Gas supply device, vacuum processing device, and gas supply method

Abstract

The present invention provides a gas processing device capable of effectively suppressing adverse conditions caused by backflow of process gas to the upstream side when processing is performed using process gas in a chamber. A gas supply device that supplies gas to a processing chamber that processes a test material includes: ports that are respectively connected to gas sources of a plurality of gases including a purge gas and a processing gas; and a collective pipe that causes the plurality of gases supplied from the ports to respectively converge and flow, a gas flow path through which gas supplied from a port connected to a gas source of the purge gas flows being formed at the most upstream side of the collective pipe.

Description

Technical Field

[0001] This invention relates to a gas supply device, a vacuum processing device, and a gas supply method. Background Technology

[0002] Semiconductor manufacturing equipment uses high-purity process gases with various gas properties to process materials such as wafers in the fabrication of electrical components such as semiconductor elements, liquid crystal elements, solar cells, and MEMS measuring devices. Therefore, it is an indispensable and important industrial machine in the world today.

[0003] In these semiconductor manufacturing facilities, the supply of process gases is controlled according to the processing information of each step of the set processing recipe. For example, mass flow rate controllers (MFC) based on thermal sensors and pressure flow rate controllers (PFC) are used to control the gas flow rate.

[0004] Typically, the supply / stop of process gases is controlled by opening and closing gas valves configured before and after these flow controllers. This control allows individual process gases, or mixtures of multiple process gases whose mixing ratio is controlled by gas flow rate, to be introduced into the processing chamber or reactor (cavity) containing the workpiece. Sometimes, further mixing with other process gases is also possible.

[0005] The gases introduced into the chamber are plasma-enhanced, activated at high temperatures, or ionized and accelerated in an electric field, thereby causing a surface reaction on the processed material. Here, surface reaction refers to various types of etching, ashing of unwanted organic-containing masks, dry removal of surface materials from the workpiece using physical ion-based sputtering etching, film formation on the workpiece surface due to sputtering of the target material, or formation of deposits resulting from material reactions using CVD (chemical vapor deposition), surface modification of the workpiece (hydrophobic, hydrophilic, etc.), injection of specific elements or molecules from the workpiece surface into the interior, or thermal diffusion. Process gases are utilized in these various surface treatments depending on the type of gas used and the activation method employed.

[0006] The supply and control of process gases are typically as follows. For example, the opening and closing of normally closed pneumatic valves are usually used to supply or stop the process gas to a chamber.

[0007] In the step of supplying the process gas, power is supplied to the solenoid valve that supplies the process gas, opening the solenoid valve and supplying pressurized air from the air source to the pneumatic valve located in the process gas supply piping. The pneumatic valve then opens, supplying the process gas to the chamber. In the step of stopping the process gas supply, the solenoid valve is closed to stop the supply of pressurized air, residual air is vented, and the pneumatic valve for the process gas is closed, thus ceasing the gas supply.

[0008] If an undesirable condition such as an error in pressure adjustment or a decrease in gas flow rate, which is unacceptable in formula control, is detected, the processing of that step in the formula will be interrupted. In response to this detection, the solenoid valve can be closed, blocking the supply of pressurized air to the pneumatic valve, closing the pneumatic valve, and stopping the injection of process gas.

[0009] This step involves shutting off only the pneumatic valves for hazardous or highly reactive process gases. In contrast, inactive and relatively safe gases such as argon (Ar) and nitrogen (N2), used for purging and dilution, may continue to flow even if adverse conditions are detected, in order to prevent foreign matter (particles) from adhering to the workpiece.

[0010] Furthermore, in the event of a power supply error or power outage, the solenoid valve closes simultaneously, cutting off the supply of pressurized air. As a result, all pneumatic valves close, stopping the supply of all process gases to the chamber, thereby enabling safe control of the semiconductor manufacturing device.

[0011] In addition, regarding the flow control of process gases, MFC (Mechanical Gas Flow Control) uses thermal sensors to monitor the heat transferred by gas molecules and controls the opening of the orifice according to this heat to obtain the desired gas flow rate. In contrast, the more recently used PFC (Programmable Gas Flow Control) uses sonic control of the gas normally flowing through the orifice (controlling the pressure upstream of the orifice to approximately twice or more the pressure downstream of the orifice to make the gas velocity sonic), thereby utilizing the proportionality between pressure and flow rate (critical expansion condition) upstream of the orifice to obtain the specified flow rate.

[0012] In PFC, the pressure upstream of the throttling orifice is controlled by opening and closing a valve that supplies gas upstream, thereby achieving the desired gas flow rate. Alternatively, instead of using a throttling orifice, a resistance element is installed internally to facilitate gas flow, and flow control is achieved based on the pressure characteristics of each gas.

[0013] In control systems employing these MFC and PFC methods, pneumatic valves are configured before or after controlling the flow rate of each process gas to introduce the controlled process gas into the chamber.

[0014] Furthermore, with advancements in microfabrication in semiconductor device manufacturing, there is a growing demand for improved process gas control aimed at achieving higher precision. Specifically, this requires further minimizing metal contamination and the generation of foreign matter (particles), and achieving high selectivity in dimensional accuracy control, film thickness control, and etching (minimizing the removal of material other than the target material by cutting away).

[0015] To address these requirements, various measures are employed, including using previously unused, more reactive gases to control complex reactions during processing; conversely, using inert gases such as Ar, He, and N2 to more precisely dilute process gases and suppress processing speed; cyclically switching gas types to allow the reaction to progress in stages; and implementing more stringent removal of corrosive gases after use. Therefore, a valve unit structure and control system capable of suppressing the adhesion of contaminants and foreign matter to the gas supply is needed.

[0016] This issue will be explained in detail. In recent equipment, there is an increasing trend of mixing flammable gases, oxidizing gases, or spontaneously combustible gases within the same chamber. Without control over this mixture within a more complex reaction system, achieving the desired processing performance becomes difficult. When using such gases, sometimes a solid is formed simply by mixing the two gases within the gas piping, even without specifically providing energy to propel the reaction. In this case, it is easier for the formed solid to backflow, causing flow controller malfunction, or for the gas piping to become blocked, or for foreign matter (particles) to adhere to the processed material, among other adverse conditions.

[0017] From the perspective of ensuring safety and avoiding adverse conditions, it is necessary to introduce flammable gases, oxidizing gases, or spontaneously combustible gases, as well as two immiscible gases, into the chamber separately through different process gas pipelines according to their respective characteristics. Since the chamber is heated, it is important to suppress the adhesion of solids to the inner wall of the chamber and maintain cleanliness. Furthermore, the gas introduced into the chamber is managed, for example, by maintaining and monitoring a pressure that does not exceed atmospheric pressure after the reaction, even in the event of explosive combustion through the reaction, thus preventing the chamber from being destroyed—a vacuum state. In the handling of workpieces, pretreatment for pressure adjustment during processing, and posttreatment for venting residual gases, the adhesion of foreign matter is suppressed by placing the surface of the workpiece under a laminar airflow.

[0018] The issues concerning the flow of process gases for gas processing are described. During gas processing, there are cases where the process gas flows alone (100%), or where it is diluted with other gases (such as Ar) and the process gas is less than 100% of the total gas, or where it is mixed with other process gases and then flowed.

[0019] Furthermore, sometimes a series of processes is performed, in which the process gas is allowed to flow for a certain period of time, followed by the flow of an inert process gas for purging purposes. During this purging period, other process gases are supplied through other gas supply lines, and then purging gas is flowed through these other process gas lines. It is also necessary to consider methods such as ALD (Atomic Layer Deposition) and ALE (Atomic Layer Etching), which involve treating the changing types of gases supplied to the chamber over time as a cycle and repeating this process multiple times.

