Semiconductor device package with conductive vias and method of manufacturing the same

Abstract

The present disclosure relates to semiconductor device packages having conductive vias and methods of manufacturing the same, including embodiments of semiconductor device packages having a plurality of conductive vias and traces formed by a laser direct structuring process that includes at least a laser step and an electroplating step. A first conductive via of the plurality of conductive vias extends into a sealant to a contact pad of a die encapsulated within the sealant, and a second conductive via of the plurality of conductive vias extends into the sealant to an end portion of a lead within the sealant. The second conductive via of the plurality of conductive vias can couple the lead to the contact pad of the die. In some embodiments, the leads of the semiconductor device package can extend outward and away from the sealant. In some other alternative embodiments, the leads of the semiconductor device package can extend outward and away from the sealant, then bend back toward the sealant such that the ends of the leads overlap a surface of the sealant in which the plurality of conductive vias are present.

Description

Technical Field

[0001] This disclosure relates to a package having at least one conductive via coupled to a die and at least one electrical connection coupling the die to leads. Background Technology

[0002] Typically, semiconductor device packages, such as chip-scale packages or wafer-level chip-scale packages (WLCSPs), contain semiconductor devices, semiconductor dies, or integrated circuit dies encapsulated in molding compounds, polymers, sealants, etc. The semiconductor device can be a sensor configured to detect any number or mass, or a controller for controlling various other electronic components. For example, such a semiconductor device package can detect light, temperature, sound, pressure, stress, strain, or any other quantity or mass. Other semiconductor devices can be controllers, microprocessors, or memory.

[0003] Traditional WLCSPs can be formed by including conductive pads to which solder material is directly coupled for mounting to electronic components. Typically, the solder material is in the form of solder balls, which are generally uniform in shape and size, allowing the WLCSP to be horizontal when mounted or coupled to the surface of a printed circuit board (PCB), electronic device, or other electronic components. For example, a redistribution layer can be formed on the surface of the die, and multiple conductive pads can be formed and exposed within the redistribution layer, allowing solder balls to be coupled to the conductive pads.

[0004] When a conventional WLCSP is mounted onto a PCB, there is a significant thermal mismatch between the die of the conventional WLCSP and the PCB on which it is mounted. Typically, the coefficient of thermal expansion (CTE) of the die is smaller than that of the PCB. This difference in CTE causes the die and the PCB to expand and contract differently when exposed to temperature changes (e.g., from cold to hot or from hot to cold). The solder balls are exposed to these differences in expansion and contraction, and this can lead to solder ball failure, such as cracking, shearing, fracture, delamination, or other similar failures occurring within the solder balls. These failures can cause the conventional WLCSP to malfunction, which in turn can ultimately lead to functional failure of electronic devices that contain or utilize conventional WLCSPs.

[0005] When solder balls are formed on the conductive pads of a conventional WLCSP for mounting to a PCB, the conductive pads must be spaced far enough apart to avoid crosstalk between adjacent solder balls. For example, during a reflow process that mounts the WLCSP to the PCB using solder balls, the solder balls may come into physical contact with each other, or may come close enough to generate an arc, causing crosstalk between adjacent solder balls that prevents the WLCSP from functioning properly or as intended. This inappropriate functionality can significantly reduce the usability of the entire electronic device, such as a telephone, smartphone, tablet, television, computer, laptop, camera, or other electronic devices in which semiconductor packages are contained.

[0006] This solder ball pitch and thermal mismatch limit the number of input / output (I / O) contacts that can be included in a WLCSP, thus limiting the WLCSP's ability to perform each increasingly complex function. Summary of the Invention

[0007] This disclosure relates to embodiments of semiconductor device packages and methods for manufacturing such packages. These embodiments have a combination of electrical connections that provide board-level reliability (BLR) and robustness to withstand stress and strain caused by on-board thermal cycling (TCoB), and have multiple input / output (I / O) electrical connections.

[0008] In at least one embodiment of a semiconductor device package, the package includes a die, die pads, and an adhesive coupling the die to the die pads. The die includes a plurality of contact pads. The package also includes a sealant encapsulating the die, die pads, and adhesive. At least one conductive via extends into the package to one of the contact pads and provides electrical signals for transmission to and from the die within the sealant. At least one lead extends into the package and is coupled to one of the contact pads via a second conductive via. The second conductive via extends into the sealant and across the sealant to couple the lead to the contact pad.

[0009] In at least one embodiment of a method for manufacturing a semiconductor device package, the sealant used to form the package is doped with an additive material that is activated when exposed to a laser during a laser direct forming (LDS) process. The laser used in the LDS process forms an opening in the sealant, followed by the formation of a first conductive layer lining the opening. A first conductive layer is formed on the surface of at least one lead and the surface of a contact pad. In a conductive plating step following the completion of the LDS process, a second conductive layer is formed on the first conductive layer filling the opening, thus forming a first conductive via and a second conductive via within the sealant and at least one embodiment of the semiconductor device package. Attached Figure Description

[0010] To better understand the embodiments, reference is now made to the accompanying drawings by way of example. In the drawings, unless the context otherwise requires, the same reference numerals denote the same or similar elements or actions. The dimensions and relative scales of the elements in the drawings are not necessarily drawn to scale. For example, some of these elements may be enlarged and positioned to improve the readability of the drawings.

[0011] Figure 1A The diagram illustrates along Figure 1B The embodiment of the semiconductor device package of this disclosure is shown in line AA.

[0012] Figure 1B The diagram shows... Figure 1A A bottom plan view of an embodiment of the semiconductor device package shown;

[0013] Figure 1C The diagram shows Figure 1A and Figure 1B An enlarged enhanced view of an embodiment of the first conductive via of the semiconductor device package shown in the illustration;

[0014] Figure 2A The diagram illustrates along Figure 2B The alternative embodiments of the semiconductor device package disclosed herein are shown in line BB.

[0015] Figure 2B The diagram shows... Figure 2A Bottom plan view of an alternative embodiment of the semiconductor device package shown;

[0016] Figure 3 This is a cross-sectional view of an alternative embodiment of the semiconductor device package disclosed herein;

[0017] Figure 4 This is a cross-sectional view of an alternative embodiment of the semiconductor device package disclosed herein;

[0018] Figure 5 This is a cross-sectional view of an alternative embodiment of the semiconductor device package disclosed herein;

[0019] Figure 6 This is a cross-sectional view of an alternative embodiment of the semiconductor device package disclosed herein;

[0020] Figure 7 This is a cross-sectional view of an alternative embodiment of the semiconductor device package disclosed herein;

[0021] Figure 8 This is a cross-sectional view of an alternative embodiment of the semiconductor device package disclosed herein;

[0022] Figure 9It is coupled to the substrate, such as Figure 1A and Figure 1B A cross-sectional view of an embodiment of the semiconductor package shown;

[0023] Figures 10A to 10C The diagram shows... Figure 1A and Figure 1B The steps of a manufacturing method for an embodiment of the semiconductor device package shown;

[0024] Figure 11 The diagram shows... Figure 3 The steps of the alternative manufacturing method for the alternative embodiment of the semiconductor device package shown; and

[0025] Figures 12A to 12C The diagram shows... Figure 2A and Figure 2B The steps of an alternative manufacturing method for an alternative embodiment of the semiconductor device package shown. Detailed Implementation

[0026] In the following description, certain specific details are set forth in order to provide a thorough understanding of various embodiments of this disclosure. However, those skilled in the art will understand that this disclosure may be practiced without these specific details. In other instances, well-known structures associated with electronic components, packaging, and semiconductor manufacturing technologies have not been described in detail to avoid unnecessarily obscuring the description of embodiments of this disclosure.

[0027] Unless the context otherwise requires, the word “comprising” and its variations (such as “including” and “containing”) in the following description and claims shall be interpreted in an open inclusive sense, that is, “including, but not limited to”.

[0028] The use of ordinal numbers such as first, second, third, etc. does not necessarily imply a ranked order, but may simply distinguish multiple instances of an action or similar structure or material.

[0029] Throughout this specification, the reference to "an embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with that embodiment is included in at least one embodiment. Therefore, the phrases "in an embodiment" or "in one embodiment" appearing in various places throughout the specification do not necessarily refer to the same embodiment. Furthermore, a particular feature, structure, or characteristic may be combined in any suitable manner in one or more embodiments.

[0030] The terms “top,” “bottom,” “up,” “down,” “left,” and “right” are used only in the discussion of the orientation of parts based on the accompanying drawings of this disclosure. These terms are not intended to limit the possible locations of explicit, implicit, or inherent disclosures in this disclosure.

[0031] The term "substantially" is used to clarify the subtle differences and variations that may exist when manufacturing packages in the real world, since nothing can be exactly the same or identical. In other words, "substantially" means and indicates that there may be some minor variations in practice, but they are made or manufactured within selected tolerances.

[0032] As used in this specification and the appended claims, unless otherwise expressly stated, the singular forms “a,” “an,” and “the” include the plural references.

[0033] While various embodiments have been shown and described with respect to semiconductor dies and semiconductor packages, it should be readily understood that embodiments of this disclosure are not limited thereto. In various embodiments, the structures, apparatuses, methods, etc., described herein may be embodied in or otherwise utilized in any suitable type or form of semiconductor die or package, and may be manufactured using any suitable semiconductor die and package technology as needed.

