Light emitting device and display device including the same

Abstract

Provided are a light emitting device and a display device including the light emitting device. The display device includes: a first electrode including a first electrode line and a second electrode line; a light emitting device disposed between the first electrode line and the second electrode line; a first contact electrode including a first pattern disposed to overlap with the first electrode line and one end of the light emitting device and a second pattern disposed to overlap with the second electrode line and the other end of the light emitting device; a second electrode disposed on the light emitting device and overlapping with the first electrode and the light emitting device; and a second contact electrode disposed between the light emitting device and the second electrode, wherein the light emitting device includes a plurality of semiconductor layers and an insulating film partially surrounding the outer surfaces of the plurality of semiconductor layers, and the light emitting device includes a main body portion, and a light emitting portion disposed on the main body portion and having a length shorter than the main body portion.

Description

Technical Field

[0001] The present disclosure relates to a light emitting device and a display apparatus including the same. Background Art

[0002] As multimedia technology develops, the importance of display devices has been increasing. In response to this, various types of display devices, such as organic light emitting displays, liquid crystal displays (LCDs), and the like, have been used.

[0003] The display device is a device for displaying an image, and includes a display panel, such as an organic light-emitting display panel or a liquid crystal display panel. The light-emitting display panel may include a light-emitting element, such as a light-emitting diode (LED), and examples of the light-emitting diode include an organic light-emitting diode (OLED) using an organic material as a fluorescent material and an inorganic light-emitting diode using an inorganic material as a fluorescent material. Summary of the invention

[0004] [Technical issues]

[0005] In order to solve the above problems, an embodiment of the present disclosure provides a light emitting device including a light emitting part, a body part having a different width from the light emitting part, and an active layer having a relatively large area.

[0006] Embodiments of the present disclosure also provide a display device including the light emitting device.

[0007] It should be noted that aspects of the present disclosure are not limited thereto, and other aspects not mentioned herein will be apparent to those of ordinary skill in the art from the following description.

[0008] [Technical solution]

[0009] According to an embodiment of the present disclosure, a display device includes: a first electrode, including a first electrode line extending in a first direction, and a second electrode line extending in the first direction and spaced apart from the first electrode line in a second direction; a light-emitting device, arranged between the first electrode line and the second electrode line; a first contact electrode, extending in the first direction and including a first pattern and a second pattern, the first pattern being arranged to overlap with one end portion of each of the first electrode line and the light-emitting device, and the second pattern being arranged to overlap with the other end portion of each of the second electrode line and the light-emitting device; a second electrode, arranged on the light-emitting device to at least partially overlap with the first electrode and the light-emitting device; and a second contact electrode, extending in the first direction and arranged between the light-emitting device and the second electrode, wherein the light-emitting devices are light-emitting devices each including a plurality of semiconductor layers and an insulating film surrounding a portion of an outer surface of the plurality of semiconductor layers, and the light-emitting device includes a main body portion extending in the second direction, and a light-emitting portion arranged on the main body portion and having a length smaller than that of the main body portion in the second direction.

[0010] The light emitting device may include a first light emitting device, a light emitting portion of the first light emitting device being disposed to face the second electrode, and a light emitting portion of the second light emitting device being disposed to face the first direction.

[0011] Each of the main body portions of the light emitting device may include a first end portion and a second end portion in a second direction, a first pattern of a first contact electrode may be arranged to overlap with a first electrode line and the first end portion, and a second pattern of the first contact electrode may be arranged to overlap with a second electrode line and the second end portion.

[0012] A distance between the first electrode line and the second electrode line may be smaller than a length of the body portion in the second direction, and a length of the body portion in the second direction may be greater than a distance between the first pattern and the second pattern in the second direction.

[0013] The first pattern may be disposed to surround at least a portion of the first end portion without contacting the light emitting portion of the light emitting device, and the second pattern may be disposed to surround at least a portion of the second end portion without contacting the light emitting portion of the light emitting device.

[0014] The second contact electrode may make contact with the light emitting portion of the light emitting device and the second electrode.

[0015] The widths of the first electrode lines and the second electrode lines may be smaller than the width of the second electrode.

[0016] According to an embodiment of the present disclosure, a display device includes: a substrate; a first electrode, which is arranged on the substrate and includes a first electrode line and a second electrode line arranged to be spaced apart from each other; a light-emitting device, which is arranged between the first electrode line and the second electrode line; a first contact electrode, which includes a first pattern and a second pattern, the first pattern is arranged on at least a portion of the first electrode line and the light-emitting device, and the second pattern is arranged on another at least portion of the second electrode line and the light-emitting device; a second contact electrode, which is arranged on the light-emitting device between the first pattern and the second pattern; and a second electrode, which is arranged on the second contact electrode, wherein the light-emitting device includes a main body portion extending in one direction and a light-emitting portion having a length smaller than that of the main body portion in one direction, the first pattern of the first contact electrode is arranged on a first end portion of the main body portion, the second pattern of the first contact electrode is arranged on a second end portion of the main body portion, and the second contact electrode is arranged on the light-emitting portion.

[0017] The first pattern of the first contact electrode may contact the top surface and the side of the first end portion of the light emitting device, and the second pattern of the first contact electrode may contact the top surface and the side of the second end portion of the light emitting device.

[0018] The second contact electrode may make contact with a top surface and a side of the light emitting portion.

[0019] The second contact electrode may make contact with some portions directly connected to the light emitting portion.

[0020] Each of the light-emitting devices may include a plurality of semiconductor layers and an insulating film surrounding a portion of the outer surface of the plurality of semiconductor layers, and the insulating film may be arranged to surround a main body portion and a side portion of the light-emitting portion, but not arranged on a portion of the main body portion on the side portion and a top surface, on which the light-emitting portion is not arranged.

[0021] The light emitting device may include a first light emitting device whose light emitting portion is disposed to face an upward direction of the substrate and a second light emitting device whose light emitting portion is disposed to face a direction parallel to a top surface of the substrate.

[0022] In the first end portion of the light-emitting device, the top surfaces and side portions of the multiple semiconductor layers of each of the light-emitting devices in which the insulating film is not provided may be exposed, and the surface of the first light-emitting device in contact with the first pattern and the top surface of the first end portion may be parallel to the top surface of the substrate.

[0023] A surface of the second light emitting device contacting the first pattern and a top surface of the first end portion may be perpendicular to a top surface of the substrate.

[0024] According to an embodiment of the present disclosure, a light-emitting device includes: a plurality of semiconductor layers; and an insulating film, surrounding a portion of an outer surface of the plurality of semiconductor layers; wherein the plurality of semiconductor layers include a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, the light-emitting device includes a main body portion extending in one direction, and a light-emitting portion disposed on the main body portion and having a smaller length than the main body portion in one direction, and the active layer is disposed in the light-emitting portion.

[0025] The light emitting device may further include: a sub-semiconductor layer disposed under the first semiconductor layer; and an electrode layer disposed on the second semiconductor layer.

[0026] The first semiconductor layer may include a first portion disposed in the body portion and a second portion protruding from a portion of a top surface of the first portion, and the active layer may be disposed on the second portion of the first semiconductor layer.

[0027] A width of the body portion may be the same as a width of the light emitting portion, and a sum of heights of the body portion and the light emitting portion may be smaller than a length of the body portion in one direction.

[0028] The insulating film may be provided on both surfaces of the body portion in a width direction to surround the side of the light emitting portion, and the insulating film is not provided on a portion of the top surface of the body portion on which the light emitting portion is not provided.

[0029] Details of other implementations are included in the detailed description and accompanying drawings.

[0030] [Beneficial Effects]

[0031] According to an embodiment of the present disclosure, a light emitting device may include a main body portion and a light emitting portion having a different length from the main body portion, and the light emitting portion may protrude from the main body portion extending in one direction. The length of the main body portion in one direction may be greater than the height of the light emitting device, and as the length of the active layer disposed in the light emitting portion increases, the active layer may have a relatively large area. The larger the area of ​​the active layer, the higher the emission efficiency of the light emitting device.

[0032] A display device including a light emitting device may include a first electrode connected to a main portion of the light emitting device and a second electrode connected to a light emitting portion of the light emitting device. The display device may include different types of light emitting devices that are different from each other in terms of directions faced by the light emitting portions of the light emitting devices, and light generated by active layers of the light emitting devices may be emitted in different directions.

[0033] The effects according to the embodiments are not limited to the above-exemplified contents, and more various effects are included in the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 is a plan view of a display device according to an embodiment of the present disclosure.

[0035] Figure 2 is a plan view of a pixel of a display device according to an embodiment of the present disclosure.

[0036] Figure 3 It is along Figure 2 A cross-sectional view taken along line III-III'.

[0037] Figure 4 is a partial cross-sectional view of a display device according to another embodiment of the present disclosure.

[0038] Figure 5 is a perspective view of a light emitting device according to an embodiment of the present disclosure.

[0039] Figure 6 yes Figure 5 A cross-sectional view of a light emitting device.

[0040] Figure 7 is a schematic diagram showing a layout of a light emitting device on a wafer substrate according to an embodiment of the present disclosure.

[0041] Figure 8 is a perspective view illustrating an alignment direction of a light emitting device according to an embodiment of the present disclosure.

[0042] Fig. 9 It is along Figure 2 A cross-sectional view taken along line VIII-VIII'.

[0043] Fig.10 It is along Figure 2 A cross-sectional view taken along line IX-IX'.

[0044] Fig.11 It is along Figure 2 A cross-sectional view taken along line XX'.

[0045] Fig.12 is a cross-sectional view of a light emitting device according to an embodiment of the present disclosure.

[0046] Fig.13 Yes Fig.12 A cross-sectional view of a display device of a light-emitting device.

[0047] Fig.14 is a plan view of a sub-pixel of a display device according to another embodiment of the present disclosure.

[0048] Fig.15 It is along Fig.14A cross-sectional view taken along line Q1-Q1'.

[0049] Fig.16 is a plan view of a sub-pixel of a display device according to another embodiment of the present disclosure.

[0050] Fig.17 It is along Fig.16 A cross-sectional view taken along line Q2-Q2'.

[0051] Fig.18 is a plan view of a sub-pixel of a display device according to another embodiment of the present disclosure.

[0052] Fig.19 It is along Fig.18 A cross-sectional view taken along line Q3-Q3'. DETAILED DESCRIPTION

[0053] The present invention will now be described more fully below with reference to the accompanying drawings, in which preferred embodiments of the present invention are shown. However, the present invention may be implemented in different forms and should not be construed as being limited to the embodiments set forth herein. On the contrary, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the scope of the present invention to those skilled in the art.

[0054] It will also be understood that when a layer is referred to as being “on” another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present. Like reference numerals refer to like components throughout the specification.

[0055] It will be understood that although the terms "first", "second", etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. For example, without departing from the teachings of the present invention, the first element discussed below may be referred to as the second element. Similarly, the second element may also be referred to as the first element.

[0056] Hereinafter, embodiments will be described with reference to the accompanying drawings.

[0057] Figure 1 is a plan view of a display device according to an embodiment of the present disclosure.

[0058] refer to Figure 1, the display device 10 displays a moving image or a still image. The display device 10 may represent almost all types of electronic devices that provide a display screen. Examples of the display device 10 may include a television (TV), a notebook computer, a monitor, a billboard, an Internet of Things (IoT) device, a mobile phone, a smart phone, a tablet personal computer (PC), an electronic watch, a smart watch, a watch phone, a head mounted display (HMD), a mobile communication terminal, an electronic notepad, an electronic book (e-book), a portable multimedia player (PMP), a navigation device, a game console, a digital camera, a camcorder, etc.

[0059] The display device 10 includes a display panel that provides a display screen. Examples of the display panel of the display device 10 include an inorganic light emitting diode (ILED) display panel, an organic light emitting diode (OLED) display panel, a quantum dot light emitting diode (QLED) display panel, a plasma display panel (PDP), a field emission display (FED) panel, etc. Hereinafter, the display panel of the display device 10 will be described as, for example, an ILED display panel, but the present disclosure is not limited thereto. That is, various other display panels may also be applied to the display panel of the display device 10.

[0060] The shape of the display device 10 may vary. For example, the display device 10 may have a rectangular shape extending longer in the horizontal direction than in the vertical direction, a rectangular shape extending longer in the vertical direction than in the horizontal direction, a square shape, a quadrilateral shape with rounded corners, a non-quadrilateral polygonal shape, or a circular shape. The shape of the display area DPA of the display device 10 may be similar to the shape of the display device 10. Figure 1 It is shown that both the display device 10 and the display area DPA have a rectangular shape extending relatively long in the horizontal direction.

[0061] The display device 10 may include a display area DPA and a non-display area NDA. The display area DPA may be an area in which an image is displayed, and the non-display area NDA may be an area in which an image is not displayed. The display area DPA may also be referred to as an active area, and the non-display area NDA may also be referred to as a non-active area. The display area DPA may occupy a central portion of the display device 10.

[0062] The display area DPA may include a plurality of pixels PX. The pixels PX may be arranged in row and column directions. In a plan view, each of the pixels PX may have a rectangular shape or a square shape, but the present disclosure is not limited thereto. Optionally, each of the pixels PX may have a rhombus shape having sides inclined relative to a specific direction. The pixels PX may be alternately arranged in a stripe manner or a PenTile manner. Each of the pixels PX may include one or more light emitting devices 300 (see Figure 2), which emits light in a specific wavelength range.

