Semiconductor device and method of manufacturing the same
By employing a layout design that connects the transmission circuit and the phase shift circuit using gate conductors in semiconductor devices, the horizontal clock path is reduced, the interference problem between adjacent clock paths is solved, and power consumption is reduced.
CN115224047BActive Publication Date: 2026-07-21TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
- Filing Date
- 2022-05-13
- Publication Date
- 2026-07-21
Smart Images
Figure CN115224047B_ABST
Abstract
A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a first conductive pattern disposed in a first row and extending along a first direction from a plan view perspective, a first phase shift circuit disposed in the first row, a first transmission circuit disposed in a second row from the plan view perspective, and a first gate conductor extending from the first row to the second row along a second direction perpendicular to the first direction. The first phase shift circuit and the first transmission circuit are electrically connected with the first conductive pattern through the first gate conductor.
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