Temperature control device, substrate processing device and pressure control method

Abstract

The present application provides a temperature control device capable of improving temperature control performance on a control object, a substrate processing device, and a pressure control method. The temperature control device includes: a supply pipe that supplies a heat medium to the control object; a return pipe that returns the heat medium from the control object; a pump that sends out the heat medium to the supply pipe; a pressure sensor that detects a pressure of the supply pipe connected immediately after the pump; and a control unit configured to control the temperature control device based on a difference between the pressure detected by the pressure sensor and a set value of a delivery pressure of the pump, to control the delivery pressure of the pump.

Description

Technical Field

[0001] This invention relates to a temperature control device, a substrate processing device, and a pressure control method. Background Technology

[0002] In a substrate processing apparatus, a pump circulates brine, which serves as a heat transfer medium, through a flow path within the mounting stage, thereby controlling the temperature. For example, one proposal suggests controlling the temperature regulating medium to vaporize within a cavity in the mounting stage, with the pressure within the cavity becoming a target pressure (Patent Document 1). Another proposal suggests pre-creating a reference table showing the coolant pressure corresponding to the wafer temperature, using this table during measurement to control the coolant pressure based on the wafer temperature drift (Patent Document 2). Furthermore, a temperature control system incorporating a high-temperature fluid source, a low-temperature fluid source, and a three-way valve has been proposed, along with controlling the refrigerant flow rate in the pump using the inverter's operating frequency (Patent Documents 3 and 4).

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: U.S. Patent Application Publication No. 2012 / 0016508

[0006] Patent Document 2: U.S. Patent Application Publication No. 2002 / 0048311

[0007] Patent Document 3: U.S. Patent Application Publication No. 2020 / 0051839

[0008] Patent Document 4: U.S. Patent Application Publication No. 2019 / 0355598 Summary of the Invention

[0009] The technical problem that the invention aims to solve

[0010] The present invention provides a temperature control device, a substrate processing device, and a pressure control method that can improve the temperature controllability of the controlled object.

[0011] Technical solutions for solving technical problems

[0012] One aspect of the temperature control device of the present invention includes: a supply pipe for supplying a heat medium to a controlled object; a return pipe for the heat medium to return from the controlled object; a pump for discharging the heat medium from the supply pipe; a sensor for detecting pressure of the supply pipe connected immediately after the pump; and a control unit configured to control the temperature control device based on the difference between the pressure detected by the pressure sensor and a set value of the pump's discharge pressure, thereby controlling the pump's discharge pressure.

[0013] Invention Effects

[0014] According to the present invention, the temperature controllability of the controlled object can be improved. Attached Figure Description

[0015] Figure 1 This is a schematic cross-sectional view illustrating an example of a substrate processing apparatus according to one embodiment of the present invention.

[0016] Figure 2 This is a diagram illustrating an example of the temperature control device in this embodiment.

[0017] Figure 3 This is a flowchart illustrating an example of the pressure control process in this embodiment.

[0018] Figure 4 This is a diagram illustrating an example of the temperature characteristics in the embodiment.

[0019] Figure 5 This is a graph representing one example of the temperature characteristics in the comparative examples.

[0020] Figure 6 This is a diagram illustrating an example of the temperature control device in Modification 1.

[0021] Figure 7 This is a diagram representing an example of the controlled object in Variation Example 2.

[0022] Figure 8 This is a diagram illustrating an example of the temperature control device in Modification 2.

[0023] Explanation of reference numerals in the attached figures

[0024] 1. 400 substrate processing device

[0025] 10. Main body of the device

[0026] 11 Control Devices

[0027] 12. 401 treatment container

[0028] 15. 406~409 flow path

[0029] 16a, 16b, 207, 229, 230, 249, 250, 272~275, 403, 404 piping

[0030] Temperature control devices 20, 20a, and 20b

[0031] 200 cycle section

[0032] 201 valve

[0033] 203 Temperature Sensor

[0034] 204-206 Check Valves

[0035] 220, 220a First Temperature Control Section

[0036] 222, 242 pumps

[0037] 225, 245 pressure sensors

[0038] 240, 240a Second Temperature Control Section

[0039] 240b Temperature Control Unit

[0040] 260 switching unit

[0041] 280 Control Department

[0042] 405, 405a flow control valve

[0043] 410 cooling plate

[0044] ESC electrostatic chuck

[0045] LE lower electrode

[0046] PD, 413 mounting stage

[0047] W chip. Detailed Implementation

[0048] Hereinafter, embodiments of the temperature control device, substrate processing device, and temperature control method of the present invention will be described in detail based on the accompanying drawings. Furthermore, the technology of the present invention is not limited to the following embodiments.

[0049] In the circulation of heat media, for example, the flow rates of the heat media on the high-temperature side and the low-temperature side may be switched for a platform or other device whose temperature is controlled, or the number of substrate processing devices whose temperature is controlled may be increased or decreased. In such cases, due to interference between valves, the pressure in the piping supplying the heat media fluctuates significantly, leading to a deterioration in circulation control. Consequently, the pump operation becomes unstable, and sometimes the temperature control performance of the controlled object deteriorates. Conversely, in pump circulation control, it is difficult to suppress the deterioration of circulation control performance in flow feedback control or control with a fixed inverter frequency for the pump. Furthermore, when switching the return-side piping using a check valve, differential pressure cannot be controlled, and both the high-temperature and low-temperature sides become open simultaneously, again resulting in a deterioration in temperature control performance. In such cases, excessive or insufficient liquid volume due to uneven liquid levels in the tanks on the high-temperature and low-temperature sides may cause alarm shutdowns, or liquid movement due to connecting pipes between the tanks on the high-temperature and low-temperature sides may cause excessive heat loss, leading to a deterioration in temperature control performance. Therefore, people expect to improve the temperature controllability of the controlled object by controlling the pressure on the pump's discharge side to be constant.

[0050] [Structure of Substrate Processing Device 1]

[0051] Figure 1 This is a schematic cross-sectional view illustrating an example of a substrate processing apparatus according to one embodiment of the present invention. The substrate processing apparatus 1 is, for example, a plasma etching apparatus having parallel flat plate electrodes. The substrate processing apparatus 1 has an apparatus body 10 and a control device 11. The apparatus body 10 is made of a material such as aluminum and has a processing container 12, which has, for example, a generally cylindrical shape. The inner wall surface of the processing container 12 is anodized. Furthermore, for safety reasons, the processing container 12 is grounded.

[0052] A generally cylindrical support portion 14, made of an insulating material such as quartz, is provided on the bottom of the processing container 12. The support portion 14 extends from the bottom of the processing container 12 in a vertical direction (e.g., toward the upper electrode 30) inside the processing container 12.

[0053] A stage PD is provided inside the processing container 12. The stage PD is supported by a support 14. A wafer W is held on the upper surface of the stage PD. The wafer W is an example of a temperature-controlled object. The stage PD has an electrostatic chuck ESC and a lower electrode LE. The lower electrode LE is made of a metal material such as aluminum and has a generally disc-shaped form. The electrostatic chuck ESC is disposed on the lower electrode LE. The lower electrode LE is an example of a heat exchange component that exchanges heat with the temperature-controlled object.

[0054] The electrostatic chuck (ESC) has a structure in which electrodes EL, which serve as conductive films, are disposed between a pair of insulating layers or a pair of insulating sheets. Electrodes EL are electrically connected to a DC power supply 17 via a switch SW. The ESC uses electrostatic power, such as Coulomb force generated by the DC voltage supplied from the DC power supply 17, to attract the wafer W to its upper surface. Thus, the ESC is able to hold the wafer W.

