Quantum dot light-emitting device and manufacturing method thereof, and display device

Abstract

The disclosed embodiments disclose a quantum dot light-emitting device and a method for manufacturing the same, and a display device, comprising: coating a quantum dot solution on a substrate; the quantum dots include a quantum dot body and a first cross-linkable ligand connected to the surface of the quantum dot body; when the quantum dots are in a solution state, the first cross-linkable ligand is in a de-cross-linked state; at a first temperature, the first cross-linkable ligand of the quantum dots undergoes a cross-linking reaction; a region to be removed of quantum dots after the cross-linking reaction is irradiated with laser, and the quantum dots in the region to be removed are de-cross-linked at a second temperature generated by the laser irradiation; the difference between the second temperature and the first temperature is greater than a preset value; and the quantum dots in the region to be removed are removed to form a patterned quantum dot layer.

Description

Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to a quantum dot light-emitting device and a manufacturing method thereof, and a display device. Background Art

[0002] With the in-depth development of quantum dot preparation technology, the stability and luminous efficiency of quantum dots are constantly improving, and the research on quantum dot electroluminescent diodes (QLED) is constantly deepening. The application prospects of QLED in the display field are becoming brighter and brighter. However, the production efficiency of QLED has not yet reached the level of mass production. The most important reason is that there has been no breakthrough in the high-resolution patterning technology of QLED. The inorganic nanoparticle characteristics of quantum dots make it impossible to form films and pattern them through evaporation.

[0003] The existing technology generally produces patterned quantum dots through inkjet printing, but it is difficult to achieve a high resolution using this method. Summary of the invention

[0004] The present disclosure provides a method for manufacturing a quantum dot light-emitting device, comprising:

[0005] A quantum dot solution is coated on a substrate; the quantum dot comprises a quantum dot body and a first cross-linkable ligand connected to the surface of the quantum dot body; when the quantum dot is in a solution state, the first cross-linkable ligand is in a de-cross-linked state;

[0006] At a first temperature, the first cross-linkable ligand of the quantum dot undergoes a cross-linking reaction;

[0007] The quantum dots in the to-be-removed region undergo a cross-linking reaction by laser irradiation, and the quantum dots in the to-be-removed region decrosslink at a second temperature generated by the laser irradiation; the difference between the second temperature and the first temperature is greater than a preset value;

[0008] The quantum dots in the area to be removed are removed to form a patterned quantum dot layer.

[0009] Optionally, in the above-mentioned manufacturing method provided by the embodiment of the present disclosure, before coating the quantum dot solution on the substrate, the method further comprises: forming the substrate;

[0010] The forming of the substrate comprises:

[0011] A first electrode and a carrier film layer are sequentially formed on a substrate; wherein the surface of the carrier film layer has no cross-linking ligands;

[0012] The first cross-linkable ligand of the quantum dot undergoes a cross-linking reaction at the first temperature, specifically:

[0013] A cross-linking reaction occurs between the first cross-linkable ligands corresponding to adjacent quantum dots.

[0014] Optionally, in the above-mentioned manufacturing method provided by the embodiment of the present disclosure, the first cross-linkable ligand includes: a coordination group that coordinates and binds to the quantum dot body, a first connecting group connected to the coordination group, and a first cross-linkable group connected to the first connecting group;

[0015] A cross-linking reaction occurs between the first cross-linkable groups.

[0016] Optionally, in the above-mentioned preparation method provided by the embodiment of the present disclosure, the first cross-linkable group includes at least one of the following: cyclopentadiene, cyclopentadiene derivatives, dicyclopentadiene, dicyclopentadiene derivatives, bisphenol p-amino lactone; or,

[0017] The first cross-linkable group corresponding to at least one of the quantum dots includes a first group and a second group; wherein,

[0018] The first group is maleimide, and the second group is furan; or,

[0019] The first group is maleic anhydride or a derivative thereof, and the second group is a polyol; or

[0020] The first group is maleimide, and the second group is furfuryl ester.

[0021] Optionally, in the above-mentioned manufacturing method provided by the embodiment of the present disclosure, the molar number of the first group and the second group corresponding to at least one of the quantum dots is the same.

[0022] Optionally, in the above-mentioned manufacturing method provided by the embodiment of the present disclosure, before coating the quantum dot solution on the substrate, the method further comprises: forming the substrate;

[0023] The forming of the substrate comprises:

[0024] A first electrode and a carrier film layer are sequentially formed on a substrate; wherein a second cross-linkable ligand is connected to a surface of the carrier film layer;

[0025] The first cross-linkable ligand of the quantum dot undergoes a cross-linking reaction at the first temperature, specifically:

[0026] At the first temperature, the first cross-linkable ligand of the quantum dot undergoes a cross-linking reaction with the second cross-linkable ligand; or, while the first cross-linkable ligand of the quantum dot undergoes a cross-linking reaction with the second cross-linkable ligand, a cross-linking reaction occurs between the first cross-linkable ligands corresponding to adjacent quantum dots.

[0027] Optionally, in the above-mentioned manufacturing method provided in the embodiment of the present disclosure, the first cross-linkable ligand includes: a coordinating group that is coordinated with the quantum dot body, a first connecting group connected to the coordinating group, and a first cross-linkable group connected to the first connecting group; the second cross-linkable ligand includes: a second connecting group connected to the surface of the carrier film layer, and a second cross-linkable group connected to the second connecting group.

[0028] Optionally, in the above-mentioned preparation method provided by the embodiment of the present disclosure, both the first cross-linkable group and the second cross-linkable group are cyclopentadiene or its derivatives; or,

[0029] The first crosslinkable group and the second crosslinkable group are both dicyclopentadiene or a derivative thereof; or,

[0030] The first cross-linkable group and the second cross-linkable group are both bisphenol p-amino lactone; or,

[0031] One of the first crosslinkable group and the second crosslinkable group is maleimide, and the other is furan; or

[0032] One of the first crosslinkable group and the second crosslinkable group is maleic anhydride or a derivative thereof, and the other is a polyol; or

[0033] Among the first crosslinkable group and the second crosslinkable group, one is maleimide, and the other is furfuryl ester.

[0034] Optionally, in the above-mentioned manufacturing method provided in the embodiment of the present disclosure, the carrier film layer is an electron transport layer, and the structure of the second connecting group is Wherein, * is the position for connecting the second cross-linkable group, ** is the position for connecting other groups, and *** is the position for connecting with the electron transport layer.

