Power semiconductor module and method of producing a power semiconductor module

Abstract

The invention relates to a power semiconductor module and a method for producing a power semiconductor module, the module comprising a base plate, a power semiconductor assembly, a housing element and a DC voltage connection device, the voltage connection device having a flat lead connection device and a second flat lead connection element, the flat lead connection device having a first flat lead connection element, which is enclosed by a plastic element of the flat lead connection device and is bonded with the plastic element material, a connection section of the first connection element protruding from the plastic element, a connection section of the second connection element being arranged on the plastic element or at least partially enclosed by the plastic element and being bonded with the plastic element material, such that a section of the plastic element is arranged between the connection sections of the first connection element and the second connection element, the voltage connection device being bonded with the housing element material, at least one part of the connection section of the first connection element and at least one part of the connection section of the second connection element being arranged outside the housing element.

Description

Technical Field

[0001] This invention relates to a power semiconductor module and a method for manufacturing a power semiconductor module. Background Technology

[0002] DE 10 2017 109 706B3 discloses a power semiconductor module including a first flat lead connection element and a second flat lead connection element, with a non-conductive insulating layer disposed between them. The housing element of the power semiconductor module forms a bearing for the flat lead connection elements and the insulating layer.

[0003] The production of such power semiconductor modules is technically complex because the necessary precise positioning of the insulating layer (plastic film) relative to the flat lead connectors, as well as the precise positioning of the flat lead connectors and the insulating layer relative to the housing components of the power semiconductor module, are technically complex and therefore hinder the efficient production of power semiconductor modules. Summary of the Invention

[0004] The purpose of this invention is to provide a power semiconductor module that can be manufactured efficiently. The power semiconductor module includes a first flat lead connection element and a second flat lead connection element, with a non-conductive insulating layer disposed between the two.

[0005] This objective is achieved through a power semiconductor module comprising a substrate having a non-conductive insulating layer and a metal layer, the metal layer being disposed on and structured to form conductive traces; a power semiconductor component disposed on and conductively connected to the metal layer; a housing element; and a DC voltage connection device having a flat lead connection device and a second flat lead connection element, wherein the flat lead connection device has a first flat lead connection element encapsulated by and bonded to a plastic element material of the flat lead connection device, wherein a connection segment of the first flat lead connection element protrudes from the plastic element, and wherein the second flat lead connection element... The connection segment of the lead connector is disposed on or at least partially enclosed by the plastic element and bonded to the plastic element material, such that a portion of the plastic element is disposed between the connection segments of the first flat lead connector and the second flat lead connector, wherein the first flat lead connector and the second flat lead connector are conductively connected to a structured metal layer, wherein during operation of the power semiconductor module, the first flat lead connector has a first polarity and the second flat lead connector has a second polarity, wherein the DC voltage connection device is bonded to the housing element material, and wherein at least a portion of the connection segment of the first flat lead connector and at least a portion of the connection segment of the second flat lead connector are disposed outside the housing element.

[0006] It proves advantageous to bond the first flat lead connector to the plastic component material via injection molding, particularly by injection molding the first flat lead connector into the plastic component, thus bonding the first flat lead connector to the plastic component material. As a result, power semiconductor modules can be produced with exceptionally high efficiency.

[0007] Furthermore, it is advantageous if the housing element is formed of plastic and bonded to the housing element material via injection molding technology using a DC voltage connection device, particularly if the DC voltage connection device is injection molded into the housing element and bonded to the housing element material. As a result, power semiconductor modules can be produced with particularly high efficiency.

[0008] Furthermore, it proves advantageous if the DC voltage connection device is bonded to the housing element material via a plastic component and / or a second flat lead connection element. As a result, the DC voltage connection device is mechanically and stably connected to the housing element.

[0009] Furthermore, it proves advantageous if the housing element extends laterally around the substrate. As a result, the power semiconductor element is protected from contamination.

[0010] Furthermore, it is advantageous if the section of the plastic element disposed between the connection section of the first flat lead connector and the second flat lead connector has a thickness of 150 μm to 1000 μm, particularly preferably 500 μm to 750 μm. As a result, high electrical insulation strength is achieved.

[0011] Furthermore, it proves advantageous if the corresponding flat lead connection element is implemented as a metal film or sheet, preferably with a thickness of 300 μm to 2000 μm, particularly preferably 500 μm to 1500 μm. As a result, the DC voltage connection device has low inductance.