[0020] In addition to the main processes of mixing / dilution of various gases or circulating and switching gases during the processing according to the formula, there are also post-processing steps such as removing gases during the handling of the workpiece, adjusting the pressure in the chamber before plasma heating, performing pretreatment to remove moisture from the surface of the workpiece, and venting any remaining gases in the chamber before removing the workpiece.

[0021] In unused steps where the gas is not introduced into the chamber, gas flow control is typically not performed. Instead, the pneumatic valve downstream of the aforementioned process gas flow controller, or both upstream and downstream pneumatic valves, is closed. This pneumatic valve is not directly mounted on the chamber wall, but in many devices, it is housed together with the flow controller in a gas unit (gas box) separate from the chamber.

[0022] Existing technical documents

[0023] Patent documents

[0024] Patent Document 1: Japanese Patent Application Publication No. 2008-533731

[0025] Patent Document 2: Japanese Patent Application Publication No. 2004-183743

[0026] Patent Document 3: International Publication No. 2009 / 122683

[0027] Patent Document 4: International Publication No. 2013 / 046660 Summary of the Invention

[0028] The problem that the invention aims to solve

[0029] Patent Document 1 schematically illustrates the structure of a process gas supply line. This structure includes a pipeline (for gas discarding) that bypasses the chamber to allow the oxidizing gas system and the Si-based gas system to flow independently to the exhaust system. Furthermore, the chamber has a structure that ensures continuous gas flow, and by switching valves, the gas supplied to the wafer within the chamber, which serves as the workpiece, can be pulsed and cyclically switched. A control method for this structure is also disclosed in Patent Document 1.

[0030] However, in the gas piping of the gas discarding line, gas flows when the gas is discarded, but does not flow when the gas is directed toward the chamber side. Therefore, there is a problem that even when the valve of the gas discarding line is closed, the gas in the exhaust system diffuses back toward the piping that connects the valve to the exhaust piping at the discarding destination.

[0031] The gas from the backdiffusion also contains unreacted process gases, reactive species (free radicals, etc.), and reaction products, which adhere, react, and accumulate within the piping. In devices with a similar structure, the following defect was observed: foreign matter adheres to the seat of a pneumatic valve designed to discard gas, and the opening and closing action causes particles to diffuse into the piping supplying the chamber, resulting in particles becoming particulate matter on the wafer, thus reducing the yield rate (processing output) of the workpiece.

[0032] Furthermore, in this patent document 1, multiple process gases are mixed and flowed upstream of the gas valve in the final section supplied to the chamber before entering the chamber, or they flow alternately using a common gas piping. Therefore, it is obviously not possible to use the aforementioned combination of non-mixed gas types.

[0033] For gases that do not flow together, one approach is to simultaneously establish a supply system different from the gas supply system in Patent Document 1 and to independently set up a supply line to the chamber. However, even if two supply lines are set up in the chamber and valves for the final section of the chamber supply in Patent Document 1 are installed on each of the two supply lines, it is still not possible to strictly suppress the back diffusion of other process gases.

[0034] The reason is that in the apparatus for processing using these process gases, in order to form a proper gas flow and gas mixing state for the workpiece, a component called a preparatory space (ante-chamber), baffle, or gas shower plate is provided on the upstream side of the gas flow that is in contact with the chamber space. There is also a gas path for the process gas to flow separately at a position downstream of the pneumatic valve of the aforementioned final section.

[0035] If other process gases, especially highly corrosive gases, diffuse back toward such components, they react with moisture in the air when the atmosphere is open, causing corrosion to preparatory spaces (anterooms), baffles, and shower panels that should not be in normal contact with corrosive gases. This can lead to problems such as metal contamination or increased size of parts to be replaced during maintenance.

[0036] Furthermore, after treatment, it is sometimes important to remove blockages to efficiently and quickly remove process gases trapped in the piping. Additionally, when implementing cyclical gas switching processes, rapid switching of the process gas is required.

[0037] For example, Patent Document 2 describes a method where a manifold connecting to the integrated valve is configured to minimize the piping length on the diaphragm side of each valve. There are special cases where valve components are directly assembled into the integrated valve block and cannot be replaced independently, but a design to reduce dead volume is implemented. This demonstrates the importance of reducing dead volume to improve gas displacement. However, dead volume still exists in the gas pipeline connected to this block and cannot be zeroed out.

[0038] Furthermore, Patent Document 3 shows the structure of a special three-way valve. This special three-way valve is an example applied to a solenoid valve, but no special changes are needed when the structure of the gas contact section is applied to a pneumatic valve. In this structure, (gas) flow without dead space can be achieved, but the configuration structure of each gas valve when mixing process gases and the method of flow control are not specified.

[0039] Furthermore, Patent Document 4 shows the structure of an integrated valve that supplies multiple gases using a pressure-type flow controller. In this integrated valve, devices are arranged on both sides of the back of the instrument, and a common purging pipeline is also provided. However, during gas switching, a dead volume exists even though a special pneumatic three-way valve is used.

[0040] Typically, a pressure regulating valve for adjusting the processing pressure is installed at the gas outlet (exhaust port) from the chamber where gas processing is performed. Therefore, the pressure downstream of the pressure regulating valve is naturally lower than the chamber pressure. If the gas supply to the chamber is not changed, and gas is discharged downstream of this pressure regulating valve for gas release, the downstream pressure rises, and the chamber pressure also rises. Therefore, it is possible for discarded gas to flow back into the chamber, or for the gas discharge rate to decrease, thus affecting the gas processing performed within the chamber.

[0041] In manufacturing apparatuses, there are also those that utilize mechanical booster pumps or turbomolecular pumps at the outlet of the gas from the chamber to enhance exhaust capacity. In such apparatuses, the effects of backflow into the chamber and reduced exhaust velocity at the aforementioned timing of gas discarding can be minimized to a negligible degree. However, when simultaneously initiating the opening of the aforementioned pneumatic valves and adjusting the gas flow rates of the MFC and PFC, a certain amount of time (typically several seconds) is required for the flow rates to stabilize. Consequently, time is also needed for the chamber pressure to stabilize.

[0042] As shown here, the objective is to improve gas controllability, i.e., the time controllability of the presence / removal of the process gas during supply / stop, without setting dead volume in the process gas pipeline, and to provide clean gas pipelines and gas supply systems.

[0043] The purpose of this invention is to provide a gas supply device, a vacuum processing device, and a gas supply method that can effectively suppress adverse conditions caused by backflow of process gas to the upstream side when processing with process gas in a chamber.

[0044] Solution for solving the problem

[0045] To solve the above-mentioned problems, one representative gas supply device of the present invention achieves this by means of supplying gas to a processing chamber for processing samples, characterized in that...

[0046] The gas supply device includes:

[0047] The port is connected to a gas source containing various gases, including purging gas and processing gas; and

[0048] A manifold piping system is provided for the various gases supplied from the port to converge and flow.

[0049] A gas flow path for supplying gas from a port connected to the gas source for the purging gas is formed on the upstream side of the manifold.

[0050] Invention Effects

[0051] According to the present invention, a gas supply device, a vacuum processing device, and a gas supply method are provided that can effectively suppress adverse conditions caused by backflow of process gas to the upstream side when processing is performed using process gas in a chamber.

[0052] Other issues, structures, and effects not mentioned above will be clarified through the following description of the implementation methods. Attached Figure Description

[0053] Figure 1This is a schematic diagram illustrating a gas supply device and a vacuum processing device according to an embodiment of the present invention.

[0054] Figure 2 It includes from Figure 1 A structural diagram of the valve block of the extracted gas supply device.

[0055] Figure 3 It was removed Figure 2 The diagram shows a portion of the structure and clarifies the gas path.

[0056] Figure 4 Is Figure 2 A sectional view obtained by cutting along the XX line in the block.

[0057] Figure 5 This is a flowchart illustrating an example of gas processing.

[0058] Figure 6 It is a diagram showing the flow of gas in a bulk of flammable gas and a bulk of combustion-supporting gas.

