Light emitting device and measuring device

Abstract

The present application provides a light emitting device and a measuring device. The light emitting device includes a light emitting portion including a light emitting element having a function of a thyristor, a light emitting electrode applying a first voltage to the light emitting portion for light emission, and a light emission permitting thyristor permitting the light emitting element to emit light using a second voltage that is lower than the first voltage and is set independently of the first voltage.

Description

Technical Field

[0001] This disclosure relates to a light-emitting device and a measuring device. Background Technology

[0002] Japanese Patent Application Publication No. 01-238962 discloses an array of light-emitting elements configured to arrange multiple light-emitting elements, whose threshold voltage or threshold current can be controlled by light from the outside, in one-dimensional, two-dimensional or three-dimensional arrangement, wherein at least a portion of the light generated from each light-emitting element is incident on other light-emitting elements near each light-emitting element, and each light-emitting element is connected to a clock line for applying voltage or current from the outside.

[0003] Japanese Patent Application Publication No. 2001-308385 discloses a self-scanning type light-emitting device, which is a light-emitting element constituting a six-layer pnpnpn semiconductor structure. Electrodes are provided at the p-type 1st layer and n-type 6th layer at both ends, and at the p-type 3rd layer and n-type 4th layer in the center, so that the pn layer performs the function of a light-emitting diode and the pnpn 4th layer performs the function of a thyristor.

[0004] Japanese Patent Application Publication No. 2009-286048 discloses a self-scanning type light source head, which includes: a substrate; a surface-emitting semiconductor laser arranged in an array on the substrate; and a thyristor arranged on the substrate and serving as a switching element for selectively turning the surface-emitting semiconductor laser on and off. Summary of the Invention

[0005] In methods for measuring the three-dimensional shape of a measured object by illuminating it with light from a light-emitting device and receiving the reflected light from the object, there are instances where a higher voltage is required to increase the light intensity from the light-emitting part in the light-emitting device. On the other hand, there are requirements that the signal enabling the light-emitting part to emit light is independent of the voltage that enables the light-emitting part to emit light, and is instead supplied by a voltage such as GPIO (Global Parallel I / O) that is lower than the voltage that enables the light-emitting part to emit light.

[0006] The object of the present invention is to provide a light-emitting device, etc., which can reduce the voltage of the signal for the light-emitting element to emit light compared to a case without a light-emitting thyristor.

[0007] According to a first aspect of this disclosure, a light-emitting device is provided, comprising: a light-emitting section including a light-emitting element having the function of a thyristor; a light-emitting electrode applying a first voltage to the light-emitting section for light emission; and a light-emitting permitting thyristor permitting the light-emitting element to emit light using a second voltage set lower than the first voltage and independent of the first voltage.

[0008] According to the second aspect of this disclosure, the light-emitting part is composed of one or more light-emitting elements, and each of the plurality of light-emitting parts is provided with the light-emitting permitting thyristor.

[0009] According to the third aspect of this disclosure, the light-emitting device includes a substrate, on which the light-emitting part and the light-emitting permitting thyristor are shared. In the substrate, the light-emitting permitting thyristor is disposed between a component supplying the second voltage disposed outside the substrate and the light-emitting part.

[0010] According to the fourth aspect of this disclosure, the light-emitting device includes a terminal portion that supplies the second voltage to each of the plurality of light-emitting license thyristors disposed in each of the plurality of light-emitting portions. The substrate has: a first side and a second side, which are opposite to each other; and a third side and a fourth side, which connect the first side and the second side and are opposite to each other. A component for supplying the second voltage is disposed on the first side. The terminal portion is disposed on any one or both of the portions on the first side, the third side, and the fourth side of the substrate where the light-emitting license thyristors are disposed.

[0011] According to the fifth aspect of this disclosure, the light-emitting device includes other terminal portions that supply a reference voltage, and the other terminal portions are disposed on the substrate.

[0012] According to the sixth aspect of this disclosure, the light-emitting element includes: a surface light-emitting diode; and a driving thyristor, which is stacked on the surface light-emitting diode, and causes the surface light-emitting diode to emit light by being turned on.

[0013] According to the seventh aspect of this disclosure, the light-emitting device includes a bipolar transistor connected to the light-emitting permitting thyristor. The bipolar transistor is configured to be connected to the driving thyristor. When the light-emitting permitting thyristor is in an on state, the bipolar transistor is in an on state, thereby enabling the driving thyristor to switch to an on state.

[0014] According to the eighth aspect of this disclosure, the surface-emitting diode is a vertical resonator surface-emitting laser.

[0015] According to the ninth aspect of this disclosure, the light-emitting device includes a supply electrode electrically connected to the light-emitting electrode and supplying a power supply voltage to the light-emitting permitting thyristor.

[0016] According to the tenth aspect of this disclosure, a measuring device is provided, comprising: the light-emitting device; and a three-dimensional sensor that receives reflected light from a measured object irradiated with light emitted from the light-emitting device.

[0017] (Effect)

[0018] According to the first scheme, compared with the case where there is no light-emitting thyristor, the voltage of the signal for the light-emitting element to emit light can be reduced.

[0019] According to the second scheme, compared with the case where each light-emitting part does not have a light-emitting permitting thyristor, the light emission of each light-emitting part can be easily controlled.

[0020] According to the third embodiment, compared to the case where the light-emitting thyristor is not positioned between the component supplying the second voltage and the light-emitting part, the connection between the light-emitting thyristor and the component supplying the second voltage becomes easier.

[0021] According to the fourth embodiment, compared to the case where the terminal portion is located on the fourth side, the connection between the light-emitting thyristor and the component supplying the second voltage becomes easier.

[0022] According to the fifth embodiment, the supply of the reference voltage becomes easier compared to the case where other terminals for supplying the reference voltage are not provided on the substrate.

[0023] According to the sixth scheme, compared with the case where the surface-emitting diodes and driving thyristors are not stacked, the light emission of the surface-emitting diodes can be easily controlled.

[0024] According to the seventh scheme, compared with the case without bipolar transistors, the light-emitting element can be controlled with a simple structure.

[0025] According to the eighth scheme, the light intensity can be increased compared to the case of a non-vertical resonator surface-emitting laser.

[0026] According to the ninth scheme, the number of electrodes can be reduced compared to the case where additional electrodes are provided to supply power voltage to the light-emitting thyristor.

[0027] According to the 10th scheme, three-dimensional shape can be measured. Attached Figure Description

[0028] Figure 1 This is a diagram illustrating an example of an information processing device.

[0029] Figure 2 It is a block diagram illustrating the structure of an information processing device.

[0030] Figure 3 It is a three-dimensional diagram illustrating the state of the illuminating device dividing the illuminating area.

[0031] Figure 4 This is a layout diagram illustrating the application of this embodiment of the light-emitting device.

[0032] Figure 5 This is an example of a top view of a light-emitting device using this embodiment.

[0033] Figure 6 This diagram illustrates the arrangement of the light-emitting device, the driving unit, and the permission signal generating unit on the wiring board.

[0034] Figure 7 It is the equivalent circuit of the light-emitting device that applies this embodiment.

[0035] Figure 8 This is the equivalent circuit of the light-emitting device that does not apply this embodiment.

[0036] Figure 9 It is a timing diagram illustrating the operation of the light-emitting device.

[0037] Figure 10 This is an enlarged top view of the light-emitting part.

[0038] Figure 11 This is a cross-sectional view of the light-emitting part. Figure 11 (a) is Figure 10 A cross-sectional view along the XIA-XIA′ line. Figure 11 (b) is Figure 10 A sectional view along the XIB-XIB′ line.

[0039] Figure 12 This is a top view of the permitting circuit.

[0040] Figure 13 This is a cross-sectional view of the permitting circuit. Figure 13 (a) is Figure 12 A cross-sectional view along line XIIIA-XIIIA′. Figure 13 (b) is Figure 12 A cross-sectional view along line XIIIB-XIIIB′.

[0041] Figure 14 This is another cross-sectional view of the permitting circuit. Figure 14 (a) is Figure 12 A sectional view along the XIVA-XIVA′ line. Figure 14 (b) is Figure 12 A cross-sectional view along the XIVB-XIVB′ line. Detailed Implementation

[0042] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0043] In measuring devices that measure the three-dimensional shape (hereinafter referred to as 3D shape) of an object, there are devices that measure the three-dimensional shape based on the so-called Time of Flight (ToF) method, which is based on the time of flight of light. In the ToF method, the time from the moment light is emitted from a light-emitting device included in the measuring device to the moment it is reflected by the object being measured and received by a three-dimensional sensor (hereinafter referred to as a 3D sensor) included in the measuring device is measured. Then, the 3D shape of the object being measured is determined based on the measured time. Furthermore, the object whose 3D shape is measured is labeled as the object being measured. There are cases where the three-dimensional shape is labeled as a three-dimensional image. Additionally, there are cases where the measured three-dimensional shape is labeled as three-dimensional measurement, 3D measurement, or 3D sensing.

[0044] Such a measuring device is suitable for identifying the object being measured based on the measured 3D shape. For example, it can be mounted on a portable information processing device to identify the face of a user who wishes to access the device. That is, it obtains the 3D shape of the user's face, identifies whether access is permitted, and only permits the use of the device (portable information processing device) if the user is identified as having permitted access.

[0045] Furthermore, this measuring device is also suitable for situations such as augmented reality (AR) where the 3D shape of an object is continuously measured. In this case, the distance to the object is not limited.

[0046] Such a measuring device can be applied to information processing devices other than portable information processing devices, such as personal computers (PCs).