[0012] Furthermore, it is advantageous if the DC voltage connection device has a through-hole disposed outside the housing element, which extends through the DC voltage connection device in the normal direction relative to the portion of the connection section of the first flat lead connection element disposed outside the housing element. As a result, the power semiconductor module, and in particular the DC voltage connection device, can be easily connected to the heat sink or base plate by screw connection.

[0013] In this case, it proves advantageous if the DC voltage connection device is arranged on a heat sink or base plate and connected to the heat sink or base plate by means of screws extending through the through-hole. As a result, the power semiconductor module, and in particular the DC voltage connection device, is reliably connected to the heat sink or to the base plate.

[0014] Furthermore, the objective is achieved by a method according to the invention for manufacturing a power semiconductor module, wherein a connection segment of a second flat lead connector is disposed on a plastic element such that a portion of the plastic element is disposed between the connection segment of the first flat lead connector and the second flat lead connector, the method comprising the following steps:

[0015] a) Provides a substrate, a power semiconductor component, a housing element, and a second flat lead connection element, wherein the substrate has a non-conductive insulating layer and a metal layer, the metal layer being disposed on the insulating layer and structured to form conductive traces; the power semiconductor component is disposed on the metal layer and conductively connected to the metal layer.

[0016] (b) Provide a flat lead connector having a first flat lead connector element, the first flat lead connector element being encapsulated by and bonded to a plastic element of the flat lead connector, wherein a connecting section of the first flat lead connector element protrudes from the plastic element.

[0017] c) By arranging the connecting section of the second flat lead connector on the plastic element, such that a portion of the plastic element is positioned between the connecting sections of the first flat lead connector and the second flat lead connector, a DC voltage connection device is formed.

[0018] d) Bonding the DC voltage connection device to the housing element material such that at least a portion of the connection section of the first flat lead connection element and at least a portion of the connection section of the second flat lead connection element are disposed outside the housing element.

[0019] e) Conductively connect the first flat lead connection element and the second flat lead connection element to the structured metal layer such that during operation of the power semiconductor module, the first flat lead connection element has a first polarity and the second flat lead connection element has a second polarity.

[0020] Furthermore, the objective is achieved by a method according to the invention for manufacturing a power semiconductor module, wherein the connection segment of the second flat lead connector is at least partially enclosed by a plastic element and bonded to the plastic element material, such that a portion of the plastic element is disposed between the connection segments of the first flat lead connector and the second flat lead connector, the method comprising the following steps:

[0021] a) Provides a substrate, a power semiconductor component, and a housing element, the substrate having a non-conductive insulating layer and a metal layer, the metal layer being disposed on the insulating layer and structured to form conductive traces; the power semiconductor component being disposed on the metal layer and conductively connected to the metal layer.

[0022] (b) Provide a DC voltage connection device having a flat lead connection device and a second flat lead connection element, wherein the flat lead connection device has a first flat lead connection element encapsulated and bonded to a plastic element material by a plastic element of the flat lead connection device, wherein a connection section of the first flat lead connection element protrudes from the plastic element, and wherein a connection section of the second flat lead connection element is at least partially encapsulated and bonded to a plastic element material by the plastic element, such that a portion of the plastic element is disposed between the connection sections of the first and second flat lead connection elements.

[0023] c) Bonding the DC voltage connection device to the housing element material such that at least a portion of the connection segment of the first flat lead connection element and at least a portion of the connection segment of the second flat lead connection element are disposed outside the housing element.

[0024] d) Conductively connect the first flat lead connection element and the second flat lead connection element to the structured metal layer such that during operation of the power semiconductor module, the first flat lead connection element has a first polarity and the second flat lead connection element has a second polarity.

[0025] Advantageous embodiments of this method are similar to, and vice versa, advantageous embodiments of power semiconductor modules.

[0026] Furthermore, it has proven advantageous to have a power electronics arrangement comprising a power semiconductor module according to the invention and including a DC voltage bus system having a first flat lead and a second flat lead and a non-conductive insulating layer disposed between the first flat lead and the second flat lead, wherein the DC voltage bus system is conductively connected to a DC voltage connection device by soldering.

[0027] In this case, it proves advantageous if the DC voltage connection device has a through-hole arranged outside the housing element, and the through-hole extends through the DC voltage connection device in the normal direction of the portion of the connection segment of the first flat lead connection element arranged outside the housing element, and a non-conductive insulating sleeve is arranged between the screw and the DC voltage connection device, wherein the insulating sleeve is supported on the plastic element of the flat lead connection device.

