Light emitting component, light emitting element array chip, and optical measuring device

Abstract

The present application provides a light emitting component, a light emitting element array chip, and an optical measuring device. The light emitting component includes a substrate, a plurality of light emitting elements disposed on the substrate to emit light in a direction intersecting a surface of the substrate, and a gate electrode electrically connected to each of the plurality of light emitting elements and controlled to simultaneously turn on and off the plurality of light emitting elements, a distance between each of the plurality of light emitting elements and the gate electrode being smaller than a distance between the most distantly located light emitting elements of the plurality of light emitting elements.

Description

Technical Field

[0001] This disclosure relates to light-emitting components, light-emitting element array chips, and optical measurement devices. Background Technology

[0002] Japanese Patent Application Publication No. 1-238962 discloses an array of light-emitting elements in which multiple light-emitting elements capable of externally controlling threshold voltage or threshold current are arranged in one-dimensional, two-dimensional or three-dimensional form, electrodes controlling the threshold voltage or threshold current of each light-emitting element are connected to each other by electrical means, and clock lines for externally applied voltage or current are connected to each light-emitting element.

[0003] Japanese Patent Application Publication No. 2009-286048 discloses a self-scanning type light source head, which includes: a substrate; a surface-emitting semiconductor laser arranged in an array on the substrate; and a thyristor disposed on the substrate and serving as a switching element for selectively turning the surface-emitting semiconductor laser on and off. Summary of the Invention

[0004] In 3D sensing and similar applications, light-emitting units employ light-emitting heads with multiple light-emitting elements. Consider an array where each light-emitting element is composed of multiple light-emitting elements, rather than a single element, and these multiple light-emitting elements are synchronized in their illumination and extinguishing. In this case, the electrode structure for illuminating or extinguishing the array of multiple light-emitting elements is sometimes also a structure used to synchronize their operation.

[0005] The purpose of this disclosure is to enable the simultaneous lighting or extinguishing of multiple arrayed light-emitting elements.

[0006] According to a first aspect of this disclosure, a light-emitting component is provided, comprising: a substrate; a plurality of light-emitting elements disposed on the substrate and emitting light in a direction intersecting a surface of the substrate; and a gate electrode electrically connected to each of the plurality of light-emitting elements and controlled to simultaneously turn the plurality of light-emitting elements on and off, wherein the distance between each light-emitting element and the gate electrode is smaller than the distance between the farthest light-emitting elements among the plurality of light-emitting elements.

[0007] According to the second aspect of this disclosure, the gate electrode is connected as a common layer at a location outside the periphery of the light-emitting element.

[0008] According to the third aspect of this disclosure, the gate electrode covers the portion of the light-emitting element other than its surrounding area.

[0009] According to the fourth aspect of this disclosure, the gate electrodes are connected as a common layer by forming a branch structure.

[0010] According to the fifth aspect of this disclosure, the light-emitting element forms a layer structure comprising: a thyristor and a light-emitting layer disposed between the layers constituting the thyristor for emitting light.

[0011] According to the sixth aspect of this disclosure, the upper p-type layer and the upper n-type layer of the thyristor are separated among the plurality of light-emitting elements, and the lower gate layer of the thyristor is connected as a common layer among the plurality of light-emitting elements and functions as a gate layer.

[0012] According to the seventh aspect of this disclosure, a portion of the upper side of the lower gate layer is further segmented among the plurality of light-emitting elements.

[0013] According to the eighth aspect of this disclosure, a portion of the broken p-layer of the thyristor has a current-stenciling layer that narrows the current flowing through the light-emitting layer.

[0014] According to the ninth aspect of this disclosure, the light-emitting component further includes a plurality of holes disposed around each of the plurality of light-emitting elements of the thyristor.

[0015] According to the 10th aspect of this disclosure, the gate layer and the uppermost layer of the thyristor are connected as a common layer between the plurality of said apertures and the plurality of said light-emitting elements.

[0016] According to the 11th aspect of this disclosure, the thyristor has a current narrowing layer that is oxidized through the aperture, which narrows the current flowing through the light-emitting layer.

[0017] According to the 12th aspect of this disclosure, a light-emitting element array chip is provided, comprising: a column of light-emitting components, wherein the light-emitting components are arranged in a column in a main scanning direction; and a driving unit for inputting and outputting signals that drive the light-emitting components.

[0018] According to the 13th aspect of this disclosure, an optical measuring apparatus is provided, comprising: a light-emitting component; a light-receiving component that receives reflected light from an object irradiated by the light-emitting component; and a processing unit that processes information related to the light received by the light-receiving component and measures the distance from the light-emitting component to the object or the shape of the object.

[0019] (Effect)

[0020] According to the first method, the lighting or extinguishing of multiple arrayed light-emitting elements can be synchronized.

[0021] According to the second method, the distance between the gate electrode and each light-emitting element can be reduced more easily.

[0022] According to the third method, the fabrication of the gate electrode becomes easier.

[0023] According to the fourth method, the area of ​​the gate electrode can be reduced, and the distance between the gate electrode and each light-emitting element can be reduced.

[0024] According to the fifth method, the structure of the light-emitting element can be simplified.

[0025] According to the sixth method, a structure in which the light-emitting element is simultaneously lit and turned off in a mesa-shaped manner can be realized.

[0026] According to the seventh method, the area of ​​the current narrowing layer can be reduced.

[0027] According to the eighth method, current can flow through the emission outlet of the emitted light.

[0028] According to the ninth method, a current-narrowing layer can be formed through the aperture.

[0029] According to the 10th method, the efficiency of the switch is improved.

[0030] According to the 11th method, current can flow through the emission outlet of the emitted light.

[0031] According to the 12th method, a light-emitting element array chip can be provided that enables the simultaneous lighting or extinguishing of multiple arrayed light-emitting elements.

[0032] According to the 13th method, an optical measurement device that enables the light-emitting elements to be lit in parallel can be obtained. Attached Figure Description

[0033] Figure 1 It is an equivalent circuit diagram illustrating the circuit structure of the light-emitting component.

[0034] Figure 2 This is an example of a plan view and a cross-sectional view of the light-emitting component using this embodiment. Figure 2 (a) is a plan view of the light-emitting components. Figure 2 (b) is Figure 2 (a) is a cross-sectional view along line IIB-IIB.

[0035] Figure 3 This is an enlarged view of the surface-emitting laser element in the light-emitting component of this embodiment.

[0036] Figure 4 This is an enlarged view of the light-emitting component in the light-emitting component of this embodiment.

[0037] Figure 5 This is an enlarged view of a mesa-type surface-emitting laser element.

[0038] Figure 6 (a) to (b) are magnified views of the light-emitting element in a mesa-type surface-emitting laser element.

[0039] Figure 7 Figures (a) to (b) are diagrams representing various forms of n-type ohmic electrodes.

[0040] Figure 8 (c) to (d) are diagrams representing various forms of n-type ohmic electrodes.

[0041] Figure 9 (e) is a diagram representing various forms of n-type ohmic electrodes.

[0042] Figure 10 It is a timing diagram illustrating the operation of the light-emitting component.

[0043] Figure 11 This is a top view of a light-emitting device equipped with a light-emitting chip that uses light-emitting components.

[0044] Figure 12 This is a diagram illustrating an example of the structure of a light-emitting chip, the structure of the signal generation circuit of a light-emitting device, and the structure of wiring (lines) on a circuit board.

[0045] Figure 13 This is a diagram illustrating an optical measuring device that uses a light-emitting device.

[0046] Figure 14 This diagram illustrates an image forming apparatus that uses a light-emitting device. Detailed Implementation

[0047] The embodiments of this disclosure will now be described in detail with reference to the accompanying drawings.

[0048] In addition, aluminum will be referred to as Al and other elements below, using element symbols for identification.

[0049] Here, the light-emitting component 10 will be described first. The light-emitting component 10 of this embodiment has a plurality of surface-emitting laser elements (VCSELs) arranged in a row on the surface of a substrate 80 with a rectangular surface shape.

[0050] (Circuit structure of light-emitting component 10)

[0051] Figure 1 This is an equivalent circuit diagram illustrating the circuit structure of the light-emitting component 10. All components described below, except for the terminals ( terminal, Terminal, Vgk terminal, Apart from the terminals, the layout on the light-emitting component 10 (see below) Figure 2Furthermore, the Vsub terminal provided on the back side of the substrate 80 is shown extending out of the substrate 80.

[0052] The light-emitting component 10 includes a light-emitting part 102 composed of surface-emitting laser elements VCSEL1 to VCSEL128.

[0053] Furthermore, the light-emitting component 10 has transfer thyristors T1 to T128 arranged in a row, similar to the surface-emitting laser elements VCSEL1 to VCSEL128 (hereinafter referred to as transfer thyristors T if no distinction is made).

[0054] Furthermore, although the example of a transmission thyristor T will be used here, other circuit elements can also be used as long as they are elements that are sequentially turned on. For example, a shift register or a circuit element composed of multiple transistors can also be used.

[0055] In addition, the light-emitting component 10 transmits thyristors T1 to T128 in pairs according to their numbering order, and each pair is provided with coupling diodes D1 to D127 (referred to as coupling diodes D if not distinguished).

[0056] Furthermore, the light-emitting component 10 includes power line resistors Rg1 to Rg128 (hereinafter referred to as power line resistor Rg if no distinction is made).

[0057] Furthermore, the light-emitting component 10 includes a startup diode SD. It also includes current-limiting resistors R1 and R2 to prevent excessive current from flowing into the first transmission signal, as described later. The first transmission signal line 72 and the transmission of the second transmission signal The second transmission signal line 73 is configured to flow through it.

[0058] Here, the drive unit 101 is composed of transmission thyristors T1 to T128, power line resistors Rg1 to Rg128, coupling diodes D1 to D127, start-up diode SD, and current-limiting resistors R1 and R2.

[0059] In addition, as will be discussed later Figure 2 As shown in (b), the surface-emitting laser elements VCSEL1~VCSEL128, the transmission thyristors T1~T128, the power line resistors Rg1~Rg128, the coupling diodes D1~D127, the start-up diode SD, and the current-limiting resistors R1 and R2 are arranged in a row on the substrate 80.

[0060] exist Figure 1In the diagram, the surface-emitting laser elements VCSEL1 to VCSEL128 of the light-emitting section 102, the driving section 101, and the transmission thyristors T1 to T128 are arranged in numerical order from the left. Furthermore, the coupling diodes D1 to D127 and the power line resistors Rg1 to Rg128 are also arranged in numerical order from the left.

[0061] In this embodiment, the light-emitting unit 102 contains 128 surface-emitting laser elements (VCSELs), 128 transfer thyristors (Ts), and 128 power line resistors (Rg). Additionally, the number of coupling diodes (Ds) is 127, which is one less than the number of transfer thyristors (Ts).

[0062] The number of surface-emitting laser elements (VCSELs) is not limited to the above-mentioned number; it can be set to a predetermined number. Furthermore, the number of transmission thyristors (Ts) can be greater than the number of surface-emitting laser elements (VCSELs).

[0063] The aforementioned coupling diode D and startup diode SD are two-terminal semiconductor devices with a diode structure having an anode terminal (anode) and a cathode terminal (cathode). The surface-emitting laser element VCSEL and the transmission thyristor T are semiconductor devices with a thyristor structure having three terminals: an anode terminal (anode), a gate terminal (gate), and a cathode terminal (cathode).