[0047] Here, as an example, we illustrate the case where the information processing device is a portable information processing device, and we also illustrate the case where user authentication is performed by recognizing a face captured as a 3D shape.

[0048] (Information Processing Device 1)

[0049] Figure 1 This is a diagram illustrating an example of information processing device 1. As described above, information processing device 1 is, as an example, a portable information processing device.

[0050] The information processing device 1 includes a user interface unit (hereinafter referred to as the UI unit) 2 and an optical device 3 for measuring 3D shapes. The UI unit 2 integrates, for example, a display device for displaying information to the user and an input device for inputting instructions for information processing through user operation. The display device is, for example, a liquid crystal display or an organic EL display, and the input device is, for example, a touch panel.

[0051] The optical device 3 includes a light-emitting device 4 and a 3D sensor 5. The light-emitting device 4 illuminates light towards the object being measured, in this example, towards the face. The 3D sensor 5 receives the light reflected back from the face. Here, the 3D shape is measured according to the so-called Time-of-Flight (ToF) method based on light. Then, the face is identified based on the 3D shape. As described above, other than the face can also be used as the object being measured to measure the 3D shape. The measuring device for measuring 3D shape includes a light-emitting device 4 and a 3D sensor 5.

[0052] Information processing device 1 is a computer including a CPU, ROM, RAM, etc. The ROM includes non-volatile, rewritable memory, such as flash memory. The program and constants stored in the ROM are then expanded in the RAM, and the CPU executes the program, thereby enabling information processing device 1 to perform various information processing operations.

[0053] Figure 2 This is a block diagram illustrating the structure of the information processing device 1.

[0054] The information processing device 1 includes an optical device 3, a measurement control unit 8, and a system control unit 9. The measurement control unit 8 controls the optical device 3 to measure 3D shapes. The measurement control unit 8 includes a 3D shape determination unit 8A. The system control unit 9 controls the information processing device 1 as a system. Furthermore, the system control unit 9 includes a recognition processing unit 9A. Additionally, a UI unit 2, a speaker 9B, and a two-dimensional camera (in...) are connected to the system control unit 9. Figure 2 (The Chinese label indicates a 2D camera) 9C, etc.

[0055] The 3D shape determination unit 8A of the measurement control unit 8 measures the 3D shape of the object being measured based on reflected light from the object being measured, and determines the 3D shape of the object. The recognition processing unit 9A of the system control unit 9 recognizes the object being measured based on the 3D shape determined by the 3D shape determination unit 8A, and in this example, recognizes a face. Then, based on the recognized face, it identifies whether the user is authorized to access the device.

[0056] In addition to the light-emitting device 4 and the 3D sensor 5 described above, the optical device 3 also includes a driving unit 6, a permission signal generating unit 7, a wiring substrate 10, a light diffusion component 30, and a holding unit 40. The driving unit 6 supplies current for emitting light to the light-emitting device 4, driving the light-emitting device 4. The permission signal generating unit 7 generates a signal that permits the light-emitting device 4 to emit light.

[0057] The light-emitting device 4, the driving unit 6, the permission signal generating unit 7, the light diffusion component 30, and the holding unit 40 are disposed on the wiring substrate 10. Furthermore, the light-emitting device 4, the driving unit 6, and the permission signal generating unit 7 are connected by wiring provided on the wiring substrate 10.

[0058] The light-diffusing component 30 is inserted into the path of the light emitted from the light-emitting device 4, causing the light emitted from the light-emitting device 4 to irradiate in the desired direction. For example, the light-diffusing component 30 is held by the holding portion 40 provided on the wiring substrate 10 and covers the light-emitting device 4. In addition, the wiring substrate 10 may also include resistive elements and capacitive elements to enable the operation of the light-emitting device 4, the driving portion 6, and the permission signal generating portion 7. Furthermore, the light-emitting device 4 may be provided on a heat-dissipating substrate with a higher thermal conductivity than the wiring substrate 10. Examples of heat-dissipating substrates include alumina (Al2O3) with a thermal conductivity of about 20 to 30 W / m·K, silicon nitride (Si3N4) with a thermal conductivity of about 85 W / m·K, or aluminum nitride (AlN) with a thermal conductivity of 150 to 250 W / m·K, compared to the thermal conductivity of the insulating layer called FR-4 used on the wiring substrate 10, which is about 0.4 W / m·K. In addition, although wiring is provided on the wiring substrate 10, the wiring substrate 10 may also be a substrate without wiring. As long as the light-emitting device 4, the driving unit 6, and the permission signal generating unit 7 are electrically connected to each other, the substrate only needs to hold the light-emitting device 4, the driving unit 6, and the permission signal generating unit 7.

[0059] Figure 3 This is a three-dimensional diagram illustrating the illumination state of the 100-degree irradiation area divided by the four directions of the light-emitting device. Figure 3 In the light-emitting device 4, the right direction of the paper is defined as the x-direction, the top direction of the paper is defined as the y-direction, and the direction toward the irradiation area 100 is defined as the z-direction.

[0060] As an example, the light-emitting device 4 has twelve light-emitting parts 22. Alternatively, all twelve light-emitting parts 22 can be combined into a single light-emitting part. The twelve light-emitting parts are arranged in a matrix shape, with four in the x-direction and three in the y-direction. These light-emitting parts 22 can emit light individually or simultaneously. Furthermore, all of these light-emitting parts 22 can emit light simultaneously.

[0061] The illumination area 100 is the range of light emitted by the light-emitting device 4 that is used to measure the 3D shape of the object being measured. Here, the illumination range of each light-emitting unit 22 is different. That is, the light-emitting device 4 divides the illumination area 100 for illumination. The light emitted by the light-emitting unit 22 passes through the light-diffusing member 30 (see reference 30). Figure 2 This allows the setting of the light irradiation direction and / or light diffusion. Alternatively, instead of the light diffusion component 30, it can be an optical component such as a diffractive optical element (DOE) that causes the incident light to be emitted in different directions, or a transparent component such as a condenser lens, microlens, or protective cover.

[0062] Figure 4This is a layout diagram illustrating the application of the light-emitting device 4 in this embodiment. Figure 4 The x, y, and z directions in the figure are related to Figure 3 same.

[0063] The light-emitting device 4 includes a substrate 80, a light-emitting section 21, a terminal section 23, a light-emitting permitting section 26, and a reference voltage terminal 28. The light-emitting section 21 has twelve light-emitting sections 22. The terminal section 23 receives a permitting signal from the permitting signal generating section 7 to permit the light-emitting sections 22 to emit light. The light-emitting permitting unit 26 receives the permitting signal at the terminal unit 23. The light-emitting part 22 emits light. A reference voltage is supplied to the reference voltage terminal 28. The reference voltage is set to the ground voltage GND and marked as reference voltage Vga (0V). The reference voltage terminal 28 is another example of other terminals.

[0064] On substrate 80 (see below) Figure 11 The substrate 80 is provided with a light emitting section 21, a terminal section 23, a light emission permitting section 26, and a reference voltage terminal 28. Here, the x-direction side of the substrate 80 is side surface 80a, the -x-direction side is side surface 80b, the +y-direction side is side surface 80c, and the -y-direction side is side surface 80d. Furthermore, side surface 80a is an example of a first side surface, side surface 80b is an example of a second side surface, side surface 80c is an example of a third side surface, and side surface 80d is an example of a fourth side surface.

[0065] As an example, the light emitting section 21 has twelve light-emitting sections 22 arranged in a matrix, four in the x-direction and three in the y-direction. To distinguish each light-emitting section 22, they are labeled as light-emitting sections 22-1 to 22-12. Light-emitting sections 22-1 to 22-4, 22-5 to 22-8, and 22-9 to 22-12 are arranged along the x-direction, while the arrangements of light-emitting sections 22-1 to 22-4, 22-5 to 22-8, and 22-9 to 22-12 are arranged along the -y-direction.

[0066] On the light emitting section 21 (z-direction side), a light-emitting electrode 72 is provided in common to all light-emitting sections 22. The ±y-direction sides of the light-emitting electrode 72 form pad sections 72A and 72B connected to wiring for supplying light-emitting current. Wiring for supplying the power supply voltage VLD for supplying the light-emitting current is connected to the pad sections 72A and 72B. The light-emitting electrode 72 is only shown in a frame so that the lower light-emitting section 22 can be seen.

[0067] Terminal 23 is equipped with a permission signal that allows each light-emitting unit 22 to emit light, which is received from permission signal generation unit 7. Signal terminal 24. To differentiate the permission signal for each light-emitting part 22. Permission signal Marked as a license signal To distinguish each light-emitting part from the signal terminals 24, they are labeled as signal terminals 24-1 to 24-12. The terminal parts 23 are uniformly arranged on the +x direction side of the light-emitting part 21.

[0068] The light-emitting permitting unit 26 includes a permitting circuit 27 that permits light emission for each light-emitting unit 22. The permitting circuits 27 are labeled as permitting circuits 27-1 to 27-12 to distinguish them for each light-emitting unit 22. The light-emitting permitting unit 26 is disposed between the light-emitting unit 21 and the terminal unit 23.

[0069] Reference voltage terminals 28 are provided at the ends of the substrate 80 on the +x and -y directions. If the reference voltage terminals 28 are provided on the substrate 80, it becomes easy to supply the reference voltage Vga (0V) to the light-emitting unit 26.

[0070] Figure 5 This is an example of a top view of the light-emitting device 4 using this embodiment. Figure 5 The x, y, and z directions in the figure are related to Figure 4 same. Figure 5 To explain in more detail Figure 4 A diagram showing the layout of the light-emitting device 4 is provided. Figure 5 Some labels have been omitted.