[0034] This disclosure describes a semiconductor device package with combinations of electrical connections that provide the package with board-level reliability (BLR) and robustness against stress and strain caused by on-board thermal cycling (TCoB). TCoB can be caused by the expansion and contraction of at least one embodiment of the semiconductor device package as it moves from a hot environment to a cold environment, and vice versa. For example, as Figure 1A The illustrated semiconductor device package includes a sealant, an end of a first conductive via located on a first surface of the sealant, a first lead extending from a first sidewall of the sealant, and a second lead extending from a second sidewall of the sealant. The second sidewall of the sealant is opposite to the first sidewall of the sealant. When the first and second leads, along with the first conductive via, are coupled to a printed circuit board (PCB) via solder material, the first and second leads may bend and flex due to expansion and contraction caused by temperature changes within the semiconductor device package. This bending and flexing of the leads absorbs the stress and strain caused by expansion and contraction, thereby reducing the likelihood of cracking or delamination in the solder material or other electrical connections of the semiconductor device package. These electrical connections can be internal connections within the sealant (e.g., conductive vias, conductive layers, wire bonds, or some other similar internal electrical connections) or external electrical connections that are connections outside the sealant (e.g., solder balls, wire bonds, leads, contact pads, or other similar external electrical connections). See, for example, [link to relevant documentation]. Figure 1A The leads of the semiconductor device package shown.

[0035] Similar to the TCoB discussed directly above, when Figure 1AWhen a semiconductor device package is mounted to a PCB, thermal mismatch may occur between the package and the PCB. For example, the PCB may expand and contract by a first amount, and the semiconductor device package may expand and contract by a second amount different from the first. This difference in expansion and contraction between the PCB and the semiconductor device package can lead to the same or similar failures discussed above. However, the bending and flexing of the leads absorb the stress and strain caused by the difference in expansion and contraction between the PCB and the semiconductor device package, thereby reducing the likelihood of solder joint cracking or delamination, or other electrical connection failures between the PCB and the semiconductor device package.

[0036] Although it exhibits good robustness against BLR, TCoB, and thermal mismatch (as discussed directly above), Figure 1A The illustrated semiconductor device package has multiple input / output (I / O) electrical connections for receiving and transmitting several electrical signals. These multiple I / O electrical connections provide the semiconductor device package with the ability to perform increasingly complex functions. These multiple I / O electrical connections may include first and second leads, contact pads, and a plurality of contact pads and leads. These multiple I / O electrical connections maintain a relatively small footprint (e.g., the total amount of space occupied by the package within the electrical device) compared to the footprint of other conventional semiconductor devices in at least one embodiment of the semiconductor device package.

[0037] Figure 1A It is along Figure 1B The diagram shows a cross-sectional view of an embodiment of a semiconductor device package 100, taken by line AA. Package 100 includes a die 102, die pads 104, and an adhesive 106 coupling the die 102 to the die pads 104. The adhesive 106 may be glue, die attach film (DAF), or some other type or suitable adhesive for coupling the die 102 to a first surface 105 of the die pads 104, which faces the die 102. The die pads 104 also include a second surface 107 opposite the first surface 105. The adhesive 106 extends from the first surface 108 of the die 102 to the first surface 105 of the die pads 104, and is in physical contact with both the first surface 105 of the die pads 104 and the first surface 108 of the die 102. The die pads 104 may be a heat sink that absorbs heat output from the die 102. In some embodiments, adhesive 106 may be a conductive adhesive that electrically couples the die pad 104 to the die 102.

[0038] The bare die 102 includes a first surface 108, a second surface 110 opposite to the first surface 108, a first sidewall 112 extending from the first surface 108 to the second surface 110, and a second sidewall 114 opposite to the first sidewall 112. The second sidewall extends from the first surface 108 to the second surface 110. The first sidewall 112 and the second sidewall 114 are transverse to the first surface 108 and the second surface 110. The first surface 108 and the second surface 110 extend from the first sidewall 112 to the second sidewall 114.

[0039] The die 102 also includes a plurality of contact pads 116 located on a second surface 110, which are coupled to and electrically communicated with active and passive electrical components (not shown) within the die 102. The contact pads 116 provide electrical pathways to and from the active and passive electrical components within the die 102, allowing signals to be transmitted to and from the die 102. For example, the contact pads 116 may provide electrical paths for sending control signals to passive and active components within the die 102, and may also provide electrical paths for data signals to be transmitted from the die 102. Control signals may be transmitted from external components such as control units, memory, controllers, or other similar electronic devices or components. Data signals may be transmitted to external components, such as memory, semiconductor device packages, dies, or other similar electronic devices or components. Each of the contact pads 116 includes a contact surface 118. The contact pads 116 may be multiple conductive pads. The second surface 110 can be the active surface of the bare die 102.

[0040] Encapsulation 100 also includes a sealant 120. For example, sealant 120 may be an epoxy resin material, a plastic material, an insulating material, a non-conductive material, a molding compound, or some other similar or suitable type of sealant material. Sealant 120 may be doped with an additive material that becomes conductive when exposed to the laser, details of which will be provided later in this disclosure. Figures 10A to 10C To provide a more detailed description.

[0041] Sealant 120 encapsulates the bare die pad 104, the bare die 102, and the adhesive 106. Sealant 120 is located on and covers the second surface 107 of the bare die pad 104, and includes a third surface 122 and a fourth surface 124 opposite to the third surface 124. The third (e.g., lower) surface 122 is based on... Figure 1A The orientation of the fourth (e.g., upper) surface 124 is located on the bottom surface of the package 100, and the fourth (e.g., upper) surface 124 is based on... Figure 1AThe orientation of the sealant 120 is located on the top surface of the package 100. The first dimension D1 extends from the third surface 122 of the sealant 120 to the fourth surface 124. For example, the first dimension D1 can range from 350 μm to 1000 μm.

[0042] The sealant 120 also includes a third sidewall 126 extending from the third surface 122 to the fourth surface 124 and a fourth sidewall 128 extending from the third surface 122 to the fourth surface 124. The third sidewall 126 and the fourth sidewall 128 are transverse to the third surface 122 and the fourth surface 124. The third sidewall 126 is based on... Figure 1A The orientation is located on the left side of package 100, and the fourth sidewall is based on Figure 1A Its orientation is located on the right side of package 100.

[0043] A first lead 130 of the package 100 extends outward from the third sidewall 126 of the sealant 120. The first lead 130 includes a first end 132 outside the sealant 120 and a second end 134 inside the sealant 120. The second end 134 is based on... Figure 1A The package 100 shown is laterally adjacent to and spaced apart from the first sidewall 112 of the die 102. The first lead 130 includes a first mounting surface 133 directly adjacent to the first end 132 of the first lead 130.

[0044] A second lead 136 of the package 100 extends outward from the fourth sidewall 128 of the sealant 120. The second lead 136 includes a third end 138 outside the sealant 120 and a fourth end 140 inside the sealant 120. The fourth end 140 is based on... Figure 1A The package 100 shown is laterally adjacent to and spaced apart from the second sidewall 114 of the die 102. The fourth end 140 is separated from the second end 134 by the die 102 within the sealant 120. In other words, the die 102 is located between the second end 134 of the first lead 130 and the fourth end 140 of the second lead 136. The second lead 136 includes a second mounting surface 135 directly adjacent to the third end 138 of the second lead 136.

[0045] One of the plurality of first conductive vias 142 extends into the third surface 122 of the sealant 120 to a corresponding contact pad among the plurality of contact pads 116. Each of the first conductive vias 142 includes a first conductive layer 144 and a second conductive layer 146, the second conductive layer 146 being located on and covering the first conductive layer 144. The thickness of the first conductive layer 144 is less than the thickness of the second conductive layer 146, which is in Figure 1AAs can be easily seen, the first conductive layer 144 can be a backing layer, a laser direct forming (LDS) layer, an LDS mask layer, a seed layer, or some other similar or suitable type of conductive material. The second conductive layer 146 can be an electroplated layer, a deposited layer, or some other similar or suitable type of conductive material. The second conductive layer 146 is separated from the sealant 120 by the first conductive layer 144 on which the second conductive layer 146 is located. Because the first conductive layer 144 can act as a barrier separating the second conductive layer 146 from the sealant 120, the second conductive layer 146 can avoid physical contact with the sealant 120.

[0046] In this embodiment of package 100, the second conductive layer 146 of the plurality of first conductive vias 142 protrudes outward from the third surface 122 of the sealant 120. In some other alternative embodiments of package 100, the second conductive layer 146 may not protrude outward from the sealant 120.

[0047] like Figure 1A As shown, when viewed in a cross-section of package 100, the plurality of first conductive vias 142 have a T-shape. (Reference) Figure 1C The details and dimensions of the multiple first conductive vias 142 are discussed in more detail.

[0048] Multiple second conductive vias 148 extend into the sealant 120 to reach each of the multiple contact pads 116 and to the corresponding ends 134, 140 of the first lead 130 and the second lead 136. For example, based on Figure 1A The second conductive via 148, located on the left side of the package 100, is coupled to the second end 134 of the first lead 130, and based on... Figure 1A The second conductive via 148, located on the right side of the package 100, is coupled to the fourth end 140 of the second lead 136. A plurality of second conductive vias 148 protrude outward from the third surface 122 of the sealant 120. In some embodiments, the plurality of second conductive vias 148 may not protrude outward from the third surface 122 of the sealant 120.

