Liquid circulating cooling package substrate and manufacturing method thereof

Abstract

The application provides a liquid circulation cooling packaging substrate and a manufacturing method thereof. The substrate comprises a circulation cooling structure, which comprises a cooling cavity formed in a first dielectric layer and exposing a heat dissipation surface, a metal heat dissipation layer formed on the inner surface of the cooling cavity, a vertical support column formed on the metal heat dissipation layer, and a cooling cover supported on the support column and closing the cooling cavity along the periphery of the cooling cavity. The metal heat dissipation layer completely covers the heat dissipation surface and the inner surface of the cooling cavity, and the cooling cover is provided with an inlet and an outlet. The circulation cooling structure is arranged in the first dielectric layer and formed in the embedded packaging substrate processing process, so that the processing procedure is simple and the cost is low. The circulation cooling structure is connected with the heat dissipation surface of the device, so that the heat dissipation performance is improved, the space in the substrate is reasonably utilized, and the overall thickness of the substrate is reduced.

Description

Technical Field

[0001] This application relates to the field of semiconductor packaging technology, and in particular to a liquid circulating cooling packaging substrate and its manufacturing method. Background Technology

[0002] With the development and advancement of electronic technology, electronic products are evolving towards smaller, thinner, and lighter designs, while their functional requirements are becoming increasingly powerful. This has driven the development of highly integrated and miniaturized packaging structures for electronic products, leading to the emergence of embedded packaging for components such as chips. Simultaneously, the application of electronic components is moving towards higher frequencies, higher speeds, and higher power, resulting in a rapid increase in heat flux density per unit area. It is well known that as the operating environment temperature rises, the operating speed of electronic components decreases, and losses increase. Furthermore, prolonged operation in high-temperature environments reduces the reliability of electronic products. Therefore, if the heat generated by high-frequency, high-speed, and high-power electronic components cannot be dissipated in a timely manner, the performance and reliability of electronic products will be affected to some extent. Thus, under the major trend of high-frequency, high-speed, and high-power, how to rationally optimize the design of embedded packaging substrates and packages to improve the heat dissipation performance of embedded packaging structures is an important current research topic.

[0003] The two commonly used embedded packaging substrate methods are: (1) mounting the chip and other components onto a polymer frame or core material with a pre-set cavity, and then encapsulating it with a plastic encapsulation material. However, this method has the following disadvantages: with the rise of high-frequency, high-speed, and high-power products, embedded packaging products have extremely high heat dissipation requirements. Even organic polymer materials with good heat dissipation properties have limited heat dissipation characteristics and cannot fundamentally solve the heat dissipation problem of high-frequency, high-speed, and high-power embedded products; (2) using a metal frame to embed components, pre-processing cavities on a metal (e.g., copper) plate, mounting the chip and other components onto the pre-set cavity, and then encapsulating it with a pressing dielectric material. This embedded packaging method utilizes the relatively good heat dissipation performance of metal to replace the organic polymer material frame and improve the heat dissipation performance of the embedded packaging structure. However, the scheme of mounting the chip and other components onto a metal frame and then encapsulating it with a plastic encapsulation material has the following disadvantages: the processing process is complex and the cost is high, and the heat dissipation speed is still slow because the metal frame is covered by a dielectric material. Summary of the Invention

[0004] In view of this, the purpose of this application is to provide a liquid circulation cooling packaging substrate and its manufacturing method to solve the above problems.

[0005] To achieve the above objectives, the first aspect of this application provides a liquid circulation cooling packaging substrate, comprising:

[0006] A device having an active surface and a heat dissipation surface, embedded in at least one through cavity surrounded by a support frame, the support frame including a through post extending through the support frame in the height direction;

[0007] A first dielectric layer on a first surface of the support frame and a second dielectric layer on a second surface of the support frame, wherein the first dielectric layer completely fills the gap between the device and the support frame;

[0008] A circulating cooling structure includes a cooling cavity formed within a first dielectric layer to expose the heat dissipation surface, a metal heat dissipation layer formed on the inner surface of the cooling cavity, an upright support column formed on the metal heat dissipation layer, and a cooling cover supported on the support column to enclose the cooling cavity along the periphery of the cooling cavity, wherein the metal heat dissipation layer completely covers the heat dissipation surface and the inner surface of the cooling cavity, and the cooling cover has a liquid inlet and a liquid outlet.