[0064] Furthermore, surface-emitting laser elements (VCSELs), coupling diodes (D), start-up diodes (SD), and transfer thyristors (T) may not necessarily have anode, gate, and cathode terminals as electrodes. Therefore, the terminal markings may be omitted below.

[0065] Next, the electrical connections of each element in the light-emitting component 10 will be explained.

[0066] The anodes of the surface-emitting laser element VCSEL and the transmission thyristor T are respectively connected to the substrate 80 of the light-emitting component 10 (the anodes are shared).

[0067] These anodes are transmitted via a back electrode 89, which serves as a Vsub terminal disposed on the back side of the substrate 80 (see below). Figure 2 (b) is connected to power line 200a. Power line 200a is supplied with a reference potential Vsub from the reference potential supply section 160.

[0068] Furthermore, this connection is the structure when using a p-type substrate 80. When using an n-type substrate, the polarity is reversed. When using an intrinsic (i) type substrate without added impurities, a terminal connected to the power line 200a that supplies the reference potential Vsub is provided on the side of the substrate where the driving part 101 and the light-emitting part 102 are provided.

[0069] Along the arrangement of the transfer thyristors T, the cathodes of odd-numbered transfer thyristors T1, T3, ... are connected to the first transfer signal line 72. Furthermore, the first transfer signal line 72 is connected via a current-limiting resistor R1 and... Terminal connection. In this... The terminal is connected to the first transmission signal line 201, and the first transmission signal is transmitted from the transmission signal generation unit 120.

[0070] On the other hand, along the arrangement of the transmission thyristors T, the cathodes of even-numbered transmission thyristors T2, T4, ... are connected to the second transmission signal line 73. Furthermore, the second transmission signal line 73 is connected to... via the current-limiting resistor R2. Terminal connection. In this... The terminal is connected to the second transmission signal line 202, and the second transmission signal is transmitted from the transmission signal generation unit 120.

[0071] The cathodes of each of the surface-emitting laser elements VCSEL1 to VCSEL128 are connected to the illumination signal line 75. Illumination signal line 75 is connected to... Terminal connection. In the light-emitting component 10, The terminal is connected to the lighting signal line 204 via a current-limiting resistor RⅠ disposed on the outside of the light-emitting component 10, and a lighting signal is sent from the lighting signal generation unit 140. Light up signal The surface-emitting laser elements VCSEL1 to VCSEL128 are supplied with current for lighting.

[0072] The gates Gt1 to Gt128 (hereinafter referred to as gate Gt if not distinguished) of each of the transmission thyristors T1 to T128 are connected one-to-one with the gates Gs1 to Gs128 (hereinafter referred to as gate Gs if not distinguished) of the surface-emitting laser elements VCSEL1 to VCSEL128 with the same number. Therefore, among the gates Gt1 to Gt128 and gates Gs1 to Gs128, those with the same number are at the same potential. Thus, for example, the designation "gate Gt1" (or "gate Gs1") indicates that they are at the same potential.

[0073] Coupling diodes D1 to D127 are connected between each pair of gates Gt1 to Gt128 of the thyristors T1 to T128 in numerical order. That is, coupling diodes D1 to D127 are connected in series, each sandwiched between gates Gt1 to Gt128. Furthermore, coupling diode D1 is oriented in the direction of current flow from gate Gt1 to gate Gt2. The same applies to the other coupling diodes D2 to D127.

[0074] The gate Gt (gate Gs) of the transfer thyristor T is connected to the power supply line 71 via a power supply line resistor Rg corresponding to each transfer thyristor T. The power supply line 71 is connected to the Vgk terminal. A power supply line 200b is connected to the Vgk terminal, and a power supply potential Vgk is supplied from the power supply potential supply unit 170.

[0075] Furthermore, the gate Gt1 of the transmission thyristor T1 is connected to the cathode terminal of the start-up diode SD. On the other hand, the anode of the start-up diode SD is connected to the second transmission signal line 73.

[0076] (Specific structure of the light-emitting component 10)

[0077] Figure 2 This is an example of a plan view and a cross-sectional view of the light-emitting component 10 according to this embodiment. Furthermore, Figure 3 This is an enlarged view of the surface-emitting laser element VCSEL in the light-emitting component 10 of this embodiment.

[0078] In addition, for ease of explanation, the upper side of the diagram will be referred to as the upper side and the lower side as the lower side, but the actual orientation is not limited to the upper or lower side.

[0079] in, Figure 2 (a) is a plan view of the light-emitting component 10. Figure 2 (b) is Figure 2 A sectional view at line IIB-IIB in (a). Figure 2 In (a), the rightward direction of the paper is the x-direction, the upward direction of the paper is the y-direction, and the surface direction of the paper is the z-direction. Furthermore, the plane is the surface viewed from the surface side (z-direction) of the paper. Therefore, in Figure 2 In (b), the left direction of the paper is the z direction, and the top direction of the paper is the y direction.

[0080] exist Figure 2 (a) shows the portion centered on the surface-emitting laser elements VCSEL1 to VCSEL4 and the transmission thyristors T1 to T4. In addition, the Vsub terminal (back electrode 89) provided on the back side of the substrate 80 is shown extended outside the substrate 80.

[0081] As in Figure 2 (a) Cross-sectional view along line IIB-IIB Figure 2 In (b), starting from the bottom of the figure, the surface-emitting laser element VCSEL1, the transfer thyristor T1, the coupling diode D1, and the power line resistor Rg1 are shown. Furthermore, in Figure 2In figures (a) and (b), the main components or terminals are labeled by name. In addition, on the surface of substrate 80, surface-emitting laser elements VCSELs (VCSEL1 to VCSEL4) are arranged along the x-direction.

[0082] like Figure 2 as well as Figure 3 As shown in the illustration, in this embodiment, the surface-emitting laser element (VCSEL) is composed of multiple light-emitting elements Hs. Each of these multiple light-emitting elements Hs functions as a surface-emitting laser element (VCSEL) and emits light from multiple emission ports 50. For the sake of simplicity, five light-emitting elements Hs1 to Hs5 are illustrated here, but in practice, for example, 40 light-emitting elements Hs are provided to constitute a surface-emitting laser element (VCSEL).

[0083] First, using Figure 2 (b) describes the cross-sectional structure of the light-emitting component 10.

[0084] On a p-type substrate 80, an anode (DBR) layer 81 (pDBR layer 81) constituting a p-type DBR structure comprising a surface-emitting laser element VCSEL, a transfer thyristor T, a coupling diode D1, and a power line resistor Rg1, are sequentially disposed, along with an n-type gate layer 82 (n gate layer 82), a light-emitting layer 83, a p-type gate layer 84 (p gate layer 84), and an n-type DBR cathode layer 85 (nDBR layer 85). The markings in parentheses are used below. The same applies in other cases. Here, the semiconductor layer on which the pDBR layer 81, n gate layer 82, light-emitting layer 83, p gate layer 84, and nDBR layer 85 are stacked is referred to as a semiconductor stack.

[0085] Moreover, such as Figure 2 As shown in (b), a protective layer 90 made of a light-transmitting insulating material is provided in the light-emitting component 10, and this protective layer 90 is provided in such a way that it covers the surface and sides of these stacked structures. Figure 2 In (b), arrows indicate the direction of light emission from the surface-emitting laser element VCSEL (light emission direction). Here, it is the direction intersecting the surface of the substrate 80 (in this case, the z-direction). Here, "surface" refers to the surface or back surface of the light-emitting component 10.

[0086] Furthermore, these stacked structures and the wiring of power lines 71, first signal transmission lines 72, second signal transmission lines 73, lighting signal lines 75, etc., are routed through through-holes provided in the protective layer 90 (in Figure 2 (A) is connected by ○. In the following description, the description of the protective layer 90 and the through hole is omitted.

[0087] In addition, such as Figure 2 As shown in (b), a back electrode 89, which serves as a Vsub terminal, is provided on the back side of the substrate 80.

[0088] The pDBR layer 81, n-gate layer 82, light-emitting layer 83, p-gate layer 84, and nDBR layer 85 are semiconductor layers, monolithically stacked by epitaxial growth. Then, the semiconductor layers between the stacked structures are removed by etching (mesa etching), resulting in multiple electrically isolated stacked structures (islands) (stacked structures 301, 302, 303, ... described later). Alternatively, the multiple stacked structures can be electrically isolated by ion implantation or the like, rather than by etching.

[0089] Here, the markings on the pDBR layer 81 and nDBR layer 85 correspond to their functions in the case of a surface-emitting laser element (VCSEL). Specifically, the pDBR layer 81 functions as both the anode and the DBR layer of the VCSEL. Similarly, the nDBR layer 85 functions as both the cathode and the DBR layer of the VCSEL. In other words, the VCSEL has a thyristor structure including both an anode and a cathode. Furthermore, the VCSEL can also be described as having a layer structure containing a thyristor and a light-emitting layer 83 disposed between the layers constituting the thyristor for emitting light.

[0090] In addition, when the coupling diode D and the power line resistor Rg are configured, they have different functions as will be described later.

[0091] As described below, the multiple stacked structures include stacked structures that do not have a portion of the layers among the multilayers 81, n-gate layer 82, light-emitting layer 83, p-gate layer 84, and nDBR layer 85. For example, stacked structure 301 has a portion that does not have a portion of the layers 81, n-gate layer 82, light-emitting layer 83, p-gate layer 84, and nDBR layer 85.

[0092] Next, using Figure 2 (a) describes the planar layout of the light-emitting component 10.

[0093] A surface-emitting laser element VCSEL1 is disposed in the stacked structure 301. A pass thyristor T1 and a coupling diode D1 are disposed in the stacked structure 302. A power line resistor Rg1 is disposed in the stacked structure 303. A start-up diode SD is disposed in the stacked structure 304. A current-limiting resistor R1 is disposed in the stacked structure 305, and a current-limiting resistor R2 is disposed in the stacked structure 306.

[0094] Furthermore, multiple stacked structures identical to the stacked structures 301, 302, and 303 are formed side-by-side in the light-emitting component 10. These stacked structures, like the stacked structures 301, 302, and 303, include surface-emitting laser elements VCSEL2, VCSEL3, VCSEL4, ..., transmission thyristors T2, T3, and T4, ..., and coupling diodes D2, D3, D4, ...

[0095] Here, according to Figure 2 (a) and (b) provide a detailed description of the stacked structures 301 to 306.

[0096] like Figure 2 As shown in (b), the surface-emitting laser element VCSEL1 disposed on the stacked structure 301 is composed of a pDBR layer 81, an n-gate layer 82, an emitting layer 83, a p-gate layer 84, and an nDBR layer 85.

[0097] In the pDBR layer 81 of the surface-emitting laser element VCSEL, such as Figure 2 As shown in black in (b), it includes a current-restricting layer (described later) that narrows the current flowing through the light-emitting layer 83. Figure 4 The current-restricting layer (81b) is provided to confine the current flowing in a surface-emitting laser element (VCSEL) to the central part of the VCSEL. Specifically, the peripheral portion of the VCSEL has more defects due to mesa etching, which easily leads to non-emitting recoupling. Therefore, the current-restricting layer is configured such that the central part of the VCSEL becomes a current-passing region (region) α where current flows easily, and the peripheral part becomes a current-blocking region (region) β where current flow is difficult. Furthermore, the current-blocking region β is sometimes labeled as the current-restricting region.

