一种空气内侧墙纳米片环栅晶体管及其制造方法
By employing amorphous silicon or polycrystalline silicon temporary sidewall removal technology and nanosheet channel release technology in nanosheet ring gate transistors, an air inner sidewall structure is formed, which solves the problem that traditional processes are difficult to form air inner sidewalls, and achieves the effects of reducing source-drain parasitic capacitance and improving current drive performance.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- INST OF MICROELECTRONICS CHINESE ACAD OF SCI LTD
- Filing Date
- 2022-07-11
- Publication Date
- 2026-07-17
AI Technical Summary
Traditional inner-sidewall technology makes it difficult to form an air inner-sidewall structure, resulting in large source-drain parasitic capacitances in nanosheet ring gate transistors and incompatibility with mainstream FinFET fabrication processes.
By employing amorphous silicon or polycrystalline silicon temporary sidewall removal technology, combined with nanosheet channel release and atomic layer deposition (ALD)/CVD/PVD processes, an air-inner sidewall structure is formed, reducing the dielectric constant of the sidewall material and ensuring compatibility with mainstream FinFET fabrication processes.
It effectively reduces the source-drain parasitic capacitance of the device, improves the current drive performance of the transistor, and is compatible with mainstream FinFET fabrication processes.
Smart Images
Figure CN115172441B_ABST