[0063] The non-display area NDA may be disposed around the display area DPA. The non-display area NDA may surround the entire display area DPA or a portion of the display area DPA. The display area DPA may have a rectangular shape, and the non-display area NDA may be disposed adjacent to four sides of the display area DPA. The non-display area NDA may form a frame of the display device 10. A line or circuit driver included in the display device 10 may be disposed in the non-display area NDA, or an external device may be installed in the non-display area NDA.

[0064] Figure 2 is a plan view of a pixel of a display device according to an embodiment of the present disclosure. Figure 3 It is along Figure 2 A cross-sectional view taken along line III-III'.

[0065] refer to Figure 2 , the pixel PX may include a first sub-pixel PX1, a second sub-pixel PX2, and a third sub-pixel PX3. The first sub-pixel PX1 may emit a first color light, the second sub-pixel PX2 may emit a second color light, and the third sub-pixel PX3 may emit a third color light. The first color light, the second color light, and the third color light may be blue light, green light, and red light, respectively, but the present disclosure is not limited thereto. Alternatively, the sub-pixels PXn (e.g., the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3) may all emit light of the same color. Figure 2 It is shown that the pixel PX may include three sub-pixels PXn, but the present disclosure is not limited thereto. Alternatively, the pixel PX may include more than three sub-pixels PXn.

[0066] The subpixel PXn may include an area defined as an emission area EMA. The first subpixel PX1 may include a first emission area EMA1, the second subpixel PX2 may include a second emission area EMA2, and the third subpixel PX3 may include a third emission area EMA3. Each of the emission areas EMA may be defined as an area in which a light emitting device 300 is disposed to emit light of a specific wavelength band. The light emitting device 300 may include an active layer, and the active layer may emit light of a specific wavelength band without any directionality. Light emitted by the active layer of the light emitting device 300 may be emitted through both sides of each of the light emitting devices 300. Each of the emission areas EMA includes an area in which the light emitting device 300 is disposed, and may also include an area around the light emitting device 300 that outputs light emitted by the light emitting device 300.

[0067] However, the present disclosure is not limited thereto. Each of the emission areas EMA may include an area that outputs light emitted by the light emitting device 300 and then reflected or refracted from other elements. The light emitting device 300 may be disposed in each of the sub-pixels PXn, and the area in which the light emitting device 300 is disposed and the surrounding area of ​​the light emitting device 300 may form the emission area EMA.

[0068] Although not specifically shown, each of the sub-pixels PXn of the display device 10 may include a non-emission region, which is defined as a region other than the emission region EMA. The non-emission region may be a region in which the light emitting device 300 is not disposed, and since the light emitted by the light emitting device 300 does not reach, light may not be output.

[0069] Figure 3 Shows Figure 2 However, it can also be directly applied to other pixels PX or other sub-pixels PXn. Figure 3 Shows from Figure 2 FIG. 5 is a cross-sectional view from one end portion to the other end portion of the light emitting device 300 in the first sub-pixel PX1.

[0070] refer to Figure 3 And further reference Figure 2 , the display device 10 may include a circuit element layer and a display element layer disposed on a first substrate 101. A semiconductor layer, a plurality of conductive layers, and a plurality of insulating layers may be disposed on the first substrate 101, and may form a circuit element layer and a display element layer. The conductive layer may include a first gate conductive layer, a second gate conductive layer, a first data conductive layer, and a second data conductive layer disposed under the first planarization layer 109 and forming a circuit element layer, and electrodes 210 and 220 and contact electrodes 261 and 262 disposed on the first planarization layer 109 and forming a display element layer. The insulating layer may include a buffer layer 102, a first gate insulating layer 103, a first passivation layer 105, a first interlayer insulating layer 107, a second interlayer insulating layer 108, a first planarization layer 109, a first insulating layer 510, and an encapsulation layer 550.

[0071] The circuit element layer including circuit elements and multiple lines for driving the light emitting device 300 may include a driving transistor DT, a switching transistor ST, a first conductive pattern CDP, and multiple voltage lines VL1 and VL2, and the display element layer may include the light emitting device 300, a first electrode 210, a second electrode 220, a first contact electrode 261, and a second contact electrode 262.

[0072] The first substrate 101 may be an insulating substrate. The first substrate 101 may be formed of an insulating material such as glass, quartz, or polymer resin. The first substrate 101 may be a rigid substrate, or may be a flexible substrate that is bendable, foldable, or rollable.

[0073] The light blocking layers BML1 and BML2 may be disposed on the first substrate 101. The light blocking layers BML1 and BML2 may include a first light blocking layer BML1 and a second light blocking layer BML2. The first light blocking layer BML1 and the second light blocking layer BML2 may be disposed to overlap at least the first active material layer DT_ACT of the driving transistor DT and the second active material layer ST_ACT of the switching transistor ST, respectively. The light blocking layers BML1 and BML2 may include a material capable of blocking light, and may prevent light from being incident on the first active material layer DT_ACT and the second active material layer ST_ACT. For example, the first light blocking layer BML1 and the second light blocking layer BML2 may be formed of an opaque metal material capable of blocking transmission of light. However, the present disclosure is not limited thereto, and optionally, the light blocking layers BML1 and BML2 may not be disposed. Although not specifically shown, the first light blocking layer BML1 may be electrically connected to the first source / drain electrode DT_SD1 of the driving transistor DT, and the second light blocking layer BML2 may be electrically connected to the first source / drain electrode ST_SD1 of the switching transistor ST.

[0074] The buffer layer 102 may include light blocking layers BML1 and BML2, and may be disposed on the entire surface of the first substrate 101. The buffer layer 102 may be formed on the first substrate 101 to protect the driving transistor DT and the switching transistor ST from moisture that may penetrate the first substrate 101 (which is susceptible to moisture), and may perform a surface planarization function. The buffer layer 102 may include a plurality of inorganic layers alternately stacked. For example, the buffer layer 102 may be formed to include silicon oxide (SiO x ), silicon nitride (SiN x ) and silicon oxynitride (SiON) are alternately stacked in a multilayer.

[0075] The semiconductor layer is disposed on the buffer layer 102. The semiconductor layer may include a first active material layer DT_ACT of the driving transistor DT and a second active material layer ST_ACT of the switching transistor ST. The first active material layer DT_ACT of the driving transistor DT and the second active material layer ST_ACT of the switching transistor ST may be disposed to partially overlap the gate electrodes DT_G and ST_G of the first gate conductive layer.

[0076] In one embodiment, the semiconductor layer may include polycrystalline silicon, single crystal silicon, or an oxide semiconductor. Here, polycrystalline silicon may be formed by crystallizing amorphous silicon by, for example, rapid thermal annealing (RTA), solid phase crystallization (SPC), excimer laser annealing (ELA), metal induced crystallization (MILC), or sequential lateral solidification (SLS), but the present disclosure is not limited thereto. In the case where the semiconductor layer includes polycrystalline silicon, the first active material layer DT_ACT may include a first doping region DT_ACTa, a second doping region DT_ACTb, and a first channel region DT_ACTc. The first channel region DT_ACTc may be disposed between the first doping region DT_ACTa and the second doping region DT_ACTb. The second active material layer ST_ACT may include a third doping region ST_ACTa, a fourth doping region ST_ACTb, and a second channel region ST_ACTc. The second channel region ST_ACTc may be disposed between the third doping region ST_ACTa and the fourth doping region ST_ACTb. The first doping region DT_ACTa, the second doping region DT_ACTb, the third doping region ST_ACTa, and the fourth doping region ST_ACTb may be portions of the first active material layer DT_ACT or the second active material layer ST_ACT doped with impurities.

[0077] In one embodiment, the first active material layer DT_ACT and the second active material layer ST_ACT may include an oxide semiconductor. In this case, the doped region of each of the first active material layer DT_ACT and the second active material layer ST_ACT may be a conductor region. The oxide semiconductor may be an oxide semiconductor containing indium (In). In some embodiments, the oxide semiconductor may be indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium oxide (IGO), indium zinc tin oxide (IZTO), indium gallium tin oxide (IGTO), or indium gallium zinc tin oxide (IGZTO), but the present disclosure is not limited thereto.

[0078] The first gate insulating layer 103 is disposed on the semiconductor layer and the buffer layer 102. The first gate insulating layer 103 may be disposed on the buffer layer 102 on which the semiconductor layer is disposed. The first gate insulating layer 103 may be used as a gate insulating film for the driving transistor DT and the switching transistor ST. The first gate insulating layer 103 may be formed to include an inorganic material (such as SiO x 、SiN x or SiON as an example), or is formed as a stack of such inorganic materials.

[0079] The first gate conductive layer is disposed on the first gate insulating layer 103. The first gate conductive layer may include a first gate electrode DT_G of the driving transistor DT and a second gate electrode ST_G of the switching transistor ST. The first gate electrode DT_G may be disposed to overlap at least a portion of the first active material layer DT_ACT, and the second gate electrode ST_G may be disposed to overlap at least a portion of the second active material layer ST_ACT. For example, the first gate electrode DT_G may be disposed to overlap a first channel region DT_ACTc of the first active material layer DT_ACT in a thickness direction, and the second gate electrode ST_G may be disposed to overlap a second channel region ST_ACTc of the second active material layer ST_ACT in a thickness direction.

[0080] The first gate conductive layer may be formed as a single layer or a multilayer including one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu) and alloys thereof, but the present disclosure is not limited thereto.

[0081] The first passivation layer 105 is disposed on the first gate conductive layer. The first passivation layer 105 may be disposed to cover and protect the first gate conductive layer. The first passivation layer 105 may be formed to include an inorganic material (such as SiO x 、SiN x or SiON as an example), or is formed as a stack of such inorganic materials.

[0082] The second gate conductive layer is disposed on the first passivation layer 105. The second gate conductive layer may include a first capacitor electrode CE1 of a storage capacitor, which is disposed to at least partially overlap with the first gate electrode DT_G in the thickness direction. The first capacitor electrode CE1 may overlap with the first gate electrode DT_G in the thickness direction, with the first passivation layer 105 interposed therebetween, and a storage capacitor may be formed by the first capacitor electrode CE1 and the first gate electrode DT_G together with the first passivation layer 105 interposed therebetween. However, the present disclosure is not limited thereto. Alternatively, the first capacitor electrode CE1 of the storage capacitor may be disposed not to overlap with the first gate electrode DT_G in the thickness direction.

[0083] The second gate conductive layer may be formed as a single layer or a multilayer including one of Mo, Al, Cr, Au, Ti, Ni, Nd, Cu, and alloys thereof, but the present disclosure is not limited thereto.

[0084] The first interlayer insulating layer 107 is disposed on the second gate conductive layer. The first interlayer insulating layer 107 may be used as an insulating film between the second gate conductive layer and a layer disposed on the second gate conductive layer. The first interlayer insulating layer 107 may be formed to include an inorganic material (e.g., SiO x 、SiNx or SiON as an example), or is formed as a stack of such inorganic materials.

[0085] The first data conductive layer is disposed on the first interlayer insulating layer 107. The first data conductive layer may include first and second source / drain electrodes DT_SD1 and DT_SD2 of the driving transistor DT and first and second source / drain electrodes ST_SD1 and ST_SD2 of the switching transistor ST.

[0086] The first source / drain electrode DT_SD1 and the second source / drain electrode DT_SD2 of the driving transistor DT may contact the first doping region DT_ACTa and the second doping region DT_ACTb of the first active material layer DT_ACT through contact holes penetrating the first interlayer insulating layer 107, the first passivation layer 105, and the first gate insulating layer 103. The first source / drain electrode ST_SD1 and the second source / drain electrode ST_SD2 of the switching transistor ST may contact the third doping region ST_ACTa and the fourth doping region ST_ACTb of the second active material layer ST_ACT through contact holes penetrating the first interlayer insulating layer 107, the first passivation layer 105, and the first gate insulating layer 103. The first source / drain electrode DT_SD1 of the driving transistor DT and the first source / drain electrode ST_SD1 of the switching transistor ST may be electrically connected to the first light blocking layer BML1 and the second light blocking layer BML2, respectively, through other contact holes. If one of the first source / drain electrode DT_SD1 and the second source / drain electrode DT_SD2 of the driving transistor DT or one of the first source / drain electrode ST_SD1 and the second source / drain electrode ST_SD2 of the switching transistor ST is a source electrode, the other source / drain electrode may be a drain electrode, but the present disclosure is not limited thereto. Alternatively, if one of the first source / drain electrode DT_SD1 and the second source / drain electrode DT_SD2 of the driving transistor DT or one of the first source / drain electrode ST_SD1 and the second source / drain electrode ST_SD2 of the switching transistor ST is a drain electrode, the other source / drain electrode may be a source electrode.

[0087] The first data conductive layer may be formed as a single layer or a multilayer including one of Mo, Al, Cr, Au, Ti, Ni, Nd, Cu, and alloys thereof, but the present disclosure is not limited thereto.

[0088] The second interlayer insulating layer 108 is disposed on the first data conductive layer. The second interlayer insulating layer 108 may be disposed on the entire surface of the first interlayer insulating layer 107, cover the first data conductive layer, and protect the first data conductive layer. The second interlayer insulating layer 108 may be formed to include an inorganic material (such as SiO x 、SiN xor SiON as an example), or is formed as a stack of such inorganic materials.

[0089] The second data conductive layer is disposed on the second interlayer insulating layer 108. The second data conductive layer may include a first voltage line VL1, a second voltage line VL2, and a first conductive pattern CDP. A low potential voltage (or a first power supply voltage) to be supplied to the first electrode 210 may be applied to the first voltage line VL1, and a high potential voltage (or a second power supply voltage) to be supplied to the driving transistor DT may be applied to the second voltage line VL2. An alignment signal for aligning the light emitting device 300 may be applied to the first voltage line VL1 during manufacture of the display device 10.