[0098] If a current blocking section β is provided, the power consumed in non-light-emitting recoupling is suppressed, thus reducing power consumption and improving light extraction efficiency. Furthermore, light extraction efficiency refers to the amount of light that can be extracted per unit of power.

[0099] Furthermore, the current-narrowing layer will be discussed later.

[0100] Furthermore, the surface-emitting laser element VCSEL is provided with an exit point 50 for light emitted from the light-emitting elements Hs1 to Hs5 of the VCSEL, so as to suppress the loss caused by the light emitted from the VCSEL passing through. In addition, the exit point 50 can also be said to be the part with the strongest light emission from the emission surface of the VCSEL.

[0101] Furthermore, multiple apertures 55 are provided around each of the light-emitting elements Hs1 to Hs5 disposed in the surface-emitting laser element VCSEL. Here, eight apertures 55 are provided for each light-emitting element Hs1 to Hs5. The eight apertures 55 are provided around the emission outlet 50 in a manner that surrounds the emission outlet 50. Similarly to the stacked structure, the pDBR layer 81, n-gate layer 82, light-emitting layer 83, p-gate layer 84, and nDBR layer 85 are removed from the apertures 55. As described later, the current-blocking layer 81b is oxidized through the edge portion of the stacked structure 301 and the apertures 55 to form the current-blocking portion β. In addition, the edge portion of the stacked structure 301 refers to the end portion of the stacked structure 301 formed by removing the semiconductor stack. That is, the edge portion of the stacked structure 301 is the side of the stacked structure 301 that exposes the semiconductor stack.

[0102] Furthermore, an n-type ohmic electrode 321 (n-ohm electrode 321) disposed on the nDBR layer 85 (region 311) is designated as the cathode electrode. Additionally, the n-ohm electrode 321 is disposed between the ejection port 50 and the aperture 55 in a manner that surrounds the ejection port 50. Furthermore, a p-type ohmic electrode 331 (p-ohm electrode 331) disposed on the p-gate layer 84 exposed after removing the nDBR layer 85 is designated as the gate Gs1. The p-type ohmic electrode 331 is an example of a gate electrode that is electrically connected to each of the multiple light-emitting elements described later and controlled to simultaneously illuminate and extinguish the multiple light-emitting elements Hs.

[0103] Furthermore, the p-gate layer 84 is connected between multiple light-emitting elements Hs contained in the same VCSEL. However, in the light-emitting elements Hs contained in one VCSEL and the light-emitting elements Hs contained in other VCSELs, a hole 56 is formed between them in such a way that the p-gate layer 84 is not connected. For example, in the light-emitting elements Hs contained in VCSEL1 and the light-emitting elements Hs contained in the adjacent VCSEL2, a hole 56 is formed between them in such a way that the p-gate layer 84 is not connected.

[0104] The transmission thyristor T1 is composed of a stacked pDBR layer 81, an n-gate layer 82, a light-emitting layer 83, a p-gate layer 84, and an nDBR layer 85. Furthermore, the n-ohm electrode 323 disposed on the nDBR layer 85 (region 313) is designated as the cathode terminal. Moreover, the p-ohm electrode 332 disposed on the p-gate layer 84 exposed after removing the nDBR layer 85 is designated as the terminal of the gate Gt1 (sometimes labeled as gate terminal Gt1).

[0105] Similarly, the coupling diode D1 disposed in the stacked structure 302 is composed of a p-gate layer 84 and an nDBR layer 85. Furthermore, the n-ohm electrode 324 disposed on the nDBR layer 85 (region 314) is designated as the cathode terminal. Moreover, the p-ohm electrode 332 disposed on the p-gate layer 84 exposed after removing the nDBR layer 85 is designated as the anode terminal. Here, the anode terminal of the coupling diode D1 is the same as the gate Gt1 (gate terminal Gt1).

[0106] The power line resistor Rg1 disposed in the stacked structure 303 is composed of the p gate layer 84. That is, the power line resistor Rg1 is provided as a resistor between the p gate layer 84 exposed after removing the nDBR layer 85 and the p ohm electrode 333 and p ohm electrode 334 disposed on the p gate layer 84.

[0107] The startup diode SD disposed in the stacked structure 304 is composed of a p-gate layer 84 and an nDBR layer 85. That is, the startup diode SD has an n-ohm electrode 325 disposed on the nDBR layer 85 (region 315) as the cathode terminal. Moreover, the p-ohm electrode 335 disposed on the p-gate layer 84 exposed after removing the nDBR layer 85 is used as the anode terminal.

[0108] The current-limiting resistor R1 set in the stacked structure 305, the current-limiting resistor R2 set in the stacked structure 306, and the power line resistor Rg1 set in the stacked structure 303 are set in the same way, and the p gate layer 84 between the two p-ohm electrodes (unlabeled) is used as the resistor.

[0109] exist Figure 2 In section (a), the connection relationships between the components are explained.

[0110] The lighting signal line 75 has a main stem 75a and multiple branches 75b. The main stem 75a is configured to extend in the column direction of the surface-emitting laser element (VCSEL). The branches 75b branch from the main stem 75a and are connected to an n-ohm electrode 321, which serves as the cathode terminal of the VCSEL 1 provided in the stacked structure 301. The cathode terminals of other VCSELs are also the same.

[0111] The lighting signal line 75 is connected to the side of the surface-emitting laser element VCSEL1. Terminal connection.

[0112] The first transmission signal line 72 is connected to the n-ohm electrode 323, which serves as the cathode terminal of the transmission thyristor T1 disposed in the laminated structure 302. The first transmission signal line 72 is also connected to the cathode terminals of other odd-numbered transmission thyristors T disposed in the same laminated structure as 302. The first transmission signal line 72 is connected to the first transmission signal line 72 via a current-limiting resistor R1 disposed in the laminated structure 305. Terminal connection.

[0113] On the other hand, the second transmission signal line 73 is connected to the n-ohm electrode (unlabeled) of the cathode terminal of the transmission thyristor T, which is an even-numbered transistor located in the unlabeled stacked structure. The second transmission signal line 73 is connected to the stacked structure 306 via a current-limiting resistor R2. Terminal connection.

[0114] Power line 71 is connected to a p-ohm electrode 334, which is a terminal of power line resistor Rg1 disposed in the stacked structure 303. A terminal of the other power line resistor Rg is also connected to power line 71. Power line 71 is connected to the Vgk terminal.

[0115] Furthermore, the p-ohm electrode 331 (gate terminal Gs1) disposed on the stacked structure 301 is connected to the p-ohm electrode 332 (gate terminal Gt1) of the stacked structure 302 via the connection wiring 76.

[0116] Furthermore, the p-ohm electrode 332 (gate terminal Gt1) is connected to the p-ohm electrode 333 (another terminal of the power line resistor Rg1) of the stacked structure 303 via the connection wiring 77.

[0117] The n-ohm electrode 324 (cathode terminal of coupling diode D1) disposed in the stacked structure 302 is connected to the p-type ohm electrode (unlabeled) of the gate terminal Gt2 of the adjacent pass thyristor T2 via the connection wiring 79.

[0118] Although the explanation is omitted here, the same applies to other surface-emitting laser elements such as VCSELs, transfer thyristors (T), and coupling diodes (D).

[0119] The p-ohm electrode 332 (gate terminal Gt1) of the stacked structure 302 is connected to the n-ohm electrode 325 (cathode terminal of the start-up diode SD) disposed in the stacked structure 304 via the connection wiring 78. The p-ohm electrode 335 (anode terminal of the start-up diode SD) is connected to the second transmission signal line 73.

[0120] Furthermore, the above-described connection and structure are those used when using a p-type substrate 80; when using an n-type substrate, the polarity is reversed. Additionally, when using an i-type substrate, a terminal connected to the power supply line 200a supplying the reference potential Vsub is provided on the side of the substrate where the driving part 101 and the light-emitting part 102 are located. Moreover, the connection and structure are the same as in either the case using a p-type substrate or the case using an n-type substrate.

[0121] Here, refer to Figure 2 (b) describes the manufacturing method of the light-emitting component 10.

[0122] First, the pDBR layer 81, n-gate layer 82, light-emitting layer 83, p-gate layer 84, and nDBR layer 85 are sequentially epitaxially grown on a p-type substrate 80 to form a semiconductor stack. Here, p-type GaAs is used as an example for the substrate 80, but it can also be n-type GaAs or intrinsic (i)-type GaAs without impurities.

[0123] The DBR layer is composed of, for example, Al. 0.9 Ga 0.1 As with a high aluminum content and a low refractive index layer, such as Al 0.2 Ga 0.8 The structure consists of a combination of low-aluminum, high-refractive-index layers of As. The film thickness (optical path length) of each of the low-refractive-index and high-refractive-index layers is, for example, set to 0.25 (1 / 4) of the center wavelength. In addition, the Al composition ratio of the low-refractive-index layer to the high-refractive-index layer can be varied in the range of 0 to 1.

[0124] The pDBR layer 81 is formed by sequentially stacking a lower pDBR layer 81a, a current-restricting layer 81b, and an upper pDBR layer 81c (see below). Figure 4 (b)). The lower pDBR layer 81a and the upper pDBR layer 81c have, for example, an impurity concentration of 1×10⁻⁶. 18 / cm 3 The current-narrowing layer 81b is, for example, AlAs or p-type AlGaAs with a high concentration of Al impurities. Al is oxidized to form Al2O3, thereby increasing the resistance, which can be achieved by narrowing the current path.

[0125] nDBR layer 85, for example, has an impurity concentration of 1×10⁻⁵. 18 / cm 3 .

[0126] For example, the n-gate layer 82 has an impurity concentration of 1×10⁻⁶. 17 / cm 3 n-type Al 0.9 GaAs. The Al content can be varied within the range of 0 to 1.

[0127] The light-emitting layer 83 is a quantum well structure composed of alternating well layers and barrier layers. Examples of well layers include GaAs, AlGaAs, InGaAs, GaAsP, AlGaInP, GaInAsP, and GaInP, while barrier layers include AlGaAs, GaAs, GaInP, and GaInAsP. Alternatively, the light-emitting layer 83 can also be a quantum wire or a quantum dot.

[0128] For example, the p-gate layer 84 has an impurity concentration of 1×10¹⁷ / cm². 3 p-type Al 0.9 GaAs. The Al content can be varied within the range of 0 to 1.

[0129] These semiconductor layers are stacked, for example, by methods such as Metal-Organic Chemical Vapor Deposition (MOCVD) and Molecular Beam Epitaxy (MBE), to form a semiconductor stack.

[0130] Next, n-ohm electrodes 321, 323, 324, etc., are formed on the nDBR layer 85. The n-ohm electrodes (n-ohm electrodes 321, 323, 324, etc.) are, for example, Au (AuGe) containing Ge, which readily makes ohmic contact with the n-type semiconductor layer such as the nDBR layer 85. The n-ohm electrodes (n-ohm electrodes 321, 323, 324, etc.) are formed, for example, by a lift-off method.

[0131] Next, the nDBR layer 85, p-gate layer 84, light-emitting layer 83, n-gate layer 82, and pDBR layer 81 are etched sequentially to separate them into stacked structures 301, 302, etc. Simultaneously, the aperture 55 in the stacked structure 301 is formed. This etching can be performed using a sulfuric acid-based etching solution (by weight, sulfuric acid:hydrogen peroxide water:water = 1:10:300), or an anisotropic dry etching (RIE) using, for example, boron chloride. The etching that separates the stacked structures is sometimes referred to as mesa etching or post-etching.