[0009] A first circuit layer is formed on the first dielectric layer and a second circuit layer is formed on the second dielectric layer, wherein the second circuit layer is electrically connected to a terminal on the active surface of the device, and the first circuit layer and the second circuit layer are electrically connected through the conductive post.

[0010] In some embodiments, the cooling cap is connected to the outer periphery of the support column and the metal heat dissipation layer by solder or corrosion-resistant adhesive, thereby sealing the cooling cavity.

[0011] In some embodiments, the inlet and the outlet are located on both sides of the support column.

[0012] In some embodiments, the metal heat dissipation layer includes a copper layer.

[0013] In some embodiments, a solder mask layer is further provided on the outer surfaces of the first circuit layer and the second circuit layer.

[0014] Based on the same inventive concept, a second aspect of this application provides a method for manufacturing a liquid-circulating cooled packaging substrate, comprising:

[0015] (a) A prefabricated support frame, the support frame including a through post extending through the support frame in the height direction and at least one through cavity surrounded by the support frame.

[0016] (b) A device having an active surface and a heat dissipation surface is installed in the through cavity, and a first dielectric layer is applied to the first surface of the support frame such that the first dielectric layer completely fills the gap between the device and the support frame.

[0017] (c) An opening is made in the first dielectric layer to form a first pattern, the first pattern including a cooling cavity that exposes the heat dissipation surface of the device, and the first pattern is filled to form a first circuit layer and a metal heat dissipation layer on the heat dissipation surface, wherein the metal heat dissipation layer completely covers the heat dissipation surface and the inner surface of the cooling cavity.

[0018] (d) A second dielectric layer is applied to the second surface of the support frame, and a second pattern is formed by opening holes in the second dielectric layer. The second pattern exposes the terminals on the active surface of the device. The second pattern is filled to form a second circuit layer, wherein the first circuit layer and the second circuit layer are electrically connected through the conductive post.

[0019] (e) A support column is formed on the metal heat dissipation layer on the heat dissipation surface of the device, and a cooling cover is applied to the support column, the cooling cover enclosing the cooling cavity along the periphery of the cooling cavity, wherein an inlet and an outlet are formed on the cooling cover.

[0020] In some embodiments, step (b) includes:

[0021] (b1) Apply a temporary carrier to the second surface of the support frame;

[0022] (b2) The device is placed in the through cavity such that the active surface of the device is attached to the temporary carrier;

[0023] (b3) The first dielectric layer is formed on the first surface of the support frame;

[0024] (b4) Remove the temporary carrier.

[0025] In some embodiments, step (c) includes:

[0026] (c1) A first metal seed layer is formed on the first dielectric layer;

[0027] (c2) Apply a first photoresist layer to the first metal seed layer, and expose and develop to form the first pattern;

[0028] (c3) Electroplating is performed in the first pattern to form the first circuit layer and the metal heat dissipation layer on the heat dissipation surface;

[0029] (c4) Remove the first photoresist layer and the first metal seed layer.

[0030] In some embodiments, in step (c), the metal heat dissipation layer includes a copper layer.

[0031] In some embodiments, step (d) includes:

[0032] (d1) A second metal seed layer is formed on the second dielectric layer;

[0033] (d2) Apply a second photoresist layer onto the second metal seed layer, and expose and develop to form the second pattern;

[0034] (d3) Electroplating is performed to form the second circuit layer in the second pattern;

[0035] (d4) Remove the second photoresist layer and the second metal seed layer.

[0036] In some embodiments, step (e) includes:

[0037] (e1) A third dielectric layer is formed by filling the cooling cavity with dielectric material;

[0038] (e2) Laser windowing is performed on the third dielectric layer to form a third pattern that exposes the metal heat dissipation layer;

[0039] (e3) Electroplating fills the third pattern to form the support column;

[0040] (e4) Remove the third dielectric layer.

[0041] In some embodiments, step (e) further includes:

[0042] (e1') A third photoresist layer is formed by filling the cooling cavity with photoresist material;

[0043] (e2') Expose and develop the third photoresist layer to form a third pattern that exposes the metal heat dissipation layer;

[0044] (e3') Electroplating fills the third pattern to form the support column;

[0045] (e4') Remove the third photoresist layer.