[0090] The first conductive pattern CDP may be electrically connected to the first source / drain electrode DT_SD1 of the driving transistor DT through a contact hole formed in the second interlayer insulating layer 108. The first conductive pattern CDP may contact a second electrode 220 to be described later, and the driving transistor DT may transmit a second power supply voltage from a second voltage line VL2 to the second electrode 220 through the first conductive pattern CDP. The second data conductive layer is shown to include two first voltage lines VL1 and one second voltage line VL2, but the present disclosure is not limited thereto. Alternatively, the second data conductive layer may include more than two first voltage lines VL1 and more than one second voltage line VL2.

[0091] The second data conductive layer may be formed as a single layer or a multilayer including one of Mo, Al, Cr, Au, Ti, Ni, Nd, Cu, and alloys thereof, but the present disclosure is not limited thereto.

[0092] The first planarization layer 109 is disposed on the second data conductive layer. The first planarization layer 109 may include an organic insulating material, specifically, an organic material such as polyimide (PI) as an example, and may perform a surface planarization function.

[0093] A plurality of electrodes 210 and 220 , an outer bank 450 , a plurality of contact electrodes 261 and 262 , and a light emitting device 300 are disposed on the first planarization layer 109 .

[0094] The first electrode 210 may be disposed in each of the sub-pixels PXn to extend in the second direction DR2. The first electrode 210 may be disposed to extend into the sub-pixels PXn adjacent to each other in the second direction DR2. That is, the first electrodes 210 connected to each other may be disposed in the sub-pixels PXn adjacent to each other in the second direction DR2. The first electrode 210 may form a linear pattern on the entire surface of the display area DPA of the display device 10.

[0095] The display device 10 may include a first electrode 210 disposed in each of the sub-pixels PXn. For example, the first electrode 210 may include a first electrode line 210A and a second electrode line 210B. The first electrode line 210A and the second electrode line 210B may extend in the second direction DR2 and may be spaced apart from each other in the first direction DR1. A plurality of light emitting devices 300 may be disposed between the first electrode line 210A and the second electrode line 210B, and the first electrode line 210A and the second electrode line 210B may be electrically connected to both end portions of each of the light emitting devices 300. The same electrical signal may be applied to the first electrode line 210A and the second electrode line 210B, and the first electrode line 210A and the second electrode line 210B may form the first electrode 210.

[0096] The first electrode 210 may be directly disposed on the first planarization layer 109. The first electrode wire 210A and the second electrode wire 210B of the first electrode 210 may be disposed on the first planarization layer 109 to be spaced apart from each other and to face each other, and the light emitting device 300 may be disposed between the first electrode wire 210A and the second electrode wire 210B. As will be described later, the light emitting device 300 may be disposed between the first electrode wire 210A and the second electrode wire 210B to be at least partially placed on the first electrode wire 210A and the second electrode wire 210B. The first electrode wire 210A and the second electrode wire 210B may be electrically connected to the first end portion and the second end portion of the light emitting device 300, respectively.

[0097] The width WE1 of the first electrode line 210A and the second electrode line 210B and the distance DE between the first electrode line 210A and the second electrode line 210B are not particularly limited. However, in some embodiments, the distance DE between the first electrode line 210A and the second electrode line 210B may be less than the length of the light emitting device 300 ( Figure 5 ” LD”) and is greater than the distance between the first contact electrodes 261 ( Figure 2 The first electrode line 210A and the second electrode line 210B may be electrically connected to the first end portion and the second end portion of the light emitting device 300, respectively, through the first contact electrode 261. Since the first electrode line 210A and the second electrode line 210B are disposed to be spaced apart from each other by the distance DE, the first electrode line 210A and the second electrode line 210B may be electrically connected to the first end portion and the second end portion of the light emitting device 300, respectively. This will be described later.

[0098] The first electrode 210 may partially overlap the outer bank 450 along a boundary between the sub-pixels PXn adjacent to each other in the second direction DR2, and may be electrically connected to the first voltage line VL1 in a region overlapping with the outer bank 450. For example, the first electrode 210 may be formed in a region overlapping with the outer bank 450, and may contact the first voltage line VL1 through a first contact hole CT1 penetrating the first planarization layer 109. The first electrodes 210 of the sub-pixels PXn adjacent to each other in the first direction DR1 may be electrically connected to the first voltage line VL1 through the first contact hole CT1, and the same electrical signal applied to the first voltage line VL1 may be transmitted to a plurality of sub-pixels PXn through the first electrode 210 extending in the second direction DR2.

[0099] The second electrode 220 is disposed on the first electrode 210. For example, the second electrode 220 may be disposed to at least partially overlap the first electrode 210 in the thickness direction. The second electrode 220 may be disposed to correspond to each of the sub-pixels PXn. The second electrode 220 may be disposed in each of the sub-pixels PXn, and one second electrode 220 may not be connected to the second electrode 220 of other sub-pixels PXn, but may be spaced apart from the second electrode 220 of other sub-pixels PXn. As a result, the second electrode 220 may be disposed in an island pattern on the entire surface of the display device 10. As will be described later, a plurality of light emitting devices 300, a first contact electrode 261, a second contact electrode 262, and a first insulating layer 510 may be disposed between the second electrode 220 and the first electrode 210 of each of the sub-pixels PXn.

[0100] In a plan view, the second electrode 220 may have a shape in which one side extending in one direction and another side extending in another direction are angled, but the present disclosure is not limited thereto. Alternatively, the second electrode 220 may have a shape inclined relative to one direction or have a circular shape including a curved outer surface. The size of the second electrode 220 is not particularly limited, but may vary according to the area of ​​each of the sub-pixels PXn of the display device 10. The second electrode 220 may be formed to be smaller than each of the sub-pixels PXn, and may be disposed to be spaced apart from the boundary between adjacent sub-pixels PXn.

[0101] In one embodiment, the second electrode 220 may have a width or area different from that of the electrode lines 210A and 210B of the first electrode 210. For example, the width WE2 of the second electrode 220 in the first direction DR1 may be greater than the width WE1 of the electrode lines 210A and 210B. In addition, the width WE2 of the second electrode 220 may be greater than the sum of the width WE1 of the first electrode line 210A and the second electrode line 210B and the distance DE between the first electrode line 210A and the second electrode line 210B. Therefore, the second electrode 220 may cover both sides of each of the first electrode line 210A and the second electrode line 210B in the first direction DR1, but the present disclosure is not limited thereto.

[0102] The second electrode 220 may be disposed to be spaced apart from the first electrode 210 in a direction perpendicular to the top surface of the first substrate 101. For example, the second electrode 220 may be spaced apart from the first electrode 210 in a thickness direction and may be directly disposed on the first insulating layer 510 disposed between the first electrode 210 and the second electrode 220. A plurality of light emitting devices 300 may be disposed between the first electrode 210 and the second electrode 220, and a space between the first electrode 210 and the second electrode 220 may be filled with the first insulating layer 510. The second electrode 220 may be electrically connected to at least one end portion of each of the light emitting devices 300. For example, the second electrode 220 may be electrically connected to a second end portion of the light emitting device 300 through a second contact electrode 262, but the present disclosure is not limited thereto.

[0103] The second electrode 220 may be electrically connected to the driving transistor DT. For example, the second electrode 220 may contact the first conductive pattern CDP through a second contact hole CT2, and the second contact hole CT2 exposes a portion of the top surface of the first conductive pattern CDP by penetrating the first insulating layer 510 and the first planarization layer 109. The second electrode 220 may be electrically connected to the first source / drain electrode DT_SD1 of the driving transistor DT through the first conductive pattern CDP, and may receive a second power supply voltage applied through the second voltage line VL2. The second electrode 220 may be electrically connected to different driving transistors DT disposed in different sub-pixels PXn, and may receive a second power supply voltage independently of each of the different driving transistors DT.

[0104] Each of the sub-pixels PXn is shown to include one first electrode 210 (which includes a pair of electrode lines 210A and 210B) and one second electrode 220, but the present disclosure is not limited thereto. Optionally, in some embodiments, more than one first electrode 210 and more than one second electrode 220 may be provided in each of the sub-pixels PXn. The shapes of the first electrode 210 and the second electrode 220 provided in each of the sub-pixels PXn are not particularly limited, and the first electrode 210 and the second electrode 220 may be arranged in various layouts. For example, the first electrode 210 and the second electrode 220 may be partially curved or bent, and one of the first electrode 210 and the second electrode 220 may be arranged to surround the other electrode. At least a portion of the first electrode 210 and the second electrode 220 may be spaced apart from each other and face each other, and the structure and shape of the first electrode 210 and the second electrode 220 are not particularly limited, as long as an area in which the light emitting device 300 is arranged is formed.

[0105] The electrodes 210 and 220 may be electrically connected to the light emitting device 300, and a predetermined voltage may be applied to the electrodes 210 and 220 so that the light emitting device 300 may emit light. For example, the electrodes 210 and 220 may be electrically connected to the light emitting device 300, and an electrical signal applied to the electrodes 210 and 220 may be transmitted to the light emitting device 300 through the contact electrodes 261 and 262.

[0106] In one embodiment, the first electrode 210 may be commonly connected throughout a plurality of sub-pixels PXn, and the second electrode 220 may be separated between the plurality of sub-pixels PXn. However, the present disclosure is not limited thereto. Alternatively, the first electrode 210 may be separated between the plurality of sub-pixels PXn, and the second electrode 220 may be commonly connected throughout the plurality of sub-pixels PXn. One of the first electrode 210 and the second electrode 220 may be electrically connected to the anode of the light-emitting device 300, and the other electrode may be electrically connected to the cathode of the light-emitting device 300. However, the present disclosure is not limited thereto.

[0107] The first electrode 210 and the second electrode 220 may be used to form an electric field in each of the sub-pixels PXn to align the light emitting device 300. By applying an alignment signal to the first electrode line 210A and the second electrode line 210B of the first electrode 210 to form an electric field between the first electrode 210 and the second electrode 220, the light emitting device 300 may be disposed between the first electrode line 210A and the second electrode line 210B. The light emitting device 300 may be sprayed onto the first electrode 210 by inkjet printing in a state of being dispersed in ink. In response to applying an alignment signal between the first electrode line 210A and the second electrode line 210B, the light emitting device 300 may receive a dielectrophoretic force and thus may be aligned between the first electrode line 210A and the second electrode line 210B of the first electrode 210.

[0108] The electrodes 210 and 220 may include a transparent conductive material. For example, the electrodes 210 and 220 may include a material such as ITO, IZO, or ITZO, but the present disclosure is not limited thereto. The light emitting device 300 may emit light in a direction toward both end portions thereof, specifically, in a direction facing the top surface of the first electrode 210. In some embodiments, the first electrode 210 may include a conductive material having a high reflectivity, and thus may be able to reflect light traveling toward the top surface of the first electrode 210 after being emitted by the light emitting device 300. The second electrode 220 may include a transparent material, and thus in each of the sub-pixels PXn, some of the light emitted by the light emitting device 300 may be transmitted through the second electrode 220. In one embodiment, the first electrode 210 may include a material having a high reflectivity, such as silver (Ag), copper (Cu), or Al.

[0109] However, the present disclosure is not limited thereto. Alternatively, the first electrode 210 may have a stack of one or more layers of a transparent conductive material and one or more layers of a metal having a high reflectivity, or may be formed as a single layer including a transparent conductive material and a metal having a high reflectivity. In one embodiment, the first electrode 210 may have a stack of ITO / Ag / ITO / IZO, or may include an alloy of Al, Ni, or lanthanum (La).

[0110] The outer bank 450 may be disposed on the first planarization layer 109. Figure 2 and Figure 3 As shown in , the outer bank 450 may be disposed along the boundary between the sub-pixels PXn. The outer bank 450 may be disposed to extend at least in the second direction DR2, and disposed to surround not only the region between the electrode lines 210A and 210B in which the light emitting device 300 is disposed, but also at least some of the light emitting devices 300. The outer bank 450 may also include a portion extending in the first direction DR1, and thus may form a grid pattern over the entire surface of the display area DPA.

[0111] The height of the outer bank 450 may be greater than the height of the first insulating layer 510. In addition, the height of the top surface of the outer bank 450 may be greater than the height of the top surface of the second electrode 220. The outer bank 450 may separate adjacent sub-pixels PXn from each other, and during the manufacture of the display device 10, it may prevent ink from overflowing between adjacent sub-pixels PXn in an inkjet printing process for arranging the light-emitting device 300. That is, the outer bank 450 may separate inks in which different sets of light-emitting devices 300 for different sub-pixels PXn are dispersed without mixing together. The outer bank 450 may include polyimide (PI), but the present disclosure is not limited thereto.

[0112] Not only the light emitting device 300 but also the first contact electrode 261 , the second contact electrode 262 , and the first insulating layer 510 may be disposed between the first electrode 210 and the second electrode 220 .

[0113] The light emitting device 300 may be disposed between the first electrode line 210A and the second electrode line 210B in each of the sub-pixels PXn. The light emitting device 300 may also be disposed between the first electrode 210 and the second electrode 220. A first end of the light emitting device 300 may be electrically connected to the first electrode 210, and a second end of the light emitting device 300 may be electrically connected to the second electrode 220.