[0059] Figure 7 It is a diagram showing the flow of gas in a bulk of flammable gas and a bulk of combustion-supporting gas.

[0060] Figure 8 It is a diagram showing the flow of gas in a bulk of flammable gas and a bulk of combustion-supporting gas.

[0061] Figure 9 It is a diagram showing the flow of gas in a bulk of flammable gas and a bulk of combustion-supporting gas.

[0062] Figure 10 It is a diagram showing the flow of gas in a bulk of flammable gas and a bulk of combustion-supporting gas.

[0063] Figure 11 It is a diagram showing the flow of gas in a bulk of flammable gas and a bulk of combustion-supporting gas.

[0064] Figure 12 It is a diagram showing the flow of gas in a bulk of flammable gas and a bulk of combustion-supporting gas.

[0065] Figure 13 This illustrates another embodiment with Figure 1 Same legend. Detailed Implementation

[0066] To overcome the problems of previous technologies, in this embodiment, the gas piping is modularized according to the properties of the process gas, and the purging gas is used in separate groups. The gas flow control unit for dilution is only used for dilution and is provided separately from the gas flow control unit for purging. Of course, if the process gas is always used as a single unit without dilution, a dilution-side flow control unit is not needed.

[0067] The purging gas uses Ar or other rare gases, and depending on the target gas being treated, gases such as nitrogen, which are inactive in the piping, are used. Flow controllers for these purging gases are installed at the upstream end of the common flow manifold. Additionally, depending on the treatment, a confluence point for the circulating process gases is located downstream of the manifold. During the circulating gas flow, the purging gas (also called the purging gas) does not flow simultaneously with the process gas (also called the treatment gas), and only serves the function of purging the piping.

[0068] To address the challenges of back diffusion, exhaust velocity reduction, and the time required for gas flow stabilization during gas switching, a solution is proposed: supply lines to the chamber (also called supply piping or first gas lines) and discard gas lines to the common exhaust system (also called exhaust system or second gas lines) are installed separately for each gas category. This ensures that the process gas flows through one of these lines throughout the processing time of the workpiece, while purge gas flows through a different line. Preferably, two pneumatic valves are installed downstream of the MFC and PFC for process gas flow control, and downstream of the MFC and PFC for purge gas flow control; one valve is connected to the chamber supply line, and the other is connected to the discard gas line to the exhaust system.

[0069] With both process gas and purge gas maintained at a stable flow rate controlled by a gas flow controller, the gas supply destination (inside the chamber) and disposal destination (outside the chamber) can be switched by switching pneumatic valves within a very short time (on the order of seconds). Furthermore, even when switching between the gases, if their respective flow rates are properly adjusted, pressure fluctuations on the chamber side can be suppressed to the target pressure within the extremely short valve switching time.

[0070] When the gas is cyclically switched and flowed according to the gas processing, the entire supply line to the chamber and the entire discard gas line to the exhaust system are always full of gas, and the outflow destination is managed to be under positive pressure, so back diffusion will not occur.

[0071] Next, the structure of the valve capable of suppressing dead volume was studied within the structure of the gas supply device. In cases where process gas and purge gas flow alternately, it was determined whether a truly dead-volume-free gas flow should be established, and how the timing should be set.

[0072] Eliminating dead volume is crucial for process gases, or process gases already mixed with dilution gases. Therefore, it is essential to urgently shut off the process gas supply. The purge gas should be a common argon, other rare gases, or a gas with low reactivity and minimal impact on surface reactions, such as nitrogen. Even if the purge gas flows out after the process is stopped, its inherent low reactivity means its impact on surface reactions is minimal. Therefore, considering a dead volume-free structure for process gases (or diluted process gases) is even more important.

[0073] The purge gas supplied from the upstream side of the manifold flows from the diaphragm side to the anti-diaphragm side of the central orifice in a special three-way valve (details described later). Conversely, the process gas (or diluted process gas) flows out from the anti-diaphragm side of the central orifice to the diaphragm side in the special three-way valve. This allows the purge gas flowing from the upstream side to push the process gas downstream without dead volume when switching to purge gas. In other words, the manifold itself is formed by a gas flow path on the diaphragm side that allows gas to pass through without obstructing gas flow, and is configured to allow the process gas flowing out through the opening action of the diaphragm of the special three-way valve to converge in the manifold.

[0074] By configuring the structure in this way, a gas supply device capable of suppressing dead volume and purging process gas (or diluted process gas) can be constructed. The upstream gas valve for purging gas outflow is configured such that the purging gas, which is flow-controlled by the opening action of the diaphragm, flows out from the diaphragm side to the reverse diaphragm side. The gas contact portion when the process gas flows out into the manifold is only the central pressing portion of the diaphragm, and as the upstream terminal of the manifold, it has no dead volume.

[0075] Furthermore, it is desirable that the gas supply device independently includes a three-way valve that is opened and closed via a diaphragm, a flow controller for the process gas, and a flow controller for the dilution gas used to dilute the process gas. A gas flow path is formed on the diaphragm side of the three-way valve, allowing the dilution gas to pass through without obstructing gas flow. The gas supply device is configured such that the process gas flows out and merges with the gas flow path through which the dilution gas can pass by opening the diaphragm of the three-way valve, thereby controlling the flow rate of the process gas. In this case, the gas valve downstream of the flow controller that allows the dilution gas (also called the dilution gas) to flow out is configured to allow the dilution gas with controlled flow rate to flow out from the diaphragm side to the reverse diaphragm side. The contact gas portion of the process gas merging into the gas flow path is only the central pressing portion of the diaphragm, serving as the upstream terminal of the gas flow path and having no dead volume. Here, the contact gas portion is the part that comes into contact with the surface due to the diffusion of the reactive gas.

[0076] Furthermore, when gas is intermittently (cyclically) supplied to the processing chamber in the gas supply block, the gas flow is always controlled by the flow controller that controls the type of purging gas and the type of gas used. At the same time, the intermittent supply of gas to the processing chamber is achieved by alternately opening and closing valves installed in the manifold connected to the supply pipe to the processing chamber, or valves installed in the manifold connected to the exhaust system for discarding gas. Moreover, by allowing purging gas to flow from the valve for purging gas installed at the uppermost end of the manifold to the supply line side different from the gas supply line, gas can always flow to both manifolds and both supply pipes.

[0077] In particular, when there are two or more gas supply blocks that intermittently supply gas for processing, the simultaneous opening and closing of the gas supply valves that form a manifold can be prevented, for example, by interlocking, so that the gas for processing supplied from each gas supply block is not simultaneously supplied to the processing chamber or the exhaust system.

[0078] Alternatively, purging gas can be supplied from the upstream end of the manifold while treatment gas flows out midway through the manifold. It is also possible to perform a process where, after sample treatment, the supply of treatment gas is stopped, allowing purging gas to flow simultaneously into both the supply and exhaust lines.

[0079] The structure of the process gas dilution section is described below. A two-way valve for dilution gas introduces dilution gas to the diaphragm side and allows it to flow out from the reverse diaphragm side of the central orifice. Downstream, a special three-way valve for process gas allows the outflowing dilution gas to flow in communication with the diaphragm side, while the process gas flows out from the reverse diaphragm side of the central orifice to the diaphragm side supplying the dilution gas. The structure is the same as that for purging gas, but the control allows the process gas valve and the dilution gas valve to open simultaneously. By opening the dilution valve first and then the process gas valve, the outflow of high-concentration, insufficiently diluted process gas can be suppressed. In this structure, dilution gas can be added to the process gas without the process gas flowing out of the dead volume.

[0080] Alternatively, in the final step of the process, after reaching a stage where no further flow of process gas is required, the process gas valve can be shut off, allowing only the dilution gas to flow. This method is particularly effective for controlling corrosive gases by keeping the diaphragm side clean and reducing the concentration of corrosive gases.