[0055] A heat transfer gas, such as He gas, is supplied to the electrostatic chuck ESC via piping 19. The heat transfer gas supplied via piping 19 is then supplied between the electrostatic chuck ESC and the wafer W. By adjusting the pressure of the heat transfer gas supplied between the electrostatic chuck ESC and the wafer W, the thermal conductivity between the electrostatic chuck ESC and the wafer W can be adjusted.

[0056] Additionally, a heater HT, serving as a heating element, is installed inside the electrostatic chuck ESC. The heater HT is connected to a heater power supply HP. By supplying electrical power to the heater HT from the heater power supply HP, the wafer W on the electrostatic chuck ESC can be heated via the electrostatic chuck ESC. The temperature of the wafer W placed on the electrostatic chuck ESC is adjusted using the lower electrode LE and the heater HT. Alternatively, the heater HT can also be positioned between the electrostatic chuck ESC and the lower electrode LE.

[0057] An edge ring ER is arranged around the electrostatic chuck ESC, surrounding the edge of the wafer W and the electrostatic chuck ESC. The edge ring ER is sometimes also called a focusing ring. By using the edge ring ER, the in-plane uniformity of the processing of the wafer W can be improved. The edge ring ER is made of a material such as quartz, appropriately selected according to the material of the film to be etched.

[0058] A flow path 15 is formed inside the lower electrode LE for the flow of an insulating fluid, i.e., a heat medium, such as Galden (registered trademark). The heat medium sometimes refers to brine. The flow path 15 is connected to a temperature control device 20 via pipes 16a and 16b. The temperature control device 20 controls the temperature of the heat medium flowing within the flow path 15 of the lower electrode LE. The heat medium, whose temperature is controlled by the temperature control device 20, is supplied to the flow path 15 of the lower electrode LE via pipe 16a. The heat medium flowing within the flow path 15 returns to the temperature control device 20 via pipe 16b.

[0059] The temperature control device 20 circulates the heat medium flowing within the flow path 15 of the lower electrode LE. Furthermore, the temperature control device 20 mixes a heat medium at a first temperature or a heat medium at a second temperature with the circulating heat medium and supplies this mixture into the flow path 15 of the lower electrode LE. By mixing the heat medium at the first temperature or the heat medium at the second temperature with the circulating heat medium and supplying it into the flow path 15 of the lower electrode LE, the temperature of the lower electrode LE is controlled to a set temperature. The first temperature is, for example, a temperature above room temperature, and the second temperature is, for example, a temperature below 0°C. Hereinafter, the heat medium at the first temperature will be referred to as the first heat medium, and the heat medium at the second temperature will be referred to as the second heat medium. The first heat medium and the second heat medium are fluids with different temperatures but the same material. The temperature control device 20 and the control device 11 are an example of a heat medium control device.

[0060] The lower surface of the lower electrode LE is electrically connected to a power supply tube 69 for supplying high-frequency electrical power to the lower electrode LE. The power supply tube 69 is made of metal. Furthermore, although in Figure 1 The diagram is omitted, but a lifting pin and its drive mechanism for transferring the wafer W on the electrostatic chuck ESC are arranged in the space between the lower electrode LE and the bottom of the processing container 12.

[0061] The power supply transistor 69 is connected to the first high-frequency power supply 64 via a matching converter 68. The first high-frequency power supply 64 generates high-frequency electrical power, i.e., high-frequency bias power, for attracting ions to the wafer W, for example, generating high-frequency bias power at frequencies of 400 kHz to 40.68 MHz, or in one example, 13.56 MHz. The matching converter 68 is a circuit used to match the output resistance of the first high-frequency power supply 64 with the input resistance on the load side (lower electrode LE). The high-frequency bias power generated by the first high-frequency power supply 64 is supplied to the lower electrode LE via the matching converter 68 and the power supply transistor 69.

[0062] An upper electrode 30 is positioned above and opposite the stage PD. A lower electrode LE is arranged approximately parallel to the upper electrode 30. Plasma is generated in the space between the upper electrode 30 and the lower electrode LE, and the generated plasma is used to perform an etching plasma treatment on the wafer W held on the upper surface of the electrostatic chuck ESC. The space between the upper electrode 30 and the lower electrode LE is the processing space PS.

[0063] The upper electrode 30 is supported on the upper part of the processing container 12 via an insulating shielding member 32, for example, made of quartz. The upper electrode 30 has an electrode plate 34 and an electrode support 36. The lower surface of the electrode plate 34 faces the processing space PS. A plurality of gas release ports 34a are formed on the electrode plate 34. The electrode plate 34 is made of, for example, a silicon-containing material.

[0064] The electrode support 36 is made of a conductive material such as aluminum and detachably supports the electrode plate 34 from above. The electrode support 36 may have a water-cooling structure (not shown). A diffusion chamber 36a is formed inside the electrode support 36. A plurality of gas flow ports 36b, communicating with the gas release port 34a of the electrode plate 34, extend downward from the diffusion chamber 36a (towards the stage PD). A gas inlet 36c is provided in the electrode support 36 for introducing processing gas into the diffusion chamber 36a, and a pipe 38 is connected to the gas inlet 36c.

[0065] Piping 38 is connected to gas source group 40 via valve group 42 and flow controller group 44. Gas source group 40 has multiple gas sources. Valve group 42 contains multiple valves, and flow controller group 44 contains multiple flow controllers, such as mass flow controllers. Each gas source in gas source group 40 is connected to piping 38 via a corresponding valve in valve group 42 and a corresponding flow controller in flow controller group 44.

[0066] Thus, the main body 10 can supply the processing gas from one or more gas sources selected from the gas source group 40 at individually adjusted flow rates to the diffusion chamber 36a within the electrode support 36. The processing gas supplied to the diffusion chamber 36a diffuses within the diffusion chamber 36a and is then sprayed into the processing space PS via various gas flow ports 36b and gas release ports 34a.

[0067] Electrode support 36 is connected to a second high-frequency power supply 62 via a matching adapter 66. The second high-frequency power supply 62 is a power source for generating high-frequency electrical power for plasma generation, for example, generating high-frequency electrical power with a frequency of 27–100 MHz, or 60 MHz in one example. The matching adapter 66 is a circuit used to match the output resistance of the second high-frequency power supply 62 with the input resistance on the load (upper electrode 30) side. The high-frequency electrical power generated by the second high-frequency power supply 62 is supplied to the upper electrode 30 via the matching adapter 66. Furthermore, the second high-frequency power supply 62 can also be connected to the lower electrode LE via the matching adapter 66.

[0068] A deposit shielding member 46, made of aluminum or the like coated with Y2O3 or quartz, is detachably provided on the inner wall of the processing container 12 and the outer side of the support portion 14. The deposit shielding member 46 prevents etching byproducts (waste) from adhering to the processing container 12 and the support portion 14.

[0069] An exhaust plate 48, made of aluminum or the like coated with Y2O3 or quartz, is provided between the outer wall of the support portion 14 and the inner wall of the processing container 12, and on the bottom side of the processing container 12 (the side where the support portion 14 is located). An exhaust port 12e is provided below the exhaust plate 48. The exhaust port 12e is connected to the exhaust device 50 via an exhaust pipe 52.

[0070] The exhaust device 50 has a vacuum pump such as a turbomolecular pump, which can reduce the pressure of the space inside the processing container 12 to the desired vacuum level. An opening 12g for feeding or discharging the wafer W is provided on the side wall of the processing container 12, and the opening 12g can be opened and closed by a gate 54.