[0049] Each of the plurality of second conductive vias 148 includes a third conductive layer 150 and a fourth conductive layer 152, wherein the fourth conductive layer 152 is located on and covers the third conductive layer 150. The thickness of the third conductive layer 150 is less than the thickness of the fourth conductive layer 152, which is... Figure 1AAs can be easily seen, the third conductive layer 150 can be a backing layer, a laser direct forming (LDS) layer, an LDS mask layer, a seed layer, or some other similar or suitable type of conductive material. The fourth conductive layer 152 can be an electroplated layer, a deposited layer, or some other similar or suitable type of conductive material. The fourth conductive layer 152 is separated from the sealant 120 by the third conductive layer 150 on which the fourth conductive layer 152 is located. Because the third conductive layer 150 can act as a barrier separating the fourth conductive layer 152 from the sealant 120, the fourth conductive layer 152 can avoid physical contact with the sealant 120.

[0050] For the sake of simplicity and brevity in this disclosure, the following discussion will only delve further into the details of the location... Figure 1A Details of the second conductive via 148 on the left. However, it should be readily understood that this discussion applies in a similar manner to the via located on the left. Figure 1A The second conductive via 148 on the right side has similar features to the die 102 and the second lead 136.

[0051] The second conductive via 148 includes a first portion 148a, a second portion 148b, and a third portion 148c. The first portion 148a, the second portion 148b, and the third portion 148c each comprise portions of the third conductive layer 150 and the fourth conductive layer 152. The first portion 148a, the second portion 148b, and the third portion 148c are integrally formed with each other, and at least in this embodiment, the first portion 148a, the second portion 148b, and the third portion 148c are made of a continuous and single material of the third conductive layer 150 and the fourth conductive layer 152. The first portion 148a, the second portion 148b, and the third portion 148c of the second conductive via 148 extend into the third surface 122 of the sealant 120.

[0052] The first portion 148a extends into the third surface 122 of the sealant 120 to reach the first lead 130. The first portion 148a is coupled to the first lead 130. The first portion 148a has a second dimension D2 extending from the first lead 130 to a surface 154 of the second conductive via 148, which is also the surface of the fourth conductive layer 152. The third conductive layer 150 and the fourth conductive layer 152 are located on the first lead 130.

[0053] Package 100 includes a dimension D9 extending from a third surface 122 of sealant 120 to a first mounting surface 133 of first lead 130. Package 100 also includes a dimension D10 extending from the third surface 122 to a mounting surface 135 of second lead 136. In some embodiments, the mounting surface 133 of first lead 130 may be substantially coplanar with the third surface 122 of sealant 120.

[0054] Part 2, 148b, is based on Figure 1AThe second portion extends from the contact surface 118 of the sealant 120 to the leftmost contact pad 116 of the die 102 in the third surface 122. The third portion has a third dimension D3 extending from the contact surface 118 of the leftmost contact pad 116 to the surface 154. The third dimension D3 is smaller than the second dimension D2, which is... Figure 1A It is easy to see from the middle.

[0055] The third portion 148c extends into the third surface 122 of the sealant 120 and terminates within the sealant 120 before reaching the die 102 or the first lead 130. The third portion 148c extends from the first portion 148a to the second portion 148b and electrically couples the first portion 148a to the second portion 148b. The third portion 148c is transverse to the first portion 148a and the second portion 148b of the second conductive via 148. The third portion 148c may be an electrical trace, an electrical connection, or some other similar or analogous electrical structure that couples the first portion 148a to the second portion 148b. The third portion has a fourth dimension D4 extending from the surface 156 of the third conductive layer 150 located between the first portion 148a and the second portion 148b. The fourth dimension D4 is smaller than the second dimension D2 and the third dimension D3.

[0056] The second conductive via 148 protrudes from the third surface 122 of the sealant 120, and the second conductive via 148 includes a surface 154, which is the surface of the fourth conductive layer 152. In this embodiment, surface 154 protrudes from the surface 122 of the sealant 120. In some other embodiments, surface 154 may be substantially coplanar with the third surface 122 of the sealant 120. In some embodiments, surface 154 may be substantially coplanar with the mounting surfaces 133, 135 of the first lead 130 and the second lead 136.

[0057] In some alternative embodiments, when surface 154 is substantially coplanar with the third surface 122 of sealant 120, the end surface 155 of the third conductive layer 150 may be exposed at the third surface 122 of sealant 120. The end surface 155 may be substantially coplanar with the third surface 122 of sealant 120 and the surface 154 of the fourth conductive layer 152.

[0058] Figure 1B The diagram shows... Figure 1A The diagram shows a bottom plan view of package 100. Package 100 includes... Figure 1A Additional leads not visible in the package. In this embodiment, package 100 has four leads. However, in some other alternative embodiments, package 100 may have two, three, five, or any other suitable number of leads.

[0059] like Figure 1BAs shown, the first conductive via 142 is located in the central region of the package 100. The second conductive via 148 is laterally spaced from the first conductive via 142. In other words, the second conductive via 148 is based on... Figure 1B The package 100 shown is positioned to the right and left of the first conductive via 142.

[0060] Figure 1C The diagram shows... Figure 1A The image shows an enlarged enhanced view of the leftmost first conductive via 142 surrounding the periphery. For the sake of brevity and simplicity in this disclosure, only details concerning the leftmost first conductive via 142 are discussed. However, it should be readily understood that the following discussion of the leftmost first conductive via 142 applies to... Figure 1A The rightmost first conductive via 142 is shown.

[0061] The first conductive via 142 includes an exposed surface 158 facing away from the die 102. The exposed surface 158 may be a mounting surface coupled to a solder material for mounting or bonding the package 100 to the substrate 900 (e.g., a printed circuit board, a semiconductor wafer, or some other similar or analogous component). Figure 9 As can be easily seen, as discussed previously, in this embodiment, the first conductive via 142 protrudes outward from the third surface 122 of the sealant 120, such that the exposed surface 158 is outwardly spaced from the third surface 122. In some alternative embodiments, the exposed surface 158 may be substantially coplanar with the third surface 122 of the sealant 120. In some alternative embodiments, when the exposed surface 158 of the second conductive layer 146 is substantially coplanar with the third surface 122 of the sealant, the end surface 168 of the second conductive layer 146, which does not cover the first conductive layer 144, may be substantially coplanar with the third surface 122.

[0062] A first portion 142a of the first conductive via 142 is adjacent to the contact pad 116, and a second portion 142b of the first conductive via 142 is separated from the contact pad 116 by the first portion 142a. The first portion 142a has a first side 160 and a second side 162 opposite to the first side 160. The first side 160 and the second side 162 are transverse to the contact surface 118 of the contact pad 116. The first portion 142a has a fifth dimension D5 extending from the first side 160 to the second side 162. The second portion 142b has a third side 164 and a fourth side 166 opposite to the third side 164. The third side 164 and the fourth side 166 are transverse to the contact surface 118 of the contact pad 116. The second portion 142b has a sixth dimension D6 extending from the third side 164 and the fourth side 166. The sixth dimension D6 is larger than the fifth dimension D5, which is... Figure 1CIt is easy to see from this. The first part 142a and the second part 142b can be cylindrical pillars, rectangular pillars, square pillars, or pillars of some other shape or size that extend into the third surface 122 of the sealant 120 to reach at least one of the contact pads 116. For example, the fifth dimension D5 can range from 15 μm to 80 μm, and the sixth dimension D6 can range from 100 μm to 300 μm.

[0063] The third side 164 and the fourth side 166 include sides of the first conductive layer 144 and the second conductive layer 146. These sides of the first conductive layer 144 and the second conductive layer 146 are substantially coplanar with each other to form the third side 164 and the fourth side 166 of the first conductive via 142.

[0064] The second conductive layer 146 covers the surface 168 of the first conductive layer 144. In other words, surface 168 is the end surface where the first conductive layer 144 terminates. The surface 168 of the second conductive layer 146 is substantially coplanar with the third surface 122 of the sealant 120. The surface 155 of the third conductive layer 150 is similar to the surface 168 of the second conductive layer 146.

[0065] The first conductive layer 144 includes a first portion 144a, a second portion 144b, a third portion 144c, and a fourth portion 144d. The first portion 144a includes a surface 168 and extends into the third surface 122 of the sealant 120, reaching the second portion 144b. The first portion 144a is transverse to the second portion 144b, and the second portion 144b extends to the third portion 144c. The second portion 144b is transverse to the third portion 144c, and the third portion 144c extends to the fourth portion 144d. The third portion 144c is transverse to the fourth portion 144d, and the fourth portion 144d is located on the contact surface 118 of the contact pad 116. The first portion 144a and the second portion 144b define an L-shaped portion adjacent to the third surface 122 of the sealant 120.

[0066] The second conductive layer 146 includes a fifth portion 146a located on and covering the surface 168 of the first portion 144a, a sixth portion 146b located on and covering the second portion 144b, and a seventh portion 146c located on and covering the third portion 144c and the fourth portion 144d. The fifth portion 146a extends to the sixth portion 146b. The sixth portion 146b extends from the fifth portion 146a to the seventh portion 146c. The seventh portion 146c extends from the sixth portion 146b to the fourth portion 144d of the first conductive layer 144.