[0081] According to the gas supply device of the present invention, it is possible to supply purge gas to process gases requiring purging without dead volume, and to supply dilution gas to process gases requiring dilution without dead volume. It is also possible to control the replacement rate of the gas required for the vacuum processing device within the valve switching time (typically within sub-seconds), thereby contributing to improved gas processing performance (increased processing accuracy and reduced processing time). Furthermore, by ensuring continuous gas flow in both the chamber pipeline (supply piping) and the exhaust pipeline (exhaust system), and by installing gas valves at the final sections of these pipelines, back diffusion of other gases and reaction products can be suppressed. That is, during the process processing of the sample, purge gas is continuously flowing upstream of the manifold supplying the processing chamber from the side of the entire gas supply block. Depending on the progress of each processing step, the specified process gas is selected by opening and closing the processing chamber supply valves for each process gas forming the manifold, and processing is performed. This ensures that gas is continuously flowing in the supply piping towards the processing chamber for any gas supply block.

[0082] Therefore, a gas supply device is provided that can suppress particulates from the gas pipeline and perform high-precision gas switching control when supplying gas to a vacuum processing apparatus for etching, film deposition, ashing, and ALD / ALE-based processing of front-end devices. As a result, it is possible to ensure improved device performance and reproducibility of each processing step due to the high-precision processing of the vacuum processing apparatus, and to achieve improved yield due to particulate reduction.

[0083] The following uses Figures 1-12 The various embodiments of the present invention will be described in detail.

[0084] [Implementation Method 1]

[0085] The gas supply device and gas supply method for controlling the flow and flow path of the gas in this embodiment will be described. Figure 1 In this process, the vacuum processing device (not shown as a whole) connected to the gas supply device has a chamber 3 (reactor, etc.), which houses a worktable 2 for mounting the workpiece 1 (sample) inside the chamber 3, is isolated from the atmosphere and is set to a predetermined internal pressure.

[0086] A gas dispersion chamber 4 (sub-chamber) is provided on the upper part of the chamber 3 opposite to the workbench 2. Inside the gas dispersion chamber 4, from top to bottom, a top plate 5, a partition 6a, a gas dispersion plate 7a, a partition 6b, a gas dispersion plate 7b, a partition 6c, and a shower plate 8 are arranged sequentially. A halogen lamp 10, which serves as an infrared light source, is provided on the atmospheric side near the upper outer periphery of the chamber 3, surrounding the shower plate 8. Infrared light emitted from the halogen lamp 10, which is covered by the cover 12, enters the interior of the chamber 3, including the workpiece 1, through the transmission window 11. A gate valve 15 for loading and unloading the workpiece 1 is installed on the side wall of the chamber 3 and is opened and closed by a gate valve drive shaft 16.

[0087] The gas inside chamber 3 is designed to converge from chamber 3 via multiple exhaust ports (illustrated as 20a, 20b) on the back (bottom) side of workbench 2 into exhaust pipe 20, and then be evenly exhausted from the periphery of workpiece 1. The gas converging in exhaust pipe 20, after its exhaust speed is adjusted by pressure regulating valve 21, reaches main valve 22 via connecting pipe 26. Main valve 22 is open during gas processing, during workpiece 1 handling, and in an unloaded state awaiting workpiece 1, forming part of the exhaust passage.

[0088] During cleaning, parts replacement, and maintenance inside chamber 3, the main valve 22 is closed while chamber 3 is open to the atmosphere. A dry pump 25 is connected downstream of the main valve 22 and is driven to discharge gas. The gas discharged from the dry pump 25 is further treated by an exhaust gas treatment device (not shown) before being released into the atmosphere. The pressure inside chamber 3 and on the exhaust pipe 27 connecting the main valve 22 and the dry pump 25 is monitored by pressure gauges 28 and 29 connected to each other.

[0089] exist Figure 1 In the diagram, a gas chamber 30 connected to a vacuum processing device is shown, surrounded by dotted lines. The gas chamber 30, serving as a gas supply device, includes multiple solenoid valves for controlling the opening and closing of pneumatic valves (not shown), a gas leak detection function, a function for venting the casing via pipes in case of a gas leak, a function for constantly monitoring the negative pressure (vented pressure) inside the gas chamber 30, and components for performing these functions. Figure 1 In the gas tank 30, only the components that come into direct contact with the process gas are marked with symbols. The markings indicate the gas sources supplied from outside the building where the process unit is located. The ports of the 12 gas sources are marked with the reference numerals A to F and L to Q.

[0090] Figure 1 The vacuum processing apparatus is a process apparatus that uses a halogen lamp 10 to supply heat energy to the workpiece 1 to activate the gas and promote the reaction. However, it can also be a vacuum processing apparatus that uses other gas excitation means, such as plasma generated by a high-frequency power supply, or pre-forms an active gas by heating the gas dispersion chamber 4 and then blows it onto the workpiece 1. In addition, the timing of the excitation used for its processing can also be different.

[0091] Regarding the exhaust mechanism from chamber 3, in this embodiment, a dry pump 25 is used for exhaust, but an exhaust mechanism with a larger exhaust volume, such as a turbomolecular pump (not shown), can also be used between chamber 3 and the exhaust mechanism. Alternatively, other exhaust mechanisms, such as a mechanical booster pump, can also be used.

[0092] Furthermore, by heating the gas inlet pipes, chambers, exhaust ports 20a and 20b, exhaust pipe 20, connecting pipe 26, exhaust pipe 27, pressure regulating valve 21, and main valve 22, the adhesion of reaction products and gases with low vapor pressure (especially materials that liquefy at room temperature and vaporize upon heating) to their surfaces is reduced, thereby reducing adhesion to the workpiece 1. In this embodiment, a mechanism (not shown) for heating these components is also provided. Specifically, the heating temperature is adjusted to increase as the gas flows downstream from 100°C to 250°C.

[0093] It should be noted that the pressure gauges 38 and 39 installed on the combustible gas block and the pressure gauges 48 and 49 installed on the combustion-supporting gas control block monitor whether the supply pressure of the connecting pipes on which they are installed exceeds a certain pressure (most often atmospheric pressure) or whether the gas is flowing. This can detect the malfunctions of pipe blockage and valve opening / closing caused by reaction products, etc.

[0094] exist Figure 2 The middle shows that Figure 1 The gas supply device is obtained by integrating the upper half of the gas box 30, which contains a block of flammable gas, into a valve. Figure 2 The air piping for driving each pneumatic valve, the power supply for the flow controller, and the electrical wiring for electrical signals are omitted from the diagram (not shown). Each device is mounted on a base 35 for mounting the integrated valves, according to specifications.

[0095] In addition, to facilitate identification of each device, the device is directly labeled with an appliance number. Pressure gauge 38, which monitors the pressure in the manifold supplying gas to the chamber side, and pressure gauge 39, which monitors the pressure in the manifold discharging gas to the exhaust side, are also mounted on the base block of the integrated valve. In empty ports 42 and 43 where no equipment is installed, a cover for gas passage is installed instead of the equipment; however, a designated block that only allows vertical communication can also be directly installed, or a through hole can be provided on the base block side.

[0096] Figure 3 It will be installed at Figure 2 The diagram illustrates the connection of gas ports on the installation receiving side of each device after removal. The machining holes, indicated by double circles, represent gas flow paths, and the dashed lines represent flow paths connected by the lower parts of each hole. The mounting section of the special three-way valve has three double circles, and the mounting section of the two-way valve has two double circles. In the special three-way valve, the central hole is a passage opened and closed by the diaphragm, and the surrounding holes are for gas inlet and outlet, always connected on the diaphragm side. In the two-way valve, the central hole is a passage connected on the reverse diaphragm side by the opening and closing of the diaphragm, and the surrounding holes are on the diaphragm side. Process gases controlled by the C and E series and mixed with dilution gases from the B and D series, respectively, and process gases controlled by the F series, are introduced into the downstream manifolds (gas manifolds) formed by the special three-way valves of the A series at the upstream end.