[0071] The control device 11 includes a processor, a memory, and an input / output interface. The memory stores programs executed by the processor and schemes including conditions for each process. The processor executes the program read from the memory, and based on the scheme stored in the memory, controls various parts of the device body 10 via the input / output interface, thereby performing prescribed processes such as etching on the wafer W. The control device 11 is an example of a control unit.

[0072] [Structure of temperature control device 20]

[0073] Figure 2This diagram illustrates an example of the temperature control device in this embodiment. The temperature control device 20 includes a circulation section 200, a first temperature control section 220, and a second temperature control section 240. Furthermore, for example, the circulation section 200 is disposed on the same level as the level on which the processing container 12 is disposed, while the first temperature control section 220 and the second temperature control section 240 are disposed on a level lower than the circulation section 200.

[0074] The outlet side of valve 201 in circulation unit 200 is connected to piping 16a. Furthermore, pump 202, which circulates the hot medium flowing within flow path 15 of the lower electrode LE in circulation unit 200, is connected to piping 16b. Piping 16b at the outlet side of pump 202 is connected to the inlet side of valve 201 via check valve 206 at connection position A and piping 207. When pump 202 is operating, the pressure in piping 207 is lower than the pressure in piping 16b at the outlet side of pump 202; therefore, check valve 206 is open. Thus, the hot medium circulates in the path of pump 202, piping 16b, check valve 206, piping 207, valve 201, piping 16a, flow path 15, and piping 16b. Furthermore, piping 207 is an example of a third piping. Additionally, a temperature sensor 203 for detecting the temperature at the inlet side of flow path 15 is provided in piping 16a within circulation unit 200. In addition, the temperature sensor 203 can also be disposed outside the temperature control device 20. For example, the temperature sensor 203 can also be disposed directly below the lower electrode LE, for example at the connection between the pipe 16a and the flow path 15, or it can be disposed in the middle of the lower electrode LE and the temperature control device 20.

[0075] The first temperature control unit 220 is connected to pipe 16a via pipe 229, pipe 210, and valve 201. Furthermore, the first temperature control unit 220 is connected to pipe 16b via pipe 230, pipe 212, and check valve 204. Additionally, pipe 211, serving as a bypass pipe, connects the connection point B between pipes 229 and 210 and the connection point C between pipes 230 and 212. Furthermore, a pressure sensor 208 for monitoring is provided at connection point C.

[0076] In this embodiment, the first temperature control unit 220 controls the temperature of the first heat medium, which is on the high-temperature side. The first temperature control unit 220 mixes the temperature-controlled first heat medium with the heat medium circulating from pipe 207 to pipe 16a via pipe 229, pipe 210, and valve 201, and supplies it into the flow path 15 of the lower electrode LE. Furthermore, the temperature of the first heat medium can be set to, for example, 90°C. The pressure in pipes 210-212, 229, and 230 decreases due to the supply of the first heat medium into the flow path 15 of the lower electrode LE. Moreover, the heat medium discharged from the flow path 15 returns to the first temperature control unit 220 at connection point A of pipe 16b via pipes 212 and 230 through a check valve 204 that is partially open due to the pressure reduction. The piping system consisting of pipes 229, 210, and 16a is an example of a supply piping or a first supply piping. Furthermore, the piping consisting of piping 16b, piping 212, and piping 230 is an example of a return piping or a first return piping. Additionally, the piping consisting of piping 210-212, 229, and 230 is an example of a first piping.

[0077] In the first temperature control unit 220, a pump 222 supplies the heat medium in the storage tank 221 to the piping 229. Furthermore, a heat exchanger 223, a flow sensor 224, a pressure sensor 225, a temperature sensor 226, and a variable valve 227 are provided on the outlet side of the pump 222. That is, the heat exchanger 223, flow sensor 224, pressure sensor 225, temperature sensor 226, and variable valve 227 are located immediately after the pump 222. The heat exchanger 223 heats or cools the heat medium supplied to the piping 229 to a set temperature. The flow sensor 224 detects the flow rate of the heat medium supplied by the pump 222 at the outlet side of the piping 229. The pressure sensor 225 detects the pressure of the heat medium supplied by the pump 222 at the outlet side of the piping 229. The temperature sensor 226 detects the temperature of the heat medium supplied by the pump 222 at the outlet side of the piping 229. The variable valve 227, together with the variable valve 228 on the side of the return piping 230, regulates the pressure of the hot medium supplied by the pump 222 in the piping 229.

[0078] The second temperature control unit 240 is connected to pipe 16a via pipe 249, pipe 213, and valve 201. Furthermore, the second temperature control unit 240 is connected to pipe 16b via pipe 250, pipe 215, and check valve 205. Additionally, pipe 214, serving as a bypass pipe, connects the connection point D between pipes 249 and 213 and the connection point E between pipes 250 and 215. Furthermore, a pressure sensor 209 for monitoring is provided at connection point E.

[0079] In this embodiment, the second temperature control unit 240 controls the temperature of the second heat medium, which is on the low-temperature side. The second temperature control unit 240 mixes the temperature-controlled second heat medium with the heat medium circulating from pipe 207 to pipe 16a via pipes 249, 213, and valve 201, and supplies it into the flow path 15 of the lower electrode LE. Furthermore, the temperature of the second heat medium can be set to, for example, -10°C. The pressure in pipes 213-215, 249, and 250 decreases due to the supply of the second heat medium into the flow path 15 of the lower electrode LE. Moreover, the heat medium discharged from the flow path 15 returns to the second temperature control unit 240 at connection point A of pipe 16b via pipes 215 and 250 through a check valve 205 that is partially open due to the pressure reduction. The piping system consisting of pipes 249, 213, and 16a is an example of a supply piping or a second supply piping. Furthermore, the piping consisting of piping 16b, piping 215, and piping 250 is an example of a return piping or a second return piping. Additionally, the piping consisting of piping 213-215, 249, and 250 is an example of a second piping.

[0080] In the second temperature control unit 240, a pump 242 supplies the heat medium in the storage tank 241 to the piping 249. Furthermore, a heat exchanger 243, a flow sensor 244, a pressure sensor 245, a temperature sensor 246, and a variable valve 247 are provided on the outlet side of the pump 242. That is, the heat exchanger 243, flow sensor 244, pressure sensor 245, temperature sensor 246, and variable valve 247 are located immediately after the pump 242. The heat exchanger 243 heats or cools the heat medium supplied to the piping 249 to a set temperature. The flow sensor 244 detects the flow rate of the heat medium supplied by the pump 242 at the outlet side of the piping 249. The pressure sensor 245 detects the pressure of the heat medium supplied by the pump 242 at the outlet side of the piping 249. The temperature sensor 246 detects the temperature of the heat medium supplied by the pump 242 at the outlet side of the piping 249. The variable valve 247, together with the variable valve 248 on the side of the return piping 250, regulates the pressure of the hot medium supplied by the pump 242 in the piping 249.

[0081] The liquid storage tank 221 of the first temperature control unit 220 and the liquid storage tank 241 of the second temperature control unit 240 are connected by pipes 251 and 252. Pipes 251 and 252 are examples of connecting pipes used to adjust the liquid levels in the liquid storage tank 221 (for storing the first heat medium) and the liquid storage tank 241 (for storing the second heat medium). Pipe 251 is used for the movement of gas (air or evaporating heat medium, etc.) between the liquid storage tanks 221 and 241. Pipe 252 is used for the movement of liquid (heat medium) between the liquid storage tanks 221 and 241. This prevents leakage of the heat medium.