[0067] Figure 2A The diagram illustrates along Figure 2B A cross-sectional view of an alternative embodiment of package 200 taken from line BB. Figure 2B Is it like this? Figure 2A The image shows a bottom plan view of package 200. For the sake of simplicity and brevity in this disclosure, this document will only discuss the details related to, for example... Figures 1A to 1C The differences or additional features of package 100 compared to package 200 are shown. The same reference numerals are used to indicate differences from those previously mentioned. Figures 1A to 1C The features of package 200 that are the same as or similar to those described in package 100 are shown.

[0068] The sealant 220 for encapsulation 200 is similar to the one mentioned above. Figures 1A to 1C The sealant 120 discussed in the illustrated package 100 is the same as or similar to that of the package 100. However, the sealant 120 differs from that of the package 100, such as... Figure 2A The sealant 220 of the encapsulation 200 shown has a similar structure to that shown in the figure. Figure 1A The sealant 120 of the encapsulation 100 shown has different shapes. The sealant 220 includes a first surface 222, based on... Figure 2A The second surface 223, which is laterally separated from the left side of the first surface 222 by the orientation of the first surface 222, and based on the orientation of the second surface 223, which is laterally separated from the left side ... Figure 2A The sealant 220 also includes a third surface 225, which is laterally separated from the right side of the first surface 222. The sealant 220 further includes a fourth surface 224 opposite to the first surface 222, the second surface 223, and the third surface 225. The first surface 222, the second surface 223, and the third surface 225 may be horizontal surfaces, horizontal surfaces, exposed surfaces, outer surfaces, external surfaces, areas, surface portions, or other similar or comparable types of surfaces.

[0069] The first sidewall 226 of the sealant 220 extends from the second surface 223 to the fourth surface 224. The second sidewall 228 of the sealant extends from the third surface 225 to the fourth surface 224. The first sidewall 226 and the second sidewall 228 are transverse to the first surface 222, the second surface 223 and the third surface 225.

[0070] A first dimension D14 extends from a first surface 222 to a fourth surface 224. A second dimension D15 extends from a second surface 223 to a fourth surface 224. A third dimension D7 extends from a third surface 225 to a fourth surface 224. The first dimension D14 is larger than the second dimension D15 and the third dimension D7. In this embodiment of package 200, the second dimension D15 is substantially equal to the third dimension D7. In some other alternative embodiments of package 200, the second dimension D15 may be smaller than the first dimension D14 and larger than the third dimension D7. In some other alternative embodiments of package 200, the second dimension D15 may be smaller than the first dimension D14 and smaller than the third dimension D7. For example, in some embodiments of package 200, the dimension D14 of package 200 may be in length equal to... Figure 1A The first dimension D1 of the package 100 shown is the same or similar.

[0071] The first inclined surface 227 of the sealant 220 extends from the first surface 222 to the second surface 223 and separates the first surface 222 from the second surface 223. The first inclined surface 227 forms a first angle θ1 with respect to the second surface 223.

[0072] A second inclined surface 229 of the sealant 220 extends from the first surface 222 to the third surface 225 and separates the first surface 222 from the second surface 223. The second inclined surface 229 forms a second angle θ2 relative to the third surface 225. In this embodiment of the package 200, the second angle θ2 is substantially equal to the first angle θ1. In some other alternative embodiments of the package 200, the second angle θ2 may be different from the first angle θ1.

[0073] The first inclined surface 227 and the second inclined surface 229 may be an inclined surface, an inclined level, an exposed inclined surface, an outer inclined surface, an external inclined surface, an inclined region, an inclined surface portion, or some other similar or analogous type of inclined surface.

[0074] like Figure 2B As shown, in this embodiment of package 200, the first inclined surface 227 and the second inclined surface 229 are separate and distinct surfaces separated from each other by the first surface 222. Figure 2B As shown, in this embodiment of package 200, the second surface 223 and the third surface 225 are separate and distinct surfaces separated from each other by the first surface 222, the first inclined surface 227 and the second inclined surface 229.

[0075] In at least one alternative embodiment of package 200, two additional inclined surfaces may be present. These two additional inclined surfaces are separated by a first surface 222, are transverse to the first inclined surface 227 and the second inclined surface 229, and extend from the first inclined surface 227 to the second inclined surface 229. The two additional inclined surfaces connect the first inclined surface 227 and the second inclined surface 229 to form a boundary or periphery around the first surface 222. The two additional inclined surfaces connect the first inclined surface 227 and the second inclined surface 229 to form a continuous single boundary surface or periphery surface around the first surface 222. Further, in this at least one alternative embodiment of package 200, the two additional inclined surfaces are directly adjacent to the two additional surfaces, respectively. The two additional surfaces are transverse to the second surface 223 and the third surface 225, and extend from the second surface 223 to the third surface 225, respectively. The two additional surfaces, together with the second surface 223 and the third surface 225, form a boundary or periphery around the two additional inclined surfaces and the first inclined surface 227 and the second inclined surface 229. The two additional surfaces connect the second surface 223 and the third surface 225 to form a continuous single boundary surface or peripheral surface surrounding the two additional inclined surfaces, as well as the first inclined surface 227 and the second inclined surface 229.

[0076] The first lead 230 of the package 200 includes a first end 232 outside the sealant 220 and a second end 234 encapsulated within the sealant 220. The first lead 230 is based on... Figure 2A The orientation of the lead 230 is located on the left side of package 200. Unlike the first lead 130 of package 100, the first lead 230 of package 200 bends back toward the sealant 220 of package 200, such that the first end 232 of the first lead 230 overlaps with the second surface 223 of the sealant 220. The first lead 230 includes a first mounting surface 233 directly adjacent to the first end 232 of the first lead 230.

[0077] The second lead 236 of package 200 includes a third end 238 outside the sealant 220 and a fourth end 240 inside the sealant 220. The second lead 236 is based on... Figure 2A The orientation of the lead 236 is located on the right side of package 200. Unlike the second lead 136 of package 100, the second lead 236 of package 200 is bent back toward the sealant 220 of package 200, such that the third end 238 of the second lead 236 overlaps with the third surface 225 of the sealant 220. The second lead 236 includes a first mounting surface 235 directly adjacent to the first end 238 of the second lead 236.

[0078] Package 200 includes a dimension D11 extending from a first surface 222 of sealant 220 to a mounting surface 233 of a first lead 230. Package 200 also includes a dimension D12 extending from the first surface 222 to a mounting surface 235 of a second lead 236. Dimension D11 is larger than dimension D12.

[0079] Multiple first conductive vias 242 extend into the first surface 222 of the sealant 220 to the contact surface 118 of the contact pads 116 of the bare die 102 encapsulated within the sealant 220. The bare die 102 is coupled to the bare die pads 104 by adhesive 106, and both the bare die pads 104 and the adhesive 106 are encapsulated within the sealant 220. The first conductive vias 242 include a first conductive layer 244 and a second conductive layer 246.

[0080] The first conductive via 242 of package 200 is the same as or similar to the first conductive via 142 of package 100. However, unlike the first conductive via 142 in package 100, the first conductive via 242 in package 200 is relatively shorter. The first conductive layer 244 of package 200 is the same as or similar to the first conductive layer 144 of package 100. The second conductive layer 246 of package 200 is the same as or similar to the second conductive layer 246 of package 200. Therefore, for the sake of simplicity and brevity of the invention, the details of the first conductive via 142, the first conductive layer 144, and the second conductive layer 246 will not be discussed in more detail.

[0081] Multiple second conductive vias 248 extend into the sealant 220 and are coupled to respective contact pads 116 in the die 102 and to the corresponding ends of the first lead 230 and the second lead 236. For example, based on Figure 2A The second conductive via 248, located on the left side of the package 200, is coupled to the second end 234 of the first lead 230, and based on... Figure 2A The second conductive via 248, located on the right side of the package 200, is coupled to the fourth end 240 of the second lead 236.

[0082] A second conductive via 248 located on the left side of package 200 extends to the third surface 122 and the second surface 223. A second conductive via 248 located on the right side of package 200 extends to the second surface 222 and the third surface 225 of package 200.

[0083] Each of the plurality of second conductive vias 248 includes a third conductive layer 250 and a fourth conductive layer 252, the fourth conductive layer 252 being located on and covering the third conductive layer 250. For example... Figure 1AAs shown, the third conductive layer 250 and the fourth conductive layer 252 of package 200 are the same as or similar to the third conductive layer 150 and the fourth conductive layer 152 of package 100. Therefore, for the sake of brevity and simplicity of this disclosure, the details of the third conductive layer 150 and the fourth conductive layer 152 will not be discussed in detail herein.

[0084] For the sake of simplicity and brevity in this disclosure, the following discussion will only go into further detail. Figure 2A Details of the second conductive via 248 on the left. However, it should be readily understood that this discussion applies in a similar manner. Figure 2A The second conductive via 248 on the right side has similar features to the die 102 and the second lead 236.

[0085] The second conductive via 248 includes a first portion 248a, a second portion 248b, and a third portion 248c. The first portion 248a, the second portion 248b, and the third portion 248c each comprise portions of a third conductive layer 250 and a fourth conductive layer 252. The first portion 248a, the second portion 248b, and the third portion 248c are integrally formed with each other, and at least in this embodiment, the first portion 248a, the second portion 248b, and the third portion 248c are made of a continuous single material of the third conductive layer 250 and the fourth conductive layer 252.