[0035] Optionally, in the above-mentioned preparation method provided in the embodiment of the present disclosure, the coordination group includes at least one of -NH2, -SH, -COOH, -P, -PO2, and the first connecting group is -(CH2) n -, n=2~6.

[0036] Optionally, in the above-mentioned manufacturing method provided in the embodiment of the present disclosure, removing the quantum dots in the area to be removed specifically includes:

[0037] The quantum dots irradiated by the laser are cleaned with a solvent, wherein the quantum dots in the area to be removed are dissolved in the solvent, and the quantum dots that undergo cross-linking reaction are not dissolved in the solvent.

[0038] Optionally, in the above-mentioned manufacturing method provided in the embodiment of the present disclosure, the wavelength of the laser irradiation is 800-1650nm, and the power density of the laser irradiation is 1-10W / cm 2 .

[0039] Optionally, in the above-mentioned manufacturing method provided in the embodiment of the present disclosure, a quantum dot solution is coated on the substrate, and when the quantum dots are in a solution state, the first cross-linkable ligand is in a de-cross-linked state, specifically:

[0040] The quantum dot solution is coated after the substrate is heated to the second temperature.

[0041] Correspondingly, an embodiment of the present disclosure also provides a quantum dot light-emitting device, comprising a substrate and a quantum dot layer patterned on the substrate, the quantum dots of the quantum dot layer comprising a quantum dot body and a first cross-linkable ligand connected to the surface of the quantum dot body; the quantum dot layer is a structure after the first cross-linkable ligand undergoes a cross-linking reaction at a first temperature.

[0042] Optionally, in the quantum dot light-emitting device provided in the embodiment of the present disclosure, the first cross-linkable ligand includes: a coordination group that coordinates and binds to the quantum dot body, a first connecting group connected to the coordination group, and a first cross-linkable group connected to the first connecting group;

[0043] The quantum dot layer is a structure formed after a cross-linking reaction occurs between first cross-linkable groups corresponding to adjacent quantum dots.

[0044] Optionally, in the quantum dot light-emitting device provided in the embodiment of the present disclosure, the first cross-linkable group includes at least one of the following: cyclopentadiene, cyclopentadiene derivatives, dicyclopentadiene, dicyclopentadiene derivatives, bisphenol p-amino lactone; or,

[0045] The first cross-linkable group corresponding to at least one of the quantum dots includes a first group and a second group; wherein,

[0046] The first group is maleimide, and the second group is furan; or,

[0047] The first group is maleic anhydride or a derivative thereof, and the second group is a polyol; or

[0048] The first group is maleimide, and the second group is furfuryl ester.

[0049] Optionally, in the quantum dot light-emitting device provided in the embodiment of the present disclosure, the molar number of the first group and the second group corresponding to at least one of the quantum dots is the same.

[0050] Optionally, in the quantum dot light-emitting device provided in the embodiment of the present disclosure, the substrate comprises: a substrate substrate, a first electrode located on the substrate substrate, and a carrier film layer located on the first electrode; the quantum dot layer is located on the carrier film layer, and a second cross-linkable ligand is connected to the surface of the carrier film layer;

[0051] The quantum dot layer is a structure formed after a cross-linking reaction occurs between the first cross-linkable ligand and the second cross-linkable ligand; or, the quantum dot layer is a structure formed after a cross-linking reaction occurs between the first cross-linkable ligand and the second cross-linkable ligand, and between the first cross-linkable ligands corresponding to adjacent quantum dots.

[0052] Optionally, in the above-mentioned quantum dot light-emitting device provided in the embodiment of the present disclosure, the first cross-linkable ligand includes: a coordinating group that is coordinated with the quantum dot body, a first connecting group connected to the coordinating group, and a first cross-linkable group connected to the first connecting group; the second cross-linkable ligand includes: a second connecting group connected to the surface of the carrier film layer, and a second cross-linkable group connected to the second connecting group.

[0053] Optionally, in the quantum dot light-emitting device provided in the embodiment of the present disclosure, both the first cross-linkable group and the second cross-linkable group are cyclopentadiene or its derivatives; or,

[0054] The first crosslinkable group and the second crosslinkable group are both dicyclopentadiene or a derivative thereof; or,

[0055] The first cross-linkable group and the second cross-linkable group are both bisphenol p-amino lactone; or,

[0056] One of the first crosslinkable group and the second crosslinkable group is maleimide, and the other is furan; or

[0057] One of the first crosslinkable group and the second crosslinkable group is maleic anhydride or a derivative thereof, and the other is a polyol; or

[0058] Among the first crosslinkable group and the second crosslinkable group, one is maleimide, and the other is furfuryl ester.

[0059] Optionally, in the quantum dot light-emitting device provided in the embodiment of the present disclosure, the carrier film layer is an electron transport layer, and the structure of the second connecting group is Wherein, * is the position for connecting the second cross-linkable group, ** is the position for connecting other groups, and *** is the position for connecting with the electron transport layer.

[0060] Optionally, in the quantum dot light-emitting device provided in the embodiment of the present disclosure, the coordination group includes at least one of -NH2, -SH, -COOH, -P, and -PO2, and the first connecting group is -(CH2) n -, n=2~6.

[0061] Correspondingly, an embodiment of the present disclosure further provides a display device, comprising the above-mentioned quantum dot light-emitting device. BRIEF DESCRIPTION OF THE DRAWINGS

[0062] Figure 1 A flow chart of a method for making a quantum dot light-emitting device provided in an embodiment of the present disclosure;

[0063] Figure 2A A schematic diagram of a quantum dot structure provided in an embodiment of the present disclosure;

[0064] Figure 2B for Figure 2A Schematic diagram of the corresponding specific structure of quantum dots;

[0065] Figure 3A Schematic diagram of the cross-linking reaction between quantum dots;

[0066] Figure 3B Schematic diagram of the cross-linking reaction between quantum dots and substrate;

[0067] Figure 4A-4F A schematic diagram of a method for manufacturing a quantum dot light-emitting device provided in an embodiment of the present disclosure after executing each step;

[0068] Figure 5 A schematic diagram of the principle of a cross-linking reaction between quantum dots provided in an embodiment of the present disclosure;

[0069] Figure 6 A schematic diagram of the principle of another cross-linking reaction between quantum dots provided in an embodiment of the present disclosure;

[0070] Figure 7A-7F A schematic diagram of another method for manufacturing a quantum dot light-emitting device provided in an embodiment of the present disclosure after executing each step;

[0071] Figure 8 A schematic diagram of the structure of a quantum dot light-emitting device provided in an embodiment of the present disclosure;

[0072] Fig. 9 A schematic diagram of the structure of another quantum dot light-emitting device provided in an embodiment of the present disclosure. DETAILED DESCRIPTION

[0073] In order to make the purpose, technical solution and advantages of the embodiments of the present disclosure clearer, the technical solution of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, not all of the embodiments. And in the absence of conflict, the embodiments in the present disclosure and the features in the embodiments can be combined with each other. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present disclosure.

