A vertical cavity surface emitting laser and a method for manufacturing the same

Abstract

A vertical cavity surface emitting laser and a preparation method thereof, relating to the field of optoelectronic technology, the method comprising: sequentially forming an N-type ohmic contact layer, an N-type DBR layer, an MQW layer and a P-type DBR layer on a substrate, and performing table etching until the N-type ohmic contact layer is exposed, the P-type DBR layer comprising a plurality of AlGaAs layers with different refractive indices arranged alternately; performing lateral oxidation on the P-type DBR layer so that the plurality of AlGaAs layers of the P-type DBR layer respectively form a plurality of oxide layers, the plurality of oxide layers are sequentially arranged at intervals along the stacking direction, each oxide layer comprises an unoxidized region and an oxide restriction region surrounded along the outer edge of the unoxidized region; depositing an N electrode and a P electrode on the N-type ohmic contact layer and the P-type DBR layer respectively, the aperture of the unoxidized region of the oxide layer away from the P electrode is smaller than the aperture of the light window formed by the P electrode, and the aperture of the unoxidized region of any other oxide layer is greater than or equal to the aperture of the light window formed by the P electrode. The method can shorten the current path from the P electrode to the MQW layer.

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