[0086] The first portion 248a extends into the second surface 223 of the sealant 220 to reach the first lead 230. The first portion 248a is coupled to the first lead 230. A first conductive layer 250 and a second conductive layer 252 are located on the first lead 230.

[0087] based on Figure 2A In the orientation of the first part 248a, the second part 248b extends into the first surface 222 of the sealant 220 and reaches the contact surface 118 of the leftmost contact pad 116 of the die 102. The shape and size of the second part 248b are the same as or similar to those of the first part 248a.

[0088] The third portion 248c extends into the first surface 222, the second surface 223, and the first inclined surface 227, and terminates within the sealant 220 before reaching the die 102 or the first lead 230. The third portion 248c extends from the first portion 248a to the second portion 248b and electrically couples the first portion 248a to the second portion 248b. A first end of the third portion 248c extends into the first inclined surface 227 and extends laterally to the second portion 248b of the second conductive via 248. The third portion 248c may be an electrical trace, an electrical connection, or some other similar or analogous electrical structure coupling the first portion 248a and the second portion 248b. In this embodiment, a second segment of the third portion extends into the first surface 222, and a third segment of the third portion extends into the second surface 223. In some other alternative embodiments, the third segment may not exist; instead, the first and second segments may be the only existing segments when the first portion 248a is directly adjacent to the first inclined surface 227.

[0089] Figure 3 The illustration shows the features and Figures 1A to 1C The cross-sections of alternative embodiments of the package 300, which have the same or similar features as the package 100 shown, are illustrated. For the sake of simplicity and brevity, this document discusses only those embodiments of the package 300 in more detail. Figures 1A to 1C Differences or additional features of package 100 compared to package 300 shown. The same reference numerals are used to indicate differences or additional features compared to previously shown packages. Figures 1A to 1C The features of package 300 are the same or similar to those described in package 100.

[0090] Unlike package 100, package 300 includes a first electrical connection 302 and a second electrical connection 304 encapsulated within a sealant 120. For example... Figures 1A to 1C As shown, the first electrical connection 302 and the second electrical connection 304 have replaced the second conductive via 148 of the package 100. The first electrical connection 302 and the second electrical connection 304 may be wires, wire joints, or some other suitable or similar conductive structure or component that couple the first lead 130 and the second lead 136 to the corresponding contact pads 116 in the contact pads 116 of the die 102, respectively.

[0091] like Figure 3 As shown, based on the orientation of package 300, the first end of the first electrical connection 302 is coupled to the contact surface 118 of the leftmost contact pad 116 of the die 102. The second end of the first electrical connection 302 is coupled to the surface of the first lead 130.

[0092] like Figure 3As shown, based on the orientation of package 300, the first end of the second electrical connection 304 is coupled to the contact surface 118 of the rightmost contact pad 116 of the die 102. The second end of the second electrical connection 304 is coupled to the surface of the second lead 136.

[0093] Figure 4 The illustration shows the features and Figures 1A to 1C The cross-sections of alternative embodiments of the package 400, which have the same or similar features as the package 100 shown, are illustrated. For the sake of simplicity and brevity, this document discusses only those embodiments of the package 400 in more detail. Figures 1A to 1C Differences or additional features of package 100 compared to package 400 shown. The same reference numerals are used to indicate differences or additional features compared to previously shown packages. Figures 1A to 1C The features of package 400 are the same or similar to those described in package 100.

[0094] Unlike package 100 in which the second surface 107 of the die pad 104 is covered by sealant 120, the second surface 107 of the die pad 104 is substantially coplanar with the fourth surface 124 of the sealant 120 of package 400. Figures 1A to 1C Compared to similar thicknesses of sealant 120 in package 100, the sealant 120 in package 400 has a smaller thickness extending from the third surface 122 to the fourth surface 124.

[0095] Figure 5 The illustration shows the features and Figures 1A to 1C The cross-sections of alternative embodiments of package 500 with features identical or similar to those of package 300 are shown. For the sake of simplicity and brevity in this disclosure, only those with features similar to package 500 are discussed in more detail herein. Figure 3 The differences or additional features of package 300 compared to package 500 shown. The same reference numerals are used to indicate differences from previous descriptions. Figure 3 The features of package 500 are the same or similar to those described in package 300.

[0096] Unlike package 300, where the second surface 107 of the die pad 104 is covered by sealant 120, the second surface 107 of the die pad 104 is substantially coplanar with the fourth surface 124 of the sealant 120 of package 500. Figure 3 Compared to similar thicknesses of sealant 120 in package 300, the sealant 120 in package 500 has a smaller thickness extending from the third surface 122 to the fourth surface 124.

[0097] Figure 6 The illustration shows the features and Figure 2A and Figure 2B The cross-sections of alternative embodiments of package 600, which have the same or similar features as package 200, are shown. For the sake of simplicity and brevity in this disclosure, only those with similar features are discussed in more detail herein. Figure 2A and Figure 2B The differences or additional features of package 200 compared to package 600 are shown. The same reference numerals are used to indicate differences from previously mentioned packages. Figure 2A and Figure 2B The features of package 600 are the same or similar to those described in package 200.

[0098] Unlike package 200, package 600 includes a first electrical connection 402 and a second electrical connection 404 encapsulated within a sealant 120. For example... Figure 2A and Figure 2B As shown, the first electrical connection 402 and the second electrical connection 404 have replaced the second conductive via 248 of the package 200. The first electrical connection 402 and the second electrical connection 404 may be wires, wire joints, or some other suitable or similar conductive structure or component that couple the first lead 230 and the second lead 236 to the corresponding contact pads 116 in the contact pads 116 of the die 102, respectively.

[0099] like Figure 6 As shown, based on the orientation of package 600, the first end of the first electrical connection 402 is coupled to the contact surface 118 of the leftmost contact pad 116 of the die 102. The second end of the first electrical connection 402 is coupled to the surface of the first lead 230. In this embodiment of package 600, the first electrical connection 402 overlaps with the first surface 222, the second surface 223, and the first inclined surface 227. In some other alternative embodiments of this package 600, if the second end of the first electrical connection 402 is more than... Figure 6 If the position shown further to the right is coupled to the surface of the first lead 230, then the first electrical connection 402 may not overlap with the first surface 223. For example, if the second end 234 of the first lead 230 extends further into the package 600 than shown, then the first electrical connection 230 may not overlap with the first surface 223 of the sealant 220.

[0100] like Figure 6 As shown, based on the orientation of package 600, the first end of the second electrical connection 404 is coupled to the contact surface 118 of the rightmost contact pad 116 of the die 102. The second end of the second electrical connection 404 is coupled to the surface of the second lead 236. In this embodiment of package 600, the second electrical connection 404 overlaps with the first surface 222, the third surface 225, and the second inclined surface 229. In some other alternative embodiments of package 600, if the second end of the second electrical connection 404 is more than... Figure 6If the position shown is coupled to the surface of the second lead 236 further to the left, then the second electrical connection 404 may not overlap with the first surface 223. For example, if the fourth end 240 of the second lead 236 extends further into the package 600 than shown, then the second electrical connection 404 may not overlap with the third surface 225 of the sealant 220.

[0101] Figure 7 The illustration shows the features and Figure 2A and Figure 2B The cross-sections of alternative embodiments of package 700 with features identical or similar to those of package 200 are shown. For the sake of simplicity and brevity of this disclosure, only those with features similar to those shown are discussed in more detail herein. Figure 2A and Figure 2B The differences or additional features of package 200 compared to package 700 are shown. The same reference numerals are used to indicate differences from previously mentioned packages. Figure 2A and Figure 2B The features of package 700 are the same or similar to those described in package 200.

[0102] Unlike package 200 in which the second surface 107 of the bare pad 104 is covered by sealant 220, the second surface 107 of the bare pad 104 is substantially coplanar with the second surface 224 of the sealant 220 of package 700. Figure 2A and Figure 2B Compared to the similar thickness of the sealant 220 in the package 200 shown, the sealant 220 in the package 700 has a smaller thickness extending from the first surface 222 to the second surface 224.

[0103] Figure 8 The illustration shows the features and Figure 6 The cross-sections of alternative embodiments of the package 800, which have the same or similar features as the package 600 shown, are illustrated. For the sake of simplicity and brevity in this disclosure, only those related to the package 800 are discussed in more detail herein. Figure 6 The differences or additional features of package 600 compared to package 800 are shown. The same reference numerals are used to indicate differences from previous descriptions. Figure 6 The features of package 800 are the same or similar to those described in package 600.

[0104] Unlike package 600, where the second surface 107 of the bare pad 104 is covered by sealant 220, the second surface 107 of the bare pad 104 is substantially coplanar with the second surface 224 of the sealant 220 of package 800. Figure 2A and Figure 2B Compared to similar thicknesses of sealant 220 in package 200, the sealant 220 in package 700 has a smaller thickness extending from the first surface 222 to the second surface 224.

[0105] Figure 9 The illustration shows a cross-section of a package 100 mounted, coupled, or bonded to a substrate 900. The substrate 900 may be a printed circuit board (PCB), a support substrate, or some other suitable electronic structure or component. The substrate 900 includes a first surface 902 and a second surface 904 opposite to the first surface 902. A plurality of bonding pads 906 are located on the first surface 902 of the substrate 900.