[0074] Unless otherwise defined, the technical terms or scientific terms used in the present disclosure should be understood by people with ordinary skills in the field to which the present disclosure belongs. "Include" or "comprising" and other similar words used in the present disclosure mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connect" or "connected" and other similar words are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Inside", "outside", "upper", "lower", etc. are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0075] It should be noted that the sizes and shapes of the figures in the accompanying drawings do not reflect the actual proportions, and are only intended to illustrate the present disclosure. The same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions.

[0076] The present disclosure provides a method for manufacturing a quantum dot light-emitting device. Figure 1 As shown, including:

[0077] S101, coating a quantum dot solution on a substrate; the quantum dots include a quantum dot body and a first cross-linkable ligand connected to the surface of the quantum dot body; when the quantum dots are in a solution state, the first cross-linkable ligand is in a de-cross-linked state;

[0078] S102, at a first temperature, a first cross-linkable ligand of the quantum dot undergoes a cross-linking reaction;

[0079] S103, irradiating the region to be removed with laser light after the cross-linking reaction of the quantum dots, so that the quantum dots in the region to be removed are decrosslinked at a second temperature generated by the laser irradiation; the difference between the second temperature and the first temperature is greater than a preset value;

[0080] S104, removing the quantum dots in the area to be removed to form a patterned quantum dot layer.

[0081] Specifically, for quantum dots, their solubility in solvents is determined by the ligands on their surfaces. For example, originally quantum dots can be dissolved in solvents, such as non-polar solvents such as octane, but after the ligands undergo a cross-linking reaction to form a quantum dot cross-linking system, the solubility of the quantum dots in the original solvent decreases. In this way, quantum dots that have not formed a cross-linking system can still be dissolved in octane and thus washed away; quantum dots that have formed a cross-linking system are no longer soluble in octane, and thus remain in a specific position.

[0082] The method for manufacturing the above-mentioned quantum dot light-emitting device provided by the embodiment of the present disclosure is as follows: by coating a quantum dot solution in which the first cross-linkable ligand is in a de-cross-linked state on a substrate, at a first temperature, the first cross-linkable ligand of the quantum dots undergoes a cross-linking reaction, and the quantum dots undergoing the cross-linking reaction have a network structure, are relatively stable, and are difficult to dissolve in a solvent, and are retained on the substrate; then, a laser is used to irradiate the area to be removed of the quantum dots after the cross-linking reaction, and the quantum dots in the area to be removed are de-cross-linked at a second temperature generated by the laser irradiation. The de-cross-linked quantum dots can be dissolved in a solvent, so the quantum dots irradiated by the laser can be cleaned with a solvent to remove the quantum dots in the area to be removed, thereby forming a patterned quantum dot layer, that is, completing the patterning of the quantum dot layer; compared with the prior art, the present disclosure does not require inkjet printing or photolithography to complete the patterning of the quantum dot layer, and can form high-resolution, good-performance quantum dots.

[0083] Specifically, the difference between the second temperature and the first temperature is greater than a preset value, for example, the preset value is 120°C. In an exemplary embodiment, the first temperature is room temperature (such as 25°C), the second temperature is 170°C, and the difference between the second temperature and the first temperature is 155°C, which is greater than the preset value. The preset value can also be set to 130°C, 140°C, etc. according to process requirements. The first cross-linkable ligand of the quantum dot is very easy to undergo a cross-linking reaction to form a dimer at room temperature. At the same time, when it is irradiated with a laser (ie, heated), such as when the temperature is 170°C, the cross-linked quantum dots are very easy to depolymerize, thereby de-crosslinking. That is, the ligand of the quantum dot provided in the embodiment of the present disclosure adopts a first cross-linkable ligand containing a thermoreversible cross-linking system.

[0084] Specifically, Figure 2A As shown, the quantum dot includes a quantum dot body QD and a first cross-linkable ligand connected to the surface of the quantum dot body QD, the first cross-linkable ligand includes: a coordination group X that is coordinated with the quantum dot body QD, a first connecting group D1 connected to the coordination group X, and a first cross-linkable group Y connected to the first connecting group D1; at a first temperature, a cross-linking reaction can occur between the first cross-linkable groups.

[0085] In specific implementation, in the above-mentioned manufacturing method provided in the embodiment of the present disclosure, if Figure 2AAs shown, the coordination group X includes but is not limited to at least one of -NH2, -SH, -COOH, -P, -PO2, and the first connecting group D1 can be but is not limited to -(CH2) n -, n = 2 to 6. Taking the coordination group X as -SH and the first connecting group D1 as -(CH2)5- as an example, the quantum dot structure is as follows Figure 2B shown.

[0086] In the specific implementation, in the above-mentioned manufacturing method provided in the embodiment of the present disclosure, the wavelength of laser irradiation can be 800-1650nm, and the power density of laser irradiation can be 1-10W / cm 2 .

[0087] The disclosed embodiment uses infrared laser to irradiate quantum dots, which can generate local high temperature in specific areas, so that high temperature is generated where the quantum dot pattern is required, thereby decoupling the cross-links, thereby forming the required patterned quantum dots. The production method is simple and can form high-resolution quantum dots.

[0088] Optionally, the quantum dots provided in the embodiments of the present disclosure include but are not limited to CdS, CdSe, ZnSe, InP, PbS, CsPbCl3, CsPbBr3, CsPbI3, CdS / ZnS, CdSe / ZnSe, CdSe / ZnS, ZnSe, InP / ZnS, PbS / ZnS, CsPbCl3 / ZnS, CsPbBr3 / ZnS, CsPhI3 / ZnS and the like quantum dots.