[0114] The light emitting devices 300 may be spaced apart from each other and may be aligned substantially parallel to each other. The distance between the light emitting devices 300 is not particularly limited. Some of the light emitting devices 300 may be arranged adjacent to each other to form a group, and some of the light emitting devices 300 may be arranged to be spaced apart from each other by a predetermined distance to form another group. Alternatively, the light emitting devices 300 may be aligned with an uneven density in one direction. In addition, in one embodiment, the light emitting device 300 may extend in one direction, and the direction in which the first electrode 210 extends may form a substantially right angle with the direction in which the light emitting device 300 extends. However, the present disclosure is not limited thereto. Alternatively, the light emitting device 300 may extend diagonally relative to the direction in which the first electrode 210 extends.

[0115] The light emitting device 300 may be disposed between the first electrode line 210A and the second electrode line 210B. For example, the first end portion of the light emitting device 300 may be disposed on the first electrode line 210A, and the second end portion of the light emitting device 300 may be disposed on the second electrode line 210B. Both end portions of each of the light emitting devices 300 may be disposed to overlap the first electrode line 210A and the second electrode line 210B in the thickness direction. As described above, the length of the light emitting device 300 in one direction ( Figure 5The distance "LD" of the first electrode line 210A and the second electrode line 210B may be greater than the distance DE between the first electrode line 210A and the second electrode line 210B. The first end portion and the second end portion of each of the light emitting devices 300 may be in direct contact with the first electrode line 210A and the second electrode line 210B, respectively, but the present disclosure is not limited thereto. Optionally, in some embodiments, an insulating layer may be further provided to cover the first electrode 210, and the light emitting device 300 may be directly provided on the insulating layer.

[0116] In each of the light emitting devices 300, a plurality of layers may be arranged in a direction perpendicular to the top surface of the first substrate 101 or the first planarization layer 109. The light emitting device 300 may extend in one direction, and a plurality of semiconductor layers may be sequentially arranged in one direction in each of the light emitting devices 300. The light emitting device 300 may be arranged so that the direction in which the light emitting device 300 extends may be parallel to the first planarization layer 109, and a plurality of semiconductor layers included in each of the light emitting devices 300 may be sequentially arranged in a direction parallel to the top surface of the first planarization layer 109. However, the present disclosure is not limited thereto. Alternatively, in the case where the light emitting device 300 has a different structure, a plurality of layers may be arranged in a direction perpendicular to the first planarization layer 109 in each of the light emitting devices 300.

[0117] As will be described later, each of the light emitting devices 300 may include a main body portion ( Figure 5 BP), and an active layer ( Figure 5 The luminous part of "330") ( Figure 5 The light emitting portion AP may partially protrude from the top surface of the body portion BP of the light emitting device 300, and the body portion BP of the light emitting device 300 may protrude from both sides of the light emitting portion AP of the light emitting device 300. Each of the light emitting devices 300 may include a first end portion, a second end portion, and a third end portion in which the light emitting portion AP is disposed.

[0118] The body portion BP of the light emitting device 300 may be disposed on the first electrode line 210A and the second electrode line 210B, and the light emitting portion AP of the light emitting device 300 may be disposed to face one direction relative to the body portion BP. For example, the first end portion of the light emitting device 300 may be disposed on the first electrode line 210A, and the second end portion of the light emitting device 300 may be disposed on the second electrode line 210B. In addition, the light emitting device 300 may be disposed so that the light emitting portion AP of the light emitting device 300 may face the direction along which the first electrode 210 extends, that is, the second direction DR2, or may face the upward direction of the first substrate 101. Depending on the direction in which the light emitting portion AP of the light emitting device 300 faces, the light emitting device 300 may include different types of light emitting devices 300. For example, the light emitting device 300 may include a first light emitting device 300A whose light emitting portion AP faces the upward direction of the first substrate 101, and a second light emitting device 300B and a third light emitting device 300C whose light emitting portions AP face the second direction DR2.

[0119] As will be described later, each of the light emitting portions AP of the light emitting device 300 may include an active layer 330, and the active layer 330 may emit light of a specific wavelength band in response to an electrical signal transmitted thereto. Since the display device 10 includes the light emitting devices 300A, 300B, and 300C whose alignment directions of the light emitting portions AP are different from each other, the display device 10 can emit light not only in the upward direction of the first substrate 101 but also in the lateral direction.

[0120] In some embodiments, the body portion BP of the light emitting device 300 may be in direct contact with the first electrode 210. Figure 3 As shown in , the light emitting device 300 may be disposed on the first electrode 210, and the first and second end portions of the body portion BP of the light emitting device 300 may directly contact the first and second electrode lines 210A and 210B, respectively. Figure 3 The light emitting device 300 is a first light emitting device 300A whose light emitting portion AP is disposed to face the upward direction of the first substrate 101. The bottom surfaces of the first end portion and the second end portion of the body portion BP of the first light emitting device 300A may be directly in contact with the first electrode line 210A and the second electrode line 210B, respectively, but the present disclosure is not limited thereto. As will be described later, the light emitting portions AP of the second light emitting device 300B and the third light emitting device 300C may be disposed to face the second direction DR2, and the sides of the first end portion and the second end portion of each of the second light emitting device 300B and the third light emitting device 300C may be disposed to contact the first electrode 210. This will be described later.

[0121] The light emitting device 300 may include an active layer 330 including different materials, and thus may emit light of different wavelength bands to the outside. The display device 10 may include a light emitting device 300 capable of emitting light of different wavelength bands. The light emitting device 300 of the first sub-pixel PX1 may include an active layer 330 emitting a first color light having a first wavelength as a center wavelength, the light emitting device 300 of the second sub-pixel PX2 may include an active layer 330 emitting a second color light having a second wavelength as a center wavelength, and the light emitting device 300 of the third sub-pixel PX3 may include an active layer 330 emitting a third color light having a third wavelength as a center wavelength.

[0122] Thus, the first subpixel PX1 may emit a first color light, the second subpixel PX2 may emit a second color light, and the third subpixel PX3 may emit a third color light. In some embodiments, the first color light may be blue light having a center wavelength of 450nm to 495nm, the second color light may be green light having a center wavelength of 495nm to 570nm, and the third color light may be red light having a center wavelength of 620nm to 752nm. However, the present disclosure is not limited thereto. Alternatively, the first subpixel PX1, the second subpixel PX2, and the third subpixel PX3 may include the same type of light emitting device 300, and thus may all emit light of the same color.

[0123] The first insulating layer 510 may be disposed between the first electrode 210 and the second electrode 220 to surround the outer surface of each of the light emitting devices 300. For example, the first insulating layer 510 may be disposed on the first planarization layer 109 to cover the first electrode 210, and may be in direct contact with the first planarization layer 109 and the first electrode 210. The first insulating layer 510 may prevent the first electrode 210 from directly contacting the second electrode 220, and may insulate the first electrode 210 and the second electrode 220 from each other. In addition, as will be described later, the first insulating layer 510 may insulate the first contact electrode 261 and the second contact electrode 262 from each other.

[0124] The first insulating layer 510 may be disposed on the first planarization layer 109 and may form a pattern in each of the subpixels PXn or in some of the subpixels PXn. In some embodiments, the first insulating layer 510 may form an island shape or a linear shape on the entire surface of the display device 10.

[0125] The first insulating layer 510 may be disposed to surround the outer surface of each of the light emitting devices 300 disposed on the first electrode 210. The first insulating layer 510 may be thick enough to cover the light emitting devices 300 disposed on the first electrode 210. In one embodiment, the thickness of the first insulating layer 510 may be at least greater than the height ( Figure 5 ”HD”) and the thickness of the first electrode 210. The first insulating layer 510 may compensate for the height difference formed by the first electrode 210 and the light emitting device 300 disposed on the first planarization layer 109. A hole HP exposing at least a portion of the outer surface of each of the light emitting devices 300 may be formed in the first insulating layer 510, and a second contact electrode 262 to be described later may be disposed in the hole HP. At least one end portion of each of the light emitting devices 300 may be exposed by the hole HP in the first insulating layer 510, and the exposed portion of the light emitting device 300 may contact the second contact electrode 262. A second contact hole CT2 penetrating the first insulating layer 510 may be formed in the first insulating layer 510, and the second electrode 220 may be electrically connected to the driving transistor DT through the second contact hole CT2.

[0126] In some embodiments, the first insulating layer 510 may be disposed even in the space between the first electrode line 210A, the second electrode line 210B, and the light emitting device 300. Both end portions of each of the light emitting devices 300 may be disposed on the first electrode line 210A and the second electrode line 210B, and a space may be formed between the light emitting device 300 and the first electrode line 210A and the second electrode line 210B. The material of the first insulating layer 510 may fill the space during manufacture of the display device 10.

[0127] The first end portion and the second end portion of each of the light emitting devices 300 may be disposed on the first electrode line 210A and the second electrode line 210B. The display device 10 may include a first contact electrode 261 disposed on the first electrode line 210A and the second electrode line 210B, and the first end portion and the second end portion of each of the light emitting devices 300 may contact the first contact electrode 261. In addition, the display device 10 may include a second contact electrode 262 disposed between the light emitting device 300 and the second electrode 220, and the third end portion of the light emitting device 300 may contact the second contact electrode 262.

[0128] The first contact electrode 261 may extend in one direction on the first electrode 210. The first contact electrode 261 may include a first pattern 261A and a second pattern 261B, and the first pattern 261A and the second pattern 261B may be disposed on the first electrode line 210A and the second electrode line 210B, respectively. Similar to the first electrode 210, the first pattern 261A and the second pattern 261B may be disposed to extend in the second direction DR2, and may be spaced apart from each other in the first direction DR1. The first contact electrode 261 may form a linear pattern in each of the sub-pixels PXn.

[0129] The first pattern 261A and the second pattern 261B may be at least partially disposed on the first electrode line 210A and the second electrode line 210B, respectively, and directly contact therewith, but the present disclosure is not limited thereto. In some embodiments, another insulating layer may be further disposed on the first electrode 210, and the first contact electrode 261 may be disposed on the insulating layer. In this case, the first contact electrode 261 may be in direct contact with the first electrode 210 through an opening that exposes a portion of the top surface of the first electrode 210 by penetrating the insulating layer.

[0130] The first contact electrode 261 may directly contact a portion of the light emitting device 300, for example, a first end portion and a second end portion of each of the light emitting devices 300. The first pattern 261A of the first contact electrode 261 may contact the first end portion of the light emitting device 300, and the second pattern 261B of the first contact electrode 261 may contact the second end portion of the light emitting device 300. In some embodiments, the first pattern 261A and the second pattern 261B may contact the top surface and the side of the first end portion and the second end portion of each of the light emitting devices 300, but may be spaced apart from a protruding portion of the light emitting device 300 (i.e., a third end portion of the light emitting device 300). Figure 3 The first pattern 261A and the second pattern 261B are shown to be in contact with the top surface and the side of the first end portion and the second end portion of each of the light emitting devices 300, respectively, but the present disclosure is not limited thereto. The first pattern 261A and the second pattern 261B may extend in the second direction DR2 on the first electrode 210, and thus may be disposed even in a gap between the light emitting devices 300 to surround the first end portion and the second end portion of each of the light emitting devices 300. As will be described later, the semiconductor layer of each of the light emitting devices 300 may be partially exposed in the first end portion and the second end portion of each of the light emitting devices 300, and the first pattern 261A and the second pattern 261B may be in direct contact with the semiconductor layer of each of the light emitting devices 300. When the semiconductor layer of each of the light emitting devices 300 is in direct contact with the first contact electrode 261, the light emitting device 300 may be electrically connected to the first electrode 210.

[0131] The width W1 of the first pattern 261A and the second pattern 261B of the first contact electrode 261 may be smaller than the width WE1 of the first electrode line 210A and the second electrode line 210B. Since the first pattern 261A and the second pattern 261B are respectively disposed on the first electrode line 210A and the second electrode line 210B and are formed to have a width W1 smaller than the first electrode line 210A and the second electrode line 210B, portions of the top surfaces of the first electrode line 210A and the second electrode line 210B may be exposed, but the present disclosure is not limited thereto. In some embodiments, the width W1 of the first pattern 261A and the second pattern 261B may be greater than the width WE1 of the first electrode line 210A and the second electrode line 210B, and the first contact electrode 261 may be disposed to cover the top surface of the first electrode 210.

[0132] The distance DC between the first pattern 261A and the second pattern 261B may be smaller than the distance DE between the first electrode line 210A and the second electrode line 210B. The distance DC between the first pattern 261A and the second pattern 261B may vary according to the length of the light emitting device 300 and the length of the first end portion and the second end portion of each of the light emitting devices 300. As described above, the distance DE between the first electrode line 210A and the second electrode line 210B may be smaller than the length of the light emitting device 300 so that both end portions of each of the light emitting devices 300 may be placed on the electrode lines 210A and 210B. Conversely, the distance DC between the first pattern 261A and the second pattern 261B may be controlled to cover both end portions of each of the light emitting devices 300. In one embodiment, the distance DC between the first pattern 261A and the second pattern 261B may be smaller than the distance DE between the electrode lines 210A and 210B, and the first pattern 261A and the second pattern 261B may be disposed to surround a portion of the first end portion and the second end portion of each of the light emitting devices 300.

[0133] In a plan view, the second contact electrode 262 may be disposed between the first pattern 261A and the second pattern 261B and may extend in the second direction DR2. That is, the second contact electrode 262 may be arranged in substantially the same layout as the first contact electrode 261 and may be disposed in each of the subpixels PXn to form a linear pattern.