[0046] In some embodiments, in step (e), the cooling cap connects the support column and the outer periphery of the metal heat dissipation layer with solder or corrosion-resistant adhesive, thereby sealing the cooling cavity.

[0047] In some embodiments, it also includes:

[0048] (f) After step (e), solder resist material is applied to the first circuit layer and the second circuit layer respectively to form a solder resist layer.

[0049] As can be seen from the above, the liquid circulating cooling packaging substrate and its fabrication method provided in this application directly form a circulating cooling structure on the heat dissipation surface of the device within the first dielectric layer. This circulating cooling structure is formed during the embedding packaging substrate processing, resulting in a simple and low-cost process. The circulating cooling structure can be connected to an external liquid cooling system, allowing external coolant to enter the circulating cooling structure from the inlet, flow through the cooling chamber, and finally exit from the outlet of the circulating cooling structure. The coolant can quickly remove the heat generated during device operation, greatly improving the heat dissipation performance of the embedded packaging structure. Furthermore, the connection between the circulating cooling structure and the heat dissipation surface of the device not only improves heat dissipation performance but also makes reasonable use of the space within the substrate, reducing the overall thickness of the substrate. The support pillars in the circulating cooling structure can also cause disturbances in the coolant entering the circulating cooling structure, forming turbulence and further improving the heat dissipation efficiency of the device. Attached Figure Description

[0050] To more clearly illustrate the technical solutions in this application or related technologies, the drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0051] Figure 1 This is a cross-sectional schematic diagram of a liquid circulation cooling packaging substrate according to an embodiment of the present invention;

[0052] Figure 2 This is a cross-sectional schematic diagram of a circulating cooling structure according to an embodiment of the present invention;

[0053] Figures 3 to 12 This is a cross-sectional schematic diagram of the intermediate structures in each step of the manufacturing method of a liquid circulation cooling packaging substrate according to an embodiment of the present invention.

[0054] In the diagram, 1. Support frame; 11. Conductive post; 12. Through cavity; 2. Device; 21. Active surface; 22. Heat dissipation surface; 3. Circulating cooling structure; 31. Metal heat dissipation layer; 32. Cooling cavity; 33. Support post; 34. Cooling cover; 341. Liquid inlet; 342. Liquid outlet; 5. Second dielectric layer; 6. First circuit layer; 7. Second circuit layer; 8. Solder mask layer; 9. Temporary carrier. Detailed Implementation

[0055] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with specific embodiments and the accompanying drawings.

[0056] It should be noted that, unless otherwise defined, the technical or scientific terms used in the embodiments of this application should have the ordinary meaning understood by one of ordinary skill in the art to which this application pertains. The terms "first," "second," and similar terms used in the embodiments of this application do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Terms such as "comprising" or "including" mean that the element or object preceding the word encompasses the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Terms such as "connected" or "linked" are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. Terms such as "upper," "lower," "left," and "right" are only used to indicate relative positional relationships; when the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0057] refer to Figure 1 This application provides a liquid circulation cooling packaging substrate, comprising:

[0058] A device 2 having an active surface 21 and a heat dissipation surface 22 is embedded in at least one through cavity 12 surrounded by a support frame 1, the support frame 1 including a conductive post 11 extending through the support frame 1 in the height direction.

[0059] A first dielectric layer on the first surface of the support frame 1 and a second dielectric layer 5 on the second surface of the support frame 1, wherein the first dielectric layer completely fills the gap between the device 2 and the support frame 1;

[0060] The circulating cooling structure 3 includes a cooling cavity 32 formed in the first dielectric layer to expose the heat dissipation surface 22, a metal heat dissipation layer 31 formed on the inner surface of the cooling cavity 32, an upright support column 33 formed on the metal heat dissipation layer 31, and a cooling cover 34 supported on the support column 33 to close the cooling cavity 32 along the periphery of the cooling cavity 32, wherein the metal heat dissipation layer 31 completely covers the heat dissipation surface 22 and the inner surface of the cooling cavity 32, and the cooling cover 34 has a liquid inlet 341 and a liquid outlet 342 formed on it.

[0061] A first circuit layer 6 is formed on the first dielectric layer and a second circuit layer 7 is formed on the second dielectric layer 5, wherein the second circuit layer 7 is electrically connected to the terminals on the active surface 21 of the device 2, and the first circuit layer 6 and the second circuit layer 7 are electrically connected through the conductive post 11.