[0082] The opening degrees of valves 201, 227, 228, 247, and 248, the delivery pressures of pumps 202, 222, and 242, and the temperatures in heat exchangers 223 and 243 are controlled separately by control device 11. Furthermore, pumps 202, 222, and 242 are pumps whose delivery pressures can be controlled according to the inverter frequency. Additionally, the opening degree of valve 201 can be adjusted, for example, between +100% and -100%. When valve 201 is 0% open, all the heat medium from pipe 207 flows into pipe 16a, and the heat medium from pipes 210 and 213 does not flow into pipe 16a. Similarly, when valve 201 is 100% open, all the heat medium from pipe 210 flows into pipe 16a, and the heat medium from pipes 207 and 213 does not flow into pipe 16a. On the other hand, when valve 201 is open to -100%, all the heat medium from pipe 213 flows to pipe 16a, while the heat medium from pipes 207 and 210 does not flow into pipe 16a.

[0083] That is, when it is desired to mix the first heat medium on the high-temperature side to increase the temperature of the circulating heat medium, the opening of valve 201 is changed from 0% to the positive side. On the other hand, when it is desired to mix the second heat medium on the low-temperature side to decrease the temperature of the circulating heat medium, the opening of valve 201 is changed from 0% to the negative side. For example, when plasma is ignited in the processing space PS for plasma processing, heat is also input from the plasma to the lower electrode LE. Therefore, in order to keep the temperature of the lower electrode LE constant, for example, the opening of valve 201 is set to -10%, the flow rate of the heat medium circulating in pipe 207 is set to 90%, and the second heat medium on the low-temperature side of pipe 213 is mixed at 10%.

[0084] [Pressure Control Methods]

[0085] Next, the pressure control method of this embodiment will be described. Figure 3 This is a flowchart illustrating an example of the pressure control process in this embodiment.

[0086] Control device 11 operates pump 202 of circulation unit 200 to initiate circulation of the hot medium in the path of piping 16b, check valve 206, piping 207, valve 201, piping 16a, flow path 15, and piping 16b. Based on the temperature detected by temperature sensor 203, control device 11 controls the opening of valve 201 to maintain the temperature of the circulating hot medium at a set temperature.

[0087] Control device 11 detects the pressure of pipes 229 and 249 using pressure sensors 225 and 245 respectively (step S1). Control device 11 compares the detected pressures of pipes 229 and 249 with their respective set values ​​(step S2). Based on the comparison result, control device 11 controls the inverter frequency of pumps 222 and 242 to bring the pressures of pipes 229 and 249 close to their respective set values ​​(step S3). That is, control device 11 controls the output pressure of pumps 222 and 242 based on the difference between the pressures detected by pressure sensors 225 and 245 and the set values ​​of the output pressures of pumps 222 and 242. This improves the temperature controllability of the controlled object (lower electrode LE).

[0088] [Operation of temperature control device 20]

[0089] Next, for example, the operation of the temperature control device 20 will be explained when the set temperature of the circulating heat medium, i.e., the set temperature of the lower electrode LE which is the controlled object, is set to 35°C, and when the temperature detected by the temperature sensor 203 is lower than the set temperature and higher than the set temperature. Furthermore, in the following explanation, the first set value of the pressure of the piping 229 in the first temperature control unit 220 and the second set value of the pressure of the piping 249 in the second temperature control unit 240 on the low-temperature side, i.e., the set value of the delivery pressure of pumps 222 and 242, are set to 0.7 to 1.0 MPa. In addition, the check valve 204 connected to the piping 212 on the high-temperature side is adjusted to open at 0.580 to 0.590 MPa, and the check valve 205 connected to the piping 215 on the low-temperature side is adjusted to open at 0.570 to 0.580 MPa. That is, the differential pressure between the high-temperature side and the low-temperature side is set to 0.010 MPa (high-temperature side > low-temperature side). The pressure settings mentioned above are just examples and are not limited to these values.

[0090] First, when the temperature detected by the temperature sensor 203 is lower than the set temperature, the control device 11 changes the opening of the valve 201 from its current position to the positive side, and the first heat medium flows from the pipe 210 into the pipe 16a. When the first heat medium flows from the pipe 210 into the pipe 16a, the pressure in the pipe 210 decreases, and the pressure in the pipes 211, 212, 229, and 230 connected to the pipe 210 also decreases. That is, the pressure detected by the pressure sensors 208 and 225 decreases.

[0091] At this time, before changing the opening degree of valve 201, the second hot medium on the low-temperature side flows into pipe 16a. In this case, when the opening degree of valve 201 is changed to the positive side, the pipe 213 side of valve 201 is closed. Therefore, the pressure in the low-temperature side pipe 215 rises, and the check valve 205 connected to pipe 215 changes from an open state to a closed state. On the other hand, on the high-temperature side, the pressure in pipe 212 decreases, thereby opening the check valve 204, and the hot medium corresponding to the inflow rate flows from pipe 16b to pipe 212.

[0092] The control device 11 compares the pressure in the piping 229 detected by the pressure sensor 225 with a first set value, and controls the inverter frequency of the pump 222 to increase the output pressure, so that the reduced pressure in the piping 229 approaches the set value. That is, feedback control is performed based on the pressure in the piping 229.

[0093] When the output pressure of pump 222 increases, the pressure in pipe 229 also increases, as do the pressures in pipes 210-212 and 230 connected to pipe 229. When the temperature detected by temperature sensor 203 reaches the set temperature, control device 11 changes the opening of valve 201 from its current position to the negative side. When the opening of valve 201 changes from its current position to the negative side, the pressure in pipe 210 increases, as do the pressures in pipes 211, 212, 229, and 230 connected to pipe 210. Therefore, check valve 204 closes.

[0094] Next, when the temperature detected by the temperature sensor 203 is higher than the set temperature, the control device 11 changes the opening of the valve 201 from its current position to the negative side, and the second heat medium flows from the pipe 213 into the pipe 16a. When the second heat medium flows from the pipe 213 into the pipe 16a, the pressure in the pipe 213 decreases, and the pressure in the pipes 214, 215, 249, and 250 connected to the pipe 213 also decreases. That is, the pressure detected by the pressure sensors 209 and 245 decreases.

[0095] At this time, before changing the opening degree of valve 201, the first hot medium on the high-temperature side flows into pipe 16a. In this case, when the opening position of valve 201 is changed to the negative side, the pipe 210 side of valve 201 is closed. Therefore, the pressure in the high-temperature side pipe 212 rises, and the check valve 204 connected to pipe 212 changes from an open state to a closed state. On the other hand, on the low-temperature side, the pressure in pipe 215 decreases, thereby opening the check valve 205, and the hot medium corresponding to the inflow rate flows from pipe 16b to pipe 215.

[0096] The control device 11 compares the pressure in the piping 249 detected by the pressure sensor 245 with a second set value, and controls the inverter frequency of the pump 242 to increase the output pressure, so that the reduced pressure in the piping 249 approaches the set value. That is, feedback control is performed based on the pressure in the piping 249.