[0134] The second contact electrode 262 may be disposed between the light emitting device 300 and the second electrode 220. In one embodiment, the second contact electrode 262 may be connected to the third end portion of the light emitting device 300 or the light emitting portion ( Figure 5The second contact electrode 262 may be formed in the first insulating layer 510 to be disposed in the hole HP exposing a portion of the third end portion of the light emitting device 300. The third end portion of the light emitting device 300 may be partially exposed by the hole HP, and the second contact electrode 262 may be disposed in the hole HP to be in direct contact with the third end portion of the light emitting device 300. The semiconductor layer of each of the light emitting devices 300 may be partially exposed in the third end portion of the light emitting device 300, and the second contact electrode 262 may be in direct contact with the semiconductor layer of each of the light emitting devices 300. When the semiconductor layer of each of the light emitting devices 300 is in direct contact with the second contact electrode 262, the light emitting device 300 may be electrically connected to the second electrode 220. The second electrode 220 may be disposed on the first insulating layer 510 to cover the second contact electrode 262.

[0135] Figure 3 The second contact electrode 262 is shown to be in direct contact with the top surface of the third end portion of the light emitting device 300, but the present disclosure is not limited thereto. The hole HP formed in the first insulating layer 510 may expose not only a portion of the third end portion of the light emitting device 300, but also the width ( Figure 5 The first and second surfaces of the light emitting device 300 are disposed in a direction of “WD” (in FIG. 1 ), and the second contact electrode 262 may be disposed to substantially surround a middle portion of the light emitting device 300. This will be described later.

[0136] In one embodiment, the width W2 of the second contact electrode 262 may be the same as the width W1 of the first pattern 261A and the second pattern 261B of the first contact electrode 261. The width W2 of the second contact electrode 262 may be less than the width WE2 of the second electrode 220, and the second electrode 220 may completely cover the second contact electrode 262. However, the present disclosure is not limited thereto, and the width W2 of the second contact electrode 262 may vary. For example, the second contact electrode 262 may be formed to be longer than the third end portion of the light emitting device 300, and thus may contact a larger area of ​​the third end portion of the light emitting device 300.

[0137] The contact electrodes 261 and 262 may include a conductive material. For example, the contact electrodes 261 and 262 may include ITO, IZO, ITZO, or Al. For example, the contact electrodes 261 and 262 may include a transparent conductive material, and the light emitted from the light emitting device 300 may travel toward the electrodes 210 and 220 through the contact electrodes 261 and 262. When the first electrode 210 includes a material having a high reflectivity, the light incident on the first electrode 210 may be reflected in an upward direction toward the first substrate 101. On the contrary, when the second electrode 220 includes a transparent material, the light incident on the second electrode 220 may pass through the second electrode 220. However, the present disclosure is not limited thereto.

[0138] The encapsulation layer 550 may be disposed on the entire surface of the first substrate 101. The encapsulation layer 550 may protect elements disposed on the first substrate 101 from external environments.

[0139] The first insulating layer 510 and the encapsulation layer 550 may include an inorganic insulating material or an organic insulating material. In one embodiment, the first insulating layer 510 and the encapsulation layer 550 may include an inorganic insulating material such as SiO x 、SiN x 、SiO x N y 、Alumina (Al 2 O 3 ) or aluminum nitride (AlN). In another embodiment, the first insulating layer 510 and the encapsulation layer 550 may include an organic insulating material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene resin, polyphenylene sulfide resin, benzocyclobutene, cardo resin, siloxane resin, silsesquioxane resin, polymethyl methacrylate, polycarbonate, or polymethyl methacrylate-polycarbonate synthetic resin. However, the present disclosure is not limited to these embodiments.

[0140] Figure 3 The first insulating layer 510 is shown to have a flat top surface regardless of any height difference thereunder, but the present disclosure is not limited thereto. The first insulating layer 510 may include an inorganic insulating material, may have a uniform thickness, and may have a curved top surface depending on the height difference formed by elements disposed thereunder.

[0141] Figure 4 is a partial cross-sectional view of a display device according to another embodiment of the present disclosure.

[0142] refer to Figure 4 In the display device 10, the first insulating layer 510 may have a uniform thickness and may be disposed to cover the first electrode 210, the first contact electrodes 261A and 261B, and the light emitting device 300. The first insulating layer 510 may be deposited in each sub-pixel PXn to cover the first electrode 210, the first contact electrodes 261A and 261B, and the light emitting device 300, and may be stepped following the shapes of the first electrode 210, the first contact electrodes 261A and 261B, and the light emitting device 300. Therefore, the second electrode 220 disposed on the first insulating layer 510 may be curved along the top surface of the first insulating layer 510.

[0143] The first insulating layer 510 may be deposited to cover not only the light emitting device 300 but also the first contact electrodes 261A and 261B and the first electrode 210, and then may be patterned to expose a portion of the top of the light emitting device 300. The second contact electrode 262 may be disposed in the patterned portion of the first insulating layer 510 and may be electrically connected to the light emitting device 300. In addition to the above-mentioned features, Figure 4 The implementation method and Figure 3 The implementation scheme is the same as that of , and therefore, a detailed description thereof will be omitted.

[0144] The display device 10 may include a plurality of sub-pixels PXn and pixels PX in which a plurality of light-emitting devices 300 are disposed, and thus may be capable of emitting light of a specific wavelength band in each region thereof. The light-emitting devices 300 may emit light of different colors, and thus may display different colors in each of the sub-pixels PXn, but the present disclosure is not limited thereto. The light-emitting devices 300 in each of the sub-pixels PXn may emit light of the same color, and the display device 10 may further include a color conversion substrate (not shown) disposed to be spaced apart from and facing the first substrate 101, and converting the color of the light emitted by the light-emitting devices 300. The color conversion substrate may include a plurality of color control layers and anti-color mixing members, and the color control layer may be disposed to correspond to the sub-pixels PXn of the display device 10. The light emitted by the light-emitting device 300 may be incident on the color control layer, and the color control layer may include a light conversion layer (or a wavelength conversion layer hereinafter) that converts the wavelength of the incident light, and a light transmission layer through which the incident light is transmitted while maintaining the wavelength of the incident light. The wavelength conversion layer or the light transmission layer may be disposed to be separated between the sub-pixels PXn, and the color mixing prevention member may be disposed along a boundary between the wavelength conversion layer or the light transmission layer.

[0145] The wavelength conversion layer may be provided in a sub-pixel PXn in which the color of the light incident from the light emitting device 300 needs to be changed because the color of the light is different from the color of the sub-pixel PXn. The light transmission layer may be provided in a sub-pixel PXn whose color is the same as the color of the light incident from the light emitting device 300. However, the present disclosure is not limited thereto. Only a wavelength conversion layer may be provided in a sub-pixel PXn in which the light emitting device 300 emits light of a color different from the color of the sub-pixel PXn (e.g., ultraviolet light), without providing a light transmission layer. Alternatively, only a light transmission layer may be provided in a sub-pixel PXn in which the light emitting device 300 emits light of the same color as the sub-pixel PXn, without providing a wavelength conversion layer.

[0146] Each of the wavelength conversion layers may include a wavelength conversion material and a base resin in which the wavelength conversion material is dispersed. Each of the light transmission layers may include a scatterer and a base resin in which the scatterer is dispersed.

[0147] The base resin may include a light-transmitting organic material. For example, the base resin may include an epoxy resin, an acrylic resin, a cardo resin, or an imide resin. For all wavelength conversion layers or for all light transmission layers, the base resin may be formed of the same material, but the present disclosure is not limited thereto.

[0148] The scatterers may be particles of metal oxides or particles of organic materials. Examples of metal oxides include titanium oxide (TiO 2 ), zirconium oxide (ZrO 2 ), aluminum oxide (Al 2 O 3 ), indium oxide (In 2 O 3 ), zinc oxide (ZnO) or tin oxide (SnO 2 ), and the organic material may be an acrylic resin or a urethane resin.

[0149] The wavelength conversion material may be a quantum dot, a quantum rod, a phosphor, etc. The quantum dot may include a group IV nanocrystal, a group II-VI compound nanocrystal, a group III-V compound nanocrystal, a group IV-VI compound nanocrystal, or a combination thereof. However, the present disclosure is not limited thereto.

[0150] The color mixing prevention member may include an organic material. The color mixing prevention member may include a light absorbing material capable of absorbing a visible light wavelength band. In one embodiment, the color mixing prevention member may include an organic light blocking material.

[0151] The color conversion substrate may include a separate substrate, may be disposed to be spaced apart from and face the first substrate 101 on which the light emitting device 300 is disposed, and may be coupled to the first substrate 101 via a sealing member, but the present disclosure is not limited thereto. In some embodiments, the wavelength conversion layer and the light transmission layer of the color conversion substrate may be directly formed on the sub-pixel PXn in which the light emitting device 300 is disposed without a separate substrate. In this case, the wavelength conversion layer and the light transmission layer may be directly disposed on the encapsulation layer 550, and the anti-color mixing member may be disposed on the outer bank 450.

[0152] The light emitting device 300 may be a light emitting diode (LED), specifically, an inorganic LED having a size of several micrometers or nanometers and formed of an inorganic material. The inorganic LED may be aligned between two opposing electrodes in response to an electric field formed between two opposing electrodes in which polarity is formed. The light emitting device 300 may be aligned between the two opposing electrodes by the electric field.

[0153] Each of the light emitting devices 300 may include a plurality of semiconductor layers and an insulating film partially surrounding the semiconductor layers. The semiconductor layer of each of the light emitting devices 300 may include a semiconductor layer doped with impurities of any conductivity type (e.g., p-type or n-type). The semiconductor layer may receive an electrical signal applied thereto from an external source and may thus emit light of a specific wavelength band.

[0154] Figure 5 is a perspective view of a light emitting device according to an embodiment of the present disclosure. Figure 6 yes Figure 5 A cross-sectional view of a light emitting device. Figure 5 1 and 2. A plurality of semiconductor layers of the light emitting device 300 are shown, and a portion of the insulating film 380 is removed therefrom, and Figure 6 is a cross-sectional view taken along a direction in which the light emitting device 300 extends.

[0155] refer to Figure 5 and Figure 6 , the light emitting device 300 may include a plurality of semiconductor layers and an insulating film 380 partially surrounding the outer surface of the semiconductor layer. The light emitting device 300 may extend at least partially in one direction, and may include a portion extending in a direction perpendicular to the direction in which the semiconductor layers are stacked. For example, the light emitting device 300 may include a main body portion BP extending in one direction, and a light emitting portion AP formed on the main body portion BP. As will be described later, the light emitting portion AP, which is a portion of the light emitting device 300 in which the active layer 330 is disposed, may be a portion of the light emitting device 300 that emits light in response to a received electrical signal.

[0156] The main body BP and the light emitting part AP of the light emitting device 300 may have different lengths in one direction. The length LD of the main body BP may be greater than the length LA of the light emitting part AP. The light emitting part AP may be formed on one surface of the main body BP and may protrude from the surface of the main body BP. A portion of the surface of the main body BP may be exposed due to the absence of the light emitting part AP thereon, and the semiconductor layer may be directly exposed on the exposed portion of the surface of the main body BP. As described above, the light emitting device 300 may include a first end portion and a second end portion (which are two end portions of the main body BP) and a third end portion in which the light emitting part AP is disposed. The first end portion and the second end portion of the light emitting device 300 may be two end portions of the main body BP exposed due to the absence of the light emitting part AP. The third end portion protruding beyond the main body BP may be an end portion of the light emitting device 300 in which the light emitting part AP is disposed.

[0157] The main body portion BP, the light emitting portion AP, and the first end portion, the second end portion, and the third end portion may simply be used to define a portion of the light emitting device 300 or a portion of a semiconductor layer of the light emitting device 300, and may be integrally formed together to form the light emitting device 300, rather than being formed separately from each other. That is, the main body portion BP, the light emitting portion AP, and the first end portion, the second end portion, and the third end portion may represent a portion of the light emitting device 300. However, the main body portion BP, the light emitting portion AP, and the first end portion, the second end portion, and the third end portion are not necessarily limited to a portion of the light emitting device 300 including a plurality of semiconductor layers, but may be understood as representing a portion of an element of the light emitting device 300, such as a portion of the first semiconductor layer 310, the active layer 330, and the second semiconductor layer 320.

[0158] The light emitting device 300 may include a plurality of semiconductor layers, and an end portion of the light emitting device 300 may be in direct contact with the first contact electrode 261 or the second contact electrode 262 described above. The first end portion, the second end portion, and the third end portion of the light emitting device 300 may include a portion where the insulating film 380 is not provided and the semiconductor layer is exposed. The exposed semiconductor layer may be in direct contact with the first contact electrode 261 or the second contact electrode 262.

[0159] The body portion BP and the light emitting portion AP of the light emitting device 300 may have the same width, namely, the width WD. As a result, the first surface and the second surface of the light emitting device 300 in the direction of the width WD may be flat without any protrusions thereon. The length LD of the body portion BP of the light emitting device 300 may be greater than the length LA of the light emitting portion AP, but the lengths LC of the first and second end portions of the body portion BP may be less than the length LA of the light emitting portion AP. Since the light emitting portion AP has the length LA and the width WD, the active layer 330 may have a relatively large area, and the emission efficiency of the light emitting device 300 may be improved. The length LD of the body portion BP of the light emitting device 300 may be greater than the height HD of the light emitting device 300.