[0062] Specifically, the support frame 1 can be made of a polymer material, such as polyimide, epoxy resin, bismaleimide, triazine resin, glass fiber reinforced resin, or a combination thereof. It is worth noting that the number of through cavities 12 can be one or more; for ease of description, this embodiment uses one through cavity 12 as an example. The conductive post 11 can include at least one conductive copper post as an I / O channel, and their cross-sectional dimensions can be the same or different; the shape of the conductive post 11 can be set according to actual needs, for example, it can be square, circular, etc., and is not specifically limited.

[0063] The device 2 can be a bare chip, such as an integrated circuit driver chip (IC driver), a field-effect transistor (FET), etc.; it can also be a passive device 2, such as a capacitor, resistor, or inductor; it can also be a single package after preliminary packaging, such as a ball grid array (BGA) / grid array (LGA), etc.; or a combination of multiple devices 2. The device 2 can be a device 2 with terminals on one side or a device 2 with terminals on both sides. In this embodiment, the device 2 is described as a chip with terminals on one side, but it is not limited to performing subsequent operations only on chips with terminals on one side.

[0064] The first dielectric layer and the second dielectric layer 5 may be made of at least one material selected from epoxy resin, phenolic resin, benzocyclobutene resin, polyesterimide resin, ABF, etc.

[0065] The circulating cooling structure 3 is located within the first dielectric layer and connected to the heat dissipation surface 22 of the device 2. This not only improves heat dissipation performance but also makes efficient use of the space within the substrate, reducing the overall thickness of the substrate. The metal heat dissipation layer 31 protects the device 2 from moisture and also utilizes its own metal material for auxiliary heat dissipation, further improving the substrate's heat dissipation performance. Specifically, the metal heat dissipation layer 31 includes a copper layer, leveraging the excellent thermal conductivity of copper to further enhance the substrate's heat dissipation performance.

[0066] The support post 33 is located on the metal heat dissipation layer 31 corresponding to the heat dissipation surface 22. One end of the support post 33 is connected to the cooling cover 34, and the other end is connected to the heat dissipation surface 22 of the device 2. The support post 33 may include at least one conductive copper post as an I / O channel.

[0067] refer to Figure 2The cooling cover 34 is connected to the outer periphery of the support column 33 and the metal heat dissipation layer 31 by solder or corrosion-resistant adhesive, thereby sealing the cooling cavity 32. The cooling cover 34 has an inlet 341 and an outlet 342, located on both sides of the support column 33. The inlet 341 is used to connect to an external liquid inlet system, and the outlet 342 is used to connect to an external liquid outlet system. This allows the circulating cooling structure 3 to be connected to both external liquid inlet and outlet systems, enabling external coolant to enter the circulating cooling structure 3 from the inlet 341, flow through the cooling cavity 32, and finally exit from the outlet 342. The coolant can quickly remove the heat generated by the device 2 during operation, greatly improving the heat dissipation performance of the embedded packaging structure. Furthermore, the circulating cooling structure 3 is connected to the heat dissipation surface 22 of the device 2, which not only improves heat dissipation performance but also makes reasonable use of the space within the substrate, reducing the overall thickness of the substrate.

[0068] In some embodiments, the substrate further includes a solder resist layer 8 disposed on the outer surfaces of the first circuit layer 6 and the second circuit layer 7. The solder resist layer 8 may be made of a solder resist material, which can be applied by coating, film application or printing, and the solder resist layer 8 can be formed by exposure and development; the exposed metal can be surface treated by electroless gold plating, electroless silver plating, gold plating or tin plating.

[0069] Based on the same inventive concept, the second aspect of this application provides a method for manufacturing a liquid circulating cooling packaging substrate, which specifically includes the following steps.

[0070] Step (a), refer to Figure 3 A prefabricated support frame 1, the support frame 1 including a guide post 11 extending through the support frame 1 along the height direction and at least one through cavity 12 surrounded by the support frame 1.

[0071] Specifically, the number of through cavities 12 can be one or more. For ease of description, this embodiment uses one through cavity 12 as an example. The conductive post 11 can include at least one conductive copper post as an IO channel. Its cross-sectional dimensions can be the same or different. The shape of the conductive post 11 can be set according to actual needs. For example, it can be square, circular, etc., and there is no specific limitation.