[0028] Furthermore, it has proven advantageous to have a power electronics arrangement comprising a power semiconductor module according to the invention and a DC voltage bus system, wherein the DC voltage connection device of the power semiconductor module is arranged on a heat sink or base plate and connected to the heat sink or base plate by screws extending through through-holes, the DC voltage bus system having a first flat lead and a second flat lead and a non-conductive insulating layer disposed between the first flat lead and the second flat lead, wherein the first flat lead has a first flat lead connection portion and the second flat lead has a second flat lead connection portion, wherein the first flat lead connection portion is in conductive contact with the connection portion of the first flat lead connection element by means of screw connection, and the second flat lead connection portion is in conductive contact with the connection portion of the second flat lead connection element, the screw connection being achieved by means of screws, and pressing the first flat lead connection against the connection portion of the first flat lead connection element, and pressing the second flat lead connection against the connection portion of the second flat lead connection element.

[0029] In this case, it proves advantageous to place a non-conductive insulating sleeve between the screw and the DC voltage connection device, wherein the insulating sleeve is supported on the second flat lead connection.

[0030] Therefore, the power semiconductor module according to the present invention can be electrically connected to the DC voltage bus system through both soldering and screw connections, which achieves a high degree of flexibility in the electrical connection of the power semiconductor module. Attached Figure Description

[0031] An exemplary embodiment of the invention is explained below with reference to the accompanying drawings, in which:

[0032] Figure 1 A perspective view of three power semiconductor modules according to the invention arranged adjacent to each other on a heat sink is shown, wherein the foremost power semiconductor module shown in the view is electrically connected to the DC voltage bus system by soldering.

[0033] Figure 2 A substrate for a power semiconductor module according to the present invention is shown.

[0034] Figure 3 A perspective view of a flat lead connection device for a power semiconductor module according to the present invention is shown.

[0035] Figure 4 A perspective view of a DC voltage connection device for a power semiconductor module according to the present invention is shown.

[0036] Figure 5 A perspective view of a connection device for a power semiconductor module according to the present invention is shown, the connection device having a DC voltage connection device and a housing element of the power semiconductor module according to the present invention.

[0037] Figure 6 A perspective view of three power semiconductor modules according to the invention arranged adjacent to each other on a heat sink is shown, wherein the foremost power semiconductor module shown in the view is electrically connected to the DC voltage bus system by screws. Detailed Implementation

[0038] Figure 1 A perspective view of three power semiconductor modules 1 according to the invention arranged adjacent to each other on a heat sink 11 is shown, wherein the power semiconductor module 1 shown at the front is electrically contacted with the DC voltage bus system 14 by soldering. Figure 2 The substrate 5 of the power semiconductor module 1 is shown. Figure 3 A perspective view of the flat lead wire connector 9 is shown, and Figure 4 A perspective view of the DC voltage connection device 3 of the power semiconductor module 1 is shown. Figure 5 A perspective view of a connection device 31 for a power semiconductor module 1 according to the present invention is shown, the connection device 31 having a DC voltage connection device 3 and a housing element 2. Figure 6A perspective view of three power semiconductor modules 1 according to the invention arranged adjacent to each other on a heat sink 11 is shown, wherein the power semiconductor module 1 shown in the foremost position in the view is electrically connected to the DC voltage bus system 24 by screws.

[0039] The power semiconductor module 1 according to the present invention has a substrate 5 having a non-conductive insulating layer 5a and a metal layer 5b disposed on the insulating layer 5a, the metal layer 5b being structured to form conductor traces 5b'. Preferably, the substrate 5 has another conductive, preferably unstructured, metal layer 5c, wherein the insulating layer 5a is disposed between the metal layer 5b and the other metal layer 5c. The insulating layer 5a can be implemented as, for example, a ceramic plate. The substrate 5 can be implemented as, for example, a direct copper bond substrate (DCB substrate), an active metal brazing substrate (AMB substrate), or an insulating metal substrate (IMS).

[0040] The power semiconductor module 1 also includes a power semiconductor component 6 disposed on and conductively connected to the metal layer 5b. The power semiconductor component 6 is preferably connected to the metal layer 5b in conductive contact by soldering or sintering. The corresponding power semiconductor component 6 is preferably in the form of a power semiconductor switch or a diode. In this case, the power semiconductor switch 6 is typically in the form of a transistor, such as an IGBT (Insulated Gate Bipolar Transistor) or a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), or in the form of a thyristor.