[0160] In one embodiment, the length LD of the body portion BP of the light emitting device 300 may be 3 μm to 10 μm or 5 μm to 8 μm, preferably about 7 μm. The height HD of the light emitting device 300 may be 0.1 μm to 5 μm or 0.3 μm to 2 μm, preferably 0.5 μm to 1 μm. The height HA of the light emitting portion AP may be 100 nm to 500 nm, and the width WD of the light emitting device 300 may be 300 nm to 700 nm. However, the present disclosure is not limited thereto, and the width WD of the light emitting device 300 of the display device 10 and the height HA of the light emitting portion AP may vary according to the composition of the active layer 330. Preferably, the width WD of the light emitting device 300 may be about 500 nm, and the height HA of the light emitting portion AP may be about 150 nm.

[0161] Each of the sides of the light emitting device 300 is shown to extend in one direction, and the corners at which the sides of the light emitting device 300 intersect are shown to be angled. That is, a portion of the light emitting device 300 may have a polygonal prism shape, such as a cube, a rectangular parallelepiped, or a hexagonal prism shape, but the present disclosure is not limited thereto. Alternatively, the light emitting device 300 may have a curved shape, such as a rod, a wire, or a tube shape. The corners at which the sides of the light emitting device 300 intersect will be described below as being angled, such as Figure 4 and Figure 5 as shown in .

[0162] The semiconductor layer of the light emitting device 300 may include a first semiconductor layer 310, a second semiconductor layer 320, and an active layer 330. The light emitting device 300 may further include a sub-semiconductor layer 390 disposed below the first semiconductor layer 310 and an electrode layer 370 disposed on the second semiconductor layer 320. The first semiconductor layer 310 and the sub-semiconductor layer 390 of the light emitting device 300 may be disposed in the body portion BP of the light emitting device 300, and a portion of the first semiconductor layer 310, the active layer 330, the second semiconductor layer 320, and the electrode layer 370 may be disposed in the light emitting portion AP of the light emitting device 300. The insulating film 380 may surround the outer surface of the semiconductor layer of the light emitting device 300, but may be disposed to expose a portion of the semiconductor layer of the light emitting device 300. The light emitting device 300 is shown as including both the sub-semiconductor layer 390 and the electrode layer 370, but the present disclosure is not limited thereto. Alternatively, at least one of the sub-semiconductor layer 390 and the electrode layer 370 may not be disposed.

[0163] Specifically, the sub-semiconductor layer 390 may be a semiconductor that is not doped with impurities. For example, the sub-semiconductor layer 390 may include the same semiconductor material as the first semiconductor layer 310, but may be a semiconductor layer that is not doped with n-type or p-type dopants. In one embodiment, the sub-semiconductor layer 390 may include a semiconductor material, namely, Alx Ga y In 1-x-y N (where 0≤x≤1, 0≤y≤1, and 0≤x+y≤1), and may be, for example, at least one of undoped AlGaInN, GaN, AlGaN, InGaN, AlN, and InN. The sub-semiconductor layer 390 may have a thickness of 0.01 μm to 0.1 μm, but the present disclosure is not limited thereto. In some embodiments, the sub-semiconductor layer 390 may be provided.

[0164] The first semiconductor layer 310 may be disposed on the sub-semiconductor layer 390. The first semiconductor layer 310 may be an n-type semiconductor. For example, in the case where the light emitting device 300 emits light of a blue wavelength, the first semiconductor layer 310 may include a semiconductor material, namely, Al x Ga y In 1-x-y N (where 0≤x≤1, 0≤y≤1, and 0≤x+y≤1). For example, the first semiconductor layer 310 may include at least one of AlGaInN, GaN, AlGaN, InGaN, AlN, and InN doped with an n-type dopant. The first semiconductor layer 310 may be doped with an n-type dopant, and the n-type dopant may be, for example, Si, Ge, Se, or Sn. For example, the first semiconductor layer 310 may be n-GaN doped with n-type Si. The first semiconductor layer 310 may have a thickness of 0.3 μm to 0.75 μm, but the present disclosure is not limited thereto.

[0165] The first semiconductor layer 310 may include a first portion corresponding to the body portion BP of the light emitting device 300 and a second portion corresponding to the light emitting portion AP of the light emitting device 300. The second portion may be formed on a portion of the first portion and may protrude from a portion of the top surface of the first portion. The length LD of the first portion of the first semiconductor layer 310 may be greater than the length LA of the second portion. The sub-semiconductor layer 390 may be disposed on the bottom surface of the first portion of the first semiconductor layer 310 and in direct contact therewith, and the active layer 330, the second semiconductor layer 320, and the electrode layer 370 may be sequentially disposed on the second portion of the first semiconductor layer 310. However, the present disclosure is not limited thereto.

[0166] The second semiconductor layer 320 may be disposed in the light emitting portion AP of the light emitting device 300. The second semiconductor layer 320 may be disposed on the second portion of the first semiconductor layer 310, and may be disposed on the first semiconductor layer 310 with the active layer 330 interposed therebetween. The second semiconductor layer 320 may be a p-type semiconductor. In the case where the light emitting device 300 emits light of a blue wavelength or a green wavelength, the second semiconductor layer 320 may include a semiconductor material, i.e., Al x Ga yIn 1-x-y N (where 0≤x≤1, 0≤y≤1 and 0≤x+y≤1). For example, the second semiconductor layer 320 may include at least one of AlGaInN, GaN, AlGaN, InGaN, AlN and InN doped with a p-type dopant. The second semiconductor layer 320 may be doped with a p-type dopant, and the p-type dopant may be, for example, Mg, Zn, Ca or Ba. In one embodiment, the second semiconductor layer 320 may be p-GaN doped with p-type Mg. The second semiconductor layer 320 may have a thickness of 0.05 μm to 0.10 μm, but the present disclosure is not limited thereto.

[0167] The first semiconductor layer 310 and the second semiconductor layer 320 are shown as being formed as a single layer, but the present disclosure is not limited thereto. Optionally, in some embodiments, depending on the material of the active layer 330, each of the first semiconductor layer 310 and the second semiconductor layer 320 may include more than one layer, such as, for example, a cladding layer or a tensile strain barrier reduction (TSBR) layer.

[0168] The active layer 330 is disposed between the first semiconductor layer 310 and the second semiconductor layer 320. The active layer 330 may be disposed on the second portion of the first semiconductor layer 310 between the first semiconductor layer 310 and the second semiconductor layer 320 in the light emitting portion AP. The active layer 330 may include a quantum layer, and thus may be capable of emitting light of a specific wavelength band. The wavelength of light emitted by the active layer 330 may vary according to the content of the material of the quantum layer. The content of the material of the quantum layer may vary depending on the lattice constant of the first semiconductor layer 310 on which the active layer 330 is disposed. The lattice constant of the first semiconductor layer 310 may vary depending on the material, diameter, or shape of the first semiconductor layer 310.

[0169] The active layer 330 may include a single quantum well or a multi-quantum well structure material. In the case where the active layer 330 includes a material having a multi-quantum well structure, the active layer 330 may have a structure in which multiple quantum layers and multiple well layers are alternately stacked. The active layer 330 may emit light by combining electron-hole pairs according to an electrical signal applied thereto via the first semiconductor layer 310 and the second semiconductor layer 320. For example, in the case where the active layer 330 emits light of a blue wavelength, the quantum layer may include a material such as AlGaN or AlGaInN. Specifically, in the case where the active layer 330 has a multi-quantum well structure in which multiple quantum layers and multiple well layers are alternately stacked, the quantum layer may include a material such as AlGaN or AlGaInN, and the well layer may include a material such as GaN or AlInN. In one embodiment, in the case where the active layer 330 includes AlGaInN as its (multiple) quantum layers and includes AlInN as its (multiple) well layers, the active layer 330 may emit blue light having a central wavelength range of 450nm to 495nm.

[0170] However, the present disclosure is not limited thereto. Optionally, the active layer 330 may be in a structure in which a semiconductor material having a large energy band gap and a semiconductor material having a small energy band gap are alternately stacked, or may include a group III or group V semiconductor material depending on the wavelength of the light to be emitted. The type of light emitted by the active layer 330 is not particularly limited. The active layer 330 may emit light in a red or green wavelength range instead of blue light as needed. The active layer 330 may have a thickness of 0.05 μm to 0.10 μm, but the present disclosure is not limited thereto.

[0171] Light may be emitted not only in the direction of the height HD from the circumferential surface of the light emitting device 300 but also from both sides of the light emitting device 300. Directivity of light emitted from the active layer 330 is not particularly limited.

[0172] The electrode layer 370 may be an ohmic contact electrode, but the present disclosure is not limited thereto. Alternatively, the electrode layer 370 may be a Schottky contact electrode. The light emitting device 300 may include at least one electrode layer 370 . Figure 5 and Figure 6 The light emitting device 300 is shown to include one electrode layer 370, but the present disclosure is not limited thereto. Optionally, the light emitting device 300 may include more than one electrode layer 370, or may not be provided with the electrode layer 370. However, the following description of the light emitting device 300 may also be directly applicable to a light emitting device having more than one electrode layer 370 or having the same electrode layer as the light emitting device 300. Figure 5 and Figure 6 The light-emitting devices 300 have different structures.

[0173] The electrode layer 370 may be disposed on the second semiconductor layer 320. For example, the electrode layer 370 may be directly disposed on the second semiconductor layer 320. The electrode layer 370 may have substantially the same shape as the second semiconductor layer 320.

[0174] When the light emitting device 300 is electrically connected to the second electrode 220 (or the second contact electrode 262), the electrode layer 370 can reduce the resistance between the light emitting device 300 and the second electrode 220 (or the second contact electrode 262). The electrode layer 370 may include a conductive metal or a metal oxide. For example, the electrode layer 370 may include at least one of Al, Ti, In, Au, Ag, ITO, IZO, and ITZO. In addition, the electrode layer 370 may include a semiconductor material doped with an n-type or p-type dopant. The electrode layer 370 may include the same material or different materials, but the present disclosure is not limited thereto.

[0175] The insulating film 380 may be provided to surround a portion of the semiconductor layer of the light emitting device 300. The insulating film 380 may protect the semiconductor layer of the light emitting device 300, specifically the active layer 330. As described above, the light emitting device 300 may be electrically connected to the first electrode 210 and the second electrode 220, and the outer surface of the light emitting device 300 may directly contact other layers, such as the first insulating layer 510 and the contact electrodes 261 and 262.

[0176] The insulating film 380 may be provided to expose at least a portion of the outer surface of the semiconductor layer of the light emitting device 300. For example, the insulating film 380 may be provided on both surfaces of the body portion BP in the direction of the width WD. As described above, since the body portion BP and the light emitting portion AP have the same width (i.e., width WD), the insulating film 380 may form a flat surface on each of the first surface and the second surface of the light emitting device 300 in the direction of the width WD. The insulating film 380 may be provided to surround the side of the semiconductor layer corresponding to the light emitting portion AP of the light emitting device 300, but may expose the top surface of the light emitting portion AP, such as the top surface of the electrode layer 370 or the second semiconductor layer 320. However, the insulating film 380 may not be provided on the top surface and the side of each of the first end portion and the second end portion of the body portion BP. A portion of the top surface and the side of the first portion of the first semiconductor layer 310 corresponding to the body portion BP may be exposed.

[0177] Therefore, the semiconductor layer of the light emitting device 300 may be exposed in a portion of the light emitting device 300 in which the insulating film 380 is not provided (i.e., on the bottom surface of the body portion BP, the top surface and the side portion of each of the first end portion and the second end portion of the body portion BP, and the top surface of the light emitting portion AP). The exposed semiconductor layer of the light emitting device 300 may be in direct contact with the electrodes 210 and 220 or the contact electrodes 261 and 262 of the display device 10, and thus may receive an electrical signal from the electrodes 210 and 220 or the contact electrodes 261 and 262. For example, the first semiconductor layer 310 exposed in the first end portion and the second end portion of the light emitting device 300 may be in contact with the first contact electrode 261, and the electrode layer 370 exposed in the light emitting portion AP of the light emitting device 300 (i.e., in the third end portion of the light emitting device 300) may be in contact with the second contact electrode 262. However, the present disclosure is not limited to this example.

[0178] The insulating film 380 may have a thickness of 10 nm to 1.0 μm, but the present disclosure is not limited thereto. Preferably, the insulating film 380 may have a thickness of about 40 nm.

[0179] The insulating film 380 may include, for example, SiO x 、SiN x 、SiO x N y 、AlN、Al 2 O 3 The insulating film 380 may be a material having insulating properties such as an organic insulating material. The insulating film 380 may prevent any short circuit that may occur when the active layer 330 is placed in direct contact with an electrode that directly transmits an electrical signal to the light emitting device 300. In addition, since the insulating film 380 covers the active layer 330 to protect the outer surface of the light emitting device 300, any degradation in the emission efficiency of the light emitting device 300 may be prevented.

[0180] In addition, in some embodiments, the outer surface of the insulating film 380 may be surface treated. During the manufacture of the display device 10, the light emitting device 300 may be sprayed on the electrode while being dispersed in a predetermined ink. Here, the surface of the insulating film 380 may be hydrophobic or hydrophilic to keep the light emitting device 300 dispersed in the ink without agglomerating with other light emitting devices 300. However, the present disclosure is not limited thereto.

[0181] The light emitting device 300 may be manufactured by an epitaxial growth method of growing crystals for forming the above-mentioned semiconductor layer on a wafer substrate. Since the light emitting device 300 includes a body portion BP and a light emitting portion AP, and has an angled corner in which the side portions intersect, the area of ​​the active layer 330 per unit area of ​​the wafer substrate may be increased. That is, the manufacturing efficiency of the light emitting device 300 may be improved.

[0182] Figure 7 is a schematic diagram showing a layout of a light emitting device on a wafer substrate according to an embodiment of the present disclosure.