[0072] Step (b), refer to Figure 4 A device 2 having an active surface 21 and a heat dissipation surface 22 is installed in the through cavity 12, and a first dielectric layer is applied to the first surface of the support frame 1 such that the first dielectric layer completely fills the gap between the device 2 and the support frame 1.

[0073] Specifically, step (b) includes the following steps:

[0074] Step (b1), see reference Figure 4 A temporary carrier 9 is applied to the second surface of the support frame 1. The temporary carrier 9 can be tape, adhesive paper, or adhesive cloth, etc., and serves to provide a temporary bearing surface at the bottom of the through cavity 12.

[0075] In step (b2), the device 2 is placed inside the through cavity 12, such that the active surface 21 of the device 2 is attached to the temporary carrier 9. The temporary carrier 9 provides stable support for the device 2.

[0076] Step (b3), see reference Figure 5 The first dielectric layer is formed on the first surface of the support frame 1. The first dielectric layer completely fills the gap between the device 2 and the support frame 1.

[0077] Step (b4), see reference Figure 6 Remove the temporary carrier 9.

[0078] Specifically, the temporary carrier 9 is removed to facilitate the subsequent application of the second dielectric layer 5 on the second surface of the support frame 1.

[0079] Step (c), refer to Figure 8 , Figure 9 A first pattern is formed by opening holes in the first dielectric layer. The first pattern includes a cooling cavity 32 that exposes the heat dissipation surface 22 of the device 2. The first pattern is filled to form a first circuit layer 6 and a metal heat dissipation layer 31 on the heat dissipation surface 22. The metal heat dissipation layer 31 completely covers the inner surface of the heat dissipation surface 22 and the cooling cavity 32.

[0080] Specifically, step (c) includes the following steps:

[0081] Step (c1) involves forming a first metal seed layer on the first dielectric layer. Typically, the first metal seed layer can be formed on the first dielectric layer by chemical plating or sputtering. The first metal seed layer may include titanium, copper, a titanium-tungsten alloy, or a combination thereof. Preferably, titanium and copper are sputtered to form the first metal seed layer.

[0082] Step (c2) involves applying a first photoresist layer onto the first metal seed layer and then exposing and developing it to form the first pattern. Typically, the first photoresist layer can be applied to the first metal seed layer by lamination or coating; the thickness of the first photoresist layer can be adjusted as needed.

[0083] Step (c3) involves electroplating the first circuit layer 6 and the metal heat dissipation layer 31 on the heat dissipation surface 22 within the first pattern. The thickness of the first circuit layer 6 and the metal heat dissipation layer 31 on the heat dissipation surface 22 can be set according to actual needs, and typically its thickness is not greater than that of the first photoresist layer. The metal heat dissipation layer 31 includes a copper layer to improve the heat dissipation performance of the substrate.

[0084] Step (c4): Remove the first photoresist layer and the first metal seed layer. Typically, the first photoresist layer can be removed by stripping and the first metal seed layer can be removed by etching.

[0085] Step (d), see reference Figure 7 , Figure 8 A second dielectric layer 5 is applied to the second surface of the support frame 1, and a second pattern is formed by opening holes in the second dielectric layer 5. The second pattern exposes the terminals on the active surface 21 of the device 2. The second pattern is filled to form a second circuit layer, wherein the first circuit layer 6 and the second circuit layer 7 are electrically connected through the conductive post 11.

[0086] Specifically, step (d) includes the following steps:

[0087] Step (d1) involves forming a second metal seed layer on the second dielectric layer 5. Typically, the second metal seed layer can be formed on the second dielectric layer 5 by chemical plating or sputtering. The second metal seed layer may include titanium, copper, a titanium-tungsten alloy, or a combination thereof. Preferably, titanium and copper are sputtered to form the second metal seed layer.

[0088] Step (d2): A second photoresist layer is applied to the second metal seed layer, and the second pattern is formed by exposure and development. Typically, the second photoresist layer can be applied to the second metal seed layer by lamination or coating; the thickness of the second photoresist layer can be adjusted as needed.

[0089] In step (d3), the second circuit layer 7 is formed by electroplating in the second pattern. The thickness of the second circuit layer 7 can be set according to actual needs, and its thickness is usually no greater than that of the second photoresist layer.

[0090] Step (d4): Remove the second photoresist layer and the second metal seed layer. Typically, the first photoresist layer can be removed by stripping and the first metal seed layer can be removed by etching.