[0071] The 〇 mark in the light-emitting section 22 indicates a light-emitting element. That is, each light-emitting section 22 has multiple light-emitting elements. In addition, each light-emitting section 22 may have the same number of light-emitting elements or different numbers of light-emitting elements. The light-emitting section 22 may also have only one light-emitting element.

[0072] Each light-emitting part 22 of the light-emitting section 21 is connected to each license circuit 27 of the light-emitting license section 26 via wiring 25. To distinguish the wiring 25 according to each light-emitting part 22, it is labeled as wiring 25-1 to 25-12. Figure 5 Wiring 25-1 connecting the light-emitting part 22-1 and the license circuit 27-1, wiring 25-2 connecting the light-emitting part 22-2 and the license circuit 27-2, and wiring 25-3 connecting the light-emitting part 22-3 and the license circuit 27-3 are shown. Other wirings 25-4 to 25-12 are omitted.

[0073] Wiring 25 is provided along the outside of the light-emitting portion 22. Therefore, compared with the case where wiring is provided inside the light-emitting portion 22, i.e., on the surface, it is possible to provide light-emitting diodes (LEDs) at a higher density.

[0074] Each license circuit 27 of the light-emitting license section 26 is connected to each signal terminal 24 of the terminal section 23. Figure 5In the middle, a wiring is led out from the signal terminal 24 and connected to the license circuit 27.

[0075] The light-emitting part 26 is provided with a reference voltage line 73 for which a reference voltage is supplied and a power supply voltage line 74 for which a power supply voltage VLD is supplied. The reference voltage line 73 is connected to the reference voltage terminal 28. The power supply voltage line 74 is connected to the light-emitting electrode 72. As described above, the light-emitting electrode 72 is supplied with the power supply voltage VLD.

[0076] The light-emitting part 22 of the light-emitting part 21 is connected to the licensing circuit 27 of the light-emitting licensing part 26. The licensing circuit 27 of the light-emitting licensing part 26 is connected to the signal terminal 24 of the terminal part 23. The license signal received from the signal terminal 24 of the terminal part 23... The light-emitting section 22 of the light-emitting section 21 emits light through the permitting circuit 27 of the light-emitting permitting section 26.

[0077] Figure 6 This diagram illustrates the arrangement of the light-emitting device 4, the driving unit 6, and the permission signal generating unit 7 on the wiring substrate 10. The light-emitting device 4 is shown in a simplified form. Figure 4 The layout diagram shown. Figure 6 The x, y, and z directions in the figure are related to Figure 3 , Figure 4 same.

[0078] The driving unit 6 is disposed on the side 80b (-x direction side) of the substrate 80 in the light-emitting device 4, and the permission signal generating unit 7 is disposed on the side 80a (+x direction side) of the substrate 80. That is, the driving unit 6 is disposed on the light emitting part 21 side of the light-emitting device 4. As a result, the distance between the driving unit 6 and the light-emitting part 22 of the light emitting part 21 is shortened. Therefore, the inductance between the driving unit 6 and the light-emitting part 22 in the light-emitting device 4 is reduced, and the rise time of the light pulse is shortened.

[0079] The permission signal generating unit 7 is provided on the terminal portion 23 side of the light-emitting device 4. Therefore, the distance between the permission signal generating unit 7 and the terminal portion 23 is shortened, and the connection becomes easier.

[0080] Furthermore, the pad portion 72A of the light-emitting electrode 72 is provided on the substrate 80 on the side 80c side (+y direction side), and the pad portion 72B is provided on the substrate 80 on the side 80d side (-y direction side). The wiring supplying the power supply voltage VLD to the pad portions 72A and 72B is provided on the side where the driving unit 6 and the permission signal generation unit 7 are not provided. In addition, if the pad portions 72A and 72B are provided on the side of the terminal portion 23 or on the side where the driving unit 6 is provided, the connection of the wiring to the pad portions 72A and 72B may be obstructed by the terminal portion 23 or the driving unit 6. That is, the wiring supplying the power supply voltage VLD to the pad portions 72A and 72B is not obstructed by the driving unit 6 and the permission signal generation unit 7. In other words, compared with the case where the pad portions 72A and 72B are provided in the position where the terminal portion 23 or the driving unit 6 is provided, the connection to the pad portions 72A and 72B becomes easier.

[0081] Pad portion 72A is provided on side surface 80c, and pad portion 72B is provided on side surface 80d. That is, pad portions 72A and 72B are provided on two opposing side surfaces of the substrate 80. However, either pad portion 72A or 72B may be provided. Furthermore, by providing pad portions 72A and 72B as two side surfaces of the substrate 80, current for emitting light is supplied from both sides of the light-emitting electrode 72. As a result, compared to the case where either pad portion 72A or 72B is provided, deviation in the current supply to the light-emitting section 22 is suppressed.

[0082] Figure 7 This is the equivalent circuit of the light-emitting device 4 using this embodiment. Figure 7 In addition to the light-emitting device 4, the drive unit 6 and the measurement and control unit 8 are also shown.

[0083] The light-emitting device 4 includes a light-emitting section 21, a terminal section 23, and a light-emitting permitting section 26. Figure 7 The image shows three light-emitting units 22 (light-emitting units 22-1, 22-2, 22-3) in the light-emitting unit 21, three license circuits 27 (license circuits 27-1, 27-2, 27-3) connected to the three light-emitting units 22, and signal terminals 24 (signal terminals 24-1, 24-2, 24-3) connected to the three license circuits 27. These will be described sequentially below.

[0084] Each light-emitting unit 22, as described in light-emitting unit 22-1, includes multiple light-emitting diodes (LEDs) and driving thyristors (S) connected in series. Here, the LEDs and driving thyristors (S) are examples of light-emitting elements that include thyristor functionality. Furthermore, the semiconductor layers constituting the LEDs in each light-emitting unit 22 are interconnected. Similarly, the semiconductor layers constituting the driving thyristors (S) in each light-emitting unit 22 are interconnected. Therefore, the driving thyristors (S) can also operate as a single driving thyristor (S).

[0085] A light-emitting diode (LED) is a surface-emitting diode that emits light in a direction perpendicular to the substrate. An example of a surface-emitting diode is a vertically cavity surface-emitting laser (VCSEL). Hereinafter, we will assume that the LED is a VCSEL. A VCSEL is a surface-emitting laser element in which a light-emitting layer, forming the light-emitting region, is provided between a lower multilayer mirror and an upper multilayer mirror stacked on a substrate, and the laser light is emitted in a direction perpendicular to the surface. This VCSEL has a λ-resonator structure. Alternatively, a surface-emitting diode can also be a laser diode or other light-emitting device besides a VCSEL. Hereinafter, the VCSEL may be referred to as a VCSEL.

[0086] A light-emitting diode (LED) is a two-terminal semiconductor device with a cathode (K) and an anode (A). A driving thyristor (S) is a three-terminal semiconductor device with a cathode (K), an n-gate (G1), and an anode (A).

[0087] The anode ([A]) of the light-emitting diode (LED) is connected to the cathode ([K]) of the driving thyristor S. The cathodes ([K]) of the driving thyristor S are connected in parallel, and the gates ([G1]) of the driving thyristor S are also connected in parallel. Specifically, the cathode ([K]) of the LED is connected to a back electrode 90 disposed on the back side of the substrate 80 (see below). Figure 11 ).

[0088] The anode ([A]) of the driving thyristor S is connected to the light-emitting electrode 72. A power supply voltage VLD is applied to the light-emitting electrode 72.

[0089] As described with respect to licensing circuit 27-1, each licensing circuit 27 includes a light-emitting licensing thyristor F, an npn bipolar transistor Tr, and resistors R1 and R2. The light-emitting licensing thyristor F is a four-terminal semiconductor device having a cathode ([K]), an n-gate ([G1]), a p-gate ([G2]), and an anode ([A]). The npn bipolar transistor Tr is a three-terminal semiconductor device having a collector ([C]), a base ([B]), and an emitter ([E]).

[0090] The cathode ([K]) and gate ([G1]) of the light-emitting thyristor F are supplied with a reference voltage Vga (0V). The anode ([A]) of the light-emitting thyristor F is connected to signal terminal 24. Signal terminal 24 is supplied with a license signal. The p-gate ([G2]) of the light-emitting permitting thyristor F is connected to the base ([B]) of the npn bipolar transistor Tr.

[0091] The emitter ([E]) of the npn bipolar transistor Tr is supplied with a reference voltage Vga (0V). The collector ([C]) of the npn bipolar transistor Tr is connected to the n gate ([G1]) of the driving thyristor S of the light-emitting section 22 via resistor R1. Furthermore, the collector ([C]) of the npn bipolar transistor Tr is connected to the power supply voltage line 74 (see reference 74) via resistor R2. Figure 5 Connect. Power supply voltage line 74 is supplied with power supply voltage VLD.

[0092] The driving unit 6 includes a MOS transistor 61 as an example of a driving element and a signal generation circuit 62. Alternatively, the driving element may be an insulated gate bipolar transistor (IGBT) or the like.

[0093] The drain ([D]) of the MOS transistor 61 is connected to the cathode ([K]) of the light-emitting diode (LED) of the light-emitting section 22. The drain ([D]) of the MOS transistor 61 is connected to the reference voltage line 71 of the reference voltage Vga (0V).

