, wherein: The laser includes a KrF laser with a wavelength range of 248 nm.

9. The method according to claim 1, wherein: The method further comprises: The light absorbing layer remaining on the first conductive semiconductor layer is removed by planarization.

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