[0041] It should be noted that the power semiconductor components 6, on their side facing away from the substrate 5, are electrically connected to each other and to the conductor traces 5b' of the substrate 5, according to a desired circuit (e.g., a half-bridge circuit intended to be implemented by the power semiconductor module 1), via, for example, bonding wires and / or conductive film composites. For clarity, Figure 1 and Figure 6 These electrical connections are not shown in the document.

[0042] The power semiconductor module 1 also has a housing element 2 and a DC voltage connection device 3 (see Figure 4 The DC voltage connection device 3 has a flat lead connection device 8 (see...). Figure 3 The first flat lead connector 7 is encapsulated by and bonded to the plastic element 4 of the flat lead connector 8. The first flat lead connector 7 has a first flat lead connector 7, which is encapsulated by and bonded to the plastic element 4. A connecting section 7a of the first flat lead connector 7 protrudes from the plastic element 4. Figure 3The flat lead connection device 8, as illustrated in the example, forms a structural unit. Preferably, the first flat lead connection element 7 is bonded to the plastic element 4 material by injection molding technology, specifically, the first flat lead connection element 7 is injection molded into the plastic element 4, and the first flat lead connection element 7 is bonded to the plastic element 4 material. The housing element 2 preferably extends laterally around the substrate 5.

[0043] In the context of this exemplary embodiment, such as Figure 1 and Figure 4 As illustrated in the example, the connecting segment 9a of the second flat lead connector 9 is arranged on the plastic element 4, such that a portion 4a of the plastic element 4 is arranged between the connecting segment 9a of the first flat lead connector 7 and the second flat lead connector 9.

[0044] Alternatively, the connecting segment 9a of the second flat lead connector 9 can be at least partially enclosed by and bonded to the plastic element 4, such that a portion 4a of the plastic element 4 is arranged between the connecting segment 9a of the first flat lead connector 7 and the second flat lead connector 9. In this case, the DC voltage connection device 3 forms a structural unit. Preferably, the second flat lead connector 9 is bonded to the plastic element 4 material by injection molding, specifically by injection molding the second flat lead connector 9 into the plastic element 4, thus bonding the second flat lead connector 9 to the plastic element 4 material.

[0045] The thickness of the segment 4a, which is disposed between the first flat lead connector 7 and the second flat lead connector 9, of the plastic element 4 is preferably 150 μm to 1000 μm, and particularly preferably 500 μm to 750 μm.

[0046] The plastic element 4 is preferably formed of polyphenylene sulfide or polybutylene terephthalate.

[0047] The first flat lead connection element 7 and the second flat lead connection element 9 are conductively connected to the structured metal layer 5b, and more precisely, in each case, are conductively connected to at least one conductor trace 5b' of the metal layer 5b. During operation of the power semiconductor module 1, the first flat lead connection element 7 has a first polarity, and the second flat lead connection element 9 has a second polarity. The first polarity can be positive, and the second polarity can be negative, or vice versa. The first flat lead connection element 7 is conductively connected to the metal layer 5b via at least one conductive first connection element 7b, and more precisely, to at least one conductor trace 5b' of the metal layer 5b. The second flat lead connection element 9 is conductively connected to the metal layer 5b via at least one conductive second connection element 9b, and more precisely, to at least one conductor trace 5b' of the metal layer 5b. The respective connection element 7b or 9b is preferably integrally implemented with its respective associated flat lead connection element 7 or 9. The respective connection element 7b or 9b is preferably in conductive contact with the metal layer 5b by welding, brazing, bonding, or sintering. In the context of this exemplary embodiment, the power semiconductor module 1 has a third flat lead connection element 30 that is conductively connected to the metal layer 5b and has alternating polarity during operation of the power semiconductor module 1.

[0048] The corresponding flat lead connectors 7, 9 or 30 are preferably implemented as metal films or metal sheets with a thickness of 300 μm to 2000 μm, particularly 500 μm to 1500 μm.

[0049] The DC voltage connection device 3 is materially bonded to the housing element 4, wherein at least a portion 7a' of the connection segment 7a of the first flat lead connection element 7 and at least a portion 9a' of the connection segment 9a of the second flat lead connection element 9 are arranged outside the housing element 2.

