Extreme ultraviolet mask with alloy-based absorber

By using an alloy-based absorber layer and reflective multilayer stacking in extreme ultraviolet (EUV) lithography, the problem of EUV mask shading effect was solved, achieving higher precision pattern transfer and more efficient lithography process, suitable for high-density integrated circuit manufacturing.

CN115145109BActive Publication Date: 2026-06-12TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
Filing Date
2022-04-25
Publication Date
2026-06-12

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Abstract

The present disclosure relates to extreme ultraviolet masks with alloy-based absorbers. An extreme ultraviolet mask is provided, including a substrate, a reflective multilayer stack on the substrate, and a multilayer patterned absorber layer on the reflective multilayer stack. Disclosed embodiments include absorber layers containing an alloy including ruthenium (Ru), chromium (Cr), platinum (Pt), gold (Au), iridium (Ir), titanium (Ti), niobium (Nb), rhodium (Rh), molybdenum (Mo), tungsten (W), or palladium (Pd), and at least one alloying element. The at least one alloying element includes ruthenium (Ru), chromium (Cr), tantalum (Ta), platinum (Pt), gold (Au), iridium (Ir), titanium (Ti), niobium (Nb), rhodium (Rh), molybdenum (Mo), hafnium (Hf), boron (B), nitrogen (N), silicon (Si), zirconium (Zr), or vanadium (V). Other embodiments include multilayer patterned absorber structures having layers including alloys and alloying elements, where at least two layers in the multilayer structure have different compositions.
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