[0106] Multiple solder balls 908 couple package 100 to multiple bonding pads 906 of substrate 900. For example, based on... Figure 9 The solder ball 908, located on the far left of the package 100, couples the first lead 130 to a surface based on... Figure 9 The orientation of the package 100 shown is located at the leftmost bonding pad 906. Based on... Figure 9 The solder ball 908 on the far right of the package 100 shown couples the second lead 136 to a base plate as shown in the diagram. Figure 9 The package 100 shown is positioned at the rightmost bonding pad 906. The centrally located solder ball 908, positioned between the leftmost and rightmost solder balls 908, couples the first conductive via 142 to the centrally located bonding pad 906.

[0107] The third surface 122 of package 100 is spaced apart from the first surface 902 of substrate 900 by a dimension D8. Dimension D8 is determined by dimensions D9 and D10, as previously discussed. Figures 1A to 1C The package 100 shown is discussed. Similarly, if package 200 is mounted to substrate 900, dimension D8 may be located between the first surface 222 of package 200 and the first surface 902 of substrate 900. Dimension D8 is determined by dimensions D11 and D12, as previously discussed regarding... Figure 2A and Figure 2B The package 200 shown is discussed. For example, the size D8 can range from 20 μm (micrometers) to 80 μm (micrometers).

[0108] Although the following discussion pertains to package 100 coupled to substrate 900, it should be understood that the following discussion also applies to other packages 200, 300, 400, 500, 600, 700, and 800 of this disclosure. Figure 9As shown, the mounting surface 133 of the first lead 130 and the mounting surface 135 of the second lead 136 of the package 100 are further away from the second surface 110 of the die 102 than the exposed surface 158 of the first conductive via 142 in the direction from the second surface 110 of the die 102 to the third surface 122 of the sealant 120. When the package 100 is mounted to the contact pad 906 of the printed circuit board 900 using solder balls 908, the first lead 130 and the second lead 136 may be partially or completely enclosed in their respective or corresponding solder balls 908, and the portions of the first conductive via 142 that protrude from the third surface 122 of the sealant 120 may also be partially or completely enclosed in their respective or corresponding solder balls 908.

[0109] Coupled to based Figure 9 The solder ball 908 of the first conductive via 142, located on the far left, is separated by a dimension D13 from the leftmost solder ball 908 coupled to the first lead 130. To increase dimension D13, the length of the lead 130 can be increased, and to decrease dimension D13, the length of the first lead 130 can be decreased. It should be readily understood that this discussion also applies to the second lead and the other corresponding solder balls 908 in the plurality of solder balls 908.

[0110] Dimensions D8 and D13 can be selected based on the characteristics, quantity, and quality of the environments that package 100 may be exposed to. For example, if package 100 is exposed to rapid temperature changes from cold to hot or vice versa, components of package 100 will expand or contract. For example, sealant 120, leads 130, 136, and first conductive via 142 and second conductive via 148 may expand and contract at different amounts and rates. These differences in expansion and contraction between these components of package 100 may cause leads 130, 136 to crack, break, or delaminate with solder balls 908. Such expansion and contraction at sidewalls 126, 128 is typically different from that at first conductive via 142, and this difference in expansion and contraction increases the likelihood of failure or defects. However, by optimizing dimensions D8 and D13, first leads 130 and second leads 136 can absorb the stress and strain caused by expansion and contraction near the sealant sidewalls 126, 128, and reduce the likelihood of failure within package 100 due to these types of defects.

[0111] Figures 10A to 10C The diagram shows... Figures 1A to 1C A cross-sectional view of the manufacturing method of embodiment 1000 of the package 100 shown. Figure 10AAs shown, multiple sealant portions 1002 are formed around and above the lead frame 1004. The lead frame 1004 includes multiple die pad portions 1006 and multiple lead portions 1008. Each corresponding sealant portion 1002 of the multiple sealant portions 1002 encapsulates a corresponding die 1010 of a plurality of dies 1010, multiple adhesive portions 1012, and multiple die pad portions 1006 of the lead frame 1004. The sealant portions 1002 also encapsulate the ends 1014 of the multiple lead portions 1008.

[0112] As previously mentioned Figures 1A to 1C As described in the encapsulation 100 shown, the sealant portion 1002 corresponds to the sealant 120. (As previously mentioned...) Figures 1A to 1C As described in the package 100 shown, the die pad portion 1006 and the lead portion 1008 correspond to the die pad 104 and the first lead 130 and the second lead 136, respectively. (As previously mentioned...) Figures 1A to 1C As described in the package 100 shown, die 1010 corresponds to die 102. As previously discussed... Figures 1A to 1C As described in the encapsulation 100, the adhesive portion 1012 corresponds to the adhesive 106. As... Figures 1A to 1C As shown, the encapsulated end 1014 in the sealant portion 1002 corresponds to the ends 134, 140 of the first lead 130 and the second lead 136 of the package 100.

[0113] exist Figure 10A In the illustrated steps, adhesive portion 1012 is coupled to the die pad portion 1006 of leadframe 1004, and then die 1010 is coupled to adhesive portion 1012. Adhesive portion 1012 can be formed by applying adhesive portion 1012 using a machine that dispenses, extrudes, sputters, or applies adhesive portion 1012 to die pad portion 1006 using some other similar or suitable technique. Die 1010 can then be placed onto adhesive portion 1012 by a pick-and-place machine that picks up die 1010 and places die 1010 onto adhesive portion 1012. This process couples die 1010 to die pad portion 1006 via adhesive portion 1012.

[0114] After the die 1010 has been coupled to the die pad portion 1006 using the adhesive portion 1012, a sealant portion 1002 is formed encapsulating the die pad portion 1006, the die 1010, the adhesive portion 1012, and the end 1014 of the lead portion 1008. The sealant portion 1002 can be formed by injection molding, compression molding, die forming, or some other similar or suitable technique for forming the sealant portion 1002. For example, a first (e.g., upper) die tool (not shown) can be positioned on a first side of the lead frame 1004, and a second (e.g., lower) die tool (not shown) can be positioned on a second side of the lead frame 1004. Once the first and second dies are positioned, sealant can be injected into the space between the first and second die tools to form the sealant portion 1002 surrounding the die pad portion 1006, the die 1010, the adhesive portion 1012, and the lead end 1014. The sealant portion 1002 can then be cured within the first and second molding tools, such that the sealant portion 1002 hardens and becomes sufficiently cured that when the first and second molding tools are removed, the sealant portion 1012 retains its shape without deformation. The sealant can be a molding compound, resin, epoxy resin, or some other similar or suitable material for encapsulating the die pad portion 1006, the die 1010, the adhesive portion 1012, and the end 1014 of the lead portion 1008.

[0115] like Figure 10B As shown, after the sealant portion 1002 has been formed, it is patterned using a laser direct forming (LDS) process. The sealant portion 1002 is a doped sealant material, and the doped sealant material includes additive materials that are activated (e.g., become conductive) when exposed to a laser. For example, the additive material can be copper, silver, an alloy, or some other type of material that becomes conductive when exposed to a laser. For example, the additive material can be a dopant material in the sealant portion 1002, such as a non-conductive inorganic metal compound. When the non-conductive inorganic metal compound within the sealant portion 1002 is exposed to a laser, a chemical reaction occurs, and the non-conductive inorganic metal compound becomes a conductive metal compound.

[0116] For example, sealant portion 1002 may be made of LDS-compatible polymers (such as KMC-9200 from Shin Etsu or EME-L series from Sumikon) or may be some other type of LDS-compatible polymer, resin, molding compound or sealant material.

[0117] like Figure 10BAs shown, a plurality of first openings 1016 and a plurality of second openings 1018 are formed in the sealant portion 1002, extending into the surface 1020 of the sealant portion 1002 to reach the surface 1023 of the contact pad 1022 of the bare die 1010. Figures 1A to 1C As shown, surface 1020 corresponds to the third surface 122 of the sealant 120 of the package 100. (As...) Figures 1A to 1C As shown, the contact pads 1022 of the die 1010 correspond to the contact pads 1022 of the die 102 of the package 100. For example... Figures 1A to 1C As shown, the surface 1023 of the contact pad 1022 corresponds to the surface 118 of the contact pad 116 of the package 100.

[0118] A plurality of first openings 1016 and second openings 1018 are formed by moving a laser across a surface 1020 of the sealant portion 1002 to expose portions of the sealant portion 1002 to the laser (not shown). The laser removes portions of the sealant portion 1002, thereby forming the first openings 1016 and second openings 1018. After forming the plurality of first openings 1016 and second openings 1018, a plurality of first conductive layers 1024 and a plurality of second conductive layers 1026 are formed. The plurality of first conductive layers 1024 are aligned with the plurality of first openings 1016, and the plurality of second conductive layers 1026 are aligned with the plurality of second openings 1018. The first conductive layers 1024 and second conductive layers 1026 are located on a surface 1023 of the contact pad and are coupled to that surface 1022.

[0119] As the laser moves across surface 1020, thereby removing portions of sealant portion 1002, the surfaces defined by the laser defining the first opening 1016 and the second opening 1018 can be micro-roughened surfaces, containing small micro-pits, micro-grooves, and micro-voids. These micro-roughened surfaces allow conductive material to be more easily formed and bonded to these micro-roughened surfaces of the sealant portion 1002 in the first opening 1016 and the second opening 1018 during the electroplating step, which will at least relative to Figure 10C Let's discuss this in more detail.