[0132] Next, in the edge portion and hole portion 55 of the stacked structure, the exposed current-limiting layer 81b is oxidized from the side to form a current-blocking portion β. The oxidation of the current-limiting layer 81b is performed, for example, by oxidizing the Al in the current-limiting layer 81b, which is AlAs, AlGaAs, etc., using water vapor at 300–400°C. At this time, oxidation is performed from the exposed side to form a current-blocking portion β formed of Al₂O₃, which is an oxide of Al. The unoxidized portion of the current-limiting layer 81b becomes the current-passing portion α.

[0133] Next, the nDBR layer 85 is etched to expose the p-gate layer 84. This etching can be performed by wet etching using a sulfuric acid-based etchant (by weight, sulfuric acid:hydrogen peroxide water:water = 1:10:300), or by anisotropic dry etching using, for example, boron chloride. Then, p-ohmic electrodes (p-ohmic electrodes 331, 332, etc.) are formed on the p-gate layer 84. The p-ohmic electrodes are, for example, Au (AuZn) containing Zn, which readily makes ohmic contact with the p-type semiconductor layer such as the p-gate layer 84. Moreover, the p-ohmic electrodes (p-ohmic electrodes 331, 332, etc.) are formed, for example, by a stripping method.

[0134] Next, a protective layer 90 is formed by covering the surfaces of the laminated structures 301, 302, etc., using insulating materials such as SiO2, SiON, or SiN. Furthermore, through-holes (openings) are provided in the protective layer 90 above the n-ohm electrodes (n-ohm electrodes 321, 323, 324, etc.) and the p-ohm electrodes (p-ohm electrodes 331, 332, etc.). Additionally, wiring (power line 71, first transmission signal line 72, second transmission signal line 73, lighting signal line 75, etc.) connecting the n-ohm electrodes (n-ohm electrodes 321, 323, 324, etc.) and the p-ohm electrodes (p-ohm electrodes 331, 332, etc.) and a back electrode 89 are formed through the through-holes in the protective layer 90. The wiring and the back electrode 89 are made of materials such as Al and Au.

[0135] As described above, the light-emitting component 10 was manufactured.

[0136] Alternatively, substrate 80 can also be made of InP, GaN, InAs, other semiconductor substrates made of III-V or II-VI group materials, sapphire, Si, Ge, etc. When the substrate is changed, the material of the semiconductor stack monolithically layered on the substrate is a material whose lattice constant is substantially matched to that of the substrate (lattice constant and other lattice properties (including strain structure, strain relaxation layer, metamorphic growth, etc.)). For example, InAs, InAsSb, GaInAsSb, etc. are used on InAs substrates; InP, InGaAsP, etc. are used on InP substrates; GaN, AlGaN, InGaN are used on GaN or sapphire substrates; and Si, SiGe, GaP, etc. are used on Si substrates. However, when the semiconductor material is bonded to another support substrate after crystal growth, it is not necessary for the semiconductor material to be approximately lattice-matched relative to the support substrate.

[0137] (Layered structure of the light-emitting element Hs in a surface-emitting laser element VCSEL)

[0138] Figure 4 This is an enlarged view of the light-emitting element Hs in the light-emitting component 10 of this embodiment. Figure 4 (a) is a top view of the light-emitting element Hs. Figure 4 (b) is Figure 4 (a) A cross-sectional view along the IVB-IVB line. Figure 4 (c) is Figure 4 (a) A cross-sectional view along the IVC-IVC line.

[0139] like Figure 4 As shown in (a), eight holes 55 are provided around the light-emitting element Hs. These holes 55 are also referred to as grooves, hence the surface-emitting laser element VCSEL with this structure is also called a grooved type. Figure 4 As shown in (b), the via 55 is configured such that the nDBR layer 85, p-gate layer 84, light-emitting layer 83, n-gate layer 82, and pDBR layer 81 are removed by etching to reach the substrate 80. The current-restricting layer 81b disposed on the pDBR layer 81 is oxidized via the via 55. Thus, oxidation proceeds from the via 55 outwards from the center of the via 55. That is, the central portion surrounded by the eight vias 55 becomes the unoxidized portion (current-passing portion α).

[0140] like Figure 4 As shown in (b) and (c), except for the current passage portion α in the ejection port 50, the current narrowing layer 81b is oxidized from between adjacent holes 55 and from the outer side of the stacked structure 301.

[0141] Multiple apertures 55 are configured in a circular shape to surround the emission port 50, so that the planar shape of the unoxidized portion (current passage α) is close to circular. In a surface-emitting laser element VCSEL, the smaller the diameter of the emission port 50, the easier it is to oscillate in a single mode, and the easier it is for the intensity distribution to become a single peak. Therefore, it is preferable that the multiple apertures 55 are configured in a circular shape, and the current passage α is close to circular. That is, in this case, the current narrowing layer 81b is also formed in a circular shape around the apertures 55. Moreover, in order to form the current narrowing layer 81b in a circular shape, it can also be said that the apertures 55 are arranged in a circular manner with a predetermined interval around the emission port 50 where the light is emitted from the light-emitting element Hs.

[0142] The nDBR layer 85, p-gate layer 84, light-emitting layer 83, n-gate layer 82, and pDBR layer 81 outside the aperture 55 of the light-emitting element Hs function as setting thyristors for setting (controlling) the on / off state of the surface-emitting laser element VCSEL. Furthermore, the nDBR layer 85, p-gate layer 84, light-emitting layer 83, n-gate layer 82, and upper pDBR layer 81c, located above the current-narrowing layer 81b, function as current paths. Therefore, the larger the area outside the aperture 55 of the light-emitting element Hs, the smaller the resistance to the current flowing in the surface-emitting laser element VCSEL. Therefore, the number of apertures 55 can be set according to the shape of the unoxidized portion (current-passing portion α) and the path resistance of the current flowing in the surface-emitting laser element VCSEL. Additionally, the number of apertures 55 should be at least four. Furthermore, the planar shape of the apertures 55... Figure 4 In (a), it can be a square, but it can also be a circle, rectangle or other shapes.

[0143] Furthermore, preferably, the aperture 55 has a depth at its location that reaches at least to the lower surface of the p-type ohmic electrode 331, which serves as the gate electrode. That is, preferably, the aperture 55 at least penetrates the nDBR layer 85 and reaches the upper surface of the p-gate layer 84. This facilitates the separation of the light-emitting points of the multiple light-emitting components.

[0144] Furthermore, and more preferably, it has a depth reaching the lowest layer of the light-emitting element Hs with a thyristor structure. That is, the aperture 55 further preferably has a depth reaching the pDBR layer 81. Additionally, in Figure 4 In (b), it indicates that the hole 55 not only reaches the pDBR layer 81, but also penetrates the pDBR layer 81 to reach the substrate 80. Alternatively, the hole 55 may not penetrate the pDBR layer 81, but stop at the location where it reaches the pDBR layer 81. If configured in this way, the etching time is shortened; on the other hand, if it penetrates the pDBR layer 81, it is easier to separate the light-emitting points of the multiple light-emitting elements Hs.

[0145] In addition, such as Figure 4 As shown in (c), the p-gate layer 84 in the light-emitting element Hs forming the thyristor structure is connected as a common layer between the multiple light-emitting elements Hs via multiple holes 55. Furthermore, it is electrically connected to the p-type ohmic electrode 331, which serves as the gate electrode. That is, as... Figure 4 As shown in (b), although the p-gate layer 84 has a portion that is interrupted by the via 55, as Figure 4 As shown in (c), the parts without holes 55 are connected to each other, thus achieving electrical connection. Therefore, the p-gate layer 84, which serves as the upper gate layer of the thyristor, is connected as a common layer among the multiple light-emitting elements Hs, functioning as a common gate layer among the multiple light-emitting elements Hs. Furthermore, the upper gate layer refers to the upper gate layer of the two gate layers of the thyristor, and the lower gate layer refers to the lower gate layer of the two gate layers of the thyristor.

[0146] Furthermore, the uppermost nDBR layer 85, which forms the thyristor structure, is connected as a common layer between multiple light-emitting elements Hs via multiple vias 55. That is, as... Figure 4 As shown in (b), although the nDBR layer 85 has a portion that is interrupted by the hole 55, as Figure 4 As shown in (c), the parts where there are no holes 55 are connected to each other, thereby forming an electrical connection.

[0147] By adopting this structure, the switching efficiency of the p-type ohmic electrode 331 is improved. As a result, even if multiple light-emitting elements Hs are used, they can be made to light up and turn off at almost the same time. This can also be described as enabling multiple light-emitting elements Hs to light up and turn off at the same time.

[0148] Furthermore, the p-type ohmic electrode 331 is connected as a common layer in the area outside the periphery of the light-emitting element Hs. Figure 4 In cases (b) to (c), the p-type ohmic electrode 331 uniformly covers the area outside the periphery of the light-emitting element Hs. More specifically, the p-type ohmic electrode 331 is formed to cover the area outside the emission port 50, the n-type ohmic electrode 321, and the periphery of the hole 55 of the light-emitting element Hs.

[0149] By configuring it in this way, the transmission of the signal from the p-type ohmic electrode 331 becomes faster. As a result, even if multiple light-emitting elements Hs are used, they can be made to light up and turn off in almost the same amount of time.

[0150] Furthermore, the structure of the p-type ohmic electrode 331 in this embodiment is applicable not only to trench-type surface-emitting laser elements (VCSELs) but also to mesa-type surface-emitting laser elements (VCSELs).

[0151] Figure 5 This is an enlarged view of a mesa-type surface-emitting laser element (VCSEL).

[0152] The diagram shows a surface-emitting laser element, VCSEL, and Figure 4 Similar to the trench type, it consists of multiple light-emitting elements Hs. Here, five light-emitting elements Hs1 to Hs5 are illustrated. Furthermore, an emission outlet 50 is provided in the surface-emitting laser element VCSEL for emitting light from the light-emitting elements Hs1 to Hs5. On the other hand, with... Figure 4 Unlike other cases, no hole was formed at 55.

[0153] Figure 6 (a) to (b) are magnified views of the light-emitting element Hs in a mesa-type surface-emitting laser element VCSEL. Figure 6 (a) is a top view of the light-emitting element Hs. Figure 6 (b) is Figure 6 (a) A cross-sectional view along line VIB-VIB.

[0154] like Figure 6 As shown in (b), the light-emitting element Hs and Figure 4 The same situation is formed to form a thyristor structure, which is sequentially provided with a p-type DBR structure anode (DBR) layer 81 (pDBR layer 81), an n-type gate layer 82 (n gate layer 82), a light-emitting layer 83, a p-type gate layer 84 (p gate layer 84), and an n-type DBR structure cathode (DBR) layer 85 (nDBR layer 85).

[0155] Furthermore, the p-gate layer 84 is formed by sequentially stacking a lower p-gate layer 84a, a current-limiting layer 84b, and an upper p-gate layer 84c.

[0156] The pDBR layer 81, n-gate layer 82, p-gate layer 84, and nDBR layer 85 of the light-emitting element Hs function as a thyristor.

