Superconducting flux storage structure, data read / write characterization method and memory
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-07-13
- Publication Date
- 2026-04-03
AI Technical Summary
Existing technologies make it difficult to perform high-speed (picosecond-level) signal sampling on superconducting storage devices at room temperature, and testing equipment is unable to effectively characterize the high-speed data read and write performance of superconducting storage devices.
A superconducting flux storage structure is adopted, including a flux storage module and a flux readout module. By using first and second superconducting loops and coils, the writing and reading of flux quanta are realized by adjusting the current, enabling operation, and combined with a superconducting quantum interference device for signal reading and writing characterization.
It enables high-speed data writing and reading of superconducting memory devices at room temperature, lowers the threshold for testing equipment, enables picosecond-speed signal sampling, and improves the performance of superconducting memory.
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Figure CN115223610B_ABST