[0094] The signal generation circuit 62 in the drive unit 6 supplies the gate ([G]) of the MOS transistor 61 with an On signal (On) to turn the MOS transistor 61 on and an Off signal (Off) to turn it off.

[0095] The power supply voltage VLD and the reference voltage Vga (0V) are supplied from the measurement control unit 8. The drive unit 6 is controlled by the measurement control unit 8.

[0096] The driving method of the light-emitting device 4 described above is called low-side driving. Low-side driving is preferred when it is desired to drive the light-emitting diode (LED) at a higher speed. Low-side driving refers to a structure in which the driving element, such as the MOS transistor 61, is located downstream of the current path for the driven object, such as the light-emitting diode (LED).

[0097] The operation of the light-emitting device 4 will be explained below.

[0098] (Driver thyristor S and light-emitting permitting thyristor F)

[0099] The driving thyristor S is a semiconductor device having three terminals: an anode ([A]), an n-gate ([G1]), and a cathode ([K]). The light-emitting thyristor F is a semiconductor device having four terminals: a cathode ([K]), an n-gate ([G1]), a p-gate ([G2]), and an anode ([A]). As described later, the driving thyristor S and the light-emitting thyristor F are made of GaAs, AlGaAs, AlAs, etc., with an n-cathode layer 85, a p-gate layer 86, an n-gate layer 87, and a p-anode layer 88 (see below) Figure 11 They are stacked together. That is, both the driving thyristor S and the light-emitting license thyristor F have an npnp structure. The driving thyristor S does not use a p-gate ([G2]), but the structure of the driving thyristor S is the same as that of the light-emitting license thyristor F. Hereinafter, the driving thyristor S and the light-emitting license thyristor F will be described as thyristors.

[0100] As an example, the forward voltage (diffusion potential) V of the pn junction between the p-type semiconductor layer (p-gate layer 86, p-anode layer 88) and the n-type semiconductor layer (n-cathode layer 85, n-gate layer 87) is... d Let's use 1.5V for explanation.

[0101] Suppose that a voltage is applied between the anode ([A]) and cathode ([K]) of the thyristor to transition it from the off state to the on state, but it is in the off state with no current flowing through it. Additionally, assume that the voltage V at the cathode ([K]) of the thyristor is... K It is the reference voltage V ga (0V). If a forward bias is applied between the anode ([A]) and the n-gate ([G1]), the thyristor transitions from the off state to the on state (conduction). That is, if the voltage V of the n-gate ([G1]) is 0V... G1 Become the voltage V from the anode ([A]) of the thyristor A Subtract the positive voltage V d The resulting voltage is a low voltage (V) G1 <V A -V d If ), then the thyristor is turned on.

[0102] Furthermore, if the voltage V at the anode ([A]) of the thyristor A The voltage V at the n gate ([G1]) G1 Apply a positive voltage V d The obtained voltage is a high voltage (V)A >V G1 +V d If the thyristor is turned off, it will switch to the on state (conducting).

[0103] The thyristor in the conducting state has a voltage V between its anode ([A]) and cathode ([K]) compared to the forward voltage V. d If the current supplied is large enough to maintain the conducting state, then the conducting state will be maintained. That is, when the cathode ([K]) is at the reference voltage Vga (0V), if the voltage V of the anode ([A]) is large, then the conducting state will be maintained. A Comparison of forward voltage V d If the value is large, the conduction state will be maintained (V). A >V d Furthermore, the voltage V of the p-gate ([G2]) G2 This becomes a voltage close to the voltage of the anode ([A]). The voltage V for the p-gate ([G2]) is as follows. G2 The voltage at which the anode ([A]) is located will be explained (V). G2 =V A In order to distinguish between the light-emitting permitting thyristor F and the driving thyristor S, the voltage of the anode ([A]) will be divided into V. FA V SA The same applies to other voltages.

[0104] Furthermore, in a thyristor in the conducting state, if the voltage between the anode ([A]) and the cathode ([K]) is less than the forward voltage V... d If the voltage V at the gate ([G1]) is 1, the thyristor will transition from the on state to the off state (off). Even in the on state, the voltage V at the gate ([G1]) is 1. G1 Less than the voltage V from the anode ([A]) A Subtract the positive voltage V d The thyristor does not turn off when the voltage is obtained.

[0105] (npn bipolar transistor Tr)

[0106] If a forward bias is applied between the emitter ([E]) and base ([B]), the npn bipolar transistor Tr, which is in the off state, transitions to the on state. Consequently, the voltage V at the collector ([C]) increases. C Become the voltage V with respect to the emitter ([E]) E Approximate voltage. Figure 7 The emitter ([E]) of the npn bipolar transistor Tr shown is supplied with a reference voltage Vga (0V). Therefore, if the npn bipolar transistor Tr is turned on, the voltage V at the collector ([C]) will be... C Becomes the voltage V that serves as the emitter ([E]). EThe reference voltage Vga (0V) is close to the voltage. Below, the voltage V at the collector ([C]) is... C The case where the reference voltage Vga (0V) is used will be explained (V C =0V).

[0107] (Light Emitting Diode LED)

[0108] A light-emitting diode (LED) is a semiconductor device with two terminals: an anode (A) and a cathode (K). Therefore, if a forward voltage V is applied between the anode (A) and cathode (K) of an LED, ... d A high voltage, when a current capable of emitting light flows through it, will produce light.

[0109] (Operation of the light-emitting unit 22 and the permitting circuit 27)

[0110] The operation of the light-emitting unit 22 and the license circuit 27 will be explained using the light-emitting unit 22-1 and the license circuit 27-1.

[0111] The n gate ([G1]) of the driving thyristor S of the light-emitting part 22 is connected to the collector ([C]) of the npn bipolar transistor Tr of the license circuit 27 via resistor R1.

[0112] Furthermore, the power supply voltage VLD is applied to the anode ([A]) of the driving thyristor S of the light-emitting section 22 via the light-emitting electrode 72. Also, the collector ([C]) of the npn bipolar transistor Tr in the licensing circuit 27 is supplied with the power supply voltage VLD via resistor R2. The anode ([A]) of the light-emitting licensing thyristor F in the licensing circuit 27 is connected to the signal terminal 24 and a licensing signal is supplied thereon.

[0113] Assuming the power supply voltage VLD is 5V, the permission signal The voltage is 0V. The 5V power supply voltage VLD is a value exceeding the forward voltage Vd of 1.5V. Assume that the driving thyristor S of the light-emitting section 22, the npn bipolar transistor Tr of the enabling circuit 27, and the light-emitting enabling thyristor F are in the off state. Furthermore, the signal generation circuit 62 of the driving section 6 supplies an On signal to the MOS transistor 61. That is, the MOS transistor 61 is in the on state, and the cathode ([K]) of the light-emitting diode LED connected via the MOS transistor 61 is the reference voltage Vga (0V).

[0114] If permission signal If the voltage is 0V, then the voltage V at the anode ([A]) of the light-emitting permitting thyristor F in permitting circuit 27 is... FA The voltage V of the n-gate ([G1]) FG1 Since the voltage is 0V, the light-emitting permitting thyristor F remains off.

[0115] The n-gate ([G1]) of the driving thyristor S of the light-emitting section 22 is supplied with a power supply voltage VLD via resistors R1 and R2. Due to the voltage V at the anode ([A]) of the driving thyristor S... SA The voltage V of the n-gate ([G1]) SG1 The power supply voltage is VLD, therefore the driving thyristor S remains in the off state. Furthermore, since current does not flow through the series-connected driving thyristor S and the LED, the LED is in a non-emitting state (not emitting light).

[0116] If permission signal Become more than as a positive voltage V d If the voltage is 1.5V, then the voltage V at the anode ([A]) of the light-emitting permitting thyristor F is... FA It becomes greater than the voltage V at the n-gate ([G1]). FG1 (0V) Apply a positive voltage V d The voltage obtained is large (V) FA >V FG1 +V d Therefore, the light-emitting thyristor F transitions from the off state to the on state (conducting). Consequently, the voltage V at the p-gate ([G2]) of the light-emitting thyristor F increases. FG2 The voltage V that becomes the anode ([A]) of the light-emitting thyristor F FA Due to voltage V FA It exceeds the positive voltage V of 1.5V. d voltage (V) FA >V d Therefore, the npn bipolar transistor Tr transitions from the off state to the on state. Consequently, the voltage VC at the collector ([C]) of the npn bipolar transistor Tr becomes the voltage (0V) at the emitter ([E]). C =0V).

[0117] The n-gate ([G1]) of the driving thyristor S is connected to the collector ([C]) of the npn bipolar transistor Tr via resistor R1. If the voltage V at the collector ([C]) of the npn bipolar transistor Tr... C If it becomes 0V, then the voltage V driving the n gate ([G1]) of the thyristor S is... SG1 The voltage V at the anode ([A]) of the driving thyristor S becomes 0V. SA It is the power supply voltage VLD (5V). Due to the voltage V at the n-gate ([G1]) SG1 The voltage V higher than that of the anode ([A]) SA Voltage exceeding the forward voltage Vd (V SG1 >V SA +V dTherefore, the driving thyristor S transitions from the off state to the on state (conducting). Current then flows through the driving thyristor S and the LED, which are connected in series, and the LED begins to emit light (lights up). Furthermore, a voltage equal to the power supply voltage VLD minus the forward voltage V is applied between the anode (A) and cathode (K) of the LED. d The resulting voltage is 3.5V.

[0118] If permission signal That is, the voltage V at the anode ([A]) of the light-emitting permitting thyristor F. FA Become less than the forward voltage V d voltage (V) FA <V d If the light-emitting permitting thyristor F is activated, it will transition from the on state to the off state (off).