[0097] When the delivery pressure of pump 242 increases, the pressure in pipe 249 also increases, as do the pressures in pipes 213-215 and 250 connected to pipe 249. When the temperature detected by temperature sensor 203 reaches the set temperature, control device 11 changes the opening of valve 201 from its current position to the positive side. When the opening of valve 201 changes from its current position to the positive side, the pressure in pipe 213 increases, as do the pressures in pipes 214, 215, 249, and 250 connected to pipe 213, thus closing check valve 205. In this way, the time when check valves 204 and 205 are simultaneously open can be shortened, thereby improving the temperature controllability of the controlled object (lower electrode LE). That is, pressure feedback control is performed based on the differential pressure of check valves 204 and 205, thus providing good responsiveness and suppressing pressure fluctuations. Furthermore, regarding the control within the temperature control device 20, a control unit can be provided within the temperature control device 20 to perform control within the temperature control device 20 based on information from the control device 11. In this case, feedback control can be performed based on the pressure detected by pressure sensors 208 and 209, instead of the pressure detected by pressure sensors 225 and 245.

[0098] [Experimental Results]

[0099] Next, use Figure 4 and Figure 5 The temperature characteristics of the embodiments of this implementation and the comparative example of the inverter frequency with fixed pumps 222 and 242 will be described. Figure 4 This is a graph illustrating an example of the temperature characteristics in the embodiment. Figure 4 In Figure 300, the curves representing the high-temperature side include curve 301, which represents the set temperature of the first heat medium; curve 302, which represents the temperature of the heat medium from the supply side (temperature sensor 226); and curve 303, which represents the temperature of the heat medium from the return side of the piping. Furthermore, in Figure 300, the curves representing the low-temperature side include curve 304, which represents the set temperature of the second heat medium; curve 305, which represents the temperature of the heat medium from the supply side (temperature sensor 246); and curve 306, which represents the temperature of the heat medium from the return side of the piping. Additionally, in Figure 300, curve 307 represents the opening degree of valve 201. The vertical axis of Figure 300 represents both temperature and opening degree.

[0100] In Figure 300, as an extreme example, the temperature characteristics are shown when the set temperature of the controlled object is changed from a low temperature (10°C) to a high temperature (70°C), and then from a high temperature (70°C) to a low temperature (10°C). The first heat medium is set to 90°C as shown in curve 301, and the second heat medium is set to -10°C as shown in curve 304.

[0101] When the set temperature of the controlled object changes from 10°C to 70°C at time 308, as shown by curve 307, the opening of valve 201 changes significantly to the positive side, and the first hot medium flows into the flow path of the controlled object. Furthermore, as shown by curve 302, the temperature on the return side of the first hot medium immediately drops to 39.2°C after time 308, but returns to below 90°C at time 309 because the flowing first hot medium reaches the return side. Similarly, the temperature on the delivery side of the first hot medium also temporarily decreases after time 308, as shown by curve 302, but returns to approximately the set temperature of 90°C at time 309.

[0102] Next, when the set temperature of the controlled object changes from 70°C to 10°C at time 309, as shown in curve 307, the opening degree of valve 201, although... Figure 4 A portion of the flow path is omitted, but the flow changes significantly towards the negative side, indicating the inflow of the second heat medium into the controlled object. Furthermore, as shown in curve 306, the temperature on the return side of the second heat medium immediately rises to 44.0°C after time 309, but returns to approximately -5°C at the right end of graph 300 due to the arrival of the flowing second heat medium on the return side. Similarly, as shown in curve 305, the temperature on the delivery side of the second heat medium temporarily rises after time 309, but returns to the set temperature of -10°C at the right end of graph 300.

[0103] Figure 5 This is a graph illustrating one example of the temperature characteristics in the comparative examples. Figure 5 In Figure 320, the curves representing the high-temperature side are: curve 321, representing the set temperature of the first heat medium; curve 322, representing the temperature of the heat medium on the delivery side; and curve 323, representing the temperature of the heat medium on the return side of the piping. Furthermore, in Figure 320, the curves representing the low-temperature side are: curve 324, representing the set temperature of the second heat medium; curve 325, representing the temperature of the heat medium on the delivery side; and curve 326, representing the temperature of the heat medium on the return side of the piping. Additionally, in Figure 320, curve 327 represents the opening degree of valve 201. The vertical axis of Figure 320 represents both temperature and opening degree.

[0104] In Chart 320, with Figure 4Similarly, Figure 300 shows the temperature characteristics when the set temperature of the controlled object is changed from a low temperature (10°C) to a high temperature (70°C), and then from a high temperature (70°C) to a low temperature (10°C). The first heat medium is set to 90°C as shown in curve 321, and the second heat medium is set to -10°C as shown in curve 324.

[0105] When the set temperature of the controlled object changes from 10°C to 70°C at time 328, as shown by curve 327, the opening of valve 201 changes significantly to the positive side, and the first hot medium flows into the flow path of the controlled object. Furthermore, as shown by curve 323, the temperature on the return side of the first hot medium immediately drops to 52.7°C after time 328, but returns to around 80°C because the flowing first hot medium reaches the return side. At time 329, it is also below 85°C and does not return to the set temperature of 90°C. Similarly, the temperature on the delivery side of the first hot medium also decreases after time 328, as shown by curve 322, and does not return to around 80°C or the set temperature of 90°C at time 329. On the other hand, as shown by curve 326, after time 328, the temperature on the return side of the second hot medium immediately rises to around 0°C, indicating that the check valve 205 on the second hot medium side and the check valve 204 on the first hot medium side open simultaneously. Therefore, it is believed that the reason is that at time 329, the temperature on the return side and the temperature on the delivery side of the first heat medium did not return to near the set temperature.

[0106] Next, when the set temperature of the controlled object changes from 70°C to 10°C at time 329, as shown in curve 327, the opening degree of valve 201, although... Figure 5 A portion of the flow path is omitted, but the flow changes significantly towards the negative side, indicating the inflow of the second heat medium into the controlled object. Furthermore, as shown in curve 326, the temperature on the return side of the second heat medium immediately rises to 28.9°C after time 329, but returns to approximately -5°C at the right end of graph 320 due to the arrival of the flowing second heat medium on the return side. Similarly, as shown in curve 325, the temperature on the delivery side of the second heat medium temporarily rises after time 329, but returns to the set temperature of -10°C at the right end of graph 300.

[0107] Based on the experimental results in Figures 300 and 320, in the comparative example, when changing from a low temperature to a high temperature, the high temperature on the return side of the second heat medium continued, and the check valve 205 was in the open state. On the other hand, in the embodiment, the temperature on the return side of the second heat medium hardly changed; therefore, it is assumed that the check valve 205 was in the closed state. That is, it can be seen that the temperature controllability is improved in the embodiment compared to the comparative example.

[0108] [Variation Example 1]

[0109] In the above embodiments, a temperature control device 20 of the type in which the heat medium circulates within the circulation section 200 has been described. However, a temperature control device of the type in which the heat medium flowing in the flow path 15 within the lower electrode LE is switched between a first heat medium and a second heat medium can also be used. In this case, the embodiment will be described as Modification 1. Furthermore, a portion of the structure and pressure control method of the substrate processing apparatus and the temperature control device in Modification 1 are the same as in the above embodiments, therefore, the repeated description of the structure and operation is omitted.

[0110] Figure 6 This is a diagram illustrating an example of the temperature control device in Modification 1. Figure 6 Compared to the temperature control device 20 in the above-described embodiment, the temperature control device 20a shown replaces the circulation unit 200, the first temperature control unit 220, and the second temperature control unit 240 with a switching unit 260, a first temperature control unit 220a, and a second temperature control unit 240a. Furthermore, the switching unit 260 includes valves 261-264, a temperature sensor 265, and piping 266-271.