[0091] Step (e), see reference Figure 10 , Figure 11 and Figure 12A support column 33 is formed on the metal heat dissipation layer 31 on the heat dissipation surface 22 of the device 2, and a cooling cover 34 is applied to the support column 33. The cooling cover 34 closes the cooling cavity 32 along the periphery of the cooling cavity 32, wherein the cooling cover 34 has a liquid inlet 341 and a liquid outlet 342.

[0092] The cooling cover 34 is connected to the outer periphery of the support column 33 and the metal heat dissipation layer 31 by solder or corrosion-resistant adhesive, thereby sealing the cooling cavity 32. The cooling cover 34 has an inlet 341 and an outlet 342, located on both sides of the support column 33. The inlet 341 is used to connect to an external liquid inlet system, and the outlet 342 is used to connect to an external liquid outlet system. This allows the circulating cooling structure 3 to be connected to both external liquid inlet and outlet systems, enabling external coolant to enter the circulating cooling structure 3 from the inlet 341, flow through the cooling cavity 32, and finally exit from the outlet 342. The coolant can quickly remove the heat generated by the device 2 during operation, greatly improving the heat dissipation performance of the embedded packaging structure. Furthermore, the circulating cooling structure 3 is connected to the heat dissipation surface 22 of the device 2, which not only improves heat dissipation performance but also makes reasonable use of the space within the substrate, reducing the overall thickness of the substrate.

[0093] Specifically, step (e) may include the following two specific implementation methods.

[0094] Implementation Method 1: Step (e) specifically includes the following steps:

[0095] Step (e1) involves filling the cooling cavity 32 with dielectric material to form a third dielectric layer. The dielectric material may be FR4.

[0096] Step (e2) involves laser-windowing the third dielectric layer to form a third pattern that exposes the metal heat dissipation layer 31. Typically, the third dielectric layer is locally thinned using laser engraving, drilling, or plasma etching to create the third pattern that exposes the metal heat dissipation layer 31. Specifically, the third dielectric layer can be thinned overall using grinding or plasma etching, or locally using laser engraving or drilling.

[0097] Step (e3) Electroplating fills the third pattern to form the support column 33;

[0098] Step (e4) Remove the third dielectric layer.

[0099] Implementation Method Two: Step (e) specifically includes the following steps:

[0100] Step (e1') involves filling the cooling cavity 32 with photoresist material to form a third photoresist layer. In this step, photoresist material can be used as a filler material, serving the same function as dielectric material.

[0101] Step (e2') exposes and develops the third photoresist layer to form a third pattern that exposes the metal heat dissipation layer 31;

[0102] Step (e3') Electroplating fills the third pattern to form the support column 33;

[0103] Step (e4') removes the third photoresist layer.

[0104] The specific implementation methods for each of the above steps are as described above and will not be repeated here.

[0105] In some embodiments, the method for manufacturing the liquid circulating cooling packaging substrate further includes step (f) after step (e): applying solder resist material to the first circuit layer 6 and the second circuit layer 7 respectively to form a solder resist layer 8.

[0106] Specifically, solder resist material can be applied by coating, laminating, or printing, and then exposed and developed to form a solder resist layer 8. Exposed metals can also be surface-treated by electroless gold plating, electroless silver plating, gold plating, or tin plating.

[0107] In summary, the liquid circulating cooling packaging substrate fabrication method provided in this application involves setting a circulating cooling structure 3 within the first dielectric layer. This circulating cooling structure 3 is formed during the embedding packaging substrate fabrication process, resulting in a simple and low-cost fabrication process. The circulating cooling structure 3 can be connected to an external liquid inlet system and an external liquid outlet system, allowing external coolant to enter the circulating cooling structure 3 from the inlet 341, flow through the cooling chamber 32, and finally exit from the outlet 342 of the circulating cooling structure 3. The coolant can quickly remove the heat generated during the operation of the device 2, significantly improving the heat dissipation performance of the embedded packaging structure. Furthermore, the circulating cooling structure 3 is connected to the heat dissipation surface 22 of the device 2, which not only improves heat dissipation performance but also makes reasonable use of the space within the substrate, reducing the overall thickness of the substrate. Simultaneously, the metal heat dissipation layer 31 itself can assist in heat dissipation, and combined with the conductive heat dissipation of the circulating cooling liquid, the coolant can quickly remove the heat generated during the operation of the device 2, significantly improving the heat dissipation performance of the embedded packaging substrate.