[0119] On the other hand, the voltage V driving the anode ([A]) of the thyristor S SA It is the power supply voltage VLD. Therefore, even if the voltage at the n-gate ([G1]) is less than the voltage from the anode ([A]), it is still a power supply voltage. SA Subtract the positive voltage V d The obtained voltage does not turn off the driving thyristor S. Therefore, the signal generation circuit 62 of the driving unit 6 supplies an Off signal, causing the MOS transistor 61 to be in the off state, thereby cutting off the current flowing through the series-connected driving thyristor S and the light-emitting diode LED. As a result, the driving thyristor S becomes off. Since no current flows through the light-emitting diode LED, the LED stops emitting light (goes out), becoming a non-emitting state.

[0120] The above explanation addresses the case where the power supply voltage VLD is 5V. The same applies when the power supply voltage VLD is 10V. This is because the voltage V at the n-gate ([G1]) of the light-emitting thyristor F... FG1 It is the reference voltage Vga (0V), therefore, if the permission signal... Become more than as a positive voltage V d When the voltage is 1.5V, the light-emitting permitting thyristor F turns on. Furthermore, if the permitting signal... Become as a positive voltage V d If the voltage is below 1.5V, the light-emitting permitting thyristor F is turned off and remains off. That is, regardless of the power supply voltage VLD, if the permitting signal... Set to exceed as positive voltage V d A voltage of 1.5V turns the LED on, and a voltage less than 1.5V turns it off or keeps it off. Therefore, this serves as the supply of the license signal. The permission signal generation unit 7 can use GPIO (Global Parallel I / O) and other devices that output voltages of 1.8V, 3V, 3.3V, etc.

[0121] Furthermore, with a power supply voltage VLD of 5V, the LED is supplied with 3.5V, but if VLD is set to 10V, the LED is supplied with 8.5V. The higher the applied voltage, the greater the light intensity of the LED. Therefore, a higher power supply voltage VLD is desirable. The lower the voltage, the better. Therefore, by setting the light-emitting permitting unit 26, the permitting signal is transmitted. The voltage is set to low, independent of the power supply voltage VLD.

[0122] Here, the power supply voltage VLD is an example of the first voltage, used as a license signal to switch the light-emitting license thyristor F to the on state. The voltage is an example of the second voltage. As described above, the power supply voltage VLD, as an example of the first voltage, is 5V, 10V, etc., and the license signal is used to switch the light-emitting license thyristor F, as an example of the second voltage, to the on state. The voltage is higher than 1.5V, which is the positive voltage Vd. Therefore, the second voltage is set lower than the first voltage. Furthermore, the permission signal generation unit 7 is an example of a component that supplies the second voltage.

[0123] In addition, Figure 7 The right end shows a light-emitting diode (LED) with its anode ([A]) set to the reference voltage Vga (0V). As will be described later, a light-emitting permitting unit 26 is provided on the LED. Therefore, the anode ([A]) of the LED is set to the reference voltage Vga (0V). Therefore, if the MOS transistor 61 of the driving unit 6 is turned on, the back electrode 90, which serves as the cathode ([K]) of the LED, becomes the reference voltage Vga (0V), and thus the LED does not emit light.

[0124] Figure 8 This is the equivalent circuit of the light-emitting device 4' without the application of this embodiment. Figure 8 In addition to the light-emitting device 4', a driving unit 6 and a measurement and control unit 8 are also shown. The light-emitting device 4' does not have a light-emitting permitting unit 26. The signal terminal 24 of the terminal unit 23 is connected to the n gate ([G1]) of the driving thyristor S of the light-emitting unit 22. A permitting signal is supplied to the signal terminal 24. Other parts and Figure 7 The light-emitting device 4 shown is the same, so it is labeled with the same number and the description is omitted.

[0125] In the light-emitting device 4', the voltage V driving the anode ([A]) of the thyristor S is... SA It becomes the power supply voltage VLD. Then, it is used as a permission signal. The voltage V of the n-gate ([G1]) SG1 The voltage V from the anode ([A]) becomes greater than that from the anode ([A]). SA Subtract the positive voltage V d The obtained voltage (V) SG1 <V A -V d If the voltage VLD is small, the thyristor S will transition from the off state to the on state (conducting). Therefore, when the power supply voltage VLD is 5V, a clearance signal is required to maintain the off state of the thyristor S. The voltage must be 3.5V or higher. Furthermore, when the power supply voltage VLD is 10V, a clearance signal is required to maintain the off-state of the driving thyristor S. The voltage is 8.5V or higher. Therefore, it is difficult to apply GPIO (Global Parallel I / O) to the permission signal generation unit 7, which is the light-emitting device 4'.

[0126] (Timing diagram of light-emitting device 4)

[0127] Figure 9 This is a timing diagram illustrating the operation of the light-emitting device 4. The horizontal axis represents time t in sequence from time a to e. From top to bottom, the power supply voltage VLD and the permission signal are shown. Permission signal The signal generated by the signal generation circuit 62 of the drive unit 6, the state of the light-emitting units 22-1 to 22-8, and the state of the light-emitting units 22-9 to 22-12. Permission signal. This is a signal that switches between H-level and L-level. H-level refers to a voltage exceeding the positive voltage Vd, and L-level refers to the reference voltage Vga (0V). Here, as an example, the permission signal... Maintained at L level, permit signal Simultaneously, it switches from L level to H level and then back to L level. Additionally, the permission signal... These can be set independently, or multiple can be set simultaneously as described above. Additionally, there are permission signals. You can also set all of them at the same time.

[0128] At time a, the power supply voltage VLD is applied. (Permission signal) The voltage level is L. Therefore, the light-emitting permitting thyristors F of permitting circuits 27-1 to 27-12 are in the off state. The signal generation circuit 62 of the drive unit 6 supplies the Off signal to the MOS transistor 61. Therefore, the MOS transistor 61 is in the off state. All drive thyristors S are in the off state, and all light-emitting diodes (LEDs) are in the non-emitting state.

[0129] At time b, the permission signal The voltage level shifts from L to H. As a result, the light-emitting permitting thyristors F of permitting circuits 27-9 to 27-12 are turned on. Consequently, via the npn bipolar transistor Tr, the n-gate ([G1]) of the driving thyristors S of the light-emitting sections 22-9 to 22-12 becomes 0V, and they are able to transition from the off state to the on state. However, since the MOS transistor 61 of the driving section 6 is in the off state, the driving thyristor S cannot transition to the on state.

[0130] At time c, the signal generation circuit 62 of the driving unit 6 supplies an On signal to the MOS transistor 61. Then, the power supply voltage VLD is applied to the series connection between the driving thyristors S and the light-emitting diodes (LEDs) of the light-emitting units 22-9 to 22-12. Therefore, the driving thyristors S transition from the off state to the on state, and the LEDs begin to emit light (light up).

[0131] At time d, the permission signal The signal transitions from H level to L level. Consequently, the light-emitting permitting thyristors F in permitting circuits 27-9 to 27-12 are turned off. However, the driving thyristors S in the light-emitting sections 22-9 to 22-12 do not transition to the off state, and the light-emitting diodes (LEDs) continue to emit light.

[0132] At time e, the signal generation circuit 62 of the drive unit 6 supplies the Off signal to the MOS transistor 61. As a result, no current flows in the series connection between the drive thyristors S of the light-emitting units 22-9 to 22-12 and the light-emitting diodes (LEDs), and the LEDs stop emitting light (go out).

[0133] As explained above, control the light-emitting device 4. Alternatively, the permission signal for time b can be used. The timing of the transition from L level to H level, and the timing replacement of the signal generation circuit 62 in the drive unit 6 supplying the On signal to the MOS transistor 61 at time c. In this case, the light-emitting diode (LED) enables the enable signal. The light emission begins at the timing of the transition from L level to H level. Alternatively, the enable signal at time d can also be used. The timing of the transition from H level to L level and the timing of the timing of the shift of time e in the signal generation circuit 62 of the drive unit 6 supplying the Off signal to the MOS transistor 61 are timed replacements.

[0134] (Structure of light-emitting device 4)

[0135] The light-emitting device 4 is made of a semiconductor material capable of emitting light. For example, the light-emitting device 4 is made of a compound semiconductor such as GaAs. Furthermore, as shown in the cross-sectional view described later (refer to the following description...), Figure 11 As shown, the device 4 is constructed from a semiconductor layer stack consisting of multiple GaAs-type compound semiconductor layers deposited on an n-type GaAs substrate 80. Furthermore, the light-emitting device 4 is constructed by separating the semiconductor layer stack into multiple island-like structures. The remaining island-like regions are referred to as island portions. Etching the semiconductor layer stack into island-like structures to separate the components is called mesa etching.

[0136] The structures of the light-emitting part 22 and the permitting circuit 27 will be described in turn below.

[0137] <Structure of Light-Emitting Part 22>

[0138] Each light-emitting portion 22 is formed in an island-shaped portion 301 that is separated from each other in the semiconductor stack. In addition, the island-shaped portions 301 corresponding to the light-emitting portions 22-1, 22-2, ... are labeled as island portions 301-1, 301-2, ...

[0139] Figure 10 This is an enlarged top view of the light-emitting part 22. Figure 10 It is Figure 5 This is an enlarged view of a portion of the light-emitting part 22-12 (island-shaped part 301-12) in the light-emitting device 4 shown. Hereinafter, the light-emitting part 22-12 will be labeled as light-emitting part 22, and the island-shaped part 301-12 will be labeled as island-shaped part 301 for explanation. Furthermore, in Figure 10 The island-shaped portion 302 is also shown in the image. Its x, y, and z directions are aligned with... Figure 5 same.