[0050] Since the flat lead connection device 8 or the DC voltage connection device 3 forms a structural unit, and the DC voltage connection device 3 is bonded to the housing element 4 material, the power semiconductor module 1 can be produced efficiently.

[0051] The housing element 2 is preferably made of plastic, particularly polyphenylene sulfide or polybutylene terephthalate, wherein the DC voltage connection device 3 is preferably bonded to the material of the housing element 2 by injection molding, particularly by injection molding the DC voltage connection device 3 into the housing element 2, and the DC voltage connection device is bonded to the material of the housing element 2.

[0052] Preferably, the DC voltage connection device 3 is bonded to the material of the housing element 2 by means of the plastic element 4 and / or the second flat lead connection element 9 being bonded to the material of the housing element 2.

[0053] The DC voltage connection device 3 preferably has a through-hole 10 disposed outside the housing element 2, which extends through the DC voltage connection device 3 in the normal direction N of the portion 7a' disposed outside the housing element 2 relative to the connection section 7a of the first flat lead connection element 7. The DC voltage connection device 3 is preferably disposed on the heat sink 11 or the base plate and connected to the heat sink 11 or the base plate by means of a screw 12 extending through the through-hole 10. In this case, the substrate 5 is preferably thermally connected to the heat sink 11 or the base plate on the side of the substrate opposite to the power semiconductor assembly 6. The base plate can be implemented as, for example, a metal plate for thermally connecting the substrate 5 to the heat sink. The heat sink 11 preferably has cooling fins or cooling pillars 11a.

[0054] Figure 1 An example is shown of a power electronics arrangement 40, which includes a power semiconductor module 1 and a DC voltage bus system 14 having a first flat lead 14a and a second flat lead 14b, and a non-conductive insulating layer 14c disposed between the first flat lead 14a and the second flat lead 14b. The DC voltage bus system 14 is conductively connected to a DC voltage connection device 3 by soldering. Preferably, a non-conductive insulating sleeve 15 is disposed between a screw 12 and the DC voltage connection device 3, wherein the insulating sleeve 15 is supported on a plastic element 4 of the flat lead connection device 8.

[0055] Figure 6 Another power electronics arrangement 41 is illustrated, which includes a power semiconductor module 1 and a DC voltage bus system 24 having a first flat lead 24a and a second flat lead 24b, and a non-conductive insulating layer 24c disposed between the first flat lead 24a and the second flat lead 24b. The first flat lead 24a has a first flat lead connection portion 24a', and the second flat lead 24b has a second flat lead connection portion 24b'. The first flat lead connection portion 24a' is in conductive contact with a connection segment 7a of a first flat lead connecting element 7, and the second flat lead connection portion 24b' is in conductive contact with a connection segment 9a of a second flat lead connecting element 9, achieved by means of a screw 12, which presses the first flat lead connection portion 24a' against the connection segment 7a of the first flat lead connecting element 7 and the second flat lead connection portion 24b' against the connection segment 9a of the second flat lead connecting element 9. Preferably, a non-conductive insulating sleeve 25 is arranged between the screw 12 and the DC voltage connection device 3, wherein the insulating sleeve 25 is supported on the second flat lead connection portion 24b'.

[0056] The following describes a method for producing a power semiconductor module 1 according to the present invention, wherein a connecting segment 9a of a second flat lead connecting element 9 is arranged on a plastic element 4, such that a portion 4a of the plastic element 4 is arranged between a first flat lead connecting element 7 and a connecting segment 9a of the second flat lead connecting element 9.

[0057] The first method step a) involves providing a substrate 5, a power semiconductor component 6, a housing element 2, and a second flat lead connection element 9. The substrate 5 has a non-conductive insulating layer 5a and a metal layer 5b disposed on the insulating layer 5a. The metal layer 5b is structured to form a conductor trace 5b'. The power semiconductor component 6 is disposed on the metal layer 5b and is conductively connected to the metal layer 5b.

[0058] Another method, step b), involves providing a flat lead wire connection device 8 (see...). Figure 3 The flat lead connector 8 has a first flat lead connector 7, which is encapsulated and bonded to the plastic element 4 of the flat lead connector 8, wherein the connecting section 7a of the first flat lead connector 7 protrudes from the plastic element 4. Therefore, the flat lead connector 8 forms a structural unit.

[0059] Another method, step c), involves arranging a connecting segment 9a of the second flat lead connecting element 9 on the plastic element 4, such that a portion 4a of the plastic element 4 is positioned between the first flat lead connecting element 7 and the connecting segment 9a of the second flat lead connecting element 9, thereby forming a DC voltage connection device 3 (see [link to original text]). Figure 4 ).