[0108] It is worth noting that the sequential numbering of method steps in the description of the embodiments of the present invention is for ease of review and understanding. Adjusting the implementation order of the steps, considering the overall technical solution of the present invention and the logical relationships between them, will not affect the technical effect achieved by the present invention. Some manufacturing steps involved in this embodiment, such as seed layer processing, pattern transfer, and pattern electroplating, are not described in detail here because the materials and processes involved in these steps are common knowledge in the art. It can be stated with certainty that when designing corresponding steps for a specific product, those skilled in the art can make appropriate selections from various alternative materials and manufacturing processes based on a clear understanding of parameters such as production volume, substrate complexity, and component resolution.

[0109] It should be noted that the above description describes some embodiments of this disclosure. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps recorded in the claims can be performed in a different order than that shown in the above embodiments and still achieve the desired result. Furthermore, the processes depicted in the drawings do not necessarily require a specific or sequential order to achieve the desired result. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.

[0110] Those skilled in the art should understand that the discussion of any of the above embodiments is merely exemplary and is not intended to imply that the scope of this disclosure (including the claims) is limited to these examples; within the framework of this disclosure, the technical features of the above embodiments or different embodiments can also be combined, the steps can be implemented in any order, and there are many other variations of different aspects of the embodiments of this disclosure as described above, which are not provided in detail for the sake of brevity.

[0111] This disclosure is intended to cover all such substitutions, modifications, and variations that fall within the broad scope of the appended claims. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this disclosure should be included within the scope of protection of this disclosure.

Claims

1. A liquid-circulating cooling packaging substrate, characterized in that, include: A device having an active surface and a heat dissipation surface, embedded in at least one through cavity surrounded by a support frame, the support frame including a through post extending through the support frame in the height direction; A first dielectric layer on a first surface of the support frame and a second dielectric layer on a second surface of the support frame, wherein the first dielectric layer completely fills the gap between the device and the support frame; A circulating cooling structure includes a cooling cavity formed within a first dielectric layer to expose the heat dissipation surface, a metal heat dissipation layer formed on the inner surface of the cooling cavity, an upright support column formed on the metal heat dissipation layer, and a cooling cover supported on the support column to enclose the cooling cavity along the periphery of the cooling cavity, wherein the metal heat dissipation layer completely covers the heat dissipation surface and the inner surface of the cooling cavity, and the cooling cover has a liquid inlet and a liquid outlet. A first circuit layer formed on the first dielectric layer and a second circuit layer formed on the second dielectric layer, wherein the second circuit layer is electrically connected to a terminal on the active surface of the device, and the first circuit layer and the second circuit layer are electrically connected through the conductive post; The method for manufacturing the liquid circulation cooling packaging substrate includes: (a) A prefabricated support frame, the support frame including a through post extending through the support frame in the height direction and at least one through cavity surrounded by the support frame. (b) A device having an active surface and a heat dissipation surface is installed in the through cavity, and a first dielectric layer is applied to the first surface of the support frame such that the first dielectric layer completely fills the gap between the device and the support frame. (c) An opening is made in the first dielectric layer to form a first pattern, the first pattern including a cooling cavity that exposes the heat dissipation surface of the device, and the first pattern is filled to form a first circuit layer and a metal heat dissipation layer on the heat dissipation surface, wherein the metal heat dissipation layer completely covers the heat dissipation surface and the inner surface of the cooling cavity. (d) A second dielectric layer is applied to the second surface of the support frame, and a second pattern is formed by opening holes in the second dielectric layer. The second pattern exposes the terminals on the active surface of the device. The second pattern is filled to form a second circuit layer, wherein the first circuit layer and the second circuit layer are electrically connected through the conductive post. (e) A support column is formed on the metal heat dissipation layer on the heat dissipation surface of the device, and a cooling cover is applied to the support column. The cooling cover closes the cooling cavity along the periphery of the cooling cavity, wherein an inlet and an outlet are formed on the cooling cover. Step (e) includes: (e1) A third dielectric layer is formed by filling the cooling cavity with dielectric material; (e2) A third pattern is formed by laser-opening a window in the third dielectric layer to expose the metal heat dissipation layer; (e3) Electroplating fills the third pattern to form the support column; (e4) Remove the third dielectric layer.