[0140] The island section 301 includes multiple light-emitting diodes (LEDs) and multiple driving thyristors (S). Here, the four LEDs LED1 to LED4 and the driving thyristors S1 to S4 surrounding the LEDs LED1 to LED4 are labeled.

[0141] First, the planar structure of the light-emitting section 22 will be explained focusing on the light-emitting diode LED1 and the driving thyristor S1 located in the lower right corner of the paper. Furthermore, the light-emitting diode LED1 and the driving thyristor S1 will not be distinguished, but will be referred to as the light-emitting diode LED and the driving thyristor S for explanation. The same applies below.

[0142] In a light-emitting diode (LED), the central circular portion is the light emission outlet 341. The driving thyristor S is a region 311 (see later description) of a p-type anode layer (hereinafter referred to as the p-anode layer; the same applies to other components) 88 surrounding the light emission outlet 341. Figure 11 Furthermore, a p-ohm electrode 321 is provided on region 311. Six holes (trenches) 342 and six n-gate electrodes 331 are provided on its outer side. The n-gate electrodes 331 are disposed on the n-type gate layer (n-gate layer) 87, which will be described later. Additionally, a portion of the n-gate electrodes 331 are connected to the n-gate electrodes 331 of adjacent light-emitting diodes (LEDs).

[0143] Furthermore, the n-gate layer 87 is led out to the light-emitting permitting section 26 side (+x direction side), and an n-gate electrode 332 connected to the permitting circuit 27 (perhaps permitting circuit 27-12 in the case of island section 301-12) is provided at its end. In addition, the portion of the n-gate layer 87 led out to the light-emitting permitting section 26 side becomes wiring 25 (here, wiring 25-12).

[0144] Furthermore, in addition to the light emission outlet 341, a light-emitting electrode 72 is provided to cover the light-emitting part 22. The light-emitting electrode 72 is provided on the insulating layer 89 (see below). Figure 11 The through holes (a) and (b) are connected to the p-ohm electrode 321 disposed in region 311. Additionally, in Figure 10 In the diagram, the light-emitting electrode 72 is indicated by a dashed line.

[0145] The island-shaped portion 302 is provided with the n-gate layer 87 exposed, and an n-gate electrode 333 is provided on the exposed n-gate layer 87. One end of the n-gate electrode 333 in the island-shaped portion 302 is connected to the light-emitting electrode 72 through a through-hole provided in the insulating layer 89. The other end of the n-gate electrode 333 in the island-shaped portion 302 is connected to... Figure 5 The power supply voltage line 74 shown is connected. That is, the island portion 302 supplies the power supply voltage VLD to the power supply voltage line 74 through the n-gate layer 87 and the n-gate electrode 333. In this embodiment, the n-gate electrode 333 is an example of a supply electrode.

[0146] Figure 11 This is a cross-sectional view of the light-emitting part 22. Figure 11 (a) is Figure 10 A cross-sectional view along the XIA-XIA′ line. Figure 11 (b) is Figure 10 A sectional view along the XIB-XIB′ line. Figure 11 (a) is a partial cross-sectional view of two adjacent light-emitting diodes LED1 and LED2 separated by an n-gate electrode 331. Figure 11(b) is a partial cross-sectional view of two adjacent light-emitting diodes LED3 and LED4 separated by a hole 342.

[0147] like Figure 11 As shown in (a), the light-emitting part 22 has an n-type cathode layer (n-cathode layer) 81, a light-emitting layer 82, and a p-type anode layer (p-anode layer) 83, which constitute a light-emitting diode (LED), stacked on an n-type GaAs substrate 80. That is, the LED is constructed by using the stacked n-cathode layer 81 as the cathode, the light-emitting layer 82 as the light-emitting layer, and the p-anode layer 83 as the anode.

[0148] Next, a tunnel junction layer 84 is stacked on the p-anode layer 83.

[0149] Furthermore, an n-type cathode layer (n-cathode layer) 85, a p-type gate layer (p-gate layer) 86, an n-type gate layer (n-gate layer) 87, and a p-type anode layer (p-anode layer) 88 constituting the driving thyristor S are stacked on the tunnel junction layer 84. That is, the driving thyristor S is constructed by using the stacked n-cathode layer 85 as the cathode, the p-gate layer 86 as the p-gate, the n-gate layer 87 as the n-gate, and the n-gate layer 88 as the anode.

[0150] Here, the stack of n-cathode layer 81, light-emitting layer 82, p-anode layer 83, tunnel junction layer 84, n-cathode layer 85, p-gate layer 86, n-gate layer 87, and n-gate layer 87 is a semiconductor layer stack.

[0151] A light-emitting diode (LED) is constructed by etching away the p-anode layer 88, n-gate layer 87, p-gate layer 86, n-cathode layer 85, and tunnel junction layer 84 of the driving thyristor S stacked on the upper side, exposing the p-anode layer 83. Light is emitted from the exposed p-anode layer 83. The exposed p-anode layer 83 is the light emission outlet 341.

[0152] The driving thyristor S is composed of an n-cathode layer 85, a p-gate layer 86, an n-gate layer 87, and a p-anode layer 88 surrounding the light emission outlet 341 of the light-emitting diode (LED). Furthermore, on the substrate 80 side of the driving thyristor S, there is a tunnel junction layer 84, a p-anode layer 83 constituting the LED, a light-emitting layer 82, and an n-cathode layer 81. That is, the LED and the driving thyristor S are stacked and connected in series via the tunnel junction layer 84.

[0153] A tunnel junction layer 84 is disposed between the p-anode layer 83 of the light-emitting diode (LED) and the n-cathode layer 85 of the driving thyristor S. That is, without the tunnel junction layer 84, the p-anode layer 83 of the LED and the n-cathode layer 85 of the driving thyristor S are in a reverse bias state, making it difficult for current to flow from the n-cathode layer 85 of the driving thyristor S to the p-anode layer 83 of the LED. The tunnel junction layer 84 is formed by adding a high concentration of p-type impurities to the p-anode layer 83 side of the LED. ++ The n-type impurities are added at a high concentration to the n-cathode layer 85 side of the driving thyristor S. ++ The tunnel junction. In tunnel junction layer 84, due to the narrow width of the depletion region, electrons from n under reverse bias... ++ The guide belt (guide belt) tunnel on the side of the layer enters p ++ The valence electron band (valence band) on the side of the layer. Therefore, current can easily flow from the n cathode layer 85 of the driving thyristor S to the p anode layer 83 of the light-emitting diode LED.

[0154] Furthermore, a p-ohm electrode 321 is formed on the p-anode layer 88, which is in ohmic contact with the p-anode layer 88. The p-ohm electrode 321 is connected to the light-emitting electrode 72 through a through-hole formed in the insulating layer 89.

[0155] Furthermore, an n-gate electrode 331 is formed that makes ohmic contact with the n-gate layer 87 exposed by etching away a portion of the p-anode layer 88. The n-gate electrode 331 reduces the resistance of the exposed n-gate layer 87.

[0156] In addition, the light-emitting electrode 72 and the n-gate electrode 331 are insulated from each other by means of the insulating layer 89.

[0157] like Figure 11 As shown in (a), between the light emission outlet 341 of LED1 and the light emission outlet 341 of LED2, which are adjacent to each other and separated by the n gate electrode 331, the n cathode layer 81, the light emission layer 82, the p anode layer 83, the tunnel junction layer 84, the n cathode layer 85, the p gate layer 86, the n gate layer 87 and the p anode layer 88 that constitute the LED and drive the thyristor S are continuous.

[0158] like Figure 11As shown in (b), the light emission outlet 341 of LED3 and the light emission outlet 341 of LED4 are adjacent to each other through a hole 342. The hole 342 is formed by removing the p-anode layer 88, n-gate layer 87, p-gate layer 86, n-cathode layer 85, tunnel junction layer 84, p-anode layer 83, light-emitting layer 82, and n-cathode layer 81. Then, by oxidizing the current-limiting layer contained in the p-anode layer 83 through the hole 342, the portion near the hole 342 becomes a current-blocking portion β where current flow is difficult. On the other hand, the portion away from the hole 342 remains unoxidized. That is, the unoxidized portion becomes the current-passing portion α through which current flows. Multiple holes 342 are provided around the light emission outlet 341. Therefore, the current-passing portion α is formed into a near-circular shape. The light emission outlet 341 is provided corresponding to this current-passing portion α. Therefore, even though the n cathode layer 81, p anode layer 83 and light-emitting layer 82 are continuously arranged in the light-emitting part 22, each light emission outlet 341 constitutes a light-emitting diode (LED).

[0159] On the other hand, such as Figure 11 As shown in (a), the n-cathode layer 85, p-gate layer 86, n-gate layer 87, and p-anode layer 88 constituting the driving thyristor S are continuous between the light-emitting diodes (LEDs). Therefore, the driving thyristor S operates for each light-emitting section 22. Alternatively, one driving thyristor S can be provided for multiple light-emitting diodes (LEDs) in the light-emitting section 22.