[0060] Another method step d) involves bonding the DC voltage connection device 3 to the housing element 2 material such that at least a portion 7a' of the connection segment 7a of the first flat lead connection element 7 and at least a portion 9a' of the connection segment 9a of the second flat lead connection element 9 are arranged outside the housing element 2. As a result of method step d), a Figure 5 The connecting device 31 is shown as an example.

[0061] Another method step e) involves conductively connecting a first flat lead connection element 7 and a second flat lead connection element 9 to a structured metal layer 5a, for example by brazing, sintering, fusion welding, or bonding, such that during operation of the power semiconductor module 1, the first flat lead connection element 7 has a first polarity and the second flat lead connection element 9 has a second polarity. For this purpose, the at least one conductive first connection element 7b and the at least one conductive second connection element 9b are correspondingly conductively connected to the metal layer 5b.

[0062] The following describes another method according to the invention for producing a power semiconductor module 1 according to the invention, wherein the connection segment 9a of the second flat lead connector 9 is at least partially enclosed by a plastic element and bonded to the plastic element material, such that a portion 4a of the plastic element 4 is arranged between the first flat lead connector 7 and the connection segment 9a of the second flat lead connector 9.

[0063] The first method step a) involves providing a substrate 5, a power semiconductor component 6, and a housing element 2. The substrate 5 has a non-conductive insulating layer 5a and a metal layer 5b disposed on the insulating layer 5a. The metal layer 5b is structured to form conductor traces 5b'. The power semiconductor component 6 is disposed on the metal layer 5b and is conductively connected to the metal layer 5b.

[0064] Another method, step b), involves providing a DC voltage connection device 3 (see...). Figure 4 The DC voltage connection device 3 has a flat lead connection device 8 and a second flat lead connection element 9. The flat lead connection device 8 has a first flat lead connection element 7, which is enclosed and bonded to the plastic element 4 by the plastic element 8. A connecting segment 7a of the first flat lead connection element 7 protrudes from the plastic element 4. A connecting segment 9a of the second flat lead connection element 9 is at least partially enclosed and bonded to the plastic element material, such that a portion 4a of the plastic element 4 is arranged between the first flat lead connection element 7 and the connecting segment 9a of the second flat lead connection element 9. Therefore, the DC voltage connection device 3 forms a structural unit.

[0065] Another method step c) involves bonding the DC voltage connection device 3 to the housing element 2 material such that at least a portion 7a' of the connection segment 7a of the first flat lead connection element 7 and at least a portion 9a' of the connection segment 9a of the second flat lead connection element 9 are arranged outside the housing element 2. As a result of method step c), a Figure 5 The connecting device 31 is shown as an example.

[0066] Another method, step d), involves conductively connecting a first flat lead connection element 7 and a second flat lead connection element 9 to a structured metal layer 5a, for example by brazing, sintering, fusion welding, or bonding, such that during operation of the power semiconductor module 1, the first flat lead connection element 7 has a first polarity and the second flat lead connection element 9 has a second polarity. For this purpose, the at least one conductive first connection element 7b and the at least one conductive second connection element 9b are correspondingly conductively connected to the metal layer 5b.

Claims

1. A power semiconductor module, comprising a substrate (5) having a non-conductive insulating layer (5a) and a metal layer (5b), the metal layer (5b) being disposed on the non-conductive insulating layer (5a) and structured to form conductor traces (5b'); comprising a power semiconductor component (6) disposed on the metal layer (5b) and conductively connected to the metal layer (5b); comprising a housing element (2); and comprising a DC voltage connection device (3) having a flat lead connection device (8) and a second flat lead connection element (9), wherein, The flat lead connector (8) has a first flat lead connector element (7), which is enclosed by and bonded to the plastic element (4) of the flat lead connector (8), wherein a first connecting segment (7a) of the first flat lead connector element (7) protrudes from the plastic element (4), and a second connecting segment (9a) of the second flat lead connector element (9) is disposed on the plastic element (4), or is at least partially enclosed by and bonded to the plastic element material, such that a portion (4a) of the plastic element (4) is disposed between the first flat lead connector element (7) and the second flat lead connector element (9). Between the second connection segments (9a), wherein the first flat lead connection element (7) and the second flat lead connection element (9) are electrically connected to the structured metal layer (5b), wherein during operation of the power semiconductor module (1), the first flat lead connection element (7) has a first polarity and the second flat lead connection element (9) has a second polarity, wherein the DC voltage connection device (3) is materially bonded to the housing element (2), wherein at least a portion (7a') of the first connection segment (7a) of the first flat lead connection element (7) and at least a portion (9a') of the second connection segment (9a) of the second flat lead connection element (9) are arranged outside the housing element (2).