[0097] In this embodiment, the upper half (including ports A to F) and the lower half (including ports L to Q) of the gas tank 30 adopt the same structure, but the upper half (gas supply block) is used for controlling combustible gases, and the lower half (gas supply block) is used for controlling combustion-supporting gases. Specifically, the types of gases supplied to each port are A: Ar, B: Ar, C: NH3, D: Ar, E: CH4, and F: H2 in the combustible gas block. On the other hand, the types of gases supplied to each port in the combustion-supporting gas block are L: Ar, M: Ar, N: NF3, O: Ar, P: Cl2, and Q: O2. It is also possible to further concentrate the incompatible gas types and add a 3-system, a 4-system, blocks, and supply pipelines, but this figure illustrates a 2-system example. That is, gas supply blocks are formed in the common manifold and the supply pipe according to the types of gases that cannot be mixed, and the manifold is set up according to each gas supply block.

[0098] exist Figure 1In this process, the process gases introduced into the gas tank 30 from various gas sources through ports A-F and L-Q pass through manual valve HV* (where * is the reference numeral for any one of A-F and L-Q corresponding to each port, the same applies below), and are then controlled by flow controller FC* via upstream valve G3*, and directed to downstream valve G2*. Then, each process gas flows out through valve G1C* of the pipeline leading to the chamber, or flows out as discarded gas through valve G1E of the pipeline leading to the exhaust pipeline. Here, the flow path of the gas flowing downstream from the gas source through port * is referred to as the * series.

[0099] exist Figure 1 In valve notation, to clearly indicate the valve's installation direction, the port on the side where the diaphragm-side connection is always (normally) closed (closed when the solenoid valve is not activated and there is no gas supply) is represented by a black triangle (▲). Therefore, the A symbol for the actuating air, surrounded by a circle, is marked at the apex of this black triangle (▲). On the other hand, the port side of the valve that is always connected to the periphery of the diaphragm is represented by a hollow triangle (△). Therefore, two-way valves are also marked with black triangles (▲) and hollow triangles (△) at 90-degree angles, but this is not limited to L-type valves marked with the usual 90-degree angle.

[0100] Figure 1 The flammable gas block has two manifolds (chamber lines and exhaust lines) for the mixed flow of gases from the A series to the F series, and the combustion-supporting gas block has two manifolds (chamber lines and exhaust lines) for the mixed flow of gases from the L series to the Q series.

[0101] Within the flammable gas chamber, a manifold (or first supply pipe) is constructed from valve G1CA to gas valve GCF1, referred to as the chamber line, and a manifold (or first discard gas pipe) is constructed from valve G1EA to exhaust valve GEF1, referred to as the exhaust line. Gas is supplied to chamber 3 via gas valve GCF1 for gas processing. Additionally, gas is discharged to exhaust pipe 27 via exhaust valve GEF1, without flowing out of the chamber.

[0102] In addition, within the combustion-supporting gas block, a manifold (or second supply pipe) is formed from valve G1CL to gas valve GCF2, which is called the chamber pipeline, and a manifold (or second discard gas pipe) is formed from valve G1EL to exhaust valve GEF2, which is called the exhaust pipeline. Gas is supplied to chamber 3 for gas processing via gas valve GCF2. Gas is discharged to exhaust pipe 27 via exhaust valve GEF2, without flowing out through the chamber.

[0103] The upstream A-series of the manifold in the flammable gas block and the upstream L-series of the manifold in the combustion-supporting gas block are configured as flow paths for the purge gas (Ar gas in this embodiment) that always flows out during gas processing or during the loading / unloading of the workpiece 1. It should be noted that the flammable gas block and the combustion-supporting gas block are roughly the same, so the following description mainly focuses on the flammable gas block.

[0104] The valves for the flammable gas blocks are pneumatic valves that use air-pressure-driven diaphragms to open and close the flow path. These valves open and close automatically according to the formula using a control device (not shown).

[0105] Figure 4 Is Figure 2 A sectional view obtained by cutting along line XX in a block. Figure 4 In this design, two valves, GC1E and GC1F, which are special three-way valves (also simply referred to as three-way valves), are mounted on a base 35 having a flow path using base blocks 35a and 35b. Although not shown in the diagram, the other valve, GC1*, is also mounted on the base 35 using base blocks 35a and 35b in the same way. Valves GC1E and GC1F have a common structure, therefore, valve GC1E will be described below.

[0106] In valve GC1E, which is a pneumatic valve, the drive part DR of a cylinder that moves the drive shaft DS up and down due to air pressure from an air source (not shown) is fixed to valve block 36. At the front end of the drive shaft DS, a diaphragm K is provided and fixedly held around the opening and closing of the orifice relative to the center.

[0107] The drive shaft DS is pressed downwards by a spring, displacing the diaphragm K according to a control signal. The pressed diaphragm K closes the central orifice, interrupting the flow of the E-series gas, indicated by the arrow on the solid line. Meanwhile, the manifold side, indicated by the dotted line, remains open around the lower part of the diaphragm K. When air is supplied and the drive shaft DS is displaced upwards, the center of the diaphragm K floats up, the central orifice opens, and thus the E-series gas, indicated by the arrow on the solid line, flows out towards the manifold side as shown by the arrow on the dotted line.

[0108] like Figure 4 As explicitly stated, the downstream passage of valve GC1E is connected to the upstream passage of valve GC1F. Therefore, regardless of the operation of valves GC1E and GC1F, the passage from the upstream side of valve GC1E to the downstream side of valve GC1F remains connected, as indicated by the arrows on the dotted lines, and the gas of series A always flows within these passages. These passages form part of a manifold.

[0109] In a bulk of flammable gas, valves G1CC, G1CE, G1CF, G1EA, G1EC, G1EE, G1EF, G2C, and G2E, configured as gas confluence points, are designated as special three-way valves. Other valves (also called two-way valves) have the following structure: they are installed in a portion of the base 35 where only an inlet flow path and a downstream flow path are formed, and the diaphragm opens and closes the inlet flow path by displacement of the drive shaft. In this embodiment, a diaphragm valve using a diaphragm-based sealing method is used, but a bellows valve that seals the inlet flow path of the central orifice using the front end of the shaft itself via a bellows drive can also be used.

[0110] Here, in a valve using a diaphragm, the side with the surrounding orifice is defined as the diaphragm side, and the side with the central orifice is defined as the anti-diaphragm side.

[0111] exist Figure 1 In this configuration, series B is the dilution gas control path for process gas C, and series D is the dilution gas control path for process gas E. For series B and D, valves G2B and G2D, located downstream of flow controllers FCB and FCD, are configured to allow dilution gases B and D to enter from the diaphragm side and flow out towards the reverse diaphragm side when the valves are open. For series C and E, valves G2C and G2E, located downstream of the flow controllers, are configured to allow process gases C and E to flow out from the diaphragm side towards the reverse diaphragm side when the valves are open.

[0112] The diaphragm side of the orifices surrounding valves G2C and G2E is always connected to the reverse diaphragm side of valves G2B and G2D, which are used for dilution gases B and D. With this configuration, in the control of each step of the formulation setting, valves B or D are not activated when dilution gases are not used; instead, valves G2B or G2D are closed. Therefore, in steps using process gases C and E from the C and E series, the gases are used without dilution.

[0113] At this point, the process gases C and E flow back and diffuse to the diaphragm side of valves G2B or G2D. In the subsequent step control, if dilution begins, the B series starts and opens valve G2B, or the D series starts and opens valve G2D. At this time, the process gases C and E that diffused to the diaphragm side of valves G2B or G2D in the previous step control are forced downstream as the dilution gases B and D begin to be supplied, but dilution can begin completely without confluence piping and with dead volume. In the case of starting a step without dilution, dilution gases B and D (here, Ar) remain on the diaphragm side of the central orifice of valves G2B or G2D, but these are usually purge gases, non-reactive, and therefore have no effect on gas handling.