[0089] In a specific implementation, at the first temperature, the first cross-linkable ligand undergoes a cross-linking reaction, which may be a cross-linking between the first cross-linkable ligands of the quantum dots or a cross-linking between the first cross-linkable ligands of the quantum dots and the second cross-linkable ligands of the substrate. Specifically, the cross-linking between the first cross-linkable ligands of the quantum dots, such as Figure 3A As shown; the cross-linking between the first cross-linkable ligand of the quantum dot and the second cross-linkable ligand of the substrate 100, as Figure 3B As shown, the surface of the substrate 100 has a second cross-linkable ligand (described later) that undergoes a cross-linking reaction with the first cross-linkable ligand.

[0090] It should be noted that the principle of light emission of electroluminescent devices is that the holes at the anode and the electrons at the cathode are transferred to the quantum dot layer for composite light emission. Due to the difference in energy level barriers between the anode and the light-emitting layer and between the cathode and the light-emitting layer, the transmission of electrons and holes is more difficult and the transmission rate and quantity are also very different. Therefore, in order to balance the concentration of electrons and holes, a hole injection layer, a hole transport layer, etc. are generally set between the quantum dot layer and the anode, and an electron transport layer, etc. are set between the quantum dot layer and the cathode. Of course, in the specific implementation, the required layers can be selected according to actual needs.

[0091] At present, electroluminescent devices can be divided into upright structures and inverted structures. The difference between the upright structure and the inverted structure lies in the different production order of the film layers. Specifically, the upright structure is to form an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer and a cathode in sequence on a substrate, while the inverted structure is to form a cathode, an electron transport layer, a light-emitting layer, a hole transport layer, a hole injection layer and an anode in sequence on a substrate.

[0092] The quantum dot light-emitting device provided in the embodiments of the present disclosure may be an upright structure or an inverted structure, and is not limited thereto.

[0093] The following is a brief description of the method for making a quantum dot light-emitting device in an inverted structure provided by the embodiment of the present disclosure through a specific embodiment. Of course, the embodiment of the present disclosure is also applicable to the method for making a normal structure. Specifically, the preparation method of each film layer in the quantum dot light-emitting device includes but is not limited to one or more of spin coating, evaporation, chemical vapor deposition, physical vapor deposition, magnetron sputtering, etc.

[0094] In an exemplary embodiment, a cross-linking reaction occurs between first cross-linkable ligands of quantum dots at a first temperature.

[0095] In specific implementation, in the above-mentioned manufacturing method provided in the embodiment of the present disclosure, before coating the quantum dot solution on the substrate, it also includes: forming a substrate; forming the substrate may specifically be:

[0096] like Figure 4A As shown, a first electrode 2 (taking the first electrode 2 as a cathode as an example) and a carrier film layer 3 (taking the carrier film layer 3 as an electron transport layer as an example) are sequentially formed on a substrate 1; wherein, there is no cross-linking ligand on the surface of the carrier film layer 3. Specifically, the manufacturing method of the cathode and the electron transport layer is the same as that of the prior art, and will not be described in detail here; the substrate 1 can be glass or a flexible PET substrate, and the cathode material can be a transparent metal oxide conductive material, such as ITO (indium tin oxide), AZO (aluminum-doped zinc oxide), IGZO (indium gallium zinc oxide); the material of the electron transport layer can be ZnO, ZnMgO, etc.

[0097] Then, if Figure 4B As shown, the substrate formed with the carrier film layer 3 is heated to a second temperature (laser irradiation), and a structure is coated on the carrier film layer 3. Figure 2B In the quantum dot solution shown, the first cross-linkable group Y is in a de-cross-linked state.

[0098] Next, at the first temperature, a cross-linking reaction occurs between the first cross-linkable ligands of the quantum dots, specifically:

[0099] like Figure 4C and Figure 4D As shown, Figure 4C and Figure 4D There are two parallel schemes, and you can choose one of them; at a first temperature (normal temperature), a cross-linking reaction occurs between the first cross-linkable ligands corresponding to adjacent quantum dots, and specifically, a cross-linking reaction occurs between the first cross-linkable groups Y.

[0100] Specifically, Figure 4C The quantum dots shown may only include the first crosslinkable group Y, and a schematic diagram of a crosslinking reaction between the first crosslinkable groups Y corresponding to adjacent quantum dots; specifically, the first crosslinkable group Y includes but is not limited to at least one of the following: cyclopentadiene, cyclopentadiene derivatives, dicyclopentadiene, dicyclopentadiene derivatives, bisphenol p-amino lactone; the first crosslinkable group Y is a cyclopentadiene derivative For example, the quantum dots only include A cross-linkable ligand; wherein R can be, but is not limited to, an alkane group such as methyl, ethyl, n-butyl, isobutyl, etc. The schematic diagram of the principle of the cross-linking reaction and the de-cross-linking reaction of the cyclopentadiene derivative is as follows Figure 5 As shown, the high temperature represents the temperature generated by laser irradiation.

[0101] Specifically, Figure 4D The first cross-linkable group Y of at least one quantum dot shown may include a first group Y1 and a second group Y2, and a schematic diagram of a cross-linking reaction between the first group Y1 and the second group Y2 corresponding to adjacent quantum dots; specifically, wherein,

[0102] The first group Y1 may be maleimide or its derivatives, and the second group Y2 may be furan or its derivatives; or,

[0103] The first group Y1 may be maleic anhydride or a derivative thereof, and the second group Y2 may be a polyol; or,

[0104] The first group Y1 may be maleimide, and the second group Y2 may be furfuryl ester.

[0105] The first group Y1 can be a maleimide derivative The second group Y2 may be a furan derivative For example, quantum dots include and Two cross-linkable ligands; wherein R can be but not limited to alkyl groups such as methyl, ethyl, n-butyl, isobutyl, etc., and the schematic diagram of the principle of the cross-linking reaction and the de-cross-linking reaction between the maleimide derivative and the furan derivative is as shown in Figure 6 As shown, the high temperature represents the temperature generated by laser irradiation.

[0106] In specific implementation, in the above-mentioned production method provided in the embodiment of the present disclosure, when the first cross-linkable group Y includes a first group Y1 and a second group Y2, in order to improve the uniformity of the patterning of the quantum dot layer, the molar number of the first group Y1 and the second group Y2 corresponding to at least one quantum dot is the same.