2. The power semiconductor module according to claim 1, characterized in that, The first flat lead connecting element (7) is bonded to the plastic element (4) material by injection molding technology.

3. The power semiconductor module according to any one of the preceding claims, characterized in that, The housing element (2) is formed of plastic and is bonded to the housing element (2) material by injection molding through the DC voltage connection device (3).

4. The power semiconductor module according to any one of claims 1-2, characterized in that, The DC voltage connection device (3) is bonded to the material of the housing element (2) by means of the plastic element (4) and / or the second flat lead connection element (9).

5. The power semiconductor module according to any one of claims 1-2, characterized in that, The housing element (2) extends laterally around the substrate (5).

6. The power semiconductor module according to any one of claims 1-2, characterized in that, The plastic element (4) is arranged between the first flat lead connector (7) and the second connecting segment (9a) of the second flat lead connector (9), and the segment (4a) has a thickness of 150 μm to 1000 μm.

7. The power semiconductor module according to any one of claims 1-2, characterized in that, The corresponding flat lead connection elements (7, 9) are implemented as metal films or metal sheets.

8. The power semiconductor module according to any one of claims 1-2, characterized in that, The DC voltage connection device (3) has a through hole (10) disposed outside the housing element (2), the through hole extending through the DC voltage connection device (3) in the normal direction (N) of at least a portion (7a') of the first connection segment (7a) of the first flat lead connection element (7) disposed outside the housing element (2).

9. The power semiconductor module according to claim 8, characterized in that, The DC voltage connection device (3) is arranged on the heat sink (11) or the base plate and is connected to the heat sink (11) or the base plate by a screw (12) extending through the through hole (10).

10. The power semiconductor module according to claim 2, characterized in that, The first flat lead connector (7) is injection molded into the plastic element (4), and the first flat lead connector (7) is bonded to the plastic element (4) material.

11. The power semiconductor module according to claim 3, characterized in that, The DC voltage connection device (3) is injection molded into the housing element (2), and the DC voltage connection device (3) is bonded to the material of the housing element (2).

12. The power semiconductor module according to claim 6, characterized in that, The thickness ranges from 500 μm to 750 μm.

13. The power semiconductor module according to claim 7, characterized in that, The corresponding flat lead connectors (7, 9) have a thickness of 300 μm to 2000 μm.

14. The power semiconductor module according to claim 7, characterized in that, The corresponding flat lead connectors (7, 9) have a thickness of 500 μm to 1500 μm.

15. A method for producing a power semiconductor module according to any one of claims 1 to 14, wherein, The second connecting segment (9a) of the second flat lead connector (9) is disposed on the plastic element (4), such that a portion (4a) of the plastic element (4) is disposed between the first flat lead connector (7) and the second connecting segment (9a) of the second flat lead connector (9). The method includes the following steps: a) Provides a substrate (5), a power semiconductor assembly (6), a housing element (2), and a second flat lead connection element (9), wherein the substrate (5) has a non-conductive insulating layer (5a) and a metal layer (5b), the metal layer (5b) being disposed on the non-conductive insulating layer (5a) and structured to form a conductor trace (5b'), and the power semiconductor assembly (6) being disposed on the metal layer (5b) and conductively connected to the metal layer (5b). b) Provides a flat lead connector (8) having a first flat lead connector (7) encapsulated and bonded to the plastic element (4) of the flat lead connector (8), wherein a first connecting segment (7a) of the first flat lead connector (7) protrudes from the plastic element (4). c) By arranging the second connecting segment (9a) of the second flat lead connecting element (9) on the plastic element (4), such that a portion (4a) of the plastic element (4) is arranged between the first flat lead connecting element (7) and the second connecting segment (9a) of the second flat lead connecting element (9), a DC voltage connection device (3) is formed. d) The DC voltage connection device (3) is combined with the housing element (2) material such that at least one portion (7a') of the first connection segment (7a) of the first flat lead connection element (7) and at least one portion (9a') of the second connection segment (9a) of the second flat lead connection element (9) are arranged outside the housing element (2). e) Conductively connect the first flat lead connection element (7) and the second flat lead connection element (9) to the structured metal layer (5b) such that during operation of the power semiconductor module (1), the first flat lead connection element (7) has a first polarity and the second flat lead connection element (9) has a second polarity.