[0120] A laser moves along the surface 1020 of the sealant portion in a selected or programmed manner to form a first opening 1016 and a second opening 1018. However, the laser can move at different speeds and remain stationary at positions along the surface 1020 for different amounts of time to form the first and second openings. For example, the laser can move along the surface 1020 of the sealant portion 1002 at a first speed at a position shallower than the first opening 1016 and the second opening 1018 relative to other deeper positions. Alternatively, the laser can move along the surface 1020 of the sealant portion 1002 at a second speed at a deeper position than the first opening 1016 and the second opening 1018. The first speed is greater than the second speed. Similarly, the laser can remain at a shallower position of the first opening 1016 and the second opening 1018 for a first time period, and the laser can remain at a deeper position of the first opening 1016 and the second opening 1018 for a second time period. The first time period is shorter than the second time period. In other words, the laser moves continuously along the surface 1020 of the sealant portion 1002 at different positions, at different speeds, and for selected time periods relative to the size and shape of the first opening 1016 and the second opening 1018, in a selected manner, to form the first opening 1016 and the second opening 1018.

[0121] like Figures 1A to 1C As shown, the first conductive layer 1024 corresponds to the first conductive layer 144 of the package 100. Figures 1A to 1C As shown, the second conductive layer 1026 corresponds to the third conductive layer 150 of the package 100. Figures 1A to 1C As shown, the first opening 1016 corresponds to the first conductive via 142 of the package 100. Figures 1A to 1C As shown, the second opening 1024 corresponds to the second conductive via 148 of the package 100.

[0122] After forming the first opening 1016 and the second opening 1018, and the first conductive layer 1024 and the second conductive layer 1026, electroplating processes are performed on the first conductive layer 1024 and the second conductive layer 1026, respectively, to form a third conductive layer 1028 and a fourth conductive layer 1030 in the first opening 1016 and the second opening 1018, respectively. The third conductive layer 1028 and the fourth conductive layer 1030 fill the first opening 1016 and the second opening 1018, respectively. The result of this electroplating process is... Figure 10C It is easy to see that the first conductive via 1032 and the second conductive via 1034 are located in the sealant 1002 and exposed on the surface 1022 of the sealant 1002. The first conductive via 1032 includes conductive layers in the first conductive layer 1024 and the third conductive layers 1024, 1028, and the second conductive via 1034 includes conductive layers in the second conductive layer 1024 and the fourth conductive layer 1034.

[0123] like Figures 1A to 1C As shown, the third conductive layer 1028 corresponds to the second conductive layer 146 of the first conductive via 142 of the package 100. Figures 1A to 1C As shown, the fourth conductive layer 1030 corresponds to the fourth conductive layer 152 of the package 100. Figures 1A to 1C As shown, the first conductive via 1032 corresponds to the first conductive via 142 of the package 100. Figures 1A to 1C As shown, the second conductive via 1034 corresponds to the second conductive via 148 of the package 100.

[0124] Electroplating processes can be either electroless electroplating or chemical electroplating, such as... Figure 10B The component shown is placed in a bath containing a conductive material such as silver, gold, nickel, alloy, or other conductive materials suitable for electroless plating or similar processes. In the electroless plating bath, the conductive material is attracted and coupled to the first conductive layer 1024 and the second conductive layer 1026. After the electroless plating process is completed, a third conductive layer 1028 and a fourth conductive layer 1030 are formed on and coupled to the first conductive layer 1024 and the second conductive layer 1026, respectively. After the electroless plating process is completed, the third conductive layer 1028 and the fourth conductive layer 1030 are formed in and fill the first opening 1016 and the second opening 1018, respectively.

[0125] By forming a third conductive layer 1028 and a fourth conductive layer 1030, a first conductive via 1032 and a second conductive via 1034 are formed, respectively. The first conductive via 1028 and the second conductive via 1030 are electrical connections between the contact pad 1022 and the lead portion 1008 of the lead frame 1004.

[0126] After forming the third conductive layer 1028 and the fourth conductive layer 1030 to form the first conductive via 1032 and the second conductive via 1034, the lead portion 1008 is cut using a cutting tool such as a saw, a laser, or some other suitable or similar cutting tool. Figure 10C As shown, lead portion 1008 is cut at dashed line 1036. The cutting of lead portion 1008 also cuts package 100. Lead portion 1008 can be bent during the cutting process or in an additional step. Once cut, lead portion 1008 and... Figures 1A to 1C The first lead 130 and the second lead 136 shown are the same or similar.

[0127] like Figure 4The alternative embodiment of the package 400 shown can be derived from... Figures 10A to 10C An alternative embodiment of manufacturing method 1000, which is the same as or similar to the manufacturing method shown, is formed. However, at some point during manufacturing method 1000 or at the end of manufacturing method 1000, an additional grinding step is performed, in which the surface 1003 of the sealant 1002 opposite to surface 1022 is worn away. During this back-side grinding step, the surface 1007 of the die pad 1006 is not covered and exposed, such that the surface 1007 of the die pad 1006 is substantially coplanar with the surface 1003 of the sealant.

[0128] like Figure 4 As shown, surface 1007 of the die pad 1006 corresponds to surface 107 of the die pad 104 of the package 400. Figure 4 As shown, surface 1003 of sealant 1002 corresponds to surface 124 of sealant 120.

[0129] Figure 11 Involving such as Figure 3 An alternative embodiment of the manufacturing method 1100 of the alternative embodiment of the package 300 shown. Manufacturing method 1100 and as... Figures 10A to 10C The manufacturing method of the package 100 shown is the same as or similar to that of the manufacturing method 1000. Therefore, for the sake of simplicity and brevity of this disclosure, only the differences or additional features of the manufacturing method 1100 relative to the manufacturing method 1000 are discussed in more detail herein.

[0130] and Figures 10A to 10C The manufacturing method 1000 of the package 100 shown differs from that of the method 1000, forming a plurality of wires 1102 that couple at least one of the contact pads 1022 to at least one of the lead portions 1008 in the lead portion 1008. The wires 1102 then pass through... Figure 10A The same or similar sealant portion 1002 discussed is encapsulated and covered.

[0131] Figures 12A to 12C The diagram shows... Figure 2A and Figure 2B A cross-sectional view of an embodiment of the manufacturing method 1200 of the illustrated package 200. During method manufacturing 1000, the same reference numerals are used to indicate references to previously shown... Figures 1A to 1C The features described in the package 100 shown are the same or similar to those features. For example... Figures 10A to 10C As shown, the manufacturing method 1200 of package 200 is the same as or similar to the manufacturing method 1000 of package 100. Figures 10A to 10C As shown, for the same or similar features, Figure 12A and Figure 12BThe same or similar reference numerals are used in the accompanying drawings. Therefore, for the sake of simplicity and brevity of this disclosure, only the different or additional features are discussed in more detail herein.

[0132] Similar to manufacturing method 1000, sealant portion 1202 is formed in the same or similar manner as sealant portion 1002. However, unlike sealant portion 1202, sealant portion 1202 is formed having a first surface 1204, a second surface 1206, an inclined surface 1208 extending from the first surface 1204 to the second surface 1206, and a fourth surface 1210 opposite to the first inclined surface 1204, the second inclined surface 1206, and the inclined surface 1208. Although the shape and size of sealant portion 1202 are similar to... Figures 10A to 10C The sealant portion 1002 shown has a different shape and size, but as... Figure 12A and Figure 12B The sealant portion 1202 shown is as follows Figures 10A to 10C The sealant portion 1002 shown is the same as or similar to that shown.

[0133] In such Figure 12A After the sealant portion 1202 is formed, the sealant portion 1202 is patterned using an LDS process, which is similar to the previously described process. Figure 10B The LDS process shown and discussed is the same as or similar to that described. Therefore, for the sake of simplicity and brevity of this disclosure, only the process described in more detail is similar to that described in the present paper. Figure 10B Compared to the LDS process in China Figure 12B Differences or additional features of the LDS process in the process.

[0134] The laser moves along the first surface 1204, the second surface 1206, and the inclined surface 1208 in the same or similar manner as it moves along the surface 1022 of the sealant portion 1002. For example... Figure 10B As shown, similar to the formation of the first conductive layer 1024 and the second conductive layer 1026, as well as the first opening 1016 and the second opening 1018, the first conductive layer 1212 and the second conductive layer 1214 are formed in connection with the first opening 1016 and the second opening 1018. The first conductive layer 1212 and the second conductive layer 1214 are aligned with the first opening 1216 and the second opening 1218.

[0135] After forming the first conductive layer 1212 and the second conductive layer 1214, as well as the first opening 1216 and the second opening 1218, an electroplating step is performed to form a third conductive layer 1220 and a fourth conductive layer 1222 that fill the first opening 1216 and the second opening 1218, respectively. The third conductive layer 1220 is located on and coupled to the corresponding first conductive layer 1212 in the first conductive layer 1212, and the fourth conductive layer 1222 is located on and coupled to the corresponding second conductive layer 1214 in the second conductive layer 1214. (This is in accordance with the previous...) Figure 10C The third conductive layer 1028 and the fourth conductive layer 1030 discussed herein are formed in the same or similar manner as the third conductive layer 1220 and the fourth conductive layer 1222. Therefore, for the sake of simplicity and brevity of this disclosure, the formation of the third conductive layer 1220 and the fourth conductive layer 1222 will not be discussed in further detail herein.