[0160] Between the light-emitting parts 22, i.e., between the island-shaped parts 301 and Figure 11 Similarly, at the right end of (a) and (b), the p-anode layer 88, n-gate layer 87, p-gate layer 86, n-cathode layer 85, tunnel junction layer 84, p-anode layer 83, light-emitting layer 82, and n-cathode layer 81 are removed. That is, the p-anode layer 83, light-emitting layer 82, and n-cathode layer 81 constituting the light-emitting diode (LED) and the p-anode layer 88, n-gate layer 87, p-gate layer 86, and n-cathode layer 85 constituting the driving thyristor S are discontinuous between the island portions 301. Therefore, each light-emitting portion 22 is individually controlled to emit light.

[0161] <Structure of Licensing Circuit 27>

[0162] Each licensed circuit 27 is composed of island-shaped portions 303 and 304 in the semiconductor layer stack, which are separated from each other by etching down to the tunnel junction layer 84. In addition, the island-shaped portions 303 corresponding to the licensed circuits 27-1, 27-2, ... are labeled as island-shaped portions 303-1, 303-2, ..., and the island-shaped portions 304 are labeled as island-shaped portions 304-1, 304-2, ...

[0163] Figure 12 This is a top view of the permitting circuit 27. Figure 12yes Figure 5 The light-emitting device 4 shown includes the permitting circuit 27-1 (island sections 303-1 and 304-1). Island sections 303-1 and 304-1 are labeled as island sections 303 and 304 for explanation. The x, y, and z directions are... Figure 5 Same. In addition, dashed lines represent wiring 25, reference voltage line 73, power supply voltage line 74, and connecting line 75, and 〇 represents through holes provided in the insulating layer 89 for connecting to these wirings.

[0164] In the permitting circuit 27, a power supply voltage line 74 and a reference voltage line 73 are arranged side by side in the y direction (see reference). Figure 5 The power supply voltage line 74 is supplied with a power supply voltage VLD, and the reference voltage line 73 is supplied with a reference voltage Vga (0V). In addition, although not shown, the reference voltage line 73 is connected to the reference voltage terminal 28 using the same island-shaped portion as the island-shaped portion 302.

[0165] The island-shaped portion 303 extends along the x-direction from the reference voltage line 73 side. Furthermore, it bends in the -y-direction and is positioned towards the -x-direction. That is, the island-shaped portion 303 is configured as a C-shape with left and right reversals. A light-emitting thyristor F and an npn bipolar transistor Tr are disposed on the island-shaped portion 303.

[0166] The light-emitting thyristor F uses region 312 formed by the p-anode layer 88 as the p-anode. A p-ohmic electrode 322 disposed on region 312 formed by the p-anode layer 88 is connected to signal terminal 24 (here, signal terminal 24-1) via a through-hole disposed in insulating layer 89. On the -x direction side of the light-emitting thyristor F, an n-gate electrode 334 is disposed on the exposed n-gate layer 87. The end of the n-gate electrode 334 on the -x direction side is connected to reference voltage line 73.

[0167] An npn bipolar transistor Tr is disposed on the -y direction side of the light-emitting thyristor F. The n-gate layer 87 on the F side serves as the emitter ([E]), and the n-gate layer 87 on the -y direction side of the light-emitting thyristor F serves as the collector ([C]). Furthermore, a p-gate layer 86 is exposed between the emitter ([E]) and the collector ([C]). The exposed p-gate layer 86 serves as the base ([B]). An n-gate electrode 335 is disposed on the n-gate layer 87 on the collector ([C]) side. On the other hand, an n-gate electrode 336 is disposed on the n-gate layer 87 extending towards the -x direction. The n-gate electrode 336 is connected to wiring 25 (here, wiring 25-1) via a via disposed in the insulating layer 89. The n-gate layer 87 between the n-gate 335 and the n-gate 336 serves as a resistor R1.

[0168] A resistor R2 is provided in the island portion 304. The region 313 of the island portion 304 formed by the p-anode layer 88 serves as the resistor R2. P-ohm electrodes 323 and 324 are provided at both ends of the region 313 in the x-direction. Furthermore, the p-ohm electrode 323 on the x-direction side is connected to the n-gate electrode 335 of the island portion 303 via a through-hole provided in the insulating layer 89 and a connecting line 75. The p-ohm electrode on the x-direction side, together with the n-gate electrode 337 provided on the exposed n-gate layer 87 of the island portion 304, is connected to the power supply voltage line 74 via a through-hole provided in the insulating layer 89.

[0169] Figure 13 This is a cross-sectional view of the permitting circuit 27. Figure 13 (a) is Figure 12 A cross-sectional view along line XIIIA-XIIIA′. Figure 13 (b) is Figure 12 A sectional view along the XIIIB-XIIIB′ line. Figure 13 In (a), the right direction of the paper is the y direction, the surface direction of the paper is the x direction, and the top direction of the paper is the z direction.

[0170] like Figure 13 As shown in (a), the light-emitting licensed thyristor F is configured with an n-cathode layer 85 on the tunnel junction layer 84 as the cathode ([K]), a p-gate layer 86 as the p-gate ([G2]), an n-gate layer 87 as the n-gate ([G1]), and a p-node layer 88 as the p-anode ([A]). The npn bipolar transistor Tr is configured by etching the p-gate layer 86 to expose it. The npn bipolar transistor Tr is configured with an n-gate layer 87 as the emitter ([E]), a p-gate layer 86 as the base ([B]), and an n-gate layer 87 as the collector ([C]). That is, the n-gate layer 87, which is the n-gate ([G1]) of the light-emitting licensed thyristor F, also serves as the emitter ([E]) of the npn bipolar transistor Tr. The p-gate layer 86, which is the p-gate ([G2]) of the light-emitting licensed thyristor F, also serves as the base ([B]) of the npn bipolar transistor Tr.

[0171] like Figure 13 As shown in (b), the n-gate electrode 334 on the n-gate layer 87 is connected to the reference voltage line 73. Through the reference voltage line 73, which is supplied with the reference voltage Vga (0V), the n-gate ([G1]) of the light-emitting permitting thyristor F and the emitter ([E]) of the npn bipolar transistor Tr are set to 0V. Additionally, although not shown, the p-anode layer 83, which serves as the anode of the light-emitting diode LED in the permitting circuit 27 (light-emitting permitting section 26), is connected to the reference voltage Vga (0V).

[0172] Figure 14 This is another cross-sectional view of the permitting circuit 27. Figure 14 (a) is Figure 12 A sectional view along the XIVA-XIVA′ line. Figure 14 (b) is Figure 12 A sectional view along the XIVB-XIVB′ line. Figure 14 In (a), the right direction of the paper is the y direction, the surface direction of the paper is the x direction, and the top direction of the paper is the z direction.

[0173] like Figure 14 As shown in (a), the n gate layer 87 disposed between the n gate electrodes 335 and 336 is a resistor R1.

[0174] like Figure 14 As shown in (b), the p anode layer 88 and the n gate layer 87 disposed between the p ohmic electrodes 323 and 324 of the p anode layer 88 are resistors R2.

[0175] (Structure of semiconductor layer stack)

[0176] The n-cathode layer 81, the light-emitting layer 82, and the p-anode layer 83 are semiconductor layers constituting a light-emitting diode (LED), while the n-cathode layer 85, the p-gate layer 86, the n-gate layer 87, and the p-anode layer 88 are semiconductor layers constituting a driving thyristor S and a license 27.

[0177] The following will explain in sequence.

[0178] <Substrate 80>

[0179] The substrate 80 is illustrated using n-type GaAs as an example, but it can also be p-type GaAs, intrinsic (i) GaAs without impurities. Furthermore, it can be InP, GaN, InAs, other semiconductor substrates made of group III-V or II-VI materials, sapphire, Si, Ge, etc. When the substrate is changed, the material monolithically stacked on the substrate is a material whose lattice constant is approximately matched to that of the substrate (including strain structure, strain relaxation layer, and metamorphic growth). For example, InAs, InAsSb, GaInAsSb, etc. are used on an InAs substrate; InP, InGaAsP, etc. are used on an InP substrate; GaN, AlGaN, InGaN are used on a GaN substrate or a sapphire substrate; and Si, SiGe, GaP, etc. are used on a Si substrate. However, if the substrate 80 is electrically insulating, an electrode is required to supply voltage to the n-cathode layer 81. Furthermore, when semiconductor layer stacks other than substrate 80 are attached to other support substrates and semiconductor layer stacks are disposed on other support substrates, it is not necessary to match the support substrate with the lattice constant.

[0180] <Semiconductor layers that make up a light-emitting diode (LED)>

[0181] Here, we will assume that the light-emitting diode (LED) is a VCSEL for explanation.

[0182] The n-cathode layer 81 constitutes an n-type lower distributed Bragg reflector (DBR) consisting of alternating layers of AlGaAs with different Al compositions. The light-emitting layer 82 is configured as an active region containing a quantum well layer sandwiched between an upper spacer layer and a lower spacer layer. Furthermore, the p-anode layer 83 is configured as an upper distributed Bragg reflector consisting of alternating layers of AlGaAs with different Al compositions. Hereinafter, the distributed Bragg reflector will be referred to as DBR. The optical output of the VCSEL is 4mW to 8mW, which is higher than that of other laser diodes.

[0183] The lower part of the n-type DBR constituting the n-cathode layer 81 makes Al 0.9 Ga 0.1 A stack of As and GaAs layers in pairs. The thickness of each layer in the lower DBR is λ / 4n. r (where λ is the oscillation wavelength, n) r The medium (refractive index) is used to alternately stack 40 cycles. Silicon (Si) is used as an n-type impurity to act as charge carriers. The carrier concentration is, for example, 3 × 10⁻⁶. 18 cm -3 .