[0111] The first temperature control unit 220a is connected to pipe 16a via pipe 272, pipe 266, and valve 261. Furthermore, the first temperature control unit 220a is connected to pipe 16b via pipe 273, pipe 268, and valve 262. In Modification 1, the first temperature control unit 220a controls the temperature of the first heat medium, which is on the high-temperature side. The first temperature control unit 220a supplies the temperature-controlled first heat medium to the flow path 15 of the lower electrode LE via pipe 272, pipe 266, valve 261, and pipe 16a. Then, the heat medium supplied to the flow path 15 of the lower electrode LE returns to the first temperature control unit 220a via pipe 16b, valve 262, pipe 268, and pipe 273. The piping consisting of pipe 272, pipe 266, and pipe 16a is an example of a supply piping or a first supply piping. Furthermore, the piping consisting of piping 16b, piping 268, and piping 273 is an example of a return piping or a first return piping.

[0112] The second temperature control unit 240a is connected to pipe 16a via pipe 274, pipe 269, and valve 261. Furthermore, the second temperature control unit 240a is connected to pipe 16b via pipe 275, pipe 271, and valve 262. In Modification 1, the second temperature control unit 240a controls the temperature of the second heat medium, which is on the low-temperature side. The second temperature control unit 240a supplies the temperature-controlled second heat medium into the flow path 15 of the lower electrode LE via pipe 274, pipe 269, valve 261, and pipe 16a. Then, the heat medium supplied to the flow path 15 of the lower electrode LE returns to the second temperature control unit 240a via pipe 16b, valve 262, pipe 271, and pipe 275. The piping consisting of pipe 274, pipe 269, and pipe 16a is an example of a supply piping or a second supply piping. Furthermore, the piping consisting of piping 16b, piping 271, and piping 275 is an example of a return piping or a second return piping.

[0113] Valve 261 is provided at the connection between pipe 16a and pipes 266 and 269, and switches the heat medium flowing in the flow path 15 of the lower electrode LE to either the first heat medium or the second heat medium. Valve 262 is provided at the connection between pipe 16b and pipes 268 and 271, and switches the output destination of the heat medium flowing out of the flow path 15 of the lower electrode LE to either the first temperature control unit 220a or the second temperature control unit 240a.

[0114] The connection point F between piping 272 and piping 266, and the connection point G between piping 273 and piping 268, is connected by piping 267, which serves as a bypass piping. A bypass valve 263 is provided in piping 267.

[0115] The connection point H between piping 274 and piping 269, and the connection point I between piping 275 and piping 271, is connected by piping 270, which serves as a bypass piping. A bypass valve 264 is provided on piping 270.

[0116] A temperature sensor 265 is installed on the piping 16a within the temperature control device 20a to measure the temperature at the inlet side of the flow path 15. Alternatively, the temperature sensor 265 can be located outside the temperature control device 20a. For example, the temperature sensor 265 can be located directly below the lower electrode LE, such as at the connection between the piping 16a and the flow path 15, or it can be located between the lower electrode LE and the temperature control device 20a.

[0117] The opening and closing of valves 261, 262 and bypass valves 263, 264 are controlled by the control device 11 respectively. Furthermore, the first temperature control unit 220a and the second temperature control unit 240a are identical to the first temperature control unit 220 and the second temperature control unit 240 in the above-described embodiment, except that they lack variable valves 227, 228 and variable valves 247, 248; therefore, their description is omitted.

[0118] In the temperature control device 20a, when the first heat medium on the high-temperature side is supplied to the flow path 15 of the lower electrode LE, the pipe 266 side of valve 261 is open and the pipe 269 side is closed, and the pipe 268 side of valve 262 is open and the pipe 271 side is closed. Furthermore, the bypass valve 263 is closed and the bypass valve 264 is open. Therefore, the first heat medium on the high-temperature side supplied from the first temperature control unit 220a is supplied to the flow path 15 of the lower electrode LE and returns to the first temperature control unit 220a, while the second heat medium on the low-temperature side supplied from the second temperature control unit 240a returns to the second temperature control unit 240a via the bypass valve 264.

[0119] On the other hand, in the temperature control device 20a, when the low-temperature side second heat medium is supplied to the flow path 15 of the lower electrode LE, the pipe 266 side of valve 261 is closed and the pipe 269 side is open, and the pipe 268 side of valve 262 is closed and the pipe 271 side is open. Furthermore, the bypass valve 263 is open and the bypass valve 264 is closed. Therefore, the low-temperature side second heat medium supplied from the second temperature control unit 240a is supplied to the flow path 15 of the lower electrode LE and returns to the second temperature control unit 240a, while the high-temperature side first heat medium supplied from the first temperature control unit 220a returns to the first temperature control unit 220a via the bypass valve 263.

[0120] [Pressure Control Methods]

[0121] The control device 11 is also included in the temperature control device 20a, and is similar to the embodiment described above. Figure 3Similarly, pressure control processing is performed. That is, the control device 11 detects the pressure of pipes 272 and 274 using pressure sensors 225 and 245 respectively (step S1). The control device 11 compares the detected pressure of pipes 272 and 274 with their respective set values ​​(step S2). Based on the comparison result, the control device 11 controls the inverter frequency of pumps 222 and 242 to bring the pressure of pipes 272 and 274 close to their respective set values ​​(step S3). That is, the control device 11 controls the output pressure of pumps 222 and 242 based on the difference between the pressure detected by pressure sensors 225 and 245 and the set values ​​of the output pressure of pumps 222 and 242. In this way, pressure fluctuations in the pipes 272 and 274 supplying the heat medium are suppressed, thereby improving the temperature controllability of the controlled object (lower electrode LE).

[0122] [Variation Example 2]

[0123] In the above-described embodiments and Modification 1, temperature control devices 20 and 20a for supplying a heat medium to a controlled object were described. However, temperature control devices can also be applied to control the temperature of upper systems such as upper electrodes installed on the upper part of the processing container. In this case, the embodiment will be described as Modification 2. Furthermore, part of the structure and pressure control method of the substrate processing apparatus and temperature control device in Modification 2 are the same as those in the above-described embodiments and Modification 1. Therefore, the description of this repeated structure and operation is omitted.

[0124] Figure 7 This is a diagram representing an example of the controlled object in Variation Example 2. Figure 2 The substrate processing apparatus 400 shown is an example of a substrate processing apparatus, which has an upper electrode on the upper part of the processing container 401, on which a cooling plate, which is the object to be controlled, is disposed. In the substrate processing apparatus 400, a cooling plate 410 is supported on the upper part of the processing container 401 via a support member. The cooling plate 410 has a heater 411 and an electrode plate 412. The electrode plate 412 is an example of an upper electrode, with its lower surface facing the processing space and opposite to the upper surface of the mounting stage 413, which has a lower electrode. Above the cooling plate 410, a top plate 402 is supported on the processing container 401. Furthermore, in Figure 7 In this paper, the gas supply system and the high-frequency power supply system for the upper electrode are omitted.

[0125] A flow path 409 for facilitating the flow of a heat medium is formed in the cooling plate 410. A flow path 408 for facilitating the flow of a heat medium is formed in the upper part of the processing container 401. Similarly, a flow path 406 for facilitating the flow of a heat medium is formed in the top plate 402. Flow paths 406 and 408 are connected by a flow path 407. That is, flow paths 406-408 for controlling the temperature of the processing container 401 and the top plate 402 and flow path 409 for controlling the temperature of the cooling plate 410 are provided in the upper part of the processing container 401. Furthermore, the cooling plate 410 is cooled by increasing the flow rate of the heat medium by, for example, 35°C when heat is input from the plasma, and is adjusted to, for example, 150°C when idle by reducing the flow rate of the heat medium and heating it using the heater 411.