[0114] Next, the function and control of the purging pipeline installed at the top of the flammable gas mass will be explained. One gas valve, GCF1, installed at the top of the gas dispersion chamber 4, is the final valve for supplying the flammable gas to the chamber. The other gas valve, GCF2, is the final valve for supplying the combustion-supporting gas to the chamber.

[0115] The process gas flowing from these gas valves GCF1 and GCF2 through nozzles 9b and 9a into chamber 3 is evenly dispersed radially to the outer periphery of the shower plate 8 opposite to the workpiece 1 via separators 6a-6c and gas dispersion plates 7a and 7b. This is a common method for obtaining a gas outflow area of ​​appropriate diameter during the processing of workpiece 1.

[0116] However, in this embodiment, the combustible gas flows out separately from the outer periphery of the shower plate 8 and the combustion-supporting gas flows out separately from the central side of the shower plate 8. In the case of an actual vacuum processing apparatus, the gas dispersion chamber 4 also has the same structure as shown in this schematic diagram: the process gas flowing out of the upper gas valves GCF1 and GCF2 does not mix with the other gas, so that the gas flow path is expanded to the back of the shower plate 8.

[0117] In a vacuum processing apparatus with such a structure, it is desirable to control the introduction of process gas into the internal space of chamber 3, where it is first mixed with process gases of other properties. For example, in the absence of flowing flammable gases, the combustion-supporting gas used may undergo back diffusion. Specifically, with gas valve GCF1 closed, the combustion-supporting gas diffuses to its reverse diaphragm side; with gas valve GCF1 open, it may further diffuse to the upstream flammable gas manifold. Furthermore, not only the combustion-supporting process gas, but also reaction products may intrude into the flammable gas pipeline through back diffusion.

[0118] Furthermore, if the supply of flammable gas is stopped and then restarted, gas mixing may occur in the gas dispersion chamber 4 and the gas supply pipeline. In this case, adverse conditions may result, such as corrosion caused by the intrusion of combustion-supporting gas, metal contamination caused by the introduction of reaction products, metal contamination caused by the new formation of reaction products, and the generation of foreign matter (particulate matter).

[0119] To address this issue, it is effective to ensure a continuous flow of purge gas from the flammable gas blocks even when no flammable gas is used. In this embodiment, the control of continuously flowing purge gas from the purge line installed at the upstream end of each block is taken as fundamental. When implementing this gas control, the gas control line of series A is started, and valve G1CA is always open to allow purge gas to flow into the manifold.

[0120] According to the steps set in the formula, the required process gas for the combustible gas, or its dilution gas, is mixed with the purging gas in the manifold of the combustible gas block. C-series gases are mixed with the purging gas supplied via valve G1CA upstream, E-series gases at valve G1CE, and F-series gases at valve G1CF. When the combustible gas is not flowing at all, only the purging gas flows, as described above. The same applies to the control of the combustion-supporting gas block on the lower side.

[0121] Next, in the same Figure 1 In the apparatus, control is considered for gas treatment processes involving cyclic gas switching, such as ALD, ALE, and furnace belly processes. In controlling these gas treatments, the internal volume of chamber 3, the surface area of ​​the workpiece 1, and the reaction rate of that workpiece 1 are considered, along with gas flow rate, gas flow time, number of switching cycles, and sequence. In numerous gas treatment processes, it is important to design the system to prevent extreme pressure changes in chamber 3.

[0122] In cases where the gas pressure changes drastically due to gas switching or other reasons, the overall gas flow remains unchanged, making it impossible to achieve reproducible performance for each process, or causing particles to adhere to the workpiece 1, which is therefore undesirable.

[0123] In this embodiment, when the gas is circulated and switched, the gas flows simultaneously to the purge gas pipeline and the process gas pipeline (one series or multiple series of gases) located at the upstream side, while the supply pipeline to the chamber and the exhaust pipeline for discarding gas flow separately.

[0124] Basically, after the gas flow begins, adjustments to the gas flow rate are minimized as much as possible, with both the purge gas and process gas flowing at controlled flow rates. While the purge gas flows towards the chamber side, the process gas flows downstream of the chamber via the exhaust line's manifold. Conversely, while the process gas flows towards the chamber side, the purge gas flows downstream of the chamber via the exhaust line's manifold.

[0125] According to this embodiment, by switching the opening and closing of only four (or six, eight) gas valves approximately simultaneously, the gas supply destination can be switched to a chamber or a position downstream of the chamber, thereby cyclically switching the gas supply to the workpiece 1. Similar to the aforementioned control method, the control ensures that there is no time when no gas flows in the chamber supply line. The same applies to the exhaust line, which is also controlled to ensure that there is no time when no gas flows.

[0126] The above describes a summary of this embodiment. A purging gas pipeline is installed at the upstream end of a block having manifolds capable of supplying gases of different properties, a chamber pipeline for supplying gas to a gas processing chamber, and an exhaust pipeline for allowing gas to flow out of the chamber. Furthermore, valves for supplying process gas are installed at each supply destination manifold where the purging gas flows from the upstream end.

[0127] The gas valve supplying the process gas can use a special three-way valve to allow the process gas to flow from the diaphragm side to the reverse diaphragm side. The peripheral portion of the diaphragm side of the special three-way valve is connected between all the valves used to supply the process gas, forming a manifold.

[0128] Similarly, regarding the process gas required for dilution, the diaphragm side of a three-way valve supplying the process gas from the diaphragm side to the reverse diaphragm side is connected to the reverse diaphragm side of a two-way valve upstream of the dilution gas supply. This establishes a basic dilution pipeline capable of initiating flow of the process gas without dead volume.

[0129] The following are examples of specific gas supply methods. Figure 5 This is a flowchart illustrating the gas treatment steps in the processing formula. During the transport of the wafer 1, which is the workpiece, the process can be performed under a vacuum with completely non-flowing gas, or it can be performed after the inactive gas has been removed from the processing chamber 3. In this embodiment, the case where gas removal continues during the transport of the wafer 1 (during loading and unloading) is described.

[0130] Furthermore, details of processing steps other than the gas switching process are not described, but different other processing steps can be inserted and performed before the pre-processing for the gas switching step S102, i.e., after the wafer is loaded in step S101. Similarly, the cyclical repetition of steps S103 to S106 ends after a predetermined number of iterations or after the etching endpoint is detected, and different other processing steps can also be inserted and performed before the gas purging step is performed again in step S101, i.e., after the completion of the post-processing step S107.

[0131] Furthermore, in this embodiment, the process of cyclically switching the gas is described as a series of implementations in the overall process, but there is no problem in implementing the process of switching the type of gas and cyclically switching the gas multiple times in the process of processing a wafer as a workpiece 1.

[0132] Figures 6-12This diagram illustrates the gas flow in each step S101 to S107 at the flammable gas block and the combustion-supporting gas block, indicated by arrows. Here, a gas treatment control scenario is shown where the gas is cyclically switched using A-series purge gas A (Ar), D-series dilution process gas (Ar), E-series process gas E (CH4), L-series purge gas L (Ar), and P-series process gas P (Cl2). Other scenarios are also included. Figures 6-12 The gas valves of the other series shown are closed.

[0133] first, Figure 5 The gas purging step in step S101 is set after the wafer, which is the workpiece 1, has been processed and is removed from the chamber 3. The valve opening and closing and the flow controller adjustment are as follows.

[0134] Series A: G1CA (Open), G1EA (Closed), G2A (Open), FCA (300ml / min), G3A (Open)

[0135] D series: G2D (closed), FCD (0ml / min), G3D (closed)

[0136] E series: G1CE (closed), G1EE (closed), G2E (closed), FCE (0ml / min), G3E (closed)

[0137] L Series: G1CL (Open), G1EL (Closed), G2L (Open), FCL (300ml / min), G3L (Open)

[0138] P series: G1CP (closed), G1EP (closed), G2P (closed), FCP (0ml / min), G3P (closed)

[0139] Chamber gas supply valves: GCF1, GCF2 (open)

[0140] Exhaust gas discard valves: GEF1, GEF2 (closed)

[0141] The pressure in chamber 3 is controlled at 100 Pa.