[0157] Furthermore, an n-type ohmic electrode 321 (n-ohm electrode 321) disposed on the nDBR layer 85 is designated as the cathode electrode. The n-ohm electrode 321 surrounds the ejection port 50. Additionally, an n-type ohmic electrode 336 (n-ohm electrode 336) disposed on the n-gate layer 82 (exposed by removing a portion of the upper side of the nDBR layer 85, p-gate layer 84, light-emitting layer 83, and n-gate layer 82) is designated as the gate electrode Gs1. The n-type ohmic electrode 336 is an example of a gate electrode.

[0158] In the mesa-type light-emitting element Hs, the p-gate layer 84, which serves as the upper p-type layer of the thyristor, and the nDBR layer 85, which serves as the upper n-type layer, are separated among the multiple light-emitting elements Hs. Furthermore, in the mesa-type light-emitting element Hs, a portion of the upper side of the n-gate layer 82, which serves as the lower gate layer, is further separated among the multiple light-emitting elements Hs. As a result, the n-gate layer 82 has a convex shape.

[0159] Then, the lower portion that is not broken and connected among the multiple light-emitting elements Hs is designated as the gate layer and connected to the n-ohm electrode 336, which serves as the gate electrode. Thus, the n-gate layer 82, which is the lower gate layer of the thyristor, is connected as a common layer among the multiple light-emitting elements Hs and functions as a common gate layer among them. That is, the n-gate layer 82 can be in a form where it is not broken entirely among the multiple light-emitting elements Hs; in this case, the n-gate layer 82 is entirely connected as a common layer among the multiple light-emitting elements Hs. Alternatively, the n-gate layer 82 can also be in a form where the upper portion is broken; in this case, the lower portion of the n-gate layer 82 is connected as a common layer among the multiple light-emitting elements Hs.

[0160] Furthermore, a current-restricting layer 81b is disposed as part of the p-gate layer 84, which is the interrupted p-layer of the thyristor. That is, the p-gate layer 84 has a current-restricting layer 81b in the convex portion that narrows the current flowing through the light-emitting layer 83.

[0161] Furthermore, in the mesa-type surface-emitting laser element VCSEL, as described above, a portion of the upper side of the n-gate layer 82, which is the lower gate layer, is further interrupted between the multiple light-emitting elements Hs. Thus, it can also be said that the interrupted portion functions as a current-restricting layer that narrows the current flowing through the light-emitting layer 83.

[0162] Furthermore, the n-type ohmic electrode 336 is connected as a common layer in the area outside the periphery of the light-emitting element Hs. Figure 6 In cases (a) to (b), the n-type ohmic electrode 336 uniformly covers the area outside the periphery of the light-emitting element Hs.

[0163] By adopting this structure, even in a mesa-type surface-emitting laser element (VCSEL), the signal transmission from the n-type ohmic electrode 336 is accelerated. As a result, even if multiple light-emitting elements Hs are used, they can be made to light up and turn off in almost the same amount of time.

[0164] Furthermore, the forms of the p-type ohmic electrode 331 and the n-type ohmic electrode 336 are not limited to... Figure 4 , 6The form is as follows: As long as the distance between each light-emitting element Hs and the p-type ohmic electrode 331 and n-type ohmic electrode 336, which serve as gate electrodes, is smaller than the distance between the farthest light-emitting elements Hs among the multiple light-emitting elements Hs.

[0165] Figure 7 (a)~(b) Figure 8 (c)~(d) Figure 9 (e) is a diagram representing various forms of the n-type ohmic electrode 336.

[0166] Furthermore, the following description uses the n-type ohmic electrode 336 as an example, but the same applies to the p-type ohmic electrode 331.

[0167] in, Figure 7 (a) indicates that with Figure 6 (a) The same n-type ohmic electrode 336. In this case, the distance between the farthest light-emitting elements Hs among the multiple light-emitting elements Hs1 to Hs5 is distance La1. Furthermore, the distance between the light-emitting elements Hs is the center-to-center distance between the light-emitting elements Hs. Additionally, the distance between each light-emitting element Hs and the n-type ohmic electrode 336, which serves as the gate electrode, is distance La2. The distance between the light-emitting element Hs and the n-type ohmic electrode 336 is the longest of the shortest distances between the center of each light-emitting element Hs and the edge of the ohmic electrode 336. In this case, La2 is smaller than La1 (La1>La2), and the above relationship holds.

[0168] also, Figure 7 (b) represents the case where the n-type ohmic electrode 336 covers half of the area surrounding the light-emitting elements Hs1 to Hs5. In this case, the distance between the farthest light-emitting elements Hs1 to Hs5 is distance Lb1. Furthermore, the distance between each light-emitting element Hs1 to Hs5 and the n-type ohmic electrode 336, which serves as the gate electrode, is distance Lb2. In this case, Lb2 is smaller than Lb1 (Lb1>Lb2), and the above relationship holds.

[0169] also, Figure 8 (c)~(d) Figure 9 (e) indicates the position where the n-type ohmic electrode 336 is adjacent to each light-emitting element Hs.

[0170] exist Figure 8In (c), the case where eight light-emitting elements Hs1 to Hs8 are arranged in a lattice pattern is shown. Furthermore, this case shows the case where the n-type ohmic electrode 336 is arranged in a lattice pattern surrounding the light-emitting elements Hs1 to Hs8. In this case, the distance between the farthest light-emitting elements Hs1 to Hs8 is distance Lc1. Furthermore, the distance between each light-emitting element Hs1 to Hs8 and the n-type ohmic electrode 336, which serves as the gate electrode, is distance Lc2. In this case, Lc2 is smaller than Lc1 (Lc1 > Lc2), and the above relationship holds true.

[0171] and then, Figure 8 (d) Figure 9 (e) indicates the case where the n-type ohmic electrodes 336 are connected as a common layer by forming a branch structure.

[0172] exist Figure 8 In (d), it is shown that the n-type ohmic electrode 336 reaches a position adjacent to each of the light-emitting elements Hs1 to Hs8, causing the n-type ohmic electrode 336 to branch. In this case, the distance between the farthest light-emitting elements Hs1 to Hs8 is distance Ld1. Furthermore, the distance between each light-emitting element Hs1 to Hs8 and the n-type ohmic electrode 336, which serves as the gate electrode, is distance Ld2. At this time, Ld2 is smaller than Ld1 (Ld1>Ld2), and the above relationship holds.

[0173] In addition, Figure 9 In (e), the n-type ohmic electrodes 336 are shown to alternately branch relative to the light-emitting elements Hs1 to Hs7 arranged on both sides. In this case, the distance between the farthest light-emitting elements Hs1 to Hs7 is distance Le1. Furthermore, the distance between each light-emitting element Hs1 to Hs7 and the n-type ohmic electrode 336, which serves as the gate electrode, is distance Le2. In this case, Le2 is smaller than Le1 (Le1>Le2), and the above relationship holds.

[0174] In the above Figure 7 (a)~(b) Figure 8 (c)~(d) Figure 9 In case (e), the transmission of the signal from the n-type ohmic electrode 336 is accelerated.

[0175] <thyristor>

[0176] Next, the basic operation of a thyristor (a surface-emitting laser element VCSEL, a transfer thyristor T) will be explained. As mentioned earlier, a thyristor is a semiconductor device with three terminals: an anode terminal (anode), a cathode terminal (cathode), and a gate terminal (gate). For example, it is constructed by stacking p-type semiconductor layers (pDBR layer 81, p-gate layer 84) and n-type semiconductor layers (n-gate layer 82, nDBR layer 85) formed of GaAs, GaAlAs, AlAs, etc., on a substrate 80. That is, the thyristor is a pnpn structure. Here, as an example, the forward potential (diffusion potential) Vd of the pn junction formed by the p-type semiconductor layer and the n-type semiconductor layer will be set to 1.5V for explanation.

[0177] Hereinafter, as an example, the back electrode 89 (refer to) which serves as the Vsub terminal will be applied. Figure 2 The reference potential Vsub supplied is set to 0V as a high level potential (hereinafter referred to as "H"), and the power supply potential Vgk supplied to the Vgk terminal is set to -5V as a low level potential (hereinafter referred to as "L"). Therefore, there are cases where it is written as "H" (0V) and "L" (-5V).

[0178] First, the operation of a single thyristor will be explained. Here, it is assumed that the anode of the thyristor is 0V.

[0179] In a thyristor in the off-state where no current flows between the anode and cathode, if a potential lower than the threshold voltage (a negative potential with a large absolute value) is applied to the cathode, it will transition to the on-state (conduction). Here, the threshold voltage of the thyristor is the value obtained by subtracting the forward potential Vd (1.5V) of the pn junction from the potential of the gate.

[0180] When the thyristor is in the ON state, the gate of the thyristor becomes a potential close to that of the anode terminal. Here, the anode is 0V, so it is assumed that the gate is 0V. Furthermore, the cathode of the thyristor in the ON state becomes a potential close to that obtained by subtracting the forward potential Vd (1.5V) of the pn junction from the anode potential. Here, the anode is 0V, so the cathode of the thyristor in the ON state becomes a potential close to -1.5V (a negative potential with an absolute value greater than 1.5V). Additionally, the cathode potential is set according to the relationship with the power supply that provides current to the thyristor in the ON state.

[0181] In a thyristor in the on state, if the cathode becomes a potential higher than the potential required to maintain the on state (a potential close to -1.5V mentioned above) (a negative potential with a small absolute value, 0V, or a positive potential), it will switch to the off state (turn off).

[0182] On the other hand, if a potential lower than that required to maintain the conduction state (a negative potential with a large absolute value) is continuously applied to the cathode of the thyristor in the conducting state, and a current capable of maintaining the conduction state (maintaining current) is supplied, the thyristor will maintain the conducting state.

[0183] Furthermore, the voltage shown above is an example and varies depending on the emission wavelength and intensity of the surface-emitting laser element (VCSEL). In this case, the illumination signal is adjusted. The potential ("L") is sufficient.

[0184] Furthermore, since thyristors are made of semiconductors such as GaAs, light emission occurs between the n-gate layer 82 and the p-gate layer 84 when the thyristor is in the on state. The amount of light emitted by the thyristor is determined by the area of ​​the cathode and the current flowing between the cathode and anode. Therefore, when light emission from the thyristor is not needed, unwanted light can be suppressed, for example, by reducing the area of ​​the cathode or by using materials that form the electrodes or wiring to block light.

[0185] (Action of the light-emitting component 10)

[0186] Next, the operation of the light-emitting component 10 will be explained.

[0187] <Sequence Diagram>

[0188] Figure 10 This is a timing diagram illustrating the operation of the light-emitting component 10.

[0189] exist Figure 10 The diagram shows the timing sequence for controlling the lighting (oscillation) or non-lighting of the five surface-emitting laser elements VCSELs (VCSEL1 to VCSEL5) of the light-emitting component 10 (referred to as lighting control). Additionally, in... Figure 10 In the process, the surface-emitting laser elements VCSEL1, VCSEL2, VCSEL3, and VCSEL5 of the light-emitting component 10 are lit, while the surface-emitting laser element VCSEL4 is turned off (not lit).

