Semiconductor device and method for manufacturing semiconductor device

Abstract

Embodiments provide a semiconductor device and a manufacturing method thereof, which can achieve good connection of electrodes of a bonded substrate to each other. The semiconductor device of the embodiments has a first substrate having a first electrode connected to a first circuit inside the substrate at a first bonding surface, and a second substrate having a second electrode connected to a second circuit inside the substrate at a second bonding surface. The semiconductor device of the embodiments connects the first electrode of the first substrate and the second electrode of the second substrate by bonding the first bonding surface and the second bonding surface. The semiconductor device of the embodiments has at least one auxiliary electrode connected to the first electrode or the second electrode inside the substrate and reaching the first bonding surface or the second bonding surface, at least one of a periphery of the first electrode at the first bonding surface of the first substrate and a periphery of the second electrode at the second bonding surface of the second substrate. The first electrode and the second electrode are connected by direct connection portions to each other and auxiliary connection portions via the auxiliary electrode.

Claims

1. A semiconductor device comprising: A first substrate, having a first electrode on a first bonding surface that is connected to a first circuit on the inner side of the first substrate; and The second substrate has a second electrode on its second bonding surface that is connected to a second circuit inside the second substrate. The first bonding surface and the second bonding surface are bonded together to connect the first electrode of the first substrate and the second electrode of the second substrate. At least one of the following is provided: around the first electrode at the first bonding surface of the first substrate and around the second electrode at the second bonding surface of the second substrate, there is at least one auxiliary electrode that is connected to the first electrode or the second electrode on the inner side of the first substrate or the inner side of the second substrate and reaches the first bonding surface or the second bonding surface. A plurality of adjacent second electrodes are formed on the second substrate, and the plurality of second electrodes are disposed at adjacent positions different from those of the first electrodes and the auxiliary electrodes disposed on the first substrate. The first electrode and the second electrode are connected by a direct connection to each other and an auxiliary connection via the auxiliary electrode.

2. A semiconductor device comprising: A first substrate, having a first electrode on a first bonding surface that is connected to a first circuit on the inner side of the first substrate; and The second substrate has a second electrode on its second bonding surface that is connected to a second circuit inside the second substrate. The first bonding surface and the second bonding surface are bonded together to make the first electrode of the first substrate and the second electrode of the second substrate conductive. At least one of the following is provided: around the first electrode at the first bonding surface of the first substrate and around the second electrode at the second bonding surface of the second substrate, there is at least one auxiliary electrode that is connected to the first electrode or the second electrode on the inner side of the first substrate or the inner side of the second substrate and protrudes from the first bonding surface or the second bonding surface. A plurality of adjacent second electrodes are formed on the second substrate, and the plurality of second electrodes are disposed at adjacent positions different from those of the first electrodes and the auxiliary electrodes disposed on the first substrate. The first electrode and the second electrode are connected by a direct connection to each other and an auxiliary connection via the auxiliary electrode.

3. The semiconductor device according to claim 2, wherein, The second electrode is connected to the side of the first electrode located near the first mating surface, and the second electrode is connected to the auxiliary electrode via the side of the auxiliary electrode located near the first mating surface.

4. The semiconductor device according to claim 1 or 2, wherein, A first insulating layer is disposed on the first substrate, the surface of which is the first bonding surface. A second insulating layer is disposed on the second substrate, the surface of which is the second bonding surface. A first electrode is disposed on the first insulating layer, and a second electrode is disposed on the second insulating layer. The auxiliary electrode is disposed on the first insulating layer or the second insulating layer. The auxiliary electrode is connected to the first electrode or the second electrode via a connecting pad disposed within the first insulating layer or the second insulating layer. The auxiliary electrode is not directly connected to the first circuit or the second circuit within the first insulating layer or the second insulating layer.

5. The semiconductor device according to claim 1 or 2, wherein, A gap is formed at the bonding surface of the first substrate and the second substrate.

6. The semiconductor device according to claim 1 or 2, wherein, One of the first substrate and the second substrate is a circuit substrate with CMOS circuitry, and the other is an array substrate with memory circuitry. The auxiliary electrode is formed on the circuit substrate.

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