[0142] Through the above controls, such as Figure 6As shown, purge gases A (Ar) and L (Ar) are supplied to chamber 3 via the chamber supply line for purging, but process gases E (CH4) and P (Cl2) are not supplied. During this period, the wafer, which is the workpiece 1, is moved onto the stage 2 inside chamber 3. After being moved in, gate valve 15 is closed, isolating chamber 3 from the transport system (not shown). After this moving in operation is completed, the processing step is started, first continuing the gas purging step in step S101 for a few seconds.

[0143] Next, in Figure 5 In step S102, pre-processing is performed for the case of circulating gas switching. In this case, during the pre-processing in step S102, the valve opening and closing and the flow controller adjustment are as follows. However, the control pressure of the gas in chamber 3 is controlled at 200 Pa.

[0144] Series A: G1CA (Open), G1EA (Closed), G2A (Open), FCA (150ml / min), G3A (Open)

[0145] D series: G2D (open), FCD (120ml / min), G3D (open)

[0146] E series: G1CE (closed), G1EE (open), G2E (open), FCE (30ml / min), G3E (open)

[0147] L series: G1CL (open), G1EL (closed), G2L (open), FCL (150ml / min), G3L (open)

[0148] P series: G1CP (closed), G1EP (open), G2P (open), FCP (150ml / min), G3P (open)

[0149] Chamber gas supply valves: GCF1, GCF2 (open)

[0150] Exhaust gas discard valves: GEF1, GEF2 (open)

[0151] Through the above controls, such as Figure 7 As shown, purging gases A (Ar) and L (Ar) are supplied to chamber 3 via chamber lines to continue purging, while process gases E (CH4) and P (Cl2), diluted with diluting process gas D (Ar), are discharged as discard gases via exhaust lines to a location downstream of chamber 3. Within approximately 3 seconds of control, the flow controller, controlled by FC*, reaches a roughly stable flow rate. Gases that initially flowed uncontrollably are discarded into the exhaust system, thus offering no benefit to the processing of the wafer 1 being processed.

[0152] Next, in Figure 5 In step S103, the first process gas supply 1 is performed. In this case, the valve opening and closing and the flow controller adjustment are as follows. However, the control pressure of the gas in chamber 3 is 200 Pa, and the step time is 2.0 seconds.

[0153] Series A: G1CA (Open), G1EA (Closed), G2A (Open), FCA (150ml / min), G3A (Open)

[0154] D series: G2D (open), FCD (120ml / min), G3D (open)

[0155] E series: G1CE (closed), G1EE (open), G2E (open), FCE (30ml / min), G3E (open)

[0156] L series: G1CL (closed), G1EL (open), G2L (open), FCL (150ml / min), G3L (open)

[0157] P series: G1CP (open), G1EP (closed), G2P (open), FCP (150ml / min), G3P (open)

[0158] Chamber gas supply valves: GCF1, GCF2 (open)

[0159] Exhaust gas discard valves: GEF1, GEF2 (open)

[0160] Through the above controls, such as Figure 8 As shown, the combustible block side remains in the state of step S102, but on the combustion-supporting block side, process gas P (Cl2) is supplied to chamber 3 via the chamber supply line for gas treatment, and purging gas L (Ar) is used to purge the exhaust line.

[0161] Next, in Figure 5 In step S104, the first purging 1 is performed. In this case, the valve opening and closing and the flow controller adjustment are as follows. However, the gas control pressure is 200 Pa, and the step time is 2.7 seconds.

[0162] Series A: G1CA (Open), G1EA (Closed), G2A (Open), FCA (150ml / min), G3A (Open)

[0163] D series: G2D (open), FCD (120ml / min), G3D (open)

[0164] E series: G1CE (closed), G1EE (open), G2E (open), FCE (30ml / min), G3E (open)

[0165] L series: G1CL (open), G1EL (closed), G2L (open), FCL (150ml / min), G3L (open)

[0166] P series: G1CP (closed), G1EP (open), G2P (open), FCP (150ml / min), G3P (open)

[0167] Chamber gas supply valves: GCF1, GCF2 (open)

[0168] Exhaust gas discard valves: GEF1, GEF2 (open)

[0169] Through the above controls, such as Figure 9 As shown, the process returns to the same state as in step S102. On the combustion-supporting block side, the purge gas L (Ar) removes the process gas P (Cl2) remaining in the chamber supply line from the piping. The residual gas in chamber 3 is also removed.

[0170] Next, in Figure 5 In step S105, a second gas supply 2 is performed. In this case, the valve opening and closing and the flow controller adjustment are as follows. However, the gas control pressure is 200 Pa, and the step time is 0.5 seconds.

[0171] Series A: G1CA (Closed), G1EA (Open), G2A (Open), FCA (150ml / min), G3A (Open)

[0172] D series: G2D (open), FCD (120ml / min), G3D (open)

[0173] E series: G1CE (open), G1EE (closed), G2E (open), FCE (30ml / min), G3E (open)

[0174] L series: G1CL (open), G1EL (closed), G2L (open), FCL (150ml / min), G3L (open)

[0175] P series: G1CP (closed), G1EP (open), G2P (open), FCP (150ml / min), G3P (open)

[0176] Chamber gas supply valves: GCF1, GCF2 (open)

[0177] Exhaust gas discard valves: GEF1, GEF2 (open)

[0178] Through the above controls, such as Figure 10 As shown, process gas E (CH4), diluted by dilution process gas D (Ar), is supplied to chamber 3 via the chamber supply line for gas treatment (surface adhesion), and purging gas A (Ar) purifies the exhaust line to prevent backflow from the exhaust system. The combustion-supporting block side remains in the state of step S104.

[0179] Next, in Figure 5 In step S106, a second purging process is performed. In this case, the valve opening and closing and the flow controller adjustment are as follows. However, the gas control pressure is 200 Pa, and the step time is 9.8 seconds.

[0180] Series A: G1CA (Open), G1EA (Closed), G2A (Open), FCA (150ml / min), G3A (Open)

[0181] D series: G2D (open), FCD (120ml / min), G3D (open)

[0182] E series: G1CE (closed), G1EE (open), G2E (open), FCE (30ml / min), G3E (open)

[0183] L series: G1CL (open), G1EL (closed), G2L (open), FCL (150ml / min), G3L (open)

[0184] P series: G1CP (closed), G1EP (open), G2P (open), FCP (150ml / min), G3P (open)

[0185] Chamber gas supply valves: GCF1, GCF2 (open)

[0186] Exhaust gas discard valves: GEF1, GEF2 (open)

[0187] Through the above controls, such as Figure 11 As shown, the process is controlled in the same way as in step S104. During this period, the halogen lamp 10 is run for a certain period of time (about 5 seconds) to heat the wafer, which is the workpiece 1, thereby promoting the reaction and generating and dispersing highly volatile reaction products, thus advancing the etching process.

[0188] In this way, the reaction is controlled by adjusting the gas supply, and steps S103 to S106 are repeated sequentially until the desired etching amount is achieved. The time required for one cycle in this embodiment is approximately 15 seconds.

[0189] Next, after the etching based on the circulating gas supply is completed, in Figure 5In step S107, post-processing is performed. In this case, the valve opening and closing and the flow controller adjustment are as follows. However, the gas control pressure is 200 Pa.