[0190] exist Figure 10 In the above, it is assumed that the time intervals are passed in alphabetical order from time a to time k. Surface-emitting laser element VCSEL1 is controlled to be lit or not lit during period T(1) (lighting control), surface-emitting laser element VCSEL2 is controlled to be lit or not lit during period T(2) (lighting control), surface-emitting laser element VCSEL3 is controlled to be lit or not lit during period T(3) (lighting control), and surface-emitting laser element VCSEL4 is controlled to be lit or not lit during period T(4) (lighting control). Hereinafter, the lighting control of surface-emitting laser elements VCSELs numbered 5 and above is performed in the same manner.

[0191] Here, let periods T(1), T(2), T(3), ... be periods of the same length, which are called periods T when they are not distinguished.

[0192] Send to Terminal (refer to Figure 1 , Figure 2 The first transmitted signal and sent to Terminal (refer to Figure 1 , Figure 2 The second transmission signal It is a signal with two potentials: "H" (0V) and "L" (~5V). Furthermore, the first transmitted signal... and the second transmitted signal The waveform is repeated in units of two consecutive periods T (e.g., period T(1) and period T(2)).

[0193] The following cases exist where "H" (0V) and "L" (-5V) are omitted and replaced with "H" and "L".

[0194] First signal transmission At the beginning time b of period T(1), the signal changes from “H” (0V) to “L” (-5V), and at time f, the signal changes from “L” to “H”. Then, at the end time i of period T(2), the signal changes from “H” to “L”.

[0195] Second signal transmission At the beginning of period T(1), time b is “H” (0V), and at time e, it transitions from “H” (0V) to “L” (-5V). Then, between the end of period T(2) and time j, it transitions from “L” to “H”.

[0196] If we compare the first transmitted signal With the second transmission signal Then the second transmitted signal Corresponding to the first transmitted signal The signal obtained by shifting backward by a period T on the time axis. On the other hand, regarding the second transmitted signal... The waveform represented by the dashed line during period T(1) and the waveform during period T(2) are repeated after period T(3). Second transmitted signal. The waveform during period T(1) is different from the waveform after period T(3) because period T(1) is the period during which the light-emitting component 10 starts to operate.

[0197] As described later, the first signal is transmitted. With the second transmission signal A set of transmission signals propagates the conduction state of the thyristor T in numerical order, thereby designating the surface-emitting laser element VCSEL with the same number as the conduction thyristor T as the object to be lit (oscillated) or not lit (lit control).

[0198] Next, regarding the data sent to the light-emitting component 10... Terminal illumination signal Explanation. Light-up signal. It is a signal with two potentials: "H" (0V) and "L" (-5V).

[0199] Here, during the lighting control period T(1) of the surface-emitting laser element VCSEL1 of the light-emitting component 10, the lighting signal is... Explanation. Light-up signal. During the period T(1), the initial time b is “H” (0V), and at time c it transitions from “H” (0V) to “L” (-5V). Then, at time d it transitions from “L” to “H”, and at time e it remains “H”.

[0200] Reference Figure 1 ,according to Figure 10 The timing diagram shown illustrates the operation of the light-emitting component 10. Furthermore, the periods T(1) and T(2) for controlling the illumination of the surface-emitting laser elements VCSEL1 and VCSEL2 are explained below.

[0201] (1) Time a

[0202] At time a, the reference potential supply unit 160 of the signal generation circuit 110 of the light-emitting component 10 sets the reference potential Vsub to "H" (0V). The power supply potential supply unit 170 sets the power supply potential Vgk to "L" (-5V). Therefore, the power supply line 200a of the light-emitting component 10 becomes "H" (0V) of the reference potential Vsub, and the Vsub terminal of the light-emitting component 10 becomes "H". Similarly, the power supply line 200b becomes "L" (-5V) of the power supply potential Vgk, and the Vgk terminal of the light-emitting component 10 becomes "L" (see reference). Figure 1 Therefore, the power line 71 of the light-emitting component 10 becomes "L" (see reference). Figure 1 ).

[0203] Then, the transmission signal generation unit 120 of the signal generation circuit 110 transmits the first transmission signal. and the second transmission signal They are respectively set to "H" (0V). Therefore, the first transmission signal line 201 and the second transmission signal line 202 become "H" (refer to...). Figure 1 Therefore, the light-emitting component 10 Terminals and The terminal becomes "H". Via current-limiting resistor R1 and... The potential of the first transmission signal line 72 connected to the terminal becomes "H", which is transmitted through the current limiting resistor R2 and... The potential of the second transmission signal line 73 connected to the terminal is also called "H" (see reference). Figure 1 ).

[0204] Furthermore, the lighting signal generation unit 140 of the signal generation circuit 110 will generate a lighting signal. They are each set to "H" (0V). Therefore, signal line 204 becomes "H" (refer to...). Figure 1 Therefore, the light-emitting component 10 The terminal becomes "H" via the current-limiting resistor RI, and... The terminal connection for the lighting signal line 75 is also designated as "H" (0V) (see reference). Figure 1 ).

[0205] The anode (pDBR layer 81) of the surface-emitting laser element VCSEL is connected to the Vsub terminal set to "H".

[0206] The anode (pDBR layer 81) of the thyristor T is connected to the Vsub terminal set to "H".

[0207] The cathodes of the odd-numbered transfer thyristors T1, T3, T5, ... are each connected to the first transfer signal line 72 and set to "H" (0V). The cathodes of the even-numbered transfer thyristors T2, T4, T6, ... are each connected to the second transfer signal line 73 and set to "H". Therefore, both the anode and cathode of the transfer thyristor T are "H" and are in the off state.

[0208] The cathode terminal of the surface-emitting laser element VCSEL is connected to the "H" (0V) illumination signal line 75. Therefore, both the anode and cathode of the surface-emitting laser element VCSEL are simultaneously "H" and in the off state.

[0209] As mentioned earlier, the gate Gt1 is connected to the cathode of the startup diode SD. The gate Gt1 is connected to the power supply line 71 at the power supply potential Vgk (“L” (-5V)) via the power supply line resistor Rg1. Furthermore, the anode terminal of the startup diode SD is connected to the second transmission signal line 73 and, via the current-limiting resistor R2, to the “H” (0V) power supply line. Terminal connections. Therefore, the startup diode SD is forward biased, and the cathode (gate Gt1) of the startup diode SD becomes -1.5V, obtained by subtracting the forward potential Vd (1.5V) of the pn junction from the potential of the anode ("H" (0V)) of the startup diode SD. Furthermore, if the gate Gt1 becomes -1.5V, then the anode (gate Gt1) of the coupling diode D1 is -1.5V, and the cathode is connected to the power line 71 ("L" (-5V)) via the power line resistor Rg2, thus becoming forward biased. Therefore, the potential of the gate Gt2 becomes -3V, obtained by subtracting the forward potential Vd (1.5V) of the pn junction from the potential of the gate Gt1 (-1.5V). Moreover, the anode (gate Gt1) of the coupling diode D2 is -3V, and the cathode is connected to the power line 71 ("L" (-5V)) via the power line resistor Rg3, thus becoming forward biased. Therefore, the potential of gate Gt3 becomes -4.5V, obtained by subtracting the forward potential Vd (1.5V) of the pn junction from the potential of gate Gt2 (-3V). However, gate Gts numbered 4 and above are not affected by the anode of the startup diode SD being "H" (0V), and the potential of these gate Gts becomes "L" (-5V), which is the potential of the power supply line 71.

[0210] Furthermore, since gate Gt is gate Gs, the potential of gate Gs is the same as that of gate Gt. Therefore, the threshold voltage of the surface-emitting laser element VCSEL and the transfer thyristor T is the value obtained by subtracting the forward potential Vd (1.5V) of the pn junction from the potentials of gates Gt and Gs. That is, the threshold voltage of transfer thyristor T1 is -3V, the threshold voltage of surface-emitting laser element VCSEL2 and the transfer thyristor T2 is -4.5V, the threshold voltage of surface-emitting laser element VCSEL3 and the transfer thyristor T3 is -6V, and the threshold voltage of surface-emitting laser elements VCSELs and transfer thyristors T numbered 4 and above is -6.5V.

[0211] (2) Time b

[0212] exist Figure 10 At time b, the first transmitted signal is shown. The voltage shifts from "H" (0V) to "L" (-5V). This activates the light-emitting component 10.

[0213] If the first transmission signal The voltage of the first transmission signal line 72 changes from "H" to "L" via... The terminal and current-limiting resistor R1 are switched from "H" (0V) to "L" (-5V). Therefore, the voltage applied to the transfer thyristor T1 is -3.3V, and thus the transfer thyristor T1, with a threshold voltage of -3V, is turned on. With the transfer thyristor T1 turned on, the potential of the first transfer signal line 72 becomes a potential close to -3.2V (a negative potential with an absolute value greater than 3.2V) obtained by subtracting the positive potential Vd (1.5V) of the pn junction from the potential of the anode of the transfer thyristor T1.

[0214] Furthermore, the threshold voltage of transfer thyristor T3 is -6V, and the threshold voltage of transfer thyristors T with odd numbers above 5 is -6.5V. The voltage applied to transfer thyristor T3 and transfer thyristors T with odd numbers above 5 is -1.5V, which is obtained by adding -3.2V to the voltage applied to the surface-emitting laser element VCSEL (1.7V). Therefore, transfer thyristor T3 and transfer thyristors T with odd numbers above 5 are not conducting.

[0215] On the other hand, due to the second transmission signal Since the second transmission signal line 73 is "H" (0V) and the second transmission signal line 73 is "H" (0V), the even-numbered transmission thyristor T cannot be turned on.

[0216] If the pass thyristor T1 is turned on, the potential of the gate Gt1 / Gs1 becomes "H" (0V), which is the potential of the anode of the pass thyristor T1. Then, the potential of the gate Gt2 (gate Gs2) becomes -1.5V, the potential of the gate Gt3 (gate Gs3) becomes -3V, the potential of the gate Gt4 (gate Gs4) becomes -4.5V, and the potential of the gate Gt (gate G1) numbered 5 or above becomes "L".

[0217] Therefore, the threshold voltage of the surface-emitting laser element VCSEL1 becomes -1.5V, the threshold voltage of the transfer thyristor T2 and surface-emitting laser element VCSEL2 becomes -3V, the threshold voltage of the transfer thyristor T3 and surface-emitting laser element VCSEL3 becomes -4.5V, the threshold voltage of the transfer thyristor T4 and surface-emitting laser element VCSEL4 becomes -6V, and the threshold voltage of the transfer transistor T and surface-emitting laser element VCSEL numbered 5 and above becomes -6.5V.

[0218] However, the first transmission signal line 72 is -1.5V due to the conducting thyristor T1, therefore the odd-numbered transmission thyristors T in the off state are not conducting. The second transmission signal line 73 is "H" (0V), therefore the even-numbered transmission thyristors T are not conducting. Since the lighting signal line 75 is "H" (0V), no surface-emitting laser element (VCSEL) is lit.

[0219] Immediately after time b (this refers to the time when the thyristor and other components change due to the signal potential change at time b and then reach a stable state. The same applies to other cases), the transmission thyristor T1 is in the conducting state, while the other transmission thyristors T1 and the surface-emitting laser element VCSEL are in the off state.

[0220] (3) Time c

[0221] At time c, the signal is lit. Shift from "H" (0V) to "L" (-5V).