[0136] After the third conductive layer 1220 and the fourth conductive layer 1222 are formed, the lead portion 1008 is at the dashed line 1036 to align with the previously mentioned... Figure 10C The same or similar methods discussed are used to cut the lead portion 100 to form the package 100 of this disclosure. Therefore, for the sake of simplicity and brevity of this disclosure, the cutting of the lead portion 1008 will not be discussed in further detail herein.

[0137] Although the manufacturing methods of each embodiment of the embodiments of packages 100, 200, 300, 400, 500, 600, 700, and 800 are not discussed in detail herein, it should be understood that the above-described steps and processes in the embodiments of manufacturing methods 1000, 1100, and 1200 may be reorganized or performed in slightly different ways to form packages 100, 200, 300, 400, 500, 600, 700, and 800, as well as additional embodiments not shown in this disclosure.

[0138] Compared to conventional manufacturing methods that utilize multiple steps for forming multilayer packages, the manufacturing methods for packages 100, 1100, and 1200 reduce the manufacturing cost of packages 100, 200, 300, 400, 500, 600, 700, and 800. The LDS process described in this disclosure is relatively inexpensive compared to conventional manufacturing methods. For example, conventional methods for manufacturing packages without using an LDS process, as described in this disclosure, may include bath steps, etching steps, patterning steps, deposition steps, dicing steps, and combinations of other suitable manufacturing steps. However, as more and more steps are added to conventional manufacturing methods to form increasingly complex packages, the processes used to utilize these conventional manufacturing methods increase significantly. Therefore, because there are fewer steps compared to conventional manufacturing methods for other similar or analogous conventional packages, the ability to use the LDS process described in this disclosure to form packages 100, 200, 300, 400, 500, 600, 700, and 800 of this disclosure reduces costs and shortens manufacturing time.

[0139] The various embodiments described above can be combined to provide other embodiments. If desired, aspects of the embodiments can be modified to employ concepts from various patents, applications, and publications to provide yet another embodiment.

[0140] These and other changes can be made to the embodiments based on the specific implementation described above. Generally, the terminology used in the following claims should not be construed as limiting the claims to the specific embodiments disclosed in the specification and claims, but should be interpreted to include all possible embodiments together with their equivalents to the full scope of the claims. Therefore, the claims are not limited to this disclosure.

Claims

1. A semiconductor device, comprising: bare die pads; A bare die, located on and coupled to the bare die pads, the bare die including a first conductive pad and a second conductive pad; A resin, located around the die and the die pads, the resin including sidewalls and a first surface transverse to the sidewalls, wherein the resin is doped with a non-conductive metal inorganic compound, wherein the non-conductive metal inorganic compound is configured to transform into a conductive metal material when irradiated and activated by a laser. A lead wire extends into the sidewall of the resin, the lead wire having a first end located in the resin between the bare die and the sidewall of the resin; Conductive traces are located on the first surface of the resin; A first conductive via extends into the first surface of the resin to reach the first conductive pad; The second conductive via extends from the second conductive pad through the resin to the conductive trace; as well as A third conductive via extends from the lead through the resin to the conductive trace.

2. The semiconductor device of claim 1, wherein the lead further includes a second end opposite to the first end, the second end being located outside the resin.

3. The semiconductor device of claim 2, wherein the second end overlaps with the first surface of the resin.

4. The semiconductor device according to claim 1, wherein... The resin has a second surface opposite to the first surface; and The bare die pad has a third surface exposed from the second surface of the resin.

5. The semiconductor device of claim 1, wherein the first surface further comprises: The first surface portion is spaced apart from the bare die in a first direction from the bare die toward the first surface; A second surface portion is located around the first surface portion, and the second surface portion is closer to the bare die in the first direction than the first surface portion; as well as An inclined surface portion extends from the first surface portion to the second surface portion, the inclined surface portion being transverse to the first surface portion and the second surface portion.

6. The semiconductor device of claim 5, wherein the lead further includes a second end opposite to the first end, the second end partially overlapping the second surface.

7. A semiconductor device, comprising: The resin includes a first side, a second side opposite to the first side, and a sidewall transverse to the first side and the second side, the sidewall extending from the first side to the second side, wherein the first side of the resin includes: A first surface, spaced apart from the die in a first direction from the die toward the first side; A second surface, located around the first surface, is closer to the die in the first direction than the first surface; and An inclined surface extending from the first surface to the second surface, the inclined surface being transverse to the first surface and the second surface; The bare die pads are located in the resin and include the mounting surface; The die is located in the resin and is coupled to the mounting surface of the die pads. The die includes an active surface, a first conductive pad at the active surface, and a second conductive pad at the active surface. A lead has a first end and a second end, the first end being located in the resin between the die and the sidewall of the resin, and the first end being located between the mounting surface of the die pad and the active surface of the die, the second end being opposite to the first end and extending beyond the first side of the resin; A conductive structure extending along the first side of the resin, the conductive structure comprising: A first conductive via extends into the first surface of the first side of the resin to reach the first conductive pad and is coupled to the first conductive pad. A second conductive via extends into the second surface of the resin on the first side to reach the lead and is coupled to the lead; and A conductive trace extends from the first conductive via to the second conductive via and is exposed in the resin, the conductive trace extending along the inclined surface of the first side of the resin; A third conductive via extends into the first side of the resin to reach the second conductive pad of the die. The third conductive via is coupled to the second conductive pad and includes an exposed surface at the first side, which is aligned with the die.

8. The semiconductor device of claim 7, wherein the lead further includes a second end opposite to the first end, the second end overlapping the second surface.

9. A method for manufacturing a semiconductor, comprising: Couple the bare die to the bare die pad portion of the leadframe; A resin doped with conductive additive material is formed on the bare die and the bare die pads; A first opening extending into the lead portion of the lead frame and a second opening extending into the bare die are formed in the resin; A first conductive layer is formed on the first sidewall of the first opening by activating the conductive additive material; A second conductive layer is formed on the second sidewall of the second opening by activating the conductive additive material; By activating the conductive additive material, a third conductive layer is formed on the outer surface of the resin and extends from the first opening to the second opening; as well as By forming a conductive material on the first conductive layer, the second conductive layer, and the third conductive layer, the conductive material is used to cover the first conductive layer, the second conductive layer, and the third conductive layer. The resin is doped with a non-conductive metal inorganic compound, which is configured to transform into a conductive metal material when irradiated and activated by a laser.

10. The method of claim 9, wherein covering the first conductive layer, the second conductive layer, and the third conductive layer with the conductive material further comprises: The first conductive layer, the second conductive layer, and the third conductive layer are electroplated using the conductive material.

11. The method of claim 9, wherein forming the first opening and the second opening, and forming the first conductive layer and the second conductive layer further comprises: A laser is used to drill holes in the resin.

12. The method of claim 9, wherein forming the third conductive layer further comprises: The laser is moved from the first opening to the second opening across the outer surface of the resin.

13. The method of claim 9, wherein forming the resin doped with the conductive additive material on the die and the die pad further comprises: A first outer surface of the resin is formed, wherein the first outer surface of the resin is spaced apart from the surface of the bare sheet by a first dimension in a first direction; A second outer surface of the resin is formed, the second outer surface of the resin being spaced apart from the surface of the bare sheet by a second dimension in the first direction, the second dimension being smaller than the first dimension; as well as A third outer surface is formed transversely to the first outer surface and the second outer surface, the third outer surface extending from the first outer surface to the second outer surface.

14. The method of claim 9, wherein: The formation of the first conductive layer and the formation of the first opening occur simultaneously; and The formation of the second conductive layer and the formation of the second opening occur simultaneously.

15. A method for manufacturing a semiconductor, comprising: Couple the bare die to the bare die pad portion of the leadframe; The wires of the lead portion of the lead frame are coupled to the bare die; A resin doped with conductive additive material is formed on the bare die, the bare die pad, and the conductor; An opening extending into the bare die is formed in the resin using a laser; By activating the conductive additive material using the laser, a first conductive layer is formed on the sidewall of the opening, the first conductive layer being laterally adjacent to the end of the wire; The first conductive layer is covered by forming a conductive material on it. The resin is doped with a non-conductive metal inorganic compound, which is configured to transform into a conductive metal material when irradiated and activated by a laser.

16. The method of claim 15, wherein covering the first conductive layer with the conductive material further comprises: The first conductive layer is electroplated using the conductive material.

17. The method of claim 15, wherein the formation of the first conductive layer and the formation of the opening by utilizing the laser occur simultaneously.

18. The method of claim 15, further comprising: By activating the conductive additive material using the laser, a second conductive layer is formed on the bare die in the opening and on the bare die.

19. The method of claim 15, wherein forming the resin doped with the conductive additive material on the die and the die pad further comprises: A first outer surface of the resin is formed, wherein the first outer surface of the resin is spaced apart from the surface of the bare sheet by a first dimension in a first direction; A second outer surface of the resin is formed, the second outer surface of the resin being spaced apart from the surface of the bare sheet by a second dimension in the first direction, the second dimension being smaller than the first dimension; as well as A third outer surface is formed transversely to the first outer surface and the second outer surface, the third outer surface extending from the first outer surface to the second outer surface.

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