[0107] Then, if Figure 4E As shown, laser irradiation (indicated by the arrow) Figure 4C The quantum dots in the to-be-removed region AA after the cross-linking reaction is shown, and the quantum dots in the to-be-removed region AA are de-cross-linked at the second temperature (eg, 170° C.) generated by laser irradiation;

[0108] like Figure 4F As shown, the quantum dots in the area AA to be removed can be removed by using a solvent to clean the quantum dots irradiated by the laser, wherein the quantum dots in the area AA to be removed are dissolved in the solvent, and the quantum dots that undergo cross-linking reaction are not dissolved in the solvent, thereby forming a patterned quantum dot layer 4.

[0109] In another exemplary embodiment: at a first temperature, a cross-linking reaction occurs between the first cross-linkable ligand of the quantum dot and the second cross-linkable ligand on the substrate.

[0110] In specific implementation, in the above-mentioned manufacturing method provided in the embodiment of the present disclosure, before coating the quantum dot solution on the substrate, it also includes: forming a substrate; forming the substrate may specifically be:

[0111] like Fig. 7A As shown, a first electrode 2 (taking the first electrode 2 as a cathode as an example) and a carrier film layer 3 (taking the carrier film layer 3 as an electron transport layer as an example) are sequentially formed on a base substrate 1; wherein, a second cross-linkable ligand is connected to the surface of the carrier film layer 3, and the second cross-linkable ligand includes: a second connecting group D2 connected to the surface of the carrier film layer 3, and a second cross-linkable group P connected to the second connecting group D2. Specifically, the manufacturing method of the cathode and the electron transport layer is the same as that of the prior art, and will not be described in detail here; the base substrate 1 can be glass or a flexible PET substrate, and the cathode material can be a transparent metal oxide conductive material, such as ITO (indium tin oxide), AZO (aluminum-doped zinc oxide), IGZO (indium gallium zinc oxide); the material of the electron transport layer can be ZnO, ZnMgO, etc.

[0112] Specifically, Fig. 7A As shown, the carrier film layer 3 can be an electron transport layer, and the structure of the second connecting group D2 can be Wherein, * is the position for connecting the second crosslinkable group P, ** is the position for connecting other groups (such as hydroxyl groups, alkane groups, etc.), and *** is the position for connecting with the electron transport layer (3). Specifically, the electron transport layer (3) is generally ZnO, ZnMgO, etc., which has a large number of hydroxyl groups on the surface, so it is necessary to use React with the hydroxyl group on the surface of the electron transport layer, and then modify the second cross-linkable group P to the * position. Of course, it is not limited to this, as long as the second cross-linkable ligand can be modified to the surface of the carrier film layer 3.

[0113] Then, if Figure 7B As shown, the substrate formed with the carrier film layer 3 is heated to a second temperature (laser irradiation), and a structure is coated on the carrier film layer 3. Figure 2B In the quantum dot solution shown, the first cross-linkable group Y is in a de-cross-linked state.

[0114] Next, at the first temperature, a cross-linking reaction occurs between the first cross-linkable ligand of the quantum dot and the second cross-linkable ligand on the substrate, specifically:

[0115] like Figure 7C As shown, at a first temperature (normal temperature), the first cross-linkable ligand of the quantum dot undergoes a cross-linking reaction with the second cross-linkable ligand, specifically, the first cross-linkable group Y undergoes a cross-linking reaction with the second cross-linkable group P; or, Fig.7D As shown, at a first temperature (normal temperature), the first cross-linkable ligand of the quantum dot undergoes a cross-linking reaction with the second cross-linkable ligand, and at the same time, a cross-linking reaction occurs between the first cross-linkable ligands corresponding to adjacent quantum dots. Specifically, the first cross-linkable group Y undergoes a cross-linking reaction with the second cross-linkable group P, and at the same time, a cross-linking reaction occurs between the first cross-linkable groups Y corresponding to adjacent quantum dots. Figure 7C and Fig.7D There are two possible solutions, just choose one.

[0116] Specifically, the first crosslinkable group Y and the second crosslinkable group P may both be cyclopentadiene or a derivative thereof; or,

[0117] The first crosslinkable group Y and the second crosslinkable group P may both be dicyclopentadiene or a derivative thereof; or,

[0118] The first crosslinkable group Y and the second crosslinkable group P may both be bisphenol p-amino lactone; or,

[0119] One of the first crosslinkable group Y and the second crosslinkable group P is maleimide and the other is furan; or

[0120] One of the first crosslinkable group Y and the second crosslinkable group P is maleic anhydride or a derivative thereof, and the other is a polyol; or

[0121] Among the first crosslinkable group Y and the second crosslinkable group P, one is maleimide, and the other is furfuryl ester.

[0122] Then, if Fig. 7E As shown, after the quantum dots in the to-be-removed region AA undergo a cross-linking reaction by laser irradiation (indicated by the arrow), the quantum dots in the to-be-removed region AA are decross-linked at the second temperature (eg, 170° C.) generated by the laser irradiation.

[0123] like Figure 7F As shown, the quantum dots in the area AA to be removed can be removed by using a solvent to clean the quantum dots irradiated by the laser, wherein the quantum dots in the area AA to be removed are dissolved in the solvent, and the quantum dots that undergo cross-linking reaction are not dissolved in the solvent, thereby forming a patterned quantum dot layer 4.

[0124] In order to achieve full-color display, the quantum dot layer generally includes patterned quantum dots of different colors. The embodiment of the present disclosure takes the quantum dot layer including the first quantum dot layer, the second quantum dot layer and the third quantum dot layer as an example. In specific implementation, the color of the light emitted by the first quantum dot layer, the color of the light emitted by the second quantum dot layer and the color of the light emitted by the third quantum dot layer in the embodiment of the present disclosure are red, green and blue respectively. In this way, the embodiment of the present disclosure can produce the first quantum dot layer, the second quantum dot layer and the third quantum dot layer by the above-mentioned method of patterning the quantum dot layer, for example Figure 4A-4F or Figure 7A-7F The steps for making the first quantum dot layer are as follows: Figure 4A-4F or Figure 7A-7F The steps are completed. The difference between making the second quantum dot layer and the first quantum dot layer is that the quantum dots are green quantum dots and the positions of laser irradiation are different. Finally, the third quantum dot layer is made. The steps of making the third quantum dot layer continue according to the corresponding Figure 4A-4F or Figure 7A-7F The steps are completed, and the difference between making the third quantum dot layer and the first quantum dot layer and the second quantum dot layer is that the quantum dots are blue quantum dots and the positions of laser irradiation are different; thereby completing the patterning process of full-color quantum dots.