[0126] Temperature control device 20b supplies heat medium to flow paths 406-408 via piping 403 connected to flow path 406. The heat medium supplied to flow paths 406-408 returns to temperature control device 20b via piping 404 connected to flow path 408. Furthermore, temperature control device 20b supplies heat medium to flow path 409 via piping 403 and flow control valve 405. The heat medium supplied to flow path 409 returns to temperature control device 20b via piping 404 connected to flow path 409.

[0127] Figure 8 This is a diagram illustrating an example of the temperature control device in Modification 2. Figure 8 The temperature control device 20b shown, compared to the temperature control device 20 of the above-described embodiment, does not have a circulation section 200, and instead has a temperature control section 240b instead of the first temperature control section 220 and the second temperature control section 240. That is, the temperature control device 20b does not have multiple temperature control sections such as high-temperature side and low-temperature side, but instead has a temperature control section 240b that supplies a heat medium controlled to a set temperature. Furthermore, in Figure 8 The paths for supplying the heat medium within convection paths 406-408 are omitted. Furthermore, the temperature control device 20b has an internal control unit 280. The control unit 280 controls various components within the temperature control device 20b based on information from the substrate processing device 400.

[0128] The temperature control unit 240b is connected to multiple substrate processing devices 400 by piping 403, 404. Figure 8 The example illustrates substrate processing apparatuses 400 and 400a. Furthermore, examples illustrate flow control valves 405 and 405a corresponding to substrate processing apparatuses 400 and 400a, respectively. Additionally, in... Figure 8In the document, regarding piping 403, the branched piping for substrate processing devices 400 and 400a is referred to as piping 422 and 422a. Furthermore, regarding piping 404, the piping before merging is referred to as piping 423 and 423a, corresponding to substrate processing devices 400 and 400a.

[0129] Temperature control unit 240b is connected to substrate processing apparatus 400 via piping 403, piping 421, flow control valve 405, and piping 422. Furthermore, temperature control unit 240b is connected to substrate processing apparatus 400 via piping 404, piping 424, and piping 423. In Modification 2, temperature control unit 240b controls the temperature of a heat medium set to a set temperature (e.g., 35°C). With flow control valve 405 open, temperature control unit 240b supplies temperature-controlled heat medium to the flow path 409 of substrate processing apparatus 400 via piping 403, piping 421, flow control valve 405, and piping 422. Then, the heat medium supplied to flow path 409 returns to temperature control unit 240b via piping 423, piping 424, and piping 404. The piping consisting of pipes 403, 421, and 422 is an example of a supply piping. Furthermore, the piping consisting of pipes 423, 424, and 404 is an example of a return piping.

[0130] Similarly, the temperature control unit 240b is connected to the substrate processing apparatus 400a via piping 403, piping 421, flow control valve 405a, and piping 422a. Furthermore, the temperature control unit 240b is connected to the substrate processing apparatus 400a via piping 404, piping 424, and piping 423a. With the flow control valve 405a open, the temperature control unit 240b supplies a temperature-controlled heat medium to the substrate processing apparatus 400a through piping 403, piping 421, flow control valve 405a, and piping 422a within the flow path 409 of the substrate processing apparatus 400a. Then, the heat medium supplied to the flow path 409 returns to the temperature control unit 240b via piping 423a, piping 424, and piping 404.

[0131] The connection point J between piping 403 and piping 421, and the connection point K between piping 404 and piping 424, are connected by piping 425, which serves as a bypass piping. A bypass valve 420 is provided in piping 425. The bypass valve 420 opens when the downstream flow control valves 405 and 405a are all closed, allowing a certain amount of hot medium flowing in each flow path 409 to return from piping 403 to piping 404.

[0132] The opening and closing of flow control valves 405, 405a and bypass valve 420 are controlled by control unit 280 respectively. Furthermore, temperature control unit 240b is identical to the second temperature control unit 240 of the above embodiment, except that it lacks variable valves 247 and 248, therefore its description is omitted.

[0133] The flow control valves 405 and 405a are opened and closed according to the temperature control in the substrate processing devices 400 and 400a. Therefore, the pressure in the piping 403 on the outlet side of the heat medium changes according to the opening and closing of the flow control valves 405 and 405a.

[0134] [Pressure Control Methods]

[0135] Control unit 280 and the above-described embodiment Figure 3 Similarly, pressure control processing is performed. That is, the control unit 280 detects the pressure of the piping 403 using the pressure sensor 245 (step S1). The control unit 280 compares the detected pressure of the piping 403 with a set value (step S2). Based on the comparison result, the control unit 280 controls the inverter frequency of the pump 242 to bring the pressure of the piping 403 close to the set value (step S3). That is, the control unit 280 controls the output pressure of the pump 242 based on the difference between the pressure detected by the pressure sensor 245 and the set value of the pump 242's output pressure. In this way, pressure fluctuations within the piping supplying the heat medium are suppressed, thus improving the temperature controllability of the controlled object (cooling plate 410).

[0136] According to this embodiment and its variations, the temperature control device (20, 20a, 20b) includes: supply piping (pipes 229, 249, 272, 274, 403) for supplying heat medium to the controlled object (lower electrode LE, cooling plate 410); return piping (pipes 230, 250, 273, 275, 404) for returning heat medium from the controlled object; pumps (222, 242) for discharging heat medium from the supply piping; pressure sensors (225, 245) for detecting the pressure of the supply piping connected immediately after the pump; and a control unit (280). The control unit controls the pump's discharge pressure based on the difference between the pressure detected by the pressure sensors and a set value of the pump's discharge pressure. As a result, the temperature controllability of the controlled object can be improved. Alternatively, feedback control can be performed based on the pressure detected by pressure sensors 208, 209 instead of the pressure detected by pressure sensors 225, 245. Alternatively, feedback control can be performed based on the pressure detected by pressure sensors added to the supply piping (pipes 229, 249, 272, 274, 403) that supplies the heat medium.

[0137] Furthermore, according to this embodiment and its variations, the delivery pressure is controlled by controlling the inverter frequency of the pump. As a result, pressure variations within the piping supplying the heat medium can be suppressed.

[0138] Furthermore, according to Modification 2, there are multiple controlled objects. As a result, even if the pressure in the piping supplying the heat medium varies depending on the operation of the multiple controlled objects, changes in the pressure in the piping supplying the heat medium can be suppressed.

[0139] Furthermore, according to this embodiment, the substrate processing apparatus 1 includes: a stage PD disposed within a processing container 12 capable of holding a substrate (wafer W); a first temperature control unit 220 supplying a heat medium at a first temperature to a flow path 15 disposed inside the stage PD via a first piping (pipes 229, 210, 16a); a second temperature control unit 240 supplying a heat medium at a second temperature to the flow path 15 via a second piping (pipes 249, 213, 16a); a third piping (pipes 16b, 207, 16a) connecting the outlet of the flow path 15 to the inlet of the flow path 15 for circulating the heat medium; a first check valve (204) connected to the first piping, a second check valve (205) connected to the second piping, and a third check valve (206) connected to the third piping and opening during heat medium circulation, which are connected to the outlet of the flow path 15 and branch in three directions; and a control unit (control device 11). The control unit detects the pressure of the first piping and the second piping. Furthermore, the control unit compares the detected pressure of the first pipe with a first set value for the pressure of the first pipe, and compares the detected pressure of the second pipe with a second set value for the pressure of the second pipe. Additionally, when the first check valve opens due to the pressure difference between the outlet side of flow path 15 and the first pipe, the control unit controls the first temperature control unit 220 based on the comparison result to bring the pressure of the first pipe closer to the first set value. Furthermore, when the second check valve opens due to the pressure difference between the outlet side of flow path 15 and the second pipe, the control unit controls the second temperature control unit 240 based on the comparison result to bring the pressure of the second pipe closer to the second set value. As a result, control is performed to ensure that the pressure on the release side of the pumps (222, 242) is constant, thereby improving the temperature controllability of the controlled object (lower electrode LE).