[0183] refer to Figure 7 , the light emitting devices 300 may be manufactured on a wafer substrate to be spaced apart from each other by a predetermined distance. The light emitting device 300 may have a width WD and a length LD, and a length LA of the light emitting portion AP of the light emitting device 300 may be determined. The length LA and the width WD of the light emitting portion AP may be the same as the length and width of the active layer 330 of the light emitting device 300. Once the distance ( Figure 7 'S1' and 'S2'), the area of ​​the active layer 330 of the light emitting device 300 per unit area may be expressed by Formula 1.

[0184] [Formula 1]

[0185] (LA×WD) / [(LD+S1)×(WD+S2)]

[0186] Among them, LA, WD and LD have been described above, S1 indicates the distance between the light emitting devices 300 in the direction of the length LD or LA, and S2 indicates the distance between the light emitting devices 300 in the direction of the width WD. When the light emitting device 300 extends in one direction and the height HD of the light emitting device 300 is less than the length LD and LA of the light emitting device 300, the size of the active layer 330 may increase, and the area of ​​the active layer 330 per unit area may also increase.

[0187] As described above, each of the light emitting devices 300 may include a body portion BP and a light emitting portion AP, and the light emitting portion AP may protrude from the body portion BP. In the case where the direction in which the light emitting portion AP of the light emitting device 300 faces relative to the body portion BP of the light emitting device 300 is referred to as an alignment direction, the light emitting devices 300 disposed between the first electrode line 210A and the second electrode line 210B may be classified according to the alignment direction of the light emitting device 300.

[0188] Figure 8 is a perspective view illustrating an alignment direction of a light emitting device according to an embodiment of the present disclosure.

[0189] refer to Figure 8, the display device 10 may include light emitting devices 300A, 300B, and 300C, which are different from each other in the direction in which the third end portion or light emitting portion AP of the light emitting device 300 faces. The light emitting device 300 may include a first light emitting device 300A whose light emitting portion AP faces the upward direction of the first substrate 101, and a second light emitting device 300B and a third light emitting device 300C whose light emitting portions AP face the second direction DR2. The second light emitting device 300B and the third light emitting device 300C may be arranged so that their light emitting portions AP face a direction parallel to the direction in which the first electrode 210 extends. The light emitting portion AP of the second light emitting device 300B may be aligned in one direction in the second direction DR2, and the light emitting portion AP of the third light emitting device 300C may be aligned in another direction in the second direction DR2.

[0190] During the manufacture of the display device 10, the light emitting device 300 may be ejected onto the first electrode 210 in a state dispersed in ink. In response to an alignment signal applied to the first electrode line 210A and the second electrode line 210B, an electric field may be generated on the first electrode 210. The light emitting device 300 dispersed in the ink may receive a dielectrophoretic force from the electric field, and thus may be arranged between the first electrode line 210A and the second electrode line 210B with their positions and alignment directions continuously changing. Each of the light emitting devices 300 may include a main body portion BP having a large length LD and a light emitting portion AP having a length LA shorter than the main body portion BP, and the light emitting portions AP of the light emitting devices 300 may have different alignment directions. As is clear from the first light emitting device 300A, the second light emitting device 300B, and the third light emitting device 300C, the main body portion BP (which occupies most of the light emitting device 300) may be directly disposed on the first electrode line 210A and the second electrode line 210B. When the light emitting portion AP of the light emitting device 300 is disposed to face the second direction DR2 or the upward direction of the first substrate 101 , light generated by the active layer 330 of the light emitting device 300 may be emitted in various directions.

[0191] The first end portion and the second end portion of each of the body portions BP of the first light emitting device 300A, the second light emitting device 300B, and the third light emitting device 300C may be disposed on the first electrode 210, and may contact the first electrode 210 at different positions. The bottom surface of the first end portion and the second end portion of the first light emitting device 300A (specifically, the sub-semiconductor layer 390 of the light emitting device 300) may be directly disposed on the first electrode line 210A and the second electrode line 210B. In contrast, the surface of the first end portion and the second end portion of each of the second light emitting device 300B and the third light emitting device 300C (specifically, the insulating film 380 of the light emitting device 300) may be directly disposed on the first electrode line 210A and the second electrode line 210B.

[0192] When the first semiconductor layer 310 of the light emitting device 300 is exposed in the first end portion and the second end portion of each of the light emitting devices 300, the first contact electrode 261 provided on the first end portion and the second end portion of each of the light emitting devices 300 and the first electrode 210 may directly contact the exposed first semiconductor layer 310 on the side of the first end portion and the second end portion of each of the light emitting devices 300. The first contact electrode 261 may be provided to extend in the second direction DR2, and may surround the first end portion and the second end portion of each of the light emitting devices 300. Therefore, the first contact electrode 261 may directly contact the top surface and the side of the first semiconductor layer 310 exposed in the first end portion and the second end portion of each of the light emitting devices 300.

[0193] In addition, the distance DC between the first pattern 261A and the second pattern 261B of the first contact electrode 261 may be smaller than the distance DE between the first electrode line 210A and the second electrode line 210B. When the first contact electrode 261 is disposed to surround the first end portion and the second end portion of each of the light emitting devices 300, at least a portion of the first contact electrode 261 may be directly disposed on the first planarization layer 109. However, since the distance DC between the first pattern 261A and the second pattern 261B is greater than the length LA of the light emitting portion AP of the light emitting device 300, the first pattern 261A and the second pattern 261B may not contact the light emitting portion AP of the light emitting device 300.

[0194] Fig. 9 It is along Figure 2 A cross-sectional view taken along line VIII-VIII'. Fig. 9 The layout of the first contact electrode 261 and the second contact electrode 262 with respect to the second light emitting device 300B or the third light emitting device 300C is shown.

[0195] refer to Fig. 9 And further reference Figure 3and Figure 5 , the first end portion and the second end portion of the light emitting device 300 may respectively contact the first pattern 261A and the second pattern 261B of the first contact electrode 261. The first semiconductor layer 310 may be exposed on the top surface and the side of each of the first end portion and the second end portion, and the first pattern 261A and the second pattern 261B may directly contact the exposed first semiconductor layer 310.

[0196] Here, when the first contact electrode 261 is disposed to extend in the second direction DR2, the first contact electrode 261 may contact both the top surface and the side of the exposed first semiconductor layer 310 regardless of the alignment direction of the light emitting device 300 disposed between the first electrode line 210A and the second electrode line 210B. Figure 3 As shown in , in the case where the light emitting device 300 is the first light emitting device 300A, among the surfaces of the first contact electrode 261 that contact the first end portion and the second end portion of the light emitting device 300, the surface of the first contact electrode 261 that contacts the top surface of the exposed first semiconductor layer 310 may be parallel to the top surface of the first substrate 101. On the contrary, in the case where the light emitting device 300 is the second light emitting device 300B or the third light emitting device 300C, as shown in Figure 8 As shown in FIG, among the surfaces of the first contact electrode 261 contacting the first end portion and the second end portion of the light emitting device 300, the surface of the first contact electrode 261 contacting the top surface of the exposed first semiconductor layer 310 may be perpendicular to the top surface of the first substrate 101. The surface of the first contact electrode 261 contacting the side of the first end portion and the second end portion of each of the first light emitting device 300A, the second light emitting device 300B, and the third light emitting device 300C may be formed to be perpendicular to the top surface of the first substrate 101.

[0197] Fig.10 It is along Figure 2 A cross-sectional view taken along line IX-IX'. Fig.10 The first end portion and the second end portion of each of the first light emitting device 300A, the second light emitting device 300B and the third light emitting device 300C in contact with the first contact electrode 261 are shown, specifically, the side portion of the first semiconductor layer 310 and the side portion of the sub-semiconductor layer 390 in each of the first light emitting device 300A, the second light emitting device 300B and the third light emitting device 300C.

[0198] refer to Fig.10 And further reference Figure 3 and Fig. 9, at least one of the first end portion and the second end portion of each of the first light emitting device 300A, the second light emitting device 300B, and the third light emitting device 300C may be surrounded by the first contact electrode 261. The first contact electrode 261 may contact not only the exposed first semiconductor layer 310 but also the insulating film 380. The contact surface of the first contact electrode 261 and the first semiconductor layer 310 exposed in the first end portion and the second end portion of each of the light emitting devices 300 may be increased. As a result, the contact resistance between the first contact electrode 261 and the first semiconductor layer 310 may be reduced.

[0199] Similarly, the second contact electrode 262 may be disposed to surround not only the third end portion but also a portion of the light emitting portion AP and the body portion BP of the light emitting device 300 .

[0200] Fig.11 It is along Figure 2 A cross-sectional view taken along line XX'. Fig.11 The third end portions of the first, second and third light emitting devices 300A, 300B and 300C that are in contact with the second contact electrode 262 are shown.

[0201] refer to Fig.11 And further reference Figure 3 and Fig. 9 , the first insulating layer 510 may include a hole ( Figure 3 The hole HP of the first insulating layer 510 may extend in the second direction DR2 to expose a portion of the middle portion of the light emitting device 300. In the case of the first light emitting device 300A, not only the top surface of the third end portion of the light emitting device 300 (i.e., the top surface of the electrode layer 370) but also the width ( Figure 5 The first surface and the second surface in the direction of "WD" (in the width ( WD")) may be exposed by the hole HP of the first insulating layer 510. In the case of the second light emitting device 300B and the third light emitting device 300C, not only the top surface of the electrode layer 370 of each of the light emitting devices 300, but also the width ( Figure 5 The first surface or the second surface in the second direction DR2 (“WD”) and the bottom surface may be exposed through the hole HP of the first insulating layer 510. When the second contact electrode 262 is disposed in the hole HP and extends in the second direction DR2, the second contact electrode 262 may surround a portion of the first light emitting device 300A, the second light emitting device 300B, and the third light emitting device 300C.

[0202] In one embodiment, the second contact electrode 262 may contact not only the light emitting portion AP or the third end portion of the light emitting device 300, but also a portion of the body portion BP of the light emitting device 300 directly connected to the light emitting portion AP of the light emitting device 300. The portion of the body portion BP contacting the second contact electrode 262 may be a portion of the body portion BP in which the insulating film 380 is disposed, specifically, a first surface and a second surface of each of the body portions BP in the direction of the width WD, and may be a bottom surface of the sub-semiconductor layer 390. For example, in the case of the first light emitting device 300A, not only the top surface of the electrode layer 370 of the first light emitting device 300A, but also the first surface and the second surface of the body portion BP of the first light emitting device 300A in the direction of the width WD may contact the second contact electrode 262. On the contrary, not only the top surface of the electrode layer 370 of the second light-emitting device 300B and the third light-emitting device 300C, but also the first surface or the second surface of each of the body parts BP of each of the second light-emitting device 300B and the third light-emitting device 300C in the direction of the width WD and the bottom surface of the sub-semiconductor layer 390 of the second light-emitting device 300B and the third light-emitting device 300C can be in contact with the second contact electrode 262.

[0203] The second contact electrode 262 in contact with the body portion BP may be in direct contact with the insulating film 380 or the sub-semiconductor layer 390 of each of the body portions BP, but not in direct contact with the first semiconductor layer 310. Depending on the alignment direction of the light emitting portion AP, the first light emitting device 300A, the second light emitting device 300B, and the third light emitting device 300C have different heights from the top surface of the first planarization layer 109 and thus form a height difference, and when the second contact electrode 262 is provided to have a uniform thickness along the height difference, the height from the first planarization layer 109 to the top surface of the second contact electrode 262 may vary.

[0204] The second contact electrode 262 may be in direct contact with the third end portion of the light emitting device 300 exposed by the hole HP, specifically, in direct contact with the top surface of the exposed electrode layer 370. In addition, the second contact electrode 262 may be in direct contact with the insulating film 380 and the sub-semiconductor layer 390 of each of the light emitting devices 300. Due to the presence of the first insulating layer 510, the second contact electrode 262 may not be in direct contact with the first contact electrode 261, and any short circuit between the first contact electrode 261 and the second contact electrode 262 may be prevented.

[0205] The light emitting device 300 may include a body portion BP and a light emitting portion AP having a different length from the body portion BP, and may protrude at least partially. The active layer 330 included in the light emitting portion AP may have a relatively large area, and the emission efficiency of the light emitting device 300 may be improved. In addition, the display device 10 may include a light emitting device 300 whose layout varies depending on the direction in which the light emitting portion AP faces. The first contact electrode 261 and the second contact electrode 262 may extend along the direction in which the light emitting device 300 is arranged, and may have a large contact area with the semiconductor layer of each of the light emitting devices 300, regardless of the alignment direction of the light emitting device 300. As a result, the contact resistance between the contact electrodes 261 and 262 and the light emitting device 300 may be reduced.

[0206] Hereinafter, various embodiments of the light emitting device 300 and the display apparatus 10 will be described.

[0207] Fig.12 is a cross-sectional view of a light emitting device according to an embodiment of the present disclosure. Fig.13 Yes Fig.12 A cross-sectional view of a display device of a light-emitting device.

[0208] refer to Fig.12 and Fig.13 The first semiconductor layer 310_1 of the light emitting device 300_1 may include a plurality of layers. The first semiconductor layer 310_1 may include a first layer 310A, a second layer 310B, and a third layer 310C, and the first layer 310A, the second layer 310B, and the third layer 310C may be sequentially arranged along a direction in which the semiconductor layers are stacked. Fig.12 and Fig.13 The light emitting device 300_1 and the display device 10_1 are Figure 3 and Figure 5 The difference between the first semiconductor layer 310_1 and its corresponding counterpart is that the first semiconductor layer 310_1 includes multiple layers. Figure 3 and Figure 5 to describe the differences in the implementation methods of Fig.12 and Fig.13 implementation method.