16. A method for producing a power semiconductor module according to any one of claims 1 to 14, wherein, The second connecting segment (9a) of the second flat lead connector (9) is at least partially enclosed by and bonded to the plastic element material, such that a portion (4a) of the plastic element (4) is disposed between the first flat lead connector (7) and the second connecting segment (9a) of the second flat lead connector (9), the method comprising the following steps: a) A substrate (5), a power semiconductor component (6), and a housing element (2) are provided. The substrate (5) has a non-conductive insulating layer (5a) and a metal layer (5b). The metal layer (5b) is disposed on the non-conductive insulating layer (5a) and structured to form conductor traces (5b'). The power semiconductor component (6) is disposed on the metal layer (5b) and is conductively connected to the metal layer (5b). b) Provide a DC voltage connection device (3) having a flat lead connection device (8) and a second flat lead connection element (9), wherein the flat lead connection device (8) has a first flat lead connection element (7) which is enclosed by and bonded to the plastic element (4) material of the flat lead connection device (8), wherein a first connection segment (7a) of the first flat lead connection element (7) protrudes from the plastic element (4), wherein a second connection segment (9a) of the second flat lead connection element (9) is at least partially enclosed by and bonded to the plastic element (4) material, such that a portion (4a) of the plastic element (4) is arranged between the first flat lead connection element (7) and the second connection segment (9a) of the second flat lead connection element (9). c) The DC voltage connection device (3) is combined with the housing element (2) material such that at least one portion (7a') of the first connection segment (7a) of the first flat lead connection element (7) and at least one portion (9a') of the second connection segment (9a) of the second flat lead connection element (9) are arranged outside the housing element (2). d) Conductively connect the first flat lead connection element (7) and the second flat lead connection element (9) to the structured metal layer (5b) such that during operation of the power semiconductor module (1), the first flat lead connection element (7) has a first polarity and the second flat lead connection element (9) has a second polarity.

17. A power electronic arrangement comprising a power semiconductor module according to any one of claims 1 to 14 and comprising a DC voltage bus system (14) having a first flat lead (14a) and a second flat lead (14b) and a non-conductive insulating layer (14c) disposed between the first flat lead (14a) and the second flat lead (14b), wherein the DC voltage bus system (14) is conductively connected to the DC voltage connection device (3) by soldering.

18. The power electronics arrangement according to claim 17, wherein, The DC voltage connection device (3) has a through hole (10) disposed outside the housing element (2), the through hole extending through the DC voltage connection device (3) in the normal direction (N) of the portion (7a') of the first connection segment (7a) of the first flat lead connection element (7) disposed outside the housing element (2), the DC voltage connection device (3) is disposed on a heat sink (11) or a base plate, and is connected to the heat sink (11) or the base plate by a screw (12) extending through the through hole (10), and a non-conductive insulating sleeve (15) is disposed between the screw (12) and the DC voltage connection device (3), wherein the insulating sleeve (15) is supported on the plastic element (4) of the flat lead connection device (8).

19. A power electronic arrangement comprising a power semiconductor module (1) according to claim 9, and comprising a DC voltage bus system (24) having a first flat lead (24a) and a second flat lead (24b) and a non-conductive insulating layer (24c) disposed between the first flat lead (24a) and the second flat lead (24b), wherein the first flat lead (24a) has a first flat lead connection portion (24A') and the second flat lead (24b) has a second flat lead connection portion (24b'), wherein, The first flat lead connector (24a') is electrically contacted with the first connecting segment (7a) of the first flat lead connector (7) by means of a screw connection, and the second flat lead connector (24b') is electrically contacted with the second connecting segment (9a) of the second flat lead connector (9). The screw connection is achieved by means of the screw (12), and the first flat lead connector (24a') is pressed against the first connecting segment (7a) of the first flat lead connector (7), and the second flat lead connector (24b') is pressed against the second connecting segment (9a) of the second flat lead connector (9).

20. The power electronics arrangement according to claim 19, wherein, A non-conductive insulating sleeve (25) is arranged between the screw (12) and the DC voltage connection device (3), wherein the insulating sleeve (25) is supported on the second flat lead connection (24b').

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