[0140] Furthermore, according to this embodiment, a valve 201 for controlling the mixing ratio of the hot medium flowing in the first pipe, the second pipe, and the third pipe, and a temperature sensor 203 for detecting the temperature of the mixed hot medium are provided at the inlet side of the flow path 15. The opening degree of the valve 201 is controlled based on the temperature detected by the temperature sensor 203 to mix the hot medium flowing in the first or second pipe with the hot medium flowing in the third pipe. As a result, the temperature controllability of the controlled object (lower electrode LE) can be improved.

[0141] Furthermore, according to this embodiment, the pressure of the first piping is detected by a first pressure sensor (pressure sensor 225) of the first temperature control unit 220, which is located immediately after the pump 222, and the pressure of the second piping is detected by a second pressure sensor (pressure sensor 245) of the second temperature control unit 240, which is located immediately after the pump 242. As a result, the pressure of the piping connected immediately after the pump can be fed back and controlled as the inverter frequency of the pump.

[0142] Furthermore, according to this embodiment, the pump's delivery pressure is controlled by controlling the inverter frequency of the pumps (222, 242). As a result, the pump's delivery pressure can be stabilized.

[0143] The embodiments of the present invention are illustrative in all respects and should not be considered limiting. The above embodiments can be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims.

[0144] Furthermore, in the above embodiments, capacitively coupled plasma (CCP) was used as an example of a plasma source, but the technology of the present invention is not limited to this. For example, inductively coupled plasma (ICP), microwave-excited surface wave plasma (SWP), electron cyclotron resonance plasma (ECP), or helical wave-excited plasma (HWP) can also be used as plasma sources.

[0145] Furthermore, in the above embodiments, a plasma etching apparatus was used as an example to describe the substrate processing apparatus 1, but the technology of the present invention is not limited to this. Any apparatus that uses a temperature-controlled heat medium to control the temperature of the temperature-controlled object such as the wafer W is acceptable. In addition to etching apparatuses, the technology of the present invention can also be applied to film forming apparatuses, modification apparatuses, or cleaning apparatuses.

Claims

1. A temperature control device, characterized in that, include: Supply piping for supplying heat medium to the controlled object; Return piping for the return of the heat medium from the controlled object; A first pump that delivers the heat medium to the supply piping; A first pressure sensor detects a first pressure in the supply piping connected immediately after the first pump; A second pump that supplies the heat medium to the supply piping; A second pressure sensor detects a second pressure in the supply piping connected immediately after the second pump; A temperature sensor for detecting the temperature of the supply piping; A valve that controls the mixing ratio of the heat medium pumped by the first pump to the heat medium pumped by the second pump; and Control Department The control unit is configured such that, When the detected temperature of the supply piping is lower than the set temperature, the output pressure of the first pump is controlled based on the difference between the first pressure detected by the first pressure sensor and the first set value of the output pressure of the first pump. When the detected temperature of the supply piping reaches the set temperature, the valve opening is controlled to reduce the proportion of the heat medium supplied by the first pump. When the detected temperature of the supply piping is higher than the set temperature, the output pressure of the second pump is controlled based on the difference between the second pressure detected by the second pressure sensor and the second set value of the output pressure of the second pump.

2. The temperature control device according to claim 1, characterized in that: The control unit controls the output pressure of the first pump by controlling the inverter frequency of the first pump. The control unit controls the output pressure of the second pump by controlling the inverter frequency of the second pump.

3. The temperature control device according to claim 1 or 2, characterized in that: There are multiple controlled objects.

4. A substrate processing apparatus, characterized in that, include: A substrate mounting stage configured within a processing container; A third piping for circulating the heating medium connects from the outlet of the flow path to the inlet of the flow path. The first temperature control unit supplies the heating medium at a first temperature to the flow path located inside the platform via the first piping, and the second temperature control unit supplies the heating medium at a second temperature to the flow path via the second piping. A first check valve connected to the first piping, a second check valve connected to the second piping, and a third check valve connected to the third piping and open during the circulation of the hot medium are connected to the outlet of the flow path and branch in three directions. as well as Control Department The control unit is configured to control the substrate processing device to detect the pressure of the first piping and the second piping. The control unit is configured to control the substrate processing apparatus to compare the detected pressure of the first piping with a first set value for the pressure of the first piping, and to compare the detected pressure of the second piping with a second set value for the pressure of the second piping. The control unit is configured to control the substrate processing device based on a comparison result when the first check valve opens due to the pressure difference between the outlet side of the flow path and the first piping, so that the pressure of the first piping approaches the first set value. The control unit is configured to control the substrate processing device based on a comparison result when the second check valve opens due to the pressure difference between the outlet side of the flow path and the second piping, so that the pressure of the second piping approaches the second set value.

5. The substrate processing apparatus according to claim 4, characterized in that: A valve for controlling the mixing ratio of the heat medium flowing in the first pipe, the second pipe, and the third pipe, and a temperature sensor for detecting the temperature of the mixed heat medium are provided at the inlet side of the flow path. The valve opening is controlled according to the temperature detected by the temperature sensor, so that the hot medium flowing in the first or second piping is mixed with the hot medium flowing in the third piping.

6. The substrate processing apparatus according to claim 4 or 5, characterized in that: The first temperature control unit includes a first pump and a first pressure sensor disposed immediately after the first pump, wherein the pressure of the first piping is detected by the first pressure sensor. The second temperature control unit includes a second pump and a second pressure sensor located immediately after the second pump, and the pressure of the second piping is detected by the second pressure sensor.

7. The substrate processing apparatus according to claim 6, characterized in that: The control unit controls the output pressure of the first pump by controlling the inverter frequency of the first pump. The control unit controls the output pressure of the second pump by controlling the inverter frequency of the second pump.

8. A pressure control method in a temperature control device, characterized in that: The temperature control device includes: Supply piping for supplying heat medium to the controlled object; Return piping for the return of the heat medium from the controlled object; A first pump that delivers the heat medium to the supply piping; A first pressure sensor detects a second pressure in the supply piping connected immediately after the first pump; A second pump that supplies the heat medium to the supply piping; A second pressure sensor detects a second pressure in the supply piping connected immediately after the second pump; A temperature sensor that detects the temperature of the supply piping; and A valve that controls the mixing ratio of the heat medium delivered by the first pump and the heat medium delivered by the second pump. In the pressure control method described above When the detected temperature of the supply piping is lower than the set temperature, the output pressure of the first pump is controlled based on the difference between the first pressure detected by the first pressure sensor and the first set value of the output pressure of the first pump. When the detected temperature of the supply piping reaches the set temperature, the valve opening is controlled to reduce the proportion of the heat medium supplied by the first pump. When the detected temperature of the supply piping is higher than the set temperature, the output pressure of the second pump is controlled based on the difference between the second pressure detected by the second pressure sensor and the second set value of the output pressure of the second pump.

Images