Semiconductor device and method of manufacturing the same
By employing a stacked structure with silicon-germanium layer insertion and dog-bone channel components in multi-gate transistors, the problems of channel layer loss and increased junction resistance caused by internal spacer features are solved, thereby improving the on-resistance and switching speed of semiconductor devices.
CN115148604BActive Publication Date: 2026-07-14TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
- Filing Date
- 2022-05-16
- Publication Date
- 2026-07-14
AI Technical Summary
Technical Problem
In existing multi-gate transistors, the formation of internal spacer features leads to problems such as channel layer loss, reduced junction coverage area, increased parasitic resistance, and increased critical voltage.
Method used
A stacked structure with multiple silicon-germanium layers inserted between silicon layers is used to form a dog-bone shaped channel component. Internal spacer grooves and gate structures are formed by selective etching to ensure the integrity of the channel region and the junction coverage area.
Benefits of technology
It reduces junction resistance, increases on-resistance and switching speed, reduces critical voltage, and improves the performance of semiconductor devices.
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Smart Images
Figure CN115148604B_ABST
Abstract
The present disclosure provides a semiconductor device including a via member including a first connection portion, a second connection portion, and a via portion disposed between the first connection portion and the second connection portion, a first internal spacer feature disposed above the first connection portion and in contact with the first connection portion, a second internal spacer feature disposed below the first connection portion and in contact with the first connection portion, and a gate structure wrapping around the via portion of the via member. A shape of a cross-sectional view of the via member includes a dog bone shape. By providing the via member with the dog bone shape, a parasitic resistance of the semiconductor device is advantageously reduced, and performance of the semiconductor device can be significantly improved.
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