[0184] The lower spacer layer constituting the light-emitting layer 82 is undoped Al. 0.6 Ga 0.4 The As layer consists of an undoped InGaAs quantum well layer and an undoped GaAs barrier layer, while the upper spacer layer is undoped Al. 0.6 Ga 0.4 As layer.

[0185] The upper p-type DBR constituting the p-anode layer 83 is configured to incorporate p-type Al 0.9 Ga 0.1 A stack of As and GaAs layers in pairs. The thickness of each layer in the upper DBR is λ / 4n. r The cells are alternately stacked in 29 cycles. Carbon (C) is used as a p-type impurity to act as charge carriers. The carrier concentration is, for example, 3 × 10⁻⁶. 18 cm -3 A p-type AlAs current-narrowing layer is provided at the bottom layer of the upper DBR208 or inside it.

[0186] The oxidation rate of p-type AlAs is faster than that of AlGaAs, and the oxidation region is oxidized from the side of hole 342 towards the interior. As Al is oxidized to form Al₂O₃, the resistance increases, thus forming the current-blocking section β. Alternatively, as the current-blocking layer, any p-type AlGaAs or AlGaAs with a high Al impurity concentration, where Al is oxidized to form Al₂O₃, can be used. The current-blocking section β can also be formed by implanting hydrogen ions (H₂O) into the semiconductor layer such as AlGaAs. + ) and form (H + (ion implantation).

[0187] <Tunnel Layer 84>

[0188] Tunnel layer 84 is a high-concentration layer with added p-type impurities. ++ Layer with high concentration of n-type impurities ++ Layered knot. n ++ Layer and p ++ For example, the impurity concentration of the layer is 1×10 20 / cm 3 High concentration. In addition, the impurity concentration in typical junctions is 10. 17 / cm 3 Taiwan ~ 10 18 / cm 3 Taiwan. ++ Layer and n ++ Layer combination (hereinafter, via p) ++ Layer / n ++ Layer marker. (For example, p) ++ GaAs / n ++ GaInP, p ++ AlGaAs / n ++ GaInP, p ++ GaAs / n ++ GaAs, p ++ AlGaAs / n ++ AlGaAs, p ++ InGaAs / n ++ InGaAs, p ++ GaInAsP / n ++ GaInAsP, p ++ GaAsSb / n ++ GaAsSb. Alternatively, a combination of n can be used... ++ layer or p ++ Replace the layer with another combination.

[0189] <Semiconductor layer constituting the driving thyristor S and the licensing circuit 27>

[0190] For example, the impurity concentration of the n-cathode layer 85 is 1×10⁻⁶18 / cm 3 n-type Al 0.9 GaAs. The Al content can be varied within the range of 0 to 1.

[0191] For example, the p-gate layer 86 has an impurity concentration of 1×10⁶. 17 / cm 3 p-type Al 0.9 GaAs. The Al content can be varied within the range of 0 to 1.

[0192] For example, the n-gate layer 87 has an impurity concentration of 1×10⁻⁶. 17 / cm 3 n-type Al 0.9 GaAs. The Al content can be varied within the range of 0 to 1.

[0193] For example, the impurity concentration of the p-anode layer 88 is 1×10⁸. 18 / cm 3 p-type Al 0.9 GaAs. The Al content can be varied within the range of 0 to 1.

[0194] <Manufacturing Method of Light-Emitting Device 4>

[0195] The light-emitting device 4 is manufactured as follows.

[0196] An n-cathode layer 81, a light-emitting layer 82, a p-anode layer 83, a tunnel junction layer 84, an n-cathode layer 85, a p-gate layer 86, an n-gate layer 87, and a p-anode layer 88 are sequentially stacked on a substrate 80. Next, the p-anode layer 88, the n-gate layer 87, the p-gate layer 86, the n-cathode layer 85, the tunnel junction layer 84, the p-anode layer 83, the light-emitting layer 82, and the n-cathode layer 81 are etched to form portions separating the light-emitting portions 22 and the light-emitting permitting portions 26, as well as holes 342.

[0197] Then, in an oxidizing atmosphere, the current-limiting layer in the p-anode layer 83 is oxidized from the side of the hole 342 to form the current-blocking part β.

[0198] Next, a portion of the p-anode layer 88 is etched to expose the surface of the n-gate layer 87. Then, p-ohmic electrodes 321 and 322 are formed on the p-anode layer 88, and n-gate electrodes 331, 332, 333, 334, 335, 336, and 337, which make ohmic contact with the n-gate layer 87, are formed on the n-gate layer 87. Furthermore, the p-ohmic electrodes 321 and 322 are, for example, composed of Au (AuZn) containing Zn that makes ohmic contact with p-type AlGaAs. The n-gate electrodes 331, 332, 333, 334, 335, 336, and 337 are, for example, composed of Au (AuGe) containing Ge that makes ohmic contact with n-type AlGaAs.

[0199] The insulating layer 89, p-anode layer 88, n-gate layer 87, p-gate layer 86, n-cathode layer 85, and tunnel junction layer 84 are etched to form the light emission exit 341 and island portions 303 and 304. Next, the insulating layer 89 is formed on the front surface. Furthermore, the insulating layer 89 may be, for example, SiO2 or SiN.

[0200] Then, a through hole is formed in the insulating layer 89 of the p-ohm electrode 321 to form a light-emitting electrode 72, a reference voltage line 73, a power supply voltage line 74, a connecting line 75, and a signal terminal 24.

[0201] As described above, if a light-emitting diode (LED) and a driving thyristor S are stacked, the light emission of the LED can be controlled by switching the driving thyristor S from the off state to the on state. That is, compared with the case where the LED and driving thyristor S are not stacked, the light emission of the LED becomes easier to control.

[0202] In this embodiment, as an example of a light-emitting element, a light-emitting diode (LED) and a driving thyristor (S) connected in series are sequentially disposed on the substrate 80. Alternatively, the driving thyristor (S) and the LED can be sequentially stacked on the substrate 80.

[0203] Furthermore, in this embodiment, the substrate 80 is set as an n-type substrate, but it can also be set as a p-type substrate to form a light-emitting device 4 with opposite polarities. In this case, the light-emitting diodes (LEDs) and driving thyristors (S) connected in series can be sequentially arranged on the substrate 80, or the driving thyristors (S) and LEDs can be sequentially stacked.

[0204] Furthermore, in this embodiment, a series-connected light-emitting diode (LED) and a driving thyristor (S) are used as an example of light-emitting elements. However, it is also possible to have the function of driving the thyristor to emit light without using a light-emitting diode (LED).

[0205] In this embodiment, the light-emitting portions 22 are configured such that the light-emitting elements (LEDs in this embodiment) of the same light-emitting portion 22 are adjacent to each other. This simplifies the structure of the light-emitting portions 22. However, it is not necessary for the light-emitting elements to be fixedly arranged; the light-emitting elements connected to the same signal terminals 24 of the terminal portions 23 can be considered as a single light-emitting portion 22.

[0206] In this embodiment, an example of the light-emitting device 4 being used together with the 3D sensor 5 is shown, but it is not limited to this. It can also be applied to light-emitting devices used for optical transmission; in this case, it can also be combined with an optical transmission path, allowing the use of a permitting signal. Permitted light emission can occur in the same light transmission path or in different light transmission paths.

Claims

1. A light-emitting device, comprising: The light-emitting part includes a light-emitting element that functions as a thyristor; A light-emitting electrode that applies a first voltage to the light-emitting part in order to emit light; A light-emitting permitting thyristor, which permits the light-emitting element to emit light using a second voltage set lower than the first voltage and independent of the first voltage; and A substrate on which the light-emitting part and the light-emitting permitting thyristor are sharedly disposed. The light-emitting part is composed of one or more of the light-emitting elements. Each of the plurality of light-emitting parts is provided with a light-emitting permitting thyristor. In the substrate, the light-emitting thyristor is disposed between the component supplying the second voltage, which is disposed outside the substrate, and the light-emitting part. The light-emitting device includes a terminal portion that supplies the second voltage to each of the plurality of light-emitting permitting thyristors disposed in each of the plurality of light-emitting portions. The substrate has: The first side and the second side are opposite each other; and The third and fourth sides connect the first and second sides and are positioned opposite each other. The component supplying the second voltage is disposed on the first side. The terminal portion is disposed on any one or both of the portions on the first side, the third side and the fourth side of the substrate where the light-emitting license thyristor is disposed.

2. The light-emitting device according to claim 1, wherein, The light-emitting device includes other terminals for supplying a reference voltage. The other terminal portions are disposed on the substrate.

3. A light-emitting device, comprising: The light-emitting part includes a light-emitting element that functions as a thyristor; A light-emitting electrode, which applies a first voltage to the light-emitting part for emitting light; and A light-emitting permitting thyristor that permits the light-emitting element to emit light using a second voltage that is lower than the first voltage and is independent of the first voltage; as well as A bipolar transistor, which is connected to the light-emitting thyristor, The light-emitting element comprises: Surface-emitting diode; as well as A driving thyristor, which is stacked on top of a light-emitting diode (LED), causes the LED to emit light by becoming in a conducting state. The bipolar transistor is configured to be connected to the driving thyristor. When the light-emitting thyristor is in the on state, the bipolar transistor becomes in the on state, thereby enabling the driving thyristor to switch to the on state.

4. The light-emitting device according to claim 3, wherein, The surface-emitting diode is a vertical resonator surface-emitting laser.

5. A measuring device comprising: The light-emitting device according to any one of claims 1 to 4; and A three-dimensional sensor that receives reflected light from a measured object that has been illuminated by light emitted from the light-emitting device.

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