Structure and fabrication method of pseudo-active region of MOS transistor
By forming field oxygen on the semiconductor substrate of the MOS transistor and setting up a parallel array of pseudo-active regions, the leakage path problem caused by pseudo-active regions is solved, better isolation effect is achieved, and leakage between MOS transistors is reduced.
CN115117148BActive Publication Date: 2026-07-17SHANGHAI HUALI INTEGRATED CIRCUIT CORP
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHANGHAI HUALI INTEGRATED CIRCUIT CORP
- Filing Date
- 2022-06-28
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
The pseudo-active region design of existing MOS transistors leads to leakage channels, affecting the leakage problem between MOS transistors with adjacent active regions.
Method used
A field oxygen is formed on the semiconductor substrate to isolate the active region, and multiple parallel array blocks of pseudo-active regions are arranged around it. The length of the pseudo-active region is shorter than that of the active region. The field oxygen is used to prevent the formation of leakage channels.
Benefits of technology
It effectively reduces leakage current between MOS transistors and achieves better isolation through the improved pseudo-active region structure, preventing the formation of leakage current channels.
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Smart Images
Figure CN115117148B_ABST
Abstract
This invention discloses a structure for a pseudo-active region of a MOS transistor, comprising multiple pseudo-active regions isolated by field oxides around the active region. Each pseudo-active region is strip-shaped, with its length parallel to that of the active region. The length of the pseudo-active region is less than that of the active region. Multiple pseudo-active region array blocks are arranged along the length of the active region. Along the width of the active region, the pseudo-active region array blocks are formed by alternating multiple pseudo-active regions and field oxides located between the pseudo-active regions. The multiple field oxides in the pseudo-active region array blocks prevent leakage paths formed through the pseudo-active regions from appearing around the active region, thereby reducing the leakage current of the MOS transistor. This invention also discloses a method for manufacturing the pseudo-active region of a MOS transistor. This invention prevents the pseudo-active regions themselves from forming leakage paths, thereby reducing the leakage current between MOS transistors in adjacent active regions.
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