[0125] In summary, the embodiments of the present disclosure do not require inkjet printing or photolithography to complete the patterning of the quantum dot layer, and can form high-resolution, high-performance quantum dots.

[0126] After forming patterned quantum dot layers of different colors, a hole transport layer 5 is formed on the quantum dot layer 4, a hole injection layer 6 is formed on the hole transport layer 5, and a second electrode 7 (anode) is formed on the hole injection layer 6. Figure 8 shown.

[0127] After the production of the above-mentioned film layers is completed, the packaging process, cutting process, and bonding process of the quantum dot light-emitting device are also included to complete the production of the inverted structure quantum dot light-emitting device in the embodiment of the present disclosure. These processes are the same as the prior art and will not be repeated here.

[0128] The present disclosure does not limit the light emitting type of the quantum dot light emitting device, such as not limited to bottom light emitting or top light emitting. In a specific implementation, the electrode located on the light emitting side of the quantum dot light emitting device among the anode and the cathode is a transparent electrode.

[0129] Specifically, the substrate provided in the embodiment of the present disclosure further includes a driving circuit located between the base substrate and the first electrode, and a passivation layer, a planarization layer and other structures located between the driving circuit and the first electrode.

[0130] It should be noted that the embodiments of the present disclosure mainly take the inverted structure light-emitting device as an example to explain in detail the quantum dot light-emitting device and the manufacturing method thereof. Of course, the embodiments of the present disclosure are also applicable to the quantum dot light-emitting device with an upright structure and the manufacturing method thereof. The structure of the quantum dot light-emitting device with an upright structure is as follows: Fig. 9 As shown, it includes a second electrode (anode) 7, a hole injection layer 6, a carrier film layer (hole transport layer) 5, a quantum dot layer 4, an electron transport layer 3 and a first electrode (cathode) 2 which are sequentially stacked on a substrate 100. When the quantum dots are cross-linked, the method for making a quantum dot light-emitting device is the same as that for an inverted structure; when the quantum dots are cross-linked with the substrate, the carrier film layer is the hole transport layer, and the hole transport layer needs to be modified so that the hole transport layer is connected with a second cross-linkable ligand.

[0131] Based on the same inventive concept, the embodiment of the present disclosure also provides a quantum dot light-emitting device, such as Figure 8 and Fig. 9 As shown, it includes a substrate 100 and a patterned quantum dot layer 4 located on the substrate 100; Figure 2A As shown, the quantum dots of the quantum dot layer 4 include a quantum dot body QD and a first cross-linkable ligand connected to the surface of the quantum dot body QD; the quantum dot layer 4 is a structure after the first cross-linkable ligand undergoes a cross-linking reaction at a first temperature.

[0132] In a specific implementation, in the quantum dot light-emitting device provided in the embodiment of the present disclosure, if Figure 2A As shown, the first cross-linkable ligand includes: a coordination group X that coordinates and binds to the quantum dot body QD, a first connecting group D1 connected to the coordination group X, and a first cross-linkable group Y connected to the first connecting group D1;

[0133] like Figure 4F As shown, the quantum dot layer 4 is a structure after a cross-linking reaction occurs between the first cross-linkable groups Y corresponding to adjacent quantum dots.

[0134] In a specific implementation, in the quantum dot light-emitting device provided in the embodiment of the present disclosure, if Figure 4C As shown, the first cross-linkable group Y includes but is not limited to at least one of the following: cyclopentadiene, cyclopentadiene derivatives, dicyclopentadiene, dicyclopentadiene derivatives, bisphenol p-amino lactone; or,

[0135] like Figure 4D As shown, the first cross-linkable group Y corresponding to at least one quantum dot includes a first group Y1 and a second group Y2; wherein,

[0136] The first group Y1 may be maleimide or its derivatives, and the second group Y2 may be furan or its derivatives; or,

[0137] The first group Y1 may be maleic anhydride or a derivative thereof, and the second group Y2 may be a polyol; or,

[0138] The first group Y1 may be maleimide, and the second group Y2 may be furfuryl ester.

[0139] In a specific implementation, in the quantum dot light-emitting device provided in the embodiment of the present disclosure, if Figure 4D As shown, when the first cross-linkable group Y includes a first group Y1 and a second group Y2, in order to improve the uniformity of the patterning of the quantum dot layer, the molar numbers of the first group Y1 and the second group Y2 corresponding to at least one quantum dot are the same.

[0140] In a specific implementation, in the quantum dot light-emitting device provided in the embodiment of the present disclosure, such as 7C, Figure 8 and Fig. 9 As shown, the substrate 100 includes: a substrate substrate 1, a first electrode 2 located on the substrate substrate 1, and a carrier film layer 3 located on the first electrode 2; a quantum dot layer 4 is located on the carrier film layer 3, and a second cross-linkable ligand is connected to the surface of the carrier film layer 3; the second cross-linkable ligand includes: a second connecting group D2 connected to the surface of the carrier film layer 3, and a second cross-linkable group P connected to the second connecting group D2;

[0141] like Figure 7C As shown, the quantum dot layer 4 is a structure after a first cross-linkable ligand and a second cross-linkable ligand undergo a cross-linking reaction. Specifically, the quantum dot layer 4 is a structure after a first cross-linkable group Y and a second cross-linkable group P undergo a cross-linking reaction; or, Fig.7DAs shown, the quantum dot layer 4 is a structure in which a first cross-linkable ligand undergoes a cross-linking reaction with a second cross-linkable ligand, and a cross-linking reaction occurs between the first cross-linkable ligands corresponding to adjacent quantum dots. Specifically, the quantum dot layer 4 is a structure in which a first cross-linkable group Y undergoes a cross-linking reaction with a second cross-linkable group P, and a cross-linking reaction occurs between the first cross-linkable groups Y corresponding to adjacent quantum dots.