[0222] If the signal is lit Switching from "H" to "L" illuminates signal line 75 via current-limiting resistor RI and... The terminal is switched from "H" (0V) to "L" (-5V). This increases the voltage applied to the surface-emitting laser element (VCSEL) by 1.7V, resulting in a -3.3V voltage applied to VCSEL1. VCSEL1, with a threshold voltage of -1.5V, then conducts and illuminates. Consequently, the potential of the illumination signal line 75 becomes close to -3.2V. Furthermore, while the threshold voltage of VCSEL2 is -3V, the voltage applied to VCSEL2 is reduced to -1.5V (the voltage obtained by adding the 1.7V applied to VCSEL1 to -3.2V), therefore VCSEL2 does not conduct.

[0223] Immediately after time c, the transmission thyristor T1 and the surface-emitting laser element VCSEL1 are in the conducting state, and the surface-emitting laser element VCSEL1 is lit (emitting light).

[0224] (4) Time d

[0225] At time d, the signal is lit. Shift from "L" (-5V) to "H" (0V).

[0226] If the signal is lit When switching from "L" to "H", the potential of the lighting signal line 75 is controlled by the current-limiting resistor RI and... The terminal shifts from -3.2V to "H". Therefore, the anode of the surface-emitting laser element VCSEL1 becomes "H", and thus the surface-emitting laser element VCSEL1 is turned off (becomes non-lit). The lighting period of the surface-emitting laser element VCSEL1 is as follows: from the lighting signal... From the moment c when the signal transitions from "H" to "L" until the signal is lit... The lighting signal up to time d when the signal transitions from "L" to "H". The period is "L".

[0227] Immediately after time d, the transmission thyristor T1 is in the on state.

[0228] (5) Time e

[0229] At time e, the second signal is transmitted. The voltage level shifts from "H" (0V) to "L" (-5V). At this point, the period T(1) for controlling the illumination of the surface-emitting laser element VCSEL1 ends, and the period T(2) for controlling the illumination of the surface-emitting laser element VCSEL2 begins.

[0230] If the second transmission signal The voltage of the second transmission signal line 73 changes from "H" to "L" via... The terminal is switched from "H" to "L". As described above, since the threshold voltage becomes -3V, the transmission thyristor T2 is turned on.

[0231] Therefore, the potential of gate terminal Gt2 (gate terminal Gs2) becomes "H" (0V), the potential of gate Gt3 (gate Gs3) becomes -1.5V, the potential of gate Gt4 (gate Gs4) becomes -3V, and the potential of gate Gt5 (gate Gs5) becomes -4.5V. Then, the potential of gate Gt (gate Gs) numbered 6 and above becomes -5V.

[0232] Immediately after time e, the transmission thyristors T1 and T2 are in the on state.

[0233] (6) Time f

[0234] At time f, the first signal is transmitted. Shift from "L" (-5V) to "H" (0V).

[0235] If the first transmission signal The voltage of the first transmission signal line 72 is transferred from "L" to "H". The terminal is switched from "L" to "H". Thus, the anode and cathode of the conducting thyristor T1 simultaneously become "H" and are turned off.

[0236] Therefore, the potential of gate Gt1 (gate Gs1) changes to the power supply potential Vgk ("L" (-5V) of power supply line 71 via power supply line resistor Rg1. Consequently, coupling diode D1 is in a state where a potential is applied in the direction where current does not flow (reverse bias). Therefore, the effect of gate Gt2 (gate Gs2) being "H" (0V) does not affect gate Gt1 (gate Gs1). That is, even if the threshold voltage becomes -6.5V, the first transmission signal... Or the second transmission signal When the voltage becomes "L" (-5V), the thyristor T with the gate Gt connected to the coupling diode D under reverse bias is also not turned on.

[0237] Immediately after time f, the transmission thyristor T2 is in the on state.

[0238] (7) Other

[0239] At time g, if the signal is lit When the voltage changes from "H" (0V) to "L" (-5V), the surface-emitting laser element VCSEL2, which is the same as VCSEL1 at time c, is turned on and illuminated.

[0240] Then, at time h, if the light-up signal is activated... When the voltage changes from "L" (-5V) to "H" (0V), the surface-emitting laser element VCSEL2 turns off, just like the surface-emitting laser element VCSEL1 at time d.

[0241] Furthermore, at time i, if the first transmitted signal When the voltage changes from "H" (0V) to "L" (-5V), the transfer thyristor T3 with a threshold voltage of -3V turns on, similar to the transfer thyristor T1 at time b or the transfer thyristor T2 at time e. At time i, the period T(2) for controlling the illumination of the surface-emitting laser element VCSEL2 ends, and the period T(3) for controlling the illumination of the surface-emitting laser element VCSEL3 begins.

[0242] Then, repeat the steps described above.

[0243] Additionally, when the VCSEL (Video Surface Emitting Laser) element is kept off (not lit), such as Figure 10 The lighting signal shown at time j to time k during the period T(4) for controlling the lighting of the VCSEL4 light-emitting element on the opposite side. That way, the signal will be lit. Simply keep it at "H" (0V). With this setting, even if the threshold voltage of the surface-emitting laser element VCSEL4 is -1.5V, the surface-emitting laser element VCSEL4 will not conduct and will remain off (not lit).

[0244] As explained above, the gate terminals Gt of the transfer thyristor T are connected to each other via coupling diode D. Therefore, if the potential of the gate Gt changes, the potential of the gate Gt connected to the changed gate Gt via the forward-biased coupling diode D also changes. Then, the threshold voltage of the transfer thyristor T with the changed gate potential changes. If the threshold voltage is higher than -3.3V (a negative value with a small absolute value), the transfer thyristor T transmits the first signal... Or the second transmission signal The circuit is activated when the voltage transitions from "H" (0V) to "L" (-5V).

[0245] Then, in the on-state, the threshold voltage of the VCSEL (Video Surface Emitting Laser) with gate Gs connected to gate Gt of the transmission thyristor T is -1.5V. Therefore, if the lighting signal... When the voltage is switched from "H" (0V) to "L" (-5V), the circuit is turned on, and the surface-emitting laser element VCSEL lights up (emits light).

[0246] That is, by transmitting the thyristor T to the on state, the "L" (-5V) lighting signal is sent to the surface-emitting laser element VCSEL, which is designated as the object to be lit. Turn on the surface-emitting laser element (VCSEL), which is the object to be lit, and make the surface-emitting laser element (VCSEL) light up (emit light).

[0247] Additionally, the "H" (0V) light-up signal The surface-emitting laser element (VCSEL) is kept in the off state, and the VCSEL is kept in a non-lit state. That is, the lighting signal... Set the on (illuminate) / off (non-illuminate) state of the surface-emitting laser element (VCSEL).

[0248] In this way, the lighting signal is set according to the image data. Controls whether the VCSELs (Variable Cell Lasers) on each surface are lit or not.

[0249] As explained above, the light-emitting component 10 is configured as a self-scanning light-emitting element array (SLED: Self-Scanning Light Emitting Diode).

[0250] Based on the method detailed above, the lighting and extinguishing of multiple arrayed light-emitting elements Hs can be synchronized.

[0251] Furthermore, in the example above, a surface-emitting laser element VCSEL was shown as the light-emitting element Hs, but it is not limited to this. For example, a light-emitting thyristor can also be used as the light-emitting element Hs.

[0252] Furthermore, in the example described above, the current-limiting layer is disposed on the pDBR layer 81 or the p-gate layer 84, but it can be disposed on any layer other than the light-emitting layer 83. However, it is preferable to dispose of it on a p-type layer compared to an n-type layer. Moreover, it is preferable to dispose of it on a layer closer to the light-emitting layer 83.

[0253] (Modified Example)

[0254] In a modified example, the aforementioned light-emitting component 10 is used as the light-emitting chip C. That is, the structure in which the light-emitting component 10 is mounted is formed into a chip shape. Next, the case where the light-emitting chips C are arranged in a row to form a light-emitting device 65 will be further described.

[0255] Figure 11 This is a top view of a light-emitting device 65 equipped with a light-emitting chip C using a light-emitting component 10.

[0256] exist Figure 11 In the light-emitting device 65 shown as an example, the light source unit 63 has light-emitting chips C1 to C40 (hereinafter referred to as light-emitting chips C if no distinction is made) arranged in two rows in an alternating pattern in the X direction on the circuit board 62, which are examples of 40 light-emitting components. The structure of the light-emitting chips C1 to C40 can also be the same.

[0257] In this specification, "~" indicates multiple constituent elements distinguished by number, referring to the constituent elements listed before and after "~" and the constituent elements numbered between them. For example, light-emitting chips C1 to C40 include light-emitting chips C1 to C40 in numerical order.

[0258] In addition, in this modified example, a total of 40 light-emitting chips C are used, but it is not limited to this.

[0259] Furthermore, the light-emitting device 65 is equipped with a signal generation circuit 110 for driving the light-emitting chip C. The signal generation circuit 110 is an example of a driving unit for inputting and outputting signals that drive the light-emitting chip C. The signal generation circuit 110 is, for example, composed of an integrated circuit (IC). Alternatively, the light-emitting device 65 may not be equipped with the signal generation circuit 110. In this case, the signal generation circuit 110 is located outside the light-emitting device 65 and supplies control signals for controlling the light-emitting chip C via wires or the like. Here, we will assume that the light-emitting device 65 includes the signal generation circuit 110 for explanation.

[0260] Figure 12 This is a diagram illustrating an example of the structure of the light-emitting chip C, the structure of the signal generation circuit 110 of the light-emitting device 65, and the structure of the wiring (lines) on the circuit board 62. Figure 12 (a) represents the structure of the light-emitting chip C. Figure 12(b) shows the structure of the signal generation circuit 110 of the light-emitting device 65 and the structure of the wiring (lines) on the circuit board 62. Additionally, Figure 12 (b) represents the portion of light-emitting chips C1 to C9 in the light-emitting chips C1 to C40.

[0261] First of all, Figure 12 The structure of the light-emitting chip C shown in (a) will be explained.

[0262] The light-emitting chip C has a light-emitting portion 102 on the surface of a rectangular substrate 80. This light-emitting portion 102 is configured to include a plurality of surface-emitting laser elements (VCSELs 1 to 128) arranged in a row along the long side near one of the long sides. The plurality of surface-emitting laser elements (VCSELs) is an example of a row of light-emitting components arranged in the main scanning direction. Furthermore, the light-emitting chip C has terminals at both ends of the long side of the substrate 80 surface, serving as multiple bonding pads for acquiring various control signals, etc. terminal, Terminal, Vgk terminal, Terminals). Furthermore, these terminals begin from one end of the substrate 80 according to... terminal, The terminals are arranged in the following order, starting from the other end of the substrate 80, according to the Vgk terminal, ... The terminals are arranged in a specific order. Furthermore, the light-emitting part 102 is positioned... Terminals and Between the terminals. Furthermore, a back electrode 89 is provided on the back side of the substrate 80 (see reference). Figure 2 ) is used as a Vsub terminal. Here, on the surface of the substrate 80, the arrangement direction of the surface-emitting laser elements VCSEL1 to VCSEL128 is set as the x-direction, and the direction orthogonal to the x-direction is set as the y-direction.

[0263] Furthermore, "lists" are not limited to, for example... Figure 12 As shown in (a), multiple surface-emitting laser elements (VCSELs) can be arranged in a straight line, or they can be arranged with different offsets relative to a direction orthogonal to the column direction. For example, each VCSEL can be arranged with an offset in a direction orthogonal to the column direction. Furthermore, adjacent VCSELs can be arranged alternately, or each VCSEL can be arranged in a zigzag pattern.