2. The liquid circulating cooling packaging substrate according to claim 1, characterized in that, The cooling cover is connected to the outer periphery of the support column and the metal heat dissipation layer by solder or corrosion-resistant adhesive, thereby sealing the cooling cavity.

3. The liquid circulation cooling packaging substrate according to claim 1, characterized in that, The inlet and outlet are located on both sides of the support column.

4. The liquid circulating cooling packaging substrate according to claim 1, characterized in that, The metal heat dissipation layer includes a copper layer.

5. The liquid circulating cooling packaging substrate according to claim 1, characterized in that, It also includes solder mask layers disposed on the outer surfaces of the first circuit layer and the second circuit layer.

6. A method for manufacturing a liquid-circulating cooled encapsulation substrate, characterized in that, include: (a) A prefabricated support frame, the support frame including a through post extending through the support frame in the height direction and at least one through cavity surrounded by the support frame. (b) A device having an active surface and a heat dissipation surface is installed in the through cavity, and a first dielectric layer is applied to the first surface of the support frame such that the first dielectric layer completely fills the gap between the device and the support frame. (c) An opening is made in the first dielectric layer to form a first pattern, the first pattern including a cooling cavity that exposes the heat dissipation surface of the device, and the first pattern is filled to form a first circuit layer and a metal heat dissipation layer on the heat dissipation surface, wherein the metal heat dissipation layer completely covers the heat dissipation surface and the inner surface of the cooling cavity. (d) A second dielectric layer is applied to the second surface of the support frame, and a second pattern is formed by opening holes in the second dielectric layer. The second pattern exposes the terminals on the active surface of the device. The second pattern is filled to form a second circuit layer, wherein the first circuit layer and the second circuit layer are electrically connected through the conductive post. (e) A support column is formed on the metal heat dissipation layer on the heat dissipation surface of the device, and a cooling cover is applied to the support column. The cooling cover closes the cooling cavity along the periphery of the cooling cavity, wherein an inlet and an outlet are formed on the cooling cover. Step (e) includes: (e1) A third dielectric layer is formed by filling the cooling cavity with dielectric material; (e2) Laser windowing is performed on the third dielectric layer to form a third pattern that exposes the metal heat dissipation layer; (e3) Electroplating fills the third pattern to form the support column; (e4) Remove the third dielectric layer.

7. The manufacturing method according to claim 6, characterized in that, Step (b) includes: (b1) Apply a temporary carrier to the second surface of the support frame; (b2) Place the device in the through cavity such that the active surface of the device is attached to the temporary carrier; (b3) The first dielectric layer is formed on the first surface of the support frame; (b4) Remove the temporary carrier.

8. The manufacturing method according to claim 7, characterized in that, Step (c) includes: (c1) A first metal seed layer is formed on the first dielectric layer; (c2) Apply a first photoresist layer to the first metal seed layer, and expose and develop to form the first pattern; (c3) Electroplating is performed in the first pattern to form the first circuit layer and the metal heat dissipation layer on the heat dissipation surface; (c4) Remove the first photoresist layer and the first metal seed layer.

9. The manufacturing method according to claim 6, characterized in that, In step (c), the metal heat dissipation layer includes a copper layer.

10. The manufacturing method according to claim 6, characterized in that, Step (d) includes: (d1) A second metal seed layer is formed on the second dielectric layer; (d2) A second photoresist layer is applied to the second metal seed layer, and the second pattern is formed by exposure and development; (d3) Electroplating is performed in the second pattern to form the second circuit layer; (d4) Remove the second photoresist layer and the second metal seed layer.

11. The manufacturing method according to claim 6, characterized in that, Step (e) further includes: (e1') A third photoresist layer is formed by filling the cooling cavity with photoresist material; (e2') Expose and develop the third photoresist layer to form a third pattern that exposes the metal heat dissipation layer; (e3') Electroplating fills the third pattern to form the support column; (e4') Remove the third photoresist layer.

12. The manufacturing method according to claim 6, characterized in that, In step (e), the cooling cover connects the support column and the outer periphery of the metal heat dissipation layer with solder or corrosion-resistant adhesive, thereby sealing the cooling cavity.

13. The manufacturing method according to claim 6, characterized in that, Also includes: (f) After step (e), solder resist material is applied to the first circuit layer and the second circuit layer respectively to form a solder resist layer.

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