[0209] The first semiconductor layer 310_1 of the light emitting device 300_1 may be doped with an n-type dopant to form an n-type semiconductor layer. The first semiconductor layer 310_1 may include a plurality of layers having different n-type dopant doping concentrations or carrier concentrations, such as a first layer 310A, a second layer 310B, and a third layer 310C. The first layer 310A may include a portion corresponding to a first portion of the first semiconductor layer 310_1 (which corresponds to the main body portion BP of the light emitting device 300_1), and the first layer 310A may also include another portion protruding from a portion of the top surface of the portion corresponding to the first portion of the first semiconductor layer 310_1 to form a second portion of the first semiconductor layer 310_1. The active layer 330 may be disposed on the protruding portion of the first layer 310A. The second layer 310B and the third layer 310C may be disposed in the first portion of the first semiconductor layer 310_1.

[0210] In some embodiments, the carrier concentration of the first semiconductor layer 310_1 may gradually decrease from the first layer 310A to the third layer 310C. That is, the carrier concentration of the third layer 310C may be lower than the carrier concentration of the first layer 310A and the second layer 310B, and the carrier concentration of the second layer 310B may be lower than the carrier concentration of the first layer 310A. However, the present disclosure is not limited thereto. The higher the carrier concentration of the first semiconductor layer 310_1, the lower the resistance of the first semiconductor layer 310_1. Since the first semiconductor layer 310_1 includes a plurality of layers 310A, 310B, and 310B, the carrier concentration of the light emitting device 300_1 may increase from the sub-semiconductor layer 390 to the active layer 330, and the resistance of the light emitting device 300_1 may decrease from the sub-semiconductor layer 390 to the active layer 330. The device efficiency of the light emitting device 300_1 may be further improved.

[0211] Fig.14 is a plan view of a sub-pixel of a display device according to another embodiment of the present disclosure. Fig.15 It is along Fig.14 A cross-sectional view taken along line Q1-Q1'.

[0212] refer to Fig.14 and Fig.15 , the display device 10_2 may include a first electrode 210_2 and a second insulating layer 520_2 disposed on the entire surface of the first planarization layer 109. The first contact electrode 261_2 may be directly disposed on the second insulating layer 520_2 and may directly contact the first electrode 210_2 exposed through the opening OP formed in the second insulating layer 520_2. Fig.14 and Fig.15 The display device 10_2 and Figure 2 and Figure 3The difference between the corresponding part of is that it also includes a second insulating layer 520_2. Figure 2 and Figure 3 to describe the differences in the implementation methods of Fig.14 and Fig.15 implementation method.

[0213] The display device 10_2 may further include a second insulating layer 520_2 disposed to cover the first electrode 210_2. The second insulating layer 520_2 may include substantially the same material as the first insulating layer 510_2, and thus may form another layer disposed to cover the first electrode 210_2 and the first planarization layer 109. When the second insulating layer 520_2 is disposed to cover the first electrode 210_2, the light emitting device 300 may be directly disposed on the second insulating layer 520_2. The second insulating layer 520_2 may prevent the light emitting device 300 from directly contacting the first electrode 210_2, and an electrical signal applied to the first electrode 210_2 may be transmitted to the light emitting device 300 through the first contact electrode 261_2.

[0214] An opening OP exposing a portion of the top surface of the first electrode 210_2 by penetrating the second insulating layer 520_2 may be formed in the second insulating layer 520_2. The opening OP may be formed at a position adjacent to the first electrode 210_2 (eg, Figure 2 The first contact electrode 261_2 may be formed to have a width greater than the opening OP, that is, a width W1_2, and thus cover the opening OP. When the width W1_2 of the first contact electrode 261_2 is greater than Figure 2 When the width W1 of the first contact electrode 261 is less than the width W1 of the second contact electrode 261, the width W1_2 of the first contact electrode 261_2 may be different from the width W2 of the second contact electrode 262. For example, the width W1_2 of the first contact electrode 261_2 may be greater than the width W2 of the second contact electrode 262. The first contact electrode 261_2 may have a relatively large width, that is, the width W1_2, and may cover the opening OP while maintaining the distance DC between the first pattern 261A and the second pattern 261B. The first contact electrode 261_2 (e.g., Figure 2 The first pattern 261A and the second pattern 261B) may be respectively connected to the first electrode 210_2 (eg, Figure 2 The first electrode line 210A and the second electrode line 210B are in contact with each other, and the light emitting device 300 may be electrically connected to the first electrode 210_2 through the first contact electrode 261_2.

[0215] Fig.16 is a plan view of a sub-pixel of a display device according to another embodiment of the present disclosure. Fig.17 It is along Fig.16 A cross-sectional view taken along line Q2-Q2'.

[0216] refer to Fig.16 and Fig.17 In the display device 10_3, the width W1_3 of the first contact electrode 261_3 may be greater than the width WE3 of the first electrode 210_3. The first contact electrode 261_3 (eg, Figure 2 The first pattern 261A and the second pattern 261B) may be arranged to cover the first electrode 210_3 (eg, Figure 2 The first contact electrode 261_3 may be in contact with a relatively large area of ​​the first electrode 210_3, and the contact resistance between the first contact electrode 261_3 and the first electrode 210_3 may be further reduced. Fig.16 and Fig.17 The display device 10_3 and Figure 2 and Figure 3 The difference between its corresponding portion is the width W1_3 of the first contact electrode 261_3, and description of other features of the display device 10_3 will be omitted.

[0217] Fig.18 is a plan view of a sub-pixel of a display device according to another embodiment of the present disclosure. Fig.19 It is along Fig.18 A cross-sectional view taken along line Q3-Q3'.

[0218] refer to Fig.18 and Fig.19 In the display device 10_4 of the display device 10_4 , the width W2_4 of the second contact electrode 262_4 of the display device 10_4 may be greater than the width W1_4 of the first contact electrode 261_4 . Fig.18 and Fig.19 The display device 10_4 and Figure 2 and Figure 3 The difference between the corresponding part of the second contact electrode 262_4 is the width W2_4 of the second contact electrode 262_4. Figure 2 and Figure 3 to describe the differences in the implementation methods of Fig.18 and Fig.19 implementation method.

[0219] The second contact electrode 262_4 of the display device 10_4 may be disposed in the hole HP of the first insulating layer 510_4 to surround the third end portion of the light emitting device 300. The portion of the second contact electrode 262_4 that substantially contacts the semiconductor layer of each of the light emitting devices 300 may be a portion of the surface of the second contact electrode 262_4 that contacts the electrode layer 370 exposed on the top surface of the light emitting portion AP of the light emitting device 300. The first contact electrode 261_4 may contact the top surface and the side of each of the first and second end portions of each of the light emitting devices 300, and thus may contact a relatively large area of ​​the exposed first semiconductor layer 310 of each of the light emitting devices 300. The second contact electrode 262_4 of the display device 10_4 may be formed to have a greater width than the first contact electrode 261_4, and may contact a relatively large area of ​​the top surface of the light emitting portion AP of each of the light emitting devices 300, that is, the electrode layer 370 or the second semiconductor layer 320 of each of the light emitting devices 300. Therefore, the contact resistance between the second contact electrode 262_4 and the light emitting device 300 may be further reduced.

[0220] At the end of the detailed description, those skilled in the art will appreciate that many changes and modifications may be made to the preferred embodiment without departing from the principles of the invention in essence. Therefore, the preferred embodiments of the present invention disclosed are used only in an overview and descriptive sense, and not for a limiting purpose.

Claims

1. A display device, comprising: a first electrode including a first electrode line extending in a first direction, and a second electrode line extending in the first direction and spaced apart from the first electrode line in a second direction; a light emitting device, disposed between the first electrode line and the second electrode line; a first contact electrode extending in the first direction and including a first pattern and a second pattern, the first pattern being arranged to overlap with one end portion of each of the first electrode line and the light emitting device, and the second pattern being arranged to overlap with the other end portion of each of the second electrode line and the light emitting device; a second electrode disposed on the light emitting device to at least partially overlap the first electrode and the light emitting device; as well as a second contact electrode extending in the first direction and disposed between the light emitting device and the second electrode, Among them, the light-emitting devices are light-emitting devices each including multiple semiconductor layers and an insulating film surrounding a portion of the outer surface of the multiple semiconductor layers, and the light-emitting devices include a main body portion extending in the second direction, and a light-emitting portion arranged on the main body portion and having a smaller length than the main body portion in the second direction.

2. The display device according to claim 1, wherein: The light emitting device includes a first light emitting device and a second light emitting device, the light emitting portion of the first light emitting device is disposed to face the second electrode, and the light emitting portion of the second light emitting device is disposed to face the first direction.

3. The display device according to claim 2, wherein: Each of the body portions of the light emitting device includes a first end portion and a second end portion in the second direction, The first pattern of the first contact electrode is arranged to overlap the first electrode line and the first end portion, and The second pattern of the first contact electrode is disposed to overlap the second electrode line and the second end portion.

4. The display device according to claim 3, wherein: The distance between the first electrode line and the second electrode line is smaller than the length of the main body portion in the second direction, and The length of the body portion in the second direction is greater than a distance between the first pattern and the second pattern in the second direction.

5. The display device according to claim 3, wherein: The first pattern is disposed to surround at least a portion of the first end portion but not to contact the light emitting portion of the light emitting device, and The second pattern is disposed to surround at least a portion of the second end portion but not to contact the light emitting portion of the light emitting device.

6. The display device according to claim 2, wherein: The second contact electrode is in contact with the light emitting portion of the light emitting device and the second electrode.

7. The display device according to claim 2, wherein: The widths of the first electrode lines and the second electrode lines are smaller than the width of the second electrode.

8. A display device, comprising: substrate; a first electrode disposed on the substrate and comprising a first electrode line and a second electrode line disposed to be spaced apart from each other; a light emitting device, disposed between the first electrode line and the second electrode line; a first contact electrode including a first pattern and a second pattern, wherein the first pattern is disposed on at least a portion of the first electrode line and the light emitting device, and the second pattern is disposed on at least another portion of the second electrode line and the light emitting device; a second contact electrode, disposed on the light emitting device between the first pattern and the second pattern; as well as a second electrode, disposed on the second contact electrode, in, The light emitting device includes a main body portion extending in one direction and a light emitting portion having a smaller length than the main body portion in the one direction, The first pattern of the first contact electrode is disposed on a first end portion of the body portion, The second pattern of the first contact electrode is disposed on a second end portion of the body portion, and The second contact electrode is provided on the light emitting portion.

9. The display device according to claim 8, wherein: The first pattern of the first contact electrode contacts a top surface and a side of the first end portion of the light emitting device, and The second pattern of the first contact electrode makes contact with a top surface and a side of the second end portion of the light emitting device.

10. The display device according to claim 9, wherein: The second contact electrode contacts a top surface and a side of the light emitting portion.

11. The display device according to claim 10, wherein: The second contact electrode is in contact with portions directly connected to the light emitting portion.

12. The display device according to claim 8, wherein: Each of the light emitting devices includes a plurality of semiconductor layers and an insulating film surrounding portions of outer surfaces of the plurality of semiconductor layers, and The insulating film is provided to surround the body portion and the side of the light emitting portion, but is not provided on a portion of the body portion on which the light emitting portion is not provided, among the side and the top surface of the body portion.

13. The display device according to claim 12, wherein: The light emitting device includes a first light emitting device, the light emitting portion of the first light emitting device is disposed to face an upward direction of the substrate, and a second light emitting device, the light emitting portion of the second light emitting device is disposed to face a direction parallel to a top surface of the substrate.

14. The display device according to claim 13, wherein: In the first end portion of the light emitting device, a portion of a top surface and a side portion of the plurality of semiconductor layers of each of the light emitting devices in which the insulating film is not provided is exposed, and A surface of the first light emitting device contacting the first pattern and a top surface of the first end portion are parallel to the top surface of the substrate.

15. The display device according to claim 14, wherein: A surface of the second light emitting device contacting the first pattern and the top surface of the first end portion are perpendicular to the top surface of the substrate.

16. A light emitting device comprising: a plurality of semiconductor layers; as well as an insulating film surrounding portions of outer surfaces of the plurality of semiconductor layers; in, The plurality of semiconductor layers include a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer along a first direction, and an active layer disposed between the first semiconductor layer and the second semiconductor layer along the first direction, The light emitting device includes a main body portion extending in one direction, and a light emitting portion provided on the main body portion and having a smaller length than the main body portion in the one direction, The active layer is provided in the light emitting portion, and The active layer does not overlap with the insulating film along the first direction.

17. The light emitting device according to claim 16, further comprising: A sub-semiconductor layer, disposed below the first semiconductor layer; as well as The electrode layer is arranged on the second semiconductor layer.

18. The light emitting device according to claim 17, wherein: The first semiconductor layer includes a first portion disposed in the body portion and a second portion protruding from a portion of a top surface of the first portion, and The active layer is disposed on the second portion of the first semiconductor layer.

19. The light emitting device according to claim 16, wherein: The width of the main body portion is the same as the width of the light emitting portion, and A sum of heights of the main body portion and the light emitting portion is smaller than the length of the main body portion in the one direction.

20. The light emitting device according to claim 19, wherein: The insulating film is provided on both surfaces of the body portion in the direction of the width to surround the side of the light emitting portion, and the insulating film is not provided on a portion of the top surface of the body portion on which the light emitting portion is not provided.

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