[0142] In a specific implementation, in the quantum dot light-emitting device provided in the embodiment of the present disclosure, the first cross-linkable group Y and the second cross-linkable group P may both be cyclopentadiene or its derivatives; or,

[0143] The first crosslinkable group Y and the second crosslinkable group P may both be dicyclopentadiene or a derivative thereof; or,

[0144] The first crosslinkable group Y and the second crosslinkable group P may both be bisphenol p-amino lactone; or,

[0145] One of the first crosslinkable group Y and the second crosslinkable group P is maleimide and the other is furan; or

[0146] One of the first crosslinkable group Y and the second crosslinkable group P is maleic anhydride or a derivative thereof, and the other is a polyol; or

[0147] Among the first crosslinkable group Y and the second crosslinkable group P, one is maleimide, and the other is furfuryl ester.

[0148] In a specific implementation, in the quantum dot light-emitting device provided in the embodiment of the present disclosure, if Figure 7C and Fig.7D As shown, the carrier film layer 3 can be an electron transport layer, and the structure of the second connecting group D2 can be Wherein, * is the position for connecting to the second crosslinkable group P, ** is the position for connecting to other groups (such as hydroxyl groups, alkane groups, etc.), and *** is the position for connecting to the electron transport layer (3).

[0149] In a specific implementation, in the quantum dot light-emitting device provided in the embodiment of the present disclosure, if Figure 2A As shown, the coordination group X includes but is not limited to at least one of -NH2, -SH, -COOH, -P, -PO2, and the first connecting group D1 is but is not limited to -(CH2) n -, n=2~6.

[0150] It should be noted that Figure 2B , Figure 3A , Figure 3B , Figure 4B-Figure 4F , Figure 7B-7F-SH or HS- in the figure refers to a thiol group. The -SH or HS- shown in these figures are arranged around the surface of the quantum dot QD, and are therefore shown as -SH or HS-.

[0151] Based on the same inventive concept, an embodiment of the present invention further provides a display device, including the above-mentioned quantum dot light-emitting device provided by an embodiment of the present invention.

[0152] In specific implementation, the display device provided in the embodiment of the present invention can be any product or component with a display function, such as a mobile phone, a tablet computer, a television, a display, a laptop computer, a digital photo frame, a navigator, etc. Other essential components of the display device should be understood by ordinary technicians in the field, and will not be described in detail here, nor should they be used as limitations on the present invention. The implementation of the display device can refer to the embodiment of the quantum dot light-emitting device above, and the repeated parts will not be described in detail.

[0153] In specific implementation, the display device provided by the embodiment of the present invention may further include other functional film layers well known to those skilled in the art, which will not be described in detail here.

[0154] The embodiments of the present disclosure provide a quantum dot light-emitting device and a method for manufacturing the same, as well as a display device. The method comprises coating a quantum dot solution in which a first cross-linkable ligand is in a de-cross-linked state on a substrate. At a first temperature, the first cross-linkable ligand of the quantum dots undergoes a cross-linking reaction. The quantum dots undergoing the cross-linking reaction have a network structure, are relatively stable, and are difficult to dissolve in a solvent, so they are retained on the substrate. Laser irradiation is then used to irradiate an area to be removed of the quantum dots after the cross-linking reaction. The quantum dots in the area to be removed de-cross-link at a second temperature generated by the laser irradiation. The de-cross-linked quantum dots can be dissolved in a solvent. Therefore, a solvent can be used to clean the quantum dots irradiated by the laser to remove the quantum dots in the area to be removed, thereby forming a patterned quantum dot layer, i.e., completing the patterning of the quantum dot layer. Compared with the prior art, the present disclosure does not require inkjet printing or photolithography to complete the patterning of the quantum dot layer, and can form high-resolution quantum dots with good performance.

[0155] Although the preferred embodiments of the present disclosure have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications falling within the scope of the present disclosure.

[0156] Obviously, those skilled in the art can make various changes and modifications to the embodiments of the present disclosure without departing from the spirit and scope of the embodiments of the present disclosure. Thus, if these modifications and variations of the embodiments of the present disclosure fall within the scope of the claims of the present disclosure and their equivalents, the present disclosure is also intended to include these modifications and variations.

Claims

1. A method for manufacturing a quantum dot light-emitting device, wherein: include: coating a quantum dot solution on a substrate; The quantum dot comprises a quantum dot body and a first cross-linkable ligand connected to the surface of the quantum dot body; When the quantum dots are in a solution state, the first cross-linkable ligand is in a de-cross-linked state; At a first temperature, the first cross-linkable ligand of the quantum dot undergoes a cross-linking reaction; The quantum dots in the region to be removed are decrosslinked at a second temperature generated by the laser irradiation after the crosslinking reaction by laser irradiation; the difference between the second temperature and the first temperature is greater than a preset value; wherein the wavelength of the laser irradiation is 800-1650nm, and the power density of the laser irradiation is 1-10W / cm 2 ; The quantum dots in the area to be removed are removed to form a patterned quantum dot layer.

2. The method according to claim 1, wherein: Before coating the quantum dot solution on the substrate, the method further includes: forming the substrate; The forming of the substrate comprises: A first electrode and a carrier film layer are sequentially formed on a substrate; wherein the surface of the carrier film layer has no cross-linking ligands; The first cross-linkable ligand of the quantum dot undergoes a cross-linking reaction at the first temperature, specifically: A cross-linking reaction occurs between the first cross-linkable ligands corresponding to adjacent quantum dots.

3. The method according to claim 2, wherein: The first cross-linkable ligand comprises: a coordination group for coordination bonding with the quantum dot body, a first connecting group connected to the coordination group, and a first cross-linkable group connected to the first connecting group; A cross-linking reaction occurs between the first cross-linkable groups.

4. The method according to claim 3, wherein: The first cross-linkable group comprises at least one of the following: cyclopentadiene, cyclopentadiene derivatives, dicyclopentadiene, dicyclopentadiene derivatives, bisphenol p-amino lactone; or, The first cross-linkable group corresponding to at least one of the quantum dots includes a first group and a second group; wherein, The first group is maleimide, and the second group is furan; or, The first group is maleic anhydride or a derivative thereof, and the second group is a polyol; or The first group is maleimide, and the second group is furfuryl ester.

5. The method according to claim 4, wherein: The molar number of the first group and the molar number of the second group corresponding to at least one of the quantum dots are the same.