[0190] Series A: G1CA (open), G1EA (open), G2A (open), FCA (300ml / min), G3A (open)

[0191] D series: G2D (closed), FCD (0ml / min), G3D (closed)

[0192] E series: G1CE (closed), G1EE (closed), G2E (closed), FCE (0ml / min), G3E (closed)

[0193] L series: G1CL (open), G1EL (open), G2L (open), FCL (300ml / min), G3L (open)

[0194] P series: G1CP (closed), G1EP (closed), G2P (closed), FCP (0ml / min), G3P (closed)

[0195] Chamber gas supply valves: GCF1, GCF2 (open)

[0196] Exhaust gas discard valves: GEF1, GEF2 (closed)

[0197] Through the above controls, such as Figure 12 As shown, purge gases A (Ar) and L (Ar) are supplied to chamber 3 via chamber lines for purging, and process gases E (CH4) and P (Cl2) remaining in the exhaust lines are also removed. During this process, temperature adjustment of the wafer, which is the workpiece 1, can also be performed.

[0198] After all processing of the wafer 1 (the workpiece) is completed, the control of the gas flow rate for removal in step S101 is implemented. This state is consistent with... Figure 6 As has already been stated.

[0199] [Implementation Method 2]

[0200] use Figure 13 Other implementation methods will be described. This implementation method is different from... Figure 1 The difference between the embodiments shown lies in the valve configuration. Specifically, in valves G1EC', G1EE', G1EF', G1EN', G1EP', and G1EQ', which are special three-way valves used to flow process gas into the exhaust line, the anti-diaphragm side is connected to the manifold of the exhaust line.

[0201] In these valves, process gas is directed to the diaphragm side, from where it is discharged to the reverse diaphragm side of the G1C* valve. When these valves are actuated to open, process gas is directed to the reverse diaphragm side and merges into a manifold for the discard gas exhaust line formed by the base 35. Therefore, in the manifold as shown in the schematic diagram... Figure 13 As explicitly stated, there exists a dead space formed by the control pipe. In cases where the dead space in the manifold piping can accommodate the discarding of gas, it can also be defined as such. Figure 13 The structure.

[0202] Explanation of reference numerals in the attached figures

[0203] 1: Workpiece

[0204] 2: Workbench

[0205] 3: Chamber

[0206] 4: Gas dispersion chamber

[0207] 5: Top Slab

[0208] 6a, 6b, 6c: Separators

[0209] 7a, 7b: Gas dispersion plates

[0210] 8: Shower board

[0211] 9a, 9b: Nozzles

[0212] 10: Halogen lamp

[0213] 11: Through the window

[0214] 15: Gate valve

[0215] 16: Gate valve drive shaft

[0216] 20a, 20b: Exhaust ports

[0217] 20: Exhaust piping

[0218] 21: Pressure regulating valve

[0219] 22: Main valve

[0220] 25: Dry pump

[0221] 26: Connecting Piping

[0222] 27: Exhaust piping

[0223] 28: Pressure gauge (for chamber piping)

[0224] 29: Pressure gauge (for exhaust pipe)

[0225] 30: Gas Box

[0226] 35: Base

[0227] 38: Pressure gauge (flammable / chamber piping manifold)

[0228] 39: Pressure gauge (flammable / exhaust line manifold)

[0229] 48: Pressure gauge (combustion-supporting / chamber piping manifold)

[0230] 49: Pressure gauge (combustion-supporting / exhaust line manifold)

[0231] 42: Empty port

[0232] 43: Empty port.

Claims

1. A gas supply device for supplying gas to a processing chamber for processing samples, characterized in that, The gas supply device includes: The port is connected to a gas source containing various gases, including purging gas and processing gas; and A manifold piping system is provided for the various gases supplied from the port to converge and flow. A gas flow path for supplying gas from a port connected to a gas source for the purging gas is formed at the upstream side of the manifold. The upstream gas valve for the purging gas is configured such that the purging gas, which is controlled by the opening action of the diaphragm, flows out from the diaphragm side to the reverse diaphragm side, and the contact gas portion when the processing gas flows out into the manifold is only the central pressing portion of the diaphragm. As the upstream terminal of the manifold, it does not have a dead volume.

2. The gas supply device according to claim 1, characterized in that, A three-way valve that opens and closes via a diaphragm is disposed on the manifold. The three-way valve forms the manifold itself with a gas flow path on the diaphragm side that allows gas to pass through without obstructing gas flow. The gas supply device is configured to cause the processing gas flowing out through the opening action of the diaphragm of the three-way valve to converge into the manifold.

3. A gas supply device for supplying gas to a processing chamber for processing samples, characterized in that, The gas supply device includes: The port is connected to a gas source containing various gases, including purging gas and processing gas; and A manifold piping system is provided for the various gases supplied from the port to converge and flow. A gas flow path for supplying gas from a port connected to a gas source for the purging gas is formed at the upstream side of the manifold. The gas supply device independently includes a three-way valve that is opened and closed via a diaphragm, a flow controller for the processing gas, and a flow controller for the dilution gas used to dilute the processing gas. A gas flow path is formed on the diaphragm side of the three-way valve, allowing dilution gas to pass through without obstructing gas flow. The gas supply device is configured to allow processing gas to flow out and merge into the gas flow path through which the dilution gas passes by opening the diaphragm of the three-way valve, thereby controlling the flow rate of the processing gas. The gas valve downstream of the flow controller that allows the diluent gas to flow out is configured to allow the diluent gas with controlled flow to flow out from the diaphragm side to the reverse diaphragm side, such that the contact gas portion of the processing gas that merges into the gas flow path is only the central pressing portion of the diaphragm, and as the upstream terminal of the gas flow path, it does not have a dead volume.

4. The gas supply device according to claim 1 or 3, characterized in that, The manifold piping is independently provided with: a first gas pipeline that supplies the purging gas and the processing gas to the processing chamber; and a second gas pipeline that discharges the purging gas and the processing gas.

5. The gas supply device according to claim 1 or 3, characterized in that, Gas supply blocks are formed according to the types of gases that cannot be mixed in the common manifold and the common supply pipe for the gas supply, and the manifold is arranged according to each gas supply block.

6. A vacuum processing apparatus, characterized in that, The vacuum processing apparatus comprises: a gas supply device as described in claim 1 or 3; and a processing chamber supplied with gas from the gas supply device.

7. A gas supply method using the gas supply device of claim 5, characterized in that, In the process of processing the sample, purging gas is always flowing upstream of the manifold supplying the gas from all the gas supply blocks to the processing chamber. According to the progress of each processing step, the type of gas used is selected by opening and closing the valves of each gas supply forming the manifold, and the processing is carried out, so that gas is always flowing in the supply pipes of any gas supply block toward the processing chamber.

8. A gas supply method using the gas supply device of claim 5, characterized in that, When gas is intermittently supplied to the processing chamber in the gas supply block, the gas flow rate is always controlled by a flow controller for the purging gas and the type of gas used. At the same time, the intermittent gas supply to the processing chamber is achieved by alternately opening and closing valves provided in the manifold connected to the supply pipe leading to the processing chamber, or valves provided in the manifold connected to the exhaust system for discarding gas. The purging gas is also directed from the valve for the purging gas located at the uppermost end of the manifold to a supply pipe side different from the gas supply pipe, thereby ensuring that gas is always flowing in both manifolds and both supply pipes.

9. The gas supply method according to claim 8, characterized in that, There are two or more gas supply blocks that intermittently supply the processing gas, and the simultaneous opening and closing of the gas supply valves forming the manifold is prohibited, so that the processing gas supplied from each of the gas supply blocks is not simultaneously supplied to the processing chamber or the exhaust system.

10. A gas supply method using the gas supply device according to claim 1 or 3, characterized in that, While supplying the purifying gas from the upstream end of the manifold, the processing gas is allowed to flow out to the middle of the manifold.

11. A gas supply method using the gas supply device according to claim 1 or 3, characterized in that, The gas supply method includes the following steps: after the sample is processed, the supply of the processing gas is stopped, and the purging gas flows simultaneously to the supply piping and exhaust system that supply the processing chamber.

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