[0264] Next, according to Figure 12 (b) will describe the structure of the signal generation circuit 110 of the light-emitting device 65 and the structure of the wiring (lines) on the circuit board 62.

[0265] As described above, a signal generation circuit 110 and light-emitting chips C1 to C40 are mounted on the circuit board 62 of the light-emitting device 65, and wiring (lines) connecting the signal generation circuit 110 and the light-emitting chips C1 to C40 are provided.

[0266] First, the structure of the signal generation circuit 110 will be explained.

[0267] Various data and control signals are input to the signal generation circuit 110. Based on these various data and control signals, the signal generation circuit 110 performs data rearrangement, light quantity correction, etc.

[0268] Then, the signal generation circuit 110 includes a transmission signal generation unit 120, which sends a first transmission signal to the light-emitting chips C1 to C40 according to various control signals. Second signal transmission

[0269] Furthermore, the signal generation circuit 110 includes a lighting signal generation unit 140, which sends lighting signals to the light-emitting chips C1 to C40 respectively according to various control signals. (Unless otherwise distinguished, it is recorded as a lighting signal) ).

[0270] In addition, the signal generation circuit 110 includes a reference potential supply unit 160 and a power supply potential supply unit 170. The reference potential supply unit 160 supplies a reference potential Vsub, which serves as a potential reference, to the light-emitting chips C1 to C40, and the power supply potential supply unit 170 supplies a power supply potential Vgk for driving the light-emitting chips C1 to C40.

[0271] Next, the arrangement of the light-emitting chips C1 to C40 will be explained.

[0272] Odd-numbered light-emitting chips C1, C3, C5, ... are arranged in a row with intervals along the long side of each substrate 80. Even-numbered light-emitting chips C2, C4, C6, ... are also arranged in a row with intervals along the long side of each substrate 80. Furthermore, the odd-numbered light-emitting chips C1, C3, C5, ... and the even-numbered light-emitting chips C2, C4, C6, ... are arranged alternately with their long sides facing each other on the light-emitting portion 102 side of the light-emitting chip C, rotated 180° relative to each other. Moreover, surface-emitting laser elements (VCSELs) are positioned between the light-emitting chips C at predetermined intervals along the main scanning direction (X direction). Additionally, in... Figure 12 In (b) of the light-emitting chips C1 to C40, arrows are used to indicate... Figure 12The direction of the arrangement of the surface-emitting laser elements (VCSELs) of the light-emitting part 102 shown in (a) (numbering order of surface-emitting laser elements VCSEL1 to VCSEL128).

[0273] The wiring (lines) connecting the signal generation circuit 110 and the light-emitting chips C1 to C40 is described.

[0274] A power line 200a is provided on the circuit board 62, and the power line 200a connects to the back electrode 89, which is a Vsub terminal provided on the back side of the substrate 80 of the light-emitting chip C (see reference). Figure 2 Connect and supply the reference potential Vsub.

[0275] Furthermore, a power line 200b is provided on the circuit board 62, which is connected to the Vgk terminal provided on the light-emitting chip C and supplies a power potential Vgk for driving.

[0276] A first signal transmission line 201 and a second signal transmission line 202 are provided on the circuit board 62. The first signal transmission line 201 is used to transmit a signal. The signal generated from the signal generation unit 120 of the signal generation circuit 110 is sent to the light-emitting chips C1 to C40. The terminal, the second transmission signal line 202, is used to transmit the second transmission signal. The signal generated from the signal generation unit 120 of the signal generation circuit 110 is sent to the light-emitting chips C1 to C40. Terminal. First signal transmission. Second signal transmission They are sent together (in parallel) to the light-emitting chips C1 to C40.

[0277] Furthermore, a lighting signal line 204-1 to 204-40 (hereinafter referred to as lighting signal line 204 unless otherwise specified) is provided on the circuit board 62. The lighting signal lines 204-1 to 204-40 transmit the lighting signal through the current limiting resistor RI. The lighting signal is sent from the lighting signal generation unit 140 of the signal generation circuit 110 to each of the light-emitting chips C1 to C40. terminal.

[0278] As explained above, the reference potential Vsub and the power supply potential Vgk are jointly supplied to all the light-emitting chips C1 to C40 on the circuit board 62. First signal transmission. Second signal transmission These signals are also sent together (in parallel) to the light-emitting chips C1 to C40. On the other hand, the lighting signal... They are sent separately to the light-emitting chips C1 to C40.

[0279] [Optical measuring device 1]

[0280] The aforementioned light-emitting device 65 can be used for optical measurement.

[0281] Figure 13 This is a diagram illustrating the optical measuring device 1 that uses the light-emitting device 65.

[0282] The optical measuring device 1 includes the aforementioned light-emitting device 65, a light-receiving unit 11, and a data processing unit 12. Furthermore, a measurement object (object) 13 is placed opposite the optical measuring device 1. Figure 13 In this case, as an example, the object of measurement 13 is a person. Furthermore, Figure 13 This is a view taken from above.

[0283] The light-emitting device 65 illuminates the surface-emitting laser element VCSEL as described above. As shown by the solid line, the light irradiation direction is moved vertically around the light-emitting device 65, and the light is emitted in a straight line in the horizontal direction in the figure. That is, the light scans and irradiates the measurement object 13.

[0284] The light-receiving unit 11 is a device that receives light reflected by the object being measured 13. The light-receiving unit 11 receives light directed towards it, as shown by the dashed line. The light-receiving unit 11 can be a camera device that receives light from a two-dimensional direction.

[0285] The processing unit 12 is configured as a computer with an input / output unit for inputting and outputting data. Then, the processing unit 12 processes light-related information and calculates the distance to the object to be measured 13 or the three-dimensional shape of the object to be measured 13.

[0286] The processing unit 12 of the optical measuring device 1 controls the light-emitting device 65 to emit light. Then, based on the time difference between the timing of the light emitted by the light-emitting device 65 and the timing of the time the light-receiving unit 11 receives the reflected light from the object being measured 13, the processing unit 12 calculates the length of the optical path from the light emitted by the light-emitting device 65 to the light-receiving unit 11 after reflection from the object being measured 13. The positions of the light-emitting device 65 and the light-receiving unit 11, or the interval between them, are predetermined. Therefore, the processing unit 12 measures (calculates) the distance from the light-emitting device 65 and the light-receiving unit 11, or the distance from a reference point (reference point), to the object being measured 13. Furthermore, the reference point refers to a point set at a predetermined position from the light-emitting device 65 and the light-receiving unit 11.

[0287] This method is based on the measurement of the time of arrival of light and is known as the Time-of-Flight (TOF) method.

[0288] If this method is performed on multiple points on the object to be measured 13, the three-dimensional shape of the object to be measured 13 is measured. As described above, emitted light from the light-emitting device 65 illuminates the object to be measured 13. Then, reflected light from the portion of the object to be measured 13 that is closer to the light-emitting device 65 rapidly enters the light-receiving part 11. When using an imaging device that obtains the two-dimensional image described above, bright spots are recorded in the frame image at the portions where the reflected light reaches. Based on the bright spots recorded in a series of multiple frame images, the optical path length is calculated for each bright spot. Then, the distance from the light-emitting device 65, the light-receiving part 11, or the distance from a reference point (reference point) is calculated. That is, the three-dimensional shape of the object to be measured 13 is calculated.

[0289] The optical measuring device 1 described above can be used to calculate the distance to an object. Furthermore, it can calculate the shape of an object for object recognition. It can also calculate the shape of a person's face for recognition (facial authentication). Moreover, by being mounted on a vehicle, it can be used to detect obstacles in front, behind, and to the sides. Thus, the optical measuring device 1 can be widely used for calculating distances or shapes.

[0290] [Image forming apparatus 2]

[0291] The aforementioned light-emitting device 65 can be used for image formation.

[0292] Figure 14 This is a diagram illustrating the image forming apparatus 2 using the light-emitting device 65.

[0293] The image forming apparatus 2 includes the light-emitting device 65, the drive control unit 21, and the screen 22 for receiving light, as described above.

[0294] The operation of the image forming apparatus 2 will be explained.

[0295] As described above, the light-emitting device 65 sets the surface-emitting laser element (VCSEL) to be on / off. Furthermore, as shown by the solid line, the illumination direction of the light is moved vertically around the light-emitting device 65, and the light is emitted in a straight line in the horizontal direction. That is, the light scans and illuminates the screen 22. This results in a two-dimensional still image (two-dimensional image). Then, in order to receive an image signal input and form a two-dimensional image, the drive control unit 21, which drives the light-emitting device 65 according to the image signal, rewrites the on-time maintenance period as frames sequentially, thereby obtaining a dynamic image of the two-dimensional image. These two-dimensional still images or dynamic images are projected onto the screen 22.

[0296] The embodiments described above are for illustrative purposes only; however, the scope of this disclosure is not limited to the scope described in the above embodiments. As can be clearly understood from the claims, embodiments that incorporate various modifications or improvements to the above embodiments are also included within the scope of this disclosure.

Claims

1. A light-emitting component, comprising: substrate; Multiple light-emitting elements are disposed on the substrate and emit light in a direction intersecting the surface of the substrate; and A gate electrode is electrically connected to each of the plurality of light-emitting elements, and is controlled to simultaneously turn the plurality of light-emitting elements on and off. The light-emitting element forms a layer structure comprising: a thyristor and a light-emitting layer disposed between the layers constituting the thyristor for emitting light. The light-emitting component also includes a plurality of holes disposed around each of the plurality of light-emitting elements of the thyristor. The gate layer and the top layer of the thyristor are connected as a common layer between the multiple light-emitting elements via a plurality of vias. The thyristor has a current-restricting layer that is oxidized through the aperture, thereby narrowing the current flowing through the light-emitting layer. The distance between each of the light-emitting elements and the gate electrode is smaller than the distance between the farthest of the light-emitting elements.

2. The light-emitting component according to claim 1, wherein, The gate electrode is connected as a common layer in the area outside the light-emitting element.

3. The light-emitting component according to claim 2, wherein, The gate electrode covers the area outside the periphery of the light-emitting element.

4. The light-emitting component according to claim 2, wherein, The gate electrodes are connected as a common layer by forming a branch structure.

5. The light-emitting component according to claim 1, wherein, The upper p-type layer and upper n-type layer of the thyristor are separated among the plurality of light-emitting elements, and the lower gate layer of the thyristor is connected as a common layer among the plurality of light-emitting elements and functions as a gate layer.

6. The light-emitting component according to claim 5, wherein, A portion of the upper side of the lower gate layer is further segmented among the plurality of light-emitting elements.

7. The light-emitting component according to claim 6, wherein, A portion of the slit p-layer of the thyristor has a current-stenciling layer that narrows the current flowing through the light-emitting layer.

8. A light-emitting element array chip, comprising: A column of light-emitting components, wherein the light-emitting components according to any one of claims 1 to 7 are arranged in a column in the main scanning direction; and A driving unit is used to input and output signals that drive the light-emitting component.

9. An optical measuring device comprising: The light-emitting component according to any one of claims 1 to 7; A light-receiving part that receives reflected light from an object that has been illuminated by the light-emitting component; and The processing unit processes information related to the light received by the light-receiving unit and measures the distance from the light-emitting component to the object or the shape of the object.

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