6. The method according to claim 1, wherein: Before coating the quantum dot solution on the substrate, the method further includes: forming the substrate; The forming of the substrate comprises: A first electrode and a carrier film layer are sequentially formed on a substrate; wherein a second cross-linkable ligand is connected to a surface of the carrier film layer; The first cross-linkable ligand of the quantum dot undergoes a cross-linking reaction at the first temperature, specifically: At the first temperature, the first cross-linkable ligand of the quantum dot undergoes a cross-linking reaction with the second cross-linkable ligand; or, while the first cross-linkable ligand of the quantum dot undergoes a cross-linking reaction with the second cross-linkable ligand, a cross-linking reaction occurs between the first cross-linkable ligands corresponding to adjacent quantum dots.

7. The method according to claim 6, wherein: The first cross-linkable ligand includes: a coordinating group that is coordinated with the quantum dot body, a first connecting group connected to the coordinating group, and a first cross-linkable group connected to the first connecting group; the second cross-linkable ligand includes: a second connecting group connected to the surface of the carrier film layer, and a second cross-linkable group connected to the second connecting group.

8. The method according to claim 7, wherein: The first crosslinkable group and the second crosslinkable group are both cyclopentadiene or a derivative thereof; or, The first crosslinkable group and the second crosslinkable group are both dicyclopentadiene or a derivative thereof; or, The first cross-linkable group and the second cross-linkable group are both bisphenol p-amino lactone; or, One of the first crosslinkable group and the second crosslinkable group is maleimide, and the other is furan; or One of the first crosslinkable group and the second crosslinkable group is maleic anhydride or a derivative thereof, and the other is a polyol; or Among the first crosslinkable group and the second crosslinkable group, one is maleimide, and the other is furfuryl ester.

9. The method according to claim 7, wherein: The carrier film layer is an electron transport layer, and the structure of the second connecting group is Wherein, * is the position for connecting the second cross-linkable group, ** is the position for connecting other groups, and *** is the position for connecting with the electron transport layer.

10. The production method according to claim 3 or 7, wherein: The coordination group includes at least one of -NH2, -SH, -COOH, -P, and -PO2, and the first connecting group is -(CH2) n -, n=2~6.

11. The method according to any one of claims 1 to 9, wherein: Removing the quantum dots in the area to be removed specifically includes: The quantum dots irradiated by the laser are cleaned with a solvent, wherein the quantum dots in the area to be removed are dissolved in the solvent, and the quantum dots that undergo cross-linking reaction are not dissolved in the solvent.

12. The method according to any one of claims 1 to 9, wherein: A quantum dot solution is coated on a substrate, wherein when the quantum dots are in a solution state, the first cross-linkable ligand is in a de-cross-linked state, specifically: The quantum dot solution is coated after the substrate is heated to the second temperature.

13. A quantum dot light emitting device, wherein: The quantum dot light-emitting device is manufactured using the manufacturing method as described in any one of claims 1 to 12, comprising a substrate and a quantum dot layer patterned on the substrate, wherein the quantum dots of the quantum dot layer comprise a quantum dot body and a first cross-linkable ligand connected to the surface of the quantum dot body; the quantum dot layer is a structure after the first cross-linkable ligand undergoes a cross-linking reaction at a first temperature.

14. The quantum dot light emitting device according to claim 13, wherein: The first cross-linkable ligand comprises: a coordination group for coordination bonding with the quantum dot body, a first connecting group connected to the coordination group, and a first cross-linkable group connected to the first connecting group; The quantum dot layer is a structure formed after a cross-linking reaction occurs between first cross-linkable groups corresponding to adjacent quantum dots.

15. The quantum dot light emitting device according to claim 14, wherein: The first cross-linkable group comprises at least one of the following: cyclopentadiene, cyclopentadiene derivatives, dicyclopentadiene, dicyclopentadiene derivatives, bisphenol p-amino lactone; or, The first cross-linkable group corresponding to at least one of the quantum dots includes a first group and a second group; wherein, The first group is maleimide, and the second group is furan; or, The first group is maleic anhydride or a derivative thereof, and the second group is a polyol; or The first group is maleimide, and the second group is furfuryl ester.

16. The quantum dot light emitting device according to claim 15, wherein: The molar number of the first group and the molar number of the second group corresponding to at least one of the quantum dots are the same.

17. The quantum dot light emitting device according to claim 13, wherein: The substrate comprises: a substrate substrate, a first electrode located on the substrate substrate, and a carrier film layer located on the first electrode; the quantum dot layer is located on the carrier film layer, and a second cross-linkable ligand is connected to the surface of the carrier film layer; The quantum dot layer is a structure formed after a cross-linking reaction occurs between the first cross-linkable ligand and the second cross-linkable ligand; or, the quantum dot layer is a structure formed after a cross-linking reaction occurs between the first cross-linkable ligand and the second cross-linkable ligand, and between the first cross-linkable ligands corresponding to adjacent quantum dots.

18. The quantum dot light emitting device according to claim 17, wherein: The first cross-linkable ligand includes: a coordinating group that is coordinated with the quantum dot body, a first connecting group connected to the coordinating group, and a first cross-linkable group connected to the first connecting group; the second cross-linkable ligand includes: a second connecting group connected to the surface of the carrier film layer, and a second cross-linkable group connected to the second connecting group.

19. The quantum dot light emitting device according to claim 18, wherein: The first crosslinkable group and the second crosslinkable group are both cyclopentadiene or a derivative thereof; or, The first crosslinkable group and the second crosslinkable group are both dicyclopentadiene or a derivative thereof; or, The first cross-linkable group and the second cross-linkable group are both bisphenol p-amino lactone; or, One of the first crosslinkable group and the second crosslinkable group is maleimide, and the other is furan; or One of the first crosslinkable group and the second crosslinkable group is maleic anhydride or a derivative thereof, and the other is a polyol; or Among the first crosslinkable group and the second crosslinkable group, one is maleimide, and the other is furfuryl ester.

20. The quantum dot light emitting device according to claim 18, wherein: The carrier film layer is an electron transport layer, and the structure of the second connecting group is Wherein, * is the position for connecting the second cross-linkable group, ** is the position for connecting other groups, and *** is the position for connecting with the electron transport layer.

21. The quantum dot light emitting device according to claim 14 or 18, wherein: The coordination group includes at least one of -NH2, -SH, -COOH, -P, and -PO2, and the first connecting group is -(CH2) n -, n=2~6.

22. A display device, wherein: A quantum dot light-emitting device comprising the device described in